CN103871865B - A kind of method of cleaning plasma reaction chamber sidewall - Google Patents
A kind of method of cleaning plasma reaction chamber sidewall Download PDFInfo
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- CN103871865B CN103871865B CN201210553583.1A CN201210553583A CN103871865B CN 103871865 B CN103871865 B CN 103871865B CN 201210553583 A CN201210553583 A CN 201210553583A CN 103871865 B CN103871865 B CN 103871865B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
Abstract
A kind of method that the invention discloses cleaning plasma reaction chamber sidewall, the pulse adjusting radio frequency power source is output as the first radio-frequency power and the second radio-frequency power, it is positive oxygen ion and oxygen radical that first radio-frequency power can ionize oxygen containing cleaning gas, described positive oxygen ion and described oxygen radical react with the polymer of reaction chamber sidewall, are cleaned reaction chamber sidewall.Second radio-frequency power is less than the first radio-frequency power, ionization rate is relatively low or does not ionizes cleaning gas, therefore positive oxygen ion disappears or exists with less concentration, owing to the existence time of oxygen radical is longer, less than or equal to 10ms, therefore at once will not disappear along with the reduction of radio frequency power source, reaction chamber sidewall can be cleaned and electrostatic chuck will not be caused damage by oxygen radical；The present invention, while not affecting cleaning efficiency, decreases the time that electrostatic chuck is exposed to have under the positive oxygen ion of physical bombardment effect, extends the service life of electrostatic chuck.
Description
Technical field
The present invention relates to plasma etch apparatus reaction chamber cleaning technique field, particularly relate to a kind of utilize radio-frequency power to excite the technical field that plasma carrys out cleaning plasma reaction chamber sidewall.
Background technology
Plasma etch apparatus is during performing etching, plasma reacts with wafer, the polymer that etching reaction generates easily is deposited on plasma etch apparatus reaction chamber inwall, easily form sediment, pollute wafer, impact etching, it is therefore desirable to plasma etching apparatus reaction chamber is carried out.The reaction chamber cleaning method of prior art generally uses dry method to clean, after wafer removal reaction chamber, in reaction chamber, input has the gas of cleaning capacity, difference according to wafer material to be etched, cleaning gas is not quite similar, cleaning gas is in plasm reaction cavity, it is ionized as particles such as plasma (cation and anion) and free radicals under the effect of radio frequency power source, the plasma generated and free radical and the polymer generation chemical reaction being deposited on reaction chamber inwall, thus dispose the polymer of deposition and make product discharge reaction chamber with gas.
When wafer to be etched is dielectric material, the macromolecule polyalcohol formed on reaction chamber sidewall is usually fluorocarbon polymer, the cleaning gas now needed is usually oxygen containing oxidizing gas, it is oxonium ion and oxygen radical etc. that oxygen containing cleaning gas ionizes under the effect of radio frequency power source, and oxonium ion and oxygen radical all can react reaction of formation product with fluorocarbon polymer and discharge reaction chamber with gas.But, while cleaning gas cleaning, electrostatic chuck surface after removing wafer can be bombarded by positive oxygen ion, cause the physical injury of electrostatic chuck surface, meanwhile, positive oxygen ion accelerates have certain kinetic energy, when the positive ion bombardment cavity wall fluoropolymer of high-speed motion through plasma sheath, reactive ion etching, the corrosion of the ceramic layer of aggravation electrostatic chuck surface can occur., reduce the service life of parts.So needing existing technique is improved.
Summary of the invention
A kind of method that the invention provides cleaning plasma reaction chamber sidewall, it is possible to reduce the damage to electrostatic chuck on the premise of satisfied cleaning reaction chamber lateral wall polymer, extends the life-span of electrostatic chuck.
The present invention realizes by the following technical solutions:
A kind of method of cleaning plasma reaction chamber sidewall, described method includes:
First step: be passed through in reaction chamber and have oxygen containing cleaning gas, the radio-frequency power of regulation plasma-reaction-chamber is to the first radio-frequency power, and oxygen containing cleaning gas ionizes the formation particle such as positive oxygen ion and oxygen radical under the effect of the first radio-frequency power；Described positive oxygen ion and described oxygen radical react with the polymer of reaction chamber sidewall, are cleaned reaction chamber sidewall；
Second step: the radio-frequency power of regulation plasma-reaction-chamber is to the second radio-frequency power, described second radio-frequency power is less than described first radio-frequency power, under described second radio-frequency power, described oxygen containing cleaning gas no longer ionizes or ionizes less oxonium ion and oxygen radical, described oxonium ion disappears or exists with less concentration, in first step, the described oxygen radical of residual reacts with the polymer of reaction chamber sidewall, is cleaned reaction chamber sidewall.
Oxygen containing cleaning gas of the present invention includes O2、N2O、O3、CO2In one or more mixing.
During cleaning, the duration of described first step accounts for first step duration and the 10% ~ 90% of second step duration summation, the duration of described second step≤10ms.
Further, described first radio-frequency power is less than 1500w, described second radio-frequency power≤300w more than 300w.
Concrete, described first radio-frequency power is 500w, and described second radio-frequency power is 0w.
Further, before described first step starts, the substrate machined in removing described reaction chamber；Described reaction cavity pressure scope is 100 ~ 600Mt, and described gas flow rate range is 500sccm ~ 2000sccm.
Concrete, parameter in described reaction chamber is: the duration of described first step accounts for the first step duration and the 50% of second step duration summation, and the first radio-frequency power is 500w, and the second radio-frequency power is 0w, pressure is 500Mt, and gas flow rate is 2000sccm.
Concrete, parameter in described reaction chamber is: the duration of described first step accounts for the first step duration and the 10% of second step duration summation, and the first radio-frequency power is 1500w, and the second radio-frequency power is 300w, pressure 300Mt, clean gas flow rate 1000sccm.
Concrete, parameter in described reaction chamber is: the duration of described first step accounts for the first step duration and the 90% of second step duration summation, and the first radio-frequency power is 1000w, and the second radio-frequency power is 100w, pressure 500Mt, clean gas flow rate 2000sccm.
Concrete, the polymer of described plasm reaction cavity sidewall is mainly fluorocarbon polymer, described positive oxygen ion and described oxygen radical and generates carbon carrier of oxygen and little molecular carbon fluorine gas etc. with described fluorocarbon polymer generation chemical reaction, discharges in reaction chamber.
Technical scheme advantage disclosed by the invention is: adjusts radio frequency power source and is output as pulse output, it is oxonium ion and oxygen radical that first radio-frequency power can ionize oxygen containing cleaning gas, described positive oxygen ion and described oxygen radical react with the polymer of reaction chamber sidewall, are cleaned reaction chamber sidewall.Second radio-frequency power is less than the first radio-frequency power, does not ionize cleaning gas or ionization rate is relatively low, and under the second radio-frequency power, positive oxygen ion disappears or exists with low concentration；Owing to the existence time of oxygen radical is longer, less than or equal to 10ms, therefore at once will not disappear along with the reduction of radio frequency power source, reaction chamber sidewall can be cleaned and electrostatic chuck will not be caused damage by oxygen radical；By using technical solutions according to the invention, while not affecting cleaning efficiency, decrease the time that electrostatic chuck is exposed to have in the positive oxygen ion of physical bombardment effect, extend the service life of electrostatic chuck, improve productivity.
Accompanying drawing explanation
Fig. 1 is the reaction chamber structural representation of plasma etch apparatus of the present invention.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of protection of the invention.
Fig. 1 illustrates the structural representation of plasm reaction cavity of the present invention, described plasm reaction cavity 100 includes reaction chamber inwall 110, in etching process, the polymer that etching reaction generates easily is deposited on plasma etch apparatus reaction chamber inwall 110 surface, form sediment, cause the pollution of pending substrate.When the target etch layer of pending substrate is dielectric material, the polymer on reaction chamber inwall 110 surface is usually fluorocarbon polymer.In order to reduce the polymer impact on reaction procedure that reaction chamber inwall 110 is formed, generally between two panels Substrate treatment, reaction chamber inwall 110 is cleaned.Cleaning process is: be passed through cleaning gas in plasm reaction cavity 100, owing to target etch layer of the present invention is dielectric material, cleaning gas can use oxygen containing oxidizing gas, cleaning gas ionizes through the effect of radio frequency power source 150 in plasm reaction cavity and generates the particle such as positive oxygen ion 200 and oxygen radical 300, positive oxygen ion 200 and oxygen radical 300 react with the polymer of reaction chamber sidewall, reaction chamber sidewall 110 is cleaned, described radio frequency power source 150 acts on bottom electrode 120, described bottom electrode 120 is used for supporting electrostatic chuck 130.
Positive oxygen ion 200 is while reacting with fluorocarbon polymer, also under the effect of reaction chamber 100 internal electric field, electrostatic chuck 130 surface after removing wafer can be bombarded, cause the physical injury of electrostatic chuck surface, simultaneously, owing to positive oxygen ion 200 has extremely strong oxidisability, while bombardment electrostatic chuck 130 surface, the fluorocarbon polymer of electrostatic chuck surface can be aoxidized, in the process, under the kinetic energy and strong oxidizing property effect of positive oxygen ion, fluoropolymer can be with electrostatic chuck surface generation rie, exacerbate the damage of electrostatic chuck surface, reduce the service life of parts.
In order to improve cleaning procedure, improving the service life of electrostatic chuck, the present invention uses pulsed radio-frequency power to ionize cleaning gas.First it is passed through in reaction chamber 100 and there is oxygen containing cleaning gas, the radio-frequency power of regulation plasm reaction cavity 100 is to the first radio-frequency power simultaneously, now, oxygen containing cleaning gas ionizes the formation particle such as positive oxygen ion 200 and oxygen radical 300 under the effect of the first radio-frequency power；Positive oxygen ion and oxygen radical react with the polymer of reaction chamber sidewall, are cleaned reaction chamber sidewall；nullThen the radio-frequency power of plasma-reaction-chamber is regulated to the second radio-frequency power，Described second radio-frequency power is less than described first radio-frequency power，Under described second radio-frequency power，The speed that described oxygen containing cleaning gas no longer ionizes generation positive oxygen ion and oxygen radical or ionization is relatively low，Described positive oxygen ion disappears or exists with relatively low concentration，Owing to the existence time of oxygen radical is longer，Less than or equal to 10ms，Will not the reduction of radio frequency power and disappear immediately，Therefore in the second step，The polymer that in first step, the oxygen radical 300 of residual continues with reaction chamber sidewall reacts，Reaction chamber sidewall is cleaned，Simultaneously，Owing to the concentration of the oxygen radical 300 of cleaning gas ionization generation is much larger than the concentration of positive oxygen ion 200，Therefore reduction radio-frequency power，Only maintain oxygen radical that to clean rate, the cleaning of reaction chamber sidewall will not be produced too much influence.First radio-frequency power and the second radio-frequency power alternate turns, complete the cleaning to reaction chamber sidewall, use technical solutions according to the invention, can be while keeping clean rate, reduce the damage that electrostatic chuck is caused by positive oxygen ion as far as possible, extend the life-span of electrostatic chuck.
In a typical embodiment, pressure in plasm reaction cavity 100 is 500Mt, clean gas flow rate in reaction chamber is 2000sccm, in real work, the pressure in reaction chamber 100 is between 100Mt ~ 600Mt, and clean gas flow rate can realize the object of the invention between 500sccm ~ 2000sccm.Physical bombardment can be reduced owing to higher air pressure is conducive to improving cleaning efficiency simultaneously, improve clean gas flow rate and can dilute the fluoro free radical (producing during cleaning fluorocarbon polymer) that electrostatic chuck surface can be caused damage, reduce the damage of electrostatic chuck surface, therefore the parameter that the present embodiment uses is: pressure 500Mt, clean gas flow rate 2000sccm.Oxygen containing cleaning gas of the present invention can be O2、N2O、O3、CO2In one or more mixing, it is also possible to include diluent gas, such as Ar, N2Deng.The present embodiment uses O2And N2.Owing under the second radio-frequency power, the existence time of oxygen radical 300 is less than or equal to 10ms, in order to not affect clean rate, the duration of the second radio-frequency power need to be less than or equal to 10ms.Owing under the first radio-frequency power, electrostatic chuck 130 can be caused damage by positive oxygen ion 200, in order to ensure the cleaning efficiency in reaction chamber sidewall, improving the service life of electrostatic chuck 130 the most as far as possible, the scope of the first radio-frequency power duration/(first the+the second radio-frequency power duration radio-frequency power duration) (can be referred to as dutycycle) can be in 10% ~ 90%.Dutycycle is the biggest, and cleaning efficiency is the highest, and the damage of electrostatic chuck is the biggest simultaneously.In one embodiment of the invention, can set dutycycle as 50%, i.e. the duration of first frequency and the duration of second frequency is identical, and the present embodiment is set as 0.5ms.Duration 0.5ms due to second frequency is much smaller than the existence time 10ms of oxygen radical 300, so when radio frequency power source power output is adjusted to the second radio-frequency power, although no longer cleaning gas being ionized in reaction chamber 100, but the concentration of the oxygen radical generated under the first radio-frequency power condition of work still maintains higher level, therefore cleaning efficiency will not be produced considerable influence.In the present embodiment, owing to dutycycle is 50%, the duration of the first radio-frequency power only has half, is equivalent to the time minimizing half that electrostatic chuck 130 is damaged, thus well protects electrostatic chuck.
Cleaning gas can be ionized between 300w to 1500w by known radio-frequency power, less less than or equal to the speed that can not realize during 300w cleaning gas is ionized or ionized, therefore the present invention the first radio-frequency power is in the range of 300w ~ 1500w, the scope≤300w of the second radio-frequency power.In order to simplify operation, simultaneously, in order to realize more preferable effect, the preferred technical scheme of the present embodiment be the first radio-frequency power be the size of normal ionization cleaning gas, such as 500w, the second radio-frequency power is 0, during i.e. radio frequency power source is in the cyclic process of On-Off-On-pass, and its be in out state time, power output is 500w.When the dutycycle of radio frequency power source is 50%, it constantly carries out the operation of On-Off-On-pass with the frequency of 1000hz.
In a further embodiment, the dutycycle of radio frequency power source can also be 10%, the duration of the i.e. first radio-frequency power/(first the+the second radio-frequency power duration radio-frequency power duration)=0.1, when the cycle of an on-off is 10ms, the time that cleaning gas ionization occurs only has 1ms, the duration of the second radio-frequency power is 9ms, existence time 10ms still less than oxygen radical, therefore cleaning efficiency will not be impacted, simultaneously, owing to the first radio-frequency power duration is the shortest, ensure that the damage that electrostatic chuck 130 is caused by positive oxygen ion 200 is sufficiently small, thus extend the working life of electrostatic chuck as far as possible.In the present embodiment, the first radio-frequency power is 1500w, and the second radio-frequency power is 300w, pressure 300Mt, clean gas flow rate 1000sccm.
In a further embodiment, the dutycycle of radio frequency power source can also be 90%, the duration of the i.e. first radio-frequency power/(first the+the second radio-frequency power duration radio-frequency power duration)=0.9, in the present embodiment, owing to the cleaning gas most of the time all can ionize generation positive oxygen ion and oxygen radical, so cleaning efficiency is higher, but it is in for a long time due to electrostatic chuck in the bombardment of positive oxygen ion and the corrosion of fluoro free radical, it is lost more serious, but relative to prior art, make moderate progress.In the present embodiment, the first radio-frequency power is 1000w, and the second radio-frequency power is 100w, pressure 500Mt, clean gas flow rate 2000sccm.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that the description above is not considered as limitation of the present invention.After those skilled in the art have read foregoing, multiple amendment and replacement for the present invention all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. the method for a cleaning plasma reaction chamber sidewall, it is characterised in that: described method includes:
First step: be passed through oxygen containing cleaning gas, the radio frequency of regulation plasma-reaction-chamber in reaction chamber
Power is to the first radio-frequency power, and oxygen containing cleaning gas ionizes formation under the effect of the first radio-frequency power
Positive oxygen ion and oxygen radical；
Second step: the radio-frequency power of regulation plasma-reaction-chamber is to the second radio-frequency power, and described second penetrates
Frequently power is less than described first radio-frequency power, and described oxygen containing cleaning gas no longer ionizes or ionizes relatively
Few oxonium ion and oxygen radical, described oxonium ion disappears or exists with less concentration, the described first step
Rapid and described second step is alternately.
Method the most according to claim 1, it is characterised in that: described oxygen containing cleaning gas includes
O2、N2O、O3、CO2In one or more mixing.
Method the most according to claim 1, it is characterised in that: the duration of described first step accounts for
The one step duration and the 10% of second step duration summation～90%, described second step
Duration≤10ms.
Method the most according to claim 1, it is characterised in that: described first radio-frequency power is more than 300w
Less than 1500w, described second radio-frequency power≤300w.
Method the most according to claim 4, it is characterised in that: described first radio-frequency power is 500w,
Described second radio-frequency power is 0w.
Method the most according to claim 1, it is characterised in that: before described first step starts, remove institute
The substrate machined in stating reaction chamber；Regulating described reaction cavity pressure scope is 100Mt
～600Mt, described gas flow rate range is 500sccm～2000sccm.
Method the most according to claim 1, it is characterised in that: the parameter in described reaction chamber is: described
The duration of first step accounts for first step duration and second step duration summation
50%, the first radio-frequency power is 500w, and the second radio-frequency power is 0w, and pressure is 500Mt, gas
Flow velocity is 2000sccm.
Method the most according to claim 1, it is characterised in that: the parameter in described reaction chamber is: described
The duration of first step accounts for first step duration and second step duration summation
10%, the first radio-frequency power is 1500w, and the second radio-frequency power is 300w, pressure 300Mt, clearly
Clean gas flow rate 1000sccm.
Method the most according to claim 1, it is characterised in that: the parameter in described reaction chamber is: described
The duration of first step accounts for first step duration and second step duration summation
90%, the first radio-frequency power is 1000w, and the second radio-frequency power is 100w, pressure 500Mt, clearly
Clean gas flow rate 2000sccm.
Method the most according to claim 1, it is characterised in that: gathering of described plasm reaction cavity sidewall
Compound includes that fluorocarbon polymer, described positive oxygen ion and described oxygen radical are sent out with described fluorocarbon polymer
Biochemical reaction generates carbon carrier of oxygen and little molecular carbon fluorine gas, discharges in reaction chamber.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210553583.1A CN103871865B (en) | 2012-12-18 | 2012-12-18 | A kind of method of cleaning plasma reaction chamber sidewall |
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| CN201210553583.1A CN103871865B (en) | 2012-12-18 | 2012-12-18 | A kind of method of cleaning plasma reaction chamber sidewall |
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| CN103871865A CN103871865A (en) | 2014-06-18 |
| CN103871865B true CN103871865B (en) | 2016-08-17 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7158308B2 (en) * | 2019-02-14 | 2022-10-21 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| CN111584356A (en) * | 2020-06-01 | 2020-08-25 | 长江存储科技有限责任公司 | Control method and control device for etching process, storage medium and etching equipment |
| CN115491657B (en) * | 2022-09-21 | 2023-09-19 | 拓荆科技股份有限公司 | Cleaning method, storage medium, driving circuit, and semiconductor processing apparatus |
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| US20070248767A1 (en) * | 2006-04-19 | 2007-10-25 | Asm Japan K.K. | Method of self-cleaning of carbon-based film |
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| US6489245B1 (en) * | 1998-02-04 | 2002-12-03 | Lam Research Corporation | Methods for reducing mask erosion during plasma etching |
| CN1607651A (en) * | 2003-09-30 | 2005-04-20 | 艾格瑞系统有限公司 | Methods for cleaning processing chambers |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |