CN106451072A - Liquid crystal tuned high power external cavity laser - Google Patents
Liquid crystal tuned high power external cavity laser Download PDFInfo
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- CN106451072A CN106451072A CN201611083359.5A CN201611083359A CN106451072A CN 106451072 A CN106451072 A CN 106451072A CN 201611083359 A CN201611083359 A CN 201611083359A CN 106451072 A CN106451072 A CN 106451072A
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- collimating mirror
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
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Abstract
The invention relates to a liquid crystal tuned high power external cavity laser. A light exit is machined in each of the left side wall and the right side wall of a box body, a light amplification chip is arranged at the middle part of the bottom of the box body, a second collimating mirror is arranged at the left side of the light amplification chip, a first collimating mirror is arranged at the right side of the light amplification chip, a mode selection device is arranged at the left side of the second collimating mirror, a multiwave liquid crystal variable retarder is arranged at the left side of the mode selection device, a focusing lens is arranged at the left side of the multiwave liquid crystal variable retarder, a completely reflecting mirror is arranged at the left side of the focusing lens, a convex cylindrical lens is arranged at the right side of the first collimating mirror, a concave cylindrical lens is arranged at the right side of the convex cylindrical lens, and a top cover is arranged at the top of the box body. The liquid crystal tuned high power external cavity laser provided by the invention adopts the liquid crystal variable retarder for tuning cavity length of a laser, so that no moving part exists in the laser, and stability and reliability of the laser are improved; meanwhile, a 'cat eye' structure is formed by virtue of the focusing lens, so that light reflected by the light reflecting mirror returns back, shock resistance of the laser is improved, and the laser provided by the invention can be popularized and applied in the technical fields of atom cooling, remote optical information transmission and the like.
Description
Technical field
The invention belongs to field of laser device technology is and in particular to arrive a kind of optical amplification chip laser instrument based on liquid crystal tuning
Device.
Background technology
Laser instrument is respectively provided with extensive application in fields such as quantum frequency standards, Atomic Physics, basic physicses and biomedicines.Especially
It is to be required to laser instrument energy output work in the laser cooling of remote optical-fibre communications, atom and the research in the field such as atomic clock
Rate is big and the laser of CFS center frequency stabilization, and this requires that laser instrument can not only produce high power laser and have preferable stability
And reliability.
Traditional outside cavity gas laser, the laser power of output low it is necessary to putting of laser power is realized by optical amplifier system
Greatly, this requires to use cooperatively Optical Maser System with optical amplification system, and this is virtually being increased by the use of optical component
Quantity, not only increases system cost, and increased the complexity of system, reduce to a certain extent system reliability and
Stability.Traditional outside cavity gas laser is to tune external cavity length by piezoelectric ceramics simultaneously, increased moving component, to laser instrument
Stability has a certain impact.
Content of the invention
The technical problem to be solved is to overcome the shortcoming of above-mentioned laser instrument, provides a kind of miniaturization, cost
The high-power outside cavity gas laser of low, good reliability liquid crystal tuning.
Solve above-mentioned technical problem be employed technical scheme comprise that：Light hole, casing are machined with casing left and right sidewall
Bottom middle setting has optical amplification chip, and on the left of optical amplification chip, light exit direction is provided with the second collimating mirror, right side light outgoing
Direction is provided with the first collimating mirror, and on the left of the second collimating mirror, light exit direction is provided with modeling device, and on the left of modeling device, light goes out
Penetrate direction and be provided with many ripples LC variable delayer, on the left of many ripples LC variable delayer, light exit direction is provided with focusing thoroughly
Mirror, on the left of condenser lenses, light exit direction is provided with completely reflecting mirror, and on the right side of the first collimating mirror, to be provided with projection saturating for light exit direction
Mirror, on the right side of projection lens, light exit direction is provided with concave cylindrical lenses, and the top of casing is provided with top cover.
The completely reflecting mirror of the present invention constitutes laserresonator, the first collimating mirror, the second collimating mirror with the plane of projection lens
Positioned at resonance intracavity.
On the left of the optical amplification chip of the present invention light-emitting area and right side light-emitting area vacuum replace 6～14 layers of silicon dioxide of evaporation and
Zirconium dioxide anti-reflection film.
First collimating mirror of the present invention and the second collimating mirror are biconvex lens, the left convex surface of biconvex lens and the song of right convex surface
Rate radius is 1～6mm, 12～18 layers of zirconium dioxide of vacuum evaporation or antireflecting silicon dioxide film on the minute surface of biconvex lens；Described
Modeling device (5) be that bandwidth is less than 100GHz, incisure density is the transmission grating of 400～800l/mm or transmitance is 85%
～95% Fabry-Perot etalon；The delayed scope of described many ripples LC variable delayer is 60nm～6 λ, surface vacuum
Evaporation has 8～16 layers of zirconium dioxide anti-reflection film, anti-reflection film scope 350～1700nm；Described condenser lenses are biconvex lens, burnt
Away from for 10～20mm, radius of curvature is 5.5mm；Described completely reflecting mirror is plane mirror, and on the minute surface of completely reflecting mirror, vacuum replaces
Evaporation has 2～8 layers of aluminium sesquioxide and silicon dioxide is all-trans film；Described projection lens are planoconvex lenss, a left side for planoconvex lenss
Side is convex surface, right side is plane, and the radius of curvature of convex surface is 14～18mm, and in the plane on the left of projection lens, vacuum replaces and is deposited with
12～20 Afluon (Asta)s and calcium fluoride part reflectance coating or vacuum replace 12～18 layers of silicon dioxide of evaporation and the reflection of Afluon (Asta) part
Film, 8～14 layers of zirconium dioxide of vacuum evaporation and antireflecting silicon dioxide film on the song on the right side of projection lens；Described concave cylindrical lenses are
Planoconcave lenses, the left side of planoconcave lenses is plane, right side is concave surface, and right side curvature radius is 2～6mm, and focal length is 4～10mm,
8～14 layers of zirconium dioxide of vacuum evaporation and antireflecting silicon dioxide film in plane on the left of concave cylindrical lenses.
First collimating mirror of the present invention and the second collimating mirror are biconvex lens, the left convex surface of biconvex lens and the song of right convex surface
Rate radius is identical, 12～18 layers of zirconium dioxide of vacuum evaporation or antireflecting silicon dioxide film on the minute surface of biconvex lens.
First collimating mirror of the present invention and the second collimating mirror are biconvex lens, the left convex surface of the second collimating mirror and right convex surface
The material of radius of curvature and plated anti-reflection film is identical with the first collimating mirror with the number of plies.
Produce laser and be amplified due to present invention employs optical amplification chip, by laser amplifier system and laser instrument system
System is combined, largely reduces the volume producing high power laser system for use in carrying, reduces the product cost of laser instrument.
Tuned laser chamber length is come using LC variable delayer so that movement-less part in laser instrument simultaneously, improve laser instrument
Stability and reliability.Constitute " opal " outer-cavity structure using condenser lenses and realize high reliability Shakeproof external cavity, improve laser
The resistance to shock of device.The present invention has the advantages of structure is simple, small volume, and product cost is low, reliability and stability are good, can be
Popularization and application in the technical fields such as atom cooling, remote optical transmission of information.
Brief description
Fig. 1 is the structural representation of one embodiment of the invention.
In figure：1st, concave cylindrical lenses；2nd, projection lens；3rd, the first collimating mirror；4th, optical amplification chip；5th, the second collimating mirror；6、
Modeling device；7th, many ripples LC variable delayer；8th, condenser lenses；9th, completely reflecting mirror；10th, top cover；11st, casing.
Specific embodiment
The present invention is described in more detail with reference to the accompanying drawings and examples, but the invention is not restricted to these embodiments.
Embodiment 1
In FIG, the high-power outside cavity gas laser of the liquid crystal tuning of the present embodiment includes：
Light hole is machined with the left and right sides wall of casing 11, the bottom centre position screw threads for fastening of casing 11 couples
Part is fixedly connected and is provided with optical amplification chip 4, and optical amplification chip 4 left side light-emitting area and right side light-emitting area vacuum replace 10 layers of evaporation
Silicon dioxide and zirconium dioxide anti-reflection film, can produce the laser that centre wavelength is 375～1550nm as seed light, in casing 11
The left side light exit direction of bottom optical amplification chip 4 on be fixedly connected with screw threads for fastening connector the second collimating mirror 4 be installed,
Second collimating mirror 4 is biconvex lens, and the left convex surface of biconvex lens and the radius of curvature of right convex surface are 4.5mm, the second collimating mirror 4
14 layers of zirconium dioxide anti-reflection film of vacuum evaporation on minute surface.In the left side light exit direction of bottom second collimating mirror 5 of casing 11
It is fixedly connected with screw threads for fastening connector and modeling device 6 is installed, it is 800l/ that modeling device 6 carries a width of 50GHz, incisure density
The transmission grating of mm or the Fabry-Perot etalon that transmitance is 90%.Use in bottom the second collimating mirror 5 left end of casing 11
Screw threads for fastening connector is installed with many ripples LC variable delayer 7, and many ripples LC variable delayer 7 delayed scope is
600nm, surface vacuum evaporation has 12 layers of zirconium dioxide anti-reflection film, anti-reflection film scope 1000nm；Operation wavelength 650nm～
1050nm, is postponed uniformity and is less than λ/50, made using mutually row crystalline material.Many ripples LC variable delayer 7 passes through to change electricity
Pressure makes itself refractive index change so that laser phase change, realizes the tuning of laser resonant cavity length.In casing
11 bottom many ripples LC variable delayer 7 left side light exit direction screw threads for fastening connector is installed with condenser lenses 8,
Condenser lenses 8 are biconvex lens, and focal length is 18.4mm, and radius of curvature is 5.5mm, in bottom condenser lenses 8 left end of casing 11
It is installed with completely reflecting mirror 9 with screw threads for fastening connector, completely reflecting mirror 9 is plane mirror, on the minute surface of completely reflecting mirror 9, vacuum is handed over
There are 4 layers of aluminium sesquioxide for evaporation and silicon dioxide is all-trans film.Optical amplification chip 4 produces laser with power on, as seed
Light, seed light, by optical amplification chip 4 left side light-emitting area and the outgoing to the left of right side light-emitting area, is shaped to through the second collimating mirror 5 and cuts
Face is oval light beam, incides modeling device 6, carries out modeling by the angle changing modeling device 6 to seed light.Choosing
Seed light after mould incides many ripples LC variable delayer 7, and light is converged to after completely reflecting mirror 9 by seed light line focus lens 8,
It is reflected into optical amplification chip 4 by original optical path after completely reflecting mirror 9 reflection to be amplified.
The right side light exit direction of the bottom optical amplification chip 4 of casing 11 is fixedly connected peace with screw threads for fastening connector
Equipped with the first collimating mirror 3, the first collimating mirror 3 is biconvex lens, and the left convex surface of biconvex lens and the radius of curvature of right convex surface are
4.5mm, 14 layers of zirconium dioxide anti-reflection film of vacuum evaporation on the minute surface of the first collimating mirror 3.Bottom the first collimating mirror 3 in casing 11
Right side light exit direction on be fixedly connected with screw threads for fastening connector projection lens 2 be installed, projection lens 2 are that plano-convex is saturating
Mirror, the left side of planoconvex lenss is plane, right side is convex surface, and the radius of curvature of convex surface is 15mm, in the plane in projection lens 2 left side
Vacuum replaces 16 layers of Afluon (Asta) of evaporation and calcium fluoride part reflectance coating or vacuum replaces 16 layers of silicon dioxide of evaporation and Afluon (Asta) portion
Divide reflectance coating, 11 layers of zirconium dioxide of vacuum evaporation and antireflecting silicon dioxide film on the song on projection lens 2 right side, make projection lens
2 material is N-BK7, is fixed with screw threads for fastening connector in the right side light exit direction of the bottom projection lens 2 of casing 11
Connection is provided with concave cylindrical lenses 1, and concave cylindrical lenses 1 are planoconcave lenses, and the left side of planoconcave lenses is plane, right side is concave surface, concave surface
Radius of curvature be 3.3mm, focal length is 6.3mm, 11 layers of zirconium dioxide of vacuum evaporation and dioxy in the plane in concave cylindrical lenses 1 left side
SiClx anti-reflection film, completely reflecting mirror 9 constitutes laserresonator, the first collimating mirror 3, the second collimating mirror 5 with the plane of concave cylindrical lenses 1
In resonance intracavity, the top screw threads for fastening connector of casing 11 is fixedly connected and has top cover 10, and top cover 10 is processed with duralumin.
Embodiment 2
In above-described embodiment 1, the optical amplification chip 4 left side light-emitting area of the present embodiment and right side light-emitting area vacuum replace steaming
6 layers of silicon dioxide of plating and zirconium dioxide anti-reflection film；First collimating mirror 3 is biconvex lens, the left convex surface of biconvex lens and right convex surface
Radius of curvature be 1mm, 12 layers of zirconium dioxide anti-reflection film of vacuum evaporation on the minute surface of the first collimating mirror 3；Second collimating mirror 4 is double
Convex lenss, the left convex surface of biconvex lens and the radius of curvature of right convex surface are 1mm, vacuum evaporation 12 on the minute surface of the second collimating mirror 4
Layer zirconium dioxide anti-reflection film.Modeling device 6 is with a width of 20GHz, incisure density is the transmission grating of 400/mm or transmitance is
85% Fabry-Perot etalon, many ripples LC variable delayer 7 delayed scope is 3 λ, and surface vacuum evaporation has 8 layers of dioxy
Change zirconium anti-reflection film, anti-reflection film scope 350nm；Condenser lenses 8 are biconvex lens, and focal length is 10mm, and radius of curvature is 5.5mm；Entirely
On the minute surface of reflecting mirror 9, vacuum replaces that evaporation has 2 layers of aluminium sesquioxide and silicon dioxide is all-trans film；Projection lens 2 are that plano-convex is saturating
Mirror, the left side of planoconvex lenss is plane, right side is convex surface, and the radius of curvature of convex surface is 14mm, in the plane in projection lens 2 left side
Vacuum replaces 12 layers of Afluon (Asta) of evaporation and calcium fluoride part reflectance coating or vacuum replaces 12 layers of silicon dioxide of evaporation and Afluon (Asta) portion
Divide reflectance coating, 8 layers of zirconium dioxide of vacuum evaporation and antireflecting silicon dioxide film on the song on projection lens 2 right side；Concave cylindrical lenses 1 are flat
Concavees lens, the left side of planoconcave lenses is plane, right side is concave surface, and the radius of curvature of concave surface is 2mm, focal length is 4mm, concave cylindrical lenses
8 layers of zirconium dioxide of vacuum evaporation and antireflecting silicon dioxide film in the plane in 1 left side, the connection of remaining each parts and parts
Relation is identical with embodiment 1.
Embodiment 3
In above-described embodiment 1, the optical amplification chip 4 left side light-emitting area of the present embodiment and right side light-emitting area vacuum replace steaming
14 layers of silicon dioxide of plating and zirconium dioxide anti-reflection film；First collimating mirror 3 is biconvex lens, the left convex surface of biconvex lens and right convex surface
Radius of curvature be 6mm, 18 layers of zirconium dioxide anti-reflection film of vacuum evaporation on the minute surface of the first collimating mirror 3；Second collimating mirror 4 is double
Convex lenss, the left convex surface of biconvex lens and the radius of curvature of right convex surface are 6mm, vacuum evaporation 18 on the minute surface of the second collimating mirror 4
Layer zirconium dioxide anti-reflection film.Modeling device 6 is with a width of 80GHz, incisure density is the transmission grating of 8001/mm or transmitance is
95% Fabry-Perot etalon, many ripples LC variable delayer 7 delayed scope is 6 λ, and surface vacuum evaporation has 16 layer two
Zirconium oxide anti-reflection film, anti-reflection film scope 1700nm；Condenser lenses 8 are biconvex lens, and focal length is 20mm, and radius of curvature is 5.5mm；
On the minute surface of completely reflecting mirror 9, vacuum replaces that evaporation has 8 layers of aluminium sesquioxide and silicon dioxide is all-trans film；Projection lens 2 are plano-convex
Lens, the left side of planoconvex lenss is plane, right side is convex surface, and the radius of curvature of convex surface is 18mm, the plane in projection lens 2 left side
Upper vacuum replaces 20 layers of Afluon (Asta) of evaporation and calcium fluoride part reflectance coating or vacuum replaces 18 layers of silicon dioxide of evaporation and Afluon (Asta)
Part reflectance coating, 14 layers of zirconium dioxide of vacuum evaporation and antireflecting silicon dioxide film on the song on projection lens 2 right side；Concave cylindrical lenses 1
For planoconcave lenses, the left side of planoconcave lenses is plane, right side is concave surface, and the radius of curvature of concave surface is 6mm, focal length is 10mm, recessed
14 layers of zirconium dioxide of vacuum evaporation and antireflecting silicon dioxide film in the plane in post lens 1 left side, remaining each parts and zero
The annexation of part is identical with embodiment 1.
Embodiment 4
In above example 1～3, the anti-reflection film of vacuum evaporation on the minute surface of the first collimating mirror 3 and the second collimating mirror 5
For silicon dioxide, the number of plies of anti-reflection film is identical with corresponding embodiment.Company's relation of other parts and parts and enforcement
Example 1 is identical.
The operation principle of the present invention is as follows：
Optical amplification chip 4 produces laser with power on, and as seed light, seed light is by optical amplification chip 4 left and right sides
Light-emitting area bring out to the left and penetrate, being shaped to section through the second collimating mirror 5 is oval light beam, incides modeling device 6, passes through
The angle changing modeling device 6 to carry out modeling to seed light.Seed light after modeling incides many ripples LC variable delayer
7, so that many ripples LC variable delayer 7 refractive index is changed by change voltage makes light path postpone, completes laser instrument humorous
The tuning of chamber length of shaking.Completely reflecting mirror 9 is incided by the light of many ripples LC variable delayer 7 and backs into light by original optical path reflection
It is amplified in amplification chip 4, from the right side light-emitting area outgoing of optical amplification chip 4, incident illumination is through first for amplified laser
It is oval laser beam that collimating mirror 3 is shaped to section, laser light incident projection lens 2, concave cylindrical lenses 1 left side plan and total reflection
The reflecting surface of mirror 9 constitutes the resonant external cavity of whole laser instrument, obtains the laser of narrow linewidth.Projection lens 2 left side plan is located at the
It is ensured that laser can effectively be reflected back resonant external cavity, laser enters to inject recessed post after projection lens 2 focal point of one collimating mirror 3
Lens 1, through concave cylindrical lenses 1 shaping outgoing.
Claims (6)
1. a kind of liquid crystal tunes high-power outside cavity gas laser, is machined with light hole, casing (11) in casing (11) left and right sidewall
Bottom middle setting has optical amplification chip (4), and on the left of optical amplification chip (4), light exit direction is provided with the second collimating mirror (5), the right side
Sidelight exit direction be provided with the first collimating mirror (3) it is characterised in that：On the left of second collimating mirror (5), light exit direction is provided with
Modeling device (6), on the left of modeling device (6), light exit direction is provided with many ripples LC variable delayer (7), many ripples LC variable
On the left of delayer (7), light exit direction is provided with condenser lenses (8), and on the left of condenser lenses (8), light exit direction is provided with and is all-trans
Penetrate mirror (9), on the right side of the first collimating mirror (3), light exit direction is provided with projection lens (2), light outgoing side on the right side of projection lens (2)
To being provided with concave cylindrical lenses (1), the top of casing (11) is provided with top cover (10).
2. liquid crystal according to claim 1 tune high-power outside cavity gas laser it is characterised in that：Described completely reflecting mirror
(9) constitute laserresonator with the plane of projection lens (2), the first collimating mirror (3), the second collimating mirror (5) are located at resonance intracavity.
3. liquid crystal according to claim 2 tune high-power outside cavity gas laser it is characterised in that：Described optical amplification chip
(4) on the left of, light-emitting area and right side light-emitting area vacuum replace 6～14 layers of silicon dioxide of evaporation and zirconium dioxide anti-reflection film.
4. liquid crystal according to claim 3 tune high-power outside cavity gas laser it is characterised in that：The first described collimating mirror
(3) and the second collimating mirror (5) is biconvex lens, and the left convex surface of biconvex lens and the radius of curvature of right convex surface are 1～6mm, biconvex
12～18 layers of zirconium dioxide of vacuum evaporation or antireflecting silicon dioxide film on the minute surface of lens；Described modeling device (5) is bandwidth
Less than 100GHz, incisure density be 400～800l/mm transmission grating or transmitance be 85%～95% Fabry-Perot mark
Quasi- tool；The delayed scope of described many ripples LC variable delayer (7) is 60nm～6 λ, and surface vacuum evaporation has 8～16 layer two
Zirconium oxide anti-reflection film, anti-reflection film scope 350～1700nm；Described condenser lenses (8) be biconvex lens, focal length be 10～
20mm, radius of curvature is 5.5mm；Described completely reflecting mirror (9) is plane mirror, and on the minute surface of completely reflecting mirror (9), vacuum replaces and steams
It is coated with 2～8 layers of aluminium sesquioxide and silicon dioxide is all-trans film；Described projection lens (2) are planoconvex lenss, a left side for planoconvex lenss
Side is convex surface, right side is plane, and the radius of curvature of convex surface is 14～18mm, and in the plane on the left of projection lens (2), vacuum replaces
Evaporation 12～20 Afluon (Asta)s and calcium fluoride part reflectance coating or vacuum replace 12～18 layers of silicon dioxide of evaporation and Afluon (Asta) part
Reflectance coating, 8～14 layers of zirconium dioxide of vacuum evaporation and antireflecting silicon dioxide film on the song on the right side of projection lens (2)；Described is recessed
Post lens (1) are planoconcave lenses, and the left side of planoconcave lenses is plane, right side is concave surface, and right side curvature radius is 2～6mm, focal length
For 4～10mm, 8～14 layers of zirconium dioxide of vacuum evaporation and antireflecting silicon dioxide film in the plane on the left of concave cylindrical lenses (1).
5. narrow-line-width high-power external cavity laser according to claim 4 it is characterised in that：The first described collimating mirror
(3) and the second collimating mirror (5) is biconvex lens, and the left convex surface of biconvex lens is identical with the radius of curvature of right convex surface, biconvex lens
Minute surface on 12～18 layers of zirconium dioxide of vacuum evaporation or antireflecting silicon dioxide film.
6. narrow-line-width high-power external cavity laser according to claim 5 it is characterised in that：The first described collimating mirror
(3) and the second collimating mirror (5) is biconvex lens, the left convex surface of the second collimating mirror (5) and the radius of curvature of right convex surface and plated
The material of anti-reflection film is identical with the first collimating mirror (3) with the number of plies.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611083359.5A CN106451072A (en) | 2016-11-30 | 2016-11-30 | Liquid crystal tuned high power external cavity laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611083359.5A CN106451072A (en) | 2016-11-30 | 2016-11-30 | Liquid crystal tuned high power external cavity laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106451072A true CN106451072A (en) | 2017-02-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611083359.5A Pending CN106451072A (en) | 2016-11-30 | 2016-11-30 | Liquid crystal tuned high power external cavity laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114231896A (en) * | 2021-12-16 | 2022-03-25 | 武汉光安伦光电技术有限公司 | Process method for processing ZrAlO film series on cavity surface of semiconductor chip |
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| CN103779784A (en) * | 2014-02-24 | 2014-05-07 | 南京派光信息技术有限公司 | Semiconductor laser unit for measuring Raman spectra |
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| CN114231896A (en) * | 2021-12-16 | 2022-03-25 | 武汉光安伦光电技术有限公司 | Process method for processing ZrAlO film series on cavity surface of semiconductor chip |
| CN114231896B (en) * | 2021-12-16 | 2024-02-20 | 武汉光安伦光电技术有限公司 | Process method for processing ZrAlO film system on cavity surface of semiconductor chip |
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