CN203768489U - 一种湿法腐蚀碳化硅晶片的装置 - Google Patents
一种湿法腐蚀碳化硅晶片的装置 Download PDFInfo
- Publication number
- CN203768489U CN203768489U CN201420142301.3U CN201420142301U CN203768489U CN 203768489 U CN203768489 U CN 203768489U CN 201420142301 U CN201420142301 U CN 201420142301U CN 203768489 U CN203768489 U CN 203768489U
- Authority
- CN
- China
- Prior art keywords
- crucible
- silicon carbide
- thermopair
- burner hearth
- carbide wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000001039 wet etching Methods 0.000 title claims abstract description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 20
- 239000003153 chemical reaction reagent Substances 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 12
- 238000004321 preservation Methods 0.000 abstract 3
- 239000003518 caustics Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 25
- 230000007797 corrosion Effects 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 14
- 239000013078 crystal Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003245 working effect Effects 0.000 description 2
- 102000029749 Microtubule Human genes 0.000 description 1
- 108091022875 Microtubule Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 210000004688 microtubule Anatomy 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Weting (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420142301.3U CN203768489U (zh) | 2014-03-26 | 2014-03-26 | 一种湿法腐蚀碳化硅晶片的装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420142301.3U CN203768489U (zh) | 2014-03-26 | 2014-03-26 | 一种湿法腐蚀碳化硅晶片的装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203768489U true CN203768489U (zh) | 2014-08-13 |
Family
ID=51285699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201420142301.3U Expired - Lifetime CN203768489U (zh) | 2014-03-26 | 2014-03-26 | 一种湿法腐蚀碳化硅晶片的装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN203768489U (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106480508A (zh) * | 2016-12-22 | 2017-03-08 | 苏州奥趋光电技术有限公司 | 一种用于氮化铝晶体的湿法腐蚀装置 |
CN113122929A (zh) * | 2020-06-05 | 2021-07-16 | 北京世纪金光半导体有限公司 | 一种新型半导体单晶片位错密度检测腐蚀工装及方法 |
CN113550012A (zh) * | 2021-07-28 | 2021-10-26 | 浙江大学杭州国际科创中心 | 一种用于碱蒸汽腐蚀碳化硅晶片的装置 |
-
2014
- 2014-03-26 CN CN201420142301.3U patent/CN203768489U/zh not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106480508A (zh) * | 2016-12-22 | 2017-03-08 | 苏州奥趋光电技术有限公司 | 一种用于氮化铝晶体的湿法腐蚀装置 |
CN113122929A (zh) * | 2020-06-05 | 2021-07-16 | 北京世纪金光半导体有限公司 | 一种新型半导体单晶片位错密度检测腐蚀工装及方法 |
CN113550012A (zh) * | 2021-07-28 | 2021-10-26 | 浙江大学杭州国际科创中心 | 一种用于碱蒸汽腐蚀碳化硅晶片的装置 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN203768489U (zh) | 一种湿法腐蚀碳化硅晶片的装置 | |
CN110284186B (zh) | 一种直拉单晶炉及其纵向温度梯度的测定控制方法 | |
CN107109694B (zh) | 晶体生长装置、碳化硅单晶的制造方法、碳化硅单晶基板和碳化硅外延基板 | |
CN104451858A (zh) | 高压原位合成多功能晶体生长系统 | |
Wang et al. | Anisotropic three-dimensional thermal stress modeling and simulation of homoepitaxial AlN single crystal growth by the physical vapor transport method | |
CN111118604A (zh) | 一种GaN晶体生长装置 | |
Von Dollen et al. | A new system for sodium flux growth of bulk GaN. Part I: System development | |
US20110179992A1 (en) | Crystal growth methods and systems | |
Williams et al. | Heat transfer in silicon Czochralski crystal growth | |
CN206751974U (zh) | 一种生长碳化硅晶体的装置 | |
TWI668442B (zh) | 薄片形成設備、用於測量熔體表面的薄片的厚度的系統及用於在薄片形成設備中測定材料界面的位置的方法 | |
CN102507033A (zh) | 液态金属冷却定向凝固过程中铸件温度的测量方法 | |
JP6119732B2 (ja) | SiC単結晶及びその製造方法 | |
JP5630369B2 (ja) | 単結晶製造装置 | |
Lee et al. | Effect of TaC-coated crucible on SiC single crystal growth | |
JP2985040B2 (ja) | 単結晶製造装置及び製造方法 | |
CN206467334U (zh) | 一种防止硅蒸汽溢出的坩埚 | |
CN105696081B (zh) | 锑化铝材料的制备方法 | |
Yamazawa et al. | Thermal analysis of the heater-induced realization of the tin fixed point | |
Bodnar et al. | Growth, structure, and thermal expansion anisotropy of FeIn 2 Se 4 single crystals | |
Alchagirov et al. | The density and surface tension of liquid lithium at melting temperature. | |
CN103866398B (zh) | 一种碳化硅晶片腐蚀的方法和装置 | |
JP2012004439A (ja) | シリコンウエーハのpn判定方法 | |
CN205711037U (zh) | 一种减轻顶部保温材料受腐蚀的热场结构 | |
Kinoshita et al. | Increase of Si0. 5Ge0. 5 Bulk Single Crystal Size as Substrates for Strained Ge Epitaxial Layers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Device for wet etching of silicon carbide wafer Effective date of registration: 20170912 Granted publication date: 20140813 Pledgee: Prudential Bank Ji'nan branch of Limited by Share Ltd. Pledgor: SICC Co.,Ltd. Registration number: 2017370000138 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20180208 Granted publication date: 20140813 Pledgee: Prudential Bank Ji'nan branch of Limited by Share Ltd. Pledgor: SICC Co.,Ltd. Registration number: 2017370000138 |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co.,Ltd. Address before: 3-409, Yinhe building, 2008 Xinluo street, hi tech Zone, Jinan City, Shandong Province Patentee before: SICC Co.,Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20140813 |