CN103943518A - 用于制造牢固接合的连接和电气连接的方法 - Google Patents

用于制造牢固接合的连接和电气连接的方法 Download PDF

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CN103943518A
CN103943518A CN201410026183.4A CN201410026183A CN103943518A CN 103943518 A CN103943518 A CN 103943518A CN 201410026183 A CN201410026183 A CN 201410026183A CN 103943518 A CN103943518 A CN 103943518A
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protected
protective layer
partner
joint
surperficial fragment
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CN103943518B (zh
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L.伯维
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Infineon Technologies AG
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Infineon Technologies AG
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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Abstract

用于制造牢固接合的连接和电气连接的方法。为了在第一接合伙伴（1）和第二接合伙伴（2）之间制造牢固接合的连接，首先提供第一接合伙伴（1）和第二接合伙伴（2）。第一接合伙伴（1）具有第一连接面（11）以及与第一连接面（11）不同的、待保护的表面片段（12）。第二接合伙伴（2）具有第二连接面（21）。在待保护的表面片段（12）上施加保护层（3），使得待保护的表面片段（12）完全被所述保护层（3）覆盖。在将保护层（3）施加在待保护的表面片段（12）上的状态下，在第一连接面（11）与第二连接面（21）之间制造出牢固接合的连接。在制造了牢固接合的连接之后，又将保护层（3）从所述待保护的表面片段（12）至少部分地去除。

Description

用于制造牢固接合的连接和电气连接的方法
技术领域
本发明涉及用于制造牢固接合的连接和电气连接的方法。在两个接合伙伴之间制造牢固接合的连接的情况下，通常会发生由于该接合工艺而导致对接合位置的环境的污染。这种污染可能负面干扰例如电气连接的制造的其它工艺步骤。例如，为了通过低温压力烧结制造牢固接合的连接，采用尤其是包含金属粉末和溶剂的膏体作为连接介质。在该烧结过程期间从该膏体中例如逸出脂肪酸，所述脂肪酸会负面影响环境。这种污染的另一个例子是在制造牢固接合的焊接连接时被无意喷溅的焊剂。 
发明内容
本发明的任务在于提供一种用于制造牢固接合的连接的方法，利用所述方法可以在利用通过牢固接合的连接产生的复合物制造电气连接时避免开头所述的问题或者至少使开头所述的问题不太突出。本发明的另一个任务在于提供一种用于制造电气连接的方法，利用该方法可以避免开头所述的问题或至少使开头所述的问题不太突出。这些任务通过一种根据权利要求1所述的用于制造牢固接合的连接的方法以及通过一种根据权利要求15所述的用于制造电气连接的方法解决。本发明的构型和扩展是从属权利要求的主题。 
本发明的第一方面涉及一种用于在第一接合伙伴和第二接合伙伴之间制造牢固接合的连接的方法。为此提供具有第一连接面以及与第一连接面不同的、待保护的表面片段的第一接合伙伴。此外提供具有第二连接面的第二接合伙伴。在所述待保护的表面片段上施加保护层，使得待保护的表面片段完全被所述保护层覆盖。在将保护层施加在所述待保护的表面片段上的状态下，在第一连接面与第二连接面之间制造出牢固接合的连接。在制造了牢固接合的连接之后，又将保护层从所述待保护的表面片段至少部分地去除。 
根据另一方面，通过以下方式制造电气连接，即在制造了牢固接合的连接之后在所述待保护的表面片段与导电的连接端元件之间产生导电连接，并且是在将保护层从所述待保护的表面片段至少部分地去除之后。 
附图说明
下面参照附图借助实施例阐述本发明。图中的图示不是按比例的。 
图1A至1H和1J至1M示出用于在两个接合伙伴之间制造牢固接合的连接的方法。 
图2示出用于在导电的连接端元件与借助图1A至1M阐述的待保护的表面片段之间制造电气连接的方法，其中该连接端元件直接接触待保护的表面片段。 
图3示出用于在使用附加的连接介质的情况下在导电的连接端元件与借助图1A至1M阐述的待保护的表面片段之间制造电气连接的方法。 
图4A至4F示出另一种用于在两个接合伙伴之间制造牢固接合的连接的方法。 
图5示出用于在导电的连接端元件与借助图4A至4F阐述的待保护的表面片段之间制造电气连接的方法，其中该连接端元件直接接触待保护的表面片段。 
图6示出用于在使用附加的连接介质的情况下在导电的连接端元件与借助图4A至4F阐述的待保护的表面片段之间制造电气连接的方法。 
图7A至7E示出又一种用于在两个接合伙伴之间制造牢固接合的连接的方法。 
图8示出用于在导电的连接端元件与借助图7A至7E阐述的待保护的表面片段之间制造电气连接的方法，其中该连接端元件直接接触待保护的表面片段。 
图9示出用于在使用附加的连接介质的情况下在导电的连接端元件与借助图7A至7E阐述的待保护的表面片段之间制造电气连接的方法。 
图10示出一种方法的子步骤，在该子步骤中在制造了牢固接合的连接之后借助激光射线将保护层从待保护的表面片段去除。 
具体实施方式
在图中相同的附图标记表示具有相同功能的相同元件。只要没有另外阐述，在不同的图中示出的元件、特征、方法和方法步骤都可以按照任意方式相互组合，只要这些元件、特征、方法和方法步骤没有相互排除。 
图1A示出第一接合伙伴1。该第一接合伙伴具有第一连接面11以及待保护的表面片段12。在所示出的例子中，第一接合伙伴1被构造为用于电气器件的载体衬底6。该载体衬底6包括电气绝缘的绝缘载体60，例如陶瓷，在该绝缘载体的上侧施加了上金属化部61，该上金属化部可选地可以被结构化，使得该上金属化部具有相互有间隔的金属化片段611，612。在所示出的例子中，第一连接面11通过上侧金属化层61的第一金属化片段611提供，而待保护的表面片段12通过上侧金属化层61的第二金属化片段612提供。可选地，绝缘载体60还在其背向上侧金属化层61的侧上配备有下侧金属化层62。上侧金属化层61和/或——只要设置了——下侧金属化层62例如可以由铜、铜合金、铝、铝合金组成，但是也可以由任意其它金属组成。例如，衬底6可以是DCB衬底（direct copper bonding，直接铜接合）、DAB衬底（direct aluminum bonding，直接铝接合）或者AMB衬底（active metal brazing，活性金属钎焊）。 
在提供图1A中所示的衬底6之后，在该衬底上施加保护层3，并且按照以下方式，即至少待保护的表面片段12完全被保护层3覆盖。在所示的例子中，稍后应当在待保护的表面片段12与导电的连接端元件之间制造导电连接。 
第一连接面11用于制造与第二接合伙伴的第二连接面的牢固接合的连接。如果如在根据图1B的例子中所示第一连接面11被保护层3覆盖，则必须在制造牢固接合的连接之前又将该保护层3从第一连接面11去除，这在下面示例性地借助图1C至1G来阐述。为此原则上可以采用极其不同的方法。重要的是，在任何情况下都要将保护层3从第一连接面11去除，而保护层3保留在待保护的表面片段12上，从而待保护的表面片段12在随后制造第一接触面1与第二接合伙伴的第二接触面之间的牢固接合的连接期间保持由保护层3来加以保护。 
在当前的例子中，根据图1C在保护层3上施加例如由正性光致抗蚀剂制成的光致抗蚀层81，并且随后借助光9选择性地对光致抗蚀层81曝光，这在图1D中示出。在此情况下重要的是，在该选择性的曝光情况下至少对光致抗蚀层81的位于待保护的表面片段12上的部分进行曝光，但是不对光致抗蚀层81的位于第一连接面11上的片段进行曝光。 
代替正性光致抗蚀剂，也可以使用负性光致抗蚀剂。在这种情况下必须至少对保护层3的位于第一连接面11上的片段进行曝光，而不对保护层3的位于待保护的表面片段12上的片段进行曝光。 
在正性光致抗蚀剂的情况下，随后去除光致抗蚀层81的未被曝光的片段，在负性光致抗蚀剂的情况下去除已被曝光的片段。在任何情况下该去除都可以通过湿化学或干化学蚀刻来进行。该蚀刻可以选择性地相对于保护层3来进行，使得光致抗蚀层81在该蚀刻过程之后是经结构化的掩模，该掩模在第一连接面11的区域中具有开口，如结果在图1E中所示的。经结构化的掩模层81于是可以被用作针对随后其它蚀刻工艺的掩模，在该随后其它蚀刻工艺中去除保护层3的位于第一连接面11上的片段，如结果在图1F中所示的。替换地，为此可以在共同的湿蚀刻步骤或干蚀刻步骤中将光致抗蚀层81的位于第一连接面11上的片段去除并且将保护层3的位于第一连接面上的片段去除，这结果又导致图1F中所示的布置。 
在选择性地将保护层3从第一连接面11去除之后，可以可选地将光致抗蚀层81完全去除，如结果在图1G中所示的。但是替换于此地，也可以将经结构化的光致抗蚀层81保留在位于其下方的保护层3上。 
如此外在图1H中示出的，接着提供第二接合伙伴2，在所示例子中是半导体芯片5，例如IGBT、MOSFET、JFET、晶闸管、二极管或任意其它半导体器件。半导体器件5拥有半导体体身50，该半导体体身在其下侧配备有下金属化层52以及在其与下侧50相对的上侧上配备有可选的上金属化层51。下金属化层52可以例如是漏极金属化部、源极金属化部、发射极金属化部、集电极金属化部、阳极金属化部或阴极金属化部。在任何情况下第二接合伙伴2都具有第二连接面21，该第二连接面在所示例子中通过下金属化层52的表面来提供。 
现在在第一连接面11与第二连接面21之间制造牢固接合的连接，这在下面参照图1J至1M来阐述。为了制造该连接，如在图1J中所示将连接介质15施加在第一连接面11和/或第二连接面21上。连接介质15例如可以是包含金属粉末或溶剂的膏体，或者是导电的或不导电的粘合剂，是焊剂或者是任何其它连接介质。然后将第二接合伙伴2放置在第一接合伙伴1上并且按照以下方式，即第一连接面11和第二连接面21彼此相对而且使得连接介质15被布置在第一连接面11与第二连接面21之间并且既接触第一连接面11又接触第二连接面21。 
然后如图1K所示，利用预先给定的挤压力p将第一接合伙伴1和第二接合伙伴2彼此按压，使得连接介质15被压缩。此外可选地可以加热连接介质15，并且同样可选地还可以在施加挤压力p的情况下将第一接合伙伴1和/或第二接合伙伴2加热到预先给定的温度T。如在图1L中所示，连接介质15既可以在预先给定的温度T下也可以在预先给定的挤压力p下经受若干时间，由此在第一接合伙伴1与第二接合伙伴2之间产生牢固接合的连接。但是，这些连接即使没有压力作用或者仅在很小的压力作用情况下以及即使没有温度作用或者仅在很小的温度作用情况下也能被制造出来。在任何情况下，待保护的表面片段12在该接合过程期间都通过保护层3保护免遭污染30。污染30通过保护层3远离待保护的表面片段12和/或被化合到保护层3中。 
在制造该牢固接合的连接之后，至少将保护层3的位于待保护的表面片段12上的片段去除，这例如可以借助湿蚀刻方法或干蚀刻方法进行。在此还将污染30一起去除，只要所述污染化合到保护层3中。图1M示出在将保护层3至少从待保护的表面片段12去除之后的布置。 
现在露出的待保护的表面片段12现在可以导电地与导电的连接元件7连接，这在图2中以导电的连接端元件7为例示出，该连接端元件7直接地、也就是无例如焊剂、经烧结的膏体或导电的粘合剂形式的附加连接介质地与待保护的表面12导电连接。连接端元件7例如可以被构造为接合导线，其通过导线接合方法，例如通过超声接合、楔接合、热超声接合与待保护的表面片段12连接。同样连接端元件7可以是导电的连接薄片或扁平带，其通过超声焊接或者通过例如激光射线焊接或电弧焊接的其它焊接方法与待保护的表面片段12连接。 
替换于此的，如图3所示还可以采用连接介质71以便在导电的连接端元件7与待保护的表面片段12之间制造导电的连接。连接介质71可以例如是焊剂、经烧结的含金属的膏体或者是导电的粘合剂。连接端元件7例如可以被构造为经冲压的并且可选地有角的薄片，或者构造为用作导电的连接端元件7的销钉或管脚。 
下面借助图4A至4F阐述另一种用于制造两个接合伙伴1，2的牢固接合的连接并且用于随后制造导电的连接端元件7与接合伙伴1，2之一的待保护的表面片段12的导电连接的方法。为此首先提供晶片100，该晶片包含多个还位于晶片复合物中的半导体芯片5，这在图4A中示出。如进一步在图4B中示出的，在晶片100上施加保护层3，该保护层3覆盖半导体芯片5。半导体芯片5在图4B中仅虚线示出，因为半导体芯片5被保护层3遮盖。保护层3的施加可以作为附加步骤添加到常规的晶片工艺中。在施加了保护层3之后，位于晶片复合物中的半导体芯片5连同被施加在晶片100上的保护层3一起被分离，使得在被分离的每个半导体芯片5上保留保护层3的片段。 
图4C以放大图示出在图4B中示出的截面E1-E1中已经被分离的半导体芯片5的横截面。如在此可看出的，通过分离半导体芯片5也分离了保护层3。保护层3覆盖在该实施例中强制的上芯片金属化部51并且由此还覆盖通过上金属化部51提供的、待保护的表面片段12。此外，半导体器件5的结构与借助图1H阐述的半导体芯片5的结构对应。与前面图1A至1M、图2、图3的实施例不同，在该实施例中第一接合伙伴1通过半导体芯片5给定。第一连接面11通过下芯片金属化部52提供，而待保护的表面片段12通过上芯片金属化部51提供。 
在提供了示例性地构造为衬底6的第二接合伙伴2之后，如前面参照图1A所阐述的，在第一接合伙伴1的第一连接面11与第二接合伙伴2的第二连接面21之间制造牢固接合的连接。为此又在第一连接面11和/或在第二连接面21上施加连接介质15。作为连接介质15合适的是已经参照图1J阐述的连接介质15。 
然后将第一接合伙伴1放置在第二接合伙伴2上，使得第一连接面11和第二连接面21彼此相对并且连接介质15布置在第一连接面11与第二连接面21之间，使得连接介质15分别接触第一连接面11和第二连接面21。保护层3由此位于第一接合伙伴1的背向第二接合伙伴的侧上。 
然后用预先给定的挤压力p将第一接合伙伴1和第二接合伙伴2彼此挤压，使得连接介质15被压缩。此外至少将连接介质15和可选地还将第一接合伙伴1和/或第二接合伙伴2加热到预先给定的温度T，并且使得连接介质15同时在预先给定的挤压力p和预先给定的温度T下经受一定的时间，这在图4E中图解出。 
通过挤压力p和温度T的作用，在第一接合伙伴1与第二接合伙伴2之间构造出牢固接合的连接。在制造了该牢固接合的连接之后，可以将保护层3至少从待保护的表面片段12去除，使得待保护的表面片段12露出。为了该去除可以采用湿化学或干化学蚀刻方法。图4F示出在将保护层3从待保护的表面片段12去除之后的布置。 
在现在露出的待保护的表面片段12与导电的连接端元件7之间，现在可以制造出导电连接。在此可以采用与前面已经参照图2所阐述的相同的连接元件7和相同的连接技术。图5示出在待保护的表面片段12与连接元件7之间制造出导电连接之后的布置，该连接元件7直接接触待保护的表面片段12。如在根据图2的布置中那样，连接端元件7直接接触待保护的表面片段12并且不使用例如焊剂、粘合剂或经烧结的膏体的附加连接介质。 
但是替换于此的同样可以借助连接介质71将导电的连接端元件7与待保护的表面片段12导电连接，如这结果在图6中所示的。可以使用已经参照图3阐述的相同的导电连接端元件、连接介质71和连接技术。 
现在还要借助图7A至7E阐述另一实施例。为此提供示例性地构造为半导体芯片5的第一接合伙伴1和示例性地构造为衬底6的第二接合伙伴2。衬底6可以与前面参照图1A所阐述的衬底6相同地构建。半导体芯片5可以与前面参照图1H所阐述的半导体芯片5相同地构建。 
随后在第一接合伙伴1的第一连接面11与第二接合伙伴2的第二连接面21之间制造牢固接合的连接。在所示例子中，第一连接面11通过下芯片金属化部52提供，并且第二连接面21通过衬底6的上侧金属化层61提供。为了制造牢固接合的连接，在第一连接面11和/或在第二连接面21上施加可以与前面参照图1J所阐述的连接介质15相同构建的连接介质15，如结果在图7A中示出的。 
如从该例子同样得到的，不仅第一接合伙伴1可以具有待保护的表面片段12，而且第二接合伙伴2也可以拥有待保护的表面片段22。这原则上不仅适用于半导体芯片5与衬底6的连接，而且适用于任意接合伙伴1，2的连接。 
如此外在图7B中所示的，接着将第一接合伙伴1放置到第二接合伙伴2上，并且使得第一连接面11和第二连接面21彼此相对并且连接介质15布置在第一连接面11与第二连接面21之间并分别接触第一连接面11和第二连接面21。连接介质15引起第一接合伙伴1粘附在第二接合伙伴2上，并且是在第一接合伙伴1与第二接合伙伴2之间构造出实际的牢固接合的连接之前。在当前发明的含义下，粘附与牢固接合的连接之间的区别在于将第一接合伙伴1与第二接合伙伴2分开所需的分离力。因此，假定于是当用于将第一接合伙伴1从第二接合伙伴2拉下的、垂直于第二连接面21的分离力小于50N时，存在粘附但不存在牢固接合的连接。 
如此外在图7C中所示的，然后将保护层3施加到待保护的表面片段12和另一待保护的表面片段22上。然后用预先给定的挤压力p将第一接合伙伴1与第二接合伙伴2彼此挤压，使得连接介质15压缩。此外连接介质15和可选地还有第一接合伙伴1和/或第二接合伙伴2在作用挤压力p的情况下被加热一定的时间到预先给定的温度T，由此在第一接合伙伴1与第二接合伙伴2之间产生牢固接合的连接。 
在制造了牢固接合的连接之后，可以将保护层3至少从第一待保护的表面片段12和另一待保护的表面片段22去除。该去除例如可以通过湿蚀刻或干蚀刻进行，例如借助使用氧等离子体的处理。只要存在通过氧等离子体而发生所处理的组件的部分被不期望地氧化的危险，所产生的氧化物就可以接着通过用氢等离子体或氢-氩等离子体处理两个接合伙伴1，2来加以去除。在图7E的情况下示出在去除保护层3之后的布置。 
此外可以将待保护的表面片段12和另一待保护的表面片段22导电地与相同的导电连接端元件7或者与不同的导电连接端元件7连接，这在下面借助图8和图9示例性地针对与相同连接端元件7的连接加以阐述。 
在根据图8的例子中，连接端元件7直接接触待保护的表面片段12和/或另一待保护的表面片段22并且没有使用例如焊剂、粘合剂或经烧结的膏体的附加连接介质。连接端元件7和所使用的连接技术可以与前面参照图2阐述的连接端元件7和那里阐述的连接技术相同。 
但是同样可以在使用附加连接介质71的情况下将导电连接端元件7与第一待保护的表面片段12和/或与另一待保护的表面片段22牢固接合的连接。作为连接端元件7和作为连接介质71，可以采用前面参照图3阐述的连接端元件7和连接介质71。 
前面已经借助不同的实施例阐述了如何在第一接合伙伴1或第二接合伙伴2的第一待保护的表面片段12和/或另一待保护的表面片段22上施加保护层3并且将接合伙伴1，2在施加保护层3的情况下相互牢固接合的连接。然后将保护层3从待保护的表面片段12或22去除。保护层的施加在本发明的所有构型中都可以例如借助PVD方法进行（PVD=physical vapor deposition，物理蒸镀沉积），例如通过蒸镀、通过电子射线蒸发、通过激光射线蒸发、通过电弧蒸发、通过分子射线外延、通过溅射或者通过离子电镀进行。 
在本发明含义下的保护层3例如可以是氮化物层、酰亚胺层、涂漆层、由金刚石类型的碳组成的层（DLC层，DLC=diamond-like carbon，类似金刚石的碳）或者是石墨层。 
如最后还在图10中示例性基于根据图1L的布置所示的，在制造出第一接合伙伴1与第二接合伙伴2之间的牢固接合的连接之后也可以借助激光射线8至少从待保护的表面片段去除保护层3。在此仅局部去除保护层3就足够了。 
只要前面为了在第一接合伙伴1与第二接合伙伴2之间制造牢固接合的连接而采用烧结连接，为了制造该牢固接合的连接采用连接介质15作为具有金属粉末和溶剂的膏体，则预先给定的压力p就例如可以在0MPa至30MPa的范围内并且预先给定的温度T可以例如在150℃至280℃的范围内。压力p和温度T可以同时作用于连接介质15长达至少60秒的持续时间。金属粉末可以例如是银粉末，其以精细颗粒的形式或者以扁平的絮凝物的形式存在。 

Claims (17)

1.用于在第一接合伙伴（1）和第二接合伙伴（2）之间制造牢固接合的连接的方法，具有以下步骤：
提供第一接合伙伴（1），其具有第一连接面（11）以及与第一连接面（11）不同的、待保护的表面片段（12）；
提供具有第二连接面（21）的第二接合伙伴（2）；
在所述待保护的表面片段（12）上施加保护层（3），使得待保护的表面片段（12）完全被所述保护层（3）覆盖；
在施加了保护层（3）的状态下，在第一连接面（11）与第二连接面（21）之间制造牢固接合的连接；
在制造牢固接合的连接之后，将保护层（3）从所述待保护的表面片段（12）至少部分地去除。
2.根据权利要求1所述的方法，其中制造牢固接合的连接包括以下步骤：
利用预先给定的挤压力（p）将第一接合伙伴（1）与第二接合伙伴（2）彼此挤压，使得包含金属粉末和溶剂并且布置在第一连接面（11）与第二连接面（21）之间的膏体（15）既接触第一连接面（1）又接触第二连接面（2），以及
在施加挤压力（p）的情况下在膏体（15）的预先给定的温度时烧结所述膏体（15）。
3.根据权利要求2所述的方法，其中预先给定的温度大于150℃和/或小于280℃。
4.根据权利要求2或3所述的方法，其中预先给定的挤压力以绝对值大于0MPa和/或以绝对值小于30MPa。
5.根据前述权利要求之一所述的方法，其中保护层（3）的施加按照以下方式进行，即保护层（3）与待保护的表面片段（12）齐平地施加在整个待保护的表面片段（12）上。
6.根据前述权利要求之一所述的方法，其中保护层（3）的施加通过PVD方法进行。
7.根据前述权利要求之一所述的方法，其中保护层（3）被构造为以下层之一或者具有以下层之一：
氮化物层；酰亚胺层；涂漆层；金刚石类型的碳层（DLC层）；石墨层。
8.根据权利要求7所述的方法，其中通过以下方式来进行保护层（3）的至少部分去除，即
通过干蚀刻或者通过等离子体蚀刻或者通过湿蚀刻或者通过激光剥离或者通过利用氧等离子体的处理将保护层（3）完全从第一接合伙伴（1）去除；或者
在使用事先施加在保护层（3）上并且结构化的掩模层（4）的情况下将保护层（3）通过干蚀刻或者通过等离子体蚀刻或者通过湿蚀刻部分地、但非完全地从第一接合伙伴（1）去除；或者
通过激光剥离将保护层（3）部分地、但非完全地从第一接合伙伴（1）去除。
9.根据权利要求1至6之一所述的方法，其中保护层（3）作为正性光致抗蚀层或者作为负性光致抗蚀层，其或者
在制造了牢固接合的连接之后通过干蚀刻或者通过等离子体蚀刻或者通过湿蚀刻或者通过激光剥离被完全从第一接合伙伴（1）去除；或者
在制造了牢固接合的连接之后被光刻地结构化，使得待保护的表面片段（12）露出。
10.根据前述权利要求之一所述的方法，其中第一接合伙伴（1）被构造为具有金属表面的衬底（6），并且第二接合伙伴（2）被构造为半导体芯片（5）。
11.根据权利要求10所述的方法，其中半导体芯片（5）具有上芯片金属化部（51）和下芯片金属化部（52），其中
上芯片金属化部（51）在制造了牢固接合的连接之后被布置在半导体芯片（5）的背向衬底（6）的侧上；
下芯片金属化部（52）在制造了牢固接合的连接之后被布置在半导体芯片（5）的朝向衬底（6）的侧上；
第一连接面（11）通过下芯片金属化部（52）的表面片段形成；以及
待保护的表面片段（12）通过衬底（6）的金属表面的表面片段形成。
12.根据权利要求1至9之一所述的方法，其中第一接合伙伴（1）被构造为半导体芯片（5），并且第二接合伙伴（2）被构造为具有金属表面的衬底（6）。
13.根据权利要求12所述的方法，其中半导体芯片（5）具有上芯片金属化部（51）和下芯片金属化部（52），其中
上芯片金属化部（51）在制造了牢固接合的连接之后被布置在半导体芯片（5）的背向衬底（6）的侧上；
下芯片金属化部（52）在制造了牢固接合的连接之后被布置在半导体芯片（5）的朝向衬底（6）的侧上；
第一连接面（11）通过下芯片金属化部（52）的表面片段形成；以及
待保护的表面片段（12）通过上芯片金属化部（51）的表面片段形成。
14.根据权利要求12或13所述的方法，其中保护层（3）的施加在半导体芯片（5）位于与其它半导体芯片（5）的晶片复合物中的时刻进行。
15.用于制造电连接的方法，该方法包括以下步骤：
提供导电的连接端元件（7）；
根据前述权利要求之一在第一接合伙伴（1）与第二接合伙伴（2）之间制造牢固接合的连接；
在将保护层（3）从待保护的表面片段（12）至少部分去除之后在导电的连接端元件（7）与待保护的表面片段（12）之间制造导电连接。
16.根据权利要求15所述的方法，其中
导电的连接端元件（7）被构造为接合导线；
导电连接的制造通过以下方式进行，即接合导线通过导线接合被接合到待保护的表面片段（12）上，使得该接合导线接触待保护的表面片段（12）。
17.根据权利要求15所述的方法，其中
导电的连接端元件（7）被构造为金属薄片；
导电连接的制造通过以下方式进行，即金属薄片被焊接、烧结、钎焊、超声焊接或者导电地粘接到待保护的表面片段（12）上。
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