CN103943700B - A kind of growth InGaAsN thin film on gaas substrates and preparation method thereof - Google Patents
A kind of growth InGaAsN thin film on gaas substrates and preparation method thereof Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 88
- 239000010408 film Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 8
- 238000007872 degassing Methods 0.000 claims description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
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- 238000005516 engineering process Methods 0.000 description 7
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- 238000013082 photovoltaic technology Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of growth InGaAsN thin film on gaas substrates, including the GaAs cushion grown on gaas substrates, the InGaAsN epitaxial layer thin film that is grown on GaAs cushion.Invention additionally discloses the preparation method of above-mentioned growth InGaAsN thin film on gaas substrates, GaAs cushion and InGaAsN epitaxial layer thin film and all use molecular beam epitaxy accretion method.The InGaAsN film surface that the present invention obtains is smooth, composition uniform, carries a width of 1eV, to field of semiconductor devices, and especially solar cell field, there is positive promotion meaning.
Description
Technical field
The present invention relates to the technical field of semiconductor laminated solar cell material, be grown in particularly to one
InGaAsN thin film on GaAs substrate and preparation method thereof.
Background technology
Along with developing rapidly of solar energy power generating industry and market, and at spacecraft energy resource system
Under the traction of demand, photovoltaic technology constantly obtains important breakthrough: crystalline silicon, non-crystalline silicon, the polysilicon sun are electric
Pond, Group III-V compound semiconductor battery, II-VI group compound semiconductor cell etc., the increasing sun
Battery technology reaches its maturity, and meanwhile, corresponding photoelectric transformation efficiency improves constantly, and makes the photovoltaic technology of today
It is obtained in space and ground and is increasingly widely applied.Group III-V compound semiconductor based on GaAs
Developing rapidly of battery technology is breakthrough the most noticeable, landmark；And GaAs base system solar cell
Efficiency is high, anti-radiation performance is good, high temperature resistant, good reliability, meets the spatial environments requirement to solar cell,
Therefore, GaAs base system solar cell the most progressively replaces silicon series solar cell in space science field, becomes empty
Between the main power source of solar power system.At present, the GaAs efficient multi-node lamination sun based on GaAs substrate
Battery has obtained the photoelectric transformation efficiency of ＞ 41%.Can carry as 1.42eV due to GaAs material, and single
Knot GaAs solar cell can only absorb the sunlight of a certain specific wavelength, and therefore its photoelectric transformation efficiency is limited
System.In order to improve the solaode utilization rate to sunlight, need to use many knot lamination solar cell knots
Structure, carries out " segmentation " to solar spectrum.
On this, will obtain more high-photoelectric transformation efficiency, many knot stacked solar cell, cascade solar cells can band coupling be to close
Key.The most conventional three knot GaAs system solar cell aspects, mainly GaInP/InGaAs/Ge (1.84/1.4/0.67)
Structure solar cell, this system, with Lattice Matching for overriding concern principle, limits the selection of material system,
The conversion efficiency room for promotion of battery is very limited.Three-knot laminated battery is seriously restricted in order to solve band gap mismatch
The problem of performance, it is the Lattice Matching of substrate that state-of-the-art technology attempts using GaAs, and end battery bandwidth becomes 1
The more satisfactory of eV can mate system by band, and such conversion efficiency can increase.In addition to three-knot laminated battery, logical
Crossing Theoretical Calculation, the material with a width of 1eV also can be as the 3rd junction battery of four knot stacked solar cell, cascade solar cells, this
Sample energy band mates even more ideal (1.8/1.4/1.0/0.67eV), and the conversion efficiency of light can be higher.And apply at present
Most materials with a width of 1eV is In0.3Ga0.7As, but, due to In0.3Ga0.7As Yu GaAs lattice
Mismatch relatively big (lattice mismatch is 2.15%) can reduce thin film epitaxy quality, and what lattice mismatch was brought penetrates
Dislocation, stress, produce substantial amounts of dislocation, defect and surface undulation in making epitaxial material body, thus dislike
Change the performance of device, cause solar cell photoelectric conversion efficiency low.For reducing defect concentration, growth
In0.3Ga0.7As needs to introduce the cushion link that growth technique is more complicated, adds many time and warp undoubtedly
Ji cost, is unfavorable for that the trend that current solar cell develops, the newest 1eV material need to be developed further.
Research finds, dilute N semiconducting compound, i.e. in traditional III-V semiconductor compound, is incorporated to a small amount of
N, form polynary semiconducting compound, this material system have uniqueness bandgap.Wherein,
This dilute N semiconducting compound of InGaAsN, for solar cell, has tempting Research Prospects especially,
Because this material system not only can regulate bandwidth (theoretic bandwidth can reach 1eV) on a large scale, and when containing
Amount ratio is during for In/N=2.8, and InGaAsN crystalline material just mates completely with GaAs substrate lattice.Such
Energy gap and lattice paprmeter feature, be that ideal material tied by solar cell the 3rd.But GaInNAs thin film
Acquisition be the most difficult: first, there is a ultimate value in N being incorporated in GaAs, about 2%,
And the InGaAsN a width of 1eV of material band to be realized, then the content of N must reach about 3%, it is seen that real
Existing N being effectively incorporated in the material is the most difficult；Secondly, InGaAsN Yu GaAs lattice to be made
Joining, then In/N=2.8 in material, it is also the biggest for will accurately controlling this ratio difficulty；Finally, being incorporated to of N
After, material is the most extremely susceptible to be separated, especially In atom, easily separates out on surface, divides with phase
From being susceptible to, being uniformly incorporated to of In and N also has certain difficulty.Therefore the extension of 1eV InGaAsN is raw
The emphasis of long always research, especially in solar cell field.And according to current growth technology, especially
It is the development of low temperature MBE technology, can with the material InGaAsN for 1eV had been provided with growth can
Row.
Summary of the invention
In order to overcome the disadvantages mentioned above of prior art with not enough, it is an object of the invention to provide one and be grown in
InGaAsN thin film on GaAs substrate, surfacing, crystal mass are good.
Another object of the present invention is to provide the system of above-mentioned growth InGaAsN thin film on gaas substrates
Preparation Method.
The purpose of the present invention is achieved through the following technical solutions:
A kind of growth InGaAsN thin film on gaas substrates, including growing on gaas substrates
GaAs cushion, the InGaAsN epitaxial layer thin film being grown on GaAs cushion.
The thickness of described GaAs cushion is 100～150nm.
The thickness of described InGaAsN epitaxial layer thin film is 300nm～1 μm.
The preparation method of a kind of growth InGaAsN thin film on gaas substrates, comprises the following steps:
(1) GaAs substrate is cleaned；
(2) GaAs substrate is carried out degasification pretreatment；
(3) GaAs substrate is carried out deoxygenated film process；
(4) growth GaAs cushion: GaAs underlayer temperature is between 540 DEG C～580 DEG C, Ga source temperature
Being 900 DEG C～950 DEG C, the temperature in As source is 240～270 DEG C, chamber pressure 3 × 10-5～1 × 10-6Torr,
V-III line ratio is 20～30, and growth rate is 0.7～1.5ML/s, grows GaAs cushion；
(5) growth InGaAsN epitaxial layer thin film: GaAs underlayer temperature at 380～440 DEG C, Ga source temperature
Degree is 900 DEG C～950 DEG C, and the temperature in As source is 240～270 DEG C, chamber pressure 2.0～3.0 × 10-5Torr,
In the case of being not counted in N, V-III line ratio is 20～35, and the power producing radio frequency N plasma is
180～200W, N2Flow is 0.1～0.2sccm, the speed of growth 1.0～1.6ML/s, outside growth InGaAsN
Prolong layer film.
Step (1) described cleaning GaAs substrate, particularly as follows:
Ultrasonic removal GaAs substrate surface pickup granule；Through trichloro ethylene, acetone, methanol washing, go
Except surface organic matter；GaAs substrate is placed on H2SO4:H2O2:H2Corrosion 1～2 point in O solution (3:1:1)
Clock；Clean through HCl and remove oxide on surface and Organic substance；Deionized water rinses；GaAs lining after cleaning
The end, dries up through the drying nitrogen filtered.
Step (2) is described carries out degasification pretreatment to GaAs substrate, particularly as follows:
GaAs substrate after cleaning sends into molecular beam epitaxy Sample Room pre-degasification half an hour；It is re-fed into passing
Pass room 300～400 DEG C of degasification 1～1.5 hours, after completing degasification, send into growth room.
Step (3) is described carries out deoxygenated film process to GaAs substrate, particularly as follows:
Under arsenic line is protected, GaAs underlayer temperature is risen to 600～650 DEG C, high-temperature baking 10～15 minutes.
The thickness of described GaAs cushion is 100～150nm.
The thickness of described InGaAsN epitaxial layer thin film is 300nm～1 μm.
Compared with prior art, the present invention has the following advantages and beneficial effect:
(1) growth of present invention InGaAsN thin film on gaas substrates, first gives birth on gaas substrates
Long GaAs cushion, simple in construction, the InGaAsN film surface obtained is smooth, composition uniform, favorably
In actual production application.
(2) preparation method of the present invention, applies low temperature MBE technology, and obtain is grown in GaAs substrate
On InGaAsN thin film, carry a width of 1eV, technical field be a new breakthrough, can be to quasiconductor
Devices field, especially solar cell field, have positive promotion meaning.
(3) growth that the preparation method of the present invention obtains InGaAsN thin film on gaas substrates, it is achieved
Four kinds of components are uniformly incorporated to, and efficiently solve the phenomenon that being separated easily occurs in growth InGaAsN, thus
Obtain the quaternary thin-film material of better quality.
Accompanying drawing explanation
Fig. 1 is the signal of the growth prepared of embodiments of the invention InGaAsN thin film on gaas substrates
Figure.
Fig. 2 is the room temperature of the growth prepared of embodiments of the invention InGaAsN thin film on gaas substrates
Fluorescence spectrum figure.
Fig. 3 is the scanning of the growth prepared of embodiments of the invention InGaAsN thin film on gaas substrates
Electron microscope picture.
Fig. 4 be the growth prepared of embodiments of the invention InGaAsN thin film secondary on gaas substrates from
Sub-mass spectrum.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not
It is limited to this.
Embodiment 1
The preparation method of the growth of the present embodiment InGaAsN thin film on gaas substrates, including following step
Rapid:
(1) GaAs substrate is cleaned, particularly as follows:
Use the n-GaAs substrate in (001) crystal orientation；Ultrasonic removal GaAs substrate surface pickup granule；Warp
Cross trichloro ethylene, acetone, methanol washing, remove surface organic matter；GaAs substrate is placed on
H2SO4:H2O2:H2Corrosion 1 minute in O solution (3:1:1)；Clean through HCl and remove oxide on surface and have
Machine thing；Deionized water rinses；GaAs substrate after cleaning dries up through the drying nitrogen filtered.
(2) GaAs substrate is carried out degasification pretreatment, particularly as follows:
GaAs substrate after cleaning sends into molecular beam epitaxy Sample Room pre-degasification half an hour；It is re-fed into
300 DEG C, transfer chamber degasification 1.5 hours, sends into growth room after completing degasification；
(3) GaAs substrate is carried out deoxygenated film process, particularly as follows: under arsenic line is protected, by GaAs
Underlayer temperature rises to 600 DEG C, high-temperature baking 15 minutes.
(4) growth GaAs cushion: GaAs underlayer temperature is 540 DEG C, and Ga source temperature is 900 DEG C,
The temperature in As source is 240 DEG C, chamber pressure 1 × 10-6Torr, V-III line ratio is 20, and growth rate is
0.7ML/s, growth thickness is the GaAs cushion of 100nm；This step is to InGaAsN epitaxial layer thin film
The flatness on surface plays an important role.
(5) growth InGaAsN epitaxial layer thin film: GaAs underlayer temperature is 380 DEG C, and Ga source temperature is
900 DEG C, the temperature in As source is 240 DEG C, and chamber pressure is 3.0 × 10-5Torr, is being not counted in the situation of N
Lower V-III line ratio is 20, and the power producing radio frequency N plasma is 180W, N2Flow is 0.1
Sccm, speed of growth 1.0ML/s, growth thickness is the InGaAsN epitaxial layer thin film of 300nm.
As it is shown in figure 1, the InGaAsN thin film that the growth prepared of the present embodiment is on gaas substrates, including
The GaAs cushion 12 being grown on GaAs substrate 11, the InGaAsN being grown on GaAs cushion 12
Epitaxial layer thin film 13.
Fig. 2 is the room temperature fluorescence light of the growth prepared of the present embodiment InGaAsN thin film on gaas substrates
Spectrogram, as shown in Figure 2, a width of 1eV of band of InGaAsN epitaxial layer thin film, the preparation side of the present invention is described
Method energy successful growth InGaAsN.
Fig. 3 is that the scanning electron of the growth prepared of the present embodiment InGaAsN thin film on gaas substrates shows
Micro mirror figure.From the figure 3, it may be seen that the surface of InGaAsN epitaxial layer thin film is more smooth, there is not the inclined of In atom
Analysis phenomenon, illustrates that preparation method of the present invention can be prevented effectively from InGaAsN and be separated, improves the quality of thin film.
Fig. 4 is the growth prepared of the present embodiment InGaAsN thin film secondary ion mass spectrum on gaas substrates
Figure.As shown in Figure 4, each element of InGaAsN epitaxial layer thin film distribution situation in the material.Along with secondary
The increase of ion etching time, the strength information of four kinds of elements is the most more stable, illustrates that each element is at thin film
Being equally distributed in longitudinal degree of depth, particularly with In and atom N, this being uniformly distributed is the rareest.
GaAs cushion and the InGaAsN epitaxial layer thin film of the present invention all use molecular beam epitaxy accretion method,
Not only atom N can be carried out and effectively be incorporated to, thus obtain the quaternary semiconductor material system with a width of 1eV again
The flatness of film surface can be improved, it is to avoid the surface segregation phenomenon of In atom.
Embodiment 2
The preparation method of the growth of the present embodiment InGaAsN thin film on gaas substrates, including following step
Rapid:
(1) GaAs substrate is cleaned, particularly as follows:
Use the n-GaAs substrate in (001) crystal orientation；Ultrasonic removal GaAs substrate surface pickup granule；Warp
Cross trichloro ethylene, acetone, methanol washing, remove surface organic matter；GaAs substrate is placed on
H2SO4:H2O2:H2Corrosion 2 minutes in O solution (3:1:1)；Clean through HCl and remove oxide on surface and have
Machine thing；Deionized water rinses；GaAs substrate after cleaning dries up through the drying nitrogen filtered.
(2) GaAs substrate is carried out degasification pretreatment, particularly as follows:
GaAs substrate after cleaning sends into molecular beam epitaxy Sample Room pre-degasification half an hour；It is re-fed into
400 DEG C, transfer chamber degasification 1 hour, sends into growth room after completing degasification；
(3) GaAs substrate is carried out deoxygenated film process, particularly as follows: under arsenic line is protected, by GaAs
Underlayer temperature rises to 650 DEG C, high-temperature baking 10 minutes.
(4) growth GaAs cushion: GaAs underlayer temperature is 580 DEG C, and Ga source temperature is 950 DEG C,
The temperature in As source is 270 DEG C, and chamber pressure is 3 × 10-5ToRr, V-III line ratio is 30, growth rate
For 1.5ML/s, growth thickness is the GaAs cushion of 150nm；This step is thin to InGaAsN epitaxial layer
The flatness on film surface plays an important role.
(5) growth InGaAsN epitaxial layer thin film: GaAs underlayer temperature is at 440 DEG C, and Ga source temperature is
950 DEG C, the temperature in As source is 270 DEG C, chamber pressure 2.0 × 10-5Torr, in the case of being not counted in N
V-III line ratio is 35, and the power producing radio frequency N plasma is 200W, N2Flow is 0.2sccm,
Speed of growth 1.6ML/s, growth thickness is the InGaAsN epitaxial layer thin film of 1.0 μm.
Growth prepared by the present embodiment InGaAsN thin film on gaas substrates, including being grown in GaAs
GaAs cushion on substrate, the InGaAsN epitaxial layer thin film being grown on GaAs cushion.
The growth that the present embodiment prepares InGaAsN films test result on gaas substrates and enforcement
Example 1 is similar to, and does not repeats them here.
Above-described embodiment is the present invention preferably embodiment, but embodiments of the present invention are not by described reality
Execute the restriction of example, the change made under other any spirit without departing from the present invention and principle, modification,
Substitute, combine, simplify, all should be the substitute mode of equivalence, within being included in protection scope of the present invention.
Claims (7)
1. the preparation method growing InGaAsN thin film on gaas substrates, it is characterised in that bag
Include following steps:
(1) GaAs substrate is cleaned；
(2) GaAs substrate is carried out degasification pretreatment；
(3) GaAs substrate is carried out deoxygenated film process；
(4) growth GaAs cushion: GaAs underlayer temperature is between 540 DEG C～580 DEG C, Ga source temperature
Being 900 DEG C～950 DEG C, the temperature in As source is 240～270 DEG C, chamber pressure 3 × 10-5～1 × 10-6Torr,
V-III line ratio is 20～30, and growth rate is 0.7～1.5ML/s, grows GaAs cushion；
(5) growth InGaAsN epitaxial layer thin film: GaAs underlayer temperature at 380～440 DEG C, Ga source temperature
Being 900 DEG C～950 DEG C, the temperature in As source is 240～270 DEG C, chamber pressure 2.0～3.0 × 10-5Torr,
Being not counted in V-III line ratio in the case of N is 20～35, and the power producing radio frequency N plasma is
180～200W, N2Flow is 0.1～0.2sccm, the speed of growth 1.0～1.6ML/s, outside growth InGaAsN
Prolong layer film.
The preparation method of growth the most according to claim 1 InGaAsN thin film on gaas substrates,
It is characterized in that, step (1) described cleaning GaAs substrate, particularly as follows:
Ultrasonic removal GaAs substrate surface pickup granule；Through trichloro ethylene, acetone, methanol washing, remove
Surface organic matter；GaAs substrate is placed on H2SO4:H2O2:H2O be 3:1:1 solution in corrode 1～2 point
Clock；Clean through HCl and remove oxide on surface and Organic substance；Deionized water rinses；GaAs lining after cleaning
The end, dries up through the drying nitrogen filtered.
The preparation method of growth the most according to claim 1 InGaAsN thin film on gaas substrates,
It is characterized in that, step (2) is described carries out degasification pretreatment to GaAs substrate, particularly as follows:
GaAs substrate after cleaning sends into molecular beam epitaxy Sample Room pre-degasification half an hour；It is re-fed into
Transfer chamber 300～400 DEG C of degasification 1～1.5 hours, send into growth room after completing degasification.
The preparation method of growth the most according to claim 1 InGaAsN thin film on gaas substrates,
It is characterized in that, step (3) is described carries out deoxygenated film process to GaAs substrate, particularly as follows:
Under arsenic line is protected, GaAs underlayer temperature is risen to 600～650 DEG C, high-temperature baking 10～15 minutes.
The preparation method of growth the most according to claim 1 InGaAsN thin film on gaas substrates,
It is characterized in that, the thickness of described GaAs cushion is 100～150nm.
The preparation method of growth the most according to claim 1 InGaAsN thin film on gaas substrates,
It is characterized in that, the thickness of described InGaAsN epitaxial layer thin film is 300nm～1 μm.
The preparation method of growth the most according to claim 1 InGaAsN thin film on gaas substrates,
It is characterized in that, a width of 1eV of band of described InGaAsN epitaxial layer thin film.
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| CN103325863A (en) * | 2013-06-07 | 2013-09-25 | 华南理工大学 | InGaAs thin film growing on GaAs substrate and manufacturing method thereof |
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