CN103972373A - LED (light emitting diode) metal lead frame and manufacturing method thereof - Google Patents

LED (light emitting diode) metal lead frame and manufacturing method thereof Download PDF

Info

Publication number
CN103972373A
CN103972373A CN201310044640.8A CN201310044640A CN103972373A CN 103972373 A CN103972373 A CN 103972373A CN 201310044640 A CN201310044640 A CN 201310044640A CN 103972373 A CN103972373 A CN 103972373A
Authority
CN
China
Prior art keywords
metal lead
lead wire
wire frame
led
silver layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310044640.8A
Other languages
Chinese (zh)
Other versions
CN103972373B (en
Inventor
夏勋力
李程
唐永成
吴廷
麦家儿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Foshan NationStar Optoelectronics Co Ltd
Original Assignee
Foshan NationStar Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foshan NationStar Optoelectronics Co Ltd filed Critical Foshan NationStar Optoelectronics Co Ltd
Priority to CN201310044640.8A priority Critical patent/CN103972373B/en
Publication of CN103972373A publication Critical patent/CN103972373A/en
Application granted granted Critical
Publication of CN103972373B publication Critical patent/CN103972373B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

The invention relates to an LED (light emitting diode) metal lead frame and a manufacturing method thereof. The manufacturing method of the LED metal lead frame includes: step S10, corroding a metal band to form a metal lead frame; step S20, roughening the metal lead frame, wherein the step S10 particularly includes: flattening the metal band, covering a corrosion-resistant layer or a corrosion-resistant mould on each of the front surface and the rear surface of the metal band, etching the metal band except for the corrosion-resistant layers or the corrosion-resistant moulds to form the metal lead frame; the step S20 particularly includes: keeping the corrosion-resistant layers or the corrosion-resistant moulds unmoved, and roughening the lateral side of the metal lead frame. Using the manufacturing method can achieve the effect that the lateral side is roughened while the front surface and the rear surface are kept flat and smooth, air tightness of an LED device based on the frame can be greatly improved, and accordingly reliability of the LED device is improved, and service life of the device is prolonged.

Description

A kind of LED metal lead wire frame and manufacture method thereof
Technical field
The present invention relates to a kind of LED metal lead wire frame and manufacture method thereof, relate in particular to a kind of LED metal lead wire frame and manufacture method thereof with side alligatoring.
Background technology
EMC(Epoxy Molding Compound for existing LED) support, by metal lead wire frame and thermosets, formed, because metal lead wire frame surface is level and smooth, thermosets and metal lead wire frame in conjunction with time, the air-tightness of both contact positions is not high, in the techniques such as follow-up deflashing, mistake reflow ovens, lead frame is easier to occur lamination with thermosets ratio, the reliability of the easy like this LED device that causes applying EMC support is not high, thereby affects the useful life of LED device.
Solve the low problem of air-tightness, generally by alligatoring is carried out in metal lead wire frame surface, to increase the conjugation of thermosets and metal lead wire frame, and then the air-tightness of raising LED device.Therefore, prior art is processed by LED metal lead wire frame is done to surface coarsening, increases the conjugation of thermosets and metal lead wire frame.But, at present LED metal lead wire frame is done to front and rear surfaces and the side alligatoring simultaneously that surface coarsening processing method can make metal lead wire frame, higher side alligatoring can improve the air-tightness of lead frame, but produced simultaneously front and rear surfaces alligatoring meeting affects the light extraction efficiency of LED device.And after metal lead wire frame alligatoring, front and rear surfaces out-of-flatness, there is space, easily follow-up by the plastic package process of thermosets and metal lead wire frame combination, cause thermosets to overflow from the space of metal front and rear surfaces, cause the generation of serious flash phenomenon, cover the positions such as chip installation portion, greatly reduce the reliability of EMC rack making.
In order to address the above problem, the present invention proposes a kind ofly to avoid front and rear surfaces to be roughened and the manufacture method of the LED metal lead wire frame of side alligatoring only, makes metal lead wire frame after technique of the present invention, and only the side at metal lead wire frame has alligatoring effect.
Summary of the invention
The object of the invention is to overcome shortcoming of the prior art with not enough, provide a kind of and avoid front and rear surfaces to be roughened and the manufacture method of the LED metal lead wire frame of side alligatoring only.
The present invention adopts following technical scheme to realize: a kind of manufacture method of LED metal lead wire frame, comprises the steps:
Step S10: metal tape is corroded, form metal lead wire frame;
Step S20: metal lead wire frame is carried out to roughening treatment;
Wherein said step S10 comprises step: Yangjing metal tape, and in metal tape front and rear surfaces, cover a lumarith or cover a corrosion protection mould, then the metal tape beyond described lumarith or corrosion protection mould is carried out to etching, form metal lead wire frame; Described step S20 comprises step: do not remove described lumarith or corrosion protection mould, roughening treatment is carried out in the side of described metal lead wire frame.
By above-mentioned steps, the front-back of metal lead wire frame is covered to avoid being roughened by lumarith or corrosion protection mould, thereby has realized side alligatoring and the smooth smooth effect of front-back maintenance.
Further, also comprise step S30: this metal lead wire frame is carried out to electrosilvering processing.This step is to facilitate follow-up kind Wiring technology, is conducive to the bright dipping of device simultaneously.
Further, first this step S30 is specially this metal lead wire frame is electroplated to one first silver layer, and then at electroplating surface one second silver layer of this first silver layer, the thickness of this second silver layer is greater than this first silver layer.This first silver layer forms one deck resilient coating, plays barrier function, can effectively prevent that the metallic atom of metal framework is diffused into the second silver layer surface because being heated.
In addition, the present invention also provides a kind of LED metal lead wire frame of manufacturing according to above-mentioned manufacture method, its side forms micro-alligatoring structure of peak valley shape, micro-alligatoring structure of described peak valley shape be two peak-to-peak maximum spacing values within the scope of 5-20 μ m, two peak-to-peak average headway values are within the scope of 1-5 μ m.
With respect to prior art, the side of the metal lead wire frame that the manufacture method of LED metal lead wire frame of the present invention obtains has alligatoring effect, and its front and rear surfaces maintenance is smooth smooth.
In order to understand more clearly the present invention, below with reference to accompanying drawing explanation, set forth the specific embodiment of the present invention.
Accompanying drawing explanation
Fig. 1 is the manufacturing structure schematic flow sheet of metal lead wire frame of the present invention
Fig. 2 is the side roughening treatment manufacturing structure schematic flow sheet of metal lead wire frame.
Fig. 3 is the enlarged drawing of the a-quadrant after the side alligatoring of metal lead wire frame shown in Fig. 2.
Embodiment
embodiment 1
The manufacture method of LED metal lead wire frame of the present invention comprises the steps:
Step S10: metal tape is corroded, form metal lead wire frame 11.In the present embodiment, this metal tape is copper strips.Refer to Fig. 1, it is the manufacturing structure schematic diagram of metal lead wire frame of the present invention.This step S10 specifically comprises the steps:
Step S11: Yangjing copper strips 1, carries out early stage to copper strips and processes.Specifically comprise that degrease, cleaning etc. process in earlier stage.
Step S12: the front and rear surfaces at copper strips covers respectively one deck lumarith 2.This lumarith 2 covers does not need the region that is corroded on described copper strips, the pattern of this lumarith 2 is consistent with the pattern of pre-designed metal lead wire frame drawing.
Step S13: etching, with the copper strips 1 of lumarith 2, forms metal lead wire frame.Particularly; copper strips 1 is put into corrosive liquid and carry out etching; the region covering at lumarith 2 is the corrosion that is not corroded due to the protective effect of lumarith 2, thereby after this copper strips 1 corrode in corrosive liquid, obtains the metal lead wire frame 11 that consists of a plurality of carrier units.What in the present embodiment, corrosive liquid adopted is ferric chloride solution.
Step S20: the side to the metal lead wire frame 11 being obtained by step S10 carries out roughening treatment.Refer to Fig. 2, it is the side roughening treatment manufacturing structure schematic flow sheet of metal lead wire frame of the present invention.This step S20 specifically comprises the steps:
Step S21: etching is with the side of the metal lead wire frame 11 of lumarith 2.Particularly, the metal lead wire frame with lumarith 2 11 is put into micro-etching agent, because the front and rear surfaces of metal lead wire frame 11 has the protection of lumarith 2, micro-etching agent can only corrode the side of the metal lead wire frame 11 beyond lumarith 2.In the present embodiment, this micro-etching agent is the mixed solution of the components such as sulfuric acid, hydrogen peroxide.This metal lead wire frame 11 etching time in micro-etching agent is about 30s, forms micro-alligatoring effect of peak valley shape at the side of metal lead wire frame 11, and as shown in Figure 3, it is the enlarged drawing of the a-quadrant after the side alligatoring of metal lead wire frame 11.Micro-alligatoring effect of this peak valley shape is specifically: the maximum spacing value between two peaks (or two paddy) is within the scope of 5-20 μ m, and the average headway value between two peaks (or two paddy) is within the scope of 1-5 μ m.
Step S22: remove lumarith 2.In the present embodiment, by alkaline solution, described lumarith is removed.
Step S23: to metal lead wire frame 11 clean, air-dry, thereby complete the side roughening treatment of metal lead wire frame 11.
Step S30: metal lead wire frame 11 is carried out to electrosilvering processing.It specifically comprises the steps:
Step S31: metal lead wire frame 11 is put into alkaline solution and clean, to remove its surperficial oil reservoir.In the present embodiment, this step repeats twice, to remove the impurity on metal lead wire frame 11 surfaces.
Step S32: metal lead wire frame 11 is put into acid solution and clean, to remove its surperficial oxide layer.In the present embodiment, metal lead wire frame 11 being put into weakly acidic solution cleans.
Step S33: metal lead wire frame 11 is put into activator solution and soak activation processing, so that it in follow-up electroplating technology, makes electrodeposited coating and the easier combination of this metal lead wire frame 11.
Step S34: electroplate a thin copper layer in the front and rear surfaces of metal lead wire frame 11.This thin copper layer is a transition zone, and it is more easily combined this metal lead wire frame 11 with follow-up electrodeposited coating.
Step S35: at thin copper layer electroplating surface the first silver layer.The thickness of this first silver layer is between 1 ~ 1.5 μ m.Particularly, in the present embodiment, the density of controlling electroplating current in electroplating process is 0.2-0.5A/dm 2, the temperature of plating solution is 40 ~ 80 ℃, preferably the density of electroplating current is 0.3A/dm 2, plating solution temperature be 50 ℃, thereby obtain the silver layer that a layer thickness is 1 ~ 1.5 μ m.The object of plating this first silver layer is in order to form one deck resilient coating, to play barrier function, effectively prevents that copper is diffused into silver layer surface because being heated.In this step, electroplating current can not be excessive, otherwise the thickness of the first silver layer can be blocked up, can not reach above-mentioned effect.
Step S36: at electroplating surface second silver layer of the first silver layer.The thickness of this second silver layer is greater than the thickness of the first silver layer, and its thickness is between 1.5 ~ 2 μ m.Particularly, in the present embodiment, the density of controlling electroplating current in electroplating process is 0.5-2A/dm 2, the temperature of plating solution is 40-80 ℃, preferably the density of electroplating current is 0.7A/dm 2, plating solution temperature be 50 ℃, thereby obtain the silver layer that a layer thickness is 1.5 ~ 2 μ m.This second silver layer can improve the reflectivity of silver coating, makes device light extraction efficiency higher.
With respect to prior art, the manufacture method of LED metal lead wire frame of the present invention is when carrying out alligatoring to the side of metal lead wire frame, the front and rear surfaces of metal lead wire frame is covered to avoid being roughened by lumarith, thereby has realized side alligatoring and the smooth smooth effect of front and rear surfaces maintenance.Further, in order to facilitate follow-up kind Wiring technology, be conducive to the bright dipping of device simultaneously, need carry out electroplating processes to metal lead wire frame.The present invention adopts and first plates one first silver layer, then the mode of plating one second silver layer.This first silver layer plays the effect of buffer stop layer, effectively prevents that copper is diffused into the second silver layer surface because being heated.This second silver layer improves the reflectivity of silver coating, makes device light extraction efficiency higher.
The metal lead wire frame that manufacture method by LED metal lead wire frame of the present invention obtains comprises the side that is roughened and smooth front and rear surfaces.Wherein, after this side alligatoring, there is peak valley shape structure, micro-alligatoring effect of this peak valley shape specifically: the maximum spacing value between two peaks (or two paddy) is within the scope of 5-20 μ m, and the average headway value between two peaks (or two paddy) is within the scope of 1-5 μ m.The front and rear surfaces of this metal lead wire frame is coated with the first silver layer, and this first silver layer surface covers the second silver layer.The thickness of this first silver layer is less than the thickness of this second silver layer.In the present embodiment, the thickness of this first silver layer is 1 ~ 1.5 μ m, and the thickness of this second silver layer is 1.5 ~ 2 μ m.Further, between the front and rear surfaces of this metal lead wire frame and the first silver layer, a thin copper layer can also be set as transition zone.
With respect to prior art, the metal lead wire frame that manufacture method of the present invention obtains has side alligatoring and the smooth smooth effect of front and rear surfaces maintenance.Its first silver layer plays the effect of buffer stop layer, effectively prevents that copper is diffused into the second silver layer surface because being heated.This second silver layer improves the reflectivity of silver coating, makes device light extraction efficiency higher.The metal lead wire frame of manufacture of the present invention is applied to EMC(Epoxy Molding Compound for LED) support, side and the thermosets by lead frame with alligatoring effect can be combined closely, this EMC stent applications is in LED device, can make the air-tightness of device greatly improve, and then the reliability of raising LED device, the useful life of prolongation device.
embodiment 2
The method of the embodiment of the present invention 2 and embodiment 1 are roughly the same, and its difference is only: the front and rear surfaces that adopts corrosion protection mould to compress metal lead wire frame is carried out the lumarith in alternate embodiment 1.Particularly, comprise the steps:
Step S10: metal tape is corroded, form metal lead wire frame.In the present embodiment, this metal tape is copper strips.This step S10 specifically comprises the steps:
Step S11: Yangjing copper strips, carries out early stage to copper strips and processes.Specifically comprise that degrease, cleaning etc. process in earlier stage.
Step S12: copper strips is put into mould, mold compresses is covered and do not need the region that is corroded on described copper strips, exposing copper strips needs etched position.The pattern of this mould is consistent with the pattern of pre-designed metal lead wire frame drawing.
Step S13: etching, with the copper strips of mould, forms metal lead wire frame.Particularly, copper strips is put into corrosive liquid and carry out etching, the region covering at the mould corrosion that is not corroded due to the protective effect of mould, thus after corrode in corrosive liquid, this copper strips obtains the metal lead wire frame that formed by a plurality of carrier units.What in the present embodiment, corrosive liquid adopted is ferric chloride solution.
Step S20: the side of the metal lead wire frame being obtained by step S10 is carried out to roughening treatment.This step S20 specifically comprises the steps:
Step S21: etching is with the side of the metal lead wire frame of mould.
Step S22: remove mould.
Step S23: to metal lead wire frame clean, air-dry, thereby complete the side roughening treatment of metal lead wire frame.
The present embodiment step S30 is consistent with the step of embodiment 1, does not repeat them here.
Further, the structure of metal lead wire frame that the present embodiment obtains is identical with the die-attach area shelf structure of embodiment 1, does not repeat them here.
The present invention is not limited to above-mentioned execution mode, if various changes of the present invention or distortion are not departed to the spirit and scope of the present invention, within if these changes and distortion belong to claim of the present invention and equivalent technologies scope, the present invention is also intended to comprise these changes and distortion.

Claims (10)

1. a manufacture method for LED metal lead wire frame, comprises the steps:
Step S10: metal tape is corroded, form metal lead wire frame;
Step S20: metal lead wire frame is carried out to roughening treatment;
It is characterized in that: described step S10 comprises step: Yangjing metal tape, in metal tape front and rear surfaces, cover a lumarith or cover a corrosion protection mould, then the metal tape beyond described lumarith or corrosion protection mould is carried out to etching, form metal lead wire frame; Described step S20 comprises step: do not remove described lumarith or corrosion protection mould, roughening treatment is carried out in the side of described metal lead wire frame.
2. the manufacture method of LED metal lead wire frame according to claim 1, is characterized in that: also comprise step S30: this metal lead wire frame is carried out to electrosilvering processing.
3. the manufacture method of LED metal lead wire frame according to claim 2, it is characterized in that: this step S30 comprises step: first this metal lead wire frame is electroplated to one first silver layer, and then at electroplating surface one second silver layer of this first silver layer, the thickness of this second silver layer is greater than this first silver layer.
4. the manufacture method of LED metal lead wire frame according to claim 3, is characterized in that: the density of electroplating the electroplating current of the first silver layer in this step S30 is 0.2-0.5A/dm 2, the temperature of plating solution is 40-80 ℃; Or/and electroplate the density of the electroplating current of the second silver layer in this step S30, be 0.5-2A/dm 2, the temperature of plating solution is 40-80 ℃.
5. the manufacture method of LED metal lead wire frame according to claim 3, is characterized in that: the thickness of this first silver layer is between 1 ~ 1.5 μ m.
6. the manufacture method of LED metal lead wire frame according to claim 3, is characterized in that: the thickness of this second silver layer is between 1.5 ~ 2 μ m.
7. the manufacture method of LED metal lead wire frame according to claim 1, is characterized in that: in this step S10, adopt this metal tape of corrosive liquid etching to form metal lead wire frame; In this step S20, by putting into micro-etching agent with the metal lead wire frame of described lumarith or corrosion protection mould, carry out roughening treatment.
8. the manufacture method of LED metal lead wire frame according to claim 7, is characterized in that: the material of this metal tape is copper, and in this step S10, the corrosive liquid of etching metal band is ferric chloride solution.
9. the manufacture method of LED metal lead wire frame according to claim 7, is characterized in that: the micro-etching agent in this step S20 comprises sulfuric acid and hydrogen peroxide component.
10. according to the LED metal lead wire frame of arbitrary described manufacture method manufacture in claim 1-9, it is characterized in that: described metal lead wire frame side forms micro-alligatoring structure of peak valley shape, micro-alligatoring structure of described peak valley shape be two peak-to-peak maximum spacing values within the scope of 5-20 μ m, two peak-to-peak average headway values are within the scope of 1-5 μ m.
CN201310044640.8A 2013-02-04 2013-02-04 A kind of LED metal lead wire frames and its manufacture method Active CN103972373B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310044640.8A CN103972373B (en) 2013-02-04 2013-02-04 A kind of LED metal lead wire frames and its manufacture method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310044640.8A CN103972373B (en) 2013-02-04 2013-02-04 A kind of LED metal lead wire frames and its manufacture method

Publications (2)

Publication Number Publication Date
CN103972373A true CN103972373A (en) 2014-08-06
CN103972373B CN103972373B (en) 2017-08-18

Family

ID=51241650

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310044640.8A Active CN103972373B (en) 2013-02-04 2013-02-04 A kind of LED metal lead wire frames and its manufacture method

Country Status (1)

Country Link
CN (1) CN103972373B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105679736A (en) * 2014-12-05 2016-06-15 友立材料株式会社 Lead frame and manufacturing method thereof
CN108730928A (en) * 2018-07-16 2018-11-02 安徽芯瑞达科技股份有限公司 A kind of LED support and its manufacturing method
CN109817785A (en) * 2018-12-25 2019-05-28 广东晶科电子股份有限公司 A kind of light emitting diode and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101064993A (en) * 2006-04-27 2007-10-31 三洋电机株式会社 Circuit apparatus
JP2008187045A (en) * 2007-01-30 2008-08-14 Matsushita Electric Ind Co Ltd Lead frame for semiconductor device, manufacturing method therefor, and the semiconductor device
CN201265836Y (en) * 2008-08-08 2009-07-01 湖北匡通电子有限公司 LED lead frame with novel coating
CN102142504A (en) * 2010-01-29 2011-08-03 株式会社东芝 LED package, method for manufacturing LED package, and packing member for LED package
JP2012089638A (en) * 2010-10-19 2012-05-10 Kobe Steel Ltd Lead frame for led

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101064993A (en) * 2006-04-27 2007-10-31 三洋电机株式会社 Circuit apparatus
JP2008187045A (en) * 2007-01-30 2008-08-14 Matsushita Electric Ind Co Ltd Lead frame for semiconductor device, manufacturing method therefor, and the semiconductor device
CN201265836Y (en) * 2008-08-08 2009-07-01 湖北匡通电子有限公司 LED lead frame with novel coating
CN102142504A (en) * 2010-01-29 2011-08-03 株式会社东芝 LED package, method for manufacturing LED package, and packing member for LED package
JP2012089638A (en) * 2010-10-19 2012-05-10 Kobe Steel Ltd Lead frame for led

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105679736A (en) * 2014-12-05 2016-06-15 友立材料株式会社 Lead frame and manufacturing method thereof
CN108730928A (en) * 2018-07-16 2018-11-02 安徽芯瑞达科技股份有限公司 A kind of LED support and its manufacturing method
CN108730928B (en) * 2018-07-16 2024-03-26 安徽芯瑞达科技股份有限公司 LED bracket and manufacturing method thereof
CN109817785A (en) * 2018-12-25 2019-05-28 广东晶科电子股份有限公司 A kind of light emitting diode and preparation method thereof

Also Published As

Publication number Publication date
CN103972373B (en) 2017-08-18

Similar Documents

Publication Publication Date Title
CN101849447B (en) Circuit board and method for manufacturing the same
JP6493952B2 (en) Lead frame and manufacturing method thereof
JP2010199166A (en) Lead frame for optical semiconductor apparatus, and method of manufacturing the same
TW200721927A (en) Method for making a circuit board, and circuit board
JP6362111B2 (en) Lead frame manufacturing method
CN103972373A (en) LED (light emitting diode) metal lead frame and manufacturing method thereof
CN102438412B (en) Back drilling method of PCB (Printed Circuit Board)
CN105376958B (en) The surface treatment method of wiring board
JP6044936B2 (en) Manufacturing method of semiconductor device mounting substrate
US8253032B2 (en) Printed circuit board strip and panel
KR101166350B1 (en) Lds plastic material and fabricating method the same
JP2010062517A (en) Nickel-gold plating method and printed circuit board
US20240162168A1 (en) Semiconductor device having cavities at an interface of an encapsulant and a die pad or leads
CN109327967A (en) A kind of resin plate buries the production technology of copper billet
JP6233973B2 (en) Metal-ceramic circuit board manufacturing method
JP2014078658A (en) Substrate for semiconductor package and manufacturing method of the same
JP2011198977A (en) Manufacturing method of semiconductor device
CN105489504B (en) A kind of production method of package substrate
JP5766318B2 (en) Lead frame
CN105386100A (en) Method for electroplating copper and sliver on iron-nickel alloy frame
CN102055099A (en) Electric connector terminal and electroplating method thereof
JP6856342B2 (en) Copper or copper alloy plate material and its manufacturing method, and terminals
TWI496226B (en) Printed circuit board structure and method for protecting metal pad from being scraped
JP5846655B2 (en) Manufacturing method of semiconductor device
KR101453423B1 (en) Method of manufacturing of metal plated layer on the flexible printed circuit board

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant