CN103837823A - Product testing circuit - Google Patents
Product testing circuit Download PDFInfo
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- CN103837823A CN103837823A CN201410098499.4A CN201410098499A CN103837823A CN 103837823 A CN103837823 A CN 103837823A CN 201410098499 A CN201410098499 A CN 201410098499A CN 103837823 A CN103837823 A CN 103837823A
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- test circuit
- circuit
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Abstract
The invention provides a product testing circuit which comprises a pulse circuit, a testing circuit and a phase commutation unit. The circuit is simple in structure and small in occupied space, a plurality of product testing circuits can be fixed on a needle card, multi-crystal testing on a semiconductor chip is achieved, production cost can be well lowered, if the product testing circuit is in fault, problem analyzing can be carried out easily, and working efficiency is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of product test circuit.
Background technology
Semi-conductor chip, after production completes, need to carry out a series of performance test to semi-conductor chip conventionally, for example wafer reliability testing (Wafer Acceptance Test, WAT) etc.In order to detect a certain performance parameter of described semi-conductor chip, conventionally need to be at the upper fixing corresponding electric elements of pin card (Prober Card), composition test circuit is tested accordingly to described semi-conductor chip.
But traditional test circuit is very complicated, there are a lot of circuit components, if while going wrong, debug process will be very complicated and difficult; In addition, also footprint area very of traditional test circuit, because the area of pin card is very limited, therefore on a pin card, cannot fix multiple test circuits, cannot realize semi-conductor chip is carried out to polycrystalline (Die) test, if desired carry out polycrystalline test, need to use a large amount of pin cards, be unfavorable for reducing production costs.
Therefore, those skilled in the art's technical matters of above-mentioned existence as early as possible.
Summary of the invention
The object of the present invention is to provide a kind of product test circuit, have simple in structure, the advantage such as area occupied is little.
To achieve these goals, the present invention proposes a kind of product test circuit, for semi-conductor chip is carried out to performance test, described circuit comprises:
Pulsing circuit, for providing pulse signal;
Test circuit, carries out performance test according to described pulse signal to described semi-conductor chip;
Commutation unit, for carrying out commutation processing to the electric current of described test circuit.
Further, described pulsing circuit comprises pulse producer and metal-oxide-semiconductor, and described pulse producer one end is connected with the grid of described metal-oxide-semiconductor, the grounded drain of described metal-oxide-semiconductor, and the source electrode of described metal-oxide-semiconductor connects a test lead SR1.
Further, described test circuit comprises a power supply and electric capacity, described power supply and Capacitance parallel connection, and the equal ground connection of the negative pole of described power supply and electric capacity, and the positive pole of described power supply and electric capacity is connected another test lead SR2.
Further, described commutation unit is located in described test circuit, is connected between described power supply and metal-oxide-semiconductor or electric capacity and metal-oxide-semiconductor.
Further, described commutation unit is single-pole double-throw (SPDT) MOS switch.
Further, described semi-conductor chip is connected between described test lead SR1 and test lead SR2.
Further, described product test circuit is for detecting the electric current of semi-conductor chip.
Compared with prior art, beneficial effect of the present invention is mainly reflected in: product test circuit comprises pulsing circuit, test circuit and commutation unit, its circuit structure is simple, area occupied is less, can fix multiple product test circuit on pin card, realizes the polycrystalline test to semi-conductor chip, be conducive to reduce production costs, if when product test circuit goes wrong, also very easily carry out case study, increase work efficiency.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of product test circuit in one embodiment of the invention.
Embodiment
Below in conjunction with schematic diagram, product test circuit of the present invention is described in more detail, has wherein represented the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details to realize developer's specific objective, for example, according to about system or about the restriction of business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, with way of example, the present invention is more specifically described with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 1, in the present embodiment, proposed a kind of product test circuit, for semi-conductor chip is carried out to performance test, described circuit comprises:
Pulsing circuit, for providing pulse signal;
In the present embodiment, described pulsing circuit comprises pulse producer PG and metal-oxide-semiconductor M, and described pulse producer PG one end is connected with the grid of described metal-oxide-semiconductor M, the grounded drain of described metal-oxide-semiconductor M, and the source electrode of described metal-oxide-semiconductor M connects test lead SR1+ or a SR1-; Described pulse producer PG can send the pulse signal with predetermined pulse width, time according to real needs, and pulse signal can make described metal-oxide-semiconductor M carry out conducting according to pulse width and the time etc. of pulse signal.
Test circuit, carries out performance test according to described pulse signal to described semi-conductor chip;
Described test circuit comprises power supply V and a capacitor C, described power supply V and capacitor C parallel connection, and the equal ground connection of negative pole of described power supply V and capacitor C, and the positive pole of described power supply V and capacitor C is connected another test lead SR2+ or SR2-; Before metal-oxide-semiconductor M conducting, described power supply V can charge to described capacitor C, can increase momentary current like this in described metal-oxide-semiconductor M conducting, prevents metal-oxide-semiconductor M ON time too short (being even only several microseconds), and electric current cannot reach pre-provisioning request.
Commutation unit, for carrying out commutation processing to the electric current of described test circuit.
Described semi-conductor chip (scheming not shown) is connected between described test lead SR1 and test lead SR2; Described commutation unit J1 and commutation unit J2 are located in test circuit, be connected between described power supply V, capacitor C and metal-oxide-semiconductor M, during due to test, the electric current of test circuit need to carry out commutation, the calibrating terminal SR1 and the positive and negative of SR2 that are connected to described semi-conductor chip two ends change, therefore need to adopt single-pole double-throw (SPDT) MOS switch, as commutation unit, electric current is carried out to commutation processing, meanwhile, adopt MOS switch can not exert an influence to the electric current of test circuit.
Described product test circuit is for detecting the electric current of semi-conductor chip, when concrete detection, provide cyclic pulse signal periodically to make described metal-oxide-semiconductor M conducting by described pulse producer PG, thereby detect through the size of the current value of described semi-conductor chip and have the data such as time of electric current, and then accomplishing semi-conductor chip to carry out Performance Detection.
If semi-conductor chip is carried out to polycrystalline test, multiple being fixed on same pin card of product test circuit that only the present embodiment need to be proposed.
Wherein, the pulse signal that voltage V, capacitor C and pulse producer PG provide etc. all can be selected according to concrete test request, in this no limit.
To sum up, in the product test circuit providing in the embodiment of the present invention, product test circuit comprises pulsing circuit, test circuit and commutation unit, and its circuit structure is simple, and area occupied is less, can fix multiple product test circuit on pin card, realize the polycrystalline test to semi-conductor chip, be conducive to reduce production costs, if when product test circuit goes wrong, also very easily carry out case study, increase work efficiency.
Above are only the preferred embodiments of the present invention, the present invention is not played to any restriction.Any person of ordinary skill in the field; not departing from the scope of technical scheme of the present invention; the technical scheme that the present invention is disclosed and technology contents make any type of variations such as replacement or modification that are equal to; all belong to the content that does not depart from technical scheme of the present invention, within still belonging to protection scope of the present invention.
Claims (7)
1. a product test circuit, for semi-conductor chip is carried out to performance test, described circuit comprises:
Pulsing circuit, for providing pulse signal;
Test circuit, carries out performance test according to described pulse signal to described semi-conductor chip;
Commutation unit, for carrying out commutation processing to the electric current of described test circuit.
2. product test circuit as claimed in claim 1, it is characterized in that, described pulsing circuit comprises pulse producer and metal-oxide-semiconductor, and described pulse producer one end is connected with the grid of described metal-oxide-semiconductor, the grounded drain of described metal-oxide-semiconductor, the source electrode of described metal-oxide-semiconductor connects a test lead SR1.
3. product test circuit as claimed in claim 2, is characterized in that, described test circuit comprises a power supply and electric capacity, described power supply and Capacitance parallel connection, and the equal ground connection of the negative pole of described power supply and electric capacity, and the positive pole of described power supply and electric capacity is connected another test lead SR2.
4. product test circuit as claimed in claim 3, is characterized in that, described commutation unit is located in described test circuit, is connected between described power supply and metal-oxide-semiconductor or electric capacity and metal-oxide-semiconductor.
5. product test circuit as claimed in claim 4, is characterized in that, described commutation unit is single-pole double-throw (SPDT) MOS switch.
6. product test circuit as claimed in claim 3, is characterized in that, described semi-conductor chip is connected between described test lead SR1 and test lead SR2.
7. product test circuit as claimed in claim 1, is characterized in that, described product test circuit is for detecting the electric current of semi-conductor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410098499.4A CN103837823A (en) | 2014-03-17 | 2014-03-17 | Product testing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410098499.4A CN103837823A (en) | 2014-03-17 | 2014-03-17 | Product testing circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103837823A true CN103837823A (en) | 2014-06-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410098499.4A Pending CN103837823A (en) | 2014-03-17 | 2014-03-17 | Product testing circuit |
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| CN203101550U (en) * | 2013-01-29 | 2013-07-31 | 上海电气集团股份有限公司 | Test circuit for two-level converter switching performance based on dipulse |
| CN103367327A (en) * | 2012-04-04 | 2013-10-23 | 爱思开海力士有限公司 | Test circuit and semiconductor apparatus including the same |
| CN103675372A (en) * | 2013-12-16 | 2014-03-26 | 上海华岭集成电路技术股份有限公司 | Random-order electrical level generator |
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2014
- 2014-03-17 CN CN201410098499.4A patent/CN103837823A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0504944A2 (en) * | 1991-03-22 | 1992-09-23 | Nec Corporation | Dynamic fault imaging system using electron beam and method of analyzing fault |
| US20020009006A1 (en) * | 2000-07-19 | 2002-01-24 | Yoshikazu Saitoh | Semiconductor wafer, semiconductor chip, and manufacturing method of semiconductor device |
| CN101216528A (en) * | 2008-01-15 | 2008-07-09 | 中国科学院上海微系统与信息技术研究所 | On-chip test method for microwave power amplifier chip and its test system |
| CN101344572A (en) * | 2008-09-04 | 2009-01-14 | 铁道部运输局 | Chopped wave test circuit and method for semiconductor power device |
| CN101685135A (en) * | 2008-09-28 | 2010-03-31 | 四川虹欧显示器件有限公司 | Test device and test method for testing circuit board |
| JP2010127820A (en) * | 2008-11-28 | 2010-06-10 | Yokogawa Electric Corp | Direct-current testing device and semiconductor testing apparatus |
| CN102590736A (en) * | 2011-01-05 | 2012-07-18 | 上海华虹Nec电子有限公司 | Rapid test system and rapid test method for stacked chips |
| CN102608508A (en) * | 2011-12-20 | 2012-07-25 | 西交利物浦大学 | Automatic real-time pulse measuring device and method for threshold voltage parameter of field-effect transistor |
| CN103367327A (en) * | 2012-04-04 | 2013-10-23 | 爱思开海力士有限公司 | Test circuit and semiconductor apparatus including the same |
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| CN103675372A (en) * | 2013-12-16 | 2014-03-26 | 上海华岭集成电路技术股份有限公司 | Random-order electrical level generator |
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Application publication date: 20140604 |