CN103878145A - Method for washing silicic acid gallium lanthanum wafer - Google Patents

Method for washing silicic acid gallium lanthanum wafer Download PDF

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Publication number
CN103878145A
CN103878145A CN201410155237.7A CN201410155237A CN103878145A CN 103878145 A CN103878145 A CN 103878145A CN 201410155237 A CN201410155237 A CN 201410155237A CN 103878145 A CN103878145 A CN 103878145A
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wafer
lgs
cleaning
silicic acid
cleaned
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CN103878145B (en
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李冬梅
周磊
梁圣法
李小静
张�浩
谢常青
刘明
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/34—Silicates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention discloses a method for washing a silicic acid gallium lanthanum wafer. The method includes the following steps that cleaning fluid composed of phosphoric acid, hydrogen peroxide and deionized water is used for carrying out mega sound washing on the silicic acid gallium lanthanum wafer; the washed silicic acid gallium lanthanum wafer is rinsed and spun to be dry; cleaning fluid composed of ammonium hydroxide, hydrogen peroxide and deionized water is used for carrying out mega sound washing on the silicic acid gallium lanthanum wafer; the washed silicic acid gallium lanthanum wafer is rinsed and spun to be dry; the wafer spun to be dry is placed into an oven to be dried. According to the method for washing the silicic acid gallium lanthanum wafer, time of an acid cleaning procedure is shortened and time of an alkaline washing procedure is prolonged; meanwhile, more effective mega sound cleaning is used for replacing traditional ultrasonic cleaning, the problem of washing the cut silicic acid gallium lanthanum wafer is solved, the cleanliness of the surface of the silicic acid gallium lanthanum wafer is improved and a good cleaning effect is obtained.

Description

A kind of method that LGS wafer is cleaned
Technical field
The present invention relates to a kind of method that LGS wafer is cleaned, to solve the cleaning problem of LGS wafer after cutting process, improve the cleannes of LGS wafer surface.
Background technology
Acoustic current surface wave device generally uses the piezoelectrics such as lithium niobate, lithium tantalate or quartz as substrate, but these materials also exist shortcoming separately: the heat endurance of lithium niobate and lithium tantalate is poor; The electromechanical coupling factor of quartz crystal is less, makes the SAW device based on quartz substrate have the shortcomings such as bandwidth is little, insertion loss is large, and quartz can α-βphasetransition occur near 573 ℃ time and lose piezoelectric property, thereby is not suitable for pyrostat.Find LGS (langasite, La from the mid-90 in 20th century 3ga 5siO 14, LGS) and crystal is since the potential application aspect surface acoustic wave and bulk wave, and this crystal becomes rapidly the research object of piezoelectricity field extensive concern.As a kind of New piezoelectric crystal, callium-lanthanum silicate crystal has moderate electromechanical coupling factor, good temperature stability, can meet the basic demand of SAW device to substrate material.
The device of making based on callium-lanthanum silicate crystal mainly used for reference the manufacture craft of silicon integrated circuit at present, but because the material behavior of callium-lanthanum silicate crystal is different from monocrystalline silicon, the method for simply applying mechanically the related process of silicon integrated circuit is impracticable.Therefore need on the basis of silicon integrated circuit manufacture craft, make the modification that meets LGS material behavior.For example, monocrystalline silicon is not soluble in various strong acid solutions, and in traditional silicon integrated circuit cleaning, the strongly acidic solutions that adopt clean as cleaning reagent more.
Fig. 1 is the schematic diagram of the different acid solution corrosion condition to LGS wafer, and as shown in Figure 1, various strong acid solutions all can cause corresponding corrosion to callium-lanthanum silicate crystal, and corrosion rate is all higher.Therefore, need to improve to be applicable to callium-lanthanum silicate crystal to traditional cleaning.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of method that LGS wafer is cleaned, and to solve the cleaning problem of LGS wafer after cutting process, improves the cleannes of LGS wafer surface.
(2) technical scheme
For achieving the above object, the invention provides a kind of method that LGS wafer is cleaned, comprise the steps:
Step 1: use the cleaning fluid being formed by phosphoric acid, hydrogen peroxide and deionized water to carry out million sound cleanings to LGS wafer;
Step 2: the LGS wafer after cleaning is rinsed and dried;
Step 3: use the cleaning fluid being formed by ammoniacal liquor, hydrogen peroxide and deionized water to carry out million sound cleanings to LGS wafer;
Step 4: the LGS wafer after cleaning is rinsed and dried;
Step 5: put into baking oven and dry rinsing wafer after drying.
In such scheme, H in the cleaning fluid of phosphoric acid described in step 1, hydrogen peroxide and deionized water composition 3pO 4: H 2o 2: H 2the mass ratio of O is 1: 1: 50～100.
In such scheme, described in step 1, million sound clean, and when cleaning, temperature is 50～60 ℃, and scavenging period is 10 minutes.
In such scheme, described in step 2, LGS wafer is rinsed, adopt the rinsing of deionized water normal temperature, rinsing time is 10 minutes.
In such scheme, NH in the cleaning fluid of ammoniacal liquor described in step 3, hydrogen peroxide and deionized water composition 3: H 2o 2: H 2the mass ratio of O is 1: 2: 50～100.
In such scheme, described in step 3, million sound clean, and when cleaning, temperature is 50～60 ℃, and scavenging period is 50 minutes.
In such scheme, described in step 4, LGS wafer is rinsed, adopt the rinsing of deionized water normal temperature, rinsing time is 10 minutes.
In such scheme, described in step 5, LGS wafer is dried, employing equipment is baking oven, and bake out temperature control is 40～90 ℃, and drying time is 20～30 minutes.
(3) beneficial effect
The method that LGS wafer is cleaned provided by the invention, it is the feature for callium-lanthanum silicate crystal, traditional cleaning is improved, on the basis of conventional semiconductors method for cleaning wafer, compress the time of acid cleaning process and extend time of alkaline cleaning process, utilize more efficiently million sound to clean simultaneously and substitute traditional ultrasonic cleaning, solve the cleaning problem of LGS wafer after cutting process, the cleannes that improved LGS wafer surface, have obtained good cleaning performance.
Accompanying drawing explanation
In order to illustrate further content of the present invention, below in conjunction with accompanying drawing, the present invention is described in detail, wherein:
Fig. 1 is the schematic diagram of the different acid solution corrosion condition to LGS wafer.
Fig. 2 is cleaning process flow figure conventional in typical traditional silicon integrated circuit industry.
Fig. 3 is the method flow diagram that LGS wafer is cleaned provided by the invention.
Fig. 4 adopts the present invention to clean the light microscope test picture of front and back LGS wafer surface.
Fig. 5 adopts the present invention to clean front and back LGS wafer is carried out to the picture that AFM (AFM) is tested.
The specific embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Fig. 1 is the schematic diagram of the different acid solution corrosion condition to LGS wafer, demonstrating various acid solutions all has certain corrosive effect to LGS wafer, but phosphoric acid to the corrosivity of callium-lanthanum silicate crystal far below hydrochloric acid conventional in conventional clean solution.
Fig. 2 is cleaning process flow figure conventional in typical traditional silicon integrated circuit industry, as seen from Figure 2, in traditional cleaning process flow, the normal main component of hydrochloric acid as acidic cleaning solution that adopt, and acidic cleaning solution scavenging period is longer than alkaline cleaning fluid scavenging period, as can be caused the corrosion of LGS wafer with this process cleaning, and adopt ultrasonic cleaning method in traditional cleaning process, the effect that the effect of ultrasonic cleaning is cleaned not as million sound.
Fig. 3 is the method flow diagram that LGS wafer is cleaned provided by the invention, the method is the feature for callium-lanthanum silicate crystal, traditional cleaning is improved, on the basis of the typical conventional semiconductors method for cleaning wafer of Fig. 2, adopt the less phosphoric acid of callium-lanthanum silicate crystal corrosivity is replaced to the stronger hydrochloric acid of corrosivity; Reduce the time of acid cleaning, and extended the time of alkaline cleaning; And utilize more efficiently million sound to clean alternative traditional ultrasonic cleaning, specifically comprise following step mule:
Step 1: use the cleaning fluid being formed by phosphoric acid, hydrogen peroxide and deionized water to carry out million sound cleanings to LGS wafer, wherein, H in cleaning fluid 3pO 4: H 2o 2: H 2the mass ratio of O is 1: 1: 50～100, and the cleaning method of employing is that million sound clean, and when cleaning, temperature is 50～60 ℃, and scavenging period is 10 minutes;
Step 2: the wafer after step 1 is cleaned adopts deionized water to rinse and dry, and wherein, rinsing time is 10 minutes;
Step 3: use the cleaning fluid being formed by ammoniacal liquor, hydrogen peroxide and deionized water to carry out million sound cleanings to LGS wafer, wherein, NH in cleaning fluid 3: H 2o 2: H 2the mass ratio of O is 1: 2: 50～100, and the cleaning method of employing is that million sound clean, and when cleaning, temperature is 50～60 ℃, and scavenging period is 50 minutes;
Step 4: the wafer after step 3 is cleaned adopts deionized water to rinse and dry, and wherein, rinsing time is 10 minutes;
Step 5: step 4 is rinsed to wafer after drying and put into baking oven and dry, wherein, bake out temperature control is 40～90 ℃, and drying time is 20～30 minutes, and whole cleaning process is complete.
The present invention adopts alkaline hydrogen peroxide cleaning fluid and million sound cleaning methods to clean LGS wafer, has fully utilized physics and chemistry method and has cleaned, and has effectively improved the cleannes of LGS wafer surface.
As shown in Figure 4, Fig. 4 adopts the present invention to clean the light microscope test picture of front and back LGS wafer surface.As can be seen from Figure 4, after adopting cleaning method provided by the invention to clean LGS wafer, amount of pollutants declines, and cleannes improve, therefore, the method that LGS wafer is cleaned provided by the invention has good cleaning performance and very high cleanliness factor.
Fig. 5 adopts the present invention to clean front and back LGS wafer is carried out to the picture that AFM (AFM) is tested, as can be seen from Figure 5, the method that LGS wafer is cleaned provided by the invention, LGS wafer is not caused to damage, obtained good cleaning performance.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (8)

1. a method of LGS wafer being cleaned, is characterized in that, comprises the steps:
Step 1: use the cleaning fluid being formed by phosphoric acid, hydrogen peroxide and deionized water to carry out million sound cleanings to LGS wafer;
Step 2: the LGS wafer after cleaning is rinsed and dried;
Step 3: use the cleaning fluid being formed by ammoniacal liquor, hydrogen peroxide and deionized water to carry out million sound cleanings to LGS wafer;
Step 4: the LGS wafer after cleaning is rinsed and dried;
Step 5: put into baking oven and dry rinsing wafer after drying.
2. the method that LGS wafer is cleaned as claimed in claim 1, is characterized in that, H in the cleaning fluid of phosphoric acid described in step 1, hydrogen peroxide and deionized water composition 3pO 4: H 2o 2: H 2the mass ratio of O is 1: 1: 50～100.
3. the method that LGS wafer is cleaned as claimed in claim 1, is characterized in that, described in step 1, million sound clean, and when cleaning, temperature is 50～60 ℃, and scavenging period is 10 minutes.
4. the method that LGS wafer is cleaned as claimed in claim 1, is characterized in that, described in step 2, LGS wafer is rinsed, and adopts the rinsing of deionized water normal temperature, and rinsing time is 10 minutes.
5. the method that LGS wafer is cleaned as claimed in claim 1, is characterized in that, NH in the cleaning fluid of ammoniacal liquor described in step 3, hydrogen peroxide and deionized water composition 3: H 2o 2: H 2the mass ratio of O is 1: 2: 50～100.
6. the method that LGS wafer is cleaned as claimed in claim 1, is characterized in that, described in step 3, million sound clean, and when cleaning, temperature is 50～60 ℃, and scavenging period is 50 minutes.
7. the method that LGS wafer is cleaned as claimed in claim 1, is characterized in that, described in step 4, LGS wafer is rinsed, and adopts the rinsing of deionized water normal temperature, and rinsing time is 10 minutes.
8. the method that LGS wafer is cleaned as claimed in claim 1, is characterized in that, described in step 5, LGS wafer is dried, and employing equipment is baking oven, and bake out temperature control is 40～90 ℃, and drying time is 20～30 minutes.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015157957A1 (en) * 2014-04-17 2015-10-22 中国科学院微电子研究所 Method for cleaning langasite wafer
CN106216276A (en) * 2016-08-24 2016-12-14 安徽正田能源科技有限公司 A kind of cleaning method of single gold silicon silicon body cutting microtome
CN112837995A (en) * 2020-12-28 2021-05-25 苏州恩腾半导体科技有限公司 Wafer surface pollution cleaning method
CN114101193A (en) * 2021-11-22 2022-03-01 锦州神工半导体股份有限公司 Silicon wafer surface cleaning method and cleaning solution
CN115213183A (en) * 2022-08-03 2022-10-21 东莞市凯迪微智能装备有限公司 Wafer box cleaning equipment and cleaning process thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070102023A1 (en) * 2005-11-10 2007-05-10 Yi Hun-Jung Apparatus for treating substrates with phosphoric acid solution and method for regenerating the phosphoric acid solution employed therein
CN101465273A (en) * 2007-12-18 2009-06-24 中芯国际集成电路制造(上海)有限公司 Wet-type etching method for reducing wafer surface blemish and device thereof
JP2014036155A (en) * 2012-08-09 2014-02-24 Shibaura Mechatronics Corp Cleaning solution generator, cleaning solution generating method, substrate cleaning device and substrate cleaning method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070102023A1 (en) * 2005-11-10 2007-05-10 Yi Hun-Jung Apparatus for treating substrates with phosphoric acid solution and method for regenerating the phosphoric acid solution employed therein
CN101465273A (en) * 2007-12-18 2009-06-24 中芯国际集成电路制造(上海)有限公司 Wet-type etching method for reducing wafer surface blemish and device thereof
JP2014036155A (en) * 2012-08-09 2014-02-24 Shibaura Mechatronics Corp Cleaning solution generator, cleaning solution generating method, substrate cleaning device and substrate cleaning method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
全国农业技术推广服务中心: "《土壤分析技术规范（第二版）》", 30 June 2006, article "《土壤分析技术规范第二版》" *
王继杨等: "硅酸镓镧晶体研究进展", 《功能材料》, no. 1, 25 February 2003 (2003-02-25) *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015157957A1 (en) * 2014-04-17 2015-10-22 中国科学院微电子研究所 Method for cleaning langasite wafer
US10964529B2 (en) 2014-04-17 2021-03-30 Institute of Microelectronics, Chinese Academy of Sciences Method for cleaning lanthanum gallium silicate wafer
CN106216276A (en) * 2016-08-24 2016-12-14 安徽正田能源科技有限公司 A kind of cleaning method of single gold silicon silicon body cutting microtome
CN106216276B (en) * 2016-08-24 2018-09-18 安徽正田能源科技有限公司 A kind of cleaning method of monocrystalline silicon silicon body cutting slicer
CN112837995A (en) * 2020-12-28 2021-05-25 苏州恩腾半导体科技有限公司 Wafer surface pollution cleaning method
CN114101193A (en) * 2021-11-22 2022-03-01 锦州神工半导体股份有限公司 Silicon wafer surface cleaning method and cleaning solution
CN115213183A (en) * 2022-08-03 2022-10-21 东莞市凯迪微智能装备有限公司 Wafer box cleaning equipment and cleaning process thereof

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