CN103794495B - 一种基于石墨烯场效应晶体管的制备方法 - Google Patents
一种基于石墨烯场效应晶体管的制备方法 Download PDFInfo
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- CN103794495B CN103794495B CN201410052321.6A CN201410052321A CN103794495B CN 103794495 B CN103794495 B CN 103794495B CN 201410052321 A CN201410052321 A CN 201410052321A CN 103794495 B CN103794495 B CN 103794495B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 95
- 230000005669 field effect Effects 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 239000000377 silicon dioxide Substances 0.000 claims description 26
- 238000010884 ion-beam technique Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
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- 229910052681 coesite Inorganic materials 0.000 claims description 15
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- 238000004528 spin coating Methods 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 150000001336 alkenes Chemical class 0.000 claims description 4
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- 238000001020 plasma etching Methods 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000013461 design Methods 0.000 claims description 2
- 239000012153 distilled water Substances 0.000 claims description 2
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- 239000010703 silicon Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
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- 238000000137 annealing Methods 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
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- JKLYZOGJWVAIQS-UHFFFAOYSA-N 2,3,5,6-tetrafluorocyclohexa-2,5-diene-1,4-dione Chemical compound FC1=C(F)C(=O)C(F)=C(F)C1=O JKLYZOGJWVAIQS-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
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- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002353 field-effect transistor method Methods 0.000 description 1
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- 238000012544 monitoring process Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229950000845 politef Drugs 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
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CN201410052321.6A CN103794495B (zh) | 2014-02-17 | 2014-02-17 | 一种基于石墨烯场效应晶体管的制备方法 |
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CN201410052321.6A CN103794495B (zh) | 2014-02-17 | 2014-02-17 | 一种基于石墨烯场效应晶体管的制备方法 |
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CN103794495A CN103794495A (zh) | 2014-05-14 |
CN103794495B true CN103794495B (zh) | 2016-11-23 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104392945A (zh) * | 2014-10-31 | 2015-03-04 | 北京工业大学 | 一种基于场效应估算cvd方法生长在铜箔上的石墨烯迁移率的方法 |
CN107039245B (zh) * | 2017-04-20 | 2020-01-21 | 中国科学院微电子研究所 | 提高氧化镓材料导热性的方法 |
CN107768251A (zh) * | 2017-10-17 | 2018-03-06 | 江苏大学 | 一种基于鼓泡法的石墨烯场效应晶体管的制备方法 |
CN115354385B (zh) * | 2022-08-02 | 2024-03-29 | 深圳清华大学研究院 | 一种单晶畴、多晶畴石墨烯及其制备方法 |
Citations (2)
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CN103500761A (zh) * | 2013-09-28 | 2014-01-08 | 复旦大学 | 一种沟道宽度可控的石墨烯纳米带Fin-FET器件及其制备方法 |
CN102569516B (zh) * | 2012-01-10 | 2014-01-15 | 合肥工业大学 | 通过MoO3表面掺杂制备p-CdS纳米线及p-CdS/n-Si纳米p-n结的方法 |
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US7838809B2 (en) * | 2007-02-17 | 2010-11-23 | Ludwig Lester F | Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials |
JP5135825B2 (ja) * | 2007-02-21 | 2013-02-06 | 富士通株式会社 | グラフェントランジスタ及びその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN102569516B (zh) * | 2012-01-10 | 2014-01-15 | 合肥工业大学 | 通过MoO3表面掺杂制备p-CdS纳米线及p-CdS/n-Si纳米p-n结的方法 |
CN103500761A (zh) * | 2013-09-28 | 2014-01-08 | 复旦大学 | 一种沟道宽度可控的石墨烯纳米带Fin-FET器件及其制备方法 |
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Effective date of registration: 20191226 Address after: 212300 Xingxiang village and Gaolou village, Danyang Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Danyang HaoMao Semiconductor Technology Co., Ltd Address before: Zhenjiang City, Jiangsu Province, 212013 Jingkou District Road No. 301 Patentee before: jiangsu university |
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Address after: 212300 plant 4, Xinfeng South Road (Nissan Park South District), Danyang Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Jiangsu HaoMao Semiconductor Co.,Ltd. Address before: 212300 Xingxiang village and Gaolou village, Danyang Development Zone, Zhenjiang City, Jiangsu Province Patentee before: Danyang HaoMao Semiconductor Technology Co.,Ltd. |
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