CN203004087U - Crystal bar cutting filler strip - Google Patents
Crystal bar cutting filler strip Download PDFInfo
- Publication number
- CN203004087U CN203004087U CN 201220745375 CN201220745375U CN203004087U CN 203004087 U CN203004087 U CN 203004087U CN 201220745375 CN201220745375 CN 201220745375 CN 201220745375 U CN201220745375 U CN 201220745375U CN 203004087 U CN203004087 U CN 203004087U
- Authority
- CN
- China
- Prior art keywords
- filler strip
- crystal bar
- bar cutting
- lag
- cutting filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The utility model provides a crystal bar cutting filler strip. The crystal bar cutting filler strip comprises a filler strip substrate, wherein a U-shaped groove is formed in the filler strip substrate. By structure improvement, a phenomenon of wafer fragmenting caused by wafer falling during a crystal bar cutting process can be effectively avoided; and the crystal bar cutting filler strip is simple and reasonable in structure and wide in specification adaptation range, the machining accuracy and the quality can be effectively guaranteed; and the crystal bar cutting filler strip is made from a resin material, low in production cost and good in using effect.
Description
Technical field
The utility model relates to a kind of sapphire and silicon crystal bar adds the aid that uses man-hour, specifically refers to a kind of crystal bar cutting filler strip.
Background technology
In sapphire and silicon crystal bar are processed into the process of wafer, need the operation through accurate cutting, in cutting process, need to use the cutting filler strip.Existing cutting filler strip mostly is glass material, and is planar structure, is about to the phenomenon that wafer comes off easily occur when complete at the crystal bar cutting process, causes fragment; And when using this class plate glass cutting filler strip, when crystal bar itself is pasted, the use glue is had relatively high expectations, and cost is higher, and the scope of application has significant limitation.
The utility model content
For the deficiency that prior art exists, technical problem to be solved in the utility model is, a kind of crystal bar cutting filler strip is provided, and avoids wafer to come off, cause the appearance of fragment phenomenon by improving structure.
For solving the problems of the technologies described above, technical solution adopted in the utility model is, a kind of crystal bar cutting filler strip, and it comprises the filler strip substrate, on the filler strip substrate, U-lag is set.
Above-mentioned crystal bar cutting filler strip, its filler strip substrate shape is cuboid.
Above-mentioned crystal bar cutting filler strip, the flatness of its filler strip substrate bottom surface is 20um.
Above-mentioned crystal bar cutting filler strip, the flatness of the median plane of its U-lag is 20um.
Above-mentioned crystal bar cutting filler strip, the two side height of its U-lag is 10mm.
Above-mentioned crystal bar cutting filler strip, the material of its filler strip substrate and U-lag all adopts resin.
The utlity model has following advantage and useful technique effect:
1, crystal bar cutting mat strip adoption cuboid of the present utility model coordinates the U-lag structure, can prevent effectively that the wafer that occurs in the crystal bar cutting process from coming off, causing the appearance of fragment phenomenon.
2, crystal bar cutting filler strip of the present utility model is simple for structure rationally, specification accommodation is large, can effectively guarantee machining accuracy and quality.
3, crystal bar cutting mat strip adoption resin material of the present utility model, production cost is low, and result of use is good.
Description of drawings
Fig. 1 is structural representation of the present utility model;
In above-mentioned figure:
1-filler strip substrate; 2-U shape groove; The 3-median plane; The 4-sidewall.
The specific embodiment
A kind of crystal bar cutting filler strip of the present embodiment, it comprises filler strip substrate 1, and U-lag 2 is set on filler strip substrate 1; Filler strip substrate 1 is shaped as cuboid; The flatness of filler strip substrate 1 bottom surface is 20um; The flatness of the median plane 3 of U-lag 2 is 20um; The two side 4 of U-lag 2 is highly 10mm; The material of its filler strip substrate 1 and U-lag 2 all adopts resin.
The above, only to preferred embodiment of the present utility model, be not to be that the utility model is done other forms of restriction, any those skilled in the art may utilize the technology contents of above-mentioned announcement to be changed or be modified as the equivalent embodiment of equivalent variations.But every the utility model scheme content that do not break away to any simple modification made for any of the above embodiments, equivalent variations and remodeling, still belongs to protection domain of the present utility model according to technical spirit of the present utility model.
Claims (6)
1. a crystal bar cuts filler strip, and it is characterized in that: it comprises the filler strip substrate, on the filler strip substrate, U-lag is set.
2. crystal bar according to claim 1 cuts filler strip, and it is characterized in that: described filler strip substrate shape is cuboid.
3. crystal bar according to claim 2 cutting filler strip is characterized in that: the flatness of described filler strip substrate bottom surface is 20um.
4. crystal bar according to claim 1 cuts filler strip, and it is characterized in that: the flatness of the median plane of described U-lag is 20um.
5. according to claim 1 or 4 described crystal bars cut filler strips, and it is characterized in that: the two side height of described U-lag is 10mm.
6. according to claim 1 or 4 described crystal bars cut filler strips, and it is characterized in that: the material of filler strip substrate and U-lag all adopts resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220745375 CN203004087U (en) | 2012-12-29 | 2012-12-29 | Crystal bar cutting filler strip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220745375 CN203004087U (en) | 2012-12-29 | 2012-12-29 | Crystal bar cutting filler strip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203004087U true CN203004087U (en) | 2013-06-19 |
Family
ID=48595718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220745375 Expired - Fee Related CN203004087U (en) | 2012-12-29 | 2012-12-29 | Crystal bar cutting filler strip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203004087U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104309018A (en) * | 2014-11-17 | 2015-01-28 | 天津市环欧半导体材料技术有限公司 | Resin streak structure for cutting silicon slices |
| CN110370479A (en) * | 2019-07-15 | 2019-10-25 | 上海新昇半导体科技有限公司 | A kind of crystal bar cutter device and method |
-
2012
- 2012-12-29 CN CN 201220745375 patent/CN203004087U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104309018A (en) * | 2014-11-17 | 2015-01-28 | 天津市环欧半导体材料技术有限公司 | Resin streak structure for cutting silicon slices |
| CN110370479A (en) * | 2019-07-15 | 2019-10-25 | 上海新昇半导体科技有限公司 | A kind of crystal bar cutter device and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180612 Address after: 221300 Pizhou Economic Development Zone, Pizhou, Jiangsu, north of Ring Road North, east of Hongqi Road. Patentee after: Jiangsu Li Long Semiconductor Technology Co., Ltd. Address before: 266114 Shandong Qingdao high tech Industrial Development Zone - Red Island (No. 1) Patentee before: Qingdao iStarWafer Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130619 Termination date: 20191229 |