CN103091526B - Voltage detection circuit - Google Patents
Voltage detection circuit Download PDFInfo
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- CN103091526B CN103091526B CN201110344170.8A CN201110344170A CN103091526B CN 103091526 B CN103091526 B CN 103091526B CN 201110344170 A CN201110344170 A CN 201110344170A CN 103091526 B CN103091526 B CN 103091526B
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Abstract
The invention discloses a voltage detection circuit which can be used for detecting a lower first voltage power source and a higher second voltage power source. The same resistance detection circuit is used by both the higher voltage power source and the lower voltage power source, and a first voltage detection end which is separated from the resistance detection circuit is connected with a voltage protection circuit and then connected to a follow-up first comparator. The voltage protection circuit comprises a first N-channel metal oxide semiconductor (NMOS) tube with a high voltage and a transistor tandem cascading structure which is formed by connecting a plurality of diode-connected metal oxide semiconductor (MOS) tubes in series. When a high-pressure alarm is carried out, the voltage protection circuit enables the high voltage of the first voltage detection end to be released, the voltage which is input to the first comparator is enabled to be clamped in a low voltage and the first comparator is enabled to be produced by low-pressure devices, thus the speed of a low-pressure alarm is improved and the area of circuits is reduced. The voltage detection circuit is capable of greatly reducing the area of the circuits further by sharing the resistance detection circuit.
Description
Technical field
The present invention relates to a kind of SIC (semiconductor integrated circuit), particularly relate to a kind of voltage detecting circuit (VD).
Background technology
In voltage detecting circuit, be save area, low-voltage alarm circuit and alarm for high voltage circuit often share a resistance string, as shown in Figure 1, are the structural representation of the resistance detecting circuit in existing voltage detecting circuit and resistance string.Resistance detecting circuit in Fig. 1 is serially connected with by resistance R1, R2, R3, R4, R5 and R6 and detects between voltage source V0 and ground.Resistance R1, R2, R3, R4, R5 and R6 carry out dividing potential drop to described detection voltage source V0, the dividing potential drop of each resistance joint can be taken out respectively, as dividing potential drop V1 and dividing potential drop V2 can be taken out in Fig. 1, dividing potential drop V1 and dividing potential drop V2 is linked into respectively follow-up comparator circuit and just can realizes the detection to described detection voltage source V0.
In available circuit, the device of two kinds of operating voltage can be included in same circuit simultaneously, be respectively high tension apparatus and low-voltage device.With card class applicating example, usually use low pressure 1.8V device, the technique of high pressure 5V device.Need to detect high pressure 6V voltage, low pressure 1.5V voltage in voltage detecting, during detection, voltage detecting circuit all reporting to the police higher than during 6V and lower than during 1.5V, and can not be reported to the police between 6V and 1.5V.Whether as shown in Figure 1, suppose that described resistance R1 to R6 is identical, then when described detection voltage source V0 is 6V, described dividing potential drop V2 is 1V, now described dividing potential drop V2 can be linked in follow-up comparer to detect high pressure and go beyond the scope; Whether, when described detection voltage source V0 is 1.5V, described dividing potential drop V1 is 1V, now described dividing potential drop V1 can be linked in follow-up comparer to detect low pressure and go beyond the scope.If at same voltage detecting circuit, respectively a resistance detecting circuit is all adopted to high pressure and low pressure, then can not interact between high pressure and low pressure detection, but greatly can increase the area that circuit takies on chip like this, thus cost can be made to improve.
In order to reduce the area of circuit, a kind of existing method shares a resistance detecting circuit by the detection of high pressure and low pressure, but this shared method has a shortcoming to be: as shown in Figure 1, in order to realize the detection to low pressure, dividing potential drop V1 must be connected in the follow-up comparer for detecting low pressure; In order to realize the detection to high pressure, the dividing potential drop V2 of same resistance string must be connected in the follow-up comparer for detecting high pressure simultaneously.When described detection voltage source V0 be low pressure as 1.5V time, dividing potential drop V1 is 1V, dividing potential drop V2 is 0.25V, and these two magnitudes of voltage normally work without any impact on follow-up comparer.When described detection voltage source V0 be high pressure as 6V time, dividing potential drop V1 is 4V, dividing potential drop V2 is 1V, although the follow-up comparer for detecting high pressure can normally work, but because dividing potential drop V1 is 4V, the operating voltage of the follow-up comparer for detecting low pressure could normally work when must be greater than 4V, namely the comparer for detecting low pressure must select high pressure as 5V element manufacturing, and 5V device directly causes comparer speed slow, and area is large.The occasion of reporting to the police needing quick low voltage can only use two to go here and there independently resistance string, but has rolled up again area like this.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of voltage detecting circuit, can reduce the area occupied of circuit on chip, and can improve the speed of low pressure alarming when not increasing power consumption.
For solving the problems of the technologies described above, the invention provides a kind of voltage detecting circuit, comprise a resistance detecting circuit, described resistance detecting circuit is made up of the resistance of multiple series connection and is connected between detection voltage source and ground, described detection voltage source is the first voltage source or the second voltage source, and the first voltage is less than the second voltage; The resistance in series of described resistance detecting circuit is carried out dividing potential drop to described detection voltage source and is taken out two dividing potential drops respectively as the first voltage detecting end and the second voltage detecting end; Described first voltage detecting end is connected to a voltage protection circuit; Described voltage protection circuit comprises:
One operating voltage is greater than the first NMOS tube of described second voltage, and the drain electrode of described first NMOS tube is connected with described first voltage detecting end, and the grid of described first NMOS tube is connected with one first voltage source; The source electrode of described first NMOS tube is connected to an input end of the first comparer; Another input termination reference voltage of described first comparer, the output terminal of described first comparer exports the first voltage alarm, and the working power of described first comparer connects described first voltage source.
One transistor series connection structure, described transistor series connection anatomical connectivity is between the source electrode and ground of described first NMOS tube; Described transistor series connection structure is by the structure that is together in series of the second PMOS of multiple grid and drain electrode short circuit and the threshold voltage sum that the number of described second PMOS meets each described second PMOS is greater than the difference of the threshold voltage of described first voltage source and described first NMOS tube; Or described transistor series connection structure is by the structure that is together in series of the 3rd NMOS tube of multiple grid and drain electrode short circuit and the threshold voltage sum that the number of described 3rd NMOS tube meets each described 3rd NMOS tube is greater than the difference of the threshold voltage of described first voltage source and described first NMOS tube.
Described second voltage detecting end is connected to an input end of the second comparer; Reference voltage described in another input termination of described second comparer, the output terminal of described second comparer exports the second voltage alarm; The working power of described second comparer connects described first voltage source.
The present invention has following beneficial effect:
1, the present invention is by arranging a voltage protection circuit, can realize sharing same resistance detecting circuit when detecting two different voltage sources, thus greatly can reduce circuit area.
2, the present invention is by arranging a voltage protection circuit; can realize when detection voltage source is the second higher voltage; the higher partial pressure of the first voltage detecting end is released; thus enable the first comparer of the first lower voltage adopt low-voltage device to make, thus low pressure alarming speed can be provided and further reduce circuit area.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation:
Fig. 1 is the structural representation of the resistance detecting circuit in existing voltage detecting circuit;
Fig. 2 is the structural representation of embodiment of the present invention voltage detecting circuit.
Embodiment
As shown in Figure 2, be the structural representation of embodiment of the present invention voltage detecting circuit.Embodiment of the present invention voltage detecting circuit comprises:
One resistance detecting circuit, described resistance detecting circuit is made up of the resistance of multiple series connection and is connected between detection voltage source and ground, described detection voltage source is the first voltage source vpwr or the second voltage source vpwr5, first voltage is less than the second voltage, namely the first voltage is low pressure, second voltage is high pressure, and low pressure such as 1.8V is supplied to low-voltage device, and high pressure such as 5V is supplied to high tension apparatus.The resistance in series of described resistance detecting circuit is carried out dividing potential drop to described detection voltage source and is taken out two dividing potential drops respectively as the first voltage detecting end netl and the second voltage detecting end neth; The resistance 11,12,13,14,15 and 16 that the resistance value of 6 series connection is identical is illustrated altogether in Fig. 2, in side circuit, the quantity of resistance and resistance value can change, but meet and make the dividing potential drop exported from the first voltage detecting end netl can be used in the follow-up detection to the first voltage source vpwr and low-tension supply, make the dividing potential drop exported from the second voltage detecting end neth can be used in the follow-up detection to the second voltage source vpwr5 and high-voltage power supply.In embodiments of the present invention, when described detection voltage source is the first voltage source vpwr and value is 1.5V, the dividing potential drop that described first voltage detecting end netl exports is 1V; When described detection voltage source is the second voltage source vpwr5 and value is 6V, the dividing potential drop that the dividing potential drop that described second voltage detecting end neth exports is 1V, described first voltage detecting end netl exports simultaneously is 4V.
Described first voltage detecting end netl is connected to a voltage protection circuit; Described voltage protection circuit comprises:
One operating voltage is greater than the first NMOS tube 1 of described second voltage, and described first NMOS tube 1 adopts operating voltage to be the Native nmos device of 5V in embodiments of the present invention.The drain electrode of described first NMOS tube 1 is connected with described first voltage detecting end netl, and the grid of described first NMOS tube 1 is connected with one first voltage source vpwr; The source electrode of described first NMOS tube 1 is connected to an input end of the first comparer 5; Another input termination reference voltage Vref of described first comparer 5, the output terminal LVIOUT of described first comparer 5 exports the first voltage alarm, and the working power of described first comparer 5 meets described first voltage source vpwr.In the embodiment of the present invention, reference voltage Vref is set to 1V.
One transistor series connection structure, described transistor series connection anatomical connectivity is between the source electrode and ground of described first NMOS tube 1; Described transistor series connection structure is by the structure that is together in series of the second PMOS 3 of multiple grid and drain electrode short circuit and the threshold voltage sum that the number of described second PMOS 3 meets each described second PMOS 3 is greater than the difference of the threshold voltage of described first voltage source vpwr and described first NMOS tube 1; Or described transistor series connection structure is by the structure that is together in series of the 3rd NMOS tube 4 of multiple grid and drain electrode short circuit and the threshold voltage sum that the number of described 3rd NMOS tube 4 meets each described 3rd NMOS tube 4 is greater than the difference of the threshold voltage of described first voltage source vpwr and described first NMOS tube 1.
Described second voltage detecting end neth is connected to an input end of the second comparer 2; Reference voltage Vref described in another input termination of described second comparer 2, the output terminal HVIOUT of described second comparer 2 exports the second voltage alarm; The working power of described second comparer 2 meets described first voltage source vpwr.
The principle of work of embodiment of the present invention voltage detecting circuit is as follows:
1, when low pressure alarming, as when as described in detection voltage source be the first voltage source vpwr and value is can low pressure alarming during 1.5V, now, the dividing potential drop that described first voltage detecting end netl exports is 1V, described first NMOS tube 1 i.e. 5V NATIVE NMOS tube can this analog voltage of normal transmission 1V, and the threshold value of multiple transistor of described transistor series connection structure and described second PMOS 3 or described 3rd NMOS tube 4 and be greater than reference voltage vref, so described transistor series connection structure can not conducting thus can not cause electric current arrive ground path.Compare so the voltage that finally described first voltage detecting end netl exports can output to described first comparer 5 normally, thus the first voltage alarm and low pressure alarming signal can be obtained.
2, when alarm for high voltage, as when as described in detection voltage source be the second voltage source vpwr5 and value for can alarm for high voltage be produced during 6V, now, the dividing potential drop that the dividing potential drop that described second voltage detecting end neth exports is 1V, described first voltage detecting end netl exports simultaneously is 4V.The voltage that described second voltage detecting end neth exports can output to described second comparer 2 normally and compare, thus can obtain the second voltage alarm and alarm for high voltage signal.
And by the setting of voltage protection circuit, 4V dividing potential drop that described first voltage detecting end netl exports can be avoided the impact of described first comparer 5.Reason is:
The 4V voltage of described first voltage detecting end netl can make the voltage of the input end netl2 of described first comparer 5 raise, thus causes the shutoff of described NATIVE NMOS tube 1.Also high resistant is formed in the path over the ground of described transistor series connection structure composition, namely the 4V voltage of described first voltage detecting end netl passes through the voltage of the input end netl2 of two described first comparers 5 of high resistance sectional pressures generation of NATIVE NMOS tube 1 and described transistor series connection structure, when the voltage of input end netl2 is higher, then the high resistant resistance of NATIVE NMOS tube 1 formation is higher, the resistance of the high resistant that described transistor series connection structure is formed is lower, and finally form balance, thus input end netl2 clamper at below 2V, and only receive in described transistor series connection structure peace level electric leakage.
Above by specific embodiment to invention has been detailed description, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (2)
1. a voltage detecting circuit, comprise a resistance detecting circuit, described resistance detecting circuit is made up of the resistance of multiple series connection and is connected between detection voltage source and ground, described detection voltage source is the first voltage source or the second voltage source, and the first voltage that described first voltage source provides is less than the second voltage that described second voltage source provides; The resistance in series of described resistance detecting circuit is carried out dividing potential drop to described detection voltage source and is taken out two dividing potential drops respectively as the first voltage detecting end and the second voltage detecting end, the dividing potential drop of described first voltage detecting end is greater than the dividing potential drop of described second voltage detecting end, and the dividing potential drop that described first voltage detecting end exports can be used in the detection to described first voltage source, the dividing potential drop that described second voltage detecting end exports can be used in the detection to described second voltage source; It is characterized in that: described first voltage detecting end is connected to a voltage protection circuit; Described voltage protection circuit comprises:
One operating voltage is greater than the first NMOS tube of described second voltage, and the drain electrode of described first NMOS tube is connected with described first voltage detecting end, and the grid of described first NMOS tube is connected with one first voltage source; The source electrode of described first NMOS tube is connected to an input end of the first comparer; Another input termination reference voltage of described first comparer, the output terminal of described first comparer exports the first voltage alarm, and the working power of described first comparer connects described first voltage source;
One transistor series connection structure, described transistor series connection anatomical connectivity is between the source electrode and ground of described first NMOS tube; Described transistor series connection structure is by the structure that is together in series of the second PMOS of multiple grid and drain electrode short circuit and the threshold voltage sum that the number of described second PMOS meets each described second PMOS is greater than the difference of the threshold voltage of described first voltage source and described first NMOS tube; Or described transistor series connection structure is by the structure that is together in series of the 3rd NMOS tube of multiple grid and drain electrode short circuit and the threshold voltage sum that the number of described 3rd NMOS tube meets each described 3rd NMOS tube is greater than the difference of the threshold voltage of described first voltage source and described first NMOS tube.
2. voltage detecting circuit as claimed in claim 1, is characterized in that: described second voltage detecting end is connected to an input end of the second comparer; Reference voltage described in another input termination of described second comparer, the output terminal of described second comparer exports the second voltage alarm; The working power of described second comparer connects described first voltage source.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110344170.8A CN103091526B (en) | 2011-11-04 | 2011-11-04 | Voltage detection circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110344170.8A CN103091526B (en) | 2011-11-04 | 2011-11-04 | Voltage detection circuit |
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| CN103091526A CN103091526A (en) | 2013-05-08 |
| CN103091526B true CN103091526B (en) | 2015-02-04 |
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| CN201110344170.8A Active CN103091526B (en) | 2011-11-04 | 2011-11-04 | Voltage detection circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI630403B (en) * | 2018-01-04 | 2018-07-21 | 智原科技股份有限公司 | Core power detection circuit and associated input/output control system |
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| CN104280590B (en) * | 2013-07-12 | 2016-12-28 | 上海华虹宏力半导体制造有限公司 | It is applied to the voltage detecting circuit of power supply lower electricity soon |
| CN103604975B (en) * | 2013-11-18 | 2016-01-20 | 同济大学 | Anti-interference low-voltage detection circuit |
| CN104897949B (en) * | 2015-05-25 | 2017-10-24 | 上海华虹宏力半导体制造有限公司 | Voltage detecting circuit |
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| CN108008179B (en) * | 2017-11-30 | 2020-03-10 | 无锡中微爱芯电子有限公司 | Low-voltage detection circuit with built-in MCU capable of dynamically switching voltage detection points |
| CN110021992B (en) * | 2018-01-10 | 2022-02-18 | 厦门雅迅网络股份有限公司 | Main/standby power supply switching circuit and method |
| CN109991462A (en) * | 2019-04-08 | 2019-07-09 | 美芯晟科技（北京）有限公司 | Voltage detecting circuit, method and system |
| CN111123797A (en) * | 2019-12-31 | 2020-05-08 | 天地（常州）自动化股份有限公司 | Power management system and method for coal mine monitoring system |
| CN114253338B (en) * | 2021-12-14 | 2022-10-18 | 上海富芮坤微电子有限公司 | Bandgap reference voltage generating circuit |
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| CN103091526A (en) | 2013-05-08 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140107 |
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