CN103855089A - Reverse conducting insulated gate bipolar transistor and manufacturing method thereof - Google Patents
Reverse conducting insulated gate bipolar transistor and manufacturing method thereof Download PDFInfo
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- CN103855089A CN103855089A CN201210519817.0A CN201210519817A CN103855089A CN 103855089 A CN103855089 A CN 103855089A CN 201210519817 A CN201210519817 A CN 201210519817A CN 103855089 A CN103855089 A CN 103855089A
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
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Abstract
A reverse conducting insulated gate bipolar transistor and a manufacturing method thereof are disclosed, the method comprises the following steps: providing a heavily doped substrate, forming a buffer layer on the surface of the heavily doped substrate, wherein the thickness of the buffer layer is more than 1 mu m, and the peak concentration is 1e14/cm3～3e16/cm3And thinning the heavily doped substrate. The thickness of the buffer layer can be made thicker according to the voltage-resistant level of the device, and the concentration can be made more accurate, so that the reverse conducting type insulated gate bipolar transistor can be further optimizedThe on-state voltage drop and the conduction loss of the reverse conducting type insulated gate bipolar transistor are improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly, relate to a kind of contrary type igbt and preparation method thereof of leading.
Background technology
The contrary type igbt (RC-IGBT that leads, Reverse Conducting-Insulated Gate Bipolar Transistor) be to there is international prospective a kind of New insulated grid bipolar transistor (IGBT, Insulated Gate Bipolar Transistor) device, it is by traditional fast recovery diode (FRD being packaged together with igbt chip inverse parallel, Fast Recovery Diode) be integrated on same chip with IGBT, improve power density, reduce chip area, manufacture and packaging cost, improved the reliability of device simultaneously.
The structure of existing RC-IGBT is divided into two kinds of the RC-IGBT that have the RC-IGBT of resilient coating and there is no resilient coating.
Wherein, do not have on-state voltage drop and the conduction loss of RC-IGBT of resilient coating larger, for there is no the RC-IGBT of resilient coating, the RC-IGBT with resilient coating can reduce on-state voltage drop and conduction loss by resilient coating.
The manufacture method of the existing RC-IGBT with resilient coating (take the RC-IGBT of P+ collector region as example), comprising:
On N-substrate, make the Facad structure of device, then from substrate back, by methods such as grinding, corrosion by substrate thinning to required thickness, adopt again ion implantation technology and annealing process to form N+ resilient coating and the P+ collector region at the back side, then adopt again photoetching process, etch N+ shorting region window, then carry out primary ions and inject formation N+ shorting region.
But the resilient coating of making by said method is too thin, substantially can not be greater than 1 micron, and ion doping concentration in described resilient coating is relevant with annealing process, makes the ion doping concentration in resilient coating wayward in ideal range.Therefore on-state voltage drop and the conduction loss of the RC-IGBT with resilient coating, making by said method are still undesirable.
Summary of the invention
The embodiment of the present invention provides a kind of RC-IGBT and preparation method thereof, has solved the problems of the prior art, has improved on-state voltage drop and the conduction loss of RC-IGBT, has improved the performance of device.
For achieving the above object, the invention provides following technical scheme:
A manufacture method of RC-IGBT, comprising: a heavy doping substrate is provided; On described heavy doping substrate surface, form resilient coating, the thickness of described resilient coating is greater than 1 μ m, and peak concentration is 1e14/cm～3e16/cm; Heavy doping substrate described in attenuate.Preferably, the thickness of described resilient coating is 5 μ m～30 μ m.
Preferably, forming the technique that adopts of resilient coating is epitaxy technique, after described heavy doping substrate surface forms resilient coating, before heavy doping substrate, also comprises: form lightly-doped layer at described buffer-layer surface described in attenuate; On described lightly-doped layer, form the Facad structure of RC-IGBT.
A kind of RC-IGBT, comprising: collector region, and described collector region is a heavily doped region; Resilient coating, described resilient coating is positioned on the surface of described collector region, and the thickness of described resilient coating is greater than 1 μ m, and peak concentration is 1e14/cm～3e16/cm.
Preferably, described RC-IGBT also comprises:
Lightly-doped layer, described lightly-doped layer is positioned on described buffer-layer surface; The Facad structure of RC-IGBT, the Facad structure of described RC-IGBT is positioned on described lightly-doped layer; Shorting region, described shorting region gos deep in described buffer-layer surface, and the back side of described shorting region and the back side of described resilient coating flush; Collector electrode, described collector electrode is positioned at the back side of described collector region and shorting region.Preferably, the thickness of described collector region is 0.5 μ m～1 μ m, and the thickness of described lightly-doped layer is 70 μ m～300 μ m.
A kind of RC-IGBT, comprising:
Shorting region, described shorting region is a heavily doped region; Resilient coating, described resilient coating is positioned on the surface of described shorting region, and the thickness of described resilient coating is greater than 1 μ m, and peak concentration is 1e14/cm～3e16/cm.
Preferably, described RC-IGBT also comprises: lightly-doped layer, and described lightly-doped layer is positioned on described buffer-layer surface; The Facad structure of RC-IGBT, the Facad structure of described RC-IGBT is positioned on described lightly-doped layer; Collector region, described collector region is goed deep in described buffer-layer surface, and the back side of described collector region and the back side of described resilient coating flush; Collector electrode, described collector electrode is positioned at the back side of described collector region and shorting region.Preferably, the thickness of described shorting region is 0.5 μ m～1 μ m, and the thickness of described lightly-doped layer is 70 μ m～300 μ m.
From such scheme, the manufacture method of the RC-IGBT that the application provides is to form resilient coating on heavy doping substrate surface, and the thickness of described resilient coating is greater than 1 μ m, specifically can determine according to the requirement of withstand voltage of device, then heavy doping substrate described in attenuate.Owing to being the resilient coating forming on heavy doping substrate surface, the thickness of described resilient coating is greater than 1 μ m, so the thickness of described resilient coating is no longer subject to the restriction of ion implantation technology, the thickness of described resilient coating can be controlled in a larger scope.Accordingly, compared with prior art, it is thicker that the thickness of described resilient coating can do.And the method does not need annealing to activate the doping ion in resilient coating, and the peak concentration that therefore can accurately control ion doping is 1e14/cm～3e16/cm.By the adjustment of the manufacture method to RC-IGBT and manufacture craft, can further optimize on-state voltage drop and the conduction loss of RC-IGBT, improve the performance of described RC-IGBT.
Accompanying drawing explanation
The schematic flow sheet of a kind of RC-IGBT manufacture method that Fig. 1 provides for the embodiment of the present application;
A kind of RC-IGBT structural representation that Fig. 2 provides for the embodiment of the present application;
The another kind of RC-IGBT structural representation that Fig. 3 provides for the embodiment of the present application.
Embodiment
As described in background, on-state voltage drop and the conduction loss of the RC-IGBT with resilient coating making by existing method are still undesirable.
Inventor studies discovery, occurs that the reason of this problem is, in the manufacture method of the existing RC-IGBT with resilient coating, is take N-substrate as basis, then the resilient coating forming at described N-substrate back with ion implantation technology.Owing to being subject to the restriction of ion implantation technology and thin slice technique self, the thickness of described resilient coating is difficult to exceed 1 μ m, and prior art also needs annealing to activate the doping ion in resilient coating after ion implantation technology, causes the ion concentration in resilient coating wayward.And on-state voltage drop and the conduction loss with the RC-IGBT of resilient coating are related with thickness and the quality of resilient coating, existing method has limited thickness and the quality of resilient coating, on-state voltage drop and the conduction loss of the RC-IGBT with resilient coating making by existing method are also restricted, and do not reach desirable level.
Inventor further studies discovery, by changing the manufacture craft of the existing RC-IGBT with resilient coating, can make more than the thickness of resilient coating reaches 1 μ m, and then further optimize on-state voltage drop and the conduction loss of RC-IGBT, the performance that improves device, further satisfies the demands it.
Based on this, the embodiment of the present invention provides the manufacture method of a kind of RC-IGBT, comprising:
One heavy doping substrate is provided;
On described heavy doping substrate surface, form resilient coating, the thickness of described resilient coating is greater than 1 μ m, and peak concentration is 1e14/cm～3e16/cm;
Heavy doping substrate described in attenuate.
In said method, owing to being the resilient coating forming on heavy doping substrate surface, so the thickness of described resilient coating is no longer subject to the restriction of ion implantation technology, that can do thicklyer (is greater than 1 μ m).Accordingly, compared with prior art, the thickness of described resilient coating can be controlled in a larger scope.And the method does not need annealing to activate the doping ion in resilient coating, and the peak concentration that therefore can accurately control ion doping is 1e14/cm～3e16/cm.By the adjustment of the manufacture method to RC-IGBT and manufacture craft, can further optimize on-state voltage drop and the conduction loss of RC-IGBT, improve the performance of described RC-IGBT.
It is more than the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
A lot of details are set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, and therefore the present invention is not subject to the restriction of following public specific embodiment.
The embodiment of the present application provides the manufacture method of a kind of RC-IGBT, as shown in Figure 1, comprising:
One heavy doping substrate is provided.
On described heavy doping substrate surface, form resilient coating, the thickness of described resilient coating is greater than 1 μ m, and the peak concentration of described resilient coating is 1e14/cm～3e16/cm.Preferably, the thickness of described resilient coating is 5 μ m～30 μ m, preferred, and the thickness of described resilient coating is 20 μ m.The peak concentration of described resilient coating is 1.5e14/cm～2.5e16/cm.Now, the withstand voltage scope of described RC-IGBT is not more than 2.5KV, it should be noted that, according to device withstand voltage difference, the thickness of described resilient coating can be also other optimal value.
Heavy doping substrate described in attenuate, the heavy doping substrate thickness after attenuate is 0.5 μ m～1 μ m, preferred, the heavy doping substrate thickness after attenuate is 0.8 μ m.
From such scheme, the manufacture method of the RC-IGBT that the application provides is to form resilient coating on heavy doping substrate surface, and the thickness of described resilient coating is thicker, then heavy doping substrate described in attenuate.Owing to being the resilient coating forming on heavy doping substrate surface, so the thickness of described resilient coating is no longer subject to the restriction of ion implantation technology, can do thicklyer.Accordingly, compared with prior art, the thickness of described resilient coating can be controlled in a larger scope.And the method does not need annealing to activate the doping ion in resilient coating, and the peak concentration that therefore can accurately control ion doping is 1e14/cm～3e16/cm.By the adjustment of the manufacture method to RC-IGBT and manufacture craft, can further optimize on-state voltage drop and the conduction loss of RC-IGBT, improve the performance of described RC-IGBT.
Another embodiment of the application discloses the manufacture method of a kind of RC-IGBT of P type substrate, and the method comprises:
One heavy doping substrate is provided, and described heavy doping substrate is P type heavy doping substrate, and the heavy doping substrate that the present embodiment provides is thicker, to avoid in follow-up manufacturing process due to the too thin situation that occurs fragment of substrate.
Adopt epitaxy technique to form resilient coating on described heavy doping substrate surface, described resilient coating is the heavily doped resilient coating of N-type, and the thickness of described resilient coating is greater than 1 μ m, and preferred, the thickness of described resilient coating is 10 μ m.The peak concentration of described resilient coating is 1e14/cm～3e16/cm, is preferably 2e16/cm.The present embodiment is the resilient coating forming on heavy doping substrate surface, so the thickness of described resilient coating is no longer subject to the restriction of ion implantation technology, can be greater than 1 μ m.Accordingly, compared with prior art, due to the thickness of resilient coating described in the present embodiment can do thicker.And the method that adopts epitaxy technique to form resilient coating on described heavy doping substrate surface does not need annealing to activate the doping ion in resilient coating, and the peak concentration that therefore can accurately control ion doping is 1e14/cm～3e16/cm.By the adjustment of the manufacture method to RC-IGBT and manufacture craft, can further optimize on-state voltage drop and the conduction loss of RC-IGBT, improve the performance of described RC-IGBT.
Form lightly-doped layer at described buffer-layer surface, and on described lightly-doped layer, form the Facad structure of RC-IGBT.
Concrete, adopt epitaxy technique to form lightly-doped layer at described buffer-layer surface, described lightly-doped layer is N-type lightly-doped layer, and the thickness of described lightly-doped layer is 70 μ m～300 μ m, be preferably 150 μ m, it should be noted that, the difference requiring according to device withstand voltage, the thickness of described lightly-doped layer also can be chosen for other optimal value.
The process (take front as the RC-IGBT of planar gate is example) that forms the Facad structure of RC-IGBT on described lightly-doped layer, comprising:
On described lightly-doped layer surface, adopt thermal oxidation technology to form first grid dielectric layer, the material of described first grid dielectric layer can be silicon dioxide.On described first grid dielectric layer surface, form polysilicon layer, concrete, can adopt the techniques such as CVD, LPCVD or HDP to form polysilicon layer on described first grid dielectric layer surface.Described polysilicon layer and first grid dielectric layer are carried out to etching, form planar gate, and expose lightly-doped layer, described planar gate is polysilicon planar gate.Take described planar gate as mask, adopt ion implantation technology and annealing process to form well region in described lightly-doped layer surface, described well region is P type light dope well region.Take the photoresist with source region figure as mask, adopt ion implantation technology and annealing process to form source region in described well region, described source region is N-type heavy doping source region.Adopt oxidation technology or depositing technics to form second gate dielectric layer on described planar gate surface and sidewall, can form oxide layer on lightly-doped layer surface simultaneously.Adopt photoetching process and etching technics to remove the oxide layer on lightly-doped layer surface, expose source region, further etch away part source region, exposed portions serve well region, on described well region, source region and second gate dielectric layer surface, form source electrode, described source electrode and described well region and source region electrically contact, and complete the making of described RC-IGBT Facad structure.
After completing the making of described RC-IGBT Facad structure, can also carry out Passivation Treatment to described source electrode.
Heavy doping substrate described in employing chemical mechanical milling tech attenuate, the heavy doping substrate thickness after attenuate is 0.5 μ m～1 μ m, is preferably 0.8 μ m.In addition, can also adopt heavy doping substrate described in mechanical lapping or chemical etching technology attenuate.
In described heavy doping substrate, form shorting region window, expose described resilient coating, and form shorting region in described resilient coating.
Concrete, form photoresist layer at described heavy doping substrate back, the mask plate that utilization has shorting region graph window exposes to described photoresist layer, on described photoresist layer, form shorting region pattern of windows, adopt developing process, remove the photoresist at shorting region pattern of windows place, on described photoresist layer, form shorting region graph window, take the photoresist layer with shorting region graph window as mask, described heavy doping substrate is carried out to etching, form shorting region window, and expose resilient coating, the heavy doping substrate not being etched away is collector region, afterwards, take the photoresist layer with shorting region graph window as mask, adopt ion implantation technology, in described resilient coating, form shorting region, remove photoresist layer, and anneal, activate the doping ion in shorting region.Described shorting region is N-type heavy doping shorting region, and preferred, the doping ion of described shorting region is preferably phosphonium ion.
Form collector electrode on surface, described collector region and shorting region surface, described collector electrode and described collector region and shorting region electrically contact.
It should be noted that, in the manufacture method of existing RC-IGBT, on N-substrate, first make the Facad structure of device, then from methods such as grinding for substrate back, corrosion by substrate thinning to required thickness, adopt again ion implantation technology to form N+ resilient coating and the P+ collector region at the back side, then adopt again photoetching process, etch N+ shorting region window, then carry out primary ions and be infused in and form N+ shorting region in resilient coating.
Visible, after N+ resilient coating forms, the process that forms P+ collector region and N+ shorting region is all to carry out on the basis of N+ resilient coating, and machining damage and unavoidable crystal defect can cause N+ resilient coating to stop the inefficacy of field intensity ability, cause device performance to degenerate.
And the embodiment of the present application has changed the manufacture method of existing RC-IGBT, after forming resilient coating, the step of carrying out on described resilient coating basis only has the process that forms lightly-doped layer and shorting region, therefore, with respect to prior art, the embodiment of the present application has reduced machining damage and the crystal defect of resilient coating, has improved the quality of resilient coating, and then has promoted the performance of described RC-IGBT.
In addition, in prior art, for mesolow RC-IGBT, after forming the Facad structure of device, the operation of structure comprises: need attenuate N-substrate, and then form N+ resilient coating, P+ collector region and N+ shorting region, in the thinner enterprising line operate in device basis, the fragment rate of device is higher.
And in the embodiment of the present application, the operation of structure comprises: attenuate heavy doping substrate, and then form shorting region window, shorting region.Compared to existing technologies, simplify the operating procedure of structure, reduced accordingly the fragment rate in device fabrication processes.
Another embodiment of the application discloses the manufacture method of a kind of RC-IGBT of N-type substrate, and the method comprises:
One heavy doping substrate is provided, and described heavy doping substrate is N-type heavy doping substrate, and the heavy doping substrate that the present embodiment provides is thicker, to avoid in follow-up manufacturing process due to the too thin situation that occurs fragment of substrate.
Adopt epitaxy technique to form resilient coating on described heavy doping substrate surface, described resilient coating is the heavily doped resilient coating of N-type, and the thickness of described resilient coating is greater than 1 μ m, and preferred, the thickness of described resilient coating is 15 μ m.The peak concentration of described resilient coating is 1e14/cm～3e16/cm, is preferably 1.8e14/cm.The present embodiment is the resilient coating forming on heavy doping substrate surface, so the thickness of described resilient coating is no longer subject to the restriction of ion implantation technology, can be greater than 1 μ m.Accordingly, compared with prior art, the thickness of described resilient coating can be controlled in a larger scope.And the method that adopts epitaxy technique to form resilient coating on described heavy doping substrate surface does not need annealing to activate the doping ion in resilient coating, and the peak concentration that therefore can accurately control ion doping is 1e14/cm～3e16/cm.By the adjustment of the manufacture method to RC-IGBT and manufacture craft, can further optimize on-state voltage drop and the conduction loss of RC-IGBT, improve the performance of described RC-IGBT.
Form lightly-doped layer at described buffer-layer surface, and on described lightly-doped layer, form the Facad structure of RC-IGBT.
Concrete, adopt epitaxy technique to form lightly-doped layer at described buffer-layer surface, described lightly-doped layer is N-type lightly-doped layer, and the thickness of described lightly-doped layer is 70 μ m～300 μ m, is preferably 150 μ m.The process (take front as the RC-IGBT of trench gate is example) that forms the Facad structure of RC-IGBT on described lightly-doped layer, comprising:
Adopt photoetching and dry etch process to form groove in described lightly-doped layer surface, adopt thermal oxidation technology to form first grid dielectric layer at described channel bottom and sidewall surfaces, the material of described first grid dielectric layer can be silicon dioxide.Depositing polysilicon in described groove, form trench gate, and described trench gate is filled up described groove.Adopt ion implantation technology and annealing process to form well region in described lightly-doped layer surface, described well region is P type light dope well region.Adopt ion implantation technology and annealing process to form source region in described well region, described source region is N-type heavy doping source region.Adopt oxidation technology to form second gate dielectric layer on described trench gate surface, can form oxide layer on lightly-doped layer surface simultaneously.Adopt photoetching process and etching technics to remove and be positioned at the lip-deep oxide layer of described lightly-doped layer, exposed portions serve well region and source region.On described well region, source region and second gate dielectric layer surface, form source electrode, described source electrode and described well region and source region electrically contact, and complete the making of described RC-IGBT Facad structure.
After completing the making of described RC-IGBT Facad structure, can also carry out Passivation Treatment to described source electrode.
Heavy doping substrate described in employing chemical mechanical milling tech attenuate, the heavy doping substrate thickness after attenuate is 0.5 μ m～1 μ m, is preferably 0.8 μ m.In addition, can also adopt heavy doping substrate described in mechanical lapping or chemical etching technology attenuate.
Afterwards, in described heavy doping substrate, form collector region window, expose described resilient coating, and form collector region in described resilient coating.Described collector region is P type heavily doped region, and preferred, the doping ion of described collector region is preferably boron ion.
Concrete, form photoresist layer at described heavy doping substrate back, the mask plate that utilization has collector region graph window exposes to described photoresist layer, on described photoresist layer, form collector region pattern of windows, adopt developing process, remove the photoresist at pattern of windows place, collector region, on described photoresist layer, form collector region graph window, take the photoresist layer with collector region graph window as mask, described heavy doping substrate is carried out to etching, form collector region window, and expose resilient coating, the heavy doping substrate not being etched away is shorting region, afterwards, take the photoresist layer with collector region graph window as mask, adopt ion implantation technology, in described resilient coating, form collector region, remove photoresist layer, and anneal, activate the doping ion in collector region.Described collector region is P type heavy doping collector region, and preferred, the doping ion of described collector region is preferably boron ion.
Form collector electrode on surface, described collector region and shorting region surface, described collector electrode and described collector region and shorting region electrically contact.
The another embodiment of the application discloses a kind of RC-IGBT, as shown in Figure 2, comprising:
Collector region 101,101Wei Yi heavily doped region, described collector region, is specially a P type heavily doped region, and the thickness of described collector region 101 is 0.5 μ m～1 μ m;
Resilient coating 102, described resilient coating 102 is positioned on the surface of described collector region 101, is N-type heavy doping.And the thickness of described resilient coating is greater than 1 μ m, preferred, the thickness of described resilient coating 102 is 5 μ m～30 μ m.The peak concentration of described resilient coating is 1e14/cm～3e16/cm
3, be preferably 1.5e14/cm
3～2.5e16/cm
3.
It should be noted that, the thickness of described resilient coating 102 and doping content can also be adjusted according to the difference of device withstand voltage level, are not specifically limited at this.
Described RC-IGBT, also comprises:
Lightly-doped layer 103, it is upper that described lightly-doped layer 103 is positioned at described resilient coating 102 surfaces, be N-type light dope, and the thickness of described lightly-doped layer 103 is 70 μ m～300 μ m.
The Facad structure of RC-IGBT, the Facad structure of described RC-IGBT is positioned on described lightly-doped layer 103, and the present embodiment is take planar gate as example, and the Facad structure of described RC-IGBT comprises:
Be positioned at the well region 1031 on described lightly-doped layer 103 surfaces, be positioned at the source region 1032 on described well region 1031 surfaces, and the surface of the surface in described source region 1032, well region 1031 all with the flush of described lightly-doped layer 103; Be positioned at surperficial upper, the surperficial upper and lip-deep first grid dielectric layer 1033 in source region 1032 of well region 1031 of described lightly-doped layer 103, described first grid dielectric layer 1033 does not cover described source region 1032 and well region 1031 completely; Be positioned at the lip-deep planar gate 1034 of described first grid dielectric layer 1033, the making material of described planar gate 1034 is preferably polysilicon; Be coated on the second gate dielectric layer 1035 of described planar gate 1034 surfaces and sidewall; Be positioned at surperficial upper, the surperficial upper and lip-deep source electrode 1036 of well region 1031 in source region 1032 of described second gate dielectric layer 1035; described source electrode 1036 is metal electrode; and described source electrode can also be provided with passivation layer on 1036 surfaces, described source electrode 1036 is played to the effect of protection.
In the Facad structure of described RC-IGBT, described well region 1031 is P type light dope, and described source region 1032 is N-type heavy doping.
Shorting region 104, described shorting region 104 gos deep in described resilient coating 102 surfaces, and the back side of described shorting region 104 flushes with the back side of described resilient coating 102, and described shorting region is heavily doped region, is specially N-type heavy doping.
Collector electrode 105, described collector electrode 105 is positioned at the back side of described collector region 101 and shorting region 104, and described collector electrode 105 is metal electrode.
In the disclosed RC-IGBT of the present embodiment, because the thickness of described resilient coating 102 is greater than 1 μ m, compared with prior art, the thickness of described resilient coating 102 is thicker, and the method that adopts epitaxy technique to form resilient coating on described heavy doping substrate surface does not need annealing to activate the doping ion in resilient coating, and the peak concentration that therefore can accurately control ion doping is 1e14/cm
3～3e16/cm
3.By the adjustment of the manufacture method to RC-IGBT and manufacture craft, can further optimize on-state voltage drop and the conduction loss of RC-IGBT, improve the performance of described RC-IGBT.
The another embodiment of the application discloses another kind of RC-IGBT, as shown in Figure 3, comprising:
Shorting region 201, described shorting region 201 is a heavily doped region, is specially a N-type heavily doped region, and the thickness of described shorting region 201 is 0.5 μ m～1 μ m;
Described RC-IGBT, also comprises:
Lightly-doped layer 203, it is upper that described lightly-doped layer 203 is positioned at described resilient coating 202 surfaces, be N-type light dope, and the thickness of described lightly-doped layer 203 is 70 μ m～300 μ m.
The Facad structure of RC-IGBT, the Facad structure of described RC-IGBT is positioned on described lightly-doped layer 203, and the present embodiment is take trench gate as example, and the Facad structure of described RC-IGBT comprises:
Be positioned at the well region 2031 on described lightly-doped layer 203 surfaces, be positioned at the source region 2032 on described well region 2031 surfaces, and the flush of the surface in described source region 2032, well region 2031; Be formed on the groove in described lightly-doped layer 203, be positioned at the first grid dielectric layer 2033 of described channel bottom and sidewall; Be filled in described groove and be positioned at the lip-deep trench gate 2034 of described first grid dielectric layer 1033, the making material of described trench gate 2034 is preferably polysilicon; Be coated on the second gate dielectric layer 2035 on described trench gate 2034 surfaces; Be positioned at surperficial upper, the surperficial upper and lip-deep source electrode 2036 of well region 2031 in source region 2032 of described second gate dielectric layer 2035; described source electrode 2036 is metal electrode; and described source electrode can also be provided with passivation layer on 2036 surfaces, described source electrode 2036 is played to the effect of protection.
In the Facad structure of described RC-IGBT, described well region 2031 is P type light dope, and described source region 2032 is N-type heavy doping.
In the disclosed RC-IGBT of the present embodiment, because the thickness of described resilient coating 202 is greater than 1 μ m, compared with prior art, the thickness of described resilient coating 202 is thicker, and the method that adopts epitaxy technique to form resilient coating on described heavy doping substrate surface does not need annealing to activate the doping ion in resilient coating, and the peak concentration that therefore can accurately control ion doping is 1e14/cm
3～3e16/cm
3.By the adjustment of the manufacture method to RC-IGBT and manufacture craft, can further optimize on-state voltage drop and the conduction loss of RC-IGBT, improve the performance of described RC-IGBT.
It should be noted that, the doping type in described RC-IGBT can be:
Described collector region is the heavy doping of P type, and described resilient coating is N-type heavy doping, and described lightly-doped layer is N-type light dope, and described shorting region is N-type heavy doping, and described well region is P type light dope, and described source region is N-type heavy doping.
In the application's the present embodiment, the Facad structure of RC-IGBT can also be the Facad structure of other types, does not repeat them here.As long as meet the juche idea of the embodiment of the present invention, all within the protection range of the embodiment of the present invention.
The above embodiment, is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction.
Although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (22)
1. against leading a manufacture method for type igbt, it is characterized in that, comprising:
One heavy doping substrate is provided;
On described heavy doping substrate surface, form resilient coating, the thickness of described resilient coating is greater than 1 μ m, and peak concentration is 1e14/cm～3e16/cm;
Heavy doping substrate described in attenuate.
2. method according to claim 1, is characterized in that, the thickness of described resilient coating is 5 μ m～30 μ m.
3. method according to claim 2, is characterized in that, forming the technique that resilient coating adopts is epitaxy technique.
4. method according to claim 1, is characterized in that, after described heavy doping substrate surface forms resilient coating, before heavy doping substrate, also comprises described in attenuate:
Form lightly-doped layer at described buffer-layer surface;
On described lightly-doped layer, form contrary Facad structure of leading type igbt.
5. method according to claim 4, is characterized in that, forming the technique that lightly-doped layer adopts is epitaxy technique.
6. method according to claim 4, is characterized in that, the thickness of described lightly-doped layer is 70 μ m～300 μ m.
7. method according to claim 1, is characterized in that, the process of heavy doping substrate described in described attenuate, comprising:
Heavy doping substrate described in employing chemical mechanical milling tech attenuate, the heavy doping substrate thickness after attenuate is 0.5 μ m～1 μ m.
8. method according to claim 1, is characterized in that, after heavy doping substrate, also comprises described in described attenuate:
In described heavy doping substrate, form shorting region window, expose described resilient coating, and form shorting region in described resilient coating.
9. method according to claim 8, is characterized in that, in described heavy doping substrate, forms shorting region window, exposes described resilient coating, and in described resilient coating, forms the process of shorting region, comprising:
Form photoresist layer at described heavy doping substrate back;
The mask plate that utilization has shorting region graph window exposes to described photoresist layer;
Adopt developing process, on described photoresist layer, form shorting region graph window;
Take the photoresist layer with shorting region graph window as mask, described heavy doping substrate is carried out to etching, form shorting region window, and expose resilient coating, the heavy doping substrate not being etched away is collector region;
Take the photoresist layer with shorting region graph window as mask, adopt ion implantation technology, in described resilient coating, form shorting region;
Remove photoresist layer, anneal.
10. method according to claim 1, is characterized in that, after heavy doping substrate, also comprises described in described attenuate:
In described heavy doping substrate, form collector region window, expose described resilient coating, and form collector region in described resilient coating.
11. methods according to claim 10, is characterized in that, in described heavy doping substrate, form collector region window, expose described resilient coating, and in described resilient coating, form the process of collector region, comprising:
Form photoresist layer at described heavy doping substrate back;
The mask plate that utilization has collector region graph window exposes to described photoresist layer;
Adopt developing process, on described photoresist layer, form collector region graph window;
Take the photoresist layer with collector region graph window as mask, described heavy doping substrate is carried out to etching, form collector region window, and expose resilient coating, the heavy doping substrate not being etched away is shorting region;
Take the photoresist layer with collector region graph window as mask, adopt ion implantation technology, in described resilient coating, form collector region;
Remove photoresist layer, anneal.
12. according to method described in claim 9 or 11, it is characterized in that, also comprises:
Form collector electrode on surface, described collector region and shorting region surface.
13. methods according to claim 1, is characterized in that, described heavy doping substrate is the heavy doping of P type, and described resilient coating is N-type heavy doping, and described lightly-doped layer is N-type light dope, and described shorting region is N-type heavy doping.
14. methods according to claim 1, is characterized in that, described heavy doping substrate is N-type heavy doping, and described resilient coating is N-type heavy doping, and described lightly-doped layer is N-type light dope, and described shorting region is N-type heavy doping.
15. 1 kinds contrary leads type igbt, it is characterized in that, comprising:
Collector region, described collector region is a heavily doped region;
Resilient coating, described resilient coating is positioned on the surface of described collector region, and the thickness of described resilient coating is greater than 1 μ m, and peak concentration is 1e14/cm～3e16/cm.
16. lead type igbt according to contrary described in claim 15, it is characterized in that, also comprise:
Lightly-doped layer, described lightly-doped layer is positioned on described buffer-layer surface;
Contrary Facad structure of leading type igbt, described contrary Facad structure of leading type igbt is positioned on described lightly-doped layer;
Shorting region, described shorting region gos deep in described buffer-layer surface, and the back side of described shorting region and the back side of described resilient coating flush;
Collector electrode, described collector electrode is positioned at the back side of described collector region and shorting region.
17. lead type igbt according to contrary described in claim 16, it is characterized in that, the thickness of described collector region is 0.5 μ m～1 μ m, and the thickness of described lightly-doped layer is 70 μ m～300 μ m.
18. 1 kinds contrary leads type igbt, it is characterized in that, comprising:
Shorting region, described shorting region is a heavily doped region;
Resilient coating, described resilient coating is positioned on the surface of described shorting region, and the thickness of described resilient coating is greater than 1 μ m, and peak concentration is 1e14/cm～3e16/cm.
19. lead type igbt according to contrary described in claim 18, it is characterized in that, also comprise:
Lightly-doped layer, described lightly-doped layer is positioned on described buffer-layer surface;
Contrary Facad structure of leading type igbt, described contrary Facad structure of leading type igbt is positioned on described lightly-doped layer;
Collector region, described collector region is goed deep in described buffer-layer surface, and the back side of described collector region and the back side of described resilient coating flush;
Collector electrode, described collector electrode is positioned at the back side of described collector region and shorting region.
20. lead type igbt according to contrary described in claim 17, it is characterized in that, the thickness of described shorting region is 0.5 μ m～1 μ m, and the thickness of described lightly-doped layer is 70 μ m～300 μ m.
21. lead type igbt according to contrary described in claim 15 or 18, it is characterized in that, the thickness of described resilient coating is 5 μ m～30 μ m.
22. lead type igbt according to contrary described in claim 16 or 19, it is characterized in that, described collector region is the heavy doping of P type, and described shorting region is N-type heavy doping, and described resilient coating is N-type heavy doping, and described lightly-doped layer is N-type light dope.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105244273A (en) * | 2015-11-04 | 2016-01-13 | 株洲南车时代电气股份有限公司 | Method for manufacturing reverse-conducting insulated gate bipolar transistor (IGBT) |
| CN112466936A (en) * | 2020-12-21 | 2021-03-09 | 厦门芯一代集成电路有限公司 | High-voltage IGBT device and preparation method thereof |
-
2012
- 2012-12-06 CN CN201210519817.0A patent/CN103855089A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105244273A (en) * | 2015-11-04 | 2016-01-13 | 株洲南车时代电气股份有限公司 | Method for manufacturing reverse-conducting insulated gate bipolar transistor (IGBT) |
| CN105244273B (en) * | 2015-11-04 | 2018-10-26 | 株洲南车时代电气股份有限公司 | A kind of inverse preparation method for leading IGBT |
| CN112466936A (en) * | 2020-12-21 | 2021-03-09 | 厦门芯一代集成电路有限公司 | High-voltage IGBT device and preparation method thereof |
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Application publication date: 20140611 |