CN103887125A - 一种基于梯度掺杂纳米ZnO薄膜场助发射的透射式GaAs光电阴极 - Google Patents
一种基于梯度掺杂纳米ZnO薄膜场助发射的透射式GaAs光电阴极 Download PDFInfo
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- CN103887125A CN103887125A CN201410076312.0A CN201410076312A CN103887125A CN 103887125 A CN103887125 A CN 103887125A CN 201410076312 A CN201410076312 A CN 201410076312A CN 103887125 A CN103887125 A CN 103887125A
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410076312.0A CN103887125B (zh) | 2014-02-28 | 2014-02-28 | 一种基于梯度掺杂纳米ZnO薄膜场助发射的透射式GaAs光电阴极 |
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| CN201410076312.0A CN103887125B (zh) | 2014-02-28 | 2014-02-28 | 一种基于梯度掺杂纳米ZnO薄膜场助发射的透射式GaAs光电阴极 |
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| CN103887125A true CN103887125A (zh) | 2014-06-25 |
| CN103887125B CN103887125B (zh) | 2016-03-30 |
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| CN201410076312.0A Active CN103887125B (zh) | 2014-02-28 | 2014-02-28 | 一种基于梯度掺杂纳米ZnO薄膜场助发射的透射式GaAs光电阴极 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113994220A (zh) * | 2019-05-23 | 2022-01-28 | 法国甫托尼公司 | 提高量子产率的光电阴极 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3959037A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
| US4498225A (en) * | 1981-05-06 | 1985-02-12 | The United States Of America As Represented By The Secretary Of The Army | Method of forming variable sensitivity transmission mode negative electron affinity photocathode |
| US6069445A (en) * | 1997-01-30 | 2000-05-30 | Itt Industries, Inc. | Having an electrical contact on an emission surface thereof |
| CN102306600A (zh) * | 2011-07-19 | 2012-01-04 | 东华理工大学 | 一种蓝延伸变带隙AlGaAs/GaAs光电阴极及其制备方法 |
| CN102610472A (zh) * | 2012-04-01 | 2012-07-25 | 南京理工大学 | 峰值响应在532 nm敏感的反射式GaAlAs光电阴极及其制备方法 |
| CN103295855A (zh) * | 2013-05-29 | 2013-09-11 | 南京理工大学 | 一种指数掺杂反射式GaAs光电阴极及其制备方法 |
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2014
- 2014-02-28 CN CN201410076312.0A patent/CN103887125B/zh active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3959037A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
| US4498225A (en) * | 1981-05-06 | 1985-02-12 | The United States Of America As Represented By The Secretary Of The Army | Method of forming variable sensitivity transmission mode negative electron affinity photocathode |
| US6069445A (en) * | 1997-01-30 | 2000-05-30 | Itt Industries, Inc. | Having an electrical contact on an emission surface thereof |
| CN102306600A (zh) * | 2011-07-19 | 2012-01-04 | 东华理工大学 | 一种蓝延伸变带隙AlGaAs/GaAs光电阴极及其制备方法 |
| CN102610472A (zh) * | 2012-04-01 | 2012-07-25 | 南京理工大学 | 峰值响应在532 nm敏感的反射式GaAlAs光电阴极及其制备方法 |
| CN103295855A (zh) * | 2013-05-29 | 2013-09-11 | 南京理工大学 | 一种指数掺杂反射式GaAs光电阴极及其制备方法 |
Non-Patent Citations (1)
| Title |
|---|
| 陈亮等: "指数掺杂透射式GaAs光电阴极表面光电压谱研究", 《中国激光》, vol. 38, no. 9, 30 September 2011 (2011-09-30) * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113994220A (zh) * | 2019-05-23 | 2022-01-28 | 法国甫托尼公司 | 提高量子产率的光电阴极 |
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| CN103887125B (zh) | 2016-03-30 |
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Inventor after: Chen Liang Inventor after: Yang Kai Inventor after: Meng Yanlong Inventor after: Shen Yang Inventor after: Su Lingai Inventor after: Zhang Shuqin Inventor after: Dong Yanyan Inventor after: Xu Sunan Inventor after: Jin Shangzhong Inventor after: Shi Yan Inventor after: Zou Xiyong Inventor before: Chen Liang Inventor before: Chang Benkang Inventor before: Zhou Muchun Inventor before: Sun Caixia Inventor before: Shen Yang Inventor before: Zhou Zhanchun Inventor before: Jin Shangzhong Inventor before: Shen Weimin Inventor before: Xu Sunan Inventor before: Dong Yanyan Inventor before: Yang Kai Inventor before: Qian Yunsheng |
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Address after: 310000 No. 258, Yuen Xue street, Hangzhou, Zhejiang, Jianggan District Patentee after: China Jiliang University Address before: Hangzhou City, Zhejiang province 310018 Xiasha Higher Education Park source Street No. 258 Patentee before: China Jiliang University |
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Application publication date: 20140625 Assignee: ZHEJIANG TIAN HENG WU WEI ELECTRONICS TECHNOLOGY Co.,Ltd. Assignor: China Jiliang University Contract record no.: X2020980007824 Denomination of invention: A transparent GaAs photocathode based on field assisted emission from gradient doped nano ZnO Films Granted publication date: 20160330 License type: Common License Record date: 20201112 |
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Application publication date: 20140625 Assignee: North Night Vision Technology Co.,Ltd. Assignor: China Jiliang University Contract record no.: X2020980008115 Denomination of invention: A transparent GaAs photocathode based on field assisted emission from gradient doped nano ZnO Films Granted publication date: 20160330 License type: Common License Record date: 20201117 |