CN104882786B - Prism and balzed grating, Combined external cavity semiconductor laser - Google Patents
Prism and balzed grating, Combined external cavity semiconductor laser Download PDFInfo
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- CN104882786B CN104882786B CN201510267907.9A CN201510267907A CN104882786B CN 104882786 B CN104882786 B CN 104882786B CN 201510267907 A CN201510267907 A CN 201510267907A CN 104882786 B CN104882786 B CN 104882786B
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Abstract
Prism belongs to semiconductor laser field with balzed grating, Combined external cavity semiconductor laser.The ECLD device overall dimensions of existing narrow linewidth are larger；Also, its external cavity length is unable to fine adjustment.In the prism and balzed grating, Combined external cavity semiconductor laser of the present invention, laser is located at one end of device, balzed grating, is located at the other end of device, achromatism collimation lens is adjacent with the output end of laser, it is characterized in that, Schmitt prism group is located at achromatism collimation lens, between balzed grating, one side mirror face of the lower Schmitt prism in Schmitt prism group is vertical with from achromatism collimation lens intracavitary harmonic light, another side mirror face of the lower Schmitt prism is parallel with a side mirror face of the upper Schmitt prism in Schmitt prism group and some or all of relative, another side mirror face of the upper Schmitt prism is vertical with incident balzed grating, intracavitary harmonic light, the incidence angle of balzed grating, is equal to blaze angle.
Description
Technical field
The present invention relates to a kind of prism and balzed grating, Combined external cavity semiconductor laser, belong to semiconductor laser technology
Field.
Background technology
ECLD is surveyed with unique advantages such as low cost, single longitudinal mode, narrow linewidth, small volumes in high-precision spectrum
Examination, interferometry, detection of gas, Large Volume Data storage etc. are widely used.
ECLD is made up of laser and exocoel, and therefore, its resonator includes inner chamber, exocoel two parts.
After initial resonant light caused by inner chamber enters exocoel, reflected by outer resonant reflec-tors, resonance occurs in inner chamber, exocoel, finally
Laser is exported from outer resonant reflec-tors.
《Laser technology》The article of one entitled " ECLD of narrow linewidth " that the 2nd periodical of volume 28 is stepped on is public
A kind of ECLD is opened.Achromatism collimation lens 2 is arranged in order on the output light path optical axis of laser 1, is divided
Tabula rasa 3, balzed grating, 4, as shown in figure 1, the light path light axis for the confocal cavity being made up of two concave spherical mirrors 5 and laser 1
Output light path optical axis intersect at beam-splitter 3, and be mutually perpendicular to.It can be seen that the program is related to a kind of Littrow formulas cavity semiconductor
Laser, also, its exocoel is that confocal cavity is compound, this exocoel contributes to the selection of beam mode.The purpose of the program is
Narrow linewidth is obtained, while also obtain good frequency stabilization effect.Because its exocoel is from the output end face of laser 1 to balzed grating, 4
The length of this section reaches 6cm, meanwhile, the length is also the external cavity length of the ECLD simultaneously, therefore, if
In order to further improve the unimodality of ECLD, further reduce line width, this length will also increase, and this causes
Device overall dimensions significantly increase, also, this length is also difficult to be significantly increased.Further, the ECLD is outer
Cavity length is unable to fine adjustment, therefore, it is impossible to which accurate in narrow linewidth determine outgoing center wavelength of light.
The content of the invention
External cavity length in order to fine adjustment ECLD while device entirety chi can also be reduced
Very little, we have invented a kind of prism and balzed grating, Combined external cavity semiconductor laser.
In the prism and balzed grating, Combined external cavity semiconductor laser of the present invention, laser 1 is located at one end of device,
Balzed grating, 4 is located at the other end of device, and achromatism collimation lens 2 is adjacent with the output end of laser 1, it is characterised in that this
Close special prism group is between achromatism collimation lens 2, balzed grating, 4, as shown in Fig. 2 this is close for lower in Schmitt prism group
One side mirror face of special prism 6 with from the intracavitary harmonic light of achromatism collimation lens 2 it is vertical, the lower Schmitt prism 6 it is another
One side mirror face is parallel with a side mirror face of the upper Schmitt prism 7 in Schmitt prism group and some or all of relative,
Another side mirror face of the upper Schmitt prism 7 is vertical with the incident intracavitary harmonic light of balzed grating, 4, the incidence of balzed grating, 4
Angle is equal to blaze angle.
The present invention it has technical effect that, the present invention sets Schmitt prism in the exocoel of ECLD
Group, it forms a compound exocoel with balzed grating, 4, and intracavitary harmonic light often passes through a Schmitt prism group, will be at this
Respectively reflected once successively by respective three minute surfaces in lower Schmitt prism 6, upper Schmitt prism 7 in close special prism group, this
So that the light path of intracavitary harmonic light is significantly increased, therefore outer cavity length is then significantly extended.Under this advantage, device is overall
Size can suitably reduce completely, device is more minimized.For example, the ECLD of existing narrow linewidth is from laser
The length of the output end face of device 1 to this section of balzed grating, 4 reaches 6cm, and the present invention can be by this contraction in length to 3~4cm.
Its technique effect of the invention also resides in, according to the optical characteristics of Schmitt prism group, when composition Schmitt prism group
Two relative and parallel side mirror face of two Schmitt prisms it is opposite or mutually from moving along parallel direction each other, Schmitt
Inside prism group therefore light path then changes.Based on this point, when being aided with precision optical machinery displacement mechanism, make in Schmitt prism group
Some Schmitt prism it is accurate mobile, you can the external cavity length of fine adjustment ECLD, just so as to realizing
The accurate purpose for determining outgoing center wavelength of light in narrow linewidth.
Brief description of the drawings
Fig. 1 is the ECLD structural representation of existing narrow linewidth.Fig. 2 is the prism of the present invention with glaring
Grid Combined external cavity semiconductor laser structural representation, the figure are used as Figure of abstract simultaneously.Fig. 3 is using Schmitt roof prism
The present invention prism and balzed grating, Combined external cavity semiconductor laser structural representation.
Embodiment
In the prism and balzed grating, Combined external cavity semiconductor laser of the present invention, laser 1 is located at one end of device,
Balzed grating, 4 is located at the other end of device, and achromatism collimation lens 2 is adjacent with the output end of laser 1.Schmitt prism group position
Between achromatism collimation lens 2, balzed grating, 4, as shown in Figure 2.One of lower Schmitt prism 6 in Schmitt prism group
Side mirror face is vertical with from the intracavitary harmonic light of achromatism collimation lens 2.Another side mirror face of the lower Schmitt prism 6 and this
One side mirror face of the upper Schmitt prism 7 in close special prism group is parallel and some or all of relative, described two parallel
And it is less than 0.5mm air layer between some or all of relative side mirror face for thickness.The upper Schmitt prism 7 it is another
Individual side mirror face is vertical with the incident intracavitary harmonic light of balzed grating, 4.The incidence angle of balzed grating, 4 is equal to blaze angle.This is close under described
Special prism 6 and upper Schmitt prism 7 are Schmitt prism or are Schmitt roof prism, as shown in figure 3, Schmitt
Length from the output end face of laser 1 to balzed grating, 4 this section can further be shortened 1cm by the use of roof prism.Dodge
Grating 4 of shining, which is that metallic substrates are female, carves grating, and this grating can bear high-power laser beam.
Claims (4)
1. a kind of prism and balzed grating, Combined external cavity semiconductor laser, laser (1) are located at one end of device, balzed grating,
(4) it is located at the other end of device, achromatism collimation lens (2) is adjacent with the output end of laser (1), it is characterised in that this is close
Special prism group is located between achromatism collimation lens (2), balzed grating, (4), the lower Schmitt prism (6) in Schmitt prism group
A side mirror face with from achromatism collimation lens (2) intracavitary harmonic light it is vertical, the lower Schmitt prism (6) another
Side mirror face is parallel with a side mirror face of the upper Schmitt prism (7) in Schmitt prism group and some or all of relative, institute
It is vertical with incident balzed grating, (4) intracavitary harmonic light to state another side mirror face of Schmitt prism (7), balzed grating, (4)
Incidence angle is equal to blaze angle；
Make lower Schmitt prism (6), two of upper Schmitt prism (7) it is relative and parallel side mirror face is each other along parallel direction phase
To or mutually from motion, the external cavity length of fine adjustment ECLD, accurately determined in narrow linewidth in emergent light
Cardiac wave is grown.
2. prism according to claim 1 and balzed grating, Combined external cavity semiconductor laser, it is characterised in that described
It is less than 0.5mm air layer between two parallel and some or all of relative side mirror faces for thickness.
3. prism according to claim 1 and balzed grating, Combined external cavity semiconductor laser, it is characterised in that under described
Schmitt prism (6) and upper Schmitt prism (7) are Schmitt prism or are Schmitt roof prism.
4. prism according to claim 1 and balzed grating, Combined external cavity semiconductor laser, it is characterised in that glare
Grid (4), which are that metallic substrates are female, carves grating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510267907.9A CN104882786B (en) | 2015-05-22 | 2015-05-22 | Prism and balzed grating, Combined external cavity semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510267907.9A CN104882786B (en) | 2015-05-22 | 2015-05-22 | Prism and balzed grating, Combined external cavity semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104882786A CN104882786A (en) | 2015-09-02 |
| CN104882786B true CN104882786B (en) | 2018-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510267907.9A Active CN104882786B (en) | 2015-05-22 | 2015-05-22 | Prism and balzed grating, Combined external cavity semiconductor laser |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565669A (en) * | 2017-12-13 | 2018-09-21 | 长春理工大学 | A kind of seed signal light pulse cutter device based on acousto-optic modulator master oscillation power amplification structure |
| CN114967131B (en) * | 2022-07-28 | 2022-10-18 | 北京弋宸时代科技有限公司 | Self-calibration multi-optical-axis imaging system with wave front shaping function and imaging method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1645925A1 (en) * | 1989-04-19 | 1991-04-30 | Ленинградский Институт Точной Механики И Оптики | Binocular instrument optical system |
| DE19830710A1 (en) * | 1997-08-01 | 1999-02-04 | Zeiss Carl Fa | Endoscopic video camera |
| EP1930760A1 (en) * | 2006-12-07 | 2008-06-11 | Swarovski-Optik KG | Compact telescope with image erecting prism |
| CN104597600A (en) * | 2015-02-28 | 2015-05-06 | 青岛奥美克医疗科技有限公司 | Compact-structure Kepler optical system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003222802A (en) * | 2002-01-29 | 2003-08-08 | Fuji Photo Optical Co Ltd | Optical apparatus for observation |
-
2015
- 2015-05-22 CN CN201510267907.9A patent/CN104882786B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1645925A1 (en) * | 1989-04-19 | 1991-04-30 | Ленинградский Институт Точной Механики И Оптики | Binocular instrument optical system |
| DE19830710A1 (en) * | 1997-08-01 | 1999-02-04 | Zeiss Carl Fa | Endoscopic video camera |
| EP1930760A1 (en) * | 2006-12-07 | 2008-06-11 | Swarovski-Optik KG | Compact telescope with image erecting prism |
| CN104597600A (en) * | 2015-02-28 | 2015-05-06 | 青岛奥美克医疗科技有限公司 | Compact-structure Kepler optical system |
Non-Patent Citations (1)
| Title |
|---|
| 窄线宽的外腔半导体激光器;江鹏飞 等;《激光技术》;20040325;第28卷(第2期);160-161 * |
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| CN104882786A (en) | 2015-09-02 |
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