CN103091526A - Voltage detection circuit - Google Patents
Voltage detection circuit Download PDFInfo
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- CN103091526A CN103091526A CN2011103441708A CN201110344170A CN103091526A CN 103091526 A CN103091526 A CN 103091526A CN 2011103441708 A CN2011103441708 A CN 2011103441708A CN 201110344170 A CN201110344170 A CN 201110344170A CN 103091526 A CN103091526 A CN 103091526A
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Abstract
The invention discloses a voltage detection circuit which can be used for detecting a lower first voltage power source and a higher second voltage power source. The same resistance detection circuit is used by both the higher voltage power source and the lower voltage power source, and a first voltage detection end which is separated from the resistance detection circuit is connected with a voltage protection circuit and then connected to a follow-up first comparator. The voltage protection circuit comprises a first N-channel metal oxide semiconductor (NMOS) tube with a high voltage and a transistor tandem cascading structure which is formed by connecting a plurality of diode-connected metal oxide semiconductor (MOS) tubes in series. When a high-pressure alarm is carried out, the voltage protection circuit enables the high voltage of the first voltage detection end to be released, the voltage which is input to the first comparator is enabled to be clamped in a low voltage and the first comparator is enabled to be produced by low-pressure devices, thus the speed of a low-pressure alarm is improved and the area of circuits is reduced. The voltage detection circuit is capable of greatly reducing the area of the circuits further by sharing the resistance detection circuit.
Description
Technical field
The present invention relates to a kind of SIC (semiconductor integrated circuit), particularly relate to a kind of voltage detecting circuit (VD).
Background technology
In voltage detecting circuit, for saving area, low-voltage alarm circuit and alarm for high voltage circuit often share a resistance string, as shown in Figure 1, and for the resistance detecting circuit in existing voltage detecting circuit is the structural representation of resistance string.Resistance detecting circuit in Fig. 1 is serially connected with by resistance R 1, R2, R3, R4, R5 and R6 and detects between voltage source V0 and ground.Resistance R 1, R2, R3, R4, R5 and R6 carry out dividing potential drop to described detection voltage source V0, the dividing potential drop of each resistance joint can be taken out respectively, as can take out dividing potential drop V1 and dividing potential drop V2 in Fig. 1, dividing potential drop V1 and dividing potential drop V2 are linked into respectively follow-up comparator circuit just can realize detection to described detection voltage source V0.
In available circuit, can include simultaneously the device of two kinds of operating voltage in same circuit, be respectively high tension apparatus and low-voltage device.With card class applicating example, usually use low pressure 1.8V device, the technique of high pressure 5V device.Need to detect high pressure 6V voltage in voltage detecting, low pressure 1.5V voltage, during detection, voltage detecting circuit all can be reported to the police higher than 6V the time and lower than 1.5V the time, and can not report to the police between 6V and 1.5V.As shown in Figure 1, suppose that described resistance R 1 to R6 is all identical, when described detection voltage source V0 is 6V, described dividing potential drop V2 is 1V, and whether can be linked into described dividing potential drop V2 this moment detects high pressure and go beyond the scope in follow-up comparer; When described detection voltage source V0 was 1.5V, described dividing potential drop V1 was 1V, and whether can be linked into described dividing potential drop V1 this moment detects low pressure and go beyond the scope in follow-up comparer.If at same voltage detecting circuit, high pressure and low pressure are all adopted respectively a resistance detecting circuit, high pressure and low pressure can not interact between detecting, but can greatly increase the area that circuit takies like this on chip, thereby cost is improved.
In order to reduce the area of circuit, a kind of existing method is that the detection to high pressure and low pressure is shared a resistance detecting circuit, but this shared method has a shortcoming to be: as shown in Figure 1, in order to realize the detection to low pressure, dividing potential drop V1 must be connected to follow-up comparer for low pressure is detected; In order to realize the detection to high pressure, the dividing potential drop V2 of same resistance string must be connected to follow-up comparer for high pressure is detected simultaneously.When described detection voltage source V0 was low pressure such as 1.5V, dividing potential drop V1 was that 1V, dividing potential drop V2 are 0.25V, and these two magnitudes of voltage work without any impact on follow-up comparer.When described detection voltage source V0 is high pressure such as 6V, dividing potential drop V1 is that 4V, dividing potential drop V2 are 1V, although follow-up comparer for high pressure is detected can work, but because dividing potential drop V1 is 4V, the operating voltage of follow-up comparer for low pressure is detected could work in the time of must be greater than 4V, namely be used for must selecting high pressure such as 5V element manufacturing to the comparer that low pressure detects, and the 5V device directly causes comparer speed slow, area is large.Need occasion that quick low voltage is reported to the police can only use two to go here and there independently resistance string, but rolling up so again area.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of voltage detecting circuit, can reduce the area occupied of circuit on chip, and can be in the situation that do not increase the speed that power consumption improves low pressure alarming.
For solving the problems of the technologies described above, the invention provides a kind of voltage detecting circuit, comprise a resistance detecting circuit, described resistance detecting circuit is formed and is connected between detection voltage source and ground by the resistance of a plurality of series connection, described detection voltage source is the first voltage source or second voltage power supply, and the first voltage is less than second voltage; The resistance in series of described resistance detecting circuit is carried out dividing potential drop to described detection voltage source and is taken out two dividing potential drops respectively as the first voltage detecting end and second voltage test side; Described the first voltage detecting end is connected to a voltage protection circuit; Described voltage protection circuit comprises:
One operating voltage is greater than a NMOS pipe of described second voltage, and the drain electrode of a described NMOS pipe is connected with described the first voltage detecting end, and the grid of a described NMOS pipe is connected with one first voltage source; The source electrode of a described NMOS pipe is connected to an input end of the first comparer; Another input termination reference voltage of described the first comparer, the output terminal output first voltage alarm signal of described the first comparer, the working power of described the first comparer connects described the first voltage source.
One strings of transistors connecting structure, described strings of transistors connecting structure are connected between the source electrode and ground of a described NMOS pipe; Described strings of transistors connecting structure satisfies each described the 2nd PMOS pipe for the number by the structure that is together in series of the 2nd PMOS pipe of a plurality of grids and drain electrode short circuit and described the 2nd PMOS pipe threshold voltage sum is poor greater than the threshold voltage of described the first voltage source and a described NMOS pipe; Perhaps, poor greater than the threshold voltage of described the first voltage source and a described NMOS pipe of the described strings of transistors connecting structure threshold voltage sum that satisfies each described the 3rd NMOS pipe for the number by the structure that is together in series of the 3rd NMOS pipe of a plurality of grids and drain electrode short circuit and described the 3rd NMOS pipe.
Described second voltage test side is connected to an input end of the second comparer; The described reference voltage of another input termination of described the second comparer, the output terminal output second voltage alerting signal of described the second comparer; The working power of described the second comparer connects described the first voltage source.
The present invention has following beneficial effect:
1, the present invention by a voltage protection circuit is set, shares same resistance detecting circuit, thereby can greatly dwindle circuit area in the time of can realizing two different voltage sources are detected.
2, the present invention is by arranging a voltage protection circuit; can realize when detecting voltage source for higher second voltage; the higher partial pressure of the first voltage detecting end is released; thereby the first comparer that makes the first lower voltage can adopt low-voltage device to make, thereby low pressure alarming speed can be provided and further reduce circuit area.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments:
Fig. 1 is the structural representation of the resistance detecting circuit in existing voltage detecting circuit;
Fig. 2 is the structural representation of embodiment of the present invention voltage detecting circuit.
Embodiment
As shown in Figure 2, be the structural representation of embodiment of the present invention voltage detecting circuit.Embodiment of the present invention voltage detecting circuit comprises:
One resistance detecting circuit, described resistance detecting circuit is formed and is connected between detection voltage source and ground by the resistance of a plurality of series connection, described detection voltage source is the first voltage source vpwr or second voltage power supply vpwr5, the first voltage is less than second voltage, namely the first voltage is low pressure, second voltage is high pressure, and low pressure such as 1.8V are supplied to low-voltage device, and high pressure such as 5V are supplied to high tension apparatus.The resistance in series of described resistance detecting circuit is carried out dividing potential drop to described detection voltage source and is taken out two dividing potential drops respectively as the first voltage detecting end netl and second voltage test side neth; Illustrated altogether the identical resistance 11,12,13,14,15 and 16 of resistance value of 6 series connection in Fig. 2, in side circuit, the quantity of resistance and resistance value can change, but satisfy making that to can be used in follow-up from the dividing potential drop of the first voltage detecting end netl output be the detection of low-tension supply to the first voltage source vpwr, make that to can be used in follow-up from the dividing potential drop of second voltage test side neth output be the detection of high-voltage power supply to second voltage power supply vpwr5.In embodiments of the present invention, when described detection voltage source is the first voltage source vpwr and value during for 1.5V, the dividing potential drop of described the first voltage detecting end netl output is 1V; When described detection voltage source is second voltage power supply vpwr5 and value during for 6V, the dividing potential drop of described second voltage test side neth output is that the dividing potential drop of 1V, simultaneously described the first voltage detecting end netl output is 4V.
Described the first voltage detecting end netl is connected to a voltage protection circuit; Described voltage protection circuit comprises:
One operating voltage is greater than a NMOS pipe 1 of described second voltage, and described NMOS pipe 1 an employing operating voltage is the Native nmos device of 5V in embodiments of the present invention.The drain electrode of a described NMOS pipe 1 is connected with described the first voltage detecting end netl, and the grid of a described NMOS pipe 1 is connected with one first voltage source vpwr; The source electrode of a described NMOS pipe 1 is connected to an input end of the first comparer 5; Another input termination reference voltage Vref of described the first comparer 5, the output terminal LVIOUT output first voltage alarm signal of described the first comparer 5, the working power of described the first comparer 5 meets described the first voltage source vpwr.In the embodiment of the present invention, reference voltage Vref is set to 1V.
One strings of transistors connecting structure, described strings of transistors connecting structure are connected between the source electrode and ground of a described NMOS pipe 1; Described strings of transistors connecting structure satisfies each described the 2nd PMOS pipe 3 for the number by the 2nd PMOS pipe 3 structures that are together in series of a plurality of grids and drain electrode short circuit and described the 2nd PMOS pipe 3 threshold voltage sum is poor greater than the threshold voltage of described the first voltage source vpwr and a described NMOS pipe 1; Perhaps, poor greater than the threshold voltage of described the first voltage source vpwr and a described NMOS pipe 1 of the described strings of transistors connecting structure threshold voltage sum that satisfies each described the 3rd NMOS pipe 4 for the number by the 3rd NMOS pipe 4 structures that are together in series of a plurality of grids and drain electrode short circuit and described the 3rd NMOS pipe 4.
Described second voltage test side neth is connected to an input end of the second comparer 2; The described reference voltage Vref of another input termination of described the second comparer 2, the output terminal HVIOUT output second voltage alerting signal of described the second comparer 2; The working power of described the second comparer 2 meets described the first voltage source vpwr.
The principle of work of embodiment of the present invention voltage detecting circuit is as follows:
1, when low pressure alarming, as when as described in the detection voltage source be that the first voltage source vpwr and value can low pressure alarmings during for 1.5V, at this moment, the dividing potential drop of described the first voltage detecting end netl output is 1V, a described NMOS pipe 1 is that 5V NATIVE NMOS pipe can this aanalogvoltage of normal transmission 1V, and a plurality of transistors of described strings of transistors connecting structure be described the 2nd PMOS pipe 3 or described the 3rd NMOS pipe 4 threshold value and be greater than reference voltage vref, so thereby described strings of transistors connecting structure can conducting can not cause electric current to arrive the path on ground.So the voltage of last described the first voltage detecting end netl output can output to normally described the first comparer 5 and compare, and is the low pressure alarming signal thereby can obtain the first voltage alarm signal.
2, when alarm for high voltage, as when as described in the detection voltage source be that second voltage power supply vpwr5 and value can produce alarm for high voltage during for 6V, at this moment, the dividing potential drop of described second voltage test side neth output is that the dividing potential drop of 1V, simultaneously described the first voltage detecting end netl output is 4V.The voltage of described second voltage test side neth output can output to normally described the second comparer 2 and compare, and is the alarm for high voltage signal thereby can obtain the second voltage alerting signal.
And the setting by voltage protection circuit can avoid the 4V dividing potential drop of described the first voltage detecting end netl output on the impact of described the first comparer 5.Former because:
The 4V voltage of described the first voltage detecting end netl can make the voltage of the input end netl2 of described the first comparer 5 raise, thereby causes the shutoff of described NATIVE NMOS pipe 1.also form high resistant in the path over the ground that described strings of transistors connecting structure forms, the 4V voltage that is described the first voltage detecting end netl produces the voltage of the input end netl2 of described the first comparer 5 by two high resistance sectional pressures of NATIVE NMOS pipe 1 and described strings of transistors connecting structure, when the voltage of input end netl2 higher, the high resistant resistance of NATIVE NMOS pipe 1 formation is higher, the resistance of the high resistant that described strings of transistors connecting structure forms is lower, and finally form balance, thereby input end netl2 clamper below 2V, and only receive the electric leakage of peace level on described strings of transistors connecting structure.
Abovely by specific embodiment, the present invention is had been described in detail, but these are not to be construed as limiting the invention.In the situation that do not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (2)
1. voltage detecting circuit, comprise a resistance detecting circuit, described resistance detecting circuit is formed and is connected between detection voltage source and ground by the resistance of a plurality of series connection, and described detection voltage source is the first voltage source or second voltage power supply, and the first voltage is less than second voltage; The resistance in series of described resistance detecting circuit is carried out dividing potential drop to described detection voltage source and is taken out two dividing potential drops respectively as the first voltage detecting end and second voltage test side; It is characterized in that: described the first voltage detecting end is connected to a voltage protection circuit; Described voltage protection circuit comprises:
One operating voltage is greater than a NMOS pipe of described second voltage, and the drain electrode of a described NMOS pipe is connected with described the first voltage detecting end, and the grid of a described NMOS pipe is connected with one first voltage source; The source electrode of a described NMOS pipe is connected to an input end of the first comparer; Another input termination reference voltage of described the first comparer, the output terminal output first voltage alarm signal of described the first comparer, the working power of described the first comparer connects described the first voltage source;
One strings of transistors connecting structure, described strings of transistors connecting structure are connected between the source electrode and ground of a described NMOS pipe; Described strings of transistors connecting structure satisfies each described the 2nd PMOS pipe for the number by the structure that is together in series of the 2nd PMOS pipe of a plurality of grids and drain electrode short circuit and described the 2nd PMOS pipe threshold voltage sum is poor greater than the threshold voltage of described the first voltage source and a described NMOS pipe; Perhaps, poor greater than the threshold voltage of described the first voltage source and a described NMOS pipe of the described strings of transistors connecting structure threshold voltage sum that satisfies each described the 3rd NMOS pipe for the number by the structure that is together in series of the 3rd NMOS pipe of a plurality of grids and drain electrode short circuit and described the 3rd NMOS pipe.
2. voltage detecting circuit as claimed in claim 1 is characterized in that: described second voltage test side is connected to an input end of the second comparer; The described reference voltage of another input termination of described the second comparer, the output terminal output second voltage alerting signal of described the second comparer; The working power of described the second comparer connects described the first voltage source.
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| CN201110344170.8A CN103091526B (en) | 2011-11-04 | 2011-11-04 | Voltage detection circuit |
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| CN201110344170.8A CN103091526B (en) | 2011-11-04 | 2011-11-04 | Voltage detection circuit |
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| CN103091526B CN103091526B (en) | 2015-02-04 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103604975A (en) * | 2013-11-18 | 2014-02-26 | 同济大学 | An anti-interference low-voltage detection circuit |
| CN104280590A (en) * | 2013-07-12 | 2015-01-14 | 上海华虹宏力半导体制造有限公司 | Voltage detection circuit applied to quick disconnection of power source |
| CN104897949A (en) * | 2015-05-25 | 2015-09-09 | 上海华虹宏力半导体制造有限公司 | Voltage detection circuit |
| CN107436615A (en) * | 2016-05-26 | 2017-12-05 | 中芯国际集成电路制造(上海)有限公司 | System for detecting supply voltage |
| CN108008179A (en) * | 2017-11-30 | 2018-05-08 | 无锡中微爱芯电子有限公司 | A kind of built-in MCU can switching at runtime voltage detecting point low-voltage detection circuit |
| CN108072786A (en) * | 2016-11-15 | 2018-05-25 | 北京同方微电子有限公司 | A kind of low-voltage detection circuit |
| CN109991462A (en) * | 2019-04-08 | 2019-07-09 | 美芯晟科技（北京）有限公司 | Voltage detecting circuit, method and system |
| CN110021992A (en) * | 2018-01-10 | 2019-07-16 | 厦门雅迅网络股份有限公司 | A kind of main secondary power switching circuit and method |
| US10634706B2 (en) | 2018-01-04 | 2020-04-28 | Faraday Technology Corp. | Core power detection circuit and associated input/output control system |
| CN111123797A (en) * | 2019-12-31 | 2020-05-08 | 天地（常州）自动化股份有限公司 | Power management system and method for coal mine monitoring system |
| CN114253338A (en) * | 2021-12-14 | 2022-03-29 | 上海富芮坤微电子有限公司 | Bandgap reference voltage generating circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104280590A (en) * | 2013-07-12 | 2015-01-14 | 上海华虹宏力半导体制造有限公司 | Voltage detection circuit applied to quick disconnection of power source |
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| US10634706B2 (en) | 2018-01-04 | 2020-04-28 | Faraday Technology Corp. | Core power detection circuit and associated input/output control system |
| CN110021992A (en) * | 2018-01-10 | 2019-07-16 | 厦门雅迅网络股份有限公司 | A kind of main secondary power switching circuit and method |
| CN110021992B (en) * | 2018-01-10 | 2022-02-18 | 厦门雅迅网络股份有限公司 | Main/standby power supply switching circuit and method |
| CN109991462A (en) * | 2019-04-08 | 2019-07-09 | 美芯晟科技（北京）有限公司 | Voltage detecting circuit, method and system |
| CN111123797A (en) * | 2019-12-31 | 2020-05-08 | 天地（常州）自动化股份有限公司 | Power management system and method for coal mine monitoring system |
| CN114253338A (en) * | 2021-12-14 | 2022-03-29 | 上海富芮坤微电子有限公司 | Bandgap reference voltage generating circuit |
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