CN104882786B - Prism and balzed grating, Combined external cavity semiconductor laser - Google Patents
Prism and balzed grating, Combined external cavity semiconductor laser Download PDFInfo
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Abstract
棱镜与闪耀光栅复合外腔半导体激光器属于半导体激光器技术领域。现有窄线宽的外腔半导体激光器器件整体尺寸较大；并且，其外腔长度不能精密调节。在本发明之棱镜与闪耀光栅复合外腔半导体激光器中，激光器位于器件的一端，闪耀光栅位于器件的另一端，消色差准直透镜与激光器的输出端相邻，其特征在于，斯密特棱镜组位于消色差准直透镜、闪耀光栅之间，斯密特棱镜组中的下斯密特棱镜的一个侧镜面与来自消色差准直透镜腔内谐振光垂直，所述下斯密特棱镜的另一个侧镜面与斯密特棱镜组中的上斯密特棱镜的一个侧镜面平行且部分或者全部相对，所述上斯密特棱镜的另一个侧镜面与入射闪耀光栅腔内谐振光垂直，闪耀光栅的入射角等于闪耀角。
The compound external cavity semiconductor laser of prism and blazed grating belongs to the technical field of semiconductor laser. Existing external-cavity semiconductor laser devices with narrow linewidths have a large overall size; moreover, the length of the external cavity cannot be precisely adjusted. In the prism and blazed grating compound external cavity semiconductor laser of the present invention, the laser is located at one end of the device, the blazed grating is located at the other end of the device, and the achromatic collimator lens is adjacent to the output end of the laser. It is characterized in that the Schmidt prism The group is located between the achromatic collimating lens and the blazed grating, and one side mirror surface of the lower Schmidt prism in the Schmidt prism group is perpendicular to the resonant light from the cavity of the achromatic collimating lens, and the lower Schmidt prism The other side mirror is parallel to and partly or completely opposite to one side mirror of the upper Schmidt prism in the Schmidt prism group, and the other side mirror of the upper Schmidt prism is perpendicular to the resonant light in the incident blazed grating cavity, The incident angle of the blazed grating is equal to the blaze angle.
Description
技术领域technical field
本发明涉及一种棱镜与闪耀光栅复合外腔半导体激光器，属于半导体激光器技术领域。The invention relates to a composite external cavity semiconductor laser with a prism and a blazed grating, belonging to the technical field of semiconductor lasers.
背景技术Background technique
外腔半导体激光器以低成本、单纵模、窄线宽、体积小等独特优势在高精度光谱测试、干涉测量、气体探测、大容量数据储存等方面被广泛应用。External cavity semiconductor lasers are widely used in high-precision spectrum testing, interferometry, gas detection, and large-capacity data storage due to their unique advantages such as low cost, single longitudinal mode, narrow linewidth, and small size.
外腔半导体激光器由激光器及外腔构成，因此，其谐振腔包括内腔、外腔两部分。在内腔产生的初始谐振光进入外腔后，由外腔反射镜反射，在内腔、外腔中发生谐振，最后自外腔反射镜输出激光。The external cavity semiconductor laser is composed of a laser and an external cavity. Therefore, its resonant cavity includes two parts: an internal cavity and an external cavity. After the initial resonant light generated in the inner cavity enters the outer cavity, it is reflected by the outer cavity mirror, resonates in the inner cavity and the outer cavity, and finally outputs laser light from the outer cavity mirror.
《激光技术》第28卷第2期刊登的一篇题为“窄线宽的外腔半导体激光器”的文章公开了一种外腔半导体激光器。在激光器1的输出光路光轴上依次排列消色差准直透镜2、分光板3、闪耀光栅4，如图1所示，由两个凹球面反射镜5构成的共焦腔的光路光轴与激光器1的输出光路光轴相交于分光板3，并相互垂直。可见，该方案涉及一种Littrow式外腔半导体激光器，并且，其外腔为共焦腔复合型，这种外腔有助于光束模式的选择。该方案的目的是获得窄线宽，同时也获得了良好的稳频效果。由于其外腔从激光器1输出端面到闪耀光栅4这一段的长度达到6cm，同时，该长度同时也是该外腔半导体激光器的外腔长度，因此，如果为了进一步提高外腔半导体激光器的单模性，进一步减小线宽，这一长度还要增加，这使得器件整体尺寸明显增大，并且，这一长度也难以大幅增加。再有，该外腔半导体激光器的外腔长度不能精密调节，因此，无法在窄线宽内精确确定出射光中心波长。An article entitled "External Cavity Semiconductor Laser with Narrow Linewidth" published in Volume 28, Issue 2 of "Laser Technology" discloses an external cavity semiconductor laser. On the optical axis of the output optical path of the laser 1, the achromatic collimating lens 2, the beam splitter 3, and the blazed grating 4 are arranged in sequence, as shown in Figure 1, the optical axis of the optical path of the confocal cavity formed by two concave spherical mirrors 5 is aligned with the The optical axis of the output optical path of the laser 1 intersects with the beam splitter 3 and is perpendicular to each other. It can be seen that this solution involves a Littrow-type external cavity semiconductor laser, and its external cavity is a confocal cavity compound type, and this external cavity is helpful for the selection of the beam mode. The purpose of this solution is to obtain a narrow line width, but also obtain a good frequency stabilization effect. Since the length of the external cavity from the output end face of the laser 1 to the blazed grating 4 is 6 cm, and this length is also the external cavity length of the external cavity semiconductor laser, if in order to further improve the single-mode property of the external cavity semiconductor laser , further reducing the line width, this length will increase, which makes the overall size of the device significantly increased, and it is difficult to increase this length significantly. Furthermore, the length of the external cavity of the external cavity semiconductor laser cannot be precisely adjusted, so the central wavelength of the outgoing light cannot be accurately determined within a narrow line width.
发明内容Contents of the invention
为了能够精密调节外腔半导体激光器的外腔长度、同时还能够减小器件整体尺寸，我们发明了一种棱镜与闪耀光栅复合外腔半导体激光器。In order to precisely adjust the length of the external cavity of the external cavity semiconductor laser and reduce the overall size of the device, we invented a compound external cavity semiconductor laser with prism and blazed grating.
在本发明之棱镜与闪耀光栅复合外腔半导体激光器中，激光器1位于器件的一端，闪耀光栅4位于器件的另一端，消色差准直透镜2与激光器1的输出端相邻，其特征在于，斯密特棱镜组位于消色差准直透镜2、闪耀光栅4之间，如图2所示，斯密特棱镜组中的下斯密特棱镜6的一个侧镜面与来自消色差准直透镜2腔内谐振光垂直，所述下斯密特棱镜6的另一个侧镜面与斯密特棱镜组中的上斯密特棱镜7的一个侧镜面平行且部分或者全部相对，所述上斯密特棱镜7的另一个侧镜面与入射闪耀光栅4腔内谐振光垂直，闪耀光栅4的入射角等于闪耀角。In the prism and blazed grating composite external cavity semiconductor laser of the present invention, the laser 1 is located at one end of the device, the blazed grating 4 is located at the other end of the device, and the achromatic collimator lens 2 is adjacent to the output end of the laser 1, and the features are: The Schmidt prism group is positioned between the achromatic collimator lens 2 and the blazed grating 4, as shown in Figure 2, a side mirror surface of the lower Schmidt prism 6 in the Schmidt prism group is connected with the achromatic collimator lens 2 The resonant light in the cavity is vertical, and the other side mirror surface of the lower Schmidt prism 6 is parallel to and partly or completely opposite to one side mirror surface of the upper Schmidt prism 7 in the Schmidt prism group. The other side mirror surface of the prism 7 is perpendicular to the incident resonant light in the cavity of the blazed grating 4, and the incident angle of the blazed grating 4 is equal to the blaze angle.
本发明其技术效果在于，本发明在外腔半导体激光器的外腔中设置斯密特棱镜组，它与闪耀光栅4构成一个复合型外腔，腔内谐振光每经过一次斯密特棱镜组，就会在斯密特棱镜组中的下斯密特棱镜6、上斯密特棱镜7内被各自的三个镜面依次各反射一次，这使得腔内谐振光的光程大幅增加，外腔腔长则因此得到大幅延长。在这一优势下，器件整体尺寸完全可以适当减小，使器件更加小型化。例如，现有窄线宽的外腔半导体激光器从激光器1输出端面到闪耀光栅4这一段的长度达到6cm，而本发明可将这一长度缩短至3～4cm。Its technical effect of the present invention is, the present invention arranges Schmidt prism group in the external cavity of external cavity semiconductor laser, and it forms a compound type external cavity with blazed grating 4, every time the resonant light in the cavity passes through Schmidt prism group, just The lower Schmidt prism 6 and the upper Schmidt prism 7 in the Schmidt prism group will be reflected once by each of the three mirrors in turn, which greatly increases the optical path of the resonant light in the cavity, and the length of the external cavity is thus greatly extended. Under this advantage, the overall size of the device can be appropriately reduced to make the device more miniaturized. For example, the length from the output end face of the laser 1 to the blazed grating 4 of the existing narrow-linewidth external-cavity semiconductor laser reaches 6 cm, but the present invention can shorten this length to 3-4 cm.
本发明其技术效果还在于，根据斯密特棱镜组的光学特点，当构成斯密特棱镜组的两个斯密特棱镜其两个相对且平行的侧镜面彼此沿平行方向相向或者相离运动，斯密特棱镜组内部光程则因此而改变。基于这一点，当辅以精密机械位移机构，使斯密特棱镜组中的某一个斯密特棱镜精密移动，即可精密调节外腔半导体激光器的外腔长度，才从而实现了在窄线宽内精确确定出射光中心波长的目的。Its technical effect of the present invention also is, according to the optical characteristic of Schmidt prism group, when its two opposite and parallel side mirror surfaces of two Schmidt prisms that constitute Schmidt prism group move toward or move away from each other along parallel direction , the internal optical path of the Schmidt prism group changes accordingly. Based on this, when supplemented by a precise mechanical displacement mechanism, one of the Schmidt prisms in the Schmitt prism group can be precisely moved, and the length of the external cavity of the external cavity semiconductor laser can be precisely adjusted, thus realizing the narrow linewidth The purpose of accurately determining the center wavelength of the outgoing light.
附图说明Description of drawings
图1为现有窄线宽的外腔半导体激光器结构示意图。图2为本发明之棱镜与闪耀光栅复合外腔半导体激光器结构示意图，该图同时作为摘要附图。图3为采用斯密特屋脊棱镜的本发明之棱镜与闪耀光栅复合外腔半导体激光器结构示意图。FIG. 1 is a schematic structural diagram of an existing external cavity semiconductor laser with a narrow linewidth. Fig. 2 is a schematic diagram of the structure of the prism and blazed grating composite external cavity semiconductor laser of the present invention, which is also used as a summary drawing. Fig. 3 is a schematic diagram of the structure of the prism and blazed grating compound external cavity semiconductor laser of the present invention using the Schmidt roof prism.
具体实施方式Detailed ways
在本发明之棱镜与闪耀光栅复合外腔半导体激光器中，激光器1位于器件的一端，闪耀光栅4位于器件的另一端，消色差准直透镜2与激光器1的输出端相邻。斯密特棱镜组位于消色差准直透镜2、闪耀光栅4之间，如图2所示。斯密特棱镜组中的下斯密特棱镜6的一个侧镜面与来自消色差准直透镜2腔内谐振光垂直。所述下斯密特棱镜6的另一个侧镜面与斯密特棱镜组中的上斯密特棱镜7的一个侧镜面平行且部分或者全部相对，在所述两个平行且部分或者全部相对的侧镜面之间为厚度小于0.5mm的空气层。所述上斯密特棱镜7的另一个侧镜面与入射闪耀光栅4腔内谐振光垂直。闪耀光栅4的入射角等于闪耀角。所述下斯密特棱镜6和上斯密特棱镜7均为斯密特三棱镜或者均为斯密特屋脊棱镜，如图3所示，斯密特屋脊棱镜的采用能够将从激光器1输出端面到闪耀光栅4这一段的长度进一步缩短1cm。闪耀光栅4为金属基底母刻光栅，这种光栅能够承受高功率激光束。In the prism and blazed grating compound external cavity semiconductor laser of the present invention, the laser 1 is located at one end of the device, the blazed grating 4 is located at the other end of the device, and the achromatic collimator lens 2 is adjacent to the output end of the laser 1 . The Schmidt prism group is located between the achromatic collimator lens 2 and the blazed grating 4, as shown in FIG. 2 . One side mirror surface of the lower Schmidt prism 6 in the Schmidt prism group is perpendicular to the resonant light from the cavity of the achromatic collimator lens 2 . The other side mirror surface of the lower Schmidt prism 6 is parallel to and partly or completely opposite to one side mirror surface of the upper Schmitt prism 7 in the Schmitt prism group. Between the side mirrors is an air layer with a thickness less than 0.5mm. The other side mirror surface of the upper Schmidt prism 7 is perpendicular to the incident resonant light in the cavity of the blazed grating 4 . The incident angle of the blazed grating 4 is equal to the blaze angle. The lower Schmidt prism 6 and the upper Schmidt prism 7 are all Schmidt prisms or Schmidt roof prisms, as shown in Figure 3, the adoption of the Schmidt roof prism can output the end face from the laser 1 The length to the blazed grating 4 is further shortened by 1 cm. The blazed grating 4 is a master-engraved grating on a metal substrate, and this grating can withstand high-power laser beams.
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| SU1645925A1 (en) * | 1989-04-19 | 1991-04-30 | Ленинградский Институт Точной Механики И Оптики | Binocular instrument optical system |
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