CN103964373B - 具有抗裂膜结构的微机电系统器件及其制造方法 - Google Patents
具有抗裂膜结构的微机电系统器件及其制造方法 Download PDFInfo
- Publication number
- CN103964373B CN103964373B CN201410032683.9A CN201410032683A CN103964373B CN 103964373 B CN103964373 B CN 103964373B CN 201410032683 A CN201410032683 A CN 201410032683A CN 103964373 B CN103964373 B CN 103964373B
- Authority
- CN
- China
- Prior art keywords
- layer
- base membrane
- sacrificial body
- polysilicon
- mems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000012528 membrane Substances 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 238000005336 cracking Methods 0.000 title abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 64
- 229920005591 polysilicon Polymers 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 241001232787 Epiphragma Species 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 201
- 238000000151 deposition Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000002365 multiple layer Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims 2
- 210000004379 membrane Anatomy 0.000 description 76
- 239000010408 film Substances 0.000 description 63
- 230000008859 change Effects 0.000 description 17
- 208000037656 Respiratory Sounds Diseases 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000001788 irregular Effects 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 210000002469 basement membrane Anatomy 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 235000013339 cereals Nutrition 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012812 sealant material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
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- 238000005538 encapsulation Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
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- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Micromachines (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/753,034 | 2013-01-29 | ||
| US13/753,034 US8921952B2 (en) | 2013-01-29 | 2013-01-29 | Microelectromechanical system devices having crack resistant membrane structures and methods for the fabrication thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103964373A CN103964373A (zh) | 2014-08-06 |
| CN103964373B true CN103964373B (zh) | 2017-06-09 |
Family
ID=51222004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410032683.9A Expired - Fee Related CN103964373B (zh) | 2013-01-29 | 2014-01-24 | 具有抗裂膜结构的微机电系统器件及其制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8921952B2 (https=) |
| JP (1) | JP6440290B2 (https=) |
| CN (1) | CN103964373B (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9102514B2 (en) * | 2013-03-22 | 2015-08-11 | Freescale Semiconductor, Inc | Inhibiting propagation of surface cracks in a MEMS Device |
| US9618561B2 (en) * | 2014-03-05 | 2017-04-11 | Infineon Technologies Ag | Semiconductor device and method for detecting damaging of a semiconductor device |
| JP2015174150A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | Ｍｅｍｓデバイスおよびその製造方法 |
| JP6433349B2 (ja) * | 2015-03-19 | 2018-12-05 | 三菱電機株式会社 | 半導体圧力センサおよびその製造方法 |
| US9517927B2 (en) * | 2015-04-29 | 2016-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | MEMS structure having rounded edge stopper and method of fabricating the same |
| WO2017200621A2 (en) * | 2016-02-29 | 2017-11-23 | The Regents Of The University Of Michigan | Assembly processes for three-dimensional microstructures |
| ITUA20162174A1 (it) * | 2016-03-31 | 2017-10-01 | St Microelectronics Srl | Procedimento di fabbricazione di un sensore di pressione mems e relativo sensore di pressione mems |
| US11008214B2 (en) | 2016-07-22 | 2021-05-18 | Hewlett-Packard Development Company, L.P. | Substrate assembly and related methods |
| US10322928B2 (en) * | 2016-11-29 | 2019-06-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-layer sealing film for high seal yield |
| DE102017102545B4 (de) * | 2017-02-09 | 2018-12-20 | Infineon Technologies Ag | Halbleitervorrichtung, Drucksensor, Mikrofon, Beschleunigungssensor und Verfahren zum Bilden einer Halbleitervorrichtung |
| EP3650827B1 (en) * | 2018-11-07 | 2022-08-31 | Sciosense B.V. | Method of manufacturing a semiconductor transducer device with multilayer diaphragm and semiconductor transducer device with multilayer diaphragm |
| EP3654005B1 (en) * | 2018-11-15 | 2022-05-11 | TE Connectivity Solutions GmbH | Differential pressure sensor device |
| CN109734047B (zh) * | 2019-02-27 | 2021-03-23 | 京东方科技集团股份有限公司 | 一种mems器件及其制作方法、显示基板 |
| DE102020213772A1 (de) * | 2020-11-03 | 2022-05-05 | Robert Bosch Gesellschaft mit beschränkter Haftung | Mikromechanisches Bauelement |
| CN115356017B (zh) * | 2022-08-30 | 2026-01-23 | 北京京东方技术开发有限公司 | 压力传感器及其制作方法、显示设备 |
| CN115403004B (zh) * | 2022-09-28 | 2024-09-10 | 武汉高芯科技有限公司 | 一种红外探测器及其制备方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6012336A (en) * | 1995-09-06 | 2000-01-11 | Sandia Corporation | Capacitance pressure sensor |
| US6541833B2 (en) * | 1998-08-27 | 2003-04-01 | Infineon Technologies Ag | Micromechanical component with sealed membrane openings and method of fabricating a micromechanical component |
| CN101405215A (zh) * | 2006-05-18 | 2009-04-08 | 株式会社半导体能源研究所 | 微结构、微机械、以及微结构和微机械的制造方法 |
| CN101742389A (zh) * | 2008-11-12 | 2010-06-16 | 台湾积体电路制造股份有限公司 | 集成电路结构及其形成方法 |
| CN101832831A (zh) * | 2010-04-22 | 2010-09-15 | 无锡市纳微电子有限公司 | 一种压阻传感器芯片及其制作方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4742020A (en) | 1985-02-01 | 1988-05-03 | American Telephone And Telegraph Company, At&T Bell Laboratories | Multilayering process for stress accommodation in deposited polysilicon |
| AU4866496A (en) * | 1995-02-24 | 1996-09-18 | Intel Corporation | Polysilicon polish for patterning improvement |
| US6204143B1 (en) | 1999-04-15 | 2001-03-20 | Micron Technology Inc. | Method of forming high aspect ratio structures for semiconductor devices |
| US7956428B2 (en) * | 2005-08-16 | 2011-06-07 | Robert Bosch Gmbh | Microelectromechanical devices and fabrication methods |
| US7838321B2 (en) * | 2005-12-20 | 2010-11-23 | Xerox Corporation | Multiple stage MEMS release for isolation of similar materials |
| US7919006B2 (en) * | 2007-10-31 | 2011-04-05 | Freescale Semiconductor, Inc. | Method of anti-stiction dimple formation under MEMS |
-
2013
- 2013-01-29 US US13/753,034 patent/US8921952B2/en not_active Expired - Fee Related
-
2014
- 2014-01-24 CN CN201410032683.9A patent/CN103964373B/zh not_active Expired - Fee Related
- 2014-01-28 JP JP2014013418A patent/JP6440290B2/ja not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6012336A (en) * | 1995-09-06 | 2000-01-11 | Sandia Corporation | Capacitance pressure sensor |
| US6541833B2 (en) * | 1998-08-27 | 2003-04-01 | Infineon Technologies Ag | Micromechanical component with sealed membrane openings and method of fabricating a micromechanical component |
| CN101405215A (zh) * | 2006-05-18 | 2009-04-08 | 株式会社半导体能源研究所 | 微结构、微机械、以及微结构和微机械的制造方法 |
| CN101742389A (zh) * | 2008-11-12 | 2010-06-16 | 台湾积体电路制造股份有限公司 | 集成电路结构及其形成方法 |
| CN101832831A (zh) * | 2010-04-22 | 2010-09-15 | 无锡市纳微电子有限公司 | 一种压阻传感器芯片及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8921952B2 (en) | 2014-12-30 |
| US20140210018A1 (en) | 2014-07-31 |
| JP2014146802A (ja) | 2014-08-14 |
| CN103964373A (zh) | 2014-08-06 |
| JP6440290B2 (ja) | 2018-12-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Texas in the United States Patentee after: NXP USA, Inc. Address before: Texas in the United States Patentee before: FREESCALE SEMICONDUCTOR, Inc. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170609 Termination date: 20220124 |