CN103843149B - 包括有涂覆步骤的制造结构的方法和对应的结构及装置 - Google Patents

包括有涂覆步骤的制造结构的方法和对应的结构及装置 Download PDF

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CN103843149B
CN103843149B CN201180071841.6A CN201180071841A CN103843149B CN 103843149 B CN103843149 B CN 103843149B CN 201180071841 A CN201180071841 A CN 201180071841A CN 103843149 B CN103843149 B CN 103843149B
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conductive layer
face
substrate
semiconductor material
active semiconductor
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CN103843149A (zh
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亚历山大·约翰·托平
彼得·德里斯戴尔·莱恩
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Energy rotation (Sang Delan) Co.,Ltd.
Energy rotation Co.,Ltd.
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MFN TECHNOLOGY Ltd
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Abstract

一种产生包括衬底（11）的结构的方法，所述衬底（11）具有：在与源自所述衬底的法线成第一角度处的至少一个完整的第一面，在与源自所述衬底的法线成第二角度处的至少一个第二完整的第二面；且在所述第一面和所述第二面之间的结构中具有腔体；所述方法包括以下步骤：使用第一导电层涂敷所述第一面的部分（15）；使用第二导电层涂敷所述第二面的部分（18）；以及，在所述腔体中沉积活性材料（31），以经由所述第一导电层和所述第二导电层，为来自所述活性材料的电荷的插入或提取提供欧姆接触和整流接触。

Description

包括有涂覆步骤的制造结构的方法和对应的结构及装置
技术领域
本发明涉及一种涂敷的方法，及由该方法所产生的产物。
背景技术
在包括有透明导体、活性材料和后导体（rear conductor）的典型平面夹层构造的装置（如太阳能光伏电池和有机发光器件（“OLED”）等）的制作中，大家都知道结构中的任何缺陷均会严重影响该装置的整体性能。这导致制作程序需要被限制在干净且非常干净的区域并被限制在如下的涂敷过程，根据涂敷均匀性和涂敷过程对通常是薄膜太阳能装置中传统的生长型平面夹层构造中的其它层的作用，对这些涂敷过程本身有很严格地规定。这降低了制程良率和生产能力，因为所沉积的材料必须非常均匀，这就要求非常严格地控制加工过程。
已经发现期望使用辊对辊（roll to roll）系统来制作电子装置，因为加工速度可以很高，从而可以使成本最小化。但是，因为涉及了必需高速的沉积工艺，产生的装置可能容易出现偶尔的材料缺陷，如针孔和材料喷溅（spit）。显然如果能够开发出不易出现这种材料缺陷的系统，则可以实现之前达不到的制作生产能力和成本降低。
传统上，薄膜光学装置已经使用了一般是基于氧化锌或氧化铟的透明电导体。这些导体通常要求较高温度沉积以实现商品化产物所需的性能。这种要求可以占到装置制作全部成本的大约30%。这不可避免地将所使用的衬底的类型限制在能承受住沉积透明导体所需的温度这样的衬底的类型上，且透明导体的成本限制了使用该透明导体的任何装置的成本。
发明内容
根据本发明的第一方面，提供了一种产生包括有衬底的结构的方法，所述衬底具有：在与源自所述衬底的法线成第一角度处的至少一个完整的第一面，在与源自所述衬底的法线成第二角度处的至少一个第二完整的第二面；且在所述第一面和所述第二面之间的所述结构中具有腔体，所述方法的特征在于以下步骤：使用第一导电层涂敷所述第一面；使用第二导电层涂敷要被涂敷的所述第二面；以及，在所述腔体中沉积光伏活性材料，以经由所述第一导电层和所述第二导电层，为来自所述光伏活性材料的电荷的插入或提取提供欧姆接触和整流接触。
根据本发明的第一方面的第一优选方式，所述被涂敷的导电层中的至少一个由以下物质中的一种或多种组成，或包括以下物质中的一种或多种：铝、铋、镉、铬、铜、镓、金、铟、铅、镁、锰、钐、钪、硒、银、锡和锌。
根据本发明的第一方面的第二优选方式或其第一优选方式，所述光伏活性材料选自以下物质中的一种或多种：碲化镉、铜铟镓硒（“CIGS”）、氧化铜、硅、非晶硅、加氢的非晶硅、锗或其它半导体。
根据本发明的第一方面的第三优选方式或其第一或第二优选方式，所述方法包括以下步骤：提供所述第一导电层或每一第一导电层的末端分别连接在所述第二导电层或每一第二导电层的末端，且不会彼此短路。
根据本发明的第一方面的第四优选方式或其先前的任一优选方式，沉积光伏材料的步骤包括利用含纳米颗粒的光伏材料，以为利用所述纳米颗粒作为所述活性材料为电荷的插入提供结（junction）和欧姆接触。
根据本发明的第一方面的第五优选方式或其先前的任一优选方式，包括一进一步的方法步骤：在所述完整的面上提供漆层（a layer of lacquer），随后在所述层上浮凸出所述第一导电层和所述第二导电层。
根据本发明的第一方面的第六优选方式或其先前的任一优选方式，包括一进一步的方法步骤：在沉积的所述导电层和沉积的所述光伏活性材料上提供叠压的保护层。
根据本发明的第二方面，提供了一种太阳能电池、有机发光装置或蓄电池，所述太阳能电池、有机发光装置或蓄电池并入了具有衬底的结构，所述衬底具有：在与源自所述衬底的法线成第一角度处的至少一个完整的第一面，在与源自所述衬底的法线成第二角度处的至少一个第二完整的第二面；且在所述第一面和所述第二面之间的所述结构中具有腔体；所述第一面被涂敷有第一导电层；所述第二面被涂敷有第二导电层；以及，沉积在所述腔体中的光伏活性材料，以经由所述第一导电层和所述第二导电层，为来自所述光伏活性材料的电荷的插入或提取提供欧姆接触和整流接触。
已经示出通过使用带纹路衬底（structured substrate）和离轴的定向真空涂敷，可以制作非接触的交叉指型导体，该非接触的交叉指型导体具有呈现给涂覆源的沿着表面的良好限定的几何形状。
然后这些制作的导体可以用于去往活性材料的输入连接和输出连接，该活性材料位于沉积在带纹路衬底上的导体之间的空间内。该活性材料可以是真空可涂敷材料或者是一种可以通过一些现存的涂敷方案施加的活性材料。
通过使用带纹路衬底表面且从相对于该表面的角度涂敷它，可以被从垂直位置的任意侧沉积导体，只要正在被涂覆导体的表面以及多个来源的相对位置满足特定的几何学考虑。这些考虑是涂敷基本被朝着表面结构的仅一侧或小平面的视角所限制。因此，这些涂敷的可接受的限度被结构的类型所限定，其中涂层被沉积在该结构上。在结构的上表面上的这样的涂敷可以是持续的或不持续的，这取决于表面的精细结构或所述表面上所产生的结构的类型。
除了其它结构，本发明提供了一种用选择性涂敷技术产生带纹路表面（structured surface）的方法，以便产生5至100nm厚的交替的非连接导体，这样导体之间的空间可以被填满光伏活性材料。典型地，导体可以具有或包括铝、铬、铜、镓、金、铟、铅、镁、钪、硒、银和锌。活性材料用于为来自该材料的电荷的插入或提取提供所需的欧姆接触和整流接触，该材料被涂敷在相对导体之间的腔体内。
附图说明
图1至图3是在制作成结构的各阶段中具有完整正弦上表面和平面下表面的衬底的示意图；以及
图4和图5是并入了图1至图3的衬底的结构的截面图。
具体实施方式
图1至图3分别示出了具有正弦上表面12和平面下表面13的衬底11的一部分。上表面12包括三个完整且平行的圆锥形突出部12A、12B和12C。
第一真空蒸汽源14被放置的位置应使：仅突出部12B的部分15被涂敷有来自该源14的蒸汽，从而在这种情况下在部分15上留下清楚界定的沿突出部12B的长度的下边界L。在该操作中，突出部12B的下部16没有被涂敷来自源14的材料。
图2示出突出部12C的部分18被第二蒸汽源17所涂敷，该部分18与部分15相对。涂敷过程与在图1相关的描述中所使用的过程类似。在这种情况下，仅突出部12C的部分18被涂敷来自该源17的蒸汽，从而在这种情况下在部分19上留下清楚界定的沿突出部12B的长度的下边界L’。在该操作中，突出部12C的下部20没有被涂敷来自源17的材料。
图3是突出部12B的衬底11上的截面，该截面示出一微小的槽口（notch）51，提供该槽口51以确保在导体部分15和对应的导体部分P之间没有接触。
图4是被涂敷过的衬底11的剖视图，示出两个导体部分15和18的位置以及半导体层31位置，该半导体层31是在部分15、18沉积之后的另一步骤中被插入的。
图5示出进一步的实施方式，其中，半导体层32具有圆形截面，且没有到达凹槽33的底部，该凹槽33是由未被涂敷的下部16、20界定的。
半导体层31、32包括存在于该结构内且与每个所沉积的的导体15、18相接触的纳米颗粒。
在可选实施方式中，可以将对应于部分15、18的导体部分连接起来，以便形成装置的级联结构，从而允许产生更高的电压或用于OLED实施方式的太阳能电池实施方式中。
太阳能电池规则结构被浮凸（emboss）在商业上实现的特征尺寸小于0.5微米且深度达到1微米的表面内，或被浮凸在上述表面上。这样的结构所具有的尺寸相当于在更常见的平面薄膜光伏电池配置中所使用的半导体材料的厚度。因此可以使用两种不同的材料来源来分别涂敷浮凸结构的相对侧，以便材料自身不接触，且然后使用适当的光敏材料来涂敷整个浮凸结构，从而创造出光伏装置。可以涂敷另一选择性涂层以使交叉指型金属（inter-digitated metal）接触点的最边缘联接起来，从而允许当装置被照亮时从每个工作夹层中提取电荷。可选择地，涂层可以仅在结构的底部是不连续的，从而允许一些装置（在两个不同导体之间的空间内创建的）自动地串联连接起来，以允许形成较大的电压，从而针对任意给定的功率输出而减少产生的电流。该结构允许在沉积和安装过程中均使用较低的电导连接，从而降低了材料要求和制作成本。
材料可以是溶胶凝胶材料的任何真空可涂敷材料或是具有纳米颗粒尺寸的纳米颗粒，选择该纳米颗粒尺寸以便单个纳米颗粒能够触碰不同导体，且所述导体具有合适（correct）的材料以允许存在合适的材料界面性质，从而使该结构能够作为太阳能电池工作。
这样的结构还去除了与外部电路有关的问题，因为涂敷的边缘当被处理或被连接时不允许装置因标准薄膜太阳能电池几何形状的顶部至底部电极特性的接触而发生短路。
正因为传统夹层结构的去除，使可以用以涂敷半导体层的涂层的类型最大化，从而允许使用湿化学（wet chemical）或真空技术来实现半导体层，该半导体层应理想地填满沉积在结构表面上的相对金属导体之间的空间。这种能力使得高速低成本的制造成为可能，因为涂层均匀性不是关键性的且涂层缺陷区域的针孔不会显著损害总体装置性能。
有机发光器件结构再次被选择性涂敷，且无论使用何种适用的过程均将活性材料完全涂敷，以便活性材料沉积在相对导体之间的空间中。然后，虽然活性材料发光，但电荷可以在这些导体之间通过。
蓄电池（battery）正如太阳能电池和OLED实施方式，导体沉积有适当的储存层，且该储存层被选择性涂敷至结构的相对侧。于是，蓄电池活性材料应是离子导电层，该离子导电层很可能是（但并不限于）在空气处理过程（air process）中沉积的有机层，该空气处理过程应允许通过在分离的被涂敷的表面和外部附加电路之间形成离子回路来提取储存的电荷。
工业实用性
本发明的方法提供了一种用于制造结构和装置的改善的手段，其中，特别是与在此以前的（除了其它装置）太阳电池板、有机发光器件和蓄电池相比，更容易提供清楚限定的边界。

Claims (11)

1.一种产生包括有衬底的结构的方法，所述衬底具有：在与源自所述衬底的法线成第一角度处的至少一个完整的第一面，在与源自所述衬底的法线成第二角度处的至少一个第二完整的第二面，以及在所述第一面和所述第二面之间的所述结构中的腔体，所述方法的特征在于以下步骤：
使用第一导电层涂敷要被涂敷的所述第一面；以及
使用第二导电层涂敷要被涂敷的所述第二面；
所述方法进一步包括以下步骤：在所述腔体中沉积光伏活性半导体材料，以经由所述第一导电层和所述第二导电层，为来自所述光伏活性半导体材料的电荷的插入或提取提供欧姆接触和整流接触；
其中，所述第一导电层和所述第二导电层包含不同的材料；且
其中，所述光伏活性半导体材料填满所述第一导电层和所述第二导电层之间的空间。
2.根据权利要求1所述的方法，其中，使用第一真空蒸汽源使所述第一面被所述第一导电层涂敷。
3.根据权利要求2所述的方法，其中，所述第一导电层具有清楚限定的下边界。
4.根据前述权利要求中任一项所述的方法，其中，使用第二真空蒸汽源使所述第二面被所述第二导电层涂敷。
5.根据权利要求4所述的方法，其中，所述第二导电层具有清楚限定的下边界。
6.根据权利要求1至3中任一项所述的方法，其中，所述衬底具有正弦上表面和平面下表面。
7.根据权利要求1至3中任一项所述的方法，其中，所述第一导电层和所述第二导电层中的至少一个由以下物质中的一种或多种组成，或包括以下物质中的一种或多种：铝、铋、镉、铬、铜、镓、金、铟、铅、镁、锰、钐、钪、硒、银、锡和锌。
8.根据权利要求1至3中任一项所述的方法，其中，所述光伏活性半导体材料选自以下物质中的一种或多种：碲化镉、铜铟镓硒、氧化铜、硅、非晶硅、氢化非晶硅、锗或其它半导体。
9.根据权利要求1至3中任一项所述的方法，包括一进一步的方法步骤：在所述完整的面上提供漆层，然后在所述完整的面上浮凸出所述第一导电层和所述第二导电层。
10.根据权利要求1至3中任一项所述的方法，包括一进一步的方法步骤：在所述第一导电层和所述第二导电层和所述光伏活性半导体材料上提供叠压的保护层。
11.一种太阳能电池，所述太阳能电池并入了具有衬底的结构，所述衬底具有：在与源自所述衬底的法线成第一角度处的至少一个完整的第一面，在与源自所述衬底的法线成第二角度处的至少一个第二完整的第二面，以及在所述第一面和所述第二面之间的所述结构中的腔体，所述第一面被涂敷有第一导电层，所述第二面被涂敷有第二导电层，以及，沉积在所述腔体中的光伏活性半导体材料，以经由所述第一导电层和所述第二导电层，为来自所述光伏活性半导体材料的电荷的插入或提取提供欧姆接触和整流接触，其中，所述光伏活性半导体材料填满所述第一导电层和所述第二导电层之间的空间，且所述第一导电层和所述第二导电层包含不同的材料。
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