CN103824846A - Multi-field-effect transistor integrated module - Google Patents
Multi-field-effect transistor integrated module Download PDFInfo
- Publication number
- CN103824846A CN103824846A CN201410092032.9A CN201410092032A CN103824846A CN 103824846 A CN103824846 A CN 103824846A CN 201410092032 A CN201410092032 A CN 201410092032A CN 103824846 A CN103824846 A CN 103824846A
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- field
- effect transistor
- integrated module
- transistor integrated
- heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention discloses a multi-field-effect transistor integrated module belonging to the technical field of field-effect transistors. The multi-field-effect transistor integrated module comprises a group of metal oxide semiconductor field-effect tubes, a copper-coated ceramic plate and a heat radiator, wherein the metal oxide semiconductor field-effect tubes are arranged on the copper-coated ceramic plate. The multi-field-effect transistor integrated module is characterized in that a heat conducting silicon grease layer with the thickness of 50-150mu m is matched between the copper-coated ceramic plate and the heat radiator. The multi-field-effect transistor integrated module has the advantages that the heat conducting silicon grease layer is matched between the copper-coated ceramic plate and the heat radiator, so that heat formed in an application process of the multi-field-effect transistor integrated module can be more rapidly and directly conducted out, the medium used in a heat conducting process is reduced, the heat radiating effect of the multi-field-effect transistor integrated module is greatly improved, and furthermore, the reliability, stability and safety of the multi-field-effect transistor integrated module are ensured; meanwhile, soldering fluxes and copper base plates which are widely adopted in the traditional multi-field-effect transistor integrated module are saved, so that the material cost is reduced, the thickness of the multi-field-effect transistor integrated module is reduced, and furthermore, the space occupied by the multi-field-effect transistor integrated module is reduced.
Description
Technical field
The invention belongs to field-effect transistor technical field, be specially a kind of many field-effect transistors integration module.
Background technology
Drive field at motor, six brachium pontis of metal oxide semiconductor field effect tube (MOSFET) composition need to be connected into three phase full bridge mode for drive motors.The radiator of poly-metal deoxide semiconductor field (MOSFET) unification integrated module plays very important effect to the steady operation of whole module.But in prior art, because space in the cabinet of many MOSFET unification integrated modules is certain, in limited cabinet, the size of radiator has been limited in space to a great extent, in the situation that heat sink size remains unchanged, wants the radiating effect that improves radiator to become very difficult.
Current many MOSFET unification integrated modules, the structure extensively adopting is that deposited copper ceramic wafer is welded on copper soleplate, namely will apply copper ceramic wafer and be welded on copper soleplate under hot environment by weld tabs.The shell that applies copper ceramic wafer outside by being arranged at will apply copper ceramic wafer and compresses and it is exerted pressure, thereby copper soleplate is fixed on radiator, and the dissipation of heat that the most MOSFET unification integrated modules produce in the time of work is gone out.In this existing many MOSFET unification integrated modules, first the heat that chip produces is transmitted on copper soleplate by the scolder applying between copper ceramic wafer and copper soleplate, and then indirectly conduct heat on radiator by copper soleplate, finally go out by heat sink radiates.In heat transfer process, there is more medium (being scolder and copper soleplate), be unfavorable for the direct dissipation of heat, greatly affected the radiating effect of many MOSFET unification integrated module products, thereby reduced reliability, stability and the fail safe of product.
Summary of the invention
For the above-mentioned problems in the prior art, the object of the invention is to design provides a kind of technical scheme of many field-effect transistors integration module of good heat dissipation effect, reliability, stability and the fail safe of product are guaranteed, and reduce material cost, reduce product thickness, taken up space thereby reduced product.
Described many field-effect transistors of one integration module, comprise one group of metal oxide semiconductor field effect tube, apply copper ceramic wafer, radiator, metal oxide semiconductor field effect tube is arranged on and applies on copper ceramic wafer, it is characterized in that being equipped with heat-conducting silicone grease layer between deposited copper ceramic wafer, radiator, described heat-conducting silicone grease layer thickness is 50-150um.
Described many field-effect transistors of one integration module, is characterized in that metal oxide semiconductor field effect tube, deposited copper ceramic wafer and radiator outside are equipped with shell, and shell will apply copper ceramic wafer, radiator presses cooperation.
Described many field-effect transistors of one integration module, is characterized in that described heat-conducting silicone grease layer is evenly coated in to apply on copper ceramic wafer bottom surface, applies copper ceramic wafer and presses heat-conducting silicone grease layer and make itself and radiator contact-making surface close contact.
Described many field-effect transistors of one integration module, is characterized in that described heat-conducting silicone grease layer thickness is 80-120um.
Described many field-effect transistors of one integration module, is characterized in that described heat-conducting silicone grease layer thickness is 100-110um.
Above-mentioned many field-effect transistors of one integration module, apply between copper ceramic wafer and radiator heat-conducting silicone grease layer is set, the heat that many field-effect transistors module can be formed in application process more more directly conducts soon, reduce the medium in heat transfer process, greatly improve the radiating effect of product, thereby further guaranteed reliability, stability and the fail safe of product; Meanwhile, save the scolder and the copper soleplate that in existing many field-effect transistors module, extensively adopt, not only reduced material cost, and reduced the thickness of product, taken up space thereby reduced product.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
In figure: 1-metal oxide semiconductor field effect tube, 2-apply copper ceramic wafer, 3-radiator, 4-heat-conducting silicone grease layer.
Embodiment
Below in conjunction with Figure of description, the invention will be further described.
As shown in the figure, this many field-effect transistors integration module, comprise one group of metal oxide semiconductor field effect tube 1, apply copper ceramic wafer 2, radiator 3, metal oxide semiconductor field effect tube 1 is arranged on and applies on copper ceramic wafer 2, applies between copper ceramic wafer 2, radiator 3 and is equipped with heat-conducting silicone grease layer 4.Described heat-conducting silicone grease layer 4 thickness are 50-150um, preferably 80-120um, more preferably 100-110um.Metal oxide semiconductor field effect tube 1, deposited copper ceramic wafer 2 and radiator 3 outsides are equipped with shell, and shell applies longitudinal pressure to applying copper ceramic wafer 2, is pressed in tightly on radiator 3 thereby will apply copper ceramic wafer 2.Described heat-conducting silicone grease layer 4 is evenly coated in and applies on copper ceramic wafer 2 bottom surfaces, applies copper ceramic wafer 2 and presses heat-conducting silicone grease layer 4 and make itself and radiator 3 contact-making surface close contacts.Heat-conducting silicone grease can play good heat catalysis effect, therefore, the heat that many MOSFET integration module can be formed in application process more more directly conducts soon, reduce the medium in heat transfer process, greatly improve the radiating effect of product, thereby further guaranteed reliability, stability and the fail safe of product; And contact with radiator 3 by adopting heat-conducting silicone grease to be coated on deposited copper ceramic wafer 2, heat-conducting silicone grease can be filled due to the uneven space producing of radiator 3, make to apply copper ceramic wafer 2 tightr with contacting of radiator 3, thereby make the conduction of heat more smooth and easy, rapid; Meanwhile, save the scolder and the copper soleplate that in existing module, extensively adopt, not only reduced material cost, and reduce the thickness of module product, take up space thereby reduced product, especially, when under the definite condition of the space layout of many MOSFET integration module, effect is particularly remarkable.
Claims (5)
1. field-effect transistor integration module more than a kind, comprise one group of metal oxide semiconductor field effect tube (1), apply copper ceramic wafer (2), radiator (3), metal oxide semiconductor field effect tube (1) is arranged on and applies on copper ceramic wafer (2), it is characterized in that being equipped with heat-conducting silicone grease layer (4) between deposited copper ceramic wafer (2), radiator (3), described heat-conducting silicone grease layer (4) thickness is 50-150um.
2. many field-effect transistors of one integration module as claimed in claim 1, it is characterized in that metal oxide semiconductor field effect tube (1), deposited copper ceramic wafer (2) and radiator (3) outside are equipped with shell, shell will apply copper ceramic wafer (2), radiator (3) presses cooperation.
3. many field-effect transistors of one integration module as claimed in claim 1, it is characterized in that described heat-conducting silicone grease layer (4) is evenly coated in applies on copper ceramic wafer (2) bottom surface, applies copper ceramic wafer (2) and presses heat-conducting silicone grease layer (4) and make itself and radiator (3) contact-making surface close contact.
4. many field-effect transistors of one integration module as claimed in claim 1, is characterized in that described heat-conducting silicone grease layer (4) thickness is 80-120um.
5. many field-effect transistors of one integration module as claimed in claim 1, is characterized in that described heat-conducting silicone grease layer (4) thickness is 100-110um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410092032.9A CN103824846A (en) | 2014-03-13 | 2014-03-13 | Multi-field-effect transistor integrated module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410092032.9A CN103824846A (en) | 2014-03-13 | 2014-03-13 | Multi-field-effect transistor integrated module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103824846A true CN103824846A (en) | 2014-05-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410092032.9A Pending CN103824846A (en) | 2014-03-13 | 2014-03-13 | Multi-field-effect transistor integrated module |
Country Status (1)
| Country | Link |
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| CN (1) | CN103824846A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050184387A1 (en) * | 2004-02-25 | 2005-08-25 | Collins William D.Iii | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
| CN102881668A (en) * | 2012-10-16 | 2013-01-16 | 西安永电电气有限责任公司 | IGBT (Insulated Gate Bipolar Translator) module radiating structure |
| CN203774320U (en) * | 2014-03-13 | 2014-08-13 | 杭州明果教育咨询有限公司 | Multi-field-effect-transistor integrating module |
-
2014
- 2014-03-13 CN CN201410092032.9A patent/CN103824846A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050184387A1 (en) * | 2004-02-25 | 2005-08-25 | Collins William D.Iii | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
| CN102881668A (en) * | 2012-10-16 | 2013-01-16 | 西安永电电气有限责任公司 | IGBT (Insulated Gate Bipolar Translator) module radiating structure |
| CN203774320U (en) * | 2014-03-13 | 2014-08-13 | 杭州明果教育咨询有限公司 | Multi-field-effect-transistor integrating module |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140528 |