CN103811620B - 发光元件及其发光阵列 - Google Patents
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Abstract
本发明公开一种发光元件及其发光阵列。该发光元件包含：一发光结构；多个第一接触部彼此分离地形成在发光结构上；以及多个反射部彼此分离地形成在多个的第一接触部中。
Description
技术领域
本发明涉及一种发光元件及其发光阵列，特别是涉及一种发光结构底部具有接触部的发光元件及其发光阵列。
背景技术
发光二极管元件电流扩散的效果关系着发光二极管元件的亮度。现有技术中，一发光二极管元件的半导体层顶层上可具有一电极垫以将电流输入发光二极管元件，且也可于半导体层的顶层形成一或多个延伸于电极垫的延伸电极以促进电流分散。
然而，延伸电极的设置对于发光二极管元件的出光也有负面影响，因延伸电极为金属会吸收或阻挡发光二极管元件的光线。甚或，如果延伸电极与半导体层顶层间的接触面积不足，发光二极管元件的顺向电压可能会上升而降低电性效率。
此外，发光二极管元件可更进一步地连接于其他元件以形成一发光装置。发光二极管元件可通过具有基板的一侧连接于一次载体上，或以焊料或胶材形成于次载体与发光二极管间，以形成一发光装置。此外，次载体可还包含一电路，通过例如为一金属线的导电结构电连接于发光二极管的电极。
发明内容
为解决上述问题，本发明公开一种发光元件包含：一发光结构；多个第一接触部彼此分离地形成在发光结构上；以及多个反射部彼此分离地形成在多个的第一接触部中。
附图说明
图1A是本发明发光元件根据一第一实施例的上视图，而图1B及图1C是图1A的两不同剖面视图；
图2A及图2B是本发明发光元件的一第二实施例；
图3A及图3B是本发明发光阵列的一第三实施例；
图4是本发明灯泡的一第四实施例。
具体实施方式
参照图1A至图1C。图1A显示本发明发光元件根据一第一实施例的上视图，而图1B及图1C分别根据剖面线AA’及BB’显示图1A的两不同剖面视图。一发光元件100包含：一基板102；一发光结构112形成于基板102上；以及一绝缘接合层104将发光结构112接着至基板102。多个半导体接触部114欧姆接触于发光结构112的底部，且多个反射部115形成于多个半导体接触部114之间且接触于发光结构112的底部。另言之，多个反射部115分离地位于半导体接触部114之间，其配置包含了彼此交替的半导体接触部114及反射部115。反射部115的反射率大于半导体接触部114的反射率，且相较反射部115，半导体接触部114可较佳地欧姆接触于发光结构112。反射部115的形状可为矩形。半导体接触部114及反射部115可排列为多个群组，而每一群组可包含N个半导体接触部114及N-1个反射部115。每一群组也可被一金属接触部116所覆盖，在本实施例中，发光元件100具有两金属接触部116形成在发光结构112底部，且每一金属接触部116内嵌有三个半导体接触部114及两个反射部115。内嵌于金属接触部116中的半导体接触部114可排列为一线段，且两相邻半导体接触部114沿着线段的距离d可介于10～50微米间以容纳反射部115。具体而言，每一距离d可约30微米。金属接触部116具有一宽度w1宽于半导体接触部114具有的宽度w2，且w1对w2的比率介于1.2到1.8之间。在本实施例中，金属接触部116的宽度w1可约为6微米，且个别的半导体接触部114的宽度w2可约为4微米。
发光结构112包含一下半导体层106、一活性层108及一上半导体层110。下半导体层106具有一底面106a其也为发光结构112的底部，且半导体接触部114、反射部115、及金属接触部116直接接触于底面106a。如图1C所示，半导体接触部114、反射部115及金属接触部116共平面地在底面106a上。可形成一沟槽111以暴露部分的下半导体层106，且金属接触部116可具有一接触端122为沟槽111所暴露，且一导电通道119可填设于沟槽111中以将下半导体层106电连接至发光结构112的上表面107，且一电极113可形成在发光结构112的上表面107上以电连接于导电通道119。此外，基板102可为透明，且一反射层118可形成于基板102底部以加强出光。基板102的材料可包含绝缘材料例如为蓝宝石(Sapphire)，或导电材料例如为碳化硅(SiC)。发光结构112其上表面107、底面106a及侧壁105可更包含粗化区域。参阅图1A，一上接触部103包含金属可形成于发光结构112的一侧，上接触部103具有一电极垫103a及一延伸部分103b延伸自电极垫103a。形成有上接触部103的一侧相对于形成有半导体接触部114的一侧，如图1B所示，电极垫103a及延伸部分103b位于上表面107。上接触部103的延伸部分103b可安排成一条状。
发光结构112可形成于MOCVD内部，且可由像是磷化铟镓铝(AlGaInP)系列、氮化铟镓铝(AlGaInN)系列，及/或氧化锌(ZnO)系列所组成。活性层108可被规划为单异质结(SH)、双异质结(DH)、双面双异质(DDH)或多量子井(MQW)结构。半导体接触部114可为砷化镓(GaAs)、砷化铝镓(AlGaAs)、磷化铟镓铝(AlGaInP)、氮化镓(GaN)、氮化铟镓(InGaN)及氮化铝(AlN)，金属接触部116可为锗(Ge)、金(Au)、银(Ag)、铂(Pt)、铜(Cu)、铝(Al)、铬(Cr)及其合金。更特定地，发光结构112可为磷化铟镓铝(AlGaInP)，半导体接触部114可为锗化金(GeAu)。反射部115的材质可为银(Ag)、铂(Pt)、铝(Al)、铅(Pb)、锡(Sn)、铜(Cu)或其金属合金。
相对于连续的半导体接触部来说，非连续的半导体接触部114吸收较少由活性层108放射出的光线，且形成于半导体接触部114之间的反射部115可通过光反射加强出光。半导体接触部114的分布、内嵌于金属接触部116的反射部115、半导体接触部114与金属接触部116的宽度比率可提升发光元件100每瓦特的流明数。
参阅图2A及图2B，其显示本发明发光元件的一第二实施例。发光元件200包含：导电基板202、位于导电基板202上方的发光结构212，且发光结构212包含一下半导体层206、一活性层208与一上半导体层210。透明导电接合层204可将发光结构212附着于导电基板202。与第一实施例相似，半导体接触部214与反射部(图未显示)内嵌于金属接触部216。两个实施例的一不同点在于发光元件200为一垂直型结构，包含导电接合层204与导电基板202。导电接合层204可为金属氧化物，如ITO,AZO,IZO,YZO或ZnO。导电基板202可为透明且于底部具有一反射层218，可加强发光元件200的出光，如图2A所示，或一反射层207可形成于发光结构212底部的部分区域，如图2B所示，且反射层207与金属接触部216位于发光结构212底部的不同区域。
参照图3A，其显示本发明发光阵列的一第三实施例。发光阵列300包含：绝缘载体结构301、形成于绝缘载体结构301上方的多个发光单元306a、306b。发光单元306a或306b的半导体层与第一实施例中的发光结构相似。第一接触部312、反射部(图未显示)、金属接触部310及上接触部318的布署与安排与第一实施例中的布署与安排可为相似。绝缘载体结构301包含一具有上表面302a与下表面302b的基板302，绝缘接合层304可将发光单元306a、306b附着于基板302的上表面302a。绝缘接合层304的材质可为聚酰亚胺(polyimide)、BCB、FCB、环氧树酯(epoxy)、丙烯酸类树酯(acrylicresin)、COC、PMMA、PET、PC、聚醚酰亚胺(polyetherimide)、碳氟聚合物(fluorocarbon polymer)、硅胶(silicone resin)、玻璃、氧化铝(Al2O3)、二氧化硅(SiO2)、氧化钛(TiO2),SiNx或SOG。导线308可通过连接发光单元306a的上半导体层311与金属接触部314串联连接发光单元306a与306b，且导线308由发光单元306b的金属接触部310延伸并与发光单元306b的下半导体层206电连接，且在图3B，发光阵列可通过包含发光单元306a、发光单元306b与连接发光单元306a与发光单元306b之间的其他发光单元以串联连接，然而，发光单元也可以并联连接或反向并联连接。
参照图4，是显示本发明灯泡的一第四实施例。灯泡400包含顶盖402、透镜404、发光模块410、灯泡支持部412、散热片414、连接部416与电连接器418。发光模块410包含一承载部406及上述任一实施例的多个发光元件408。
虽然结合以上说明了本发明，然而其并非用以限制本发明的范围、实施顺序、或使用的材料与制作工艺方法。对于本发明所作的各种修饰与变更，皆不脱离本发明的精神与范围。
Claims (10)
1.一种发光元件，包含:
发光结构；
多个第一接触部，彼此分离地形成在发光结构上；
以及
多个反射部，彼此分离地形成在该些第一接触部中；
其中该些第一接触部不直接接触该些反射部。
2.如权利要求1所述的发光元件，还包含第二接触部，该第二接触部覆盖该些第一接触部与该些反射部。
3.如权利要求1所述的发光元件，其中该些第一接触部、该些反射部共平面地位于该发光结构之上。
4.如权利要求2所述的发光元件，其中该第一接触部包含半导体，且该第二接触部包含金属。
5.如权利要求2所述的发光元件，其中该第二接触部与该第一接触部的宽度比率可为1.2～1.8之间。
6.如权利要求1所述的发光元件，其中包含N个第一接触部与N-1个反射部。
7.如权利要求2所述的发光元件，其中该第二接触部安排成一条状，且两相邻第一接触部沿着该条状的距离介于10～50微米间。
8.如权利要求2所述的发光元件，该第一接触部包含砷化镓(GaAs)、砷化铝镓(AlGaAs)、磷化铟镓铝(AlGaInP)、氮化镓(GaN)、氮化铟镓(InGaN)或氮化铝(AlN)，该第二接触部包含锗(Ge)、金(Au)、铜(Cu)、铝(Al)、银(Ag)、铬(Cr)、铂(Pt)或其合金。
9.如权利要求1所述的发光元件，还包含上接触部，该上接触部位于该发光结构与该第一接触部相对的一侧。
10.一种发光阵列，包含:
绝缘载体结构，该绝缘载体结构承载多个如权利要求1所述的发光元件；以及
导线串联、并联、或反向并联该些发光元件。
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| TWD202085S (zh) * | 2018-09-04 | 2020-01-11 | 晶元光電股份有限公司 | 發光裝置 |
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| TW201733157A (zh) | 2017-09-16 |
| TWI594456B (zh) | 2017-08-01 |
| US20150311416A1 (en) | 2015-10-29 |
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| US20140124798A1 (en) | 2014-05-08 |
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