CN203910687U - Capacitance RF MEMS switch - Google Patents
Capacitance RF MEMS switch Download PDFInfo
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- CN203910687U CN203910687U CN201420168547.8U CN201420168547U CN203910687U CN 203910687 U CN203910687 U CN 203910687U CN 201420168547 U CN201420168547 U CN 201420168547U CN 203910687 U CN203910687 U CN 203910687U
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- medium layer
- mems switch
- upper electrode
- transmission line
- anchor point
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Abstract
A capacitance RF MEMS switch comprises a substrate, a buffer medium layer on the substrate, a ground wire, a coplanar waveguide transmission line, an anchor point, an insulation medium layer, an elastic folding beam, and an upper electrode; the ground wire, the coplanar waveguide transmission line and the anchor point are arranged on the buffer medium layer; the insulation medium layer covers the coplanar waveguide transmission line; one end of the elastic folding beam is connected with the anchor point, and the other end of the beam is connected with the upper electrode; a gap is arranged between the upper electrode and the insulation medium layer; the elastic folding beam is bended in a n shape, a bending number is 2, and a set number is 2; the upper electrode comprises a driving electrode plate and a capacitor upper electrode plate; the driving electrode plate and the capacitor upper electrode are connected through double straight beams. A support structure of the upper electrode plats is optimized to effectively reduce elasticity factors of a micro-bridge, thus reducing a driving voltage of the capacitance RF MEMS switch; test shows that the driving voltage can be lower than 3V.
Description
Technical field
the design relates to a kind of Capacitive RF mems switch, belongs to radio-frequency technique field.
Background technology
RF mems switch adopts static Driving technique conventionally, has that energy consumption low (number microwatt), biasing networks are simple, switching time is compared with advantages such as short (electrode size are little, rete is thin), but also has the shortcomings such as driving voltage high (30-80 V).And the operating voltage of mobile communication equipment is generally much lower, if the operating voltage of mobile phone is 3.3 V, need to increase up-converter.In addition, life-span and the driving voltage of Capacitive RF mems switch have much relations, the every decline 5--7V of driving voltage, and the life-span of switch can prolonged for another ten years.How to reduce driving voltage, not only relevant with the material of switch, be also closely related with the geometry of switch.
Summary of the invention
The object of the invention is by optimizing the supporting construction of top crown, thereby effectively reduce the coefficient of elasticity of microbridge, thereby reduce the driving voltage of Capacitive RF mems switch.
For achieving the above object, the design realizes by following technological means:
A kind of Capacitive RF mems switch, comprise substrate, be positioned at the buffer medium layer on substrate, earth connection, coplanar waveguide transmission line, anchor point, insulating medium layer, elastic foldable beam, top electrode, described earth connection, coplanar waveguide transmission line, anchor point is located on buffer medium layer, described insulating medium layer is overlying on described coplanar waveguide transmission line, described elastic foldable beam one end is connected with anchor point, one end is connected with top electrode, described top electrode and described insulating medium layer leave gap, it is characterized in that: described elastic foldable beam deflection is shaped as n shape, crooked number is 2, tricks is 2, described top electrode is divided into drive electrode plate and electric capacity top crown, between described drive electrode plate and electric capacity top crown, by two straight beams, connects.
Preferably, described a kind of Capacitive RF mems switch, is characterized in that: described backing material is selected High Resistivity Si (being greater than 1000 Ω cm), and buffer medium layer material is SiO
2, dielectric layer material is Si
3n
4.
Preferably, described a kind of Capacitive RF mems switch, is characterized in that: described buffer medium bed thickness is 1 μ m, and described dielectric layer thickness is 150nm.
Preferably, described a kind of Capacitive RF mems switch, is characterized in that: described drive electrode plate and electric capacity top crown, described elastic foldable beam material are Si/Al alloy.
The invention has the beneficial effects as follows: the design is that n shape, crooked number are the elastic foldable girder construction of 2 by adopting 2 cover curved shapes, top electrode is divided into the drive electrode plate and the electric capacity top crown that by two straight beams, connect simultaneously, effectively reduced the coefficient of elasticity of microbridge, thereby effectively reduced the driving voltage of switch, experiment showed, that driving voltage can be lower than 3V.
Accompanying drawing explanation
Fig. 1 is RF mems switch structural representation, and Fig. 2 is elastic foldable girder construction shape schematic diagram, and Fig. 3 is elastic foldable beam and upper electrode arrangement schematic diagram.
The implication of drawing reference numeral is as follows: 1 elastic foldable beam, 2 top electrodes, 3 anchor points, 4 buffer medium layers, 5 insulating medium layers, 6 coplanar waveguide transmission lines, 7 earth connections, 8 substrates, 9 straight beams.
Embodiment
Below in conjunction with Figure of description, design is further described.
As Fig. 1--as shown in the of 3, a kind of Capacitive RF mems switch, comprise substrate 8, be positioned at the buffer medium layer 4 on substrate, earth connection 7, coplanar waveguide transmission line 6, anchor point 3, insulating medium layer 5, elastic foldable beam 1, top electrode 2, described earth connection 7, coplanar waveguide transmission line 6, anchor point 3 is located on buffer medium layer 4, described insulating medium layer 5 is overlying on described coplanar waveguide transmission line 6, described elastic foldable beam 1 one end is connected with anchor point 3, one end is connected with top electrode 2, described top electrode 2 leaves gap with described insulating medium layer 5, it is characterized in that: described elastic foldable beam 1 curved shape is n shape, crooked number is 2, tricks is 2, described top electrode 2 is divided into drive electrode plate 2-1 and electric capacity top crown 2-2, between described drive electrode plate 2-1 and electric capacity top crown 2-2, by two straight beams 9, connects.
The driving voltage that reduces switch mainly contains three kinds of measures: the coefficient of elasticity that reduces switch microbridge; Reduce the initial separation between microbridge and bottom electrode; Increase the area of drive electrode.Reduce the initial separation between microbridge and bottom electrode, switch or while being subject to judder microbridge easily there is adhesion and make switch failure with holding wire, and can reduce the isolation of switch; Increase the area of drive electrode, can increase the physical dimension of switch.The design is mainly by the design optimization of switch microbridge elastic support structure, when keeping its good electrical performance, reduces the driving voltage of switch by reducing coefficient of elasticity.
Preferably, described a kind of Capacitive RF mems switch, is characterized in that: described substrate 8 material selection High Resistivity Si (being greater than 1000 Ω cm), buffer medium layer 4 material are SiO
2, insulating medium layer 5 materials are Si
3n
4.
Preferably, described a kind of Capacitive RF mems switch, is characterized in that: described buffer medium layer 4 is thick is 1 μ m, and described insulating medium layer 5 thickness are 150nm.
Preferably, described a kind of Capacitive RF mems switch, is characterized in that: described drive electrode plate 2-1 and electric capacity top crown 2-2, described elastic foldable beam 1 material are Si/Al alloy.
More than show and described the design's basic principle, principal character and advantage.The technical staff of the industry should understand; the design is not restricted to the described embodiments; the principle that the design is just described of describing in above-described embodiment and specification; do not departing under the prerequisite of the design's spirit and scope; the design also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the design.The claimed scope of the design is defined by appending claims and equivalent thereof.
Claims (4)
1. a Capacitive RF mems switch, comprise substrate, be positioned at the buffer medium layer on substrate, earth connection, coplanar waveguide transmission line, anchor point, insulating medium layer, elastic foldable beam, top electrode, described earth connection, coplanar waveguide transmission line, anchor point is located on buffer medium layer, described insulating medium layer is overlying on described coplanar waveguide transmission line, described elastic foldable beam one end is connected with anchor point, one end is connected with top electrode, described top electrode and described insulating medium layer leave gap, it is characterized in that: described elastic foldable beam deflection is shaped as n shape, crooked number is 2, tricks is 2, described top electrode is divided into drive electrode plate and electric capacity top crown, between described drive electrode plate and electric capacity top crown, by two straight beams, connects.
2. a kind of Capacitive RF mems switch as claimed in claim 1, is characterized in that: described backing material is selected High Resistivity Si, and resistivity is greater than 1000 Ω cm, and buffer medium layer material is SiO
2, dielectric layer material is Si
3n
4.
3. a kind of Capacitive RF mems switch as claimed in claim 2, is characterized in that: described buffer medium bed thickness is 1 μ m, and described dielectric layer thickness is 150nm.
4. a kind of Capacitive RF mems switch as claimed in claim 1, is characterized in that: described drive electrode plate and electric capacity top crown, described elastic foldable beam material are Si/Al alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420168547.8U CN203910687U (en) | 2014-04-09 | 2014-04-09 | Capacitance RF MEMS switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420168547.8U CN203910687U (en) | 2014-04-09 | 2014-04-09 | Capacitance RF MEMS switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203910687U true CN203910687U (en) | 2014-10-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420168547.8U Expired - Fee Related CN203910687U (en) | 2014-04-09 | 2014-04-09 | Capacitance RF MEMS switch |
Country Status (1)
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943417A (en) * | 2014-04-09 | 2014-07-23 | 苏州锟恩电子科技有限公司 | Capacitive RF MEMS switch |
| CN103943418A (en) * | 2014-04-14 | 2014-07-23 | 苏州锟恩电子科技有限公司 | Elastic micro-bridge type RF MEMS switch |
| CN105742124A (en) * | 2016-05-03 | 2016-07-06 | 北京邮电大学 | Microelectromechanical system switch |
| CN109271692A (en) * | 2018-09-04 | 2019-01-25 | 东南大学 | A kind of MEMS two-end fixed beam structure mechanics analysis method under the bending condition based on flexible base board |
| WO2021243745A1 (en) * | 2020-06-02 | 2021-12-09 | 瑞声声学科技(深圳)有限公司 | Mems capacitive switch |
-
2014
- 2014-04-09 CN CN201420168547.8U patent/CN203910687U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943417A (en) * | 2014-04-09 | 2014-07-23 | 苏州锟恩电子科技有限公司 | Capacitive RF MEMS switch |
| CN103943418A (en) * | 2014-04-14 | 2014-07-23 | 苏州锟恩电子科技有限公司 | Elastic micro-bridge type RF MEMS switch |
| CN105742124A (en) * | 2016-05-03 | 2016-07-06 | 北京邮电大学 | Microelectromechanical system switch |
| CN109271692A (en) * | 2018-09-04 | 2019-01-25 | 东南大学 | A kind of MEMS two-end fixed beam structure mechanics analysis method under the bending condition based on flexible base board |
| WO2020048109A1 (en) * | 2018-09-04 | 2020-03-12 | 东南大学 | Mechanical analysis method of mems double-end fixed beam structure under bending condition of flexible substrate |
| WO2021243745A1 (en) * | 2020-06-02 | 2021-12-09 | 瑞声声学科技(深圳)有限公司 | Mems capacitive switch |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141029 Termination date: 20150409 |
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| EXPY | Termination of patent right or utility model |