CN203288608U - InGaAs film growing on GaAs substrate - Google Patents
InGaAs film growing on GaAs substrate Download PDFInfo
- Publication number
- CN203288608U CN203288608U CN2013203263781U CN201320326378U CN203288608U CN 203288608 U CN203288608 U CN 203288608U CN 2013203263781 U CN2013203263781 U CN 2013203263781U CN 201320326378 U CN201320326378 U CN 201320326378U CN 203288608 U CN203288608 U CN 203288608U
- Authority
- CN
- China
- Prior art keywords
- gaas substrate
- resilient coating
- buffer layer
- ingaas
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses an InGaAs film growing on a GaAs substrate. The InGaAs film growing on the GaAs substrate includes the GaAs substrate, an InGaAs gradient buffer layer and an In<0.3>Ga<0.7>As epitaxial thin film arranged successively from bottom up. The InGaAs gradient buffer layer includes an In<0.08-0.10>Ga<0.90-0.92>As buffer layer, an In<0.17-0.18>Ga<0.81-0.83>As buffer layer, an In<0.26-0.28>Ga<0.72-0.74>As buffer layer and an In<0.32-0.34>Ga<0.66-0.68>As buffer layer arranged successively from bottom up. The gradient buffer layer of the InGaAs film growing on the GaAs substrate provided by the utility model is reasonable and optimized in structure and is economical and efficient. The In<0.3>Ga<0.7>As epitaxial thin film is low in defect density and high in crystal quality. Therefore, the InGaAs film growing on the GaAs substrate is convenient for promotion and application.
Description
Technical field
The utility model relates to the photoelectric material technical field, particularly is grown in the InGaAs film on the GaAs substrate.
Background technology
Along with developing rapidly of solar energy power generating industry and market, and under the traction of spacecraft energy resource system demand, photovoltaic technology constantly obtains important breakthrough: crystalline silicon, amorphous silicon, polycrystalline silicon solar cell, the Ⅲ-Ⅴ compound semiconductor battery, group Ⅱ-Ⅵ compound semiconductor battery etc., increasing solar cell technology reaches its maturity, simultaneously, corresponding photoelectric conversion efficiency improves constantly, and makes the photovoltaic technology of today all obtain application more and more widely in space and ground.Developing rapidly of Ⅲ-Ⅴ compound semiconductor battery technology based on GaAs is the most noticeable, landmark breakthrough; And GaAs base system efficiency of solar cell is high, anti-radiation performance good, high temperature resistant, good reliability, meet the requirement of space environment to solar cell, therefore, GaAs base system solar cell just progressively replaces silicon series solar cell in the space science field, become the main power source of space solar power system.Due to being with as 1.42eV of GaAs material, unijunction GaAs solar cell can only absorb the sunlight of a certain specific wavelength, so its photoelectric conversion efficiency is restricted.In order to improve the utilance of solar cell to sunlight, need to adopt many knot lamination solar cell structures, solar spectrum is carried out " cutting apart ".At present, the GaAs efficient multi-node stacked solar cell, cascade solar cell based on the GaAs substrate obtains＞41% photoelectric conversion efficiency.
Obtain more high-photoelectric transformation efficiency, the coupling of being with of tying stacked solar cell, cascade solar cell is crucial more.Conventional three knot GaAs are the solar cell aspect at present, it is mainly GaInP/InGaAs/Ge (1.84/1.4/0.67) structure solar cell, this system is take Lattice Matching as the overriding concern principle, and then limited the selection of material system, and the conversion efficiency room for promotion of battery is very limited.In order to solve the problem of the serious restriction three knot laminated cell performances of band gap mismatch, the state-of-the-art technology trial is adopted and selected GaAs is the lattice mismatch system of substrate, and end battery bandwidth is that the ideal of 1eV can be with the coupling system.It is 1.8/1.4/1.0/0.67eV that the ideal of four knot stacked solar cell, cascade solar cells can be with coupling, calculate by theory, although 1eV GaInNAs material is comparatively suitable as band gap and the lattice size of three-junction solar battery, but the minority carrier life time of GaInNAs epitaxial material is low, seriously limit the current density of four knot stacked solar cell, cascade solar cells, become the key factor that restriction efficiency improves.Therefore,, according to the development of present growth technology, epitaxial device and the performance of material, can be ternary semiconductor Compound I n with the optimal material for 1eV
0.3Ga
0.7As.
The photoelectric characteristic of compound semiconductor and fault in material density have very close contacting.Therefore, the In for preparing high-quality, fabricating low-defect-density
0.3Ga
0.7The As film is extremely important.In
0.3Ga
0.7As(1eV, a=0.57748nm) and GaAs(a=0.56533nm) lattice mismatch of substrate be 2.15%, if at GaAs substrate direct growth In
0.3Ga
0.7The threading dislocation that As material, lattice mismatch bring, stress, can make in the epitaxial material body and produce a large amount of dislocation, defect and surface undulation, thereby the performance of deterioration of device causes the solar cell photoelectric conversion efficiency low.Therefore, the high-quality In of preparation on the GaAs substrate
0.3Ga
0.7The As film is focus and the difficult point of research always.In order to obtain the In that defect concentration is low, material property is good
0.3Ga
0.7As material, optimal path are elder generation's epitaxial growth cushioning layer materials on the GaAs substrate, and then epitaxial growth In
0.3Ga
0.7The As material.
At present, what adopt in GaAs base system efficient multi-node lamination solar cell is all that the buffer layer structure such as content gradually variational, component saltus step, component inversion of multilayer is due to the deficiency on design and processes, while growing the InGaAs graded buffer layer in the solar cell device, resilient coating In constituent content is determined by experience mostly, and thickness is larger, so high quality epitaxial growth In
0.3Ga
0.7The buffer layer structure that As introduces lacks certain reasonability in design, and larger thickness can cause growth time longer, and cost is higher, In
0.3Gs
0.7The As epitaxial quality does not reach best practical function yet.
The utility model content
For the above-mentioned shortcoming and deficiency that overcome prior art, the purpose of this utility model is to provide the InGaAs film on a kind of GaAs of being grown in substrate, and defect concentration is low, crystal mass is high.
The purpose of this utility model is achieved through the following technical solutions:
Be grown in the InGaAs film on the GaAs substrate, comprise the GaAs substrate, InGaAs graded buffer layer and the In that are arranged in order from the bottom to top
0.3Ga
0.7The As epitaxial film; Described InGaAs graded buffer layer comprises the In that is arranged in order from the bottom to top
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The As resilient coating.
Described In
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The thickness of As resilient coating is 9～11nm.
Be grown in the preparation method of the InGaAs film on the GaAs substrate, comprise the following steps:
(1) the GaAs substrate cleans;
(2) degassing processing of GaAs substrate;
(3) GaAs substrate surface deoxidize is processed;
(4) at GaAs Grown InGaAs graded buffer layer: the GaAs underlayer temperature is between 550～570 ℃, and the fixing temperature in Ga source and As source, by changing the temperature in In source, successively at GaAs Grown In
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The As resilient coating; In wherein grows
0.08～0.10Ga
0.90～0.92During the As resilient coating, the temperature in In source is 675～680 ℃; Growth In
0.17～0.19Ga
0.81～0.83During the As resilient coating, the temperature in In source is 715～720 ℃; Growth In
0.26～0.28Ga
0.72～0.74During the As resilient coating, the temperature in In source is 730～735 ℃; Growth In
0.32～0.34Ga
0.66～0.68During the As resilient coating, the temperature in In source is 740～745 ℃;
(5) In that grows on the InGaAs graded buffer layer
0.3Ga
0.7The As epitaxial film.
Described In
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The thickness of As resilient coating is 9～11nm.
The described GaAs substrate of step (1) cleans, and is specially:
Ultrasonic removal GaAs substrate surface pickup particle; , through trichloroethylene, acetone, methanol wash, remove surface organic matter; The GaAs substrate is placed on the H of 60 ℃～65 ℃
2SO
4: H
2O
2: H
2Corroded in O solution 2～3 minutes; Clean and remove oxide on surface and organic substance through HCl; Rinsed with deionized water; GaAs substrate after cleaning dries up with the drying nitrogen through filtering.
The degassing processing of the described GaAs substrate of step (2) is specially:
After the cleaning of GaAs substrate is complete, send into the pre-degasification of molecular beam epitaxy Sample Room 30～40 minutes; Send into again 300～400 ℃ of transfer chambers degasification 1.5～2 hours, send into growth room after completing degasification.
The described GaAs substrate surface of step (3) deoxidize is processed, and is specially:
After the GaAs substrate enters growth room, under arsenic line protection, underlayer temperature is risen to 680 ℃～700 ℃, high-temperature baking 15～20 minutes, remove the oxidation film layer of substrate surface.
The described In that grows on the InGaAs graded buffer layer of step (5)
0.3Ga
0.7The As epitaxial film is specially:
The GaAs underlayer temperature is at 550～570 ℃, chamber pressure 4.0～4.5 * 10
-5Under pa, V/III value 60～80, the speed of growth 0.6～0.8ML/s condition, growth In
0.3Ga
0.7The As epitaxial film.
Compared with prior art, the utlity model has following advantage and beneficial effect:
(1) InGaAs graded buffer layer of the present utility model comprises the In that is arranged in order from the bottom to top
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68As resilient coating, science have been controlled In component in graded buffer layer, overcome graded buffer layer technology in the early time the In constituent content is blindly selected, and have structurally obtained optimization.
(2) InGaAs graded buffer layer of the present utility model can effectively filter the dislocation that causes due to lattice mismatch between substrate and epitaxial loayer, and material stress is discharged, and the epitaxial material surfacing, and defect concentration is low, the In of acquisition
0.3Ga
0.7The As crystalline quality is greatly improved.
(3) the utility model in the In constituent content, is controlled the thickness of graded buffer layer in optimizing graded buffer layer, compares graded buffer layer technology in the early time, buffer layer thickness significantly reduces, economic benefit is obvious, and the growth time shortening, is conducive to produce and apply.
Description of drawings
Fig. 1 is the structural representation that is grown in the InGaAs film on the GaAs substrate of embodiment 1.
Fig. 2 is the In of the preparation of embodiment 1
0.3Ga
0.7The atomic force mirror microscope figure on As epitaxial film surface.
Fig. 3 is the In of the preparation of embodiment 1
0.3Ga
0.7The two swing curve figure of the X ray of As epitaxial film.
Embodiment
, below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, but execution mode of the present utility model is not limited to this.
The present embodiment is grown in the preparation method of the InGaAs film on the GaAs substrate, comprises the following steps:
(1) the GaAs substrate cleans: ultrasonic removal GaAs substrate surface pickup particle; , through trichloroethylene, acetone, methanol wash, remove surface organic matter; The GaAs substrate is placed on the H of 60 ℃～65 ℃
2SO
4: H
2O
2: H
2In O (5:1:1) solution, corrosion is 2 minutes; Clean and remove oxide on surface and organic substance through HCl; Rinsed with deionized water; GaAs substrate after cleaning dries up with the drying nitrogen through filtering.
(2) degassing processing of GaAs substrate: after the cleaning of GaAs substrate is complete, send into the pre-degasification of molecular beam epitaxy Sample Room 30 minutes; Send into again 300 ℃ of transfer chambers degasification 1.5 hours, send into growth room after completing degasification.
(3) GaAs substrate surface deoxidize is processed: after the GaAs substrate enters growth room, under the protection of arsenic line, underlayer temperature is risen to 680 ℃ ℃, high-temperature baking 15 minutes, remove the oxidation film layer of substrate surface.
(4) at GaAs Grown InGaAs graded buffer layer: the GaAs underlayer temperature is between 550 ℃, and fixedly the temperature in Ga source and As source,, by changing the temperature in In source, adopt the molecular beam epitaxial growth technology, successively at GaAs Grown In
0.08Ga
0.92As resilient coating, In
0.17Ga
0.83As resilient coating, In
0.26Ga
0.74As resilient coating and In
0.32Ga
0.68The As resilient coating; In wherein grows
0.08Ga
0.92During the As resilient coating, the temperature in In source is 675 ℃; Growth In
0.17Ga
0.83During the As resilient coating, the temperature in In source is 715 ℃; Growth In
0.26Ga
0.74During the As resilient coating, the temperature in In source is 730 ℃; Growth In
0.32Ga
0.668During the As resilient coating, the temperature in In source is 740 ℃;
In
0.08Ga
0.92As resilient coating, In
0.17Ga
0.83As resilient coating, In
0.26Ga
0.74As resilient coating and In
0.32Ga
0.68The thickness of As resilient coating is 9nm.
(5) In that grows on the InGaAs graded buffer layer
0.3Ga
0.7The As epitaxial film: the GaAs underlayer temperature is at 550 ℃, chamber pressure 4.0 * 10
-5Under pa, V/III value 60, speed of growth 0.6ML/s condition, adopt the molecular beam epitaxial growth technology, growth In
0.3Ga
0.7The As epitaxial film, can be according to the actual requirement of prepared device, the In of growth respective thickness
0.3Ga
0.7The As epitaxial film.
As shown in Figure 1, the present embodiment preparation be grown in InGaAs film on the GaAs substrate, comprise the GaAs substrate 11, InGaAs graded buffer layer and the In that are arranged in order from the bottom to top
0.3Ga
0.7As epitaxial film 16; Described InGaAs graded buffer layer comprises the In that is arranged in order from the bottom to top
0.08Ga
0.92As resilient coating 12, In
0.17Ga
0.83As resilient coating 13, In
0.26Ga
0.74As resilient coating 14 and In
0.32Ga
0.68As resilient coating 15.
Fig. 2 is the In of the present embodiment preparation
0.3Ga
0.7The atomic force mirror microscope figure on As epitaxial film surface.As seen from the figure, the In of the present embodiment
0.3Ga
0.7The As epitaxial film has more smooth epitaxial surface, and surface roughness is only 0.56nm, has reached or In that the multilayer component-gradient buffer layer structure that is better than applying in the early time obtains
0.3Ga
0.7The As film.
Fig. 3 is the In of the present embodiment preparation
0.3Ga
0.7The two swing curve figure of the X ray of As epitaxial film.As seen from the figure, the In of the present embodiment
0.3Ga
0.7As epitaxial film crystalline quality is high, and the half-peak breadth of using the two swing curve tests of X ray to obtain is 116 ' ', the crystalline quality of epitaxial film multi-buffering-layer technology not long ago also will be got well.
Embodiment 2
The present embodiment is grown in the preparation method of the InGaAs film on the GaAs substrate, comprises the following steps:
(1) the GaAs substrate cleans: ultrasonic removal GaAs substrate surface pickup particle; , through trichloroethylene, acetone, methanol wash, remove surface organic matter; The GaAs substrate is placed on the H of 65 ℃
2SO
4: H
2O
2: H
2In O (5:1:1) solution, corrosion is 3 minutes; Clean and remove oxide on surface and organic substance through HCl; Rinsed with deionized water; GaAs substrate after cleaning dries up with the drying nitrogen through filtering.
(2) degassing processing of GaAs substrate: the GaAs substrate clean complete after, send into the pre-degasification of molecular beam epitaxy Sample Room half an hour; Send into again 400 ℃ of transfer chambers degasification 2 hours, send into growth room after completing degasification.
(3) GaAs substrate surface deoxidize is processed: after the GaAs substrate enters growth room, under the protection of arsenic line, underlayer temperature is risen to 700 ℃, high-temperature baking 20 minutes, remove the oxidation film layer of substrate surface.
(4) at GaAs Grown InGaAs graded buffer layer: the GaAs underlayer temperature is between 570 ℃, and fixedly the temperature in Ga source and As source,, by changing the temperature in In source, adopt the molecular beam epitaxial growth technology, successively at GaAs Grown In
0.10Ga
0.90As resilient coating, In
0.19Ga
0.81As resilient coating, In
0.28Ga
0.72As resilient coating and In
0.34Ga
0.66The As resilient coating; In wherein grows
0.10Ga
0.90During the As resilient coating, the temperature in In source is 680 ℃; Growth In
0.19Ga
0.81During the As resilient coating, the temperature in In source is 720 ℃; Growth In
0.28Ga
0.72During the As resilient coating, the temperature in In source is 735 ℃; Growth In
0.34Ga
0.66During the As resilient coating, the temperature in In source is 745 ℃;
In
.10Ga
0.90As resilient coating, In
0.19Ga
0.81As resilient coating, In
0.28Ga
0.72As resilient coating and In
0.34Ga
0.66The thickness of As resilient coating is 11nm.
(5) In that grows on the InGaAs graded buffer layer
0.3Ga
0.7The As epitaxial film: the GaAs underlayer temperature is at 570 ℃, chamber pressure 4.5 * 10
-5Under pa, V/III value 80, speed of growth 0.8ML/s condition, adopt the molecular beam epitaxial growth technology, growth In
0.3Ga
0.7The As epitaxial film, can be according to the actual requirement of prepared device, the In of growth respective thickness
0.3Ga
0.7The As epitaxial film.
The test result that is grown in the InGaAs film on the GaAs substrate of the present embodiment is similar to Example 1, does not repeat them here.
Above-described embodiment is the better execution mode of the utility model; but execution mode of the present utility model is not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present utility model and principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, within being included in protection range of the present utility model.
Claims (2)
1. be grown in the InGaAs film on the GaAs substrate, it is characterized in that, comprise the GaAs substrate, InGaAs graded buffer layer and the In that are arranged in order from the bottom to top
0.3Ga
0.7The As epitaxial film; Described InGaAs graded buffer layer comprises the In that is arranged in order from the bottom to top
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The As resilient coating.
2. the InGaAs film that is grown on the GaAs substrate according to claim 1, is characterized in that described In
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The thickness of As resilient coating is 9～11nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203263781U CN203288608U (en) | 2013-06-07 | 2013-06-07 | InGaAs film growing on GaAs substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203263781U CN203288608U (en) | 2013-06-07 | 2013-06-07 | InGaAs film growing on GaAs substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203288608U true CN203288608U (en) | 2013-11-13 |
Family
ID=49544959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013203263781U Expired - Lifetime CN203288608U (en) | 2013-06-07 | 2013-06-07 | InGaAs film growing on GaAs substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203288608U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325863A (en) * | 2013-06-07 | 2013-09-25 | 华南理工大学 | InGaAs thin film growing on GaAs substrate and manufacturing method thereof |
| CN113363338A (en) * | 2021-06-02 | 2021-09-07 | 中国电子科技集团公司第四十六研究所 | Method for growing GaInP film on GaAs substrate |
-
2013
- 2013-06-07 CN CN2013203263781U patent/CN203288608U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325863A (en) * | 2013-06-07 | 2013-09-25 | 华南理工大学 | InGaAs thin film growing on GaAs substrate and manufacturing method thereof |
| CN113363338A (en) * | 2021-06-02 | 2021-09-07 | 中国电子科技集团公司第四十六研究所 | Method for growing GaInP film on GaAs substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103325863A (en) | InGaAs thin film growing on GaAs substrate and manufacturing method thereof | |
| CN101859813B (en) | Method for manufacturing quadri-junction GaInP/GaAs/InGaAs/Ge solar cells | |
| CN101950774A (en) | Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery | |
| CN102569475B (en) | Four-node quaternary compound solar cell and preparation method thereof | |
| CN102560634A (en) | Method for growing InGaAs film on GaAs substrate | |
| CN104465843A (en) | Double-sided growth GaAs four-junction solar cell | |
| CN102244114A (en) | High-concentration multi-junction solar cell and preparation method thereof | |
| CN101859814B (en) | Method for growing InGaP/GaAs/Ge three-junction solar cell on silicon substrate | |
| CN103943700B (en) | A kind of growth InGaAsN thin film on gaas substrates and preparation method thereof | |
| CN203288608U (en) | InGaAs film growing on GaAs substrate | |
| CN105355670A (en) | Five-junction solar energy cells including DBR structure | |
| CN104157725B (en) | Method for manufacturing GaInP/GaAs/InGaAsP/InGaAs four-junction cascading solar cell | |
| CN103077983A (en) | Multi-junction solar battery and preparation method thereof | |
| CN106409958B (en) | Inverted triple-junction solar cell based on graphite substrate and preparation method thereof | |
| CN203826398U (en) | InGaAsN film growing on GaAs substrate | |
| CN108878549B (en) | Method for realizing quasi-omnidirectional silicon solar cell and quasi-omnidirectional analysis method | |
| CN105355668A (en) | In(0.3)Ga(0.7)As cell with amorphous buffer layer structure and preparation method thereof | |
| CN204315590U (en) | Silicon-based four-junction solar cell with double-sided growth | |
| CN104282795A (en) | Method for manufacturing GaInP/GaAs/InGaAs/Ge solar cell | |
| CN110165020A (en) | One kind being based on CdS/SnO2Mix the efficient Sb of N-type layer2Se3Hull cell and preparation method thereof | |
| CN205385027U (en) | Five knot solar cell that contain DBR structure | |
| CN102779890A (en) | Inverted triple-junction solar cell and method for manufacturing same | |
| CN105280745B (en) | Tetra- knot cascade solar cells of GaInP/GaAs/InGaAs/Ge and preparation method thereof | |
| CN204118094U (en) | Three-junction solar cell with optimized band gap structure | |
| CN202509157U (en) | Ingaas film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131113 |
|
| CX01 | Expiry of patent term |