CN103802224A - Squaring method for silicon ingot - Google Patents
Squaring method for silicon ingot Download PDFInfo
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- CN103802224A CN103802224A CN201410086869.2A CN201410086869A CN103802224A CN 103802224 A CN103802224 A CN 103802224A CN 201410086869 A CN201410086869 A CN 201410086869A CN 103802224 A CN103802224 A CN 103802224A
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- Prior art keywords
- silicon ingot
- evolution
- barrier film
- holder
- foamed glue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 102
- 239000010703 silicon Substances 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 48
- 230000008569 process Effects 0.000 claims abstract description 18
- 238000005520 cutting process Methods 0.000 claims abstract description 14
- 238000005187 foaming Methods 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims description 42
- 230000004888 barrier function Effects 0.000 claims description 37
- 239000000126 substance Substances 0.000 claims description 34
- 238000009412 basement excavation Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 3
- 239000003755 preservative agent Substances 0.000 claims description 3
- 230000002335 preservative effect Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000005507 spraying Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 abstract 4
- 229920006327 polystyrene foam Polymers 0.000 abstract 4
- 239000004484 Briquette Substances 0.000 description 39
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000011435 rock Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 208000034189 Sclerosis Diseases 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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Abstract
The invention provides a squaring method for a silicon ingot, which comprises the following steps: laying an isolating membrane on one surface of a crystal support, which is provided with gaps, wherein the isolating membrane is used for isolating the crystal support from the silicon ingot to be squared; spraying polystyrene foam on the isolating membrane and filling the polystyrene foam into the gaps in the foaming process; placing the silicon ingot on the crystal support and enabling the polystyrene foam to be adhered to the silicon ingot; placing the crystal support supporting the silicon ingot in a cutting chamber of a squarer to carry out squaring on the silicon ingot. In the squaring method for the silicon ingot, which is provided by the invention, when the silicon ingot is to move, the hardened polystyrene foam filled into the gaps can keep the silicon ingot not moving by a relative acting force with the side walls of the gaps so as to achieve an effect of fixing the silicon ingot. The silicon ingot is isolated from the crystal support by the isolating membrane, and thus, after squaring on the silicon ingot is completed, an operator can very easily take down the silicon ingot from the crystal support, so that the operation difficulty in the process of taking down the silicon ingot from the crystal support after squaring is greatly reduced and production efficiency is improved.
Description
Technical field
The present invention relates to photovoltaic technology field, more particularly, relate to a kind of evolution method of silicon ingot.
Background technology
Along with the reach of science, the progress of technology, countries in the world are more and more paid attention to energy-saving and emission-reduction and environmental protection aspect.Photovoltaic industry, as the important component part in energy-saving and emission-reduction project, obtains swift and violent development.The industrial chain that photovoltaic industry is complete is: between silicon material → pouring hall → silicon chip workshop → battery car → and assembly workshop → application system → energy-storage system.
Silicon chip is as making one of requisite raw material of solar battery sheet, its manufacturing process is roughly: the long crystalline substance of silicon material by purification and after processing is also cast silicon ingot, again silicon ingot is cut into the silico briquette being of the required size, then by silico briquette section, then through obtaining silicon chip after a series of processing.Wherein, the process that silicon ingot is cut into the silico briquette being of the required size is called evolution operation.
In evolution process, first need that silicon ingot foamed glue is bonded in to brilliant holder upper, utilize brilliant holder protection silicon ingot, and silicon ingot is carried out to stable position, then the crystalline substance holder that is stained with silicon ingot is placed in to the cutting chamber of excavation machine, silicon ingot is carried out to evolution.
In prior art; conventionally silicon ingot directly can be utilized foamed glue to be adhered in brilliant holder; this way causes after evolution completes; between the silico briquette of well cutting and crystalline substance holder because the bonding effect of foamed glue is difficult to separate; in the process that silico briquette is taken off from crystalline substance holder, need to consume during compared with farm labourer and manpower; employee's operation easier is larger, affects production efficiency.
Summary of the invention
The invention provides a kind of evolution method of silicon ingot, to reduce the operation easier in the process of after evolution, silico briquette being taken off from crystalline substance holder, enhance productivity.
For achieving the above object, the invention provides following technical scheme:
An evolution method for silicon ingot, comprising: in the apertured one side of crystalline substance holder tool, lay barrier film, described barrier film is for isolating described brilliant holder and the silicon ingot for the treatment of evolution; On described barrier film, spray foamed glue, described foamed glue is filled in described gap in foaming process; Described silicon ingot is placed in to described brilliant holder above, makes the bonding described silicon ingot of described foamed glue; There is the crystalline substance holder of described silicon ingot to be placed in the cutting chamber of excavation machine support, described silicon ingot is carried out to evolution.
Preferably, the thickness of described barrier film is 50 μ m～500 μ m.
Preferably, the thickness of described barrier film is 100 μ m.
Preferably, described barrier film is plastic sheeting or rubber film.
Preferably, described barrier film is preservative film.
The number of plies of the barrier film of preferably, laying in described brilliant holder is at least one deck.
Preferably, describedly described silicon ingot is carried out to evolution be specially: adopt wire sawing technology to carry out evolution to described silicon ingot.
Preferably, described silicon ingot is polycrystal silicon ingot.
Compared with prior art, technical scheme provided by the present invention at least has the following advantages:
In the evolution method of silicon ingot provided by the present invention, before silicon ingot being placed in brilliant holder, first in the apertured one side of crystalline substance holder tool, lay barrier film, then on barrier film, spray foamed glue, afterwards silicon ingot is placed in to brilliant holder above, make the bonding silicon ingot of foamed glue.Foamed glue is in foaming process, and volume constantly expands, and makes barrier film generation deformation, thereby foamed glue can be packed in the gap of brilliant holder, after foamed glue sclerosis, and the foamed glue shutoff that can be hardened in the gap in brilliant holder.In the time that silicon ingot will be subjected to displacement, be filled in the foamed glue that hardens in gap can by and gap sidewall between relativity force retaining silicon ingot be not subjected to displacement, reach the effect of fixing silicon ingot, thereby guaranteed completing smoothly of evolution.Owing to isolating by barrier film between silicon ingot and brilliant holder, therefore after silicon ingot evolution completes, operating personnel can very easyly take off silico briquette from crystalline substance holder, avoid directly foamed glue being injected in the problem that the brilliant holder silico briquette that above bonding silicon ingot causes is difficult to take off, visible, silicon ingot evolution method provided by the present invention can reduce the operation easier in the process of after evolution, silico briquette being taken off from crystalline substance holder greatly, enhances productivity.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The process sequence diagram of the evolution method of the silicon ingot that Fig. 1～Fig. 3 provides for the embodiment of the present invention.
The specific embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
A lot of details are set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, and therefore the present invention is not subject to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, in the time that the embodiment of the present invention is described in detail in detail; for ease of explanation; the profile of indication device structure can be disobeyed general ratio and be done local amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.In addition in actual fabrication, should comprise, the three-dimensional space of length, width and the degree of depth.
The present embodiment provides a kind of evolution method of silicon ingot, and the method comprises the following steps:
Step S1: have in crystalline substance holder 101 in the one side in gap 102 and lay barrier film 103, described barrier film 103 is for by crystalline substance holder 101 and the silicon ingot isolation (as shown in Figure 1) for the treatment of evolution;
For the ease of foamed glue when foaming in subsequent step, can make smoothly barrier film 103 that deformation occurs, and be packed in the gap 102 of brilliant holder 101, barrier film 103 preferably thinner thickness, there is certain flexible film.Concrete, in the present embodiment, the thickness of barrier film 103 is preferably 50 μ m～500 μ m, comprises endpoint value, more preferably 100 μ m.
Concrete material to barrier film 103 in the present embodiment does not limit, and barrier film 103 preferably can be plastic sheeting or rubber film, more preferably preservative film.
The number of plies of the barrier film of laying in crystalline substance holder 101 is at least one deck, is more preferably one deck.
It should be noted that, brilliant holder 101 is frocks that silicon ingot excavation machine carries, and has a lot of and have the gap 102 of certain width on it, and brilliant holder 101 is not run through in described gap 102, only at an opening of crystalline substance holder 101; Brilliant holder 101, for the process support to silicon ingot evolution and fixing silicon ingot, keeps silicon ingot not to be subjected to displacement.
Step S2: spray foamed glue 104 on barrier film 103, foamed glue 104 is filled in (as shown in Figure 2) in gap 102 in foaming process;
Foamed glue is a kind of glue with foam characteristics and bonding characteristic, in the time that foamed glue sprays from inhalator jar, the foamed glue of foam shape can expand rapidly, and forms foam with the moisture generation curing reaction in air or the matrix that touches, and foamed glue can solidify gradually in foaming process.
In the present embodiment, foamed glue 104 injected on barrier film 103 after, start foaming, volume expands rapidly, on gap 102 due to crystalline substance holder 101, be coated with barrier film, therefore the foamed glue expanding can force the barrier film generation deformation in this region, and final foamed glue is packed in gap 102, but between the foamed glue in gap 102 and the sidewall in gap 102 still by deformation barrier film isolate.After foaming finishes, foamed glue 104 solidifies, and part or all of gap 102 blocked.
Step S3: silicon ingot 105 is placed in brilliant holder 101, makes the bonding silicon ingot 105(of foamed glue 104 as shown in Figure 3);
In the present embodiment, silicon ingot 105 is preferably polycrystal silicon ingot.
A part for foamed glue 104 is filled in gap 102, and another part (being positioned at the part of brilliant holder 101 tops) is for bonding silicon ingot 105.
Step S4: have the crystalline substance holder 101 of silicon ingot 105 to be placed in the cutting chamber of excavation machine support, silicon ingot 105 is carried out to evolution.
In the present embodiment, 105 silicon ingots are carried out to evolution and preferably can adopt wire sawing technology.
Take the most much higher crystal silicon solar batteries of current industrialization level as example, the size of the silico briquette that in the present embodiment, evolution obtains preferably can be 156mm × 156mm × 250mm.
After evolution finishes, the silico briquette that cutting need be obtained separates from crystalline substance holder 101.In the present embodiment, due to spraying before foamed glue 104, in crystalline substance holder 101, lay barrier film 103 in advance, thereby set up a separation relation between foamed glue 104 and brilliant holder 101, made operating personnel can be very easy to silico briquette to take off from crystalline substance holder 101.And in prior art, because foamed glue directly contacts also bondingly with brilliant holder, therefore operating personnel take off the silico briquette of well cutting to waste time and energy.Visible, thus the difficulty when evolution method of the silicon ingot that the present embodiment provides can reduce upper separation of brilliant silico briquette holder is enhanced productivity.
And due to bonding more firm of silicon ingot in prior art and brilliant holder, therefore operating personnel are in the process that silico briquette is taken off, need the silico briquette that rocks among a small circle, very easily there is the collision between silico briquette in this, and then causes silico briquette to collapse limit, cause silico briquette qualification rate to decline, cause the waste of cost.The method providing due to the present embodiment can make operating personnel very easily take off silico briquette, operating personnel in the process of taking off without rocking among a small circle silico briquette, therefore also just avoid the limit problem that collapses that between silico briquette, collision causes, thereby improved the qualification rate of silico briquette, saved cost.
In addition, if operating personnel can easier be taken off the silico briquette of well cutting from crystalline substance holder, take first in crystalline substance holder, to arrange one deck sponge, on sponge, spray again foamed glue bonding silicon ingot, then carry out the method for silicon ingot evolution, but this method due between sponge and brilliant holder without sticky object, therefore can cause silicon ingot relatively unstable in crystalline substance holder, easily in cutting process, be moved, cause silico briquette quality problems (as: silico briquette off-dimension); And in actual production, after silico briquette evolution finishes, support is had the crystalline substance holder of the silico briquette of well cutting take out from excavation machine, be transported to operative position, then operating personnel take off silico briquette from crystalline substance holder by silico briquette, in above-mentioned transportation, owing to being isolated by sponge between silico briquette and brilliant holder, therefore between silico briquette and brilliant holder, there is no bonding force, the factor such as the rocking and can cause silico briquette to rock of the out-of-flatness on ground, transporting equipment, cause mutually colliding with between silico briquette, very easily cause the limit that collapses of silico briquette; And the price for the sponge that isolates is comparatively expensive, is unfavorable for controlled working cost.
Compared with the above-mentioned method that sponge was set before spraying foamed glue in crystalline substance holder, the evolution method of the silicon ingot that the present embodiment provides, have flexible by employing, the barrier film of thinner thickness covers brilliant holder, make foamed glue can in the time expanding, force barrier film generation deformation, and then be filled in the gap of brilliant holder, increase the interaction force between silicon ingot in silicon ingot cutting process and brilliant holder, barrier film is also by crystalline substance holder and foamed glue isolation simultaneously, thereby both guaranteed that silicon ingot was not subjected to displacement, what make again that the silico briquette of well cutting can be time saving and energy saving separates from crystalline substance holder, avoid silico briquette in the time of transportation, to rock the limit problem that collapses of colliding with and causing, and avoid the sponge that use cost is more expensive.
The beneficial effect of method the present embodiment being provided below by concrete correction data describes.
Table 1
In upper table, cited data are take weight as 600kg, highly for 375mm silicon ingot is example gained.Visible, the evolution method of the silicon ingot that the present embodiment provides is with respect to the method for spraying foamed glue after directly spraying foamed glue and in crystalline substance holder, sponge is set in crystalline substance holder, can greatly shorten the silico briquette of well cutting is taken off to the consumed time from crystalline substance holder, thereby improve production efficiency, effectively alleviated the limit problem that collapses of silico briquette simultaneously.
Although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (8)
1. an evolution method for silicon ingot, is characterized in that, comprising:
In the apertured one side of crystalline substance holder tool, lay barrier film, described barrier film is for isolating described brilliant holder and the silicon ingot for the treatment of evolution;
On described barrier film, spray foamed glue, described foamed glue is filled in described gap in foaming process;
Described silicon ingot is placed in to described brilliant holder above, makes the bonding described silicon ingot of described foamed glue;
There is the crystalline substance holder of described silicon ingot to be placed in the cutting chamber of excavation machine support, described silicon ingot is carried out to evolution.
2. the evolution method of silicon ingot according to claim 1, is characterized in that, the thickness of described barrier film is 50 μ m～500 μ m.
3. the evolution method of silicon ingot according to claim 2, is characterized in that, the thickness of described barrier film is 100 μ m.
4. according to the evolution method of the silicon ingot described in claim 1～3 any one, it is characterized in that, described barrier film is plastic sheeting or rubber film.
5. the evolution method of silicon ingot according to claim 4, is characterized in that, described barrier film is preservative film.
6. the evolution method of silicon ingot according to claim 1, is characterized in that, the number of plies of the barrier film of laying in described brilliant holder is at least one deck.
7. the evolution method of silicon ingot according to claim 1, is characterized in that, describedly described silicon ingot is carried out to evolution is specially: adopt wire sawing technology to carry out evolution to described silicon ingot.
8. the evolution method of silicon ingot according to claim 1, is characterized in that, described silicon ingot is polycrystal silicon ingot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410086869.2A CN103802224B (en) | 2014-03-11 | 2014-03-11 | The evolution method of silicon ingot |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410086869.2A CN103802224B (en) | 2014-03-11 | 2014-03-11 | The evolution method of silicon ingot |
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| Publication Number | Publication Date |
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| CN103802224A true CN103802224A (en) | 2014-05-21 |
| CN103802224B CN103802224B (en) | 2015-11-11 |
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016141521A1 (en) * | 2015-03-07 | 2016-09-15 | 国电兆晶光电科技江苏有限公司 | Adjustable positioning and bonding device for correct bonding of polycrystalline master ingot squaring and application method thereof |
| CN107116706A (en) * | 2017-04-20 | 2017-09-01 | 江西赛维Ldk太阳能高科技有限公司 | A kind of adhesive means of crystalline silicon |
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| US20120313231A1 (en) * | 2011-06-09 | 2012-12-13 | National Semiconductor Corporation | Method and apparatus for dicing die attach film on a semiconductor wafer |
| CN103434031A (en) * | 2013-07-19 | 2013-12-11 | 江苏美科硅能源有限公司 | Method for cutting silicon ingot |
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2014
- 2014-03-11 CN CN201410086869.2A patent/CN103802224B/en not_active Expired - Fee Related
Patent Citations (7)
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| CN101973074A (en) * | 2010-08-26 | 2011-02-16 | 常州亿晶光电科技有限公司 | Silicon rod glue joint machine with single clamping bracket |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016141521A1 (en) * | 2015-03-07 | 2016-09-15 | 国电兆晶光电科技江苏有限公司 | Adjustable positioning and bonding device for correct bonding of polycrystalline master ingot squaring and application method thereof |
| CN107116706A (en) * | 2017-04-20 | 2017-09-01 | 江西赛维Ldk太阳能高科技有限公司 | A kind of adhesive means of crystalline silicon |
| CN107116706B (en) * | 2017-04-20 | 2019-08-16 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of adhesive means of crystalline silicon |
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