CN105405928B - Preparation method for four-junction solar cell based on GaInNAs material - Google Patents
Preparation method for four-junction solar cell based on GaInNAs material Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 8
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 20
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 16
- 229910000077 silane Inorganic materials 0.000 claims description 16
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 12
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 12
- 230000004907 flux Effects 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 229910000070 arsenic hydride Inorganic materials 0.000 claims description 8
- 230000026267 regulation of growth Effects 0.000 claims description 7
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000031068 symbiosis, encompassing mutualism through parasitism Effects 0.000 claims description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method for a four-junction solar cell based on a GaInNAs material, comprising the steps of treating a substrate, growing by MOCVD and adding a superlattice buffer layer. Compared with the existing four-junction solar cell preparation method, the preparation method provided by the invention adopts the superlattice buffer layer, the high-quality GaInNAs material can be prepared in the MOCVD, and thereby the prepared four-junction solar cell is high in crystalline quality, thus achieving higher overall efficiency. In addition, compared with the MBE method, the MOCVD method has a lower cost, and can lay a foundation for the industrial production of the four-junction cells.
Description
Technical field
The present invention relates to many knot stacking efficient solar battery fields, it is more particularly to a kind of based on GaInNAs materials four
The preparation method of connection solar cell.
Background technology
With developing rapidly for solar energy power generating industry and market, and in spacecraft energy resource system demand
Under traction, photovoltaic technology constantly obtains important breakthrough.Efficient solar battery production technology based on III-V semiconductor compound
Reach its maturity so as to have broad application prospects in space engineering and ground photovoltaic.Solar spectrum frequency range is very wide, the sun
Battery obsorbing layer meeting energy absorption is converted into photo-generated carrier more than the photon of absorbed layer material bandwidth, produces voltage.For
The higher material of bandwidth, as the spectrum ratio which absorbs is less, therefore the electric current for producing is less, and photovoltage is higher；It is right
In the relatively low material of bandwidth, due to the large percentage of its absorption spectrum, therefore the electric current for producing is larger, and photovoltage is relatively low.
So in practice, the material of solar cell would generally be selected according to the demand in application.It is even if being the bandwidth of optimization, single
The photoelectric transformation efficiency of junction battery is also extremely limited.
In order to preferably utilize solar spectrum, the sub- battery of two or more pn-junctions is cascaded by tunnel junctions, is formed
Layer-built battery.Each straton battery absorbs the sunlight of different-waveband respectively, produces corresponding photogenerated current and photovoltage, electricity
The total voltage in pond is each sub- battery photovoltage sum, and total current is the minima of each sub- battery photogenerated current.Current technology is sent out
The more ripe InGaP/GaAs/Ge three-junction solar batteries of exhibition, its peak efficiency already exceed 40%.Ge knots electricity in the structure
The spectral region that pond can absorb is more than the sub- battery of another two, and the photogenerated current of generation is also greater than other two sub- batteries.But by
Series relationship between each sub- battery, output current are limited by sub- battery minimum current, the electricity that Ge knots battery is produced
Stream all can not be exported with electrical energy form, cause waste.
In order to reduce such waste, need to increase by a straton battery further to split spectrum.Can through calculating
Know, GaInNAs is a kind of material for being suitable as the straton battery, its energy gap is about 1.0eV, can absorb 873-
The spectrum of 1240nm wave bands.Four junction batteries being consequently formed can be reduced because Ge knot batteries photogenerated current is superfluous and caused wave
Take.Additionally, the lattice paprmeter of GaInNAs is matched with GaAs systems, the few crystalline substance of the high defect of crystal mass can be ideally formed
Body layer.
Although there is good prospect based on the four-junction solar battery of GaInNAs, synthesize high-quality GaInNAs brilliant
Body layer is the difficult point for making the system battery.The GaInNAs defects for synthesizing under normal circumstances are more, so as to cause few sub- diffusion long
Degree is short, and sub- cell output voltage is less than theoretical value, and integral battery door efficiency is not obviously improved.In order to improve crystal mass, drop
Low-defect-density, forefathers have made many effort --- such as high annealing, thicken depletion layer etc. --- to improve GaInNAs's
Performance.However, wanting to reach the energy gap of 1.0eV or so, needs are incorporated to the N atoms of 2.5%-3.0% in GaAs, can make
Into the drastically decline of crystal mass, it is impossible to obtain the less GaInNAs crystal layers of defect.
The content of the invention
The technical problem to be solved is to provide a kind of system of the four-junction solar battery based on GaInNAs materials
The sub- battery material crystal mass of Preparation Method, wherein GaInNAs is good, and depletion layer area is big, and GaAs system Lattice Matchings, and band gap exists
Between 1.0eV-1.1eV, and full spectrum is reasonably utilized together with other three sub- batteries, carried the whole efficiency of battery
Rise.
In order to solve above-mentioned technical problem, the technical solution used in the present invention is：A kind of four knots based on GaInNAs materials
The preparation method of solaode, comprises the following steps：
(1) provide a p-type Ge substrate, crystal orientation be [001], 160 μm of thickness；
(2) arsine used in MOCVD forms pn-junction as the first son electricity as arsenic source in Ge substrate surfaces doping As
Pond, its band gap are 0.6-0.7eV；
(3) highly doped AlGaAs is grown as the first tunnel junctions on the first knot battery, its thickness is 30-80nm；
(4) GaInNAs/GaInAs superlattice layers are grown in the first tunnel junctions, in each cycle, GaInNAs thickness is 3-
5nm, GaInAs thickness is 5-7nm, totally 10 cycles；
(5) GaInNAs pn-junctions are prepared as the second sub- battery on superlattice layer, its band gap is 1.0-1.1eV, TMGa,
, respectively as III-V component sources, DEZn, silane are used as doped source for arsine, TMIn, TBHy；
(6) highly doped AlGaAs is grown as the second tunnel junctions on the second knot battery, its thickness is 30-80nm；
(7) the three sub- battery of growth regulation in the second tunnel junctions, its band gap be 1.4-1.5eV, TMGa, arsine respectively as
III-V component sources, TMIn, DEZn, silane are used as doped source；
(8) highly doped AlGaAs is grown as the second tunnel junctions on the 3rd knot battery, its thickness is 30-80nm；
(9) the four sub- battery of growth regulation in the 3rd tunnel junctions, its band gap are 1.8-2.0eV, and TMGa, phosphine, TMIn distinguish
Used as III-V component sources, DEZn, silane are used as doped source；
(10) grow cap on the 4th sub- battery, respectively as III-V component sources, silane is used as mixing for TMGa, arsine
Miscellaneous source.
The invention has the beneficial effects as follows：
(1) present invention devises the four-junction solar battery based on GaInNAs materials, on the basis of existing three-junction solar battery
On add the sub- batteries of GaInNAs, optimize the utilization to solar spectrum, make originally because Ge knot photogenerated currents it is superfluous caused by wave
Expense becomes exportable electric current；Determine MOCVD methods selected parameter when this kind of battery is prepared simultaneously, can be in growth room
Interior original position completes whole growth courses of battery.Compared to the method that MOCVD and MBE combine, The method reduces substrate turns
The process of shifting, simplifies technological process, reduces the probability that battery is contaminated.
(2) the present invention relates to method in Ge Growns based on GaInNAs material four-junction solar batteries, first serves as a contrast in Ge
Adulterate on bottom As, then grows each sub- battery and tunnel junctions successively.Wherein, first grew before the sub- batteries of GaInNAs are prepared
GaInNAs/GaInAs superlattice layers, then grow GaInNAs extension layer films.Add the bootable N atoms of structure of superlattices
Be incorporated to, promotion form quaternary compound, process stabilizing, favorable repeatability.Additionally, GaInNAs/GaInAs superlattices gradual changes
Layer is crossed, lattice stabilities of the GaInNAs in integral system is enhanced.
(3) the four knot sun electricity based on GaInNAs materials can be obtained by mocvd method using preparation method of the present invention
The sub- battery in pond, wherein GaInNAs and other three knots battery lattice constant match, band gap are about 1.0eV, and with higher crystalline substance
Weight.The method, compared to previously reported MBE preparation methoies, with the potentiality produced in enormous quantities, can be four knots or more
The industrialization of connection solar cell lays the foundation.
Description of the drawings
Fig. 1 is absorbing state figure of tri- junction batteries of existing GaInP/GaAs/Ge to solar spectrum；
Fig. 2 is to add band gap for absorbing state figure of each sub- battery to solar spectrum after the sub- battery of 1.0eV；
Fig. 3 is the structural representation using the four-junction solar battery prepared by the preparation method in the present invention.
In figure：
101 is cap；
102 the 4th sub- batteries, band gap is 1.8-2.0eV；
103 the 3rd tunnel junctions；
104 the 3rd sub- batteries, band gap is 1.4-1.5eV；
105 second tunnel junctions；
106 second sub- batteries, band gap is 1.0-1.1eV；
107 superlattices graded buffer layers；
108 first tunnel junctions；
109n-Ge launch sites；
110p-Ge bases；
111Ge substrates.
Specific embodiment
For the content of the invention, feature and effect of the present invention can be further appreciated that, following examples are hereby enumerated, but the present invention
Embodiment not limited to this, describe in detail as follows：
The present embodiment is the preparation method of the four-junction solar battery based on GaInNAs materials, is comprised the following steps：
(1) provide a p-type Ge substrate；
Using the p-Ge substrates of [001] crystal orientation, its doping content about 2 × 1017-5×1017cm-3；Ultrasound removes GaAs
Substrate surface pickup granule；Jing acetone, washing with alcohol, remove surface organic matter；By the volume ratio that Ge substrates are placed on 40-70 DEG C it is
HF:H2O2:H2O(1:8:1) corrode 1-2 minutes in mixed solution, remove oxide on surface and Organic substance；Deionized water is rinsed；
Ge substrates after cleaning are dried up through the drying nitrogen for filtering.GaAs substrates after cleaning is finished send into high-temperature vacuum room,
1-2 hours are toasted at 280-350 DEG C, the gas and fluid molecule of absorption is removed, after completing degasification, is sent into mocvd growth chamber；
(2) in Ge substrate surfaces doping As, form the first sub- battery；
Ge underlayer temperatures be 520-650 DEG C, be passed through arsine flow for 700-850sccm as As sources, chamber pressure 60-
As atoms permeatings are entered Ge substrates by 80Torr, prepare the N-shaped Ge layers that diffusion thickness is about 100-250nm, form pn-junction conduct
First sub- battery.
(3) the first tunnel junctions are grown on the first knot battery：
In mocvd growth chamber, heavily doped p++/n++-AlGaAs tunnel junctions are grown above the first sub- battery.Substrate
Temperature 530-620 DEG C, TMGa flows are 15-35sccm, and TMAl flows are 5-15sccm, AsH3Flow is 450-600sccm, its
Thickness is 30-80nm, and doping content is up to 1019cm-3Magnitude.
(4) the growth GaInNAs/GaInAs superlattice layers in the first tunnel junctions：
Underlayer temperature be 570-650 DEG C, TMGa flows be 15-40sccm, arsine flow be 450-600sccm, TMIn sources
Flow is 5-10sccm, and GaInAs growth thickness is 5-7nm；TBHy flows are 5-15sccm, and TMIn source fluxs are 5-15sccm,
TMGa flows are 20-35sccm, and arsine flow is 450-600sccm, and GaInNAs growth thickness is 3-5nm.The cycle is repeated
Property growth, 10 cycles of symbiosis length, the process conditions of each cycle are consistent.
(5) GaInNAs pn-junctions are prepared as the second sub- battery on superlattice layer：
Underlayer temperature be 530-620 DEG C, TMGa flows be 20-35sccm, arsine flow be 450-600sccm, TMIn sources
Flow is 5-15sccm, and TBHy flows are 5-15sccm, and DEZn flows are 5-8sccm, chamber pressure 70-80Torr, are grown
Thickness is 200-250nm, forms p-type base.Next, TMGa flows are 20-35sccm, arsine flow is 450-600sccm,
TMIn source fluxs are 10-15sccm, and TBHy flows are 10-15sccm, and silane flow rate is 5-8sccm, and growth thickness is 15-
30nm, as N-shaped launch site.
(6) the second tunnel junctions are grown on the second knot battery：
Heavily doped p++/n++-AlGaAs tunnel junctions are grown above the second sub- battery.570-650 DEG C of underlayer temperature,
TMGa flows are 20-35sccm, and TMAl flows are 5-15sccm, AsH3Flow is 550-650sccm, and its thickness is 50-80nm,
Doping content is up to 1019cm-3Magnitude.
(7) the three sub- battery of growth regulation in the second tunnel junctions：
Underlayer temperature be 580-650 DEG C, TMGa flows be 25-40sccm, arsine flow be 500-650sccm, TMIn sources
Flow is 5-15sccm, and DEZn flows are 5-8sccm, and chamber pressure 60-90Torr, growth thickness are 180-300nm, are formed
P-type base.Next underlayer temperature is kept to be 580-660 DEG C, TMGa flows are 25-40sccm, and arsine flow is 500-
650sccm, TMIn source flux is 5-15sccm, and silane flow rate is 5-8sccm, and growth thickness is 10-20nm, is launched as N-shaped
Area.
(8) three tunnel junctions of growth regulation on the 3rd sub- battery：
Heavily doped p++/n++-AlGaAs tunnel junctions are grown above the 3rd sub- battery.580-660 DEG C of underlayer temperature,
TMGa flows are 25-40sccm, and TMAl flows are 5-15sccm, AsH3Flow is 500-700sccm, and its thickness is 50-80nm.
(9) the four sub- battery of growth regulation in the 3rd tunnel junctions：
Underlayer temperature be 580-650 DEG C, TMGa flows be 25-40sccm, phosphine flow be 750-900sccm, TMIn sources
Flow is 15-25sccm, and DEZn flows are 5-8sccm, chamber pressure 60-90Torr, and growth thickness is 550-750nm, shape
Into p-type base.Next, TMGa flows are 25-40sccm, phosphine flow is 750-900sccm, and TMIn source fluxs are 15-
25sccm, silane flow rate are 5-10sccm, and growth thickness is 100-200nm, used as N-shaped launch site.
(10) cap is grown on the 4th sub- battery.
Heavily doped n+-GaAs cap is grown above the 4th sub- battery.570-650 DEG C of underlayer temperature, TMGa flows
For 25-40sccm, AsH3Flow is 500-650sccm, and silane flow rate is 5-10sccm, and its thickness is 100-200nm.
All processes in the present invention are grown in MOCVD, add superlattices graded buffer layer to make crystal mass significantly
Improve.Above-described embodiment is the one of which embodiment of the present invention, but embodiments of the present invention do not receive the embodiment
Restriction, other any spirit without departing from the present invention and the change, modification, replacement made under principle, combine, it is simple
Change, should be equivalent substitute mode, be included within protection scope of the present invention.
Claims (10)
1. a kind of preparation method of the four-junction solar cell based on GaInNAs materials, it is characterised in that comprise the following steps：
(1) provide a p-type Ge substrate, crystal orientation be [001], 160 μm of thickness；
(2) arsine used in MOCVD forms pn-junction as the first sub- battery as arsenic source in Ge substrate surfaces doping As, its
Band gap is 0.6-0.7eV；
(3) highly doped AlGaAs is grown as the first tunnel junctions on the first knot battery, its thickness is 30-80nm；
(4) GaInNAs/GaInAs superlattice layers are grown in the first tunnel junctions, in each cycle, GaInNAs thickness is 3-5nm,
GaInAs thickness is 5-7nm, totally 10 cycles；
(5) GaInNAspn knots are prepared as the second sub- battery on superlattice layer, its band gap is 1.0-1.1eV, TMGa, arsenic
, respectively as III-V component sources, DEZn, silane are used as doped source for alkane, TMIn, TBHy；
(6) highly doped AlGaAs is grown as the second tunnel junctions on the second knot battery, its thickness is 30-80nm；
(7) the three sub- battery of growth regulation in the second tunnel junctions, its band gap are 1.4-1.5eV, and TMGa, arsine are respectively as III-
V component sources, TMIn, DEZn, silane are used as doped source；
(8) highly doped AlGaAs is grown as the 3rd tunnel junctions on the 3rd knot battery, its thickness is 30-80nm；
(9) the four sub- battery of growth regulation in the 3rd tunnel junctions, its band gap be 1.8-2.0eV, TMGa, phosphine, TMIn respectively as
III-V component sources, DEZn, silane are used as doped source；
(10) cap is grown on the 4th sub- battery, TMGa, arsine are respectively as iii-v elemental constituent source, silane conduct
Doped source.
2. the preparation method of the four-junction solar cell based on GaInNAs materials according to claim 1, its feature exist
In in the step (2), Ge underlayer temperatures are 520-650 DEG C, and to be passed through arsine flow be 700-850sccm used as As sources, instead
Chamber pressure 60-80Torr is answered, As atoms permeatings is entered into Ge substrates, prepare the N-shaped Ge layers that diffusion thickness is 100-250nm,
Pn-junction is formed as the first sub- battery.
3. the preparation method of the four-junction solar cell based on GaInNAs materials according to claim 1, its feature exist
In, in the step (3) in mocvd growth chamber, growing heavily doped p++/n++-AlGaAs tunnels above the first sub- battery
Knot, 530-620 DEG C of underlayer temperature are worn, TMGa flows are 15-35sccm, and TMAl flows are 5-15sccm, AsH3Flow is
450-600sccm, its thickness is 30-80nm, and doping content is up to 1019cm- 3Magnitude.
4. the preparation method of the four-junction solar cell based on GaInNAs materials according to claim 1, its feature exist
In in the step (4), underlayer temperature is 570-650 DEG C, and TMGa flows are 15-40sccm, and arsine flow is 450-
600sccm, TMIn source flux is 5-10sccm, and GaInAs growth thickness is 5-7nm；TBHy flows are 5-15sccm, TMIn
Source flux is 5-15sccm, and TMGa flows are 20-35sccm, and arsine flow is 450-600sccm, GaInNAs growth thickness
For 3-5nm, cyclical growth is repeated, in 10 cycles of symbiosis length, the process conditions of each cycle are consistent.
5. the preparation method of the four-junction solar cell based on GaInNAs materials according to claim 1, its feature exist
In in the step (5), underlayer temperature is 530-620 DEG C, and TMGa flows are 20-35sccm, and arsine flow is 450-
600sccm, TMIn source flux is 5-15sccm, and TBHy flows are 5-15sccm, and DEZn flows are 5-8sccm, react chamber pressure
Power 70-80Torr, growth thickness are 200-250nm, form p-type base；Next, TMGa flows are 20-35sccm, arsenic
Alkane flow is 450-600sccm, and TMIn source fluxs are 10-15sccm, and TBHy flows are 10-15sccm, and silane flow rate is
5-8sccm, growth thickness are 15-30nm, used as N-shaped launch site.
6. the preparation method of the four-junction solar cell based on GaInNAs materials according to claim 1, its feature exist
In, in the step (6), growing heavily doped p++/n++-AlGaAs tunnel junctions, underlayer temperature above the second sub- battery
570-650 DEG C, TMGa flows are 20-35sccm, and TMAl flows are 5-15sccm, AsH3Flow is 550-650sccm, its
Thickness is 50-80nm, and doping content is up to 1019cm- 3Magnitude.
7. the preparation method of the four-junction solar cell based on GaInNAs materials according to claim 1, its feature exist
In in the step (7), underlayer temperature is 580-650 DEG C, and TMGa flows are 25-40sccm, and arsine flow is 500-
650sccm, TMIn source flux is 5-15sccm, and DEZn flows are 5-8sccm, chamber pressure 60-90Torr, are grown thick
Spend for 180-300nm, formation p-type base；Next underlayer temperature is kept to be 580-660 DEG C, TMGa flows are 25-
40sccm, arsine flow are 500-650sccm, and TMIn source fluxs are 5-15sccm, and silane flow rate is 5-8sccm, and growth is thick
Spend for 10-20nm, as N-shaped launch site.
8. the preparation method of the four-junction solar cell based on GaInNAs materials according to claim 1, its feature exist
In, in the step (8), growing heavily doped p++/n++-AlGaAs tunnel junctions, underlayer temperature above the 3rd sub- battery
580-660 DEG C, TMGa flows are 25-40sccm, and TMAl flows are 5-15sccm, AsH3Flow is 500-700sccm, its
Thickness is 50-80nm.
9. the preparation method of the four-junction solar cell based on GaInNAs materials according to claim 1, its feature exist
In in the step (9), underlayer temperature is 580-650 DEG C, and TMGa flows are 25-40sccm, and phosphine flow is 750-
900sccm, TMIn source flux is 15-25sccm, and DEZn flows are 5-8sccm, chamber pressure 60-90Torr, are grown thick
Spend for 550-750nm, formation p-type base；Next, TMGa flows are 25-40sccm, phosphine flow is 750-
900sccm, TMIn source flux is 15-25sccm, and silane flow rate is 5-10sccm, and growth thickness is 100-200nm, used as n
Type launch site.
10. the preparation method of the four-junction solar cell based on GaInNAs materials according to claim 1, its feature exist
In, in the step (10), heavily doped n+-GaAs cap, underlayer temperature 570-650 being grown above the 4th sub- battery
DEG C, TMGa flows are 25-40sccm, AsH3Flow is 500-650sccm, and silane flow rate is 5-10sccm, and its thickness is
100-200nm.
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| CN104134716A (en) * | 2014-08-13 | 2014-11-05 | 天津三安光电有限公司 | Four-junction solar cell |
| CN104465843A (en) * | 2014-11-28 | 2015-03-25 | 瑞德兴阳新能源技术有限公司 | Double-sided growth GaAs four-junction solar cell |
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| CN104134716A (en) * | 2014-08-13 | 2014-11-05 | 天津三安光电有限公司 | Four-junction solar cell |
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