CN103941506A - 一种像素结构、显示面板、显示装置及其制造方法 - Google Patents

一种像素结构、显示面板、显示装置及其制造方法 Download PDF

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Publication number
CN103941506A
CN103941506A CN201410126726.XA CN201410126726A CN103941506A CN 103941506 A CN103941506 A CN 103941506A CN 201410126726 A CN201410126726 A CN 201410126726A CN 103941506 A CN103941506 A CN 103941506A
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China
Prior art keywords
electrode
dot structure
signal wire
insulation course
deposit
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CN201410126726.XA
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CN103941506B (zh
Inventor
刘波
傅炯樑
简守甫
夏志强
席克瑞
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Tianma Microelectronics Co Ltd
Shanghai AVIC Optoelectronics Co Ltd
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Tianma Microelectronics Co Ltd
Shanghai AVIC Optoelectronics Co Ltd
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Priority to CN201410126726.XA priority Critical patent/CN103941506B/zh
Publication of CN103941506A publication Critical patent/CN103941506A/zh
Priority to US14/465,737 priority patent/US9865201B2/en
Priority to DE102014112635.1A priority patent/DE102014112635A1/de
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    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
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Abstract

本发明提供一种像素结构，包含扫描线；数据线，与扫描线交叉形成像素单元区域，且相互绝缘；第一电极，形成在像素单元区域内；第二电极，与第一电极绝缘，且位于第一电极下方；信号线，与最上层电极采用同种材料制成且位于同层，其中，信号线与最上层电极绝缘设置。这种像素结构能够减少触摸面板与显示面板的结合工艺，同时减薄面板厚度。

Description

一种像素结构、显示面板、显示装置及其制造方法
技术领域
本发明涉及显示领域，尤其涉及一种像素结构、包含该像素结构的液晶面板，以及包含该像素结构的的液晶显示装置。
背景技术
液晶显示面板和液晶显示装置是目前主流显示面板之一，随着近年来触摸屏手机、导航系统等电子设备的普及，在显示元件上安装触摸面板的电子设备越来越多。触摸面板上有接收信号线和驱动信号线，接收信号是发射端，用于发射检测线号，而驱动信号线用于接受检测信号值，传导至IC进行运算。对于安装有触摸面板的电子设备，通过按压其触摸面板表面，就能进行相应操控，实现显示装置的各种功能和效果，这种直接的操作方式深受大众的喜爱。
随着技术的进步，人们对于显示器件的要求也越来越高，轻薄化是当今的流行趋势之一，如何在实现相同功能的条件下，减小显示器件的厚度，也是人们致力于研究的问题之一。
发明内容
本发明旨在提供一种像素结构、显示面板、显示装置及其制造方法，能够减少触摸面板与显示面板的结合工艺。
本法明包括一种像素结构，包含：扫描线；数据线，与所述扫描线交叉形成像素单元区域，且相互绝缘；第一电极，形成在所述像素单元区域内；第二电极，与所述第一电极绝缘，且位于所述第一电极下方；信号线，与最上层电极采用同种材料制成且位于同层，其中，所述信号线与最上层电极绝缘设置。
本发明还提供了一种液晶显示面板，包括：TFT阵列基板；与所述TFT阵列基板相对设置的彩膜基板；设置于所述TFT阵列基板和彩膜基板之间的液晶层；所述TFT阵列基板包含上述的像素结构。
本发明还提供了一种液晶显示装置，包括上述任一种的液晶显示面板。
本发明还提供了一种制造像素结构的工艺方法，包括：提供一基板，在基板上沉积TFT，在TFT上方沉积绝缘层，在绝缘层上方沉积并刻蚀出第二电极，在第二电极上方沉积绝缘层，在绝缘层的上方沉积第一电极，刻蚀第一电极的同时，刻蚀出不与第一电极接触的信号线。
本发明还提供了一种制造像素结构的工艺方法，包括：提供一基板，在基板上沉积TFT，在TFT上方沉积绝缘层，在绝缘层上方沉积并刻蚀出第二电极，在第二电极上方沉积第一绝缘层，在第一绝缘层上方沉积并刻蚀出第一电极，在第一电极上方沉积第二绝缘层，在第二绝缘层上方沉积第三电极，刻蚀第三电极的同时，刻蚀出不与第三电极接触的信号线。
本发明具有如下一种或多种的技术效果：
1、能够减少触摸面板与显示面板的结合工艺；
2、能够减薄面板厚度；
3、能够增大电极之间的横向电场和存储电容，防止串扰、闪烁现象的发生。
附图说明
图1为现有技术的像素结构俯视图示意图；
图2为图1中A-A’的剖视图；
图3本发明第一实施例提供的像素结构俯视图示意图；
图4为图3中B-B’的剖视图；
图5为本发明第二实施例提供的像素结构的俯视结构示意图；
图6为图5中C-C’的剖视图；
图7为图5中D-D’的剖视图；
图8为图1所示的像素结构的横向电场分布与图5所示的像素结构的横向电场的分布对比示意图；
图9为本发明第二实施例提供的像素结构的俯视结构示意图；
图10为本发明第三实施例提供的像素结构的俯视结构示意图;
图11为本发明提供的面板示意图；
图12为本发明提供的显示装置示意图。
具体实施方式
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显而易见地，下面描述中的附图仅仅是本发明的几种实施例，而非全部实施方式，基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
目前，触摸屏类显示装置的制造可分为in cell式、on cell式和外挂式。外挂式产品中，外置的触摸面板部件与液晶面板未能实现一体化，很难实现面板的薄型化和轻量化。另外，在将触摸面板外置于液晶面板的方式中，液晶和触摸面板之间存在物理空间，因此，在液晶面板的上面和触摸面板的下面之间会反射外来光线等，导致在室外等明亮的环境下的可视性降低。因此，近年来，将触摸面板、液晶面板一体化制造是人们关注及研究的热点。On cell产品在彩色滤光片基板和偏光片之间形成透明电极，难度较低。技术上尚未能很好的克服薄型化、触控时产生的颜色不均等问题。In-Cell是指将触摸面板功能嵌入到液晶像素中的方法，即在显示屏内部嵌入触摸传感器功能，这样能使屏幕变得更加轻薄，但是它制备工艺复杂，导致良率较低，因此，如何能节省触摸屏类显示装置的工艺、提高其良率、降低其成本是人们致力于解决的问题。
此外，液晶显示模式主要有TN（Twisted Nematic）型、VA（VirticalAlignment）型、IPS（In Plane Switching）型、FFS（Fringe Field Switching）型等。其中，IPS/FFS型液晶显示面板由于具有优越的广视角等特性，得到广泛的应用。图1是现有技术中FFS型液晶显示的像素结构示意图，包含扫描线111；与扫描线绝缘交叉的数据线112；位于扫描线111和数据线112交叉处的薄膜晶体管（TFT）113；由扫描线111与数据线112围成的像素区域。该像素结构的具体结构可以参考图1和图2，图2为图1中A-A’的剖视图。结合图1和图2可以看出，该像素结构包括多个条形像素电极114、片状公共电极115以及设置于像素电极114和公共电极115之间使二者绝缘的绝缘层116；像素电极114和公共电极115之间产生基本平行于基板110的电场。在该像素结构中，像素电极114与公共电极115重叠的区域形成电容，随着现今产品PPI（pixelper inch)的增大，像素节距（Pitch）越来越小，相对应地，像素存储电容也越来越小，存储电容不足会导致显示中出现串扰、闪烁等多种不良现象，也是现今需要解决的问题之一。
请参照图3，为本发明像素结构的第一实施例示意图，在本实施例中，基板上包括多条扫描线211，多条数据线212，扫描线211与数据线212绝缘交叉形成像素单元区域。
请参照图4，图4为图3中B-B’的剖视图。结合图3和图4可以看出，该像素结构包括第一电极214和第二电极215，二者之间设置有第一绝缘层216。第一电极214位于第一绝缘层216上侧，第二电极215位于第一绝缘层216下侧。第一电极214和第二电极215之间产生电场，使得液晶分子（图未示）发生旋转。可选地，第一电极214为条状，第二电极215为片状。
第一电极214的同层还包含与第一电极214同种材料且绝缘设置的接收信号线219，可选地，接收信号线219与扫描线211平行，且位于相邻两个像素单元之间，平行设置使扫描线方向的布线空间更大，而且接收信号线是主动发射信号的，会接固定扫描电平或者固定低电平，沿扫描线方向设置使抗干扰能力更强。需要说明的是，本申请文件中，“平行”的概念并不限于绝对平行，还可以为大体平行。接收信号线219的节距（即相邻两条接收信号线之间的距离）一般根据人手尺寸设定，节距越小，触控精度越高。可选地，接收信号线219的节距为5mm～6mm，该尺寸既可以实现精准触控，又可以节省材料，降低设备功耗。可选地，接收信号线219是相邻扫描线距离的整数倍，可选地，该倍数为230-275倍。接收信号线219经过走线221连接至IC，与触摸面板相连接，接收信号线219具有发射检测信号的作用。可选地，接收信号线219与第一电极214，在同一步制备工艺中制成。在现有技术中，接收信号线制备于第一电极上方，二者通过绝缘层隔开，本实施例将触摸面板的接收信号线219与第一电极214采用一步刻蚀，制备于同一层上，能够节省工艺流程，缩短工艺时间，从而降低成本。并且，与现有技术相比，能够省略一层绝缘层和接收信号线层，所以能够减小其厚度，在同等性能的条件下，比现有技术制备的产品更加轻薄。
需要注意的是，本发明中的第一电极214与接收信号线219，不能相互接触，否则会引起二者之间信号互相干扰，导致显示屏无法正常工作。
本实施例中，可选地，第一电极214为像素电极，通常由若干条组成，第二电极215为公共电极，第二电极215间隔设置，形成有一个或多个缝隙。在本实施例中，第一电极214可以为公共电极，第二电极215可以为像素电极。
本发明中还包含一种制造像素结构的制造方法，包括：提供一基板，在基板上沉积TFT，在TFT上方沉积绝缘层，在绝缘层上方沉积并刻蚀出第二电极，在第二电极上方沉积绝缘层，在绝缘层的上方沉积第一电极，刻蚀第一电极的同时，刻蚀出不与第一电极接触的信号线。其中，TFT上方的绝缘层与第二电极不一定直接接触，二者之间也可以存在有其他层。
请参照图5和图6，为本发明像素结构的第二实施例示意图，在本实施例中，与第一实施例不同之处在于，该像素结构还进一步包括第三电极317，第三电极317位于第一电极314上方，且二者之间设置有第二绝缘层318，第三电极317与第二电极315具有相同的电位，通常，第三电极317通过贯穿第一绝缘层316和第二绝缘层318的过孔与TFT313的漏极3131电连接（如图7所示）。
请参照图5及图8，与第一实施例类似，第三电极317的同层还包含与第三电极317同种材料且不相互接触的接收信号线319，可选地，接收信号线319与扫描线311平行，且位于相邻两个像素单元之间，平行设置使扫描线方向的布线空间更大，而且接收信号线是主动发射信号的，会接固定扫描电平或者固定低电平，沿扫描线防线设置使抗干扰能力更强。需要说明的是，本申请文件中，“平行”的概念并不限于绝对平行，还应当适当扩展到基本平行。接收信号线319的节距（即相邻两条接收信号线之间的距离）可选地，接收信号线319的节距为5mm～6mm，该尺寸既可以实现精准触控，又可以节省材料，降低设备功耗。可选地，接收信号线319是相邻扫描线距离的整数倍，可选地，该该倍数为230-275倍。接收信号线319经过走线321，再经过干线322连接至IC，与触摸面板相连接，接收信号线319具有发射检测线号的作用。可选地，接收信号线319与第三电极317，在同一步制备工艺中制成。
在本实施例中，触摸面板的接收信号线319与第三电极317可以采用一步工艺制成，能够节省工艺流程，缩短工艺时间，从而降低成本。才外本实施例中第三电极的加入，既起到增大横向电场、增大存储电容的作用，同时又作为触摸面板的接收信号线。
本实施例中，第一电极314可以是公共电极，第二电极315可以是像素电极，第三电极317可以是像素电极，其中，第二电极315和第三电极317可以为条形电极，第一电极314可以为片状电极，片状电极间隔设置，形成有一个或多个缝隙。可选地，第三电极317在像素单元平面的垂直方向上不覆盖第一电极314的缝隙区域，可选地，全部第三电极317在像素单元区域平面的垂直方向上均不覆盖第一电极314的缝隙区域。控制液晶旋转的是横向电场，横向电场的产生是由像素电极与公共电极的表面形成的，液晶分子会在电场力的作用下旋转，电场力控制液晶分子的旋转角度的大小，旋转角度越大，透光率越高。本实施例中第三电极317在像素单元平面的垂直方向上不覆盖第一电极314的缝隙区域目的是让电场形成在液晶层，若像素结构的上层电极完全覆盖了下层电极的缝隙区域，液晶层就无法形成横向电场，而仅在钝化层间有横向电场，但钝化层的横向电场无法控制液晶转动，同理，即使上层电极部分覆盖下层电极的缝隙区域，也会导致横向电场的削弱。因此，第三电极317在像素单元平面的垂直方向上不覆盖第一电极314的缝隙区域可以增加横向电场，从而增大光透过率。可选地，第一电极314与第三电极317在像素单元平面的垂直方向上全部或部分交叠，形成存储电容。第二电极315与第一电极314垂直方向上全部或部分交叠，形成存储电容，存储电容的形成使得显示单元的电压更加稳定，防止串扰、闪烁现象的发生。另外，本实施例的适当变形，也可以是第一电极314为像素电极，第二电极315、第三电极317为像素电极。
请参照图9，图9是本实施例与现有技术所形成的电场强度对比示意图，现有技术形成的横向电场分布图如图9（a）所示，本实施例形成的横向电场分布图如图9（b）所示，从图中可以看到，现有技术具有四个横向电场，而本实施例具有六个横向电场。由此可见，本实施例中，第三电极的加入对电场有明显的改进，本实施例的像素结构具有更大的透光率。
本发明还包含一种制造像素结构的工艺方法，包括，提供一基板，在基板上沉积TFT，在TFT上方沉积绝缘层，在绝缘层上方沉积并刻蚀出第二电极，在第二电极上方沉积第一绝缘层，在第一绝缘层上方沉积第一电极，在第一电极上方沉积第二绝缘层，在第二绝缘层上方沉积第三电极，刻蚀第三电极的同时，刻蚀出不与第三电极接触的信号线。
类似地，本发明也可以推广运用于四层乃至多层电极的像素结构，四层及多层电极结构只需在本发明的基础上做重复性扩展，无需创造性劳动，因此，只要顶部电极与触摸面板信号线采用一步工艺制作，都在本发明的思想之内。
请参照图10，图10为本发明像素结构的第三实施例示意图，与第二实施例相比不同之处在于，本实施例中第三电极417的同层包含与第三电极417同种材料且不相互接触的驱动信号线420，以使得触摸面板的驱动信号线420与第三电极417可以采用一步工艺制成，能够节省工艺流程，缩短工艺时间，从而降低成本。可选地，驱动信号线420与数据线412平行，需要说明的是，本申请文件中，“平行”的概念并不限于绝对平行，还应当适当扩展到基本平行。驱动信号线420的节距（即相邻两条接收信号线之间的距离）是相邻数据线距离的整数倍。驱动信号线420用于接受触摸面板的检测信号值，传导至IC进行运算。可选地，驱动信号线420与第三电极417，在同一步制备工艺中制成。
请参照图11，本发明还包含一种液晶显示面板，包括：TFT阵列基板；与所述TFT阵列基板相对设置的彩膜基板（图中未示出）；设置于所述TFT阵列基板和彩膜基板之间的液晶层；所述TFT阵列基板包含如以上任意一种实施例所述的像素结构。
请参照图12，本发明还包含一种液晶显示装置，可包括以上任意一种实施例所述的液晶显示面板。
本申请文件中，所述条形可以是直条形或V形或折线形等。
可选地，第一电极、第二电极、接收信号线的材料都为透明导电材料，可以为ITO。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (18)

1.一种像素结构，包含：
扫描线；
数据线，与所述扫描线交叉形成像素单元区域，且相互绝缘；
第一电极，形成在所述像素单元区域内；
第二电极，与所述第一电极绝缘，且位于所述第一电极下方；
信号线，与最上层电极采用同种材料制成且位于同层，其中，所述信号线与最上层电极绝缘设置。
2.根据权利要求1所述的像素结构，其特征在于，第一电极为像素电极，第二电极为公共电极。
3.根据权利要求1所述的像素结构，其特征在于，第一电极为条状，第二电极为片状。
4.根据权利要求1所述的像素结构，其特征在于，还包含位于所述第一电极上方的第三电极，其中所述第三电极与所述第二电极具有相同电位。
5.根据权利要求1或2所述的像素结构，其特征在于，所述信号线与所述扫描线平行设置。
6.根据权利要求2所述的像素结构，其特征在于，所述第一电极为片状，所述第二电极为条状，所述第三电极为条状。
7.根据权利要求1或2所述的像素结构，其特征在于，所述第一电极与所述第三电极在像素单元区域平面的垂直方向上全部或部分交叠。
8.根据权利要求2所述的像素结构，其特征在于，所述第一电极与所述第二电极在像素单元区域平面的垂直方向上全部或部分交叠。
9.根据权利要求2或4所述的像素结构，其特征在于，所述第一电极间隔设置，形成有一个或多个缝隙，其中，所述第三电极在像素单元区域平面的垂直方向上不覆盖第一电极的缝隙区域。
10.根据权利要求7所述的像素结构，其特征在于，所述全部第三电极在像素单元区域平面的垂直方向上均不覆盖第一电极的缝隙区域。
11.根据权利要求2所述的像素结构，其特征在于，所述第一电极为公共电极，所述第二电极为像素电极，所述第三电极为像素电极。
12.根据权利要求2所述的像素结构，其特征在于，所述第一电极与第二电极之间设置有第一绝缘层，第一电极与第三电极之间设置有第二绝缘层。
13.根据权利要求2所述的像素结构，其特征在于，所述第一电极、第二电极、第三电极都采用透明导电材料制成。
14.根据权利要求1所述的像素结构，其特征在于，所述信号线为触摸面板驱动信号线或触摸面板接收信号线。
15.根据权利要求1所述的像素结构，其特征在于，相邻所述信号线之间的距离设置为相邻所述扫描线距离的整数倍。
16.一种液晶显示面板，包括：
TFT阵列基板；
与所述TFT阵列基板相对设置的彩膜基板；
设置于所述TFT阵列基板和彩膜基板之间的液晶层；
所述TFT阵列基板包含如权利要求1-14所述的像素结构。
17.一种制造像素结构的制造方法，其特征在于，包括：提供一基板，在基板上沉积TFT，在TFT上方沉积绝缘层，在绝缘层上方沉积并刻蚀出第二电极，在第二电极上方沉积绝缘层，在绝缘层的上方沉积第一电极，刻蚀第一电极的同时，刻蚀出不与第一电极接触的信号线。
18.一种制造像素结构的制造方法，其特征在于，提供一基板，在基板上沉积TFT，在TFT上方沉积绝缘层，在绝缘层上方沉积并刻蚀出第二电极，在第二电极上方沉积第一绝缘层，在第一绝缘层上方沉积并刻蚀出第一电极，在第一电极上方沉积第二绝缘层，在第二绝缘层上方沉积第三电极，刻蚀第三电极的同时，刻蚀出不与第三电极接触的信号线。
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