CN103866398A - 一种碳化硅晶片腐蚀的方法和装置 - Google Patents
一种碳化硅晶片腐蚀的方法和装置 Download PDFInfo
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- CN103866398A CN103866398A CN201410116764.7A CN201410116764A CN103866398A CN 103866398 A CN103866398 A CN 103866398A CN 201410116764 A CN201410116764 A CN 201410116764A CN 103866398 A CN103866398 A CN 103866398A
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- 230000007797 corrosion Effects 0.000 title claims abstract description 63
- 238000005260 corrosion Methods 0.000 title claims abstract description 63
- 235000012431 wafers Nutrition 0.000 title claims abstract description 49
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 24
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 60
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims abstract description 31
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 22
- 239000003518 caustics Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims description 78
- 239000003153 chemical reaction reagent Substances 0.000 claims description 65
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- 230000001681 protective effect Effects 0.000 claims description 19
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 230000001012 protector Effects 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 235000011121 sodium hydroxide Nutrition 0.000 description 17
- 230000007547 defect Effects 0.000 description 10
- 230000003628 erosive effect Effects 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 102000029749 Microtubule Human genes 0.000 description 1
- 108091022875 Microtubule Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 210000004688 microtubule Anatomy 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004223 radioprotective effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000002910 structure generation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
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CN201410116764.7A CN103866398B (zh) | 2014-03-26 | 2014-03-26 | 一种碳化硅晶片腐蚀的方法和装置 |
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CN201410116764.7A CN103866398B (zh) | 2014-03-26 | 2014-03-26 | 一种碳化硅晶片腐蚀的方法和装置 |
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CN103866398A true CN103866398A (zh) | 2014-06-18 |
CN103866398B CN103866398B (zh) | 2016-09-28 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113122929A (zh) * | 2020-06-05 | 2021-07-16 | 北京世纪金光半导体有限公司 | 一种新型半导体单晶片位错密度检测腐蚀工装及方法 |
CN114262942A (zh) * | 2022-03-03 | 2022-04-01 | 浙江大学杭州国际科创中心 | 一种碳化硅晶片腐蚀化系统 |
CN118782507A (zh) * | 2024-09-11 | 2024-10-15 | 苏州矩阵光电有限公司 | 用于晶圆分区腐蚀的隔离网筒及腐蚀方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09199559A (ja) * | 1996-01-22 | 1997-07-31 | Mitsubishi Materials Corp | 半導体単結晶膜の結晶欠陥評価方法 |
CN1635180A (zh) * | 2004-12-30 | 2005-07-06 | 北京航空航天大学 | 去除热障涂层中陶瓷层的方法 |
CN102569055A (zh) * | 2010-12-14 | 2012-07-11 | 北京天科合达蓝光半导体有限公司 | 一种SiC单晶平整度的调整方法—湿法刻蚀 |
CN103088426A (zh) * | 2013-01-23 | 2013-05-08 | 保定科瑞晶体有限公司 | 一种减少碳化硅晶体籽晶生长面缺陷的方法 |
CN203741460U (zh) * | 2014-03-26 | 2014-07-30 | 山东天岳晶体材料有限公司 | 一种晶片腐蚀用坩埚装置 |
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2014
- 2014-03-26 CN CN201410116764.7A patent/CN103866398B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09199559A (ja) * | 1996-01-22 | 1997-07-31 | Mitsubishi Materials Corp | 半導体単結晶膜の結晶欠陥評価方法 |
CN1635180A (zh) * | 2004-12-30 | 2005-07-06 | 北京航空航天大学 | 去除热障涂层中陶瓷层的方法 |
CN102569055A (zh) * | 2010-12-14 | 2012-07-11 | 北京天科合达蓝光半导体有限公司 | 一种SiC单晶平整度的调整方法—湿法刻蚀 |
CN103088426A (zh) * | 2013-01-23 | 2013-05-08 | 保定科瑞晶体有限公司 | 一种减少碳化硅晶体籽晶生长面缺陷的方法 |
CN203741460U (zh) * | 2014-03-26 | 2014-07-30 | 山东天岳晶体材料有限公司 | 一种晶片腐蚀用坩埚装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113122929A (zh) * | 2020-06-05 | 2021-07-16 | 北京世纪金光半导体有限公司 | 一种新型半导体单晶片位错密度检测腐蚀工装及方法 |
CN114262942A (zh) * | 2022-03-03 | 2022-04-01 | 浙江大学杭州国际科创中心 | 一种碳化硅晶片腐蚀化系统 |
CN114262942B (zh) * | 2022-03-03 | 2022-07-15 | 浙江大学杭州国际科创中心 | 一种碳化硅晶片腐蚀化系统 |
CN118782507A (zh) * | 2024-09-11 | 2024-10-15 | 苏州矩阵光电有限公司 | 用于晶圆分区腐蚀的隔离网筒及腐蚀方法 |
CN118782507B (zh) * | 2024-09-11 | 2024-11-12 | 苏州矩阵光电有限公司 | 用于晶圆分区腐蚀的隔离网筒及腐蚀方法 |
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CN103866398B (zh) | 2016-09-28 |
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Effective date of registration: 20190327 Address after: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee after: Shandong Tianyue Advanced Material Technology Co., Ltd. Address before: 250118 the middle part of Mei Li Lake, Huaiyin District, Ji'nan, Shandong Patentee before: Shandong Tianyue Crystal Material Co., Ltd. |
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Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |