CN103943421A - Driving electrode plate and capacitor upper electrode plate separating type RF MEMS switch - Google Patents
Driving electrode plate and capacitor upper electrode plate separating type RF MEMS switch Download PDFInfo
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- CN103943421A CN103943421A CN201410156750.8A CN201410156750A CN103943421A CN 103943421 A CN103943421 A CN 103943421A CN 201410156750 A CN201410156750 A CN 201410156750A CN 103943421 A CN103943421 A CN 103943421A
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- electrode plate
- electric capacity
- drive electrode
- mems switch
- top crown
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Abstract
The invention discloses a driving electrode plate and capacitor upper electrode plate separating type RF MEMS switch which comprises a substrate, a buffer dielectric layer, a ground wire, a coplanar waveguide transmission line, an anchor point, an insulating dielectric layer, elastic folding beams and an upper electrode. The ground wire, the coplanar waveguide transmission line and the anchor point are arranged on the buffer dielectric layer, the coplanar waveguide transmission line is covered with the insulating dielectric layer, a gap is reserved between the upper electrode and the insulating dielectric layer, the upper electrode is divided into a capacitor upper electrode plate and driving electrode plates located at the two ends of the capacitor upper electrode plate, the driving electrode plates are connected with the capacitor upper electrode plate through two sets of elastic folding beams in the bent shape of n with the bent number being one, and the driving electrode plates are connected with the anchor point through two sets of elastic folding beams in the bent shape of n with the bent number being two. According to the driving electrode plate and capacitor upper electrode plate separating type RF MEMS switch with the structure, the microbridge elastic coefficient is effectively reduced, so that the driving voltage of the capacitor type RF MEMS switch is reduced, and the driving voltage can be lower than 3 V.
Description
Technical field
the design relates to a kind of drive electrode plate, electric capacity top crown separate type RF mems switch, belongs to radio-frequency technique field.
Background technology
RF mems switch adopts static Driving technique conventionally, have that energy consumption low (number microwatt), biasing networks are simple, switching time is compared with advantages such as short (electrode size are little, rete is thin), but also has the shortcomings such as driving voltage high (30-80 V).And the operating voltage of mobile communication equipment is generally much lower, if the operating voltage of mobile phone is 3.3 V, need to increase up-converter.In addition, life-span and the driving voltage of Capacitive RF mems switch have much relations, the every decline 5--7V of driving voltage, and the life-span of switch can prolonged for another ten years.How to reduce driving voltage, not only relevant with the material of switch, be also closely related with the geometry of switch.
Summary of the invention
The object of the invention is the supporting construction by optimizing top crown, thereby effectively reduce the coefficient of elasticity of microbridge, thereby reduce the driving voltage of Capacitive RF mems switch.
For achieving the above object, the design realizes by following technological means:
A kind of drive electrode plate, electric capacity top crown separate type RF mems switch, comprise substrate, be positioned at the buffer medium layer on substrate, earth connection, coplanar waveguide transmission line, anchor point, insulating medium layer, elastic foldable beam, top electrode, described earth connection, coplanar waveguide transmission line, anchor point is located on buffer medium layer, described insulating medium layer is overlying on described coplanar waveguide transmission line, described top electrode and described insulating medium layer leave gap, it is characterized in that: described top electrode is divided into electric capacity top crown and is positioned at the drive electrode plate at electric capacity top crown two ends, between described drive electrode plate and electric capacity top crown, be n shape by two cover curved shapes, bending number is that the elastic foldable beam of 1 connects, described drive electrode plate is that n shape, bending number are that 2, tricks are that the elastic foldable beam of 2 is connected with anchor point by curved shape.
Preferably, described a kind of drive electrode plate, electric capacity top crown separate type RF mems switch, is characterized in that: described backing material is selected High Resistivity Si (being greater than 1000 Ω cm), and buffer medium layer material is SiO
2, dielectric layer material is Si
3n
4.
Preferably, described a kind of drive electrode plate, electric capacity top crown separate type RF mems switch, is characterized in that: described buffer medium bed thickness is 1 μ m, and described dielectric layer thickness is 150nm.
Preferably, described a kind of drive electrode plate, electric capacity top crown separate type RF mems switch, is characterized in that: described drive electrode plate and electric capacity top crown, described elastic foldable beam material are Si/Al alloy.
The invention has the beneficial effects as follows: the design is that n shape, bending number are the elastic foldable girder construction of 2 by adopting 2 cover curved shapes, top electrode is divided into the drive electrode plate and the electric capacity top crown that connect by two straight beams simultaneously, effectively reduce the coefficient of elasticity of microbridge, thereby effectively reduce the driving voltage of switch, experiment showed, that driving voltage can be lower than 3V.
Brief description of the drawings
Fig. 1 is RF mems switch structural representation, and Fig. 2 is elastic foldable girder construction shape schematic diagram, and Fig. 3 is elastic foldable beam and upper electrode arrangement schematic diagram.
The implication of drawing reference numeral is as follows: 1 elastic foldable beam, 2 top electrodes, 3 anchor points, 4 buffer medium layers, 5 insulating medium layers, 6 coplanar waveguide transmission lines, 7 earth connections, 8 substrates, 9 straight beams.
Embodiment
Below in conjunction with Figure of description, design is further described.
As Fig. 1--as shown in the of 3, a kind of drive electrode plate, electric capacity top crown separate type RF mems switch, comprise substrate 8, be positioned at the buffer medium layer 4 on substrate, earth connection 7, coplanar waveguide transmission line 6, anchor point 3, insulating medium layer 5, elastic foldable beam 1, top electrode 2, described earth connection 7, coplanar waveguide transmission line 6, anchor point 3 is located on buffer medium layer 4, described insulating medium layer 5 is overlying on described coplanar waveguide transmission line 6, described top electrode 2 leaves gap with described insulating medium layer 5, it is characterized in that: described top electrode 2 is divided into electric capacity top crown 2-2 and is positioned at the drive electrode plate 2-1 at electric capacity top crown two ends, between described drive electrode plate 2-1 and electric capacity top crown 2-2, be n shape by two cover curved shapes, bending number is that the elastic foldable beam 1-2 of 1 connects, described drive electrode plate 2-1 is that n shape, bending number are that 2, tricks are that the elastic foldable beam 1-1 of 2 is connected with anchor point by curved shape.
The driving voltage that reduces switch mainly contains three kinds of measures: the coefficient of elasticity that reduces switch microbridge; Reduce the initial separation between microbridge and bottom electrode; Increase the area of drive electrode.Reduce the initial separation between microbridge and bottom electrode, switch or while being subject to judder microbridge easily there is adhesion and make switch failure with holding wire, and can reduce the isolation of switch; Increase the area of drive electrode, can increase the physical dimension of switch.The design is mainly by the design optimization of switch microbridge elastic support structure, in keeping its good electrical performance, reduces the driving voltage of switch by reducing coefficient of elasticity.
Increase elastic foldable deflection of beam number and can reduce coefficient of elasticity.But along with the increase of bending number, the trend that coefficient of elasticity reduces slows down gradually.Too much tortuous number, also can increase the planar dimension of structure, increases the probability that tortuous beam fractures, subsides.So the design chooses above-mentioned elastic foldable deflection of beam number.
Preferably, described a kind of drive electrode plate, electric capacity top crown separate type RF mems switch, is characterized in that: described substrate 8 material selection High Resistivity Si (being greater than 1000 Ω cm), buffer medium layer 4 material are SiO
2, insulating medium layer 5 materials are Si
3n
4.
Preferably, described a kind of drive electrode plate, electric capacity top crown separate type RF mems switch, is characterized in that: described buffer medium layer 4 is thick is 1 μ m, and described insulating medium layer 5 thickness are 150nm.
Preferably, described a kind of drive electrode plate, electric capacity top crown separate type RF mems switch, is characterized in that: described drive electrode plate 2-1 and electric capacity top crown 2-2, described elastic foldable beam 1 material are Si/Al alloy.
More than show and described the design's general principle, principal character and advantage.The technical staff of the industry should understand; the design is not restricted to the described embodiments; the principle that the design is just described of describing in above-described embodiment and specification; do not departing under the prerequisite of the design's spirit and scope; the design also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the design.The claimed scope of the design is defined by appending claims and equivalent thereof.
Claims (4)
1. a drive electrode plate, electric capacity top crown separate type RF mems switch, comprise substrate, be positioned at the buffer medium layer on substrate, earth connection, coplanar waveguide transmission line, anchor point, insulating medium layer, elastic foldable beam, top electrode, described earth connection, coplanar waveguide transmission line, anchor point is located on buffer medium layer, described insulating medium layer is overlying on described coplanar waveguide transmission line, described top electrode and described insulating medium layer leave gap, it is characterized in that: described top electrode is divided into electric capacity top crown and is positioned at the drive electrode plate at electric capacity top crown two ends, between described drive electrode plate and electric capacity top crown, be n shape by two cover curved shapes, bending number is that the elastic foldable beam of 1 connects, described drive electrode plate is that n shape, bending number are that 2, tricks are that the elastic foldable beam of 2 is connected with anchor point by curved shape.
2. a kind of drive electrode plate as claimed in claim 1, electric capacity top crown separate type RF mems switch, is characterized in that: described backing material is selected High Resistivity Si (being greater than 1000 Ω cm), and buffer medium layer material is SiO
2, dielectric layer material is Si
3n
4.
3. a kind of drive electrode plate as claimed in claim 2, electric capacity top crown separate type RF mems switch, is characterized in that: described buffer medium bed thickness is 1 μ m, and described dielectric layer thickness is 150nm.
4. a kind of drive electrode plate as claimed in claim 1, electric capacity top crown separate type RF mems switch, is characterized in that: described drive electrode plate and electric capacity top crown, described elastic foldable beam material are Si/Al alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410156750.8A CN103943421A (en) | 2014-04-18 | 2014-04-18 | Driving electrode plate and capacitor upper electrode plate separating type RF MEMS switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410156750.8A CN103943421A (en) | 2014-04-18 | 2014-04-18 | Driving electrode plate and capacitor upper electrode plate separating type RF MEMS switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103943421A true CN103943421A (en) | 2014-07-23 |
Family
ID=51191038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410156750.8A Pending CN103943421A (en) | 2014-04-18 | 2014-04-18 | Driving electrode plate and capacitor upper electrode plate separating type RF MEMS switch |
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| CN (1) | CN103943421A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957774A (en) * | 2016-05-03 | 2016-09-21 | 北京邮电大学 | Switch beam |
| CN114142190A (en) * | 2021-11-29 | 2022-03-04 | 中北大学南通智能光机电研究院 | King's style of calligraphy top electrode formula single-pole double-throw switch |
| CN115662847A (en) * | 2022-11-16 | 2023-01-31 | 山东科技大学 | Series contact type radio frequency MEMS switch based on X wave band and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040050675A1 (en) * | 2002-09-17 | 2004-03-18 | The Board Of Trustees Of The University Of Illinois | High cycle cantilever MEMS devices |
| CN101763987A (en) * | 2009-12-30 | 2010-06-30 | 中国电子科技集团公司第十三研究所 | RF MEMES switch and manufacture method thereof |
| CN203910690U (en) * | 2014-04-18 | 2014-10-29 | 苏州锟恩电子科技有限公司 | Driving electrode plate and capacitive upper polar plate separated RF MEMS switch |
-
2014
- 2014-04-18 CN CN201410156750.8A patent/CN103943421A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040050675A1 (en) * | 2002-09-17 | 2004-03-18 | The Board Of Trustees Of The University Of Illinois | High cycle cantilever MEMS devices |
| CN101763987A (en) * | 2009-12-30 | 2010-06-30 | 中国电子科技集团公司第十三研究所 | RF MEMES switch and manufacture method thereof |
| CN203910690U (en) * | 2014-04-18 | 2014-10-29 | 苏州锟恩电子科技有限公司 | Driving electrode plate and capacitive upper polar plate separated RF MEMS switch |
Non-Patent Citations (1)
| Title |
|---|
| 高扬等: "低驱动电压电容式RF MEMS开关结构设计优化", 《微纳电子技术》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957774A (en) * | 2016-05-03 | 2016-09-21 | 北京邮电大学 | Switch beam |
| CN105957774B (en) * | 2016-05-03 | 2018-03-20 | 北京邮电大学 | A kind of switch beam |
| CN114142190A (en) * | 2021-11-29 | 2022-03-04 | 中北大学南通智能光机电研究院 | King's style of calligraphy top electrode formula single-pole double-throw switch |
| CN115662847A (en) * | 2022-11-16 | 2023-01-31 | 山东科技大学 | Series contact type radio frequency MEMS switch based on X wave band and manufacturing method thereof |
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Application publication date: 20140723 |