CN103325863A - InGaAs thin film growing on GaAs substrate and manufacturing method thereof - Google Patents
InGaAs thin film growing on GaAs substrate and manufacturing method thereof Download PDFInfo
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- CN103325863A CN103325863A CN2013102245314A CN201310224531A CN103325863A CN 103325863 A CN103325863 A CN 103325863A CN 2013102245314 A CN2013102245314 A CN 2013102245314A CN 201310224531 A CN201310224531 A CN 201310224531A CN 103325863 A CN103325863 A CN 103325863A
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Abstract
The invention discloses an InGaAs thin film growing on a GaAs substrate. The InGaAs thin film comprises the GaAs substrate, an InGaAs gradient buffering layer and an In0.3Ga0.7As epitaxial thin film all of which are sequentially arranged from bottom to top. The InGaAs gradient buffering layer comprises an In0.08-0.10Ga0.90-0.92As buffering layer, an In0.17-0.19Ga0.81-0.83As buffering layer, an In0.26-0.28Ga0.72-0.74As buffering layer and an In0.32-0.34Ga0.66-0.68As buffering layer. The invention further discloses a method for manufacturing the InGaAs thin film growing on the GaAs substrate. The InGaAs thin film is simple and practical, the gradient buffering layer structure is reasonable, optimized, economical and efficient, and the In0.3Ga0.7As epitaxial thin film is low in defect density, good in crystalline quality and convenient to popularize and apply.
Description
Technical field
The present invention relates to the photoelectric material technical field, particularly be grown in InGaAs film on the GaAs substrate and preparation method thereof.
Background technology
Along with developing rapidly of solar energy power generating industry and market, and under the traction of spacecraft energy resource system demand, photovoltaic technology constantly obtains important breakthrough: crystalline silicon, amorphous silicon, polycrystalline silicon solar cell, the Ⅲ-Ⅴ compound semiconductor battery, group Ⅱ-Ⅵ compound semiconductor battery etc., increasing solar cell technology reaches its maturity, simultaneously, corresponding photoelectric conversion efficiency improves constantly, and makes the photovoltaic technology of today all obtain using more and more widely in space and ground.Developing rapidly of Ⅲ-Ⅴ compound semiconductor battery technology based on GaAs is the most noticeable, landmark breakthrough; And GaAs base system efficiency of solar cell is high, anti-radiation performance good, high temperature resistant, good reliability, meet space environment to the requirement of solar cell, therefore, GaAs base system solar cell just progressively replaces silicon series solar cell in the space science field, become the main power source of space solar power system.Because being with of GaAs material is 1.42eV, unijunction GaAs solar cell can only absorb the sunlight of a certain specific wavelength, so its photoelectric conversion efficiency is restricted.In order to improve solar cell to the utilance of sunlight, need to adopt many knot lamination solar cell structures, solar spectrum is carried out " cutting apart ".At present, the GaAs efficient multi-node stacked solar cell, cascade solar cell based on the GaAs substrate obtains＞41% photoelectric conversion efficiency.
Obtain more high-photoelectric transformation efficiency, the coupling of being with of tying stacked solar cell, cascade solar cell is crucial more.Conventional three knot GaAs are the solar cell aspect at present, it mainly is GaInP/InGaAs/Ge (1.84/1.4/0.67) structure solar cell, this system is take Lattice Matching as the overriding concern principle, and then limited the selection of material system, and the conversion efficiency room for promotion of battery is very limited.In order to solve the problem of the serious restriction three knot laminated cell performances of band gap mismatch, the state-of-the-art technology trial is adopted and selected GaAs is the lattice mismatch system of substrate, and end battery bandwidth is that the ideal of 1eV can be with the coupling system.It is 1.8/1.4/1.0/0.67eV that the ideal of four knot stacked solar cell, cascade solar cells can be with coupling, calculate by theory, although 1eV GaInNAs material is comparatively suitable as band gap and the lattice size of three-junction solar battery, but the minority carrier life time of GaInNAs epitaxial material is low, seriously limit the current density of four knot stacked solar cell, cascade solar cells, become the key factor that restriction efficient improves.Therefore, according to the development of present growth technology, epitaxial device and the performance of material, can be ternary semiconductor compound I n with the optimal material for 1eV
0.3Ga
0.7As.
The photoelectric characteristic of compound semiconductor and fault in material density have very close contacting.Therefore, the In of preparation high-quality, fabricating low-defect-density
0.3Ga
0.7The As film is extremely important.In
0.3Ga
0.7As(1eV, a=0.57748nm) and GaAs(a=0.56533nm) lattice mismatch of substrate be 2.15%, if at GaAs substrate direct growth In
0.3Ga
0.7The threading dislocation that As material, lattice mismatch bring, stress can make to produce a large amount of dislocation, defective and surface undulation in the epitaxial material body, thereby the performance of deterioration of device cause the solar cell photoelectric conversion efficiency low.Therefore, at the high-quality In of GaAs substrate preparation
0.3Ga
0.7The As film is focus and the difficult point of research always.In order to obtain the In that defect concentration is low, material property is good
0.3Ga
0.7As material, optimal path are elder generation's epitaxial growth cushioning layer materials on the GaAs substrate, and then epitaxial growth In
0.3Ga
0.7The As material.
At present, what adopt in the GaAs base system efficient multi-node lamination solar cell all is that the buffer layer structures such as content gradually variational, component saltus step, component inversion of multilayer are because the deficiency on the design and processes, when in the solar cell device, growing the InGaAs graded buffer layer, resilient coating In constituent content is determined by experience mostly, and thickness is larger, so high quality epitaxial growth In
0.3Ga
0.7The buffer layer structure that As introduces lacks certain reasonability in design, and larger thickness can cause growth time longer, and cost is higher, In
0.3Gs
0.7The As epitaxial quality does not reach best practical function yet.
Summary of the invention
Above-mentioned shortcoming and deficiency in order to overcome prior art the object of the present invention is to provide the InGaAs film on a kind of GaAs of being grown in substrate, and defect concentration is low, crystal mass is high.
Another object of the present invention is to provide the method for the InGaAs thin film technology on the above-mentioned GaAs of the being grown in substrate.
Purpose of the present invention is achieved through the following technical solutions:
Be grown in the InGaAs film on the GaAs substrate, comprise the GaAs substrate, InGaAs graded buffer layer and the In that are arranged in order from the bottom to top
0.3Ga
0.7The As epitaxial film; Described InGaAs graded buffer layer comprises the In that is arranged in order from the bottom to top
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～
0.19Ga
0.81～
0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.
32～0.34Ga
0.66～0.68The As resilient coating.
Described In
0.08～0.10Ga
0.
90～0.
92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.
34Ga
0.66～0.68The thickness of As resilient coating is 9～11nm.
Be grown in the InGaAs thin film technology method on the GaAs substrate, may further comprise the steps:
(1) the GaAs substrate cleans;
(2) degassing processing of GaAs substrate;
(3) GaAs substrate surface deoxidize is processed;
(4) at GaAs Grown InGaAs graded buffer layer: the GaAs underlayer temperature is between 550～570 ℃, and the fixing temperature in Ga source and As source is by changing the temperature in In source, successively at GaAs Grown In
0.08～0.
10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The As resilient coating; In wherein grows
0.08～0.10Ga
0.90～0.92During the As resilient coating, the temperature in In source is 675～680 ℃; Growth In
0.17～0.19Ga
0.81～0.83During the As resilient coating, the temperature in In source is 715～720 ℃; Growth In
0.26～0.28Ga
0.72～0.74During the As resilient coating, the temperature in In source is 730～735 ℃; Growth In
0.32～0.
34Ga
0.66～0.68During the As resilient coating, the temperature in In source is 740～745 ℃;
(5) at the InGaAs graded buffer layer In that grows
0.3Ga
0.7The As epitaxial film.
Described In
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The thickness of As resilient coating is 9～11nm.
The described GaAs substrate of step (1) cleans, and is specially:
Ultrasonic removal GaAs substrate surface pickup particle; Through trichloroethylene, acetone, methanol wash, remove surface organic matter; The GaAs substrate is placed on 60 ℃～65 ℃ H
2SO
4: H
2O
2: H
2Corroded in the O solution 2～3 minutes; Clean removal oxide on surface and organic substance through HCl; Rinsed with deionized water; GaAs substrate after the cleaning is with drying up through the drying nitrogen that filters.
The degassing processing of the described GaAs substrate of step (2) is specially:
After the cleaning of GaAs substrate is complete, send into the pre-degasification of molecular beam epitaxy Sample Room 30～40 minutes; Send into again 300～400 ℃ of degasification in transfer chamber 1.5～2 hours, send into the growth room after finishing degasification.
The described GaAs substrate surface of step (3) deoxidize is processed, and is specially:
After the GaAs substrate enters the growth room, under arsenic line protection, underlayer temperature is risen to 680 ℃～700 ℃, high-temperature baking 15～20 minutes is removed the oxidation film layer of substrate surface.
Step (5) is described at the InGaAs graded buffer layer In that grows
0.3Ga
0.7The As epitaxial film is specially:
The GaAs underlayer temperature is at 550～570 ℃, chamber pressure 4.0～4.5 * 10-
5Under pa, V/III value 60～80, the speed of growth 0.6～0.8ML/s condition, growth In
0.3Ga
0.7The As epitaxial film.
Compared with prior art, the present invention has the following advantages and beneficial effect:
(1) InGaAs graded buffer layer of the present invention comprises the In that is arranged in order from the bottom to top
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68As resilient coating, science have been controlled In component in the graded buffer layer, overcome in the early time the graded buffer layer technology In constituent content is blindly selected, and have structurally obtained optimization.
(2) InGaAs graded buffer layer of the present invention can effectively filter the dislocation that causes owing to lattice mismatch between substrate and the epitaxial loayer, and material stress is discharged, and the epitaxial material surfacing, and defect concentration is low, the In of acquisition
0.3Ga
0.7The As crystalline quality is greatly improved.
(3) the present invention in the In constituent content, controls the thickness of graded buffer layer in optimizing graded buffer layer, compares in the early time graded buffer layer technology, buffer layer thickness significantly reduces, economic benefit is obvious, and the growth time shortening, is conducive to produce and apply.
Description of drawings
Fig. 1 is the structural representation that is grown in the InGaAs film on the GaAs substrate of embodiment 1.
Fig. 2 is the In of the preparation of embodiment 1
0.3Ga
0.7The atomic force mirror microscope figure on As epitaxial film surface.
Fig. 3 is the In of the preparation of embodiment 1
0.3Ga
0.7The two swing curve figure of the X ray of As epitaxial film.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
Embodiment 1
The present embodiment is grown in the InGaAs thin film technology method on the GaAs substrate, may further comprise the steps:
(1) the GaAs substrate cleans: ultrasonic removal GaAs substrate surface pickup particle; Through trichloroethylene, acetone, methanol wash, remove surface organic matter; The GaAs substrate is placed on 60 ℃～65 ℃ H
2SO
4: H
2O
2: H
2Corrosion is 2 minutes in O (5:1:1) solution; Clean removal oxide on surface and organic substance through HCl; Rinsed with deionized water; GaAs substrate after the cleaning is with drying up through the drying nitrogen that filters.
(2) degassing processing of GaAs substrate: after the cleaning of GaAs substrate is complete, send into the pre-degasification of molecular beam epitaxy Sample Room 30 minutes; Send into again the 300 ℃ of degasification in transfer chamber 1.5 hours, send into the growth room after finishing degasification.
(3) GaAs substrate surface deoxidize is processed: after the GaAs substrate enters the growth room, under the protection of arsenic line, underlayer temperature is risen to 680 ℃ ℃, high-temperature baking 15 minutes is removed the oxidation film layer of substrate surface.
(4) at GaAs Grown InGaAs graded buffer layer: the GaAs underlayer temperature is between 550 ℃, and fixedly the temperature in Ga source and As source by changing the temperature in In source, adopts the molecular beam epitaxial growth technology, successively at GaAs Grown In
0.08Ga
0.92As resilient coating, In
0.17Ga
0.83As resilient coating, In
0.26Ga
0.74As resilient coating and In
0.32Ga
0.68The As resilient coating; In wherein grows
0.08Ga
0.92During the As resilient coating, the temperature in In source is 675 ℃; Growth In
0.17Ga
0.83During the As resilient coating, the temperature in In source is 715 ℃; Growth In
0.26Ga
0.74During the As resilient coating, the temperature in In source is 730 ℃; Growth In
0.32Ga
0.668During the As resilient coating, the temperature in In source is 740 ℃;
In
0.08Ga
0.92As resilient coating, In
0.17Ga
0.83As resilient coating, In
0.26Ga
0.74As resilient coating and In
0.32Ga
0.68The thickness of As resilient coating is 9nm.
(5) at the InGaAs graded buffer layer In that grows
0.3Ga
0.7The As epitaxial film: the GaAs underlayer temperature is at 550 ℃, chamber pressure 4.0 * 10
-5Under pa, V/III value 60, the speed of growth 0.6ML/s condition, adopt the molecular beam epitaxial growth technology, growth In
0.3Ga
0.7The As epitaxial film can be according to the actual requirement of prepared device, the In of growth respective thickness
0.3Ga
0.7The As epitaxial film.
As shown in Figure 1, the present embodiment preparation be grown in InGaAs film on the GaAs substrate, comprise the GaAs substrate 11, InGaAs graded buffer layer and the In that are arranged in order from the bottom to top
0.3Ga
0.7As epitaxial film 16; Described InGaAs graded buffer layer comprises the In that is arranged in order from the bottom to top
0.08Ga
0.92As resilient coating 12, In
0.17Ga
0.83As resilient coating 13, In
0.26Ga
0.74As resilient coating 14 and In
0.32Ga
0.68As resilient coating 15.
Fig. 2 is the In of the present embodiment preparation
0.3Ga
0.7The atomic force mirror microscope figure on As epitaxial film surface.As seen from the figure, the In of the present embodiment
0.3Ga
0.7The As epitaxial film has more smooth epitaxial surface, and surface roughness only is 0.56nm, has reached or In that the multilayer component-gradient buffer layer structure that is better than using in the early time obtains
0.3Ga
0.7The As film.
Fig. 3 is the In of the present embodiment preparation
0.3Ga
0.7The two swing curve figure of the X ray of As epitaxial film.As seen from the figure, the In of the present embodiment
0.3Ga
0.7As epitaxial film crystalline quality is high, and the half-peak breadth of using the two swing curve tests of X ray to obtain is 116 ' ', the crystalline quality of epitaxial film multi-buffering-layer technology not long ago also will be got well.
Embodiment 2
The present embodiment is grown in the InGaAs thin film technology method on the GaAs substrate, may further comprise the steps:
(1) the GaAs substrate cleans: ultrasonic removal GaAs substrate surface pickup particle; Through trichloroethylene, acetone, methanol wash, remove surface organic matter; The GaAs substrate is placed on 65 ℃ H
2SO
4: H
2O
2: H
2Corrosion is 3 minutes in O (5:1:1) solution; Clean removal oxide on surface and organic substance through HCl; Rinsed with deionized water; GaAs substrate after the cleaning is with drying up through the drying nitrogen that filters.
(2) degassing processing of GaAs substrate: the GaAs substrate clean complete after, send into the pre-degasification of molecular beam epitaxy Sample Room half an hour; Send into again the 400 ℃ of degasification in transfer chamber 2 hours, send into the growth room after finishing degasification.
(3) GaAs substrate surface deoxidize is processed: after the GaAs substrate enters the growth room, under the protection of arsenic line, underlayer temperature is risen to 700 ℃, high-temperature baking 20 minutes is removed the oxidation film layer of substrate surface.
(4) at GaAs Grown InGaAs graded buffer layer: the GaAs underlayer temperature is between 570 ℃, and fixedly the temperature in Ga source and As source by changing the temperature in In source, adopts the molecular beam epitaxial growth technology, successively at GaAs Grown In
0.10Ga
0.90As resilient coating, In
0.19Ga
0.81As resilient coating, In
0.28Ga
0.72As resilient coating and In
0.34Ga
0.66The As resilient coating; In wherein grows
0.10Ga
0.90During the As resilient coating, the temperature in In source is 680 ℃; Growth In
0.19Ga
0.81During the As resilient coating, the temperature in In source is 720 ℃; Growth In
0.28Ga
0.72During the As resilient coating, the temperature in In source is 735 ℃; Growth In
0.34Ga
0.66During the As resilient coating, the temperature in In source is 745 ℃;
In
.10Ga
0.90As resilient coating, In
0.19Ga
0.81As resilient coating, In
0.28Ga
0.72As resilient coating and In
0.34Ga
0.66The thickness of As resilient coating is 11nm.
(5) at the InGaAs graded buffer layer In that grows
0.3Ga
0.7The As epitaxial film: the GaAs underlayer temperature is at 570 ℃, chamber pressure 4.5 * 10-
5Under pa, V/III value 80, the speed of growth 0.8ML/s condition, adopt the molecular beam epitaxial growth technology, growth In
0.3Ga
0.7The As epitaxial film can be according to the actual requirement of prepared device, the In of growth respective thickness
0.3Ga
0.7The As epitaxial film.
The test result that is grown in the InGaAs film on the GaAs substrate of the present embodiment is similar to Example 1, does not repeat them here.
Above-described embodiment is the better execution mode of the present invention; but embodiments of the present invention are not limited by the examples; other any do not deviate from change, the modification done under Spirit Essence of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (8)
1. be grown in the InGaAs film on the GaAs substrate, it is characterized in that, comprise the GaAs substrate, InGaAs graded buffer layer and the In that are arranged in order from the bottom to top
0.3Ga
0.7The As epitaxial film; Described InGaAs graded buffer layer comprises the In that is arranged in order from the bottom to top
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The As resilient coating.
2. the InGaAs film that is grown on the GaAs substrate according to claim 1 is characterized in that described In
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The thickness of As resilient coating is 9～11nm.
3. be grown in the InGaAs thin film technology method on the GaAs substrate, it is characterized in that, may further comprise the steps:
(1) the GaAs substrate cleans;
(2) degassing processing of GaAs substrate;
(3) GaAs substrate surface deoxidize is processed;
(4) at GaAs Grown InGaAs graded buffer layer: the GaAs underlayer temperature is between 550～570 ℃, and the fixing temperature in Ga source and As source is by changing the temperature in In source, successively at GaAs Grown In
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The As resilient coating; In wherein grows
0.08～0.10Ga
0.90～0.92During the As resilient coating, the temperature in In source is 675～680 ℃; Growth In
0.17～0.19Ga
0.81～0.83During the As resilient coating, the temperature in In source is 715～720 ℃; Growth In
0.26～0.28Ga
0.72～0.74During the As resilient coating, the temperature in In source is 730～735 ℃; Growth In
0.32～0.34Ga
0.66～0.68During the As resilient coating, the temperature in In source is 740～745 ℃;
(5) at the InGaAs graded buffer layer In that grows
0.3Ga
0.7The As epitaxial film.
4. the described InGaAs thin film technology method that is grown on the GaAs substrate of claim 3 is characterized in that described In
0.08～0.10Ga
0.90～0.92As resilient coating, In
0.17～0.19Ga
0.81～0.83As resilient coating, In
0.26～0.28Ga
0.72～0.74As resilient coating and In
0.32～0.34Ga
0.66～0.68The thickness of As resilient coating is 9～11nm.
5. the described InGaAs thin film technology method that is grown on the GaAs substrate of claim 3 is characterized in that, the described GaAs substrate of step (1) cleans, and is specially:
Ultrasonic removal GaAs substrate surface pickup particle; Through trichloroethylene, acetone, methanol wash, remove surface organic matter; The GaAs substrate is placed on 60 ℃～65 ℃ H
2SO
4: H
2O
2: H
2Corroded in the O solution 2～3 minutes; Clean removal oxide on surface and organic substance through HCl; Rinsed with deionized water; GaAs substrate after the cleaning is with drying up through the drying nitrogen that filters.
6. the described InGaAs thin film technology method that is grown on the GaAs substrate of claim 3 is characterized in that, the degassing processing of the described GaAs substrate of step (2) is specially:
After the cleaning of GaAs substrate is complete, send into the pre-degasification of molecular beam epitaxy Sample Room 30～40 minutes; Send into again 300～400 ℃ of degasification in transfer chamber 1.5～2 hours, send into the growth room after finishing degasification.
7. the described InGaAs thin film technology method that is grown on the GaAs substrate of claim 3 is characterized in that, the described GaAs substrate surface of step (3) deoxidize is processed, and is specially:
After the GaAs substrate enters the growth room, under arsenic line protection, underlayer temperature is risen to 680 ℃～700 ℃, high-temperature baking 15～20 minutes is removed the oxidation film layer of substrate surface.
8. the described InGaAs thin film technology method that is grown on the GaAs substrate of claim 3 is characterized in that, step (5) is described at the InGaAs graded buffer layer In that grows
0.3Ga
0.7The As epitaxial film is specially:
The GaAs underlayer temperature is at 550～570 ℃, chamber pressure 4.0～4.5 * 10
-5Under pa, V/III value 60～80, the speed of growth 0.6～0.8ML/s condition, growth In
0.3Ga
0.7The As epitaxial film.
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| CN103762256A (en) * | 2014-01-15 | 2014-04-30 | 华南理工大学 | InGaAs film grown on Si substrate and preparation method thereof |
| CN103943700A (en) * | 2014-04-18 | 2014-07-23 | 华南理工大学 | InGaAsN thin film grown on GaAs substrate and manufacturing method of InGaAsN thin film |
| CN104241409A (en) * | 2014-08-25 | 2014-12-24 | 华南理工大学 | Method for growth of GaInNAs thin film on GaAs substrate |
| CN104465725A (en) * | 2014-11-24 | 2015-03-25 | 华南理工大学 | In0.3Ga0.7As thin film growing on Si substrate and preparing method |
| CN104835718A (en) * | 2015-03-23 | 2015-08-12 | 华南理工大学 | GaAs thin film growing on Si substrate and method for preparing same |
| CN105140104A (en) * | 2015-07-31 | 2015-12-09 | 华南理工大学 | GaAs thin film grown on Si substrate and preparation method |
| TWI832551B (en) * | 2022-11-11 | 2024-02-11 | 聯亞光電工業股份有限公司 | Light detection element |
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| CN103762256A (en) * | 2014-01-15 | 2014-04-30 | 华南理工大学 | InGaAs film grown on Si substrate and preparation method thereof |
| CN103762256B (en) * | 2014-01-15 | 2016-03-02 | 华南理工大学 | Growth InGaAs film on a si substrate and preparation method thereof |
| CN103943700A (en) * | 2014-04-18 | 2014-07-23 | 华南理工大学 | InGaAsN thin film grown on GaAs substrate and manufacturing method of InGaAsN thin film |
| CN103943700B (en) * | 2014-04-18 | 2016-08-17 | 华南理工大学 | A kind of growth InGaAsN thin film on gaas substrates and preparation method thereof |
| CN104241409A (en) * | 2014-08-25 | 2014-12-24 | 华南理工大学 | Method for growth of GaInNAs thin film on GaAs substrate |
| CN104465725A (en) * | 2014-11-24 | 2015-03-25 | 华南理工大学 | In0.3Ga0.7As thin film growing on Si substrate and preparing method |
| CN104835718A (en) * | 2015-03-23 | 2015-08-12 | 华南理工大学 | GaAs thin film growing on Si substrate and method for preparing same |
| CN104835718B (en) * | 2015-03-23 | 2017-12-01 | 华南理工大学 | The GaAs films of growth on a si substrate and preparation method thereof |
| CN105140104A (en) * | 2015-07-31 | 2015-12-09 | 华南理工大学 | GaAs thin film grown on Si substrate and preparation method |
| CN105140104B (en) * | 2015-07-31 | 2017-11-07 | 华南理工大学 | Grow GaAs films on a si substrate and preparation method |
| TWI832551B (en) * | 2022-11-11 | 2024-02-11 | 聯亞光電工業股份有限公司 | Light detection element |
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