CN112485640B - Method, device, equipment and storage medium for detecting built-in capacitor - Google Patents

Method, device, equipment and storage medium for detecting built-in capacitor Download PDF

Info

Publication number
CN112485640B
CN112485640B CN202011294573.1A CN202011294573A CN112485640B CN 112485640 B CN112485640 B CN 112485640B CN 202011294573 A CN202011294573 A CN 202011294573A CN 112485640 B CN112485640 B CN 112485640B
Authority
CN
China
Prior art keywords
built
capacitor
detected
detection
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011294573.1A
Other languages
Chinese (zh)
Other versions
CN112485640A (en
Inventor
赵旭
董亚明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou HYC Technology Co Ltd
Original Assignee
Suzhou HYC Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou HYC Technology Co Ltd filed Critical Suzhou HYC Technology Co Ltd
Priority to CN202011294573.1A priority Critical patent/CN112485640B/en
Publication of CN112485640A publication Critical patent/CN112485640A/en
Priority to KR1020237010525A priority patent/KR20230056773A/en
Priority to JP2023521908A priority patent/JP2023545138A/en
Priority to PCT/CN2021/120914 priority patent/WO2022105431A1/en
Application granted granted Critical
Publication of CN112485640B publication Critical patent/CN112485640B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2853Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/10Measuring sum, difference or ratio
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/30Measuring the maximum or the minimum value of current or voltage reached in a time interval
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2605Measuring capacitance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/62Testing of transformers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Measurement Of Resistance Or Impedance (AREA)

Abstract

The embodiment of the invention discloses a detection method and device for a built-in capacitor, detection equipment and a storage medium. The method comprises the following steps: acquiring charging current values of all channels to be detected, wherein a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected; respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value, and obtaining a detection voltage value of each built-in capacitor; and determining whether all the built-in capacitors of the chip to be detected are correctly installed according to all the charging current values and all the detection voltage values, and generating a detection result. By adopting the technical scheme, the embodiment of the invention can shorten the time consumed by detecting the built-in capacitor of the chip to be detected and improve the detection efficiency of the built-in capacitor, thereby realizing the detection of the built-in capacitor in the mass production stage of the chip to be detected.

Description

Method, device, equipment and storage medium for detecting built-in capacitor
Technical Field
The present invention relates to the field of detection technologies, and in particular, to a method and apparatus for detecting a built-in capacitor, a detection device, and a storage medium.
Background
At present, most of the external pins of the chip are connected by a capacitor inside the chip, so as to realize the filtering performance of the chip pins.
In order to ensure that the chip has no missed or misplaced capacitor in the production process, the built-in capacitor corresponding to the chip pin needs to be detected according to a chip design diagram. In the existing capacitor test technology, an oscillating circuit is mostly adopted, and the size of a capacitor is obtained by measuring the resonant frequency, so that whether the built-in capacitor of the chip is correctly pasted or not is judged.
However, this method of detecting requires a long time for single detection of the built-in capacitor of the chip, and is costly, and the built-in capacitor detection at the chip mass production stage cannot be realized.
Disclosure of Invention
In view of this, the embodiments of the present invention provide a method, an apparatus, a device and a storage medium for detecting a built-in capacitor, so as to implement the detection of the built-in capacitor in the mass production stage of a chip.
In a first aspect, an embodiment of the present invention provides a method for detecting a built-in capacitor, including:
acquiring charging current values of all channels to be detected, wherein a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected;
respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value, and obtaining a detection voltage value of each built-in capacitor;
and determining whether all the built-in capacitors of the chip to be detected are correctly installed according to all the charging current values and all the detection voltage values, and generating a detection result.
In a second aspect, an embodiment of the present invention provides a detection apparatus for a built-in capacitor, including:
the device comprises a current acquisition module, a detection module and a detection module, wherein the current acquisition module is used for acquiring a charging current value of each channel to be detected, and a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected;
the voltage detection module is used for respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value and obtaining the detection voltage value of each built-in capacitor;
and the result generation module is used for determining whether all the built-in capacitors of the chip to be detected are correctly installed according to all the charging current values and all the detection voltage values, and generating a detection result.
In a third aspect, an embodiment of the present invention provides a detection apparatus, including:
one or more processors;
a memory for storing one or more programs,
the one or more programs, when executed by the one or more processors, cause the one or more processors to implement the method for detecting a built-in capacitor according to the embodiments of the present invention.
In a fourth aspect, embodiments of the present invention further provide a computer readable storage medium having stored thereon a computer program, which when executed by a processor, implements a method for detecting a built-in capacitor according to an embodiment of the present invention.
In the technical scheme for detecting the built-in capacitors, the charging current values of the channels to be detected, which are connected with the built-in capacitors of the chip to be detected through the pins of the chip to be detected, are obtained, the charging current values of the channels to be detected are used for charging the built-in capacitors connected with the corresponding channels to be detected respectively, the detection voltage values of the built-in capacitors are obtained, and whether the built-in capacitors of the chip to be detected are correctly installed or not is determined according to the charging current values and the charging voltage values of the built-in capacitors, so that a detection result is generated. By adopting the technical scheme, the embodiment of the invention can detect the capacitance value of the built-in capacitor without using an oscillating circuit, can realize parallel detection of each built-in capacitor of the built-in chip to be detected, can shorten the time consumed by detecting the built-in capacitor of the chip to be detected, and improves the detection efficiency of the built-in capacitor, thereby realizing the detection of the built-in capacitor in the mass production stage of the chip to be detected.
Drawings
Other features, objects and advantages of the present invention will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the accompanying drawings in which:
fig. 1 is a flow chart of a method for detecting a built-in capacitor according to a first embodiment of the present invention;
fig. 2 is a flow chart of a method for detecting a built-in capacitor according to a second embodiment of the present invention;
fig. 3 is a block diagram of a detecting device with a built-in capacitor according to a third embodiment of the present invention;
fig. 4 is a schematic structural diagram of a detection device according to a fourth embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the matters related to the present invention are shown in the accompanying drawings. Furthermore, embodiments of the invention and features of the embodiments may be combined with each other without conflict.
Example 1
The embodiment of the invention provides a detection method of a built-in capacitor. The method can be executed by a detection device with a built-in capacitor, wherein the device can be realized by software and/or hardware, can be integrated in detection equipment and is suitable for a scene of detecting the built-in capacitor of a chip. Fig. 1 is a flow chart of a method for detecting a built-in capacitor according to an embodiment of the invention. As shown in fig. 1, the method for detecting a built-in capacitor provided in this embodiment may include:
s110, obtaining charging current values of all channels to be detected, wherein a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected.
The charge current value is understood to be the current value of the current that each test channel needs to input to the built-in capacitor to which it is connected when detecting the built-in capacitor. The chip to be inspected may be understood as a chip for which the built-in capacitor is required to be inspected, such as a chip produced in mass. The channels to be detected can be detection channels which need to be opened in the detection, different channels to be detected are connected with different pins of the chips to be detected, the pins connected with the channels to be detected can be pins of the same chip to be detected, the pins of different chips to be detected can also be pins of different chips to be detected, namely, the detection equipment can detect the built-in capacitors of only one chip to be detected at a time, the built-in capacitors of different chips to be detected can also be detected, and the detection equipment can be used for detecting the number of the built-in capacitors of different chips to be detected according to actual detection requirements and the number of the built-in capacitors to be detected of the chips to be detected, if the number of the chips to be detected is more, and the number of the built-in capacitors to be detected of each chip to be detected is less (such as not more than 180), and the detection of the chips to be detected can be performed simultaneously; when the number of chips to be detected is small or the number of built-in capacitors to be detected of each chip to be detected is large (e.g. greater than 300), only one chip to be detected can be detected at a time.
In this embodiment, the detection apparatus may be provided with a plurality of detection channels, for example, the number of detection channels may be greater than 100 or 200, and for example, the detection apparatus may be provided with 360 detection channels; correspondingly, when each built-in capacitor in the chip to be detected is detected, the pin connected with each built-in capacitor can be connected with one or two detection channels of the detection equipment, for example, when one end of the built-in capacitor is grounded, the pin connected with the other end of the built-in capacitor can be connected with one detection channel of the detection equipment; when both ends of the built-in capacitor are not grounded, the pin connected to one end of the built-in capacitor can be connected with one detection channel of the detection device, and the pin connected to the other end of the built-in capacitor can be connected with the other detection channel of the detection device. The following description will take an example in which one end of the built-in capacitor is grounded.
In one embodiment, the charging current value of each channel to be detected may be set by a detecting person, for example, after each built-in capacitor to be detected of the chip to be detected is connected to different detecting channels of the detecting device through a pin connected to the built-in capacitor, the detecting person may set the charging current value of the channel to be detected and each channel to be detected to be opened (i.e. to be charged this time) through an upper computer, that is, the detecting person may input the charging current value of each detecting channel through the upper computer, and the upper computer obtains the detecting current value input by the detecting person and writes the detecting current value into a memory configured by the detecting device. The memory of the detection device may be any type of memory, preferably Double Data Rate (Double Data Rate) synchronous dynamic random access memory, and the memory may be physically connected to a processor of the detection device, and the processor of the detection device may be a field programmable gate array (Field Programmable Gate Array, FPGA).
In another embodiment, the charging current value of each channel to be detected may be calculated by the detection device. At this time, preferably, the acquiring the charging current value of each channel to be detected includes: acquiring capacitor parameters of built-in capacitors connected with all channels to be detected, wherein the capacitor parameters comprise theoretical capacitance values, charging current thresholds and detection voltage thresholds; and determining the charging current value of each channel to be detected according to the preset detection time and the capacitor parameter.
The capacitor parameters may include a theoretical capacitance value of the built-in capacitor, a charging current threshold and a detection voltage value, the theoretical capacitance value may be understood as a theoretical value of a capacitance of the built-in capacitor, the charging current threshold may be understood as a current threshold when the built-in capacitor works normally, the charging current threshold may include a maximum current threshold and a minimum current threshold, the detection voltage threshold may be understood as a voltage value to which the capacitor at least needs to rise in the current detection process, and the capacitor parameters of the built-in capacitors may be input into the upper computer by a detection personnel. The detection time range may be understood as a detection time of the present detection, which may be a preset time value, or may be a preset time range, and the detection time is described below as an example of a preset time value.
In the above embodiment, the detection personnel can set the current detection time, and accordingly, the detection equipment can control the voltage value of each built-in capacitor to rise to a proper voltage value within the detection time so as to perform detection, so that when the detection time is reached, the detection of each built-in capacitor is completed, and each built-in capacitor can complete the detection synchronously as much as possible during the same detection, thereby reducing the waiting time of the detection personnel.
The detection personnel can set the channels to be detected which need to be opened at this time and the connection relation between each channel to be detected and each built-in capacitor of the chips to be detected before detecting the chips to be detected produced in batch at this time, and input the capacitor parameters and the detection time of each built-in capacitor of the chips to be detected into the upper computer; correspondingly, the upper computer can write the identification information of the channels to be detected, which are required to be opened at the time and are input by the detection personnel, capacitor parameters of the built-in capacitors connected with the channels to be detected and detection time into the detection equipment; therefore, the detection device can determine the channel to be detected to be opened according to the identification information written by the upper computer, and determine the charging current value of the detection channel according to the detection time written by the upper computer and the capacitor parameters of the built-in capacitor connected with each channel to be detected, for example, the charging current value can be based on the formula i 0 =C 0 ×u 0 /t 0 Calculating to obtain the charging current value of each channel to be detected, wherein i 0 C is the charging current value of the channel to be detected 0 Theoretical capacitance value of built-in capacitor connected to channel to be detected, u 0 The detection voltage value t of the built-in capacitor connected with the channel to be detected 0 For the detection time.
When the upper computer writes the identification information of the to-be-detected channel which is input by the detection personnel and needs to be opened in the detection equipment, for example, a channel register used for recording the to-be-opened detection channel and the detection channel which does not need to be opened can be arranged in the detection equipment, each bit in the channel register corresponds to one detection channel, bit is 1 and indicates that the corresponding detection channel needs to be opened during detection, bit is 0 and indicates that the corresponding detection channel does not need to be opened during detection, so that the upper computer can set the bit corresponding to the to-be-detected channel which needs to be opened in the current in the channel register as 1 and set the bit corresponding to the non-to-be-detected channel which needs to be opened in the current in the channel register as 0.
It can be understood that, since the detection personnel usually consider the charging current threshold value of the built-in capacitor when setting the detection time, that is, the detection time set by the detection personnel generally does not cause the actual charging current of the built-in capacitor to be out of the charging current range when the detection personnel normally works, when determining the charging current value of each channel to be detected, the embodiment also can determine the charging current value of each detection channel only according to the preset detection time and the theoretical capacitance value of the built-in capacitor without considering the charging current threshold value of each built-in capacitor, and at this time, the capacitor parameters can only include the theoretical capacitance value and the detection voltage threshold value correspondingly.
S120, respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting the corresponding charging current value, and obtaining the detection voltage value of each built-in capacitor.
The detected voltage value of the built-in capacitor can be understood as the voltage value of the built-in capacitor detected during the charging process.
In this embodiment, the detection device may detect, in parallel, a detection capacitance of a built-in capacitor connected to each channel to be detected, for example, control a charging device for charging the built-in capacitor provided in each channel to be detected to charge the built-in capacitor connected to the channel to be detected with a charging current value of the channel to be detected to which the charging device belongs, and control a detection device provided in each channel to be detected to detect a detection voltage value of the channel to which the charging device belongs.
In one embodiment, the charging device disposed in the channels to be detected may be a parameter measurement unit (Parametric Measurement Unit, PMU), the detecting device disposed in the channels to be detected may be an analog-to-digital conversion (Analogue to Digital Conversion, ADC) chip, and correspondingly, the controlling the channels to be detected to charge the connected built-in capacitors with corresponding charging current values respectively, and obtaining the detected voltage values of the built-in capacitors includes: aiming at each channel to be detected, controlling a parameter measurement unit in the channel to be detected to charge a built-in capacitor connected with the channel to be detected by adopting a target current, and periodically detecting a detection voltage value of the built-in capacitor through an analog-to-digital conversion chip in the channel to be detected; the current value of the target current is the charging current value of the built-in capacitor connected with the channel to be detected.
In the above embodiment, each detection channel of the detection device may be provided with a parameter measurement unit and an analog-to-digital conversion chip, and the parameter measurement unit in a certain channel to be detected may be respectively connected to the analog-to-digital conversion chip in the channel to be detected, a pin of the chip to be detected, and a processor of the detection device; the analog-digital conversion chip in one channel to be detected can be respectively connected with the pins of the chip to be detected and the processor of the detection equipment.
For example, the processor of the detection device may send a charging instruction for controlling the parameter measurement unit to charge the built-in capacitor connected to the channel to be detected according to the charging current value of the corresponding channel to be detected to the parameter measurement unit in each channel to be detected at the same time; correspondingly, after receiving the charging instruction sent by the processor, the parameter measurement unit in each channel to be detected can charge the built-in capacitor connected with the channel to be detected to which the parameter measurement unit belongs according to the charging current value corresponding to the charging instruction.
In this embodiment, each channel to be detected may continuously charge the built-in capacitor connected to the channel to be detected until the built-in capacitor has reached the maximum amount of power that the built-in capacitor can accommodate or a charging stopping instruction sent by the processor is received; the method for detecting the built-in capacitor according to the present embodiment may further include: and when the charging time of each built-in capacitor reaches a preset timeout time, controlling each channel to be detected to stop charging the connected built-in capacitor. The timeout time may be set by a detecting person or calculated by the detecting device according to a detecting time set by the detecting person, for example, the timeout time is set to a set multiple (for example, 3 times) of the detecting time; the detection device may send the charging stopping instruction to the to-be-detected channel when the size or the number of the detected voltage values detected by a certain to-be-detected channel can determine whether the built-in capacitor connected to the to-be-detected channel is correctly mounted, or send the charging stopping instruction to each to-be-detected channel when the size or the number of the detected voltage values detected by all to-be-detected channels can determine whether the built-in capacitor connected to the corresponding to-be-detected channel is correctly mounted, which is not limited in this embodiment.
S130, determining whether all the built-in capacitors of the chip to be detected are correctly mounted according to all the charging current values and all the detection voltage values, and generating a detection result.
In this embodiment, the method for determining whether each built-in capacitor is installed correctly may be selected according to needs, for example, whether the difference between a first voltage value actually achieved by a voltage value of a certain built-in capacitor within a certain time period and a second voltage value that should be achieved within the certain time period is within a certain voltage range may be determined, if yes, the built-in capacitor is determined to be installed correctly, and if not, the built-in capacitor is determined to be installed incorrectly; the capacitance value of the built-in capacitor can be calculated according to the charging current value and the detection voltage value of the built-in capacitor, if the capacitance value is within a certain error range with the theoretical capacitance value, the built-in capacitor is determined to be installed correctly, and if not, the built-in capacitor is determined to be installed incorrectly.
According to the detection method of the built-in capacitors, provided by the embodiment of the invention, the charging current value of the to-be-detected channel connected with each built-in capacitor of the to-be-detected chip through the pin of the to-be-detected chip is obtained, the charging current value of each to-be-detected channel is used for charging the built-in capacitor connected with the corresponding to-be-detected channel, the detection voltage value of each built-in capacitor is obtained, and whether each built-in capacitor of the to-be-detected chip is correctly installed is determined according to the charging current value and the charging voltage value of each built-in capacitor, so that a detection result is generated. According to the technical scheme, the capacitance value of the built-in capacitor can be detected without using an oscillating circuit, parallel detection of all built-in capacitors of the chip to be detected can be realized, the time consumed by detecting the built-in capacitor of the chip to be detected can be shortened, the detection efficiency of the built-in capacitor is improved, and therefore the built-in capacitor detection of the chip to be detected in the mass production stage is realized.
Example two
Fig. 2 is a flow chart of a method for detecting a built-in capacitor according to the present embodiment. Based on the above embodiments, the present embodiment optimizes "whether each built-in capacitor of the chip to be detected is correctly mounted according to each charging current value and each detection voltage value" as: calculating a detection capacitance value of each built-in capacitor according to the charging current value and the detection voltage value of each built-in capacitor; and sending the detection capacitance value of each built-in capacitor to an upper computer so as to determine whether each built-in capacitor of the chip to be detected is correctly installed or not according to each detection capacitance value through the upper computer.
Further, before each channel to be detected is controlled to charge the connected built-in capacitor by adopting the corresponding charging current value, the method further comprises: each channel to be detected is controlled to apply 0V voltage to the connected built-in capacitor so as to release residual charges in each built-in capacitor.
Accordingly, as shown in fig. 2, the method for detecting a built-in capacitor provided in this embodiment may include:
s210, acquiring a charging current value of each channel to be detected, wherein a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected.
S220, respectively controlling each channel to be detected to apply 0V voltage to the connected built-in capacitor so as to release residual charges in each built-in capacitor.
In this embodiment, since charges may remain in the built-in capacitors of the chip to be detected, after each channel to be detected is enabled, the parameter measurement unit in each channel to be detected may be controlled to output a voltage of 0V to the built-in capacitor connected to the channel to be detected to which the parameter measurement unit belongs, so as to control the discharging of each built-in capacitor, and avoid the influence of the remaining charges in the built-in capacitor on the detection of the built-in capacitor. Wherein the residual charge can be connected to the residual charge in the built-in capacitor.
S230, aiming at each channel to be detected, controlling a parameter measurement unit in the channel to be detected to charge a built-in capacitor connected with the channel to be detected by adopting a target current, and periodically detecting a detection voltage value of the built-in capacitor through an analog-to-digital conversion chip in the channel to be detected; the current value of the target current is the charging current value of the built-in capacitor connected with the channel to be detected.
S240, calculating the detection capacitance value of each built-in capacitor according to the charging current value and the detection voltage value of each built-in capacitor.
The detected capacitance value may be understood as a capacitance value of the built-in capacitor detected by the detection device.
Specifically, the change amount of the detected voltage value of each built-in capacitor in unit time can be calculated according to the detected voltage values of each built-in capacitor in at least two detection periods, and then the detected capacitance value of each built-in capacitor is calculated according to the charging current of each built-in capacitor and the change amount of the detected voltage value of each built-in capacitor in unit time.
In order to further improve the accuracy of the calculated detected capacitance value of the built-in capacitor and further improve the accuracy of the finally generated detection result, it is preferable that the calculating the detected capacitance value of each built-in capacitor according to the charging current value and the detected voltage value of each built-in capacitor includes: for each built-in capacitor, determining the voltage rising time of the built-in capacitor from a preset minimum voltage value to a preset maximum voltage value according to the detection voltage value of the built-in capacitance value in each detection period; and calculating the detection capacitance value of the built-in capacitor according to the charging current value, the voltage rising time and the voltage difference value between the preset maximum voltage value and the preset minimum voltage value. The preset minimum voltage value and the preset maximum voltage value can be two voltage values in a time period in which the capacitor is more stable to charge, and the two voltage values can be preset by a detection personnel.
The detection device may periodically detect a detection voltage value of each built-in capacitor after controlling each channel to be detected to charge the connected built-in capacitor, determine whether the detection voltage value reaches a preset minimum voltage value, start timing when the detection voltage value reaches the preset minimum voltage value, continuously determine whether the detection voltage value of the built-in capacitor reaches a preset maximum voltage value, and stop timing when the detection voltage value reaches the preset maximum voltage value, so as to obtain a voltage rise time of the built-in capacitor; and then calculating the ratio of the difference value between the preset maximum voltage value and the preset minimum voltage value to the voltage rising time, and further calculating the product of the ratio and the charging current value of the built-in capacitor to obtain the detection capacitance value of the built-in capacitor.
S250, sending the detection capacitance value of each built-in capacitor to an upper computer, so that whether each built-in capacitor of the chip to be detected is correctly installed or not is determined by the upper computer according to each detection capacitance value, and a detection result is generated.
For example, after the detection device detects the detected capacitance value of each built-in capacitor, the detection capacitance value of each built-in capacitor may be stored in the memory and notified to the upper computer that the detection is completed, for example, a detection register in the detection device is set from 0 to 1 to characterize that the detection capacitance value of each built-in capacitor is completed; when the upper computer monitors that the detection register is set to be 1, the detection of the detection capacitance value of each built-in capacitor is finished, the detection capacitance value of each built-in capacitor is read from a memory of the detection equipment, whether the difference value between the detection capacitance value of each built-in capacitor and the theoretical capacitance value of each built-in capacitor is within a preset capacitance range or not is further judged, and if the difference value is within the preset capacitance range, the correct installation of the built-in capacitor can be judged; if not, the built-in capacitor can be judged to be incorrectly installed, and the detection result of the chip to be detected is further determined to be unqualified.
According to the method for detecting the built-in capacitors, provided by the embodiment of the invention, the charging current value of each channel to be detected is obtained, the channels to be detected are firstly controlled to apply 0V voltage to the connected built-in capacitors respectively, then the channels to be detected are controlled to charge the connected built-in capacitors by adopting the corresponding charging current values, the detection voltage values of the built-in capacitors are detected, the detection capacitors of the built-in capacitors are calculated according to the charging current values and the detection voltage values, and the detection capacitors of the built-in capacitors are sent to an upper computer, so that the upper computer judges whether the built-in capacitors are correctly installed or not through the detection capacitance values of the built-in capacitors, and a detection result is generated. By adopting the technical scheme, the accuracy of the detected capacitance value of the built-in capacitor obtained by detection can be further improved, and the accuracy of the detection result of the chip to be detected is further improved.
Example III
The third embodiment of the invention provides a detection device with a built-in capacitor. The device can be realized by software and/or hardware, can be integrated in a detection device, and can detect the built-in capacitor by executing a detection method of the built-in capacitor. Fig. 3 is a block diagram of a detection device with a built-in capacitor according to a third embodiment of the present invention. As shown in fig. 3, the apparatus includes: a current acquisition module 301, a voltage detection module 302, and a result generation module 303, wherein,
the current acquisition module 301 is configured to acquire a charging current value of each channel to be detected, where a built-in capacitor of a chip to be detected is connected to at least one channel to be detected through a pin of the chip to be detected;
the voltage detection module 302 is configured to respectively control each channel to be detected to charge the connected built-in capacitor with a corresponding charging current value, and obtain a detection voltage value of each built-in capacitor;
and the result generating module 303 is configured to determine whether each built-in capacitor of the chip to be detected is correctly mounted according to each charging current value and each detection voltage value, and generate a detection result.
In the detection device for built-in capacitors provided in the third embodiment of the present invention, the current obtaining module 301 obtains the charging current value of the to-be-detected channel connected to each built-in capacitor of the to-be-detected chip through the pin of the to-be-detected chip, the voltage detecting module 302 charges the built-in capacitor connected to the corresponding to-be-detected channel by using the charging current value of each to-be-detected channel, and obtains the detection voltage value of each built-in capacitor, and the result generating module 303 determines whether each built-in capacitor of the to-be-detected chip is correctly installed according to the charging current value and the charging voltage value of each built-in capacitor, so as to generate the detection result. According to the technical scheme, the capacitance value of the built-in capacitor can be detected without using an oscillating circuit, parallel detection of all built-in capacitors of the chip to be detected can be realized, the time consumed by detecting the built-in capacitor of the chip to be detected can be shortened, the detection efficiency of the built-in capacitor is improved, and therefore the built-in capacitor detection of the chip to be detected in the mass production stage is realized.
In the above solution, the voltage detection module 302 may specifically be configured to: aiming at each channel to be detected, controlling a parameter measurement unit in the channel to be detected to charge a built-in capacitor connected with the channel to be detected by adopting a target current, and periodically detecting a detection voltage value of the built-in capacitor through an analog-to-digital conversion chip in the channel to be detected; the current value of the target current is the charging current value of the built-in capacitor connected with the channel to be detected.
In the above solution, the result generating module 303 may include: a capacitance calculating unit for calculating a detection capacitance value of each built-in capacitor based on the charging current value and the detection voltage value of each built-in capacitor; and the result generating unit is used for sending the detection capacitance value of each built-in capacitor to the upper computer so as to determine whether each built-in capacitor of the chip to be detected is correctly installed or not according to each detection capacitance value through the upper computer and generate a detection result.
In the above aspect, the capacitance calculating unit may include: a time detection subunit, configured to determine, for each built-in capacitor, a voltage rise time of the built-in capacitor from a preset minimum voltage value to a preset maximum voltage value according to a detected voltage value of the built-in capacitor in each detection period; and the capacitance calculating subunit is used for calculating the detection capacitance value of the built-in capacitor according to the charging current value, the voltage rising time and the voltage difference value between the preset maximum voltage value and the preset minimum voltage value.
Further, the detection device for a built-in capacitor provided in this embodiment may further include: and the charging stopping module is used for controlling each channel to be detected to stop charging the connected built-in capacitor when the charging time of each built-in capacitor reaches the preset timeout time.
Further, the detection device for a built-in capacitor provided in this embodiment may further include: and the charge release module is used for respectively controlling each channel to be detected to apply 0V voltage to the connected built-in capacitor before the channels to be detected are respectively controlled to charge the connected built-in capacitor by adopting the corresponding charging current value so as to release residual charges in each built-in capacitor.
In the above aspect, the current acquisition module may include: the parameter acquisition unit is used for acquiring capacitor parameters of the built-in capacitor connected with each channel to be detected, wherein the capacitor parameters comprise theoretical capacitance values, charging current thresholds and detection voltage thresholds; and the current determining unit is used for determining the charging current value of each channel to be detected according to the preset detection time and the capacitor parameter.
The detection device for the built-in capacitor provided by the third embodiment of the invention can execute the detection method for the built-in capacitor provided by any embodiment of the invention, and has the corresponding functional modules and beneficial effects of executing the detection method for the built-in capacitor. Technical details not described in detail in this embodiment can be seen in the method for detecting a built-in capacitor provided in any embodiment of the present invention.
Example IV
Fig. 4 is a schematic structural diagram of a detection device according to a fourth embodiment of the present invention, where, as shown in fig. 4, the detection device includes a processor 40 and a memory 41, and may further include a plurality of detection channels 42; the number of processors 40 in the detection device may be one or more, one processor 40 being taken as an example in fig. 4; the processor 40, the memory 41 and the detection channels in the detection device may be connected by a bus or other means.
The memory 41 is a computer-readable storage medium, and may be used to store a software program, a computer-executable program, and modules, such as program instructions/modules corresponding to the method for detecting a built-in capacitor in the embodiment of the present invention (for example, the current acquisition module 301, the voltage detection module 302, and the result generation module 303 in the device for detecting a built-in capacitor). The processor 40 executes various functional applications of the detection device and data processing by running software programs, instructions and modules stored in the memory 41, i.e., implements the above-described method of detecting the built-in capacitor.
The memory 41 may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, at least one application program required for functions; the storage data area may store data created according to the use of the terminal, etc. In addition, memory 41 may include high-speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other non-volatile solid-state storage device. In some examples, memory 41 may further include memory located remotely from processor 40, which may be connected to the detection device via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
The detection channel 42 may include a parameter measurement unit 421 and an analog-to-digital conversion chip 422, the parameter measurement unit 421 may be used to charge the built-in capacitor, and the analog-to-digital conversion chip 422 may be used to detect a detected capacitance value of the built-in capacitor and convert it from an analog signal to a digital signal. A fourth embodiment of the present invention also provides a storage medium containing computer-executable instructions, which when executed by a computer processor, are for performing a method of detecting a built-in capacitor, the method comprising:
acquiring charging current values of all channels to be detected, wherein a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected;
respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value, and obtaining a detection voltage value of each built-in capacitor;
and determining whether all the built-in capacitors of the chip to be detected are correctly installed according to all the charging current values and all the detection voltage values, and generating a detection result.
Of course, the storage medium containing the computer executable instructions provided in the embodiments of the present invention is not limited to the method operations described above, and may also perform the related operations in the method for detecting a built-in capacitor provided in any embodiment of the present invention.
From the above description of embodiments, it will be clear to a person skilled in the art that the present invention may be implemented by means of software and necessary general purpose hardware, but of course also by means of hardware, although in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art in the form of a software product, which may be stored in a computer readable storage medium, such as a floppy disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a FLASH Memory (FLASH), a hard disk or an optical disk of a computer, etc., and include several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the method according to the embodiments of the present invention.
It should be noted that, in the embodiment of the detection device with a built-in capacitor, each unit and module included are only divided according to the functional logic, but not limited to the above-mentioned division, so long as the corresponding functions can be implemented; in addition, the specific names of the functional units are also only for distinguishing from each other, and are not used to limit the protection scope of the present invention.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.

Claims (9)

1. A method for detecting a built-in capacitor is characterized in that,
acquiring charging current values of all channels to be detected, wherein a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected;
respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value, and obtaining a detection voltage value of each built-in capacitor;
determining whether all built-in capacitors of the chip to be detected are correctly installed according to all charging current values and all detection voltage values, and generating a detection result;
the obtaining the charging current value of each channel to be detected includes:
acquiring capacitor parameters of built-in capacitors connected with all channels to be detected, wherein the capacitor parameters comprise theoretical capacitance values, charging current thresholds and detection voltage thresholds;
determining the charging current value of each channel to be detected according to preset detection time and the capacitor parameters;
and when the detection equipment can determine whether the built-in capacitor connected with the channel to be detected is correctly installed or not, sending a charging stopping instruction to the channel to be detected, or when the detection equipment can determine whether the built-in capacitor connected with the corresponding detection channel is correctly installed or not, sending a charging stopping instruction to each channel to be detected.
2. The method according to claim 1, wherein the controlling of each channel to be detected to charge the connected built-in capacitor with the corresponding charging current value and obtaining the detection voltage value of each built-in capacitor includes:
aiming at each channel to be detected, controlling a parameter measurement unit in the channel to be detected to charge a built-in capacitor connected with the channel to be detected by adopting a target current, and periodically detecting a detection voltage value of the built-in capacitor through an analog-to-digital conversion chip in the channel to be detected; the current value of the target current is the charging current value of the built-in capacitor connected with the channel to be detected.
3. The method according to claim 2, wherein the determining whether each built-in capacitor of the chip to be detected is properly mounted based on each charging current value and each detection voltage value includes:
calculating a detection capacitance value of each built-in capacitor according to the charging current value and the detection voltage value of each built-in capacitor;
and sending the detection capacitance value of each built-in capacitor to an upper computer so as to determine whether each built-in capacitor of the chip to be detected is correctly installed or not according to each detection capacitance value through the upper computer.
4. A method according to claim 3, wherein calculating the detection capacitance value of each built-in capacitor from the charge current value and the detection voltage value of each built-in capacitor comprises:
for each built-in capacitor, determining the voltage rising time of the built-in capacitor from a preset minimum voltage value to a preset maximum voltage value according to the detection voltage value of the built-in capacitor in each detection period;
and calculating the detection capacitance value of the built-in capacitor according to the charging current value, the voltage rising time and the voltage difference value between the preset maximum voltage value and the preset minimum voltage value.
5. The method of any one of claims 1-4, further comprising:
and when the charging time of each built-in capacitor reaches a preset timeout time, controlling each channel to be detected to stop charging the connected built-in capacitor.
6. The method according to any one of claims 1 to 4, further comprising, before said separately controlling each channel to be detected to charge the connected built-in capacitor with the corresponding charging current value:
each channel to be detected is controlled to apply 0V voltage to the connected built-in capacitor so as to release residual charges in each built-in capacitor.
7. A detection device with a built-in capacitor is characterized in that,
the device comprises a current acquisition module, a detection module and a detection module, wherein the current acquisition module is used for acquiring a charging current value of each channel to be detected, and a built-in capacitor of a chip to be detected is connected with at least one channel to be detected through a pin of the chip to be detected;
the voltage detection module is used for respectively controlling each channel to be detected to charge the connected built-in capacitor by adopting a corresponding charging current value and obtaining the detection voltage value of each built-in capacitor;
the result generation module is used for determining whether all the built-in capacitors of the chip to be detected are correctly installed according to all the charging current values and all the detection voltage values, and generating detection results;
wherein, the electric current acquisition module includes:
the parameter acquisition unit is used for acquiring capacitor parameters of the built-in capacitor connected with each channel to be detected, wherein the capacitor parameters comprise theoretical capacitance values, charging current thresholds and detection voltage thresholds;
a current determining unit, configured to determine a charging current value of each channel to be detected according to a preset detection time and the capacitor parameter;
and when the detection equipment can determine whether the built-in capacitor connected with the channel to be detected is correctly installed or not, sending a charging stopping instruction to the channel to be detected, or when the detection equipment can determine whether the built-in capacitor connected with the corresponding detection channel is correctly installed or not, sending a charging stopping instruction to each channel to be detected.
8. A detection apparatus, characterized by comprising:
one or more processors;
a memory for storing one or more programs,
when executed by the one or more processors, causes the one or more processors to implement the built-in capacitor detection apparatus method of any one of claims 1-6.
9. A computer-readable storage medium, on which a computer program is stored, characterized in that the program, when being executed by a processor, implements the method of the built-in capacitor detection device as claimed in any one of claims 1-6.
CN202011294573.1A 2020-11-18 2020-11-18 Method, device, equipment and storage medium for detecting built-in capacitor Active CN112485640B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN202011294573.1A CN112485640B (en) 2020-11-18 2020-11-18 Method, device, equipment and storage medium for detecting built-in capacitor
KR1020237010525A KR20230056773A (en) 2020-11-18 2021-09-27 Detection method, apparatus, detection device and storage medium of built-in capacitor
JP2023521908A JP2023545138A (en) 2020-11-18 2021-09-27 Built-in capacitor detection method, device, detection equipment, and storage medium
PCT/CN2021/120914 WO2022105431A1 (en) 2020-11-18 2021-09-27 Built-in capacitor detection method and apparatus, detection device, and storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011294573.1A CN112485640B (en) 2020-11-18 2020-11-18 Method, device, equipment and storage medium for detecting built-in capacitor

Publications (2)

Publication Number Publication Date
CN112485640A CN112485640A (en) 2021-03-12
CN112485640B true CN112485640B (en) 2023-06-27

Family

ID=74931732

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011294573.1A Active CN112485640B (en) 2020-11-18 2020-11-18 Method, device, equipment and storage medium for detecting built-in capacitor

Country Status (4)

Country Link
JP (1) JP2023545138A (en)
KR (1) KR20230056773A (en)
CN (1) CN112485640B (en)
WO (1) WO2022105431A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110353714B (en) * 2019-07-19 2023-02-03 上海联影医疗科技股份有限公司 CT equipment abnormity detection method, device, equipment and storage medium
CN112485640B (en) * 2020-11-18 2023-06-27 苏州华兴源创科技股份有限公司 Method, device, equipment and storage medium for detecting built-in capacitor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9825435D0 (en) * 1998-11-20 1999-01-13 Philipp Harald Charge transfer capacitance measurement circuit
US6624640B2 (en) * 2001-02-07 2003-09-23 Fluke Corporation Capacitance measurement
US7460441B2 (en) * 2007-01-12 2008-12-02 Microchip Technology Incorporated Measuring a long time period
US7830158B2 (en) * 2007-12-28 2010-11-09 3M Innovative Properties Company Time-sloped capacitance measuring circuits and methods
JP2010152876A (en) * 2008-11-26 2010-07-08 Seiko Instruments Inc Electrostatic capacitance detection device, electrostatic capacitance detection circuit, electrostatic capacitance detection method and initialization method
CN102478609A (en) * 2010-11-30 2012-05-30 英业达股份有限公司 Capacitor measuring method and capacitor test circuit
JP5797973B2 (en) * 2011-02-08 2015-10-21 ローム株式会社 CAPACITANCE / VOLTAGE CONVERSION CIRCUIT, INPUT DEVICE USING SAME, ELECTRONIC DEVICE, AND CAPACITANCE / VOLTAGE CONVERSION METHOD
CN103487662B (en) * 2013-07-24 2016-01-13 泰凌微电子(上海)有限公司 Capacitive detection circuit
CN103576001A (en) * 2013-11-08 2014-02-12 埃泰克汽车电子(芜湖)有限公司 Detection method of filter capacitor of input circuit of automobile electronic module
US9335370B2 (en) * 2014-01-16 2016-05-10 Globalfoundries Inc. On-chip test for integrated AC coupling capacitors
KR101650012B1 (en) * 2015-06-22 2016-08-22 (주)엘센 Sensor device and sensing method
CN207036994U (en) * 2017-06-21 2018-02-23 苏州工业园区海的机电科技有限公司 A kind of coupled capacitor measurement apparatus of EDP/VBYONE signals
KR102337627B1 (en) * 2018-01-24 2021-12-09 선전 구딕스 테크놀로지 컴퍼니, 리미티드 Capacitance detection circuit, touch device and terminal device
EP3617720B1 (en) * 2018-06-21 2021-12-01 Shenzhen Goodix Technology Co., Ltd. Touch device and terminal device
CN111142705B (en) * 2019-12-18 2023-09-08 基合半导体(宁波)有限公司 Self-capacitance detection device and method and mobile terminal
CN112485640B (en) * 2020-11-18 2023-06-27 苏州华兴源创科技股份有限公司 Method, device, equipment and storage medium for detecting built-in capacitor

Also Published As

Publication number Publication date
JP2023545138A (en) 2023-10-26
CN112485640A (en) 2021-03-12
WO2022105431A1 (en) 2022-05-27
KR20230056773A (en) 2023-04-27

Similar Documents

Publication Publication Date Title
CN112485640B (en) Method, device, equipment and storage medium for detecting built-in capacitor
CN104714182A (en) Method and system for determining state-of-charge value of battery
US20180081775A1 (en) Test unit and test method for efficient testing during long idle periods
WO2020244604A1 (en) Circuit detection method and apparatus, device, and storage medium
CN113064086A (en) Method, device and system for testing self-discharge rate of lithium ion battery
WO2022062651A1 (en) Method for generating electrochemical impedance spectroscopy of battery, medium, and computer device
US11525862B2 (en) Methods, storage media, and electronic devices for calculating short-circuit current of battery
WO2016041398A1 (en) Method for storing battery level information of mobile terminal and mobile terminal
US20220294039A1 (en) Battery management system and battery pack
JP2021190415A (en) Smart battery device
CN115656834A (en) Battery capacity prediction method and device and electronic equipment
CN114121137A (en) Nand Flash particle power consumption test system and method
US9823971B2 (en) Data processing apparatus and data processing method
CN107272862A (en) Determine the method and terminal of terminal handler voltage
CN109728625B (en) SOC calibration method, device and system for energy storage of data center
CN113383331A (en) Watchdog system, watchdog method and battery management system comprising watchdog system
JP2008117500A (en) Device test equipment
CN111679112B (en) Electric energy meter electricity stealing type judging method and device, computer equipment and storage medium
CN116298998B (en) Battery cell detection method and device, electronic equipment and storage medium
CN217404755U (en) MCU chip reference voltage automatic calibration circuit and MCU chip
CN115144773B (en) Voltage measurement system and method for battery pack
CN109490808B (en) Method, system and storage medium for correcting voltage acquisition error of insulation detection module
CN117765996A (en) Method, device, system, equipment and medium for testing refresh frequency of memory
CN117192251A (en) Aging performance testing method, device and equipment for super capacitor and storage medium
CN109444752A (en) A kind of RTC cell voltage test method, device and server

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant