CN115491657B - Cleaning method, storage medium, driving circuit, and semiconductor processing apparatus - Google Patents
Cleaning method, storage medium, driving circuit, and semiconductor processing apparatus Download PDFInfo
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- CN115491657B CN115491657B CN202211149178.3A CN202211149178A CN115491657B CN 115491657 B CN115491657 B CN 115491657B CN 202211149178 A CN202211149178 A CN 202211149178A CN 115491657 B CN115491657 B CN 115491657B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Abstract
The invention provides a cleaning method of a reaction cavity, a computer readable storage medium, a driving circuit of the reaction cavity and processing equipment of a semiconductor. The cleaning method of the reaction cavity comprises the following steps: performing primary cleaning treatment on the reaction cavity through a remote plasma system; the reaction chamber is subjected to superposition of the preliminary cleaning treatment and the stirring cleaning treatment, wherein the stirring cleaning treatment consists of top radio frequency cleaning treatment and side radio frequency cleaning treatment which are alternately performed; and terminating the preliminary cleaning process and the top RF cleaning process to perform the lateral RF cleaning process on the reaction chamber.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a cleaning method for a reaction chamber, a computer readable storage medium, a driving circuit for a reaction chamber, and a processing apparatus for a semiconductor.
Background
In the semiconductor field, the cleaning effect of high density plasma chemical vapor deposition chambers is important for semiconductor fabrication, and it is currently practice in the art to use a remote plasma system (Remote Plasma System, RPS) to remotely dissociate nitrogen fluoride (NF 3) and then transfer it to the process chamber for cleaning. However, in practical use, the cleaning effect of the lower part of the cavity is poor, and the cleaning effect is difficult to improve by means of hardware equipment. To improve the cleaning effect, it is another practice in the art to increase the cleaning time. However, these practices result in Arcing (Arcing) inside the remote plasma system and Feed Through (Feed Through), which is prone to particle contamination problems.
In order to overcome the above-mentioned drawbacks of the prior art, there is a need in the art for a cleaning technology of a reaction chamber, which is used for improving the cleaning effect of the reaction chamber without increasing the cleaning time, and increasing the dissociation degree of nitrogen fluoride (NF 3) to reduce the usage amount of nitrogen fluoride (NF 3), so as to improve the economical efficiency and the high efficiency of cleaning the reaction chamber.
Disclosure of Invention
The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
In order to overcome the above-mentioned drawbacks of the prior art, the present invention provides a cleaning method for a reaction chamber, a computer readable storage medium, a driving circuit for a reaction chamber, and a processing apparatus for a semiconductor, which can improve the cleaning effect of the reaction chamber without increasing the cleaning time, and increase the dissociation degree of nitrogen fluoride (NF 3) to reduce the usage amount of nitrogen fluoride (NF 3), thereby improving the economical efficiency and the high efficiency of cleaning the reaction chamber.
Specifically, the cleaning method of the reaction chamber provided in the first aspect of the present invention includes the following steps: performing primary cleaning treatment on the reaction cavity through a remote plasma system; the reaction chamber is subjected to superposition of the preliminary cleaning treatment and the stirring cleaning treatment, wherein the stirring cleaning treatment consists of top radio frequency cleaning treatment and side radio frequency cleaning treatment which are alternately performed; and terminating the preliminary cleaning process and the top RF cleaning process to perform the lateral RF cleaning process on the reaction chamber.
Further, in some embodiments of the invention, a pretreatment chamber is included in the remote plasma system. The pretreatment cavity is arranged at the front end of the reaction cavity. The step of performing a preliminary cleaning process on the reaction chamber via a remote plasma system includes: inputting a first gas containing fluorine into the pretreatment chamber; ionizing the fluorine-containing gas via the pretreatment chamber to obtain a precursor containing F + Is a second gas of (a); and will beThe second gas is input into the reaction chamber to perform the preliminary cleaning process on the reaction chamber via the remote plasma system.
Further, in some embodiments of the present invention, the step of performing the superposition of the preliminary cleaning treatment and the agitation cleaning treatment on the reaction chamber includes: monitoring SiF in the reaction chamber 4 Concentration; and in response to the SiF 4 And when the concentration reaches a peak value or is higher than a preset first concentration threshold value, alternately providing a top radio frequency and a side radio frequency for the reaction cavity so as to perform the primary cleaning treatment and the superposition treatment of the stirring cleaning treatment on the reaction cavity.
Further, in some embodiments of the present invention, the terminating the preliminary cleaning process and the top rf cleaning process to perform the lateral rf cleaning process on the reaction chamber comprises: counting the processing time of the superposition processing; and stopping the preliminary cleaning process and the top radio frequency cleaning process in response to the processing time of the superposition process reaching a preset first time threshold, so as to perform the side radio frequency cleaning process on the reaction chamber.
Further, in some embodiments of the present invention, the cleaning method further comprises the steps of, prior to performing the superimposing process: performing a superposition processing experiment of a plurality of different processing times on one or more reaction cavity samples; detecting the cleaning effect and the damage effect of each reaction cavity sample after corresponding superposition treatment experiments; and determining the first time threshold according to the cleaning effect and the damage effect.
Further, in some embodiments of the present invention, the step of performing the lateral rf cleaning process on the reaction chamber further includes: monitoring SiF in the reaction chamber 4 Concentration; and in response to the SiF 4 And stopping the side radio frequency cleaning treatment when the concentration reaches a valley value or is lower than a preset second concentration threshold value.
Further, in some embodiments of the invention, the responding to the SiF 4 The concentration reaching a valley or lowThe step of terminating the lateral rf cleaning process at a predetermined second concentration threshold comprises: responsive to the SiF 4 And when the concentration reaches a valley value or is lower than a preset second concentration threshold value, providing side radio frequency cleaning treatment for the reaction cavity for a second time threshold value, and then terminating the side radio frequency cleaning treatment.
Further, the above-described computer-readable storage medium according to the second aspect of the present invention has stored thereon computer instructions. The computer instructions, when executed by a processor, implement the method for cleaning a reaction chamber provided in the first aspect of the present invention.
In addition, the driving circuit of the reflecting cavity provided by the third aspect of the invention comprises a radio frequency power supply, a circuit-changing switch and at least two branches. The first branch is connected with a first coil at the top of the reaction cavity. The second branch is connected with a second coil at the side of the reaction cavity. The driving circuit is configured to: on the basis of performing the preliminary cleaning treatment, the first branch and the second branch are alternately connected to the radio frequency power supply so as to perform superposition treatment of the preliminary cleaning treatment and stirring cleaning treatment on the reaction chamber, wherein the stirring cleaning treatment consists of top radio frequency cleaning treatment and side radio frequency cleaning treatment which are alternately performed; and responsive to terminating the preliminary cleaning process, disconnecting the first branch and connecting the second branch to the radio frequency power source to perform the lateral radio frequency cleaning process on the reaction chamber.
Further, in some embodiments of the present invention, the driving circuit further includes a third branch, a fourth branch, and a power divider. The third branch is connected with the first coil at the top of the reaction cavity. And the fourth branch is connected with the second coil at the side of the reaction cavity. The power divider is arranged on the third branch circuit and the fourth branch circuit. The drive circuit is further configured to: the third branch and the fourth branch are connected to the radio frequency power supply, and power provided to the first coil and the second coil is distributed through the power distributor so as to generate plasma in the reaction cavity through the first coil and the second coil.
Further, a semiconductor processing apparatus provided according to a fourth aspect of the present invention includes: the reaction cavity is connected with the remote plasma system; the first coil is arranged at the top of the reaction cavity; the second coil is arranged at the side of the reaction cavity; and a driving circuit of the reaction chamber provided in the third aspect of the invention.
Drawings
The above features and advantages of the present invention will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.
Fig. 1 illustrates a schematic diagram of a semiconductor processing apparatus provided in accordance with some embodiments of the present invention.
Fig. 2 illustrates a schematic diagram of a reaction chamber provided in accordance with some embodiments of the present invention.
Fig. 3 is a flow chart of a method for cleaning a reaction chamber according to some embodiments of the invention.
Fig. 4 illustrates a timing diagram of a method for cleaning a reaction chamber according to some embodiments of the invention.
Reference numerals:
11. a remote plasma system;
12. a reaction chamber;
13. a top coil;
14. a side coil;
311. a first branch;
312. a second branch;
313. a third branch;
314. a fourth branch;
315. a power divider;
316. a change-over switch;
317. a first contact;
318. a second contact;
319. a third contact;
320. a matcher;
321. a radio frequency power supply.
Detailed Description
Further advantages and effects of the present invention will become apparent to those skilled in the art from the disclosure of the present specification, by describing the embodiments of the present invention with specific examples. While the description of the invention will be presented in connection with a preferred embodiment, it is not intended to limit the inventive features to that embodiment. Rather, the purpose of the invention described in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the invention. The following description contains many specific details for the purpose of providing a thorough understanding of the present invention. The invention may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" as used in the following description should be understood as referring to the orientation depicted in this paragraph and the associated drawings. This relative terminology is for convenience only and is not intended to be limiting of the invention as it is described in terms of the apparatus being manufactured or operated in a particular orientation.
It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms and these terms are merely used to distinguish between different elements, regions, layers and/or sections. Accordingly, a first component, region, layer, and/or section discussed below could be termed a second component, region, layer, and/or section without departing from some embodiments of the present invention.
As described above, in the semiconductor field, the cleaning effect of high density plasma chemical vapor deposition chambers is important for semiconductor fabrication, and it is currently practiced in the art to use a Remote Plasma System (RPS) to remotely dissociate nitrogen fluoride (NF 3) and then transfer it to a process chamber for cleaning. However, in practical use, the cleaning effect of the lower part of the cavity is poor, and the cleaning effect is difficult to improve by means of hardware equipment. Other practices in the art have increased cleaning times in order to improve cleaning. However, these practices can lead to problems with Arcing (Arcing) inside the remote plasma system Feed Through (RPS Feed Through) and thus susceptibility to particle contamination.
In order to overcome the above-mentioned drawbacks of the prior art, the present invention provides a cleaning method for a reaction chamber, a computer readable storage medium, a driving circuit for a reaction chamber, and a semiconductor processing apparatus, which are used for improving the cleaning effect of the reaction chamber without increasing the cleaning time, and increasing the dissociation degree of nitrogen fluoride (NF 3) to reduce the usage amount of nitrogen fluoride (NF 3), thereby improving the economical efficiency and the high efficiency of cleaning the reaction chamber.
In some non-limiting embodiments, the method for cleaning a reaction chamber according to the first aspect of the present invention may be implemented via the driving circuit of the reaction chamber according to the second aspect of the present invention. The driving circuit may be configured in the above-described semiconductor processing apparatus provided in the fourth aspect of the present invention, wherein the memory and the processor are configured. The memory includes, but is not limited to, the above-described computer-readable storage medium provided by the second aspect of the present invention, having stored thereon computer instructions. The processor is coupled to the memory and configured to execute computer instructions stored on the memory to implement the method for cleaning a reaction chamber as described above provided in the first aspect of the present invention.
Please refer to fig. 1 and fig. 2 first. Fig. 1 illustrates a schematic diagram of a semiconductor processing apparatus provided in some embodiments of the invention. Fig. 2 illustrates a schematic diagram of a reaction chamber provided in accordance with some embodiments of the present invention.
As shown in fig. 1 and 2, in some embodiments of the present invention, the semiconductor processing apparatus provided in the fourth aspect of the present invention includes a reaction chamber, a first coil 312, a second coil 311, and the reaction chamber driving circuit provided in the third aspect of the present invention. Here, one side (e.g., upper side) of the reaction chamber 12 may be connected to a Remote Plasma System (RPS) 11 for acquiring F from the RPS 11 + And the like to perform cleaning of the reaction chamber 12. The first coil 13 may be provided on the top of the reaction chamber 12 as a top coil. The second coil 14 may be provided on a side of the reaction chamber 12 as a side coil. The driving circuit may include a radio frequency power source 321, a matcher 320, a switch 316, and at least two branches 311, 312.
In some embodiments, the first branch 311 may be connected to the first coil 13 at the top of the reaction chamber 12. The second leg 312 may connect to the second coil 14 laterally of the reaction chamber 12. The matcher 320 may transform the cavity impedance of the reaction chamber 12 to a value (e.g., 50 ohms) that matches the internal resistance of the power supply 321 to reduce reflected power so that the power of the power supply 321 is output to both coil loads 13, 14. The switch 316 can be connected to the processor (not shown) to execute the computer instructions stored in the memory (not shown) to implement the cleaning method for the reaction chamber according to the first aspect of the present invention.
The operation of the drive circuit for the reaction chamber described above will be described below in connection with some embodiments of the method for cleaning the reaction chamber. It will be appreciated by those skilled in the art that these examples of cleaning methods are merely some non-limiting embodiments provided by the present invention, and are intended to clearly illustrate the general concepts of the present invention and to provide some embodiments that are convenient for public implementation, and are not intended to limit the overall functionality or overall operation of the drive circuit. Similarly, the driving circuit is only a non-limiting embodiment provided by the invention, and does not limit the execution main body of each step in the cleaning method of the reaction chambers.
Please refer to fig. 3 and fig. 4 in combination. Fig. 3 is a flow chart of a method for cleaning a reaction chamber according to some embodiments of the invention. Fig. 4 illustrates a timing diagram of a method for cleaning a reaction chamber according to some embodiments of the invention.
As shown in step S1 of fig. 3, in the process of cleaning the reaction chamber, the driving circuit may first control the bypass switch 316 to disconnect the first branch 311 and the second branch 312, so as to perform a preliminary cleaning process on the reaction chamber 12 via the remote plasma system 11.
Specifically, as shown in FIG. 1, in some embodiments of the present invention, a pretreatment chamber is included in the Remote Plasma System (RPS) 11 described above. The pretreatment chamber is provided at the front end of the reaction chamber 12. During the initial cleaning of the reaction chamber 12 via the remote plasma system 11, a technician may first introduce a first fluorine-containing gas (including but not limited to nitrogen fluoride NF 3) into the pretreatment chamber and then ionize the fluorine-containing gas via the pretreatment chamber to obtain a plasma containing F + Is a second gas of (a). The second gas may contain F obtained by ionization + Unreacted NF3 may also be included. The pretreatment chamber may then contain F + The second gas of ions is introduced into the reaction chamber 12 and is mixed with silicon dioxide (SiO 2 ) A reaction occurs such that a preliminary cleaning process is performed on the reaction chamber 12 via the remote plasma system 11.
With continued reference to fig. 3, after the preliminary cleaning process is performed on the reaction chamber 12, the driving circuit may control the switch 316 to alternately connect the first branch 311 and the second branch 312 to the rf power source 321 to perform the superposition process of the preliminary cleaning process and the stirring cleaning process on the reaction chamber 12 based on the preliminary cleaning process as shown in step S2. Here, the agitation cleaning treatment is composed of a top rf cleaning treatment and a side rf cleaning treatment which are alternately performed.
Specifically, as shown in FIGS. 1 and 4, the driving circuit can monitor SiF in the reaction chamber 12 in real time during the preliminary cleaning process by the remote plasma system 11 4 Concentration. Responsive to the SiF 4 The driving circuit may determine that the damage condition of the reaction chamber 12 has reached a critical state when the concentration reaches a peak value or is higher than a preset first concentration threshold value, so as to control the change-over switch 316 to alternately contact the first contact 317 and the second contact 318. In this way, the driving circuit can alternately supply the electric energy to the top coil 13 and the side coil 14 via the first branch 311 and the second branch 312 to alternately supply the top rf and the side rf to the reaction chamber 12, so as to form a stirring effect, so as to perform the superposition of the preliminary cleaning treatment and the stirring cleaning treatment on the reaction chamber 12. Here, the response is SiF 4 The description of the concentration reaching the peak or above the preset first concentration threshold is only a non-limiting manner of description, including but not limited to SiF 4 The moment the concentration reaches the peak or is above the preset first concentration threshold, and its time range of + -10 seconds. The first concentration threshold may be calibrated comprehensively according to the related index of the particle pollution and/or Feed Through damage condition, and its principle and calibration mode do not relate to the technical improvement of the present invention, and will not be described herein.
By introducing the top RF and the side RF to form the stirring effect of the electric field based on the RPS cleaning process, the invention can perform the reaction on NF entering the reaction chamber 12 3 Further dissociation is carried out and fluorine ion F is prevented + Is compounded with silicon element in the reaction chamber 12 to promote F + Density, thereby reducing Nitrogen Fluoride (NF) 3 ) The amount of the reaction chamber 12 to be used, the cleaning efficiency of the reaction chamber 12 is improved, and the cleaning effect of the reaction chamber 12 is improved without increasing the cleaning time.
With continued reference to fig. 3, after the superposition of the preliminary cleaning and the stirring cleaning of the reaction chamber 12, the driving circuit controls the switch 316 to disconnect the first branch 311 and connect the second branch 312 to the rf power source 321 along with terminating the preliminary cleaning, so as to perform the lateral rf supplementary cleaning of the reaction chamber 12.
Specifically, as shown in fig. 1 and 4, the driving circuit may count the processing time of the superposition processing in the superposition processing of the preliminary cleaning processing and the agitation cleaning processing for the reaction chamber 12. In response to the processing time of the stacking process reaching a preset first time threshold (e.g., 1-180 seconds), the driving circuit may determine that the upper portion of the reaction chamber 12 has been sufficiently cleaned, thereby controlling the bypass switch 316 to disengage from the first contact 317 and continuously contact the second contact 318, thereby terminating the preliminary cleaning process and the top rf cleaning process, and performing the side rf supplementary cleaning process on the reaction chamber 12.
Further, in some embodiments of the present invention, before performing the above-mentioned superposition processing, the technician may further perform superposition processing experiments for a plurality of different processing times on one or more reaction chamber samples, so as to detect a cleaning effect (especially a cleaning effect of an upper portion of the reaction chamber 12) and a damage effect of each reaction chamber sample after the corresponding superposition processing experiment, and determine the first time threshold according to the cleaning effect and the damage effect.
Furthermore, in some embodiments of the present invention, when performing an experiment of overlapping two identical reaction chamber samples with a plurality of different processing times, a technician may keep the lateral rf time the same, set the top rf time to 1/5, 1/4, 1/3, and 1/2 of the lateral rf time, and compare the cleaning effect and the damage effect of the two samples, so as to determine the first time threshold according to the comprehensive optimal solution of the cleaning effect and the damage effect.
Optionally, in other embodiments of the present invention, when performing the superposition processing experiment of multiple different processing times on two identical reaction chamber samples, the technician may also keep the top rf time the same, set the side rf time to be 1/5, 1/4, 1/3, and 1/2 of the top rf time, and compare the cleaning effect and the damage effect thereof, respectively, so as to determine the first time threshold according to the comprehensive optimal solution of the cleaning effect and the damage effect.
In addition, in some embodiments of the present invention, the driving circuit may monitor SiF in the reaction chamber 12 in real time during the process of performing the side RF supplementary cleaning treatment to the reaction chamber 12 4 Concentration. Responsive to the SiF 4 The drive circuit may determine that the lower portion of the reaction chamber 12 is also sufficiently cleaned to terminate the above-described side rf supplemental cleaning process when the concentration reaches the valley or is below a preset second concentration threshold. Here, the response is SiF 4 The description of the concentration reaching the valley or below the preset second concentration threshold is merely a non-limiting manner of description, including but not limited to SiF 4 The instant the concentration reaches the valley or is below the preset second concentration threshold, and its time range of + -10 seconds. The second concentration threshold may be calibrated comprehensively according to the cleaning effect of the reaction chamber 12 and/or the related index of the Feed Through damage condition, and the principle and the calibration mode thereof do not relate to the technical improvement of the present invention, and are not described herein.
Further, in some embodiments of the invention, in response to the SiF described above 4 The drive circuit may also preferably provide a lateral rf cleaning process to the reaction chamber 12 for a second time threshold when the concentration reaches a threshold or below a predetermined second concentration threshold, and terminate the entire cleaning process to consolidate and enhance the cleaning effect of the lower portion of the reaction chamber 12. Here, the second time threshold may also be determined by a technician performing a plurality of lateral rf cleaning experiments with different processing times on one or more reaction chamber samples, according to the cleaning effect (especially the cleaning effect of the lower portion of the reaction chamber 12) and the damage effect of each reaction chamber sample, where the value is generally within the time range of 5% -150% of the total cleaning time, and the principle and flow are similar to the operation of calibrating the first time threshold, which is not described herein.
Referring to fig. 1, in the embodiment shown in fig. 1, the driving circuit may further include a third branch 313, a fourth branch 314, and a power divider 315. One end of the third branch 313 is connected to the third contact 317 and the other end thereof is connected to the top coil 13 at the top of the reaction chamber 12. One end of the fourth branch 314 is connected to the third contact 319 via an on-off switch, and the other end thereof is connected to the second coil 14 on the side of the reaction chamber 12. The on-off switch is turned off when the change-over switch 316 contacts the first contact 317 and/or the second contact 318 and turned on when the change-over switch 316 contacts the third contact 319, thereby preventing the power splitter 315 from oscillating during cleaning of the reaction chamber 12. The power splitter 315 is disposed in the third branch 313 and the fourth branch 314, and is used for splitting and adjusting the power provided to the third branch 313 and the fourth branch 314.
In a process flow for processing a semiconductor device, the driving circuit may control the transfer switch 316 to contact the third contact 319 to connect the third branch 313 and the fourth branch 314 to the rf power source 323 and distribute power supplied to the top coil 13 and the side coil 14 via the power divider 315, thereby generating plasma of a target intensity and a target distribution in the reaction chamber 12 via the side coil 14 and the top coil 13.
In summary, compared with the current cleaning method of the reaction chamber in the art, the method of the invention can improve the cleaning effect of the reaction chamber and increase the Nitrogen Fluoride (NF) without increasing the cleaning time 3 ) To reduce the dissociation of Nitrogen Fluoride (NF) 3 ) The use amount of the catalyst is improved, so that the economical efficiency and the high efficiency of cleaning the reaction cavity are improved.
While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood and appreciated by those skilled in the art.
Those of skill in the art would understand that information, signals, and data may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be referenced throughout the above description may be represented by voltages, currents, electromagnetic waves, magnetic fields or particles, optical fields or particles, or any combination thereof.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (11)
1. A method for cleaning a reaction chamber, comprising the steps of:
performing primary cleaning treatment on the reaction cavity through a remote plasma system;
the reaction chamber is subjected to superposition of the preliminary cleaning treatment and the stirring cleaning treatment, wherein the stirring cleaning treatment consists of top radio frequency cleaning treatment and side radio frequency cleaning treatment which are alternately performed; and
and terminating the preliminary cleaning process and the top radio frequency cleaning process to perform the lateral radio frequency cleaning process on the reaction chamber.
2. The cleaning method of claim 1, wherein the remote plasma system includes a pretreatment chamber disposed at a front end of the reaction chamber, and the step of performing a preliminary cleaning process on the reaction chamber via the remote plasma system includes:
inputting a first gas containing fluorine into the pretreatment chamber;
ionizing the fluorine-containing gas via the pretreatment chamber to obtain a precursor containing F + Is a second gas of (a); and
the second gas is input into the reaction chamber to perform the preliminary cleaning process on the reaction chamber via the remote plasma system.
3. The cleaning method according to claim 2, wherein the step of performing the superimposed process of the preliminary cleaning process and the agitation cleaning process on the reaction chamber comprises:
monitoring SiF in the reaction chamber 4 Concentration; and
responsive to the SiF 4 And when the concentration reaches a peak value or is higher than a preset first concentration threshold value, alternately providing a top radio frequency and a side radio frequency for the reaction cavity so as to perform the primary cleaning treatment and the superposition treatment of the stirring cleaning treatment on the reaction cavity.
4. The cleaning method of claim 3, wherein terminating the preliminary cleaning process and the top rf cleaning process to perform the lateral rf cleaning process on the reaction chamber comprises:
counting the processing time of the superposition processing; and
and stopping the preliminary cleaning treatment and the top radio frequency cleaning treatment to perform the side radio frequency cleaning treatment on the reaction chamber in response to the treatment time of the superposition treatment reaching a preset first time threshold.
5. The cleaning method according to claim 4, characterized in that before the superposing treatment is performed, the cleaning method further comprises the steps of:
performing a superposition processing experiment of a plurality of different processing times on one or more reaction cavity samples;
detecting the cleaning effect and the damage effect of each reaction cavity sample after corresponding superposition treatment experiments; and
and determining the first time threshold according to the cleaning effect and the damage effect.
6. The cleaning method of claim 4, wherein said step of performing said lateral rf cleaning process on said reaction chamber further comprises:
monitoring SiF in the reaction chamber 4 Concentration; and
responsive to the SiF 4 Concentration reachesAnd (3) stopping the side radio frequency cleaning treatment when the valley value is lower than a preset second concentration threshold value.
7. The cleaning method of claim 6, wherein the responding to the SiF 4 The step of terminating the lateral rf cleaning process includes:
responsive to the SiF 4 And when the concentration reaches a valley value or is lower than a preset second concentration threshold value, providing side radio frequency cleaning treatment for the reaction cavity for a second time threshold value, and then terminating the side radio frequency cleaning treatment.
8. A computer readable storage medium having stored thereon computer instructions which, when executed by a processor, perform a method of cleaning a reaction chamber according to any one of claims 1 to 7.
9. The utility model provides a drive circuit of reaction chamber, its characterized in that includes radio frequency power, change-over switch to and two at least branches, wherein, first branch road connection the first coil at reaction chamber top, second branch road connection the second coil of reaction chamber side, drive circuit is configured as:
disconnecting the first branch and the second branch to perform preliminary cleaning treatment on the reaction cavity through a remote plasma system;
on the basis of performing the preliminary cleaning treatment, the first branch and the second branch are alternately connected to the radio frequency power supply so as to perform superposition treatment of the preliminary cleaning treatment and stirring cleaning treatment on the reaction chamber, wherein the stirring cleaning treatment consists of top radio frequency cleaning treatment and side radio frequency cleaning treatment which are alternately performed; and
and in response to terminating the preliminary cleaning process, disconnecting the first branch and connecting the second branch to the radio frequency power source to perform the lateral radio frequency cleaning process on the reaction chamber.
10. The drive circuit of claim 9, further comprising a third leg, a fourth leg, and a power divider, wherein the third leg is connected to the first coil at the top of the reaction chamber, the fourth leg is connected to the second coil laterally of the reaction chamber, the power divider is disposed in the third leg and the fourth leg, the drive circuit further configured to:
the third branch and the fourth branch are connected to the radio frequency power supply, and power provided to the first coil and the second coil is distributed through the power distributor so as to generate plasma in the reaction cavity through the first coil and the second coil.
11. A semiconductor processing apparatus, comprising:
the reaction cavity is connected with the remote plasma system;
the first coil is arranged at the top of the reaction cavity;
the second coil is arranged at the side of the reaction cavity; and
a drive circuit for a reaction chamber according to claim 9 or 10.
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