CN103915552A - 一种高光效高显色性led - Google Patents

一种高光效高显色性led Download PDF

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CN103915552A
CN103915552A CN201410113450.1A CN201410113450A CN103915552A CN 103915552 A CN103915552 A CN 103915552A CN 201410113450 A CN201410113450 A CN 201410113450A CN 103915552 A CN103915552 A CN 103915552A
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glue
pin
led
phosphor mixture
layer
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李钊英
刘大伟
周党培
钟广宇
文良平
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MLS Co Ltd
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MLS Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开一种高光效高显色性LED，包括支架碗杯、引脚、LED芯片以及胶水荧光粉混合物，所述支架碗杯内部开设一内凹陷腔，所述LED芯片通过固晶胶固定在所述凹陷腔的底部，所述芯片上部覆盖有第一层所述胶水荧光粉混合物和第二层所述胶水荧光粉混合物，第一层所述胶水荧光粉混合物体积为凹陷腔的四分之一到五分之一，第二层所述胶水荧光粉混合物体积为凹陷腔的四分之三到五分之四；所述引脚包括第一引脚和第二引脚，所述LED芯片通过金线分别与所述第一引脚和所述第二引脚电连接。

Description

一种高光效高显色性LED
技术领域
本发明涉及LED技术领域，特别是涉及一种新型的高光效高显色性LED。
背景技术
随着节能减排政策的推广，LED照明也是渐入人心，一般照明光源采用白光为主。LED白光是由蓝色芯片通电发光，部分蓝光激发涂敷在上的荧光粉发出的黄光，激发的黄光和剩余的蓝光混合而成。此种白光有实现简单，易于生产等优点，但是，由于此光只有黄色和蓝色光谱，对色彩的还原性还是较差，特别是对红色的还原性。由此导致在一些对色彩还原性要求较高的场所不适用，影响产品推广。
发明内容
本发明提供一种高光效高显色性LED，使其具有其激发效率更高、光效高、显色性好的优点。
为解决上述技术问题，本发明一种高光效高显色性LED，包括支架碗杯、引脚、LED芯片以及胶水荧光粉混合物，所述支架碗杯内部开设一内凹陷腔，所述LED芯片通过固晶胶固定在所述凹陷腔的底部，所述芯片上部覆盖有第一层所述胶水荧光粉混合物和第二层所述胶水荧光粉混合物，第一层所述胶水荧光粉混合物体积为凹陷腔的四分之一到五分之一，第二层所述胶水荧光粉混合物体积为凹陷腔的四分之三到五分之四；
所述引脚包括第一引脚和第二引脚，所述LED芯片通过金线分别与所述第一引脚和所述第二引脚电连接。
进一步的，所述第一引脚的一端和所述第二引脚的一端分别通过所述支架碗杯的两侧固定在靠近所述凹陷腔的底部。
第一层所述胶水荧光粉混合物为胶水红色荧光粉，它被发射波长为430-470nm蓝光激发，发出波长为610-660nm的红光；第二层所述胶水荧光粉混合物为胶水黄色荧光粉混合物，它被发射波长为430-470nm蓝光激发，发出波长为520-570nm的黄光。
通过调整红色荧光粉胶水和黄色荧光粉胶水的不同比例，控制红光、黄光和蓝光的光通量，从而得到不同色温的高显色性白光。
本发明的高光效高显色性LED，其发光效率和传统封装的发光二极管对比，达到相同的显色指数。本发明LED光效要高。
采用以上设计后，本发明与现有技术比较有以下有益效果：
本发明高光效高显色性LED，使红色荧光粉更加接近LED芯片，其激发效率更高；使黄色荧光粉相对远离LED芯片发热源，使之更加稳定，发光颜色不容易出现漂移；通过在LED发光光谱中补偿红色光谱，使产品发光光谱的连续性加强，对事物的色彩还原性更加真实。其封装质量好，光效高、显色性好。
下面通过附图和实施例，对本发明的技术方案做进一步的详细描述。
附图说明
上述仅是本发明技术方案的概述，为了能够更清楚了解本发明，以下结合附图与具体实施方式对本发明作进一步的详细说明。
图1是本发明的高光效高显色性LED的结构示意图；
图2是本发明的另一实施例的高光效高显色性LED结构示意图。
具体实施方式
请参阅图1、图2所示，本发明一种高光效高显色性LED，包括支架碗杯1，支架1上设置一内凹陷腔11，以及位于支架1对应两个侧边的引脚41和42，芯片6通过固晶胶5固定在支架内腔11的内部。支架碗杯1为内凹陷腔11或者是有围坝的平面线路板，荧光粉和封装胶水点在支架碗杯中，烘烤成型。封装完成的LED芯片，芯片上部覆盖封装的胶水黄色荧光粉混合物2和胶水红色荧光粉混合物7，上述胶水荧光粉混合物分两次封装。
其中，LED芯片通过固晶胶5固定在凹陷腔11的底部，LED芯片6上部覆盖有第一层所述胶水荧光粉混合物和第二层所述胶水荧光粉混合物，第一层所述胶水荧光粉混合物体积为凹陷腔的四分之一到五分之一，第二层所述胶水荧光粉混合物体积为凹陷腔的四分之三到五分之四；
引脚包括第一引脚41和第二引脚42，LED芯片6通过金线3分别与第一引脚41和第二引脚42电连接。
第一引脚41的一端和第二引脚42的一端分别通过支架碗杯的两侧固定在靠近凹陷腔的底部。
第一层胶水荧光粉混合物为胶水红色荧光粉7，它被发射波长为430-470nm蓝光激发，发出波长为610-660nm的红光；第二层胶水荧光粉混合物为胶水黄色荧光粉混合物2，它被发射波长为430-470nm蓝光激发，发出波长为520-570nm的黄光。
通过调整红色荧光粉胶水和黄色荧光粉胶水的不同比例，控制红光、黄光和蓝光的光通量，从而得到不同色温的高显色性白光。
本发明一种高光效高显色性LED的封装方法包括以下步骤：
1、支架1，其中支架碗杯1设有一内凹空腔11，LED芯片6通过固晶胶5贴在支架内腔11的中心位置；
2、把LED支架碗杯1放进工作区中预热，预热时间为3-5分钟，温度为80-120℃之间；
3、把放有LED芯片的支架碗杯1送到工作区；
4、在LED支架内腔11中点上一次封胶胶水黄色荧光粉混合物7，胶量为支架内腔11的四分之一到五分之一之间；
5、通过传送带，取出支架碗杯1，放入80-100℃的环境中烘烤1小时，然后取出；
6、在LED支架碗杯内腔11中点上一次封胶胶水红色荧光粉混合物7，胶量为支架碗杯内腔11的四分之三到五分之四之间；
7、通过传送带，取出支架碗杯1，放入80-100℃的环境中烘烤1小时，然后转到150℃烘烤4小时后取出。
上述步骤中，支架进料和出料都是通过传输带传送。
其中，胶水的制备方法为：胶水是由A剂和B剂混合而成，其工作原理是A剂和B剂分开放置，荧光粉和A剂在生产前按一定比例先行混合。生产时，通过压力泵把胶水挤出，通过静态混合器把胶水、荧光粉混合好。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制，本领域技术人员利用上述揭示的技术内容做出些许简单修改、等同变化或修饰，均落在本发明的保护范围内。

Claims (3)

1.一种高光效高显色性LED，其特征在于包括支架碗杯、引脚、LED芯片以及胶水荧光粉混合物，所述支架碗杯内部开设一内凹陷腔，所述LED芯片通过固晶胶固定在所述凹陷腔的底部，所述芯片上部覆盖有第一层所述胶水荧光粉混合物和第二层所述胶水荧光粉混合物，第一层所述胶水荧光粉混合物体积为凹陷腔的四分之一到五分之一，第二层所述胶水荧光粉混合物体积为凹陷腔的四分之三到五分之四；
所述引脚包括第一引脚和第二引脚，所述LED芯片通过金线分别与所述第一引脚和所述第二引脚电连接。
2.根据权利要求1所述的高光效高显色性LED，其特征在于：
所述第一引脚的一端和所述第二引脚的一端分别通过所述支架碗杯的两侧固定在靠近所述凹陷腔的底部。
3.根据权利要求1所述的高光效高显色性LED，其特征在于：
第一层所述胶水荧光粉混合物为胶水红色荧光粉，第二层所述胶水荧光粉混合物为胶水黄色荧光粉混合物。
CN201410113450.1A 2014-03-21 2014-03-21 一种高光效高显色性led Pending CN103915552A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109920897A (zh) * 2019-01-25 2019-06-21 浙江英特来光电科技有限公司 一种smd led封胶方法
WO2020103671A1 (zh) * 2018-11-22 2020-05-28 杭州汉徽光电科技有限公司 植物补光用led光源及使用该光源的灯具

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US20040183085A1 (en) * 2003-01-27 2004-09-23 Tadahiro Okazaki Semiconductor light emitting device
CN101532643A (zh) * 2008-03-11 2009-09-16 鑫谷光电股份有限公司 一种低色温的暖白光发光装置及其制作方法
KR20130065098A (ko) * 2011-12-09 2013-06-19 엘지이노텍 주식회사 발광소자 패키지 및 이를 포함하는 조명시스템

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US20040183085A1 (en) * 2003-01-27 2004-09-23 Tadahiro Okazaki Semiconductor light emitting device
CN101532643A (zh) * 2008-03-11 2009-09-16 鑫谷光电股份有限公司 一种低色温的暖白光发光装置及其制作方法
KR20130065098A (ko) * 2011-12-09 2013-06-19 엘지이노텍 주식회사 발광소자 패키지 및 이를 포함하는 조명시스템

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020103671A1 (zh) * 2018-11-22 2020-05-28 杭州汉徽光电科技有限公司 植物补光用led光源及使用该光源的灯具
US11419278B2 (en) 2018-11-22 2022-08-23 HANGZHOU HANHUl OPTOELECTRONIC TECHNOLOGY CO., LTD. LED light source for supplemental lighting for plants and lamp with light source
CN109920897A (zh) * 2019-01-25 2019-06-21 浙江英特来光电科技有限公司 一种smd led封胶方法

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Application publication date: 20140709