CN103943758A - Efficient heat-dissipation high-power LED (light-emitting diode) bulb - Google Patents
Efficient heat-dissipation high-power LED (light-emitting diode) bulb Download PDFInfo
- Publication number
- CN103943758A CN103943758A CN201410199168.XA CN201410199168A CN103943758A CN 103943758 A CN103943758 A CN 103943758A CN 201410199168 A CN201410199168 A CN 201410199168A CN 103943758 A CN103943758 A CN 103943758A
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- Prior art keywords
- heat
- power led
- bulb
- led
- light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0133—Ternary Alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
The invention discloses an efficient heat-dissipation high-power LED (light-emitting diode) bulb which comprises eutectic materials, an LED chip, a metal heat conducting substrate, heat conducting pins, high polymer material insulators, gold wires, fluorescent powder and resin colloid. The efficient heat-dissipation high-power LED bulb is characterized in that the WD-01 type eutectic materials are novel tin, magnesium and strontium alloy materials with low heat resistance and fine heat conductance performance, and the heat conductivity of the WD-01 type eutectic materials is as high as 265W/mk. As the WD-01 type eutectic materials are low in heat resistance, heat generated by the LED chip can be rapidly dissipated, the LED bulb packaged by the technology solves the heat-dissipation problem of a high-power LED bulb, working reliability and light-emitting efficiency of the LED bulb are improved, lamp external cooling devices are decreased, and the cost of an LED lamp is reduced. The efficient heat-dissipation high-power LED bulb is suitable for application to high-power LED lighting occasions.
Description
Technical field
A large-power LED light bead for high efficiency and heat radiation, relates to a kind of high-power LED encapsulation technology, specifically a kind of LED lamp pearl of introducing the encapsulation of WD-01 type eutectic material technology.
Background technology
The main die bond mode of China LED lamp pearl is to use elargol to be fixed LED chip at present, and elargol thermal conductivity is low, and the heat localization that elargol die bond technique forms causes LED chip joint temperature to rise, and light extraction efficiency reduces, reliability decrease.And along with social development, more and more to the demand of energy saving and environment friendly lighting, lighting power, brightness requirement are larger, the LED lamp pearl of traditional elargol die bond explained hereafter cannot satisfy the demands aspect heat radiation, light efficiency.
Summary of the invention
The present invention is directed to the weak point existing in above-mentioned prior art, the LED lamp pearl of a kind of high integration, high-power, low thermal resistance is provided, solve LED chip heat build-up in the time of work, reduce luminous element light decay, obtain better thermal diffusivity, higher light efficiency, the useful life of raising LED, reduction application cost.Structural scheme is as follows:
A large-power LED light bead for high efficiency and heat radiation, its form structure there is no special feature, and it comprises LED chip, eutectic material, metal heat-conducting substrate, conductive pin, macromolecular material insulator, fluorescent material, resin colloid.It is characterized in that, described eutectic material is WD-01 type eutectic material, is a kind of tin, magnesium, strontium metal alloy, and thermal conductivity is up to 265W/mk.
Beneficial effect of the present invention:
Owing to having used WD-01 type eutectic material technology packaged LED lamp pearl, solve the problem that caloric value is large, luminous efficiency is low that common LED lamp pearl exists; Realize the little encapsulation of single LED lamp pearl, high integrated, high-power.Higher than traditional elargol explained hereafter efficiency, reduce lamp pearl cost.
Brief description of the drawings
Fig. 1 is a kind of large-power LED light bead structural representation of high efficiency and heat radiation.
In figure: 1, conductive pin; 2, macromolecule insulator; 3, metal heat-conducting substrate; 4, gold thread; 5, WD-01 eutectic material; 6, LED chip; 7, fluorescent material; 8, resin colloid.
Embodiment
Referring to Fig. 1, a kind of large-power LED light bead of high efficiency and heat radiation, comprises conductive pin 1, macromolecular material insulator 2, metal heat-conducting substrate 3, gold thread 4, WD-01 type eutectic material 5, LED chip 6, fluorescent material 7, resin colloid 8.
Conductive pin 1 is connected with the electrode of LED chip 6 by gold thread 4, for the electrode of LED chip 6 is drawn; Macromolecule insulator 2 is high temperature resistant, insulating material, for fixing conductive pin 1 and metal heat-conducting substrate 3; Metal heat-conducting substrate 3 is made up of copper base silver coating material, for fixed L ED chip 6 and use when LED chip 6 is worked the dissipation of heat producing to go out.
WD-01 type eutectic material 5, forms WD-01 type eutectic material by tin, magnesium, strontium metal alloy compositions, and thermal conductivity is 265W/mk.In eutectic process, WD-01 type eutectic material 5 is placed on metal heat-conducting substrate 3 by certain amount.The heating of use eutectic furnace, WD-01 type eutectic material 5 is molten binds attaching liq for high concentration, and liquation, without bursting point, increases flowing of active material, reduces hot interface resistance, and thermal resistance is little, heat-transfer rate is fast.Above LED chip 6 is placed on, adjust pressure, it is reinforced, release heating plate, naturally cooling, die bond completes.WD-01 type eutectic material 5 merges with effective low thermal resistance of metal heat-conducting substrate 3 for realizing LED chip 6.
Fluorescent material 7 is solidificated in LED chip 6 surfaces, uses LED lamp pearl to appear the light of different colours by the fluorescent material 7 that uses different size.
Fluorescent material 7 is lived in 8 embeddings of resin colloid, gold thread 4, LED chip 6, forms lens shape, increases the light effect that in LED lamp pearl front.
Claims (3)
1. a large-power LED light bead for high efficiency and heat radiation, comprises LED chip, eutectic material, metal heat-conducting substrate, conductive pin, macromolecular material insulator, fluorescent material, resin colloid; It is characterized in that, described eutectic material is WD-01 type eutectic material.
2. the large-power LED light bead of a kind of high efficiency and heat radiation according to claim 1, is characterized in that, described WD-01 type eutectic material is the alloy material that a kind of thermal conductivity is high.
3. the large-power LED light bead of a kind of high efficiency and heat radiation according to claim 1, is characterized in that, the alloy material that described thermal conductivity is high is a kind of tin, magnesium, strontium metal alloy, and thermal conductivity is 265W/mk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410199168.XA CN103943758A (en) | 2014-05-13 | 2014-05-13 | Efficient heat-dissipation high-power LED (light-emitting diode) bulb |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410199168.XA CN103943758A (en) | 2014-05-13 | 2014-05-13 | Efficient heat-dissipation high-power LED (light-emitting diode) bulb |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103943758A true CN103943758A (en) | 2014-07-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410199168.XA Pending CN103943758A (en) | 2014-05-13 | 2014-05-13 | Efficient heat-dissipation high-power LED (light-emitting diode) bulb |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103943758A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1380703A (en) * | 2001-04-09 | 2002-11-20 | 株式会社东芝 | Luminescent device |
| US20080093620A1 (en) * | 2006-10-18 | 2008-04-24 | Young Lighting Technology Corporation | Led package and manufacturing method thereof |
| CN201918423U (en) * | 2010-12-07 | 2011-08-03 | 山东山泰集团有限公司 | LED heat conduction and dissipation mechanism |
-
2014
- 2014-05-13 CN CN201410199168.XA patent/CN103943758A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1380703A (en) * | 2001-04-09 | 2002-11-20 | 株式会社东芝 | Luminescent device |
| US20080093620A1 (en) * | 2006-10-18 | 2008-04-24 | Young Lighting Technology Corporation | Led package and manufacturing method thereof |
| CN201918423U (en) * | 2010-12-07 | 2011-08-03 | 山东山泰集团有限公司 | LED heat conduction and dissipation mechanism |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140723 |