CN103888086A - Electronic system, radio frequency power amplifier and bias point self-adjusting method of radio frequency power amplifier - Google Patents
Electronic system, radio frequency power amplifier and bias point self-adjusting method of radio frequency power amplifier Download PDFInfo
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- CN103888086A CN103888086A CN201210554761.2A CN201210554761A CN103888086A CN 103888086 A CN103888086 A CN 103888086A CN 201210554761 A CN201210554761 A CN 201210554761A CN 103888086 A CN103888086 A CN 103888086A
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Abstract
The invention discloses an electronic system, a radio frequency power amplifier and a bias point self-adjusting method of the radio frequency power amplifier. The radio frequency power amplifier comprises a biasing circuit, an output level circuit and a dynamic biasing control circuit. The biasing circuit receives a system voltage, and provides working voltage according to the system voltage. The output level circuit receives the working voltage to work at an operating bias point. The dynamic biasing control circuit receives the working voltage and outputs a compensating voltage to the biasing circuit according to the change of the working voltage. When the bias point is shifted caused by the reduction of the working voltage due to the increase of the input power, the biasing circuit promotes the working voltage to restore the operating bias point according to the received compensating voltage.
Description
Technical field
The present invention has about a kind of radio-frequency power amplifier, and the radio-frequency power amplifier of particularly adjusting about a kind of tool bias point oneself.
Background technology
After world-wide web prosperity, people get used to rapid, high volume and receive information, the particularly progress of radio communication science and technology in recent years, individual's mobile product, as the product such as mobile phone, personal digital assistant, after universal with quite surprising speed, people wish to grasp outside instant messages, also wish can have on instant line to support.Therefore, meet just a scheme of the such demand of people in conjunction with the radio area network (Wireless Local Area Network, WLAN) of world-wide web and radio communication and the third generation (3G)/4th generation (4G) network.
Radio-frequency power amplifier is played the part of very important role in communication system.In order to reach good power added efficiency (power-added efficiency, PAE), linear RF power amplifier can be partial to AB generic operation (class AB operation) conventionally.In general, in the time that radio-frequency (RF) input power increases, the average pressure drop of the PN junction of forward setovering of amplifier transistor can decline, and pushes radio-frequency power amplifier to class-b operation (class B operation) or even C generic operation (class C operation) and cause the power output of amplifier transistor to become saturated and output signal graduate into non-linear.
In other words, in reflector, radio-frequency power amplifier is the element of power consumption, and its power added efficiency (power added efficiency, PAE) directly affects the time that battery can maintain.The direct current (DC) bias of AB class can be improved the power added efficiency of power amplifier, leaves standstill bias current (quiescent current) because it has compared with low level, and standing bias current that is input power are the bias current of 1 o'clock.But, in the time that the power output of amplifier is increased to a certain level (level), the load line (load line) that operates in AB quasi-mode amplifier may enter cut-off region (cut off region), and then producing gain compression (gaincompression), this gain compression causes power output saturated (saturation).Because the DC operation point of class ab ammplifier approaches cut-off region, therefore, in the time that the power output of class ab ammplifier is increased to a certain level, the gain compression mechanism of this cut-off region is by power gain (power gain) and the power output of restriction class ab ammplifier.
Summary of the invention
The object of the present invention is to provide a kind of radio-frequency power amplifier, receive and amplify radio-frequency input signals, radio-frequency power amplifier comprises bias circuit, output-stage circuit and dynamic bias voltage controlling circuit.Bias circuit receiving system voltage, and described bias circuit provides operating voltage according to system voltage.Output-stage circuit is electrically connected bias circuit, and described output-stage circuit receives operating voltage to be operated in operation bias point.Dynamic bias voltage controlling circuit receives operating voltage and exports bucking voltage to bias circuit according to the variation of operating voltage.When the input power of radio-frequency input signals increases and operating voltage declined and while causing operating bias point skew, described bias circuit increases operating voltage to reply operation bias point according to received bucking voltage.
In one of them embodiment of the present invention, bias circuit comprises the first transistor, transistor seconds, reference current source, the first resistance and the second resistance.The base stage of the first transistor connects dynamic bias voltage controlling circuit and receives bucking voltage, and the emitter-base bandgap grading of the first transistor connects earthed voltage.The base stage of transistor seconds connects the collector of the first transistor, the collector connected system voltage of transistor seconds.One end of reference current source connects the collector of the first transistor, the other end connected system voltage of reference current source, and described reference current source provides reference current.One end of the first resistance connects the emitter-base bandgap grading of transistor seconds, and the other end of the first resistance connects dynamic bias voltage controlling circuit.One end of the second resistance connects the emitter-base bandgap grading of transistor seconds, and the other end of the second resistance connects dynamic bias voltage controlling circuit and exports described operating voltage.Described reference current equals the summation of the collected current of the first transistor and the base current of transistor seconds.
In one of them embodiment of the present invention, while operating voltage being declined when input power increase, the base stage of the first transistor receives bucking voltage and makes accordingly the base current of the first transistor and collected current decline, and then make the base current of transistor seconds and emitter current increase, increase by this operating voltage to reply operation bias point.
In one of them embodiment of the present invention, output-stage circuit comprises the 3rd transistor.The 3rd transistorized base stage receives operating voltage, and the 3rd transistorized emitter-base bandgap grading connects earthed voltage, the 3rd transistorized collector connected system voltage.
In one of them embodiment of the present invention, dynamic bias voltage controlling circuit comprises the 3rd resistance and the first electric capacity.One end of the 3rd resistance is connected between bias circuit and output-stage circuit, and receives operating voltage.One end of the first electric capacity connects the other end of the 3rd resistance, and the other end of the first electric capacity connects earthed voltage.
The embodiment of the present invention separately provides a kind of electronic system, and electronic system comprises radio-frequency power amplifier and load.Radio-frequency power amplifier received RF input signal and output radio frequency output signal.Load coupled radio-frequency power amplifier, described load received RF output signal.In the time that radio-frequency input signals increases, radio-frequency power amplifier by bucking voltage with stable operation bias point.
In one of them embodiment of the present invention, bias circuit comprises the first transistor, transistor seconds, reference current source, the first resistance and the second resistance.The base stage of the first transistor connects dynamic bias voltage controlling circuit and receives bucking voltage, and the emitter-base bandgap grading of the first transistor connects earthed voltage.The base stage of transistor seconds connects the collector of the first transistor, the collector connected system voltage of transistor seconds.One end of reference current source connects the collector of the first transistor, the other end connected system voltage of reference current source, and described reference current source provides reference current.One end of the first resistance connects the emitter-base bandgap grading of transistor seconds, and the other end of the first resistance connects dynamic bias voltage controlling circuit.One end of the second resistance connects the emitter-base bandgap grading of transistor seconds, and the other end of the second resistance connects dynamic bias voltage controlling circuit and exports described operating voltage.Described reference current equals the summation of the collected current of the first transistor and the base current of transistor seconds.
In one of them embodiment of the present invention, dynamic bias voltage controlling circuit comprises the 3rd resistance and the first electric capacity.One end of the 3rd resistance is connected between bias circuit and output-stage circuit, and receives operating voltage.One end of the first electric capacity connects the other end of the 3rd resistance, and the other end of the first electric capacity connects earthed voltage.
The embodiment of the present invention provides a kind of bias point oneself method of adjustment again, and bias point oneself method of adjustment comprises that step is as follows: by bias circuit receiving system voltage and operating voltage is provided accordingly; Receive operating voltage and work in accordingly operation bias point by output-stage circuit; And, receive operating voltage and change output bucking voltage with stable operation bias point according to it by dynamic bias voltage controlling circuit.While causing operating bias point skew when operating voltage decline, described bias circuit increases operating voltage to reply operation bias point according to received bucking voltage.
In sum, electronic system, radio-frequency power amplifier and bias point oneself method of adjustment thereof that the embodiment of the present invention proposes, in the time that input power increases, the bias point that can take precautions against radio-frequency power amplifier enters cut-off region (cut off region) caused gain compression (gain compression) to avoid power output saturated, that is can dynamically control the operation bias point of radio-frequency power amplifier, so that operation bias point reduces the phenomenon being offset along with the change of input power.Moreover, the embodiment of the present invention can be improved the linearity of radio-frequency power amplifier transfer characteristic to reduce distorted signals, with larger input power and output power range are provided, to high efficiency running and high linearity power output are provided, meet the requirement of system to the linearity.
For enabling further to understand feature of the present invention and technology contents, refer to following about detailed description of the present invention and accompanying drawing, but these explanations and appended graphic the present invention that are only used for illustrating but not are done any restriction to claim scope of the present invention.
Brief description of the drawings
Explain specific embodiments of the invention with reference to alterations above, by this can be more clear to the present invention, the plurality of graphic in:
Fig. 1 is the block schematic diagram according to the radio-frequency power amplifier of the embodiment of the present invention.
Fig. 2 is the physical circuit figure according to the radio-frequency power amplifier of the embodiment of the present invention.
Fig. 3 is the simulation curve figure according to the input power of the embodiment of the present invention and operating voltage.
Fig. 4 is the simulation curve figure according to the input power of the embodiment of the present invention and output current.
Fig. 5 is the simulation curve figure according to the input power of the embodiment of the present invention and power gain.
Fig. 6 is the block schematic diagram according to the electronic system of the embodiment of the present invention.
Fig. 7 is according to the flow chart of the bias point oneself method of adjustment of the embodiment of the present invention.
Wherein, description of reference numerals is as follows:
100,200: radio-frequency power amplifier
110: bias circuit
112: reference current source
120: output-stage circuit
130: dynamic bias voltage controlling circuit
210: input matching circuit
220: output matching circuit
600: electronic system
610: radio-frequency power amplifier
620: load
C1, C2, C3: electric capacity
CV1, CV2, CV3, CV4, CV5, CV6: curve
GND: earthed voltage
IB1, IB2, IB3: base current
IC: output current
IC1: collected current
IE2: emitter current
IREF: reference current
L: inductance
Q1～Q3: transistor
R1, R2, R3: resistance
RFIN: radio-frequency input signals
RFOUT: radio frequency output signal
S710～S730: step
VB: operating voltage
VBE1, VBE3: base emitter voltage
VC: bucking voltage
VCC: system voltage
Embodiment
Below describing more fully various exemplary embodiments referring to alterations, in alterations, show some exemplary embodiments.But concept of the present invention may be with many multi-form embodiments, and should not be construed as and be limited to the exemplary embodiments set forth herein.Definite, provide these multiple exemplary embodiments to make the present invention will be for detailed and complete, and will fully pass on the category of concept of the present invention to those skilled in the art.All graphic in, can be for clear and lavish praise on oneself size and the relative size in Ceng Ji district.Similar numeral is indicated like all the time.
Although should be understood that herein and may describe various elements by term first, second, third, etc., these multiple elements are not limited by these terms should.These multiple terms are to distinguish an element and another element.Therefore the first element of, below discussing can be described as the second element and does not depart from the teaching of concept of the present invention.As used herein, term " and/or " comprise any one and one or many person's all combinations in project of listing that are associated.
This disclosure provides the radio-frequency power amplifier that one of wireless communication system transmitting terminal can active stable bias voltage, stablize the operation bias point of radio-frequency power amplifier by dynamic development adjustment, to avoid in the time that input power increases, cause operation bias point to enter the caused gain compression in cut-off region (gaincompression).In other words, this disclosure can be in the power output that high efficiency running and high linearity are provided, and larger input power and output power range are provided, to meet the requirement of system to linearity of radio-frequency power amplifier.In order to better understand this disclosure, below will provide at least one embodiment to disclose or teaching can initiatively be stablized the operation principles of the radio-frequency power amplifier of bias point.
(embodiment of radio-frequency power amplifier)
Please refer to Fig. 1, Fig. 1 is the block schematic diagram according to the radio-frequency power amplifier of the embodiment of the present invention.As shown in Figure 1, radio-frequency power amplifier 100 comprises bias circuit 110, output-stage circuit 120 and dynamic bias voltage controlling circuit 130.Output-stage circuit 120 is electrically connected bias circuit 110.Dynamic bias voltage controlling circuit 130 is electrically connected bias circuit 110.
In the present embodiment, bias circuit 110 receiving system voltage VCC, and bias circuit 110 provides operating voltage VB to output-stage circuit 120 according to system voltage VCC, so that output-stage circuit 120 operates in a suitable bias point.Output-stage circuit 120 receives operating voltage VB to be operated in the desired operation bias point of designer (operation bias point).Dynamic bias voltage controlling circuit 130 receives operating voltage VB and exports bucking voltage VC to bias circuit 110 according to the variation of operating voltage VB.When the input power of radio-frequency input signals RFIN increases and operating voltage VB declined and while causing operating bias point skew, described bias circuit 110 increases operating voltage VB to reply operation bias point according to received bucking voltage VC.
Next wanting teaching, is the operation principle that further illustrates radio-frequency power amplifier 100.
Continue referring to Fig. 1, in wireless communication system, radio-frequency power amplifier 100 is used for strengthening the power output (output power) of reflector (transmitter), therefore radio-frequency power amplifier 100 must be under limited power consumption, high efficiency running and high linearity power output are provided, meet system to radio-frequency power amplifier 100 high linearity requirements.Under DC operation pattern, bias circuit 110 by with the electric connection of system voltage VCC to produce an operating voltage VB, and the operating voltage VB that radio-frequency power amplifier 100 provides by bias circuit 110, so that radio-frequency power amplifier 100 itself works in an operation bias point.In the time of alternate current operation pattern, output-stage circuit 120 receive and amplify radio-frequency input signals RFIN after export radio frequency output signal RFOUT.But in the time that the input power of radio-frequency input signals RFIN is increasing, the operating voltage of output-stage circuit 120 can produce decreasing phenomenon, and then makes the operation bias point of output-stage circuit 120 enter into cut-off region and cause gain compression.And this gain compression can cause the power output of overall radio-frequency power amplifier 100 saturated, and then operating efficiency and the linearity of reduction radio-frequency power amplifier 100.
Therefore, in the present embodiment, radio-frequency power amplifier 100 is stablized the operation bias point of output-stage circuit 120 by dynamic bias voltage controlling circuit 130.In the time that operating voltage VB successively decreases along with the increase of input power, dynamic bias voltage controlling circuit 130 is understood sensing operating voltage VB variation and is further produced the operating voltage that a bucking voltage VC is exported to adjust bias circuit 110 to bias circuit 110.Bias circuit 110 can increase operating voltage VB to reply the operation bias point of output-stage circuit 120 according to received bucking voltage VC.
Accordingly, by above-mentioned bias point dynamic adjustment mechanism, the operation bias point of radio-frequency power amplifier 100 just can not be offset and enter to cut-off region along with the increase of the power output of radio-frequency input signals, and then produces the phenomenon of gain compression.In other words, this disclosure can automatically dynamically be adjusted the operation bias point of radio-frequency power amplifier 100, so that operation bias point reduces the phenomenon being offset along with the change of input power.The embodiment of the present invention can be improved the linearity of radio-frequency power amplifier 100 transfer characteristics to reduce distorted signals, to high efficiency running and high linearity power output are provided, meets the requirement of system to the linearity.
In order to illustrate in greater detail the operation workflow of radio-frequency power amplifier 100 of the present invention, below by for one of being at least further described in multiple embodiment.
In ensuing multiple embodiment, description is different to the part of above-mentioned Fig. 1 embodiment, and all the other clippeds are identical with the part of above-mentioned Fig. 1 embodiment.In addition,, for the purpose of facility is described, similar reference number or label are indicated similar element.
(another embodiment of radio-frequency power amplifier)
Please refer to Fig. 2, Fig. 2 is the physical circuit figure according to the radio-frequency power amplifier of the embodiment of the present invention.Different from above-mentioned Fig. 1 embodiment, in the present embodiment, bias circuit 110 comprises the first transistor Q1, transistor seconds Q2, reference current source 112, the first resistance R 1 and the second resistance R 2.Output-stage circuit 120 comprises the 3rd transistor Q3.Dynamic bias voltage controlling circuit 130 comprises the 3rd resistance R 3 and the first capacitor C 1.In the present embodiment, transistor Q1～Q3 is NPN transistor, and in another embodiment, transistor Q1～Q3 is field-effect transistor (Field Effect Transistor.FET), heterojunction bipolar transistor (Heterojunction Bipolar Transistor, HBT) with bipolarity field-effect transistor (Bipolar FieldEffect Transistor, the transistor of wherein a kind of tool GaAs (GaAs), silicon (Si) or SiGe (SiGe) technique BiFET) forms, and is not limited with the present embodiment.
The base stage of the first transistor Q1 connects dynamic bias voltage controlling circuit 130 and receives bucking voltage VC, and the emitter-base bandgap grading of the first transistor Q1 connects earthed voltage GND.The base stage of transistor seconds Q2 connects the collector of the first transistor Q1, the collector connected system voltage VCC of transistor seconds Q2.One end of reference current source 112 connects the collector of the first transistor Q1, the other end connected system voltage VCC of reference current source 112, and described reference current source 112 provides reference current IREF.One end of the first resistance R 1 connects the emitter-base bandgap grading of transistor seconds Q2, and the other end of the first resistance R 1 connects dynamic bias voltage controlling circuit 130.One end of the second resistance R 2 connects the emitter-base bandgap grading of transistor seconds Q2, and the other end of the second resistance R 2 connects dynamic bias voltage controlling circuit 130 and output services voltage VB.The base stage of the 3rd transistor Q3 receives operating voltage VB, and the emitter-base bandgap grading of the 3rd transistor Q3 connects earthed voltage GND, and the collector connected system voltage VCC of the 3rd transistor Q3.One end of the first capacitor C 1 connects the other end of the 3rd resistance R 3, and the other end of the first capacitor C 1 connects earthed voltage GND.
Subsidiary one carry be, in the transistor circuit topology framework disclosing at Fig. 2, if the emitter-base bandgap grading area of the 3rd transistor Q3 is the lower time of situation of the emitter-base bandgap grading area of N times of the first transistor Q1, when the resistance value of the first resistance R 1 is the doubly resistance value of the second resistance R 2 of N, the output current IC of the 3rd transistor Q3 is N reference current IREF doubly, and wherein N is for being greater than 1.Designer can decide according to circuit design demand or practical application request the numerical value of N.Moreover, in the present embodiment, the input of output-stage circuit 120 and output have an input matching circuit 210 and output matching circuit 220, so that preferably power match usefulness to be provided, wherein input matching circuit 210 is electrically connected to the base terminal of the 3rd transistor Q3 and in order to received RF input signal RFIN, and output matching circuit 220 is electrically connected to the collector terminal of the 3rd transistor Q3 and in order to export radio frequency output signal RFOUT.
Next wanting teaching, is the operation principle that further illustrates radio-frequency power amplifier 200.
Continue referring to Fig. 2, in wireless communication system, radio-frequency power amplifier 200 is all one of core parts of most critical all the time, and its linearity and power efficiency have conclusive impact for usefulness and the efficiency of wireless communication system.The framework of radio-frequency power amplifier 200 is mainly to amplify taking active member as signal, the simple amplifier that the match circuit of collocation input again, output forms, mainly to be responsible for the modulating signal that will transmit to bring up to suitable high level, while making signal after sending out arrive receiving terminal via radio wave propagation medium, its signal strength signal intensity is enough to provide receiving terminal recovering signal.
In the present embodiment, under DC operation pattern, the bias circuit 110 being made up of the first transistor Q1, transistor seconds Q2, the first resistance R 1, the second resistance R 2 and reference current source 112 can produce the base stage of operating voltage VB to the three transistor Q3, it is noted that, now the DC voltage level of operating voltage VB equals the base emitter voltage VBE3 of the 3rd transistor Q3.Entering after alternate current operation pattern, the 3rd transistor Q3 can receive radio-frequency input signals RFIN and be amplified to export a radio frequency output signal RFOUT, in the time that the input power of radio-frequency input signals RFIN progressively increases, can make the base emitter voltage VBE3 of the 3rd transistor Q3 decline (base current IB3 also can decline) and operating voltage VB also can synchronously undergroundly fall thereupon, and then in a transient process, cause the operation bias point skew of the 3rd transistor Q3.And the present embodiment promotes operating voltage VB to reply the operation bias point of the 3rd transistor Q3 by dynamic bias voltage controlling circuit 130.Furthermore, the variation of the 3rd resistance R 3 meeting responsive operation voltage VB in dynamic bias voltage controlling circuit 130, and then produce a bucking voltage VC and be sent to the first transistor Q1 at the other end of the 3rd resistance R 3.It is noted that, the DC voltage level of bucking voltage VC equals the base emitter voltage VBE1 (base current IB1 also can decline) of the first transistor Q1.
Because collected current equals β base current doubly, so in the time that the base current IB1 of the first transistor Q1 declines, the collected current IC1 of the first transistor Q1 also can decline.The reference current IREF that provides definite value at reference current source 112, that is reference voltage IREF equals the summation of collected current IC1 and base current IB2, and wherein β is the current gain (current gain) of the first transistor Q1.In the time that the collected current IC1 of the first transistor Q1 declines, the base current IB2 of transistor seconds Q2 can rise.Then, because the base current IB2 of transistor seconds Q2 rises, so the emitter current IE2 of transistor seconds Q2 can rise.Then, the part electric current of emitter current IE2 second resistance R 2 of can flowing through, and then promote the operating voltage VB of bias circuit 110 the 3rd transistor Q3 that is sent to.Hold above-mentionedly, dynamically adjust operating voltage VB to maintain high linearity by the negative feedback mechanism of radio-frequency power amplifier 200 inside, that is radio-frequency power amplifier 200 still can be stablized the operation bias point of output-stage circuit 120 under the variation of input power.
Next to illustrate, be to provide at least one simulation curve figure about Fig. 2 embodiment.
Referring to Fig. 2 and Fig. 3, Fig. 3 is the simulation curve figure according to the input power of the embodiment of the present invention and operating voltage.In the curve chart of Fig. 3, trunnion axis is input power, and unit is dBm; Vertical axis is operating voltage, and unit is volt, and wherein curve C V1 is the simulation curve of Fig. 2 embodiment, and curve C V2 is the simulation curve that does not contain dynamic bias voltage controlling circuit 130 in Fig. 2.As shown in Figure 3, when in the time that the input power of radio-frequency input signals RFIN increases progressively, the amplitude that the Amplitude Ratio curve C V2 that curve C V1 declines declines is few, therefore radio-frequency power amplifier 200, in the situation that having dynamic bias voltage controlling circuit 130, can significantly reduce the possibility that operating voltage point enters cut-off region.Then, the present embodiment provides another simulation curve about input power and output current to further illustrate effect that this disclosure can reach again.Referring to Fig. 2 and Fig. 4, Fig. 4 is the simulation curve figure according to the input power of the embodiment of the present invention and output current.In the curve chart of Fig. 4, trunnion axis is input power, and unit is dBm; Vertical axis is output current, and unit is ampere, and wherein curve C V3 is the simulation curve of Fig. 2 embodiment, and curve C V4 is the simulation curve that does not contain dynamic bias voltage controlling circuit 130 in Fig. 2.As shown in Figure 4, when in the time that the input power of radio-frequency input signals RFIN increases progressively, the amplitude that the Amplitude Ratio curve C V4 that curve C V3 rises rises is many, therefore, can maintain its operating efficiency and high linearity at the radio-frequency power amplifier 200 with dynamic bias voltage controlling circuit.Finally, the present embodiment separately provides simulation curve figure about input power and power gain to illustrate further effect of this disclosure.Referring to Fig. 2 and Fig. 5, Fig. 5 is the simulation curve figure according to the input power of the embodiment of the present invention and power gain.In the curve chart of Fig. 5, trunnion axis is input power, and unit is dBm; Vertical axis is power gain (power gain), and unit is dB, and wherein curve C V5 is the simulation curve of Fig. 2 embodiment, and curve C V6 is the simulation curve that does not contain dynamic bias voltage controlling circuit 130 in Fig. 2.At this, must first illustrate, power gain is that the power output of the 3rd transistor Q3 is divided by the input power of the 3rd transistor Q3.As shown in Figure 5, when in the time that the input power of radio-frequency input signals RFIN increases progressively, curve C V5 can maintain better and stable power gain than curve C V6, therefore in the time that the input power of rf power signal RFIN increases progressively, the radio-frequency power amplifier 200 of the present embodiment still can maintain high linearity to meet the requirement of system.
Subsidiary one carries, and in one embodiment, output-stage circuit 120 has more inductance L, capacitor C 2 and C3.One end of capacitor C 2 couples the base stage of the 3rd transistor Q3, and the other end of capacitor C 2 couples radio-frequency input signals RFIN.Between inductance L coupling system voltage VCC and the collector of the 3rd transistor Q3.Capacitor C 3 one end be coupled to the collector of the 3rd transistor Q3, the other end output radio frequency output signal RFOUT of capacitor C 3.
In the time that radio-frequency power amplifier 200 not yet starts received RF input signal RFIN, inductance L can present low impedance state to direct current signal, for example short circuit, and capacitor C 2, C3 can present high impedance status to direct current signal, for example, open circuit.In the time that radio-frequency power amplifier 200 starts received RF input signal RFIN, inductance L can present high impedance status to high-frequency signal, for example, open circuit, and capacitor C 2, C3 can present low impedance state to high-frequency signal, for example short circuit.Accordingly, radio-frequency power amplifier 200 can operate smoothly in DC operation pattern and alternate current operation pattern.
(embodiment of electronic system)
Please refer to Fig. 6, Fig. 6 is the block schematic diagram according to the electronic system of the embodiment of the present invention.Electronic system 600 comprises radio-frequency power amplifier 610 and load 620.Radio-frequency power amplifier 610 received RF input signal RFIN and output radio frequency output signal RFOUT be to load 620, that is radio-frequency power amplifier 610 is after coupling system voltage, can provide a stable power output to load 620.Radio-frequency power amplifier 610 can be one of them of radio- frequency power amplifier 100 and 200 in above-mentioned Fig. 1 and Fig. 2 embodiment, and in order to provide stable power output to load.Electronic system 600 can be the system in various types of electronic installations, and electronic installation can be such as hand-held device or running gear etc.
(embodiment of bias point oneself method of adjustment)
Please refer to Fig. 7, Fig. 7 is according to the flow chart of the bias point oneself method of adjustment of the embodiment of the present invention.The described method of this example can be carried out at the radio-frequency power amplifier shown in Fig. 1 or Fig. 2, therefore please in the lump according to Fig. 1 or Fig. 2 in order to understanding.The bias point oneself method of adjustment of radio-frequency power amplifier comprises the following steps: by bias circuit receiving system voltage and operating voltage (step S710) is provided accordingly.Receive operating voltage and work in accordingly operation bias point (step S720) by output-stage circuit.Receive operating voltage and change output bucking voltage with stable operation bias point (step S730) according to it by dynamic bias voltage controlling circuit.While causing operating bias point skew when operating voltage decline, bias circuit increases operating voltage to reply operation bias point according to received bucking voltage.
Correlative detail about each step of the bias point oneself method of adjustment of radio-frequency power amplifier describes in detail at above-mentioned Fig. 1～Fig. 2 embodiment, does not repeat for this reason at this.Should be noted that at this, each step of Fig. 7 embodiment only for convenience of description need, the embodiment of the present invention is not using each step order to each other as the restrictive condition of implementing the present invention each embodiment.
(possible effect of embodiment)
In sum, electronic system, radio-frequency power amplifier and bias point oneself method of adjustment thereof that the embodiment of the present invention provides, in the time that the input power of radio-frequency input signals increases, the operation bias point that can take precautions against radio-frequency power amplifier enters cut-off region (cut-off region) caused gain compression (gaincompression) to avoid power output saturated, that is can dynamically control the operation bias point of radio-frequency power amplifier, so that operation bias point reduces the phenomenon being offset along with the change of input power.
At least one embodiment in the multiple embodiment of this disclosure, can improve the linearity of radio-frequency power amplifier transfer characteristic to reduce distorted signals, to high efficiency running and high linearity power output are provided, meets the requirement of system to the linearity.
The foregoing is only embodiments of the invention, it is not in order to limit to Patent right requirement scope of the present invention.
Claims (10)
1. a radio-frequency power amplifier, receives and amplifies radio-frequency input signals, it is characterized in that, this radio-frequency power amplifier comprises:
Bias circuit, receiving system voltage, and this bias circuit provides operating voltage according to this system voltage;
Output-stage circuit, is electrically connected this bias circuit, and this output-stage circuit receives this operating voltage to be operated in operation bias point; And
Dynamic bias voltage controlling circuit, receives this operating voltage and exports bucking voltage to this bias circuit according to the variation of this operating voltage,
Wherein, when the input power of this radio-frequency input signals increases, this operating voltage is declined and while causing this operation bias point skew, this bias circuit increases this operating voltage to reply this operation bias point according to this received bucking voltage.
2. radio-frequency power amplifier as claimed in claim 1, is characterized in that, this bias circuit comprises:
The first transistor, its base stage connects this dynamic bias voltage controlling circuit and receives this bucking voltage, and its emitter-base bandgap grading connects this earthed voltage;
Transistor seconds, its base stage connects the collector of this first transistor, and its collector connects this system voltage;
Reference current source, its one end connects the collector of this first transistor, and its other end connects this system voltage, and this reference current source provides reference current;
The first resistance, its one end connects the emitter-base bandgap grading of this transistor seconds, and its other end connects this dynamic bias voltage controlling circuit; And
The second resistance, its one end connects the emitter-base bandgap grading of this transistor seconds, and its other end connects this dynamic bias voltage controlling circuit and exports this operating voltage,
Wherein this reference current equals the summation of the collected current of this first transistor and the base current of this transistor seconds.
3. radio-frequency power amplifier as claimed in claim 2, it is characterized in that, while this operating voltage being declined when this input power increase, the base stage of this first transistor receives this bucking voltage and makes accordingly the base current of this first transistor and collected current decline, and then make the base current of this transistor seconds and emitter current increase, increase by this this operating voltage to reply this operation bias point.
4. radio-frequency power amplifier as claimed in claim 1, is characterized in that, this output-stage circuit comprises:
The 3rd transistor, its base stage receives this operating voltage, and its emitter-base bandgap grading connects this earthed voltage, and its collector connects this system voltage.
5. the radio-frequency power amplifier as described in claim 1, is characterized in that, this dynamic bias voltage controlling circuit comprises:
The 3rd resistance, its one end is connected between this bias circuit and this output-stage circuit, and receives this operating voltage; And
The first electric capacity, its one end connects the other end of the 3rd resistance, and its other end connects this earthed voltage.
6. an electronic system, is characterized in that, this electronic system comprises:
Radio-frequency power amplifier as claimed in claim 1, this radio-frequency power amplifier received RF input signal and output radio frequency output signal; And
Load, couples this radio-frequency power amplifier, and this load receives this radio frequency output signal,
Wherein in the time that this radio-frequency input signals increases, this radio-frequency power amplifier by this bucking voltage to stablize this operation bias point.
7. electronic system as claimed in claim 6, is characterized in that, this bias circuit comprises:
The first transistor, its base stage connects this dynamic bias voltage controlling circuit and receives this bucking voltage, and its emitter-base bandgap grading connects this earthed voltage;
Transistor seconds, its base stage connects the collector of this first transistor, and its collector connects this system voltage;
Reference current source, its one end connects the collector of this first transistor, and its other end connects this system voltage, and this reference current source provides reference current;
The first resistance, its one end connects the emitter-base bandgap grading of this transistor seconds, and its other end connects this dynamic bias voltage controlling circuit; And
The second resistance, its one end connects the emitter-base bandgap grading of this transistor seconds, and its other end connects this dynamic bias voltage controlling circuit and exports this operating voltage,
Wherein this reference current equals the summation of the collected current of this first transistor and the base current of this transistor seconds,
While wherein this operating voltage being declined when this input power increases, the base stage of this first transistor receives this bucking voltage and makes accordingly the base current of this first transistor and collected current decline, and then make the base current of this transistor seconds and emitter current increase, increase by this this operating voltage to reply this operation bias point.
8. electronic system as claimed in claim 6, is characterized in that, this dynamic bias voltage controlling circuit comprises:
The 3rd resistance, its one end is connected between this bias circuit and this output-stage circuit, and receives this operating voltage; And
The first electric capacity, its one end connects the other end of the 3rd resistance, and its other end connects this earthed voltage.
9. a bias point oneself method of adjustment, is characterized in that, this bias point oneself method of adjustment comprises:
By bias circuit receiving system voltage and operating voltage is provided accordingly;
Receive this operating voltage and work in accordingly operation bias point by output-stage circuit; And
Receive this operating voltage and change output bucking voltage to stablize this operation bias point according to it by dynamic bias voltage controlling circuit;
Wherein when this input power increases, this operating voltage is declined and while causing this operation bias point skew, this bias circuit increases this operating voltage to reply this operation bias point according to this received bucking voltage,
Wherein this bias point oneself method of adjustment is for radio-frequency power amplifier as claimed in claim 1.
10. bias point oneself method of adjustment as claimed in claim 9, it is characterized in that, when this input power increases and this operating voltage declined and while causing this operation bias point skew, this bias circuit increases this operating voltage to reply this operation bias point according to this received bucking voltage.
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| CN201210554761.2A CN103888086B (en) | 2012-12-19 | 2012-12-19 | Self method of adjustment of electronic system, radio-frequency power amplifier and its bias point |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111614327A (en) * | 2019-02-22 | 2020-09-01 | 瑞昱半导体股份有限公司 | Radio frequency amplifier with adaptive power supply |
| CN112803900A (en) * | 2021-03-30 | 2021-05-14 | 广州慧智微电子有限公司 | Bias circuit and radio frequency power amplifier |
| CN113534018A (en) * | 2020-04-14 | 2021-10-22 | 通用电气精准医疗有限责任公司 | Linear compensation method and device of radio frequency amplifier and magnetic resonance imaging system |
| CN113595515A (en) * | 2021-09-29 | 2021-11-02 | 杭州中科微电子有限公司 | High-linearity biasing circuit applied to radio frequency amplifier |
| CN113809991A (en) * | 2020-06-17 | 2021-12-17 | 立积电子股份有限公司 | Temperature compensation circuit for power amplifier |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1381091A (en) * | 2000-03-28 | 2002-11-20 | 皇家菲利浦电子有限公司 | Dynamic bias boosting circuit for power amplifier |
| US20040095193A1 (en) * | 2002-11-14 | 2004-05-20 | Enver Krvavac | Radio frequency power amplifier adaptive bias control circuit |
| CN1983802A (en) * | 2005-12-16 | 2007-06-20 | 联发科技股份有限公司 | RF amplifier circuit and operation method thereof |
| TW200726074A (en) * | 2005-12-16 | 2007-07-01 | Guang-Lie Wan | Voltage-controlled linearization circuit |
| TW200746621A (en) * | 2006-03-22 | 2007-12-16 | Qualcomm Inc | Dynamic bias control in power amplifier |
| CN101924522A (en) * | 2010-09-07 | 2010-12-22 | 沈阳中科微电子有限公司 | Radio-frequency power amplifier with adaptive linear biasing circuit |
-
2012
- 2012-12-19 CN CN201210554761.2A patent/CN103888086B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1381091A (en) * | 2000-03-28 | 2002-11-20 | 皇家菲利浦电子有限公司 | Dynamic bias boosting circuit for power amplifier |
| US20040095193A1 (en) * | 2002-11-14 | 2004-05-20 | Enver Krvavac | Radio frequency power amplifier adaptive bias control circuit |
| CN1983802A (en) * | 2005-12-16 | 2007-06-20 | 联发科技股份有限公司 | RF amplifier circuit and operation method thereof |
| TW200726074A (en) * | 2005-12-16 | 2007-07-01 | Guang-Lie Wan | Voltage-controlled linearization circuit |
| TW200746621A (en) * | 2006-03-22 | 2007-12-16 | Qualcomm Inc | Dynamic bias control in power amplifier |
| CN101924522A (en) * | 2010-09-07 | 2010-12-22 | 沈阳中科微电子有限公司 | Radio-frequency power amplifier with adaptive linear biasing circuit |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111614327A (en) * | 2019-02-22 | 2020-09-01 | 瑞昱半导体股份有限公司 | Radio frequency amplifier with adaptive power supply |
| CN111614327B (en) * | 2019-02-22 | 2023-03-24 | 瑞昱半导体股份有限公司 | Radio frequency amplifier with adaptive power supply |
| CN113534018A (en) * | 2020-04-14 | 2021-10-22 | 通用电气精准医疗有限责任公司 | Linear compensation method and device of radio frequency amplifier and magnetic resonance imaging system |
| CN113809991A (en) * | 2020-06-17 | 2021-12-17 | 立积电子股份有限公司 | Temperature compensation circuit for power amplifier |
| CN113809991B (en) * | 2020-06-17 | 2024-04-05 | 立积电子股份有限公司 | Temperature compensation circuit for power amplifier |
| CN112803900A (en) * | 2021-03-30 | 2021-05-14 | 广州慧智微电子有限公司 | Bias circuit and radio frequency power amplifier |
| CN112803900B (en) * | 2021-03-30 | 2021-07-16 | 广州慧智微电子有限公司 | Bias circuit and radio frequency power amplifier |
| CN113595515A (en) * | 2021-09-29 | 2021-11-02 | 杭州中科微电子有限公司 | High-linearity biasing circuit applied to radio frequency amplifier |
| CN113595515B (en) * | 2021-09-29 | 2022-01-04 | 杭州中科微电子有限公司 | High-linearity biasing circuit applied to radio frequency amplifier |
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|---|---|
| CN103888086B (en) | 2018-03-23 |
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