CN103779784B - A kind of semiconductor laser for raman spectroscopy measurement - Google Patents
A kind of semiconductor laser for raman spectroscopy measurement Download PDFInfo
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- CN103779784B CN103779784B CN201410063051.9A CN201410063051A CN103779784B CN 103779784 B CN103779784 B CN 103779784B CN 201410063051 A CN201410063051 A CN 201410063051A CN 103779784 B CN103779784 B CN 103779784B
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Abstract
The invention discloses a kind of semiconductor laser for raman spectroscopy measurement, including light power stabilising system, opal system, first interferometric filter, second interferometric filter, first collimating lens, tapered amplifier, laser shaping system, base plate and electric current temperature control module, opal system, first interferometric filter, second interferometric filter, first collimating lens, tapered amplifier and laser shaping system are sequentially arranged on base plate, electric current temperature control module is connected with tapered amplifier, the laser of tapered amplifier rear end face output exports circular light spot after laser shaping system.The semiconductor laser of the present invention is linear cavity structure, it is possible to obtain stable high-power output.
Description
Technical field
The present invention relates to a kind of semiconductor laser, a kind of semiconductor laser being applicable to raman spectroscopy measurement.
Background technology
Raman spectroscopy is a kind of light scattering technique, can by the spectral signal of the generation that interacts of chemical bond in light and material
To provide sample chemical structure, phase and form, degree of crystallinity and molecule rotation and the details of vibration, have without sampling,
Highly sensitive, detection range is wide, disturb the advantages such as little, is that a kind of effective structure of matter analyzes means of testing.Raman scattering is
India's physicist C .V.Raman found in nineteen twenty-eight, different from Rayleigh scattering, and Raman scattering is a kind of inelastic scattering,
When homogeneous beam incident light photons and interaction of molecules, energy exchange occurring, photon not only changes the direction of motion, simultaneously by one
Portion of energy passes to molecule, or the vibration of molecule and rotational energy pass to photon, thus changes the frequency of photon.Draw
Graceful scattering is divided into stokes scattering and non-stokes scattering, and what common Raman experiments detected is stokes scattering, draws
The difference of the frequency rate of graceful scattered light and Rayleigh light scattering light is referred to as Raman shift.Raman shift is unrelated with line of incidence frequency, and only with
Molecular structure is relevant, just can be to material by the intensity analyzing the Raman line number of test substance, the size of shift value and bands of a spectrum
Carry out qualitative identification and quantitative analysis.The initial light source of Raman spectroscopy is the daylight focused on, and uses mercury-arc lamp later, due to
Intensity is low and the poor development limiting Raman spectroscopy of monochromaticity, and the twentieth century laser sixties comes out and is incorporated into Raman spectrum
After instrument is as excitation source, along with raising and the computer application of Technique of Weak Signal Detection, Raman spectrum has obtained rapidly
Development, occur in that the newest Raman spectroscopy, be widely applied to chemical material, petrochemical industry, archaeology
The field such as analysis, medicinal pharmacology, environmental conservation, geology detecting, food quality inspection, safety check are explosion-proof.
Narrow linewidth, superpower laser in ultraviolet, visible infrared wavelength range the most all can be as the light of Raman spectroscopy
Source, the sensitivity measured, spatial resolution etc. are had a great impact by the selecting of wavelength, the intensity of Raman scattering and optical maser wavelength
Biquadratic be inversely proportional to, therefore, blue green visible ray scattering strength be eager to excel more than 15 times than near-infrared laser, additionally space
Resolution is determined by the diameter of laser facula, and according to the condition of diffraction limit, short wavelength light source is better than long wavelength.For this
The laser of 785nm involved in bright belongs to near-infrared laser, owing to the absorption band of only a few materials is positioned near infrared region, therefore
This laser can disturb by Fluorophotometry effectively, although its sensitivity shorter wavelength is low, but can pass through surface-enhanced Raman light
The intensity of Raman signal is effectively improved by spectral technology, and the photon energy additionally, due to near-infrared laser is relatively low, will not cause
Damage and degraded to testing sample.The laser instrument of the most conventional 785nm wave band is mostly semiconductor laser, and it has effect
Rate is high, volume is little, life-span length, the advantage such as cheap, but high power semiconductor lasers device often exist transverse mode characteristic poor,
Spectral quality difference and wavelength with the current temperature change problem such as greatly, so how overcome the problems referred to above realize high-power, narrow linewidth,
The semiconductor laser with good optical quality has been output into research direction in recent years.
Summary of the invention
The technical problem to be solved in the present invention is to provide that one can spectral quality be good on the premise of high-power and wavelength with temperature becomes
Change little laser instrument.
In order to solve above-mentioned technical problem, the invention provides a kind of semiconductor laser for raman spectroscopy measurement, including light
Power stablizing system, opal system, the first interferometric filter, the second interferometric filter, the first collimating lens, tapered amplifier,
Laser shaping system, base plate and electric current temperature control module, opal system, the first interferometric filter, the second interferometric filter, first
Collimating lens, tapered amplifier and laser shaping system are sequentially arranged on base plate, the second interferometric filter and the first interference filter
The Free Spectral Range of sheet is different, and the laser of tapered amplifier front end face output sequentially passes through the first collimating lens, second dry
Entering opal system after relating to optical filter and the first interferometric filter, opal system allows highly transmissive light to pass through, and is pressed by remaining laser
Former road feeds back in tapered amplifier, and light power stabilising system receives highly transmissive light, and optical power signals feeds back to electric current temperature control
Module, electric current temperature control module is connected with tapered amplifier, and the laser of tapered amplifier rear end face output is after laser shaping system
Output circular light spot, circular light spot is as the output of laser instrument.
Use the second interferometric filter and the first interferometric filter mutually different interferometric filter of the two Free Spectral Range to cone
The light of shape amplifier output carries out frequency-selecting, and the light of the specific wavelength the most simultaneously meeting two interferometric filter interference conditions just has height
Transmitance, the most single optical filter decreases the probability of the longitudinal mode change caused due to the competition of multiple longitudinal modes so that laser warp
The modulation of Free Spectral Range difference has been carried out, while ensureing interference filter element high-fineness further when crossing two interference filters
Improve the selecting frequency characteristic of laser instrument, enhance the stability of laser instrument output；Opal system is used to be carried out by the laser after frequency-selecting
Reflection, and allow highly transmissive light to pass through, improve the resistance to shock of laser instrument；Use light power stabilising system high saturating to pass through
Penetrate light to monitor in real time, and to electric current temperature control module transmitting optical power signal, then controlled tapered amplifier by electric current temperature control module
Electric current, thus realize the stable output of tapered amplifier.
As the scheme that limits further of the present invention, light power stabilising system includes detector and feedback control system, and detector connects
Receiving highly transmissive light, optical power signals is fed back to electric current temperature control module by feedback control system.Detector is used to receive highly transmissive light,
By feedback control system, optical power signals fed back to electric current temperature control module, it is achieved tapered amplifier is launched the real-time of power
Monitoring.
As the scheme that limits further of the present invention, opal system includes the second collimating lens and high reflection mirror, and high reflection mirror is positioned at
In the focus of the second collimating lens, the second collimating lens projects on high reflection mirror after collimating the laser entered, high reflection
Mirror allows highly transmissive light to pass through, and reflects remaining laser.The second collimating lens and high reflection mirror is used to constitute opal system, to entering
Penetrate laser and carry out chatoyancy process, improve the resistance to shock of laser instrument.
As the scheme that limits further of the present invention, laser shaping system includes non-spherical lens and post lens, non-spherical lens pair
The laser of quick shaft direction collimates, and the light of slow-axis direction is collimated and astigmatic compensation by post lens.Owing to tapered amplifier exists
Fast axle and the Exit positions of slow-axis direction and the angle of divergence are different, and the light of both direction can not be carried out by a non-spherical lens simultaneously
Collimation, so using non-spherical lens to collimate the laser of quick shaft direction, uses post lens that the light of slow-axis direction is carried out standard
Straight and astigmatic compensation, to obtain the output as laser instrument of the circular Gaussian hot spot.
Scheme as a further improvement on the present invention, base plate is provided with refrigeration module, and refrigeration module is connected with electric current temperature control module.
Use on base plate, be provided with refrigeration module, and refrigeration module is connected with electric current temperature control module, by electric current temperature control module to refrigeration
Module automatically controls, thus realizes the equipment on base plate is carried out temperature control, further increases the steady of laser instrument output
Qualitative.
Scheme as a further improvement on the present invention, tapered amplifier is additionally provided with semiconductor cooler, semiconductor cooler sets
Critesistor, critesistor and semiconductor cooler is had all to be connected with electric current temperature control module.Use critesistor to tapered amplifier
Temperature be acquired, by electric current temperature control module control semiconductor cooler temperature, thus realize further to taper amplify
The temperature of device controls, and further increases the stability of laser instrument output.
As the scheme that limits further of the present invention, the thickness difference 0.1～0.01 of the first interferometric filter and the second interferometric filter
mm.Different the first interferometric filter of two thickness and the second interferometric filter is used to realize different Free Spectral Ranges, only
The light having the specific wavelength simultaneously meeting two interferometric filter interference conditions just has high permeability so that laser is through two interference
Carry out the modulation of Free Spectral Range difference during optical filtering, while ensureing interference filter element high-fineness, further increase laser
The selecting frequency characteristic of device.
As the scheme that limits further of the present invention, the optical direction of the first interferometric filter and the second interferometric filter exists one
Individual angle.Two the first interferometric filters that there is an angle on optical direction and the second interferometric filter is used to realize not
Same Free Spectral Range, the light of the specific wavelength the most simultaneously meeting two interferometric filter interference conditions just has high permeability,
Make laser carry out the modulation of Free Spectral Range difference through two interference filters, ensure interference filter element high-fineness
Further increase the selecting frequency characteristic of laser instrument simultaneously.
Scheme as a further improvement on the present invention, the front end face of tapered amplifier is provided with anti-reflection film, and rear end face is provided with high anti-
Penetrate film.Use and anti-reflection film is set on the front end face of tapered amplifier, rear end face arranges highly reflecting films, improve taper and amplify
Device front end face transmission performance and the reflecting properties of rear end face.
It is equipped with on end face before and after scheme as a further improvement on the present invention, the first interferometric filter and the second interferometric filter
Highly reflecting films.Use and highly reflecting films are set on end face before and after the first interferometric filter and the second interferometric filter, improve and interfere
The high-fineness filtering of optical filter.
The beneficial effects of the present invention is: the second interferometric filter and first that two Free Spectral Ranges of (1) employing are different is interfered
The light that tapered amplifier is exported by optical filter carries out frequency-selecting, it is ensured that further increase laser while interference filter element high-fineness
The selecting frequency characteristic of device, enhances the stability of laser instrument output；(2) opal system is used to improve the resistance to shock of laser instrument；
(3) light power stabilising system is used to be monitored and controlled in real time, it is achieved that the stable output of tapered amplifier；(4) system is used
Chill block carries out temperature regulation to the equipment on base plate, further increases the stability of laser instrument output；(5) temperature-sensitive electricity is used
The temperature of tapered amplifier is adjusted by resistance and semiconductor cooler, further increases the stability of laser instrument output；(6)
Anti-reflection film and highly reflecting films are used to realize transmission performance and the reflecting properties of each optical device.
Accompanying drawing explanation
Fig. 1 is the structural representation of the semiconductor laser of the present invention；
Fig. 2 is the tapered amplifier output light transmission spectrum after interferometric filter of the present invention.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and referring to the drawings
The present invention is described in detail, but should not limit the scope of the invention with this.
As it is shown in figure 1, the semiconductor laser for raman spectroscopy measurement of the present invention, including light power stabilising system 1, cat
Eye system the 2, first interferometric filter the 3, second interferometric filter the 4, first collimating lens 5, tapered amplifier 6, laser are whole
Shape system 7, base plate 8 and electric current temperature control module 9, opal system the 2, first interferometric filter the 3, second interferometric filter 4,
First collimating lens 5, tapered amplifier 6 and laser shaping system 7 are sequentially arranged on base plate 8, the second interferometric filter 4
Different with the Free Spectral Range of the first interferometric filter 3, the laser of tapered amplifier 6 front end face output sequentially passes through the
Entering opal system 2 after collimating lens the 5, second interferometric filter 4 and the first interferometric filter 3, opal system 2 allows height
Transmission light passes through, and reflexes in tapered amplifier 6 by remaining laser by former road, and light power stabilising system 1 receives highly transmissive light,
And optical power signals is fed back to electric current temperature control module 9, electric current temperature control module 9 is connected with tapered amplifier 6, tapered amplifier 6
The laser of rear end face output exports circular light spot after laser shaping system 7, and circular light spot is as the output of laser instrument.
Wherein, light power stabilising system 1 includes detector 11 and feedback control system 12, and detector 11 receives highly transmissive light,
Optical power signals is fed back to electric current temperature control module 9 by feedback control system 12；Opal system 2 includes the second collimating lens 22 He
High reflection mirror 21, high reflection mirror 21 is positioned in the focus of the second collimating lens 22, second collimating lens 22 laser to entering
Projecting on high reflection mirror 21 after collimating, high reflection mirror 21 allows highly transmissive light to pass through, and reflects remaining laser；Laser
Orthopedic systems 7 includes non-spherical lens 71 and post lens 72, and the laser of quick shaft direction is collimated by non-spherical lens 71, post
The light of slow-axis direction is collimated and astigmatic compensation by lens 72.
Laser instrument operationally, is first sent laser by the front end face of tapered amplifier 6, more right by the first laser collimator lens 5
It collimates, and the laser after collimation carries out frequency-selecting, Jing Guoxuan through the first interferometric filter 3 and the second interferometric filter 4 again
Transmission light after Pin enters in the opal system 2 being made up of the second collimating lens 22 and high reflection mirror 21, and high reflection mirror 21 is permitted
Permitted the highly transmissive light process of fraction, and major part Guang Youyuan road is fed back in tapered amplifier 6, the laser after reflection and cone
Shape amplifier 6 rear end face composition exocoel and starting of oscillation, after detector 11 is positioned at high reflection mirror 21, be used for receiving highly transmissive light,
By feedback control system 12, optical power signals being fed back to electric current temperature control module 9, electric current temperature control module 9 is according to the light received
The electric current of tapered amplifier 6 is controlled by power signal, thus realizes launching tapered amplifier 6 control of power, taper
The laser of the rear end face output of amplifier 6 passes through the laser shaping system 7 being made up of non-spherical lens 71 and post lens 72, by
The light of quick shaft direction is collimated by non-spherical lens 71, then is collimated the light of slow axis by post lens 72, and carries out simultaneously
Astigmatic compensation so that laser instrument output circular light spot.
Use the second interferometric filter 4 and the first interferometric filter 3 mutually different interferometric filter of the two Free Spectral Range
The light of tapered amplifier 6 output is carried out frequency-selecting, meets the light of specific wavelength of two interferometric filter interference conditions just the most simultaneously
Having high permeability, the most single optical filter decreases the probability of the longitudinal mode change caused due to the competition of multiple longitudinal modes so that
Laser receives the modulation of Free Spectral Range difference through two interferometric filters, is ensureing the same of interferometric filter high-fineness
Time further increase the selecting frequency characteristic of laser instrument, enhance the stability of laser instrument output；Use opal system 2 by after frequency-selecting
Laser reflect, and allow highly transmissive light to pass through, improve the resistance to shock of laser instrument；Use light power stabilising system 1
The highly transmissive light passed through is monitored in real time, and to electric current temperature control module 9 transmitting optical power signal, then by electric current temperature control module
9 electric currents controlling tapered amplifier 6, thus realize the stable output of tapered amplifier 6.
When the concrete semiconductor laser building the present invention, being first placed on base plate 8 by tapered amplifier 6, taper is amplified
It is 780nm that device 6 can choose operation wavelength, and output is more than 1W, and packing forms is C-Mount, then collimates first
Lens 5 are placed on base plate 8, the first collimating lens 5 can choose focal length be 3.1mm, numerical aperture be the aspheric surface of 0.68
Lens, adjust it up and down and the position of pitching, front end face the laser exported tapered amplifier 6 collimates so that
Its beam direction is parallel with base plate, and within 5m, hot spot does not observes and significantly assembles and dissipate；The is installed again on base plate 8
One interferometric filter 3 and the second interferometric filter 4, is placed in parallel the first interferometric filter 3 and the second interferometric filter 4
In light path after tapered amplifier 6 front end face collimation, utilize spectrogrph saturating to it in the case of tapered amplifier 6 free-running
Penetrating spectrum to measure, carefully regulate the position of two optical filters so that it is max transmissive peak is at 785nm wavelength, first interferes
Optical filter 3 and the second interferometric filter 4 are made by quartz glass, and its thickness is respectively 1mm and 1.05mm, two end
Face is all deposited with the normal incidence high-reflecting film at 785nm wavelength, and its reflectance is more than 99.8%, therefore in the case of normal incidence all
Can obtain obtaining good fineness, and both Free Spectral Ranges also exist the least difference.
Need opal system 2 is adjusted, it is possible to use the DFB being operated in 785nm partly leads before opal system 2 is installed
Opal system 2 is adjusted by body alignment laser as light source, makes high reflection mirror 21 be in the focal plane of the second collimating mirror 22
On, and high reflection mirror 21 is fixed, after then opal system 2 being placed on the first interferometric filter 3, the light to its transmission is carried out
Reflection, now noting observing the output light of tapered amplifier 6, until obtaining the output of high-power laser, recycling detector 11
Record the optical power signals of highly transmissive light by high reflection mirror 21, then by feedback control system 12 and electric current temperature control system 9 phase
Even, electric current temperature control system 9 is utilized to control to obtain the laser output of firm power.
Last installation orthopedic systems 7 on base plate 8 again, is 3.1mm, numerical aperture first with laser shaping system 7 mid-focal length
Footpath be 0.68 non-spherical lens 71 fast axle is collimated, but owing to tapered amplifier 6 is in fast axle and the outgoing of slow-axis direction
Position and the angle of divergence are different, utilize the non-spherical lens 71 can not be simultaneously by the light of both direction, therefore selecting again focal length is 50
Slow axis is further collimated by the post lens 72 of mm, and laser facula is carried out shaping simultaneously, to obtain circular Gaussian light
Speckle outgoing.
In order to improve the stability of laser instrument further, base plate 8 arranges refrigeration module, refrigeration module and electric current temperature control module
9 are connected.Use on base plate 8, be provided with refrigeration module, and refrigeration module is connected with electric current temperature control module 9, by electric current temperature
Refrigeration module is automatically controlled by control module 9, thus realizes the equipment on base plate 8 is carried out temperature control, improves further
The stability of laser instrument output.
In order to improve the stability of laser instrument further, it is also possible to also set up semiconductor cooler on tapered amplifier 6, half
On conductor refrigerator, critesistor is set, between tapered amplifier 6 and semiconductor cooler, applies heat conductive silica gel carry out effectively
Conduction of heat, the current controling end of tapered amplifier 6, critesistor are all connected with electric current temperature control system 9 with semiconductor cooler.
In order to the first interferometric filter 3 is arranged to different Free Spectral Ranges from the second interferometric filter 4, can be by first
Interferometric filter 3 differs 0.1～0.01mm with the thickness of the second interferometric filter 4.
In order to the first interferometric filter 3 is arranged to different Free Spectral Ranges from the second interferometric filter 4, it is also possible to by
One angle of existence is set on the optical direction of one interferometric filter 3 and the second interferometric filter 4.
In order to improve transmission performance and the reflecting properties of rear end face of tapered amplifier 6 front end face further, can amplify in taper
Anti-reflection film is set on the front end face of device 6, rear end face arranges highly reflecting films.
In order to improve the first interferometric filter 3 and the reflecting properties of the second interferometric filter 4 front/rear end and high-fineness further
Filtering, can be respectively provided with the high anti-of 785nm wavelength before and after the first interferometric filter 3 and the second interferometric filter 4 on end face
Penetrating film, its reflectance is more than 99.8%.
In order to improve first collimating mirror the 5, second collimating mirror 22, non-spherical lens 71 and post lens 72 front/rear end further
Transmission performance, can be all provided with at first collimating mirror the 5, second collimating mirror 22, non-spherical lens 71 and post lens 72 front/rear end
Put anti-reflection film, to prevent reflex.
As in figure 2 it is shown, the transmissison characteristic that interferometric filter has determines according to the thickness of beam incident angle and optical filter, device
Parameter is characterized by Free Spectral Range and fineness, starting of oscillation will obtain narrow linewidth when interference piece transmission peaks is mated with external cavity mode
Output, and still may can there is the competition of multiple longitudinal mode easily cause longitudinal mode to change owing to semiconductor gain composes wider single optical filter,
Its selecting frequency characteristic then can be improved further by introducing two close interferometric filters of Free Spectral Range, or more stable
Laser exports.In figure, a curve is the tapered amplifier output light transmission after single interference optical filter of front end face plating anti-reflection film
Compose the change curve with wavelength, it can be seen that after removing the impact of background of tapered amplifier spontaneous emission spectrum, transmission spectrum shows
It is that amplitude is identical at sinusoidal form, and curve b is to obtain after the interferometric filter that two Free Spectral Ranges are close
Transmission spectrum, it can be seen that introduce a tune on transmission spectrum due to the small Free Spectral Range difference of two interferometric filters existence
System so that double interferometric filter transmission spectrum b ratios go alone that to relate to filter transmission spectrum a more stable, and double interferometric filter transmission spectrum
The max transmissive peak of b is at 785nm wavelength.
Above technical scheme can realize a kind of compact conformation, can easily be accommodated, the exocoel of narrow linewidth, high power, good stability half
Conductor laser, is applicable to the measurement of Raman spectrum.Although describe in detail the present invention with reference to above-mentioned specific embodiment, but
It is to should be appreciated that the present invention is not limited to disclosed embodiment and embodiment, for this professional field technical staff, can
Its form and details are carried out various change.The form of such as first, second interferometric filter can be replaced by the choosing of other transmission-types
Frequently element, the service band of tapered amplifier could alternatively be other infrared band.Be it should be understood that and be the foregoing is only this
The instantiation of invention, is not limited to the present invention, all made within the spirit and principles in the present invention any amendment,
Equivalent, improvement etc., should be included within the scope of the present invention.
Claims (9)
1. the semiconductor laser for raman spectroscopy measurement, it is characterised in that: include light power stabilising system (1), opal system
System (2), the first interferometric filter (3), the second interferometric filter (4), the first collimating lens (5), tapered amplifier (6),
Laser shaping system (7), base plate (8) and electric current temperature control module (9), described opal system (2), the first interferometric filter (3),
Second interferometric filter (4), the first collimating lens (5), tapered amplifier (6) and laser shaping system (7) are installed successively
On base plate (8), described second interferometric filter (4) is different with the Free Spectral Range of the first interferometric filter (3),
The laser of described tapered amplifier (6) front end face output sequentially passes through the first collimating lens (5), the second interferometric filter (4)
Enter opal system (2) afterwards with the first interferometric filter (3), described opal system (2) allows highly transmissive light to pass through, and will
Remaining laser feeds back in tapered amplifier (6) by former road, and described light power stabilising system (1) receives highly transmissive light, and will
Optical power signals feeds back to electric current temperature control module (9), and described electric current temperature control module (9) is connected with tapered amplifier (6), institute
The laser stating the output of tapered amplifier (6) rear end face exports circular light spot, described circular light after laser shaping system (7)
Speckle is as the output of laser instrument；Described opal system (2) includes the second collimating lens (22) and high reflection mirror (21), described
High reflection mirror (21) is positioned in the focus of the second collimating lens (22), described second collimating lens (22) laser to entering
Projecting on high reflection mirror (21) after collimating, described high reflection mirror (21) allows highly transmissive light to pass through, and reflects remaining
Laser.
Semiconductor laser for raman spectroscopy measurement the most according to claim 1, it is characterised in that: described light power stabilising
System (1) includes detector (11) and feedback control system (12), and described detector (11) receives highly transmissive light, described
Optical power signals is fed back to electric current temperature control module (9) by feedback control system (12).
Semiconductor laser for raman spectroscopy measurement the most according to claim 1, it is characterised in that: described laser shaping system
System (7) includes non-spherical lens (71) and post lens (72), and the laser of quick shaft direction is entered by described non-spherical lens (71)
Row collimation, the light of slow-axis direction is collimated and astigmatic compensation by described post lens (72).
Semiconductor laser for raman spectroscopy measurement the most according to claim 1, it is characterised in that: described base plate (8)
Being provided with refrigeration module, described refrigeration module is connected with electric current temperature control module (9).
5. according to the semiconductor laser for raman spectroscopy measurement described in claim 1 or 4, it is characterised in that: described taper is put
Being additionally provided with semiconductor cooler on big device (6), described semiconductor cooler is provided with critesistor, described critesistor and partly leading
Chiller is all connected with electric current temperature control module (9).
Semiconductor laser for raman spectroscopy measurement the most according to claim 1, it is characterised in that: described first interferes filter
Mating plate (3) differs 0.1～0.01mm with the thickness of the second interferometric filter (4).
Semiconductor laser for raman spectroscopy measurement the most according to claim 1, it is characterised in that: described first interferes filter
An angle is there is on mating plate (3) and the optical direction of the second interferometric filter (4).
Semiconductor laser for raman spectroscopy measurement the most according to claim 1, it is characterised in that: described tapered amplifier
(6) front end face is provided with anti-reflection film, and rear end face is provided with highly reflecting films.
Semiconductor laser for raman spectroscopy measurement the most according to claim 1, it is characterised in that: described first interferes filter
It is equipped with highly reflecting films on end face before and after mating plate (3) and the second interferometric filter (4).
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| CN106451072A (en) * | 2016-11-30 | 2017-02-22 | 中国科学院国家授时中心 | Liquid crystal tuned high power external cavity laser |
| CN111146685A (en) * | 2019-12-06 | 2020-05-12 | 中国电子科技集团公司第十三研究所 | Optical fiber coupling semiconductor laser |
| CN112636133B (en) * | 2020-11-13 | 2022-07-19 | 香港理工大学深圳研究院 | External cavity modulation method with variable free spectral range and swept-frequency laser |
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| US5793784A (en) * | 1997-03-10 | 1998-08-11 | The Research Foundation Of State University Of New York | Apparatus and method for spectral narrowing of high power diode laser arrays |
| JP2002141609A (en) * | 2000-11-02 | 2002-05-17 | Furukawa Electric Co Ltd:The | Semiconductor laser module, laser unit, and raman amplifier |
| CN1299407C (en) * | 2004-10-22 | 2007-02-07 | 清华大学 | Cat's eye chamber helium neon laser |
| CN102738702B (en) * | 2012-01-19 | 2014-04-09 | 四川马尔斯科技有限责任公司 | External cavity type single-wavelength tunable laser using FP (Fabry-Perot) laser as grain light source |
| CN203760844U (en) * | 2014-02-24 | 2014-08-06 | 南京派光信息技术有限公司 | Semiconductor laser device used for Raman light spectrum measurement |
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