CN101930117B - Grating external-cavity semiconductor laser and Fabry-Perot cavity - Google Patents
Grating external-cavity semiconductor laser and Fabry-Perot cavity Download PDFInfo
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- CN101930117B CN101930117B CN200910087910.7A CN200910087910A CN101930117B CN 101930117 B CN101930117 B CN 101930117B CN 200910087910 A CN200910087910 A CN 200910087910A CN 101930117 B CN101930117 B CN 101930117B
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Abstract
The invention discloses an external-cavity semiconductor laser and a Fabry-Perot cavity. In the invention, a single circular F-P cavity is arranged between a semiconductor laser tube and a grating; lights transmitted from the semiconductor laser tube come through the point A on the input surface of the single circular F-P cavity into the F-P cavity; after reflecting in a first reflecting surface, the lights reach the point C on a second reflecting surface; after reflected by the second reflecting surface in which the point C is arranged, the lights return back to the point A; and as emergent lights of the F-P cavity, transmission lights from the point B are fed back to the semiconductor laser tube by the semiconductor laser tube. The invention does not use a complicated, large and expensive feedback lock electronic system inside and outside the cavity, and achieves the narrow line width output, wherein the spectral line width of the grating external-cavity semiconductor laser is less than 100 kHz. The frequency of the laser is more stable, easy to tune and control.
Description
Technical field
The present invention relates to semiconductor laser field, refer to especially a kind of grating external cavity semiconductor laser and Fabry-Perot (F-P) chamber that uses high-fineness monolithic to carry out modeling.
Background technology
Fabry-Perot (F-P) chamber is the important tool in optics and laser research.The transmitted light in annular F-P chamber has the spectral composition identical with F-P chamber, and narrow linewidth light feedback can be provided.Current annular F-P chamber is made up of discrete component.The structure that for example Yabai He and Brian J.Orr proposes, as shown in Figure 1, three catoptrons of Ring filter form equivalent F-P chamber.And the interference that is easily subject to external audio, mechanical vibration and temperature variation and the impact in discrete component F-P chamber, the volume ratio in chamber is larger, and the stability of system is poor.
Summary of the invention
In view of this, the object of the invention is to propose a kind of external-cavity semiconductor laser and F-P chamber, realize the narrow linewidth of stable output, solve the folding F-P of discrete component chamber stability bad simultaneously, be vulnerable to external interference, the problems such as the excessive and system complex of volume.
Based on above-mentioned purpose a kind of Fabry-Perot F-P provided by the invention chamber, described F-P is made up of monolithic optical material in chamber, at least includes three optical surfaces in light path;
Light enters to inject F-P chamber from input face, after at least two reflecting surface reflections, gets back to the incidence point of input face; And the emergent light from the transmitted light of one of them reflecting surface as this F-P chamber.
Optionally, described F-P chamber includes three optical surfaces: light enters to inject F-P chamber from input face, through after the first reflecting surface reflection, arrives the second reflecting surface, gets back to the incidence point of input face after the second reflecting surface reflection; And the emergent light from the transmitted light of reflecting surface as this F-P chamber, the described transmitted light from the first reflecting surface is as the emergent light in this F-P chamber.
Optionally, described F-P chamber is isosceles trapezoid hexahedron en-block construction, and the described plane of incidence and the first reflecting surface are two trapezoidal waist place faces, and described the second reflecting surface is the trapezoidal place face of going to the bottom;
Or pentahedron structure, place, three limits of equilateral triangle type plane is as described optical surface.
Optionally, when described F-P chamber is isosceles trapezoid hexahedron en-block construction, the described plane of incidence and the second reflecting surface angle are 66.42 °.
Optionally, the described F-P chamber plane of incidence utilizes optical coating technology to be coated with the reflectance coating of suitable reflectivity Ra, and described the first reflection is indicated as high reflecting surface, this surface high reflectance Rb=Ra; Described the second reflection is indicated as fully reflecting surface.
Optionally, described F-P chamber plane of incidence reflectivity Ra=0.9 to 0.99.
Optionally, the optical surface in described F-P chamber is micro-convex-surface type or is plane;
Or the optical surface in described F-P chamber is the combination of plane and the combination of dimpling face or dimpling and plane and nick face.
Also provide a kind of grating external cavity semiconductor laser based on above-mentioned purpose the present invention, having comprised: between semiconductor laser tube and grating, be provided with above-mentioned single-block annular F-P chamber;
And the laying of each parts makes the light sending from semiconductor laser tube enter to inject single-block annular F-P chamber from the input face in single-block annular F-P chamber in semiconductor laser, after at least two reflecting surface reflections, get back to the incidence point of input face; And returned semiconductor laser tube as the emergent light in this F-P chamber by described grating feedback from the transmitted light of one of them reflecting surface.
Optionally, described semiconductor laser includes one or more combinations in following conditioning equipment:
The conditioning equipment in single-block annular F-P chamber, the resonance frequency that regulates single-block annular F-P chamber to determine by changing the inside light path in single-block annular F-P chamber; Or by rotation single-block annular F-P chamber, change the angle of incident ray, emergent ray;
The conditioning equipment of exocoel, regulates laser frequency by change grating external-cavity length, optical property;
The conditioning equipment of semiconductor laser tube, changes semiconductor laser tube output light frequency scope by changing the input current of semiconductor laser tube; Or change semiconductor laser tube output light frequency scope by changing the temperature of semiconductor laser tube.
Optionally, the exocoel conditioning equipment of described semiconductor laser, comprising: the laser oscillation frequency that the angle of diffraction that is incident to the diffraction light in single-block annular F-P chamber by change regulates frequency selecting by grating to determine; Or by changing grating to single-block annular F-P chamber or grating regulates the equipment of the laser oscillation frequency of frequency selecting by grating decision to the distance of semiconductor laser tube.
Optionally, the conditioning equipment in the F-P chamber of described semiconductor laser comprises following one or more combination:
Bonding piezoelectric ceramics on described single-block annular F-P chamber, carries out the fine tuning among a small circle fast of F-P chamber resonance frequency;
Be arranged at the temperature control device in described single-block annular F-P chamber, carry out the coarse adjustment on a large scale at a slow speed of F-P chamber resonance frequency;
Be arranged at described single-block annular F-P chamber micrometer adjusting screw or piezoelectric ceramics, for changing the feedback angle to grating in single-block annular F-P chamber;
The conditioning equipment of described exocoel comprises following one or more combination:
For the aspheric collimation lens adjustment rack of fixing aspheric collimation lens and carrying out the adjustment of laser beam datum;
For adjusting the regulating device of grating angle;
The conditioning equipment of described semiconductor laser tube comprises following one or more combination:
Semiconductor laser tube is heat sink, by changing the temperature of semiconductor laser tube, changes semiconductor laser tube output light frequency scope.
Optionally, this semiconductor laser is Littrow structure fringe outside cavity gas laser; Or Littman structure fringe outside cavity gas laser; Or plunder diffraction structure grating outside cavity gas laser.
As can be seen from above, external-cavity semiconductor laser provided by the invention and F-P chamber, the laser instrument that adopts monolithic resonator cavity to form, by single-block annular F-P chamber is joined between semiconductor laser tube and grating, without the feedback locking electronic system of the complicated huge costliness in inside and outside of cavity, realize the narrow-linewidth laser output that grating external cavity semiconductor laser line width is less than 100kHz, and the frequency of laser instrument is more stable, easily tuning and control.
Brief description of the drawings
Fig. 1 is the discrete component annular F-P chamber schematic diagram that existing Yabai He and Brian J.Orr adopts;
Fig. 2 is the single-block annular F-P chamber schematic diagram of first embodiment of the invention;
Fig. 3 is the single-block annular F-P chamber schematic diagram of second embodiment of the invention;
Fig. 4 is the outside cavity gas laser schematic diagram of embodiment of the present invention monolithic block application at Littrow structure fringe;
Fig. 5 is the outside cavity gas laser schematic diagram of embodiment of the present invention monolithic block application at Littman structure fringe;
Fig. 6 is that embodiment of the present invention monolithic block application is in the outside cavity gas laser schematic diagram of plunderring diffraction structure grating;
Fig. 7 is the embodiment of the present invention strengthens external-cavity semiconductor laser schematic diagram with the single-block annular F-P chamber of the Littrow diffraction structure grating of adjustment member.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
For solving the problem of prior art, the present invention proposes a kind of single-block annular F-P chamber, be made up of monolithic optical material in this F-P chamber, at least includes three optical surfaces in light path;
Light enters to inject F-P chamber from input face, through after the first reflecting surface reflection, arrives the second reflecting surface, gets back to the incidence point of input face after the second reflecting surface reflection; And the emergent light from the transmitted light of reflecting surface as this F-P chamber.
The structure in the single-block annular F-P chamber of one embodiment of the invention, as shown in Figure 2.A is the beam reflection point of one end, annular F-P chamber, (perpendicular to the paper) plane at A point place doubles as single-block annular F-P chamber output coupling surface as input face simultaneously, (perpendicular to the paper) plane at B place is high reflecting surface, and (perpendicular to the paper) plane at C place is fully reflecting surface.
The A of light from input face clicks and enters and injects annular F-P chamber, after B point reflection on the reflecting surface that is coated with highly reflecting films, to C point, gets back to A point after the plane total reflection at C point place, forms ring cavity.The transmitted light that its B is ordered is returned semiconductor laser tube by grating feedback, because monolithic F-P chamber has better frequency-selecting effect, the frequency-selecting effect of whole grating external-cavity is greatly strengthened, and the frequency noise that its effect shows as laser generation is further compressed, thereby realizes narrowing of laser linewidth.
In preferred embodiment of the present invention, single-block annular F-P chamber can utilize the optical quartz glass of low transmission loss as material.For the single-block annular F-P chamber shown in Fig. 2, can process the trapezoidal hexahedron en-block construction form that makes its formation comprise 3 optical surfaces by optics.This prismatoid base length 15mm, trapezoidal lateral length of side 12mm, thickness is 6mm.In 2 optical surfaces on these 6 bodies, A point place surface is input and output coupling surface, and this surface is plane, utilizes optical coating technology to be coated with the reflectance coating of suitable reflectivity Ra, for example reflectivity Ra=0.9 to 0.99.The surface at A point place forms separately the two ends reflecting surface in equivalent F-P chamber.This surface can be plane, and B point place plane is high reflecting surface, and this surface high reflectance Rb=Ra is identical with the reflectivity of A point place plane.C point place plane is fold plane, and not plated film of this face is realized the folding of light beam by inner total reflection principle.The surperficial angle at A point and C point place is 66.42 °.The angle tolerance of 90 ° and the poor strict guarantee that obtains of tower of 3 optical surfaces in optics processing.
In another embodiment of the present invention, the structure in single-block annular F-P chamber can adopt the equilateral triangle type pentahedron version of three optical surfaces, as shown in Figure 3.A is the beam reflection point of one end, annular F-P chamber, (perpendicular to the paper) plane at A point place doubles as single-block annular F-P chamber output coupling surface as input face simultaneously, (perpendicular to the paper) plane at B place is high reflecting surface, and (perpendicular to the paper) plane at C place is fully reflecting surface.
The design parameter of triangular form pentahedron version is exemplified below:
Incide 49.3 ° of the incident angles of monolithic crystal, long 12 × 12 × 12mm of design crystal
3, each interior angle is 60 °.
Single-block annular F-P of the present invention chamber is except making the trapezoidal hexahedron structure of three optical surfaces as shown in Figure 2, and beyond the triangular form pentahedron structure shown in Fig. 3, can also make other shapes, also must be not necessarily the symmetrical structure of equilateral or isogonism, also can be formed by three above optical surfaces, for example except the plane of incidence, also include three, four or more reflecting surface, just passable as long as forming annular resonance in inside.
In the present invention, the optical surface in described single-block annular F-P chamber, except being plane, can also be micro-convex-surface type; Or the optical surface in described F-P chamber is the combination of plane and the combination of dimpling face or dimpling and plane and nick face.
The resonance frequency that single-block annular F-P chamber determines can realize respectively fast fine tuning among a small circle and coarse adjustment on a large scale at a slow speed by bonding piezoelectric ceramics method and temperature control technique, realize the tuning of laser frequency and control, and the laser oscillation frequency that frequency selecting by grating determines can be realized by unitary rotation single-block annular F-P chamber.For example change the angle in monolithic F-P chamber by micrometer adjusting screw or other piezoelectric ceramics.Through these approach, the laser frequency that frequency selecting by grating can be determined approaches consistent with the laser frequency furnishing that monolithic F-P chamber determines.Utilize the physical mechanism of laser generation, make to produce laser generation in the resonance frequency in monolithic F-P chamber, and can be by adjusting monolithic temperature and being bonded in the piezoelectric ceramic piece adjustment control laser frequency on monolithic.And can arrange piezoelectric ceramics voltage or the fine setting set screw of rotating in single-block annular F-P chamber by change and realize the tracking of grating external-cavity to single-block annular F-P chamber frequency or synchronous.
The grating external cavity semiconductor laser that the present invention proposes, mainly comprises: semiconductor laser tube, grating and single-block annular F-P chamber;
Above-mentioned single-block annular F-P chamber is set between semiconductor laser tube and grating; And in semiconductor laser, the laying of each parts makes the light sending from semiconductor laser tube enter to inject F-P chamber from the input face in single-block annular F-P chamber, through after the first reflecting surface reflection, arrive the second reflecting surface, after the second reflecting surface reflection, get back to the incidence point of input face; And returned semiconductor laser tube as the emergent light in this F-P chamber by described grating feedback from the transmitted light of reflecting surface.
Below several optional embodiments:
Shown in Figure 4, for adopting the Littrow structure fringe outside cavity gas laser in single-block annular F-P of the present invention chamber, comprising: semiconductor laser tube (LD) 1, collimation lens (AL) 3,1/2 wave plate (HW) 401, diffraction grating (GT) 14 and single-block annular F-P chamber 5.Wherein, the effect that adds 1/2 wave plate 401 is here to change the light intensity that feeds back to semiconductor laser tube 1, selects suitable feedback with this.
The light beam that semiconductor laser tube 1 is launched enters single-block annular F-P chamber 5 after collimation lens 3 collimations and 1/2 wave plate 401, after annular reflection resonance, most light is through the transmission of the B in single-block annular F-P chamber 5 point, incide on diffraction grating 14, its first-order diffraction is returned as the former road of feedback light, the refract light penetrating from A point entering behind single-block annular F-P chamber 5 feeds back to semiconductor laser tube 1, realizes modeling with this.
Shown in Figure 5, for adopting the Littman structure fringe outside cavity gas laser in single-block annular F-P of the present invention chamber, comprising: semiconductor laser tube (LD) 1, collimation lens (AL) 3,1/2 wave plate (HW) 401, diffraction grating (GT) 14, catoptron 501 and single-block annular F-P chamber 5.
The light beam that semiconductor laser tube 1 is launched enters single-block annular F-P chamber 5 after collimation lens 3 collimations and 1/2 wave plate 401, after annular reflection resonance, most light is through the transmission of the B in single-block annular F-P chamber 5 point, incide on diffraction grating 14, the catoptron 501Yuan road that its first-order diffraction light is reflected by height is reflected back diffraction grating 14, the first-order diffraction Guang Yuan road forming is returned, the refract light penetrating from A point entering behind single-block annular F-P chamber 5 feeds back to semiconductor laser tube 1, realizes modeling with this.
Shown in Figure 6, single-block annular F-P of the present invention chamber is applied to the previous structural representation of plunderring diffraction structure grating outside cavity gas laser (Chinese patent application that the application number that the applicant submitted on May 12nd, 2008 is " grating diffraction external cavity semiconductor laser " for " 200810097085.4 " denomination of invention) proposing of the applicant.Comprise: semiconductor laser tube (LD) 1, collimation lens (AL) 3,1/2 wave plate (HW) 401, diffraction grating (GT) 14, catoptron 501 and single-block annular F-P chamber 5.
The light beam that semiconductor laser tube 1 is launched enters single-block annular F-P chamber 5 after collimation lens 3 collimations and 1/2 wave plate 401, after annular reflection resonance, most light is through the transmission of the B in single-block annular F-P chamber 5 point, incide on diffraction grating 14, the incident angle that wherein incides light beam on diffraction grating 14 is less than diffraction grating 14 first-order diffraction diffraction of light angles, the catoptron 501Yuan road that its first-order diffraction light is reflected by height is reflected back diffraction grating 14, the first-order diffraction Guang Yuan road forming is returned, the refract light penetrating from A point entering behind single-block annular F-P chamber 5 feeds back to semiconductor laser tube 1, realize modeling with this.
In semiconductor laser provided by the invention, various conditioning equipments can also be set, mainly comprise several as follows:
The conditioning equipment in F-P chamber, the resonance frequency that regulates single-block annular F-P chamber to determine by changing the inside light path in single-block annular F-P chamber; Or by rotation single-block annular F-P chamber, change the angle of incident ray, emergent ray;
The conditioning equipment of exocoel, regulates laser frequency by changing grating external-cavity length, optical property etc., for example: the angle of diffraction that is incident to the diffraction light in single-block annular F-P chamber by changes regulates the laser oscillation frequency of frequency selecting by grating decision; Or by the laser oscillation frequency that changes grating to single-block annular F-P chamber or grating regulates frequency selecting by grating to determine to the distance of semiconductor laser tube;
The conditioning equipment of semiconductor laser tube, changes semiconductor laser tube output light frequency scope by changing the input current of semiconductor laser tube; Or change semiconductor laser tube output light frequency scope by changing the temperature of semiconductor laser tube.
Shown in Figure 7, strengthen external-cavity semiconductor laser as example taking Littrow diffraction structure grating, provide the grating external cavity semiconductor laser structural representation with conditioning equipment.
The laser beam that the semiconductor laser tube 1 that power 30mW wavelength is 689nm is sent, be 4mm through focal length, after numerical aperture is 0.6 aspheric collimation lens, 3 collimations, with 37.34 ° of incident angles, in the double A point incident (by a F-P chamber 5 being made up of the materials processing of monolithic high-quality optical quartz glass) of doing the single-block annular F-P chamber 5 on input and output coupling surface, there is reflection and refraction at A point in incident light.The beam section that wherein refraction enters single-block annular F-P chamber 5, be incident on the B on the reflecting surface that is coated with highly reflecting films, after this point is reflected, turn back to fold plane C point, be incident on C point to be greater than the angle of total reflection, there is total reflection at C point, go back to A point, form resonance, the transmitted light that its B is ordered taking certain angle be incident on incisure density as 2400g/mm, there is suitable diffraction efficiency, groove size as 12.5mm × 12.5mm, thickness are on the holographic diffraction grating 14 of 6mm, the former road of its first-order diffraction is returned, and feeds back to semiconductor laser tube 1.This beam intensity reaches maximal value at resonance frequency place, realizes narrow linewidth laser.Semiconductor laser tube 1 incides the A reflected light of ordering and the output that forms outside cavity gas laser through single-block annular F-P chamber 5 resonance in the sum total of the transmitted light of A, and its output is the most weak in the time of resonance.Grating 14, semiconductor laser 1 and annular F-P chamber 5 form grating external-cavity.The transmitted light in annular F-P chamber 5 has the spectral composition identical with F-P chamber, and this transmitted light, is returned in semiconductor laser tube 1 through grating 14 along the path reverse with former incident beam conllinear as feedback light.Due to the frequency-selecting effect in F-P chamber, the frequency-selecting effect of grating external-cavity is further strengthened, the frequency noise that its effect shows as laser generation is further compressed, thereby realizes narrowing of laser linewidth, obtains short-term live width and is less than 100kHz.
In the present embodiment, in semiconductor laser tube 1, be provided with heat sink 2 devices such as temperature control such as grade, as the conditioning equipment of semiconductor laser tube, realize temperature control by temperature sensor and semiconductor cooler on heat sink 2.
For the conditioning equipment in F-P chamber, on single-block annular F-P chamber 5, be provided with heat sink 6 and adopt temperature sensor and semiconductor cooler to realize temperature control.The resonance frequency in this single-block annular F-P chamber 5 can be done fine tuning among a small circle fast by the method that is bonded in the piezoelectric ceramics 13 on this chamber, by the heat sink 6 precise temperature control technology in single-block annular F-P chamber are done to coarse adjustment on a large scale at a slow speed, to realize the tuning of laser frequency and control.For example, and the laser oscillation frequency that grating 14 frequency-selectings determine can be realized by unitary rotation single-block annular F-P chamber 5: by micrometer adjusting screw 10 or be bonded in piezoelectric ceramics 11 on moving plate and change the feedback angle to grating 14 in monolithic chamber 5.In the process of change angle, being fixed on the single-block annular F-P chamber 5 being stained with on the moving plate 8 of piezoelectric ceramics 11 adjusting brackets rotates together with moving plate 8 with single-block annular F-P chamber heat sink 6, enter the beam direction in single-block annular F-P chamber 5 also along with the rotation of the moving plate 8 of adjusting bracket changes identical angle, realize the first-order diffraction light wavelength feedback to grating.Through these approach, the laser frequency that grating 14 frequency-selectings can be determined approaches consistent with the laser frequency furnishing that monolithic F-P chamber 5 determines.Utilize the physical mechanism of laser generation, make to produce laser generation in the resonance frequency in monolithic F-P chamber 5, and can adjust control laser frequency by the piezoelectric ceramic piece 13 of adjusting the temperature of monolithic heat sink 6 and be bonded on monolithic.Voltage or the fine setting set screw 10 that can arrange by change the piezoelectric ceramics 11 rotating in single-block annular F-P chamber 5, drive single-block annular F-P chamber 5 along with moving plate 8 rotates together, realizes the tracking of grating external-cavity to monolithic F-P chamber frequency or synchronously.
The conditioning equipment of corresponding exocoel, aspheric collimation lens adjustment rack 4 is for the adjustment of fixing aspheric collimation lens 3 and laser beam datum, single-block annular F-P chamber 5 is fixed on the moving plate 8 of adjusting bracket by heat sink 6, the moving plate 8 of adjusting bracket can be adjusted by the micrometer adjusting screw 10 of determining on plate 9, and adjusting bracket is determined plate 9, semiconductor laser tube is heat sink 2, aspheric collimation lens adjustment rack 4, grating fixing bracket are all fixed on the base plate of semiconductor laser; Grating 14 also can be adjusted grating angle by regulating device is set on grating fixing bracket.
The conditioning equipment of semiconductor laser tube, by regulating semiconductor laser tube heat sink 2 to change the temperature of semiconductor laser tube, and then changes semiconductor laser tube output light frequency scope; Also can in the input current of semiconductor laser tube, add in addition modulation signal to change semiconductor laser tube output light frequency scope.
Cavity in such scheme also can be selected other shape, size also can be selected other size, and single-block annular F-P chamber also can adopt other shapes, and optical maser wavelength can be selected other wavelength numerical value, material also can be selected other optics or laser material, and filming parameter also can be selected other numerical value.
Above-described specific embodiment is only specific embodiments of the invention, is not limited to the present invention, within the spirit and principles in the present invention all, any amendment of making, is equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. a grating external cavity semiconductor laser, it is characterized in that, comprise: the conditioning equipment of semiconductor laser tube, grating, the conditioning equipment that is provided with F-P chamber and F-P chamber between semiconductor laser tube and grating, exocoel conditioning equipment and semiconductor laser tube, wherein be made up of monolithic optical material in F-P chamber, include three optical surfaces, be respectively the plane of incidence, the first reflecting surface and the second reflecting surface, grating is diffraction grating, wherein:
In semiconductor laser, the laying of each parts makes the light that sends from the semiconductor laser tube incidence point from the plane of incidence in described F-P chamber enter to inject described F-P chamber, the light beam that enters F-P chamber arrives the reflection spot on the first reflecting surface, after reflection spot reflection, arrive the second reflecting surface, after the second reflecting surface total reflection, get back to the incidence point on the plane of incidence; Light beam incides described grating at the transmitted light of reflection spot as the emergent light in this F-P chamber, the first-order diffraction light that incides the light on described grating feeds back to semiconductor laser tube by original route, and the light beam of light in reflected light and the F-P chamber of incidence point be the output as grating external cavity semiconductor laser at the transmitted light of incidence point;
The conditioning equipment in described F-P chamber, the resonance frequency that regulates single-block annular F-P chamber to determine by changing the inside light path in F-P chamber;
Exocoel conditioning equipment, regulates laser frequency by change grating external-cavity length, optical property;
The conditioning equipment of semiconductor laser tube, changes semiconductor laser tube output light frequency scope by changing the input current of semiconductor laser tube.
2. semiconductor laser according to claim 1, is characterized in that, described exocoel conditioning equipment, comprising: the angle of diffraction that is incident to the diffraction light in F-P chamber by change regulates the equipment of the laser oscillation frequency that frequency selecting by grating determines; Or by changing grating to F-P chamber or grating regulates the equipment of the laser oscillation frequency of frequency selecting by grating decision to the distance of semiconductor laser tube.
3. semiconductor laser according to claim 1, is characterized in that, the conditioning equipment in described F-P chamber comprises following at least one:
Bonding the first piezoelectric ceramics on described F-P chamber, carries out the fine tuning among a small circle fast of F-P chamber resonance frequency;
Be arranged at the temperature control device in described F-P chamber, carry out the coarse adjustment on a large scale at a slow speed of F-P chamber resonance frequency;
Be arranged at micrometer adjusting screw or second piezoelectric ceramics in described F-P chamber, for changing the feedback angle to grating in single-block annular F-P chamber;
The conditioning equipment of described exocoel comprises following at least one:
For the aspheric collimation lens adjustment rack of fixing aspheric collimation lens and carrying out the adjustment of laser beam datum;
For adjusting the regulating device of grating angle;
The conditioning equipment of described semiconductor laser tube comprises that semiconductor laser tube is heat sink, by changing the temperature of semiconductor laser tube, changes semiconductor laser tube output light frequency scope.
4. according to the semiconductor laser described in any one in claim 1-3, it is characterized in that, this semiconductor laser is Littrow structure fringe outside cavity gas laser; Or Littman structure fringe outside cavity gas laser; Or plunder diffraction structure grating outside cavity gas laser.
5. semiconductor laser according to claim 1, is characterized in that, described F-P chamber is isosceles trapezoid hexahedron en-block construction, and the described plane of incidence and the first reflecting surface are two trapezoidal waist place faces, and described the second reflecting surface is the trapezoidal place face of going to the bottom;
Or described F-P chamber is pentahedron structure, place, three limits of equilateral triangle type plane is as described optical surface.
6. semiconductor laser according to claim 5, is characterized in that, when described F-P chamber is isosceles trapezoid hexahedron en-block construction, the described plane of incidence and the second reflecting surface angle are 66.42 °.
7. semiconductor laser according to claim 1, is characterized in that, the plane of incidence in described F-P chamber is coated with the reflectance coating that reflectivity is Ra, the reflectivity Rb=Ra of the first reflecting surface; The second reflecting surface is fully reflecting surface.
8. semiconductor laser according to claim 1, is characterized in that, the reflectivity Ra=0.9 to 0.99 of the described plane of incidence.
9. semiconductor laser according to claim 1, is characterized in that, the optical surface in described F-P chamber is micro-convex-surface type or is plane;
Or the optical surface in described F-P chamber is the combination of plane and the combination of dimpling face or dimpling face and plane and nick face.
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| CN103647215A (en) * | 2013-12-30 | 2014-03-19 | 中国科学院国家授时中心 | Narrow-line-width high-power external cavity laser |
| CN104242051B (en) * | 2014-09-18 | 2017-05-10 | 武汉光迅科技股份有限公司 | External cavity tunable laser and cavity mode locking method thereof |
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| Yabai He等.Robust tunable single-frequency operation of a diode laser by a self-pumped phase-conjugate reflector and a high-finesse filter.《OPTICS LETTERS》.2008,2368-2370. |
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