CN103849319A - High-purity silicon substrate polishing solution - Google Patents
High-purity silicon substrate polishing solution Download PDFInfo
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- CN103849319A CN103849319A CN201210508326.6A CN201210508326A CN103849319A CN 103849319 A CN103849319 A CN 103849319A CN 201210508326 A CN201210508326 A CN 201210508326A CN 103849319 A CN103849319 A CN 103849319A
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- silicon substrate
- purity silicon
- substrate polishing
- polishing fluid
- high purity
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a high-purity silicon substrate polishing solution, comprising, by weight, 50 to 80% silica sol, 1 to 10% of organic alkali, 0.1 to 3% of a pH regulator, 0.05 to 0.5% of a chelating agent, 0.01 to 1% of a dispersing agent and 0.001 to 0.1% an active agent, with the balance being water. The high-purity silicon substrate polishing solution overcomes the shortcomings of a low dilution ratio, a low speed and easy pollution of conventional polishing solutions and has the advantages of high purity, no metal impurity contamination, a high dilution ratio, a high and stable polishing speed, easy production and operation and reduction in cost.
Description
Technical field
The present invention relates to chemical mechanical polishing liquid technical field, be specifically related to a kind of high purity silicon substrate polishing fluid.
Background technology
CMP technology is a kind of processing method that is widely used in microelectronic, and in the polishing of various material substrate and the preparation process of unicircuit, all having played is all very important effect; Along with further densification, miniaturization and the high speed of IC device, for the planarization of wafer surface, must carry out chemically machinery polished to various different medias and metal, this has higher requirement and challenges just to CMP technical matters.
Also there is many deficiencies in current existing polishing fluid, subject matter is that material removing rate is lower, cyclicity is poor, extension rate is low, metal ion is stained etc., be difficult to meet the demand of high-end customer, the poor main manifestations of cyclicity is to decline very fast in the pH value of polishing fluid after long-time Circulated polishing, cause rate reduction, shorten the work-ing life of polishing fluid, if but the pH value that improves simply polishing fluid improves polishing speed, although polishing speed is improved, but because chemical action is excessively strong, can cause silicon wafer surface to produce more corrosion pit, cause surface quality to decline, next step operation for wafer has produced larger unfavorable factor, in addition, in the complete processing of modern silicon materials, raise the efficiency and become problem demanding prompt solution, efficiency height can improve productivity effect to a certain extent effectively, therefore, how can develop that polishing fluid cost is lower, polishing speed is higher, have extended cycle life, non-metallic ion stains, after polishing, crystal column surface quality is better, and can meet the polishing fluid of unicircuit planarization requirement, is problem anxious to be resolved in current CMP technology.
Summary of the invention
Goal of the invention: the object of the invention is in order to make up the deficiencies in the prior art, provide the high and polishing speed of a kind of polishing speed to stablize high purity silicon substrate polishing fluid.
Technical scheme: a kind of high purity silicon substrate polishing fluid, comprises following composition by weight percentage: silicon dioxide gel 50-80%, organic bases 1-10wt%, pH adjusting agent 0.1-3wt%, sequestrant 0.05-0.5wt%, dispersion agent 0.01-1%, promoting agent 0.001-0.1wt%, all the other are water.
As optimization, described organic bases is two or more in tetramethyl-aqua ammonia, α-amino isopropyl alcohol, hydroxyethylethylene diamine, diethylenetriamine, triethylene tetramine, tetraethylene pentamine, thanomin, diethanolamine, trolamine, piperazine.
As optimization, the particle diameter of described silicon dioxide gel is 50-100nm.
As optimization, the pH value of described pH adjusting agent is 11-12.
As optimization, described sequestrant is the one in glycine, nitrilotriacetic acid trisodium salt, EDTA.
As optimization, described dispersion agent is the one in AMP-95, tripoly phosphate sodium STPP, trisodium phosphate, methyl amyl alcohol, polyacrylamide.
As optimization, described promoting agent is nonionogenic tenside polyoxyethylene nonylphenol ether TX-10.
Beneficial effect: a kind of high purity silicon substrate polishing fluid of the present invention, overcome polishing fluid extension rate low, speed is low, the shortcoming of easily polluting, purity of the present invention is high, pollutes without metallic impurity, and extension rate is high, polishing speed is high and polishing speed stable, is easy to produce and operation, reduces costs.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described:
Embodiment 1:
The high purity silicon substrate polishing fluid of configuration 1000g, adding 500g particle diameter is 50nm silicon dioxide gel, 0.1g tetramethyl-aqua ammonia, 0.1g α-amino isopropyl alcohol, the buffered soln that pH is 11,0.05g glycine, 0.1g tripoly phosphate sodium STPP, 0.01g polyoxyethylene nonylphenol ether TX-10, all the other are water, stir and obtain required polishing fluid.
Embodiment 2:
The high purity silicon substrate polishing fluid of configuration 1000g, adding 650g particle diameter is 75nm silicon dioxide gel, 0.5g tetramethyl-aqua ammonia, 0.5g α-amino isopropyl alcohol, the buffered soln that pH is 11.5,0.3g glycine, 5g tripoly phosphate sodium STPP, 0.01g polyoxyethylene nonylphenol ether TX-10, all the other are water, stir and obtain required polishing fluid.
Embodiment 3:
The high purity silicon substrate polishing fluid of configuration 1000g, adding 800g particle diameter is 100nm silicon dioxide gel, 1g tetramethyl-aqua ammonia, 1g α-amino isopropyl alcohol, the buffered soln that pH is 12,0. 5g glycine, 10g tripoly phosphate sodium STPP, 0.01g polyoxyethylene nonylphenol ether TX-10, all the other are water, stir and obtain required polishing fluid.
Claims (7)
1. a high purity silicon substrate polishing fluid, is characterized in that: comprise by weight percentage following composition: silicon dioxide gel 50-80%, organic bases 1-10wt%, pH adjusting agent 0.1-3wt%, sequestrant 0.05-0.5wt%, dispersion agent 0.01-1%, promoting agent 0.001-0.1wt%, all the other are water.
2. a kind of high purity silicon substrate polishing fluid according to claim 1, it is characterized in that, described organic bases is two or more in tetramethyl-aqua ammonia, α-amino isopropyl alcohol, hydroxyethylethylene diamine, diethylenetriamine, triethylene tetramine, tetraethylene pentamine, thanomin, diethanolamine, trolamine, piperazine.
3. a kind of high purity silicon substrate polishing fluid according to claim 1, is characterized in that, the particle diameter of described silicon dioxide gel is 50-100nm.
4. a kind of high purity silicon substrate polishing fluid according to claim 1, is characterized in that, the pH value of described pH adjusting agent is 11-12.
5. a kind of high purity silicon substrate polishing fluid according to claim 1, is characterized in that, described sequestrant is the one in glycine, nitrilotriacetic acid trisodium salt, EDTA.
6. a kind of high purity silicon substrate polishing fluid according to claim 1, is characterized in that, described dispersion agent is the one in AMP-95, tripoly phosphate sodium STPP, trisodium phosphate, methyl amyl alcohol, polyacrylamide.
7. a kind of high purity silicon substrate polishing fluid according to claim 1, is characterized in that, described promoting agent is nonionogenic tenside polyoxyethylene nonylphenol ether TX-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210508326.6A CN103849319A (en) | 2012-12-03 | 2012-12-03 | High-purity silicon substrate polishing solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210508326.6A CN103849319A (en) | 2012-12-03 | 2012-12-03 | High-purity silicon substrate polishing solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103849319A true CN103849319A (en) | 2014-06-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210508326.6A Pending CN103849319A (en) | 2012-12-03 | 2012-12-03 | High-purity silicon substrate polishing solution |
Country Status (1)
| Country | Link |
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| CN (1) | CN103849319A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105038606A (en) * | 2015-06-16 | 2015-11-11 | 盐城工学院 | Special polishing solution for gallium oxide substrate polishing and preparation method thereof |
| CN111015369A (en) * | 2019-10-24 | 2020-04-17 | 通威太阳能(眉山)有限公司 | Polishing solution additive for back surface of silicon wafer, polishing solution and polishing method for silicon wafer of back-passivated crystalline silicon solar cell |
-
2012
- 2012-12-03 CN CN201210508326.6A patent/CN103849319A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105038606A (en) * | 2015-06-16 | 2015-11-11 | 盐城工学院 | Special polishing solution for gallium oxide substrate polishing and preparation method thereof |
| CN111015369A (en) * | 2019-10-24 | 2020-04-17 | 通威太阳能(眉山)有限公司 | Polishing solution additive for back surface of silicon wafer, polishing solution and polishing method for silicon wafer of back-passivated crystalline silicon solar cell |
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| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140611 |