TWI628811B - 發光元件 - Google Patents
發光元件 Download PDFInfo
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- TWI628811B TWI628811B TW106121021A TW106121021A TWI628811B TW I628811 B TWI628811 B TW I628811B TW 106121021 A TW106121021 A TW 106121021A TW 106121021 A TW106121021 A TW 106121021A TW I628811 B TWI628811 B TW I628811B
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- 239000004065 semiconductor Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 20
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical group 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- -1 AlGaInP Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical class [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- MOAOBEKGMNGXJG-UHFFFAOYSA-N [Te].[Te].[Te].[Au].[Au] Chemical compound [Te].[Te].[Te].[Au].[Au] MOAOBEKGMNGXJG-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
一種發光元件，包含：一發光結構；複數第一接觸部彼此分離地形成在該發光結構上；以及複數反射部彼此分離地形成在該發光結構上，且該複數反射部包含一第一反射部及一第二反射部相鄰於該第一反射部，其中，該發光結構直接接觸於該複數第一接觸部及該複數反射部；以及一第二接觸部位於該複數第一接觸部及該複數反射部上；其中，該第一反射部具有一表面朝向該第二反射部，該表面直接接觸於該第二接觸部。
Description
本發明係關於一種發光元件，特別是一種發光結構底部具有接觸部之發光元件。
發光二極體元件電流擴散的效果關係著發光二極體元件的亮度。習知技藝中，一發光二極體元件的半導體層頂層上可具有一電極墊以將電流輸入發光二極體元件，且也可於半導體層的頂層形成一或多個延伸於電極墊之延伸電極以促進電流分散。
然而，延伸電極的設置對於發光二極體元件的出光亦有負面影響，因延伸電極為金屬會吸收或阻擋發光二極體元件之光線。甚或，如果延伸電極與半導體層頂層間的接觸面積不足，發光二極體元件的順向電壓可能會上升而降低電性效率。
此外，發光二極體元件可更進一步地連接於其他元件以形成一發光裝置。發光二極體元件可藉由具有基板的一側連接於一次載體上，或以焊料
或膠材形成於次載體與發光二極體間，以形成一發光裝置。此外，次載體可更包含一電路，透過例如為一金屬線的導電結構電性連接於發光二極體之電極。
一種發光元件，包含：一發光結構；複數第一接觸部彼此分離地形成在該發光結構上；複數反射部彼此分離地形成在該發光結構上，且該複數反射部包含一第一反射部及一第二反射部相鄰於該第一反射部，其中，該發光結構直接接觸於該複數第一接觸部及該複數反射部；以及一第二接觸部位於該複數第一接觸部及該複數反射部上；其中，該第一反射部具有一表面朝向該第二反射部，該表面直接接觸於該第二接觸部。
100‧‧‧發光元件
102‧‧‧基板
103‧‧‧上接觸部
103a‧‧‧電極墊
103b‧‧‧延伸部分
104‧‧‧絕緣接合層
105‧‧‧側壁
106‧‧‧下半導體層
106a‧‧‧底面
107‧‧‧上表面
108‧‧‧活性層
110‧‧‧上半導體層
111‧‧‧溝槽
112‧‧‧發光結構
113‧‧‧電極
114‧‧‧半導體接觸部
115‧‧‧反射部
116‧‧‧金屬接觸部
118‧‧‧反射層
119‧‧‧一導電通道
122‧‧‧接觸端
200‧‧‧發光元件
202‧‧‧導電基板
204‧‧‧導電接合層
206‧‧‧下半導體層
207‧‧‧反射層
208‧‧‧活性層
210‧‧‧上半導體層
212‧‧‧發光結構
214‧‧‧半導體接觸部
216‧‧‧金屬接觸部
218‧‧‧反射層
300‧‧‧發光陣列
301‧‧‧絕緣載體結構
302‧‧‧基板
302a‧‧‧上表面
302b‧‧‧下表面
304‧‧‧絕緣接合層
306a、306b‧‧‧發光單元
308‧‧‧導線
310‧‧‧金屬接觸部
311‧‧‧上半導體層
312‧‧‧第一接觸部
314‧‧‧金屬接觸部
318‧‧‧上接觸部
400‧‧‧燈泡
402‧‧‧頂蓋
404‧‧‧透鏡
406‧‧‧承載部
408‧‧‧發光元件
410‧‧‧發光模組
412‧‧‧燈泡支持部
414‧‧‧散熱片
416‧‧‧連接部
418‧‧‧電性連接器
第1A圖係顯示本發明發光元件根據一第一實施例之上視圖，而第1B及第1C圖係顯示第1A圖之兩不同剖面視圖。
第2A及第2B圖係顯示本發明發光元件之一第二實施例。
第3A及第3B圖係顯示本發明發光陣列之一第三實施例。
第4圖係顯示本發明燈泡之一第四實施例。
參照第1A圖至第1C圖。第1A圖顯示本發明發光元件根據一第一
實施例之上視圖，而第1B及第1C圖分別根據剖面線AA’及BB’顯示第1A圖之兩不同剖面視圖。一發光元件100包含：一基板102；一發光結構112形成於基板102上；以及一絕緣接合層104將發光結構112接著至基板102。複數半導體接觸部114歐姆接觸於發光結構112之底部，且複數反射部115形成於複數半導體接觸部114之間且接觸於發光結構112之底部。另言之，複數反射部115分離地位於半導體接觸部114之間，其配置包含了彼此交替的半導體接觸部114及反射部115。反射部115的反射率係大於半導體接觸部114的反射率，且相較反射部115，半導體接觸部114可較佳地歐姆接觸於發光結構112。反射部115的形狀可為矩形。半導體接觸部114及反射部115可排列為複數群組，而每一群組可包含N個半導體接觸部114及N-1個反射部115。每一群組亦可被一金屬接觸部116所覆蓋，在本實施例中，發光元件100具有兩金屬接觸部116形成在發光結構112底部，且每一金屬接觸部116內嵌有三個半導體接觸部114及兩個反射部115。內嵌於金屬接觸部116中的半導體接觸部114可排列為一線段，且兩相鄰半導體接觸部114沿著線段的距離d可介於10~50微米間以容納反射部115。具體而言，每一距離d可約30微米。金屬接觸部116具有一寬度w1寬於半導體接觸部114具有的寬度w2，且w1對w2之比率介於1.2到1.8之間。在本實施例中，金屬接觸部116的寬度w1可約為6微米，且個別的半導體接觸部114的寬度w2可約為4微米。
發光結構112包含一下半導體層106、一活性層108及一上半導體層110。下半導體層106具有一底面106a其亦為發光結構112的底部，且半導體接觸部114、反射部115、及金屬接觸部116直接接觸於底面106a。如第1C圖所示，
半導體接觸部114、反射部115及金屬接觸部116係共平面地在底面106a上。可形成一溝槽111以暴露部分的下半導體層106，且金屬接觸部116可具有一接觸端122為溝槽111所暴露，且一導電通道119可填設於溝槽111中以將下半導體層106電性連接至發光結構112的上表面107，且一電極113可形成在發光結構112的上表面107上以電性連接於導電通道119。此外，基板102可為透明，且一反射層118可形成於基板102底部以加強出光。基板102的材料可包含絕緣材料例如為藍寶石(Sapphire)，或導電材料例如為碳化矽(SiC)。發光結構112其上表面107、底面106a及側壁105可更包含粗化區域。參閱第1A圖，一上接觸部103包含金屬可形成於發光結構112之一側，上接觸部103具有一電極墊103a及一延伸部分103b延伸自電極墊103a。形成有上接觸部103之一側係相對於形成有半導體接觸部114之一側，如第1B圖所示，電極墊103a及延伸部分103b係位於上表面107。上接觸部103的延伸部分103b可安排成一條狀。
發光結構112可形成於MOCVD內部，且可由像是磷化銦鎵鋁(AlGaInP)系列、氮化銦鎵鋁(AlGaInN)系列，及/或氧化鋅(ZnO)系列所組成。活性層108可被規劃為單異質結(SH)、雙異質結(DH)、雙面雙異質(DDH)或多量子井(MQW)結構。半導體接觸部114可為砷化鎵(GaAs)、砷化鋁鎵(AlGaAs)、磷化銦鎵鋁(AlGaInP)、氮化鎵(GaN)、氮化銦鎵(InGaN)及氮化鋁(AlN)，金屬接觸部116可為鍺(Ge)、金(Au)、銀(Ag)、鉑(Pt)、銅(Cu)、鋁(Al)、鉻(Cr)及其合金。更特定地，發光結構112可為磷化銦鎵鋁(AlGaInP)，半導體接觸部114可為鍺化金(GeAu)。反射部115的材質可為銀(Ag)、鉑(Pt)、鋁(Al)、
鉛(Pb)、錫(Sn)、銅(Cu)或其金屬合金。
相對於連續的半導體接觸部來說，非連續的半導體接觸部114吸收較少由活性層108放射出的光線，且形成於半導體接觸部114之間的反射部115可藉由光反射加強出光。半導體接觸部114的分佈、內嵌於金屬接觸部116之反射部115、半導體接觸部114與金屬接觸部116之寬度比率可提升發光元件100每瓦特的流明數。
參閱第2A及2B圖，係顯示本發明發光元件之一第二實施例。發光元件200包含：導電基板202、位於導電基板202上方的發光結構212，且發光結構212包含一下半導體層206、一活性層208與一上半導體層210。透明導電接合層204可將發光結構212附著於導電基板202。與第一實施例相似，半導體接觸部214與反射部(圖未顯示)內嵌於金屬接觸部216。兩個實施例的一不同點在於發光元件200為一垂直型結構，包含導電接合層204與導電基板202。導電接合層204可為金屬氧化物，如ITO,AZO,IZO,YZO或ZnO。導電基板202可為透明且於底部具有一反射層218，可加強發光元件200的出光，如第2A圖所示，或一反射層207可形成於發光結構212底部之部分區域，如第2B圖所示，且反射層207與金屬接觸部216位於發光結構212底部之不同區域。
參照第3A圖，係顯示本發明發光陣列之一第三實施例。發光陣列300包含：絕緣載體結構301、形成於絕緣載體結構301上方的複數個發光單元306a、306b。發光單元306a或306b的半導體層與第一實施例中的發光結構相似。第一接觸部312、反射部(圖未顯示)、金屬接觸部310及上接觸部318的佈署與安
排與第一實施例中的佈署與安排可為相似。絕緣載體結構301包含一具有上表面302a與下表面302b的基板302，絕緣接合層304可將發光單元306a、306b附著於基板302之上表面302a。絕緣接合層304的材質可為聚醯亞胺(polyimide)、BCB、FCB、環氧樹酯(epoxy)、丙烯酸類樹酯(acrylic resin)、COC、PMMA、PET、PC、聚醚醯亞胺(polyetherimide)、碳氟聚合物(fluorocarbon polymer)、矽膠(silicone resin)、玻璃、氧化鋁(Al2O3)、二氧化矽(SiO2)、氧化鈦(TiO2),SiNx或SOG。導線308可藉由連接發光單元306a之上半導體層311與金屬接觸部314串聯連接發光單元306a與306b，且導線308由發光單元306b之金屬接觸部310延伸並與發光單元306b之下半導體層206電性連接，且在第3B圖，發光陣列可藉由包含發光單元306a、發光單元306b與連接發光單元306a與發光單元306b之間的其他發光單元以串聯連接，然而，發光單元也可以並聯連接或反向並聯連接。
參照第4圖，係顯示本發明燈泡之一第四實施例。燈泡400包含頂蓋402、透鏡404、發光模組410、燈泡支持部412、散熱片414、連接部416與電性連接器418。發光模組410包含一承載部406及上述任一實施例之複數個發光元件408。
雖然本發明已說明如上，然其並非用以限制本發明之範圍、實施順序、或使用之材料與製程方法。對於本發明所作之各種修飾與變更，皆不脫本發明之精神與範圍。
Claims (10)
- 一種發光元件，包含：一發光結構；複數第一接觸部彼此分離地形成在該發光結構上；複數反射部彼此分離地形成在該發光結構上，且該複數反射部包含一第一反射部及一第二反射部相鄰於該第一反射部，其中，該發光結構直接接觸於該複數第一接觸部及該複數反射部；以及一第二接觸部位於該複數第一接觸部及該複數反射部上；其中，該第一反射部具有一表面朝向該第二反射部，該表面直接接觸於該第二接觸部。
- 如申請專利範圍第1項所述之發光元件，該發光元件具有一邊緣，該第二接觸部具有一接觸端位於該邊緣內。
- 如申請專利範圍第1項所述之發光元件，其中該第一接觸部包含半導體。
- 如申請專利範圍第1項所述之發光元件，更包含一基板與一導電接合層，該導電接合層位於該發光結構與該基板之間。
- 如申請專利範圍第4項所述之發光元件，其中該導電接合層為金屬氧化物。
- 如申請專利範圍第4項所述之發光元件，更包含一反射層，該反射層形成於該發光結構及該基板之間。
- 如申請專利範圍第1項所述之發光元件，更包含一上接觸部，該上接觸部與該第一接觸部分別形成於該發光結構的相反兩側。
- 如申請專利範圍第7項所述之發光元件，其中該上接觸部與該複數反射部錯位。
- 如申請專利範圍第1項所述之發光元件，其中該複數第一接觸部各具有一第一寬度，該第二接觸部具有一第二寬度大於該第一寬度。
- 一種發光元件，包含：一發光結構；複數第一接觸部彼此分離地形成在該發光結構上；以及複數反射部彼此分離地形成在該發光結構上；其中，由剖面觀之，該複數半導體接觸部的數量為N個，該複數反射部的數量為N-1個。
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| CN106784223B (zh) * | 2016-12-22 | 2019-05-14 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
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