CN103888086B - Self method of adjustment of electronic system, radio-frequency power amplifier and its bias point - Google Patents
Self method of adjustment of electronic system, radio-frequency power amplifier and its bias point Download PDFInfo
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- CN103888086B CN103888086B CN201210554761.2A CN201210554761A CN103888086B CN 103888086 B CN103888086 B CN 103888086B CN 201210554761 A CN201210554761 A CN 201210554761A CN 103888086 B CN103888086 B CN 103888086B
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Abstract
The invention discloses self method of adjustment of a kind of electronic system, radio-frequency power amplifier and its bias point, radio-frequency power amplifier includes bias circuit, output-stage circuit and dynamic bias voltage controlling circuit.Bias circuit reception system voltage, and the bias circuit provides operating voltage according to system voltage.Output-stage circuit receives operating voltage to be operated in operation bias point.Dynamic bias voltage controlling circuit receives operating voltage and exports offset voltage to bias circuit according to the change of operating voltage.When input power increases and declines operating voltage and cause to operate bias point skew, then bias circuit increases operating voltage to reply operation bias point according to the offset voltage received.
Description
Technical field
The present invention is related to a kind of radio-frequency power amplifier, and especially with regard to a kind of radio frequency for having self adjustment of bias point
Power amplifier.
Background technology
After world-wide web prosperity, people receive information with getting used to rapid, high volume, particularly in recent years without
The progress of line communication science and technology, personal mobile product, such as mobile phone, personal digital assistant product, with quite surprising speed
After popularization, it is desirable to grasp outside instant messages, it is also desirable to can have and be supported on instant line.Therefore, with reference to Internet
Network and the radio area network of radio communication (Wireless Local Area Network, WLAN) and the third generation (3G)/the 4th
Generation (4G) network is exactly a scheme for meeting the such demand of people.
Radio-frequency power amplifier plays the part of very important role in a communications system.In order to reach preferable power added effect
Rate (power-added efficiency, PAE), linear RF power amplifier would generally be inclined to AB generic operations (class AB
operation).In general, when RF input power increase, the average pressure drop meeting of the forward biased PN junction of amplifying transistor
Decline, and push radio-frequency power amplifier to class-b operation (class B operation) even C generic operations (class C
Operation) cause that the power output of amplifying transistor is changed into saturation and output signal graduates into non-linear.
In other words, in the transmitter, radio-frequency power amplifier is the element of most power consumption, its power added efficiency (power
Added efficiency, PAE) directly affect the time that battery can maintain.The Dc bias of AB classes can improve power amplifier
Power added efficiency because its have compared with low level stand bias current (quiescent current), stand bias current also
Bias current when i.e. input power is zero.However, when the power output of amplifier increases to a certain level (level), behaviour
Make in the load line (load line) of AB quasi-mode amplifiers possibly into cut-off region (cut off region), and then produce
Gain compression (gaincompression), this gain compression cause power output saturation (saturation).Because AB classes are amplified
The DC operation point of device is close to cut-off region, therefore, when the power output of class ab ammplifier increases to a certain level, this cut-off region
The gain compression mechanism in domain will limit the power gain (power gain) and power output of class ab ammplifier.
The content of the invention
It is an object of the invention to provide a kind of radio-frequency power amplifier, receives and amplifies radio-frequency input signals, radio frequency work(
Rate amplifier includes bias circuit, output-stage circuit and dynamic bias voltage controlling circuit.Bias circuit reception system voltage, and institute
State bias circuit and provide operating voltage according to system voltage.Output-stage circuit is electrically connected with bias circuit, the output-stage circuit
Operating voltage is received to be operated in operation bias point.Dynamic bias voltage controlling circuit receives operating voltage and according to operating voltage
Change exports offset voltage to bias circuit.When the input power increase of radio-frequency input signals declines operating voltage and caused
When operating bias point skew, the bias circuit increases operating voltage to reply operation bias according to the offset voltage received
Point.
In the one of embodiment of the present invention, bias circuit includes the first transistor, second transistor, reference current
Source, first resistor and second resistance.The base stage connection dynamic bias voltage controlling circuit and reception offset voltage of the first transistor, first
The emitter-base bandgap grading connection ground voltage of transistor.The collector of the base stage connection the first transistor of second transistor, the collection of second transistor
Pole connects system voltage.The collector of one end connection the first transistor of reference current source, the other end connection system of reference current source
System voltage, the reference current source provide reference current.The emitter-base bandgap grading of one end connection second transistor of first resistor, first resistor
The other end connection dynamic bias voltage controlling circuit.Second resistance one end connection second transistor emitter-base bandgap grading, second resistance it is another
One end connects dynamic bias voltage controlling circuit and the output operating voltage.The reference current is equal to the collector electricity of the first transistor
The summation of stream and the base current of second transistor.
In the one of embodiment of the present invention, when input power increases and declines operating voltage, the first transistor
Base stage receive offset voltage and cause base current and the collected current of the first transistor to decline accordingly, and then make the second crystal
The base current of pipe rises with emitter current, thereby increases operating voltage to reply operation bias point.
In the one of embodiment of the present invention, output-stage circuit includes third transistor.The base stage of third transistor connects
Receive operating voltage, the emitter-base bandgap grading connection ground voltage of third transistor, the collector connection system voltage of third transistor.
In the one of embodiment of the present invention, dynamic bias voltage controlling circuit includes 3rd resistor and the first electric capacity.3rd
One end of resistance is connected between bias circuit and output-stage circuit, and receives operating voltage.One end connection of first electric capacity
The other end of 3rd resistor, the other end connection ground voltage of the first electric capacity.
The embodiment of the present invention separately provides a kind of electronic system, and electronic system includes radio-frequency power amplifier and load.Radio frequency
Power amplifier receives radio-frequency input signals and output radio frequency output signal.Load coupled radio-frequency power amplifier, the load
Receive radio frequency output signal.When radio-frequency input signals increases, then radio-frequency power amplifier by offset voltage with stable operation
Bias point.
In the one of embodiment of the present invention, bias circuit includes the first transistor, second transistor, reference current
Source, first resistor and second resistance.The base stage connection dynamic bias voltage controlling circuit and reception offset voltage of the first transistor, first
The emitter-base bandgap grading connection ground voltage of transistor.The collector of the base stage connection the first transistor of second transistor, the collection of second transistor
Pole connects system voltage.The collector of one end connection the first transistor of reference current source, the other end connection system of reference current source
System voltage, the reference current source provide reference current.The emitter-base bandgap grading of one end connection second transistor of first resistor, first resistor
The other end connection dynamic bias voltage controlling circuit.Second resistance one end connection second transistor emitter-base bandgap grading, second resistance it is another
One end connects dynamic bias voltage controlling circuit and the output operating voltage.The reference current is equal to the collector electricity of the first transistor
The summation of stream and the base current of second transistor.
In the one of embodiment of the present invention, dynamic bias voltage controlling circuit includes 3rd resistor and the first electric capacity.3rd
One end of resistance is connected between bias circuit and output-stage circuit, and receives operating voltage.One end connection of first electric capacity
The other end of 3rd resistor, the other end connection ground voltage of the first electric capacity.
The embodiment of the present invention provides a kind of bias point self method of adjustment again, and self method of adjustment of bias point includes step such as
Under：There is provided by bias circuit reception system voltage and accordingly operating voltage；By output-stage circuit receive operating voltage and according to
This works in operation bias point；And operating voltage is received and according to its change output compensation by dynamic bias voltage controlling circuit
Voltage is with stable operation bias point.When operating voltage declines and causes to operate bias point skew, the bias circuit is according to institute
The offset voltage of reception increases operating voltage to reply operation bias point.
In summary, electronic system, radio-frequency power amplifier and its bias point that the embodiment of the present invention is proposed self are adjusted
Adjusting method, when the input power increases, the bias point that can take precautions against radio-frequency power amplifier enter cut-off region (cut off
Region the gain compression (gain compression) caused by), that is, being capable of dynamic control to avoid power output saturation
The operation bias point of radio-frequency power amplifier, so that operation bias point reduces the phenomenon offset with the change of input power.
Furthermore the embodiment of the present invention can improve the linearity of radio-frequency power amplifier transfer characteristic to reduce distorted signals, with offer
Bigger input power and output power range, to provide high efficiency running and high linearity power output, to meet system pair
The requirement of the linearity.
For the enabled feature and technology contents for being further understood that the present invention, refer to below in connection with the present invention specifically
Bright and accompanying drawing, but these explanations are only used for illustrating the present invention with institute's accompanying drawings, rather than scope of the presently claimed invention is made
Any limitation.
Brief description of the drawings
Explain the specific embodiment of the present invention with reference to alterations above, thereby can be more bright to the present invention
In vain, in the plurality of schema：
Fig. 1 is the block diagram according to the radio-frequency power amplifier of the embodiment of the present invention.
Fig. 2 is the physical circuit figure according to the radio-frequency power amplifier of the embodiment of the present invention.
Fig. 3 is according to the input power of the embodiment of the present invention and the simulation curve figure of operating voltage.
Fig. 4 is according to the input power of the embodiment of the present invention and the simulation curve figure of output current.
Fig. 5 is according to the input power of the embodiment of the present invention and the simulation curve figure of power gain.
Fig. 6 is the block diagram according to the electronic system of the embodiment of the present invention.
Fig. 7 is the flow chart according to self method of adjustment of the bias point of the embodiment of the present invention.
Wherein, description of reference numerals is as follows：
100、200：Radio-frequency power amplifier
110：Bias circuit
112：Reference current source
120：Output-stage circuit
130：Dynamic bias voltage controlling circuit
210：Input matching circuit
220：Output matching circuit
600：Electronic system
610：Radio-frequency power amplifier
620：Load
C1、C2、C3：Electric capacity
CV1、CV2、CV3、CV4、CV5、CV6：Curve
GND：Ground voltage
IB1、IB2、IB3：Base current
IC：Output current
IC1：Collected current
IE2：Emitter current
IREF：Reference current
L：Inductance
Q1~Q3：Transistor
R1、R2、R3：Resistance
RFIN：Radio-frequency input signals
RFOUT：Radio frequency output signal
S710~S730：Step
VB：Operating voltage
VBE1、VBE3：Base emitter voltage
VC：Offset voltage
VCC：System voltage
Embodiment
Various exemplary embodiments will be more fully described referring to alterations below, shown in alterations
Exemplary embodiments.However, concept of the present invention may embody in many different forms, and it should not be construed as limited by institute herein
The exemplary embodiments of elaboration.Specifically, there is provided this multiple exemplary embodiments make it that the present invention will be detailed and complete, and
The category of concept of the present invention will be fully passed on to those skilled in the art.In all schemas, Ceng Ji areas can be lavished praise on oneself in order to clear
Size and relative size.Similar numeral indicates similar component all the time.
Although it should be understood that may describe various elements using term first, second, third, etc. herein, this is multiple
Element should not be limited by these terms.This multiple term is to distinguish an element and another element.Therefore, be discussed herein below
One element can be described as teaching of second element without departing from concept of the present invention.As used herein, term " and/or " include phase
All combinations for listing any one of project and one or more of association.
This disclosure provides the radio-frequency power amplification that one of wireless communication system transmitting terminal is capable of active stable bias
Device, stablize the operation bias point of radio-frequency power amplifier by dynamic development adjustment, to avoid when the input power increases, making
Enter the gain compression (gaincompression) caused by cut-off region into operation bias point.In other words, this disclosure energy
It is enough that the power output of high efficiency running and high linearity is being provided, and bigger input power and output power range are provided, with symbol
The requirement that syzygy is united to linearity of radio-frequency power amplifier.In order to better understand this disclosure, provided below at least one
Embodiment discloses or taught the operation principles for the radio-frequency power amplifier for being capable of active stabilization bias point.
(embodiment of radio-frequency power amplifier)
Fig. 1 is refer to, Fig. 1 is the block diagram according to the radio-frequency power amplifier of the embodiment of the present invention.Such as Fig. 1 institutes
Show, radio-frequency power amplifier 100 includes bias circuit 110, output-stage circuit 120 and dynamic bias voltage controlling circuit 130.Output stage
Circuit 120 is electrically connected with bias circuit 110.Dynamic bias voltage controlling circuit 130 is electrically connected with bias circuit 110.
In the present embodiment, the reception system voltage VCC of bias circuit 110, and bias circuit 110 is according to system voltage
VCC provides operating voltage VB to output-stage circuit 120, so that output-stage circuit 120 is operated in an appropriate bias point.Output stage electricity
Road 120 receives operating voltage VB to be operated in the desired operation bias point (operation bias point) of designer.Dynamically
Bias control circuit 130 receives operating voltage VB and exports offset voltage VC to bias circuit according to operating voltage VB change
110.When radio-frequency input signals RFIN input power increase declines operating voltage VB and causes to operate bias point skew,
Then the bias circuit 110 increases operating voltage VB to reply operation bias point according to the offset voltage VC received.
Next to be taught, be the operation principle for further illustrating radio-frequency power amplifier 100.
Fig. 1 is continued referring to, in a wireless communication system, radio-frequency power amplifier 100 is used for strengthening transmitter
(transmitter) power output (output power), therefore radio-frequency power amplifier 100 must disappear in limited power
Under consumption, there is provided high efficiency operates and high linearity power output, will to the high linearity of radio-frequency power amplifier 100 to meet system
Ask.Under DC operation pattern, bias circuit 110 by the electric connection with system voltage VCC to produce an operating voltage VB,
And the operating voltage VB that radio-frequency power amplifier 100 is provided by bias circuit 110, so that radio-frequency power amplifier 100
Body works in operates bias point one.In alternate current operation pattern, output-stage circuit 120 receives and amplifies radio-frequency input signals
Radio frequency output signal RFOUT is exported after RFIN.However, when radio-frequency input signals RFIN input power is increasing, then it is defeated
Decreasing phenomenon can be produced by going out the operating voltage of grade circuit 120, and then the operation bias point of output-stage circuit 120 is entered cut-off
Region and cause gain compression.And this gain compression can cause the power output saturation of overall radio-frequency power amplifier 100, and then
Reduce the operating efficiency and the linearity of radio-frequency power amplifier 100.
Therefore, in the present embodiment, radio-frequency power amplifier 100 is exported by dynamic bias voltage controlling circuit 130 come stable
The operation bias point of level circuit 120.When operating voltage VB successively decreases with the increase of input power, then dynamic biasing control is electric
Road 130 can sense operating voltage VB changes and further produce an offset voltage VC and adjust bias circuit to bias circuit 110
110 operating voltages exported.Bias circuit 110 can increase operating voltage VB to return according to received offset voltage VC
The operation bias point of multiple output-stage circuit 120.
Accordingly, by above-mentioned bias point dynamic adjustment mechanism, the operation bias point of radio-frequency power amplifier 100 would not
It is biased into the increase of the power output of radio-frequency input signals to cut-off region, and then produces the phenomenon of gain compression.Change
Sentence is talked about, and this disclosure automatically can dynamically adjust the operation bias point of radio-frequency power amplifier 100, so that operation biases
Point reduces the phenomenon offset with the change of input power.The embodiment of the present invention can improve 100 turns of radio-frequency power amplifier
The linearity of characteristic is changed to reduce distorted signals, to provide high efficiency running and high linearity power output, to meet system
Requirement to the linearity.
In order to which the operation workflow of radio-frequency power amplifier 100 of the present invention is described in more detail, will lift below multiple
At least one of embodiment is further described.
In ensuing multiple embodiments, the part different from above-mentioned Fig. 1 embodiments, and remaining clipped will be described
It is identical with the part of above-mentioned Fig. 1 embodiments.In addition, to illustrate conventionally, similar reference numeral or label instruction are similar
Element.
(another embodiment of radio-frequency power amplifier)
Fig. 2 is refer to, Fig. 2 is the physical circuit figure according to the radio-frequency power amplifier of the embodiment of the present invention.With above-mentioned Fig. 1
Unlike embodiment, in the present embodiment, bias circuit 110 includes the first transistor Q1, second transistor Q2, reference current
Source 112, first resistor R1 and second resistance R2.Output-stage circuit 120 includes third transistor Q3.Dynamic bias voltage controlling circuit
130 include 3rd resistor R3 and the first electric capacity C1.In the present embodiment, transistor Q1~Q3 is NPN transistor, and in another reality
Apply in example, transistor Q1~Q3 is field-effect transistor (Field Effect Transistor.FET), heterojunction bipolar transistor
(Heterojunction Bipolar Transistor, HBT) and bipolarity field-effect transistor (Bipolar FieldEffect
Transistor, BiFET) one of which tool GaAs (GaAs), the transistor of silicon (Si) or SiGe (SiGe) technique carry out structure
Into not being limited with the present embodiment.
The first transistor Q1 base stage connection dynamic bias voltage controlling circuit 130 and reception offset voltage VC, the first transistor
Q1 emitter-base bandgap grading connection ground voltage GND.Second transistor Q2 base stage connection the first transistor Q1 collector, second transistor Q2
Collector connection system voltage VCC.One end connection the first transistor Q1 of reference current source 112 collector, reference current source 112
Other end connection system voltage VCC, the reference current source 112 provides reference current IREF.First resistor R1 one end connects
Connect second transistor Q2 emitter-base bandgap grading, first resistor R1 other end connection dynamic bias voltage controlling circuit 130.The one of second resistance R2
End connection second transistor Q2 emitter-base bandgap grading, second resistance R2 other end connection dynamic bias voltage controlling circuit 130 and output services
Voltage VB.Third transistor Q3 base stage receives operating voltage VB, third transistor Q3 emitter-base bandgap grading connection ground voltage GND, and
And third transistor Q3 collector connection system voltage VCC.The first electric capacity C1 one end connection 3rd resistor R3 other end, the
One electric capacity C1 other end connection ground voltage GND.
Subsidiary one is mentioned that, in the transistor circuit topology framework disclosed in Fig. 2, if third transistor Q3 emitter-base bandgap grading
When area is in the case of N times of the first transistor Q1 emitter area, when first resistor R1 resistance value is N times of second resistance R2
Resistance value, then third transistor Q3 output current IC is N times of reference current IREF, and wherein N is more than 1.Designer's energy
The enough numerical value that N is determined according to circuit design demand or practical application request.Furthermore in the present embodiment, output-stage circuit 120
Input and output end there is an input matching circuit 210 and output matching circuit 220, imitated with providing preferable power match
Can, wherein input matching circuit 210 is electrically connected to third transistor Q3 base terminal and to receive radio-frequency input signals
RFIN, output matching circuit 220 are electrically connected to third transistor Q3 collector terminal and to export radio frequency output signal
RFOUT。
Next to be taught, be the operation principle for further illustrating radio-frequency power amplifier 200.
Fig. 2 is continued referring to, in a wireless communication system, radio-frequency power amplifier 200 is all most critical all the time
One of core parts, its linearity have conclusive influence with efficiency of the power efficiency for wireless communication system with efficiency.
The framework of radio-frequency power amplifier 200 mainly amplifies by signal of active member, then input of arranging in pairs or groups, the match circuit of output end
The simple amplifier formed, mainly it is responsible for the modulating signal that will be transmitted and brings up to appropriate high level, make to send out
When signal after going reaches receiving terminal via radio wave propagation medium, its signal intensity is enough to provide receiving terminal recovering signal.
In the present embodiment, under DC operation pattern, by the first transistor Q1, second transistor Q2, first resistor R1,
Second resistance R2 can produce an operating voltage VB to third transistor Q3 with the bias circuit 110 that reference current source 112 is formed
Base stage, it is noted that now operating voltage VB DC voltage level be equal to third transistor Q3 base emitter voltage
VBE3.After alternate current operation pattern is entered, third transistor Q3 can receive radio-frequency input signals RFIN and be amplified with defeated
Go out a radio frequency output signal RFOUT, when radio-frequency input signals RFIN input power is stepped up, then can cause the 3rd crystal
Pipe Q3 base emitter voltage VBE3 decline (base current IB3 can also decline) therewith and operating voltage VB also can synchronously under
Drop, and then cause third transistor Q3 operation bias point to offset in a transient process.And the present embodiment passes through dynamic biasing
Control circuit 130 lifts operating voltage VB to reply third transistor Q3 operation bias point.Furthermore, it is understood that dynamic biasing
The change of 3rd resistor R3 meeting responsive operation voltages VB in control circuit 130, and then produced in the 3rd resistor R3 other end
One offset voltage VC is simultaneously sent to the first transistor Q1.It is noted that offset voltage VC DC voltage level is equal to first
Transistor Q1 base emitter voltage VBE1 (base current IB1 can also decline).
Because collected current is equal to β times of base current, so when the first transistor Q1 base current IB1 declines,
The first transistor Q1 collected current IC1 can also decline.The reference current IREF of definite value situation is provided in reference current source 112
Under, that is, reference voltage IREF is equal to collected current IC1 and base current IB2 summation, wherein β is the first transistor Q1 electricity
Flow enhancement (current gain).When the first transistor Q1 collected current IC1 declines, then second transistor Q2 base stage is electric
Stream IB2 can rise.Then, because second transistor Q2 base current IB2 rises, so second transistor Q2 emitter current
IE2 can rise.Then, emitter current IE2 portion of electrical current can flow through second resistance R2, and then lift bias circuit 110 and passed
Deliver to third transistor Q3 operating voltage VB.Hold above-mentioned, moved by the negative feedback mechanism inside radio-frequency power amplifier 200
State adjusts operating voltage VB to maintain high linearity, that is, radio-frequency power amplifier 200 still can under the change of input power
The operation bias point of enough stable output-stage circuit 120.
Next to be illustrated, be to provide at least one simulation curve figure on Fig. 2 embodiments.
Referring to Fig. 2 and Fig. 3, Fig. 3 is the simulation song of the input power and operating voltage according to the embodiment of the present invention
Line chart.In the graph of figure 3, trunnion axis is input power, unit dBm；Vertical axis is operating voltage, and unit is volt,
Wherein curve CV1 is the simulation curve of Fig. 2 embodiments, and curve CV2 is the simulation that dynamic bias voltage controlling circuit 130 is free of in Fig. 2
Curve.From the figure 3, it may be seen that when being incremented by radio-frequency input signals RFIN input power, the Amplitude Ratio curve of curve CV1 declines
The amplitude that CV2 declines is few, therefore radio-frequency power amplifier 200 is in the case of with dynamic bias voltage controlling circuit 130, Neng Gou great
Width reduces the possibility that operating voltage point enters cut-off region.Then, the present embodiment provides another on input power and output again
The simulation curve of electric current further illustrates the effect of this disclosure can reach.Referring to Fig. 2 and Fig. 4, Fig. 4 is
Input power according to embodiments of the present invention and the simulation curve figure of output current.In Fig. 4 curve map, trunnion axis is input
Power, unit dBm；Vertical axis is output current, and unit is ampere, and wherein curve CV3 is the simulation curve of Fig. 2 embodiments,
Curve CV4 is the simulation curve that dynamic bias voltage controlling circuit 130 is free of in Fig. 2.As shown in Figure 4, when in radio-frequency input signals
When RFIN input power is incremented by, the amplitude for the Amplitude Ratio curve CV4 risings that curve CV3 rises is more, therefore, inclined with dynamic
The radio-frequency power amplifier 200 of pressure control circuit is able to maintain that its operating efficiency and high linearity.Finally, the present embodiment separately provides
The effect of on the simulation curve figure of input power and power gain to illustrate further this disclosure.Referring to figure
2 and Fig. 5, Fig. 5 be according to the input power of the embodiment of the present invention and the simulation curve figure of power gain.In Fig. 5 curve map,
Trunnion axis is input power, unit dBm；Vertical axis is power gain (power gain), unit dB, wherein curve CV5
For the simulation curve of Fig. 2 embodiments, curve CV6 is the simulation curve that dynamic bias voltage controlling circuit 130 is free of in Fig. 2.Here, palpus
First illustrate, power gain is third transistor Q3 power output divided by third transistor Q3 input power.Can by Fig. 5
Know, when being incremented by radio-frequency input signals RFIN input power, curve CV5 can remain preferable and stable than curve CV6
Power gain, therefore when rf power signal RFIN input power is incremented by, the radio-frequency power amplifier 200 of the present embodiment according to
So high linearity is able to maintain that to meet the requirement of system.
Subsidiary one is mentioned that, in one embodiment, output-stage circuit 120 is with more inductance L, electric capacity C2 and C3.Electric capacity C2
One end coupling third transistor Q3 base stage, electric capacity C2 other end coupling radio-frequency input signals RFIN.Inductance L coupling systems
Between voltage VCC and third transistor Q3 collector.Electric capacity C3 one end is coupled to third transistor Q3 collector, electric capacity C3
Other end output radio frequency output signal RFOUT.
When radio-frequency power amplifier 200 not yet starts to receive radio-frequency input signals RFIN, inductance L can be in direct current signal
Existing low impedance state, such as short circuit, and high impedance status, such as open circuit can be then presented in electric capacity C2, C3 to direct current signal.Work as radio frequency
When power amplifier 200 starts to receive radio-frequency input signals RFIN, high impedance status can be presented in inductance L to high-frequency signal, such as
Open circuit, and low impedance state, such as short circuit can be then presented in electric capacity C2, C3 to high-frequency signal.Accordingly, radio-frequency power amplifier 200
Can smoothly it be operated in DC operation pattern and alternate current operation pattern.
(embodiment of electronic system)
Fig. 6 is refer to, Fig. 6 is the block diagram according to the electronic system of the embodiment of the present invention.Electronic system 600 includes
Radio-frequency power amplifier 610 and load 620.Radio-frequency power amplifier 610 receives radio-frequency input signals RFIN and output radio frequency is defeated
Go out signal RFOUT to load 620, that is, radio-frequency power amplifier 610 can provide a stable output after coupling system voltage
Power extremely loads 620.Radio-frequency power amplifier 610 can be above-mentioned Fig. 1 and the radio-frequency power amplifier 100 in Fig. 2 embodiments
With one of 200, and to provide stable power output to load.Electronic system 600 can be various types of electricity
System in sub-device, electronic installation can be such as hand-held device or running gear.
(embodiment of self method of adjustment of bias point)
Fig. 7 is refer to, Fig. 7 is the flow chart according to self method of adjustment of the bias point of the embodiment of the present invention.Described in this example
Method can shown in Fig. 1 or Fig. 2 radio-frequency power amplifier perform, therefore please in the lump according to Fig. 1 or Fig. 2 with profit understand.Penetrate
Self method of adjustment of the bias point of frequency power amplifier comprises the following steps：Carry by bias circuit reception system voltage and accordingly
For operating voltage (step S710).Operating voltage is received by output-stage circuit and works in operation bias point (step accordingly
S720).Operating voltage is received by dynamic bias voltage controlling circuit and biased according to its change output offset voltage with stable operation
Point (step S730).When operating voltage declines and causes to operate bias point skew, bias circuit is according to the compensation electricity received
Press to increase operating voltage to reply operation bias point.
On the bias point of radio-frequency power amplifier self method of adjustment each step correlative detail in above-mentioned Fig. 1~figure
2 embodiments have described in detail, pardon not repeating herein.It should be noted that, each steps of Fig. 7 embodiments is only for convenience of description herein
Need, order of the embodiment of the present invention not using each step to each other is used as the restrictive condition for implementing each embodiment of the present invention.
(possibility effect of embodiment)
In summary, electronic system, radio-frequency power amplifier and its bias point that the embodiment of the present invention is provided self are adjusted
Adjusting method, when the input power increase of radio-frequency input signals, the operation bias point that can take precautions against radio-frequency power amplifier enters
Gain compression (gaincompression) caused by cut-off region (cut-off region) is to avoid power output saturation, also
It is capable of the operation bias point of dynamic control radio-frequency power amplifier, so that operation bias point is reduced with the change of input power
And the phenomenon offset.
An at least embodiment, can improve radio-frequency power amplifier transfer characteristic in the multiple embodiments of this disclosure
The linearity is to reduce distorted signals, to provide high efficiency running and high linearity power output, to meet system to the linearity
Requirement.
Embodiments of the invention are the foregoing is only, it is simultaneously not used to the scope of the patent claims of the limitation present invention.
Claims (8)
1. a kind of radio-frequency power amplifier, receive and amplify radio-frequency input signals, it is characterised in that the radio-frequency power amplifier bag
Include：
Bias circuit, reception system voltage, and the bias circuit provide operating voltage according to the system voltage；
Output-stage circuit, the bias circuit is electrically connected with, the output-stage circuit receives the operating voltage to be operated in operation bias
Point；And
Dynamic bias voltage controlling circuit, receive the operating voltage and according to the change of the operating voltage export offset voltage it is inclined to this
Volt circuit,
Wherein, when the input power increase of the radio-frequency input signals declines the operating voltage and causes the operation bias point inclined
During shifting, the bias circuit increases the operating voltage to reply the operation bias point according to the offset voltage received；
The bias circuit includes：
The first transistor, its base stage connect the dynamic bias voltage controlling circuit and receive the offset voltage, its emitter-base bandgap grading connection ground connection electricity
Pressure；
Second transistor, its base stage connect the collector of the first transistor, and its collector connects the system voltage；
Reference current source, its one end connect the collector of the first transistor, and its other end connects the system voltage, the reference current
Source provides reference current；
First resistor, its one end connect the emitter-base bandgap grading of the second transistor, and its other end connects the dynamic bias voltage controlling circuit；And
Second resistance, its one end connect the emitter-base bandgap grading of the second transistor, and its other end connects the dynamic bias voltage controlling circuit and defeated
Go out the operating voltage,
Wherein the reference current is equal to the summation of the collected current of the first transistor and the base current of the second transistor；
Wherein the dynamic bias voltage controlling circuit includes：
3rd resistor, its one end are connected between the bias circuit and the output-stage circuit, and receive the operating voltage.
2. radio-frequency power amplifier as claimed in claim 1, it is characterised in that make the work electric when the input power increases
During drops, the base stage of the first transistor receives the offset voltage and causes the base current and collection of the first transistor accordingly
Electrode current declines, and then the base current of the second transistor is increased with emitter current, thereby come increase the operating voltage with
Reply the operation bias point.
3. radio-frequency power amplifier as claimed in claim 1, it is characterised in that the output-stage circuit includes：
Third transistor, its base stage receive the operating voltage, and its emitter-base bandgap grading connects the ground voltage, and its collector connects system electricity
Pressure.
4. the radio-frequency power amplifier as described in claim 1, it is characterised in that the dynamic bias voltage controlling circuit separately includes：
First electric capacity, its one end connect the other end of the 3rd resistor, and its other end connects the ground voltage.
5. a kind of electronic system, it is characterised in that the electronic system includes：
Radio-frequency power amplifier as claimed in claim 1, the radio-frequency power amplifier receives radio-frequency input signals and output is penetrated
Frequency output signal；And
Load, couples the radio-frequency power amplifier, the load-receipt radio frequency output signal,
Wherein when the radio-frequency input signals increases, then the radio-frequency power amplifier is inclined to stablize the operation by the offset voltage
Pressure point.
6. electronic system as claimed in claim 5, it is characterised in that make the operating voltage wherein when the input power increases
During decline, the base stage of the first transistor receives the offset voltage and causes the base current and collector of the first transistor accordingly
Electric current declines, and then the base current of the second transistor is increased with emitter current, thereby increases the operating voltage to return
The multiple operation bias point.
7. electronic system as claimed in claim 5, it is characterised in that the dynamic bias voltage controlling circuit separately includes：
First electric capacity, its one end connect the other end of the 3rd resistor, and its other end connects the ground voltage.
8. self method of adjustment of a kind of bias point, it is characterised in that self method of adjustment of the bias point includes：
There is provided by bias circuit reception system voltage and accordingly operating voltage；
The operating voltage is received by output-stage circuit and works in operation bias point accordingly；And
By dynamic bias voltage controlling circuit receive the operating voltage and according to its change output offset voltage it is inclined to stablize the operation
Pressure point；
Wherein when the input power increases and declines the operating voltage and cause the operation bias point to offset, the bias circuit
The operating voltage is increased to reply the operation bias point according to the offset voltage received,
Wherein self method of adjustment of the bias point is used for radio-frequency power amplifier as claimed in claim 1.
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| CN111614327B (en) * | 2019-02-22 | 2023-03-24 | 瑞昱半导体股份有限公司 | Radio frequency amplifier with adaptive power supply |
| CN113534018A (en) * | 2020-04-14 | 2021-10-22 | 通用电气精准医疗有限责任公司 | Linear compensation method and device of radio frequency amplifier and magnetic resonance imaging system |
| TWI714515B (en) * | 2020-06-17 | 2020-12-21 | 立積電子股份有限公司 | Temperature compensation circuit for power amplifier |
| CN112803900B (en) * | 2021-03-30 | 2021-07-16 | 广州慧智微电子有限公司 | Bias circuit and radio frequency power amplifier |
| CN113595515B (en) * | 2021-09-29 | 2022-01-04 | 杭州中科微电子有限公司 | High-linearity biasing circuit applied to radio frequency amplifier |
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| CN1983802A (en) * | 2005-12-16 | 2007-06-20 | 联发科技股份有限公司 | RF amplifier circuit and operation method thereof |
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| US6300837B1 (en) * | 2000-03-28 | 2001-10-09 | Philips Electronics North America Corporation | Dynamic bias boosting circuit for a power amplifier |
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