CN103779784A - Semiconductor laser unit for measuring Raman spectra - Google Patents
Semiconductor laser unit for measuring Raman spectra Download PDFInfo
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- CN103779784A CN103779784A CN201410063051.9A CN201410063051A CN103779784A CN 103779784 A CN103779784 A CN 103779784A CN 201410063051 A CN201410063051 A CN 201410063051A CN 103779784 A CN103779784 A CN 103779784A
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Abstract
The invention discloses a semiconductor laser unit for measuring Raman spectra. The semiconductor laser unit comprises a luminous power stabilization system, a cat eye system, a first interference filter, a second interference filter, a first collimation lens, a cone-shaped amplifier, a laser shaping system, a bottom plate and a current temperature control module. The cat eye system, the first interference filter, the second interference filter, the first collimation lens, the cone-shaped amplifier and the laser shaping system are sequentially installed on the bottom plate. The current temperature control module is connected with the cone-shaped amplifier. Lasers output by the rear end face of the cone-shaped amplifier outputs round light spots after passing through the laser shaping system. The semiconductor laser unit is of a linear cavity structure and can obtain stable high power output.
Description
Technical field
The present invention relates to a kind of semiconductor laser, especially a kind of semiconductor laser that is applicable to raman spectroscopy measurement.
Background technology
Raman spectroscopy is a kind of light scattering technique, the spectral signal that interaction by chemical bond in light and material produces can sampling chemical constitution, the details of phase and form, degree of crystallinity and molecule rotation and vibration, have wide without sampling, highly sensitive, detection range, disturb the advantages such as little, be a kind of effectively structure of matter analytical test means.Raman scattering is that India physicist C .V.Raman found in nineteen twenty-eight, different from Rayleigh scattering, Raman scattering is a kind of inelastic scattering, in the time of homogeneous beam incident light photon and interaction of molecules, there is energy exchange, photon not only changes the direction of motion, part energy is passed to molecule, or the vibration of molecule and rotational energy pass to photon simultaneously, thereby changed the frequency of photon.Raman scattering is divided into stokes scattering and non-stokes scattering, and what common Raman experiment detected is stokes scattering, and the difference of Raman diffused light and Rayleigh light scattering light frequency rate is called Raman shift.Raman shift and incident ray frequency-independent, and only relevant with molecular structure, just can carry out qualitative discriminating and quantitative analysis to material by Raman line number, the size of shift value and the intensity of bands of a spectrum of analyzing test substance.The initial light source of Raman spectroscopy is the daylight focusing on, used afterwards mercury-arc lamp, because intensity is low and the poor development that limits Raman spectroscopy of monochromaticjty, the twentieth century laser sixties come out and be incorporated into Raman spectrometer as excitation source after, along with raising and the computer application of Technique of Weak Signal Detection, Raman spectrum has obtained development rapidly, a lot of new Raman spectroscopies are there are, be widely applied to chemical material, petrochemical industry, archaeology is analyzed, medical science pharmacy, environmental protection, geology detecting, food quality inspection, the fields such as safety check is explosion-proof.
From ultraviolet, can see the narrow linewidth in infrared wavelength range, the light source that superpower laser all can be used as Raman spectroscopy, the selection of wavelength has a great impact sensitivity, the spatial resolution etc. measured, the intensity of Raman scattering and the biquadratic of optical maser wavelength are inversely proportional to, therefore, indigo plant/green visible ray scattering strength more eager to excel in whatever one does more than 15 times than near-infrared laser, spatial resolution is determined by the diameter of laser facula in addition, according to the condition of diffraction limit, short wavelength light source is better than long wavelength.Laser for 785nm related in the present invention belongs to near-infrared laser, because the absorption band that only has a few materials is positioned near infrared region, therefore this laser effectively Fluorophotometry disturbs, although its sensitivity shorter wavelength is low, but can the intensity of Raman signal be improved effectively by Surface enhanced raman spectroscopy technology, because the photon energy of near-infrared laser is lower, can not cause damage and degraded to testing sample in addition.The laser of at present conventional 785nm wave band is mostly semiconductor laser, it has the advantages such as efficiency is high, volume is little, the life-span is long, cheap, but high power semiconductor lasers device often exists that transverse mode characteristic is poor, spectral quality is poor and wavelength the problem such as changes greatly with current temperature, so how to overcome that the problems referred to above realize high-power, narrow linewidth, the semiconductor laser with good optical quality is output into the research direction in recent years.
Summary of the invention
The technical problem to be solved in the present invention be to provide a kind of can be under powerful prerequisite the good and wavelength of spectral quality vary with temperature little laser.
In order to solve the problems of the technologies described above, the invention provides a kind of semiconductor laser for raman spectroscopy measurement, comprise light power stabilising system, opal system, the first interferometric filter, the second interferometric filter, the first collimating lens, tapered amplifier, laser shaping system, base plate and electric current temperature control module, opal system, the first interferometric filter, the second interferometric filter, the first collimating lens, tapered amplifier and laser shaping system are arranged on base plate successively, and the Free Spectral Range of the second interferometric filter and the first interferometric filter is different, and the laser of tapered amplifier front end face output is successively through the first collimating lens, after the second interferometric filter and the first interferometric filter, enter opal system, opal system allows high transmitted light to pass through, and all the other laser An Yuan roads are fed back in tapered amplifier, light power stabilising system receives high transmitted light, and optical power signals is fed back to electric current temperature control module, electric current temperature control module is connected with tapered amplifier, and the laser of tapered amplifier rear end face output is exported circular light spot after laser shaping system, and circular light spot is as the output of laser.
Adopt these two mutually different interferometric filters of Free Spectral Range of the second interferometric filter and the first interferometric filter to carry out frequency-selecting to the light of tapered amplifier output, only have the light that simultaneously meets the specific wavelength of two interferometric filter interference conditions just to there is high permeability, relatively single filter has reduced the possibility of the longitudinal mode variation causing due to the competition of multiple longitudinal modes, while making laser through two interference filters, carry out the poor modulation of Free Spectral Range, in guaranteeing interference filter element high-fineness, further improve the selecting frequency characteristic of laser, strengthen the stability of laser output, adopt opal system that the laser after frequency-selecting is reflected, and allow high transmitted light to pass through, improved the resistance to shock of laser, adopt light power stabilising system to carry out Real-Time Monitoring to the high transmitted light passing through, and to electric current temperature control module transmitting optical power signal, then by the electric current of electric current temperature control module control tapered amplifier, thereby realize the stable output of tapered amplifier.
As further restriction scheme of the present invention, light power stabilising system comprises detector and feedback control system, and detector receives high transmitted light, and optical power signals is fed back to electric current temperature control module by feedback control system.Adopt detector to receive high transmitted light, by feedback control system, optical power signals is being fed back to electric current temperature control module, realize the Real-Time Monitoring to tapered amplifier transmitting power.
As further restriction scheme of the present invention, opal system comprises the second collimating lens and high reflection mirror, high reflection mirror is positioned in the focus of the second collimating lens, the second collimating lens projects on high reflection mirror after the laser entering is collimated, high reflection mirror allows high transmitted light to pass through, and reflects all the other laser.Adopt the second collimating lens and high reflection mirror to form opal system, incident laser is carried out to chatoyancy processing, improved the resistance to shock of laser.
As further restriction scheme of the present invention, laser shaping system comprises non-spherical lens and post lens, and non-spherical lens collimates to the laser of quick shaft direction, and post lens collimate and astigmatic compensation to the light of slow-axis direction.Because tapered amplifier is in outgoing position and the angle of divergence difference of fast axle and slow-axis direction, and a non-spherical lens can not collimate the light of both direction simultaneously, so adopt non-spherical lens to collimate to the laser of quick shaft direction, adopt post lens to collimate and astigmatic compensation to the light of slow-axis direction, to obtain the output of circular Gauss's hot spot as laser.
Scheme as a further improvement on the present invention, base plate is provided with refrigeration module, and refrigeration module is connected with electric current temperature control module.Adopt and on base plate, be provided with refrigeration module, and refrigeration module is connected with electric current temperature control module, by electric current temperature control module, refrigeration module is controlled automatically, thereby realize, the equipment on base plate is carried out to temperature control, further improved the stability of laser output.
Scheme as a further improvement on the present invention, is also provided with semiconductor cooler on tapered amplifier, semiconductor cooler is provided with thermistor, and thermistor is all connected with electric current temperature control module with semiconductor cooler.Adopt thermistor to gather the temperature of tapered amplifier, in the temperature by electric current temperature control module control semiconductor cooler, thereby further realize the temperature control to tapered amplifier, further improved the stability of laser output.
As further restriction scheme of the present invention, the thickness of the first interferometric filter and the second interferometric filter differs 0.1～0.01mm.Adopt two different the first interferometric filter and the second interferometric filters of thickness to realize different Free Spectral Ranges, only have the light that simultaneously meets the specific wavelength of two interferometric filter interference conditions just to there is high permeability, while making laser through two interference filters, carry out the poor modulation of Free Spectral Range, in guaranteeing interference filter element high-fineness, further improved the selecting frequency characteristic of laser.
As further restriction scheme of the present invention, on the optical direction of the first interferometric filter and the second interferometric filter, there is an angle.Adopt two on optical direction, to exist the first interferometric filter of an angle and the second interferometric filter to realize different Free Spectral Ranges, only have the light that simultaneously meets the specific wavelength of two interferometric filter interference conditions just to there is high permeability, while making laser through two interference filters, carry out the poor modulation of Free Spectral Range, in guaranteeing interference filter element high-fineness, further improved the selecting frequency characteristic of laser.
Scheme as a further improvement on the present invention, the front end face of tapered amplifier is provided with anti-reflection film, and rear end face is provided with highly reflecting films.Adopt on the front end face of tapered amplifier, anti-reflection film is set, highly reflecting films are set on rear end face, improved tapered amplifier front end face transmission performance and the reflecting properties of rear end face.
Scheme as a further improvement on the present invention, is equipped with highly reflecting films on the front/rear end of the first interferometric filter and the second interferometric filter.Adopt, on the front/rear end of the first interferometric filter and the second interferometric filter, highly reflecting films are set, improve the high-fineness filtering of interferometric filter.
Beneficial effect of the present invention is: (1) adopts two different the second interferometric filter and the first interferometric filters of Free Spectral Range to carry out frequency-selecting to the light of tapered amplifier output, when guaranteeing interference filter element high-fineness, further improve the selecting frequency characteristic of laser, strengthened the stability of laser output; (2) adopt opal system to improve the resistance to shock of laser; (3) adopt light power stabilising system to carry out Real-Time Monitoring and control, realized the stable output of tapered amplifier; (4) adopt refrigeration module to carry out temperature adjusting to the equipment on base plate, further improved the stability of laser output; (5) adopt thermistor and semiconductor cooler to regulate the temperature of tapered amplifier, further improved the stability of laser output; (6) adopt anti-reflection film and highly reflecting films to realize transmission performance and the reflecting properties of each optical device.
Accompanying drawing explanation
Fig. 1 is the structural representation of semiconductor laser of the present invention;
Fig. 2 is the transmission spectrum of tapered amplifier output light of the present invention after interferometric filter.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and the present invention is described in detail with reference to accompanying drawing, but should not limit the scope of the invention with this.
As shown in Figure 1, the semiconductor laser for raman spectroscopy measurement of the present invention, comprises light power stabilising system 1, opal system 2, the first interferometric filter 3, the second interferometric filter 4, the first collimating lens 5, tapered amplifier 6, laser shaping system 7, base plate 8 and electric current temperature control module 9, opal system 2, the first interferometric filter 3, the second interferometric filter 4, the first collimating lens 5, tapered amplifier 6 and laser shaping system 7 are arranged on base plate 8 successively, and the Free Spectral Range of the second interferometric filter 4 and the first interferometric filter 3 is different, and the laser of tapered amplifier 6 front end face outputs is successively through the first collimating lens 5, after the second interferometric filter 4 and the first interferometric filter 3, enter opal system 2, opal system 2 allows high transmitted light to pass through, and all the other laser An Yuan roads are reflexed in tapered amplifier 6, light power stabilising system 1 receives high transmitted light, and optical power signals is fed back to electric current temperature control module 9, electric current temperature control module 9 is connected with tapered amplifier 6, and the laser of tapered amplifier 6 rear end face outputs is exported circular light spot after laser shaping system 7, and circular light spot is as the output of laser.
Wherein, light power stabilising system 1 comprises detector 11 and feedback control system 12, and detector 11 receives high transmitted light, and optical power signals is fed back to electric current temperature control module 9 by feedback control system 12; Opal system 2 comprises the second collimating lens 22 and high reflection mirror 21, high reflection mirror 21 is positioned in the focus of the second collimating lens 22, the second collimating lens 22 projects on high reflection mirror 21 after the laser entering is collimated, and high reflection mirror 21 allows high transmitted light to pass through, and reflects all the other laser; Laser shaping system 7 comprises non-spherical lens 71 and post lens 72, and non-spherical lens 71 collimates to the laser of quick shaft direction, and post lens 72 collimate and astigmatic compensation to the light of slow-axis direction.
Laser is in the time of work, first send laser by the front end face of tapered amplifier 6, by the first laser alignment lens 5, it is collimated again, laser after collimation carries out frequency-selecting through the first interferometric filter 3 and the second interferometric filter 4 again, transmitted light after frequency-selecting enters into the opal system 2 being made up of the second collimating lens 22 and high reflection mirror 21, high reflection mirror 21 allows the high transmitted light process of fraction, and most of Guang Youyuan road is fed back in tapered amplifier 6, the rear end face of the laser after reflection and tapered amplifier 6 forms exocoel and starting of oscillation, detector 11 is positioned at after high reflection mirror 21, be used for receiving high transmitted light, by feedback control system 12, optical power signals is being fed back to electric current temperature control module 9, electric current temperature control module 9 is controlled the electric current of tapered amplifier 6 according to the optical power signals receiving, thereby realize the control to tapered amplifier 6 transmitting powers, the laser shaping system 7 of the laser of the rear end face output of tapered amplifier 6 through being formed by non-spherical lens 71 and post lens 72, by non-spherical lens 71, the light of quick shaft direction is collimated, by post lens 72, the light of slow axis is collimated again, and carry out astigmatic compensation simultaneously, make laser output circular light spot.
The light that adopts the second interferometric filter 4 and first interferometric filter 3 these two mutually different interferometric filters of Free Spectral Range to export tapered amplifier 6 carries out frequency-selecting, only have the light that simultaneously meets the specific wavelength of two interferometric filter interference conditions just to there is high permeability, relatively single filter has reduced the possibility of the longitudinal mode variation causing due to the competition of multiple longitudinal modes, while making laser through two interferometric filters, be subject to the poor modulation of Free Spectral Range, in guaranteeing interferometric filter high-fineness, further improve the selecting frequency characteristic of laser, strengthen the stability of laser output, adopt opal system 2 that the laser after frequency-selecting is reflected, and allow high transmitted light to pass through, improved the resistance to shock of laser, adopt light power stabilising system 1 to carry out Real-Time Monitoring to the high transmitted light passing through, and to electric current temperature control module 9 transmitting optical power signals, then controlled the electric current of tapered amplifier 6 by electric current temperature control module 9, thereby realize the stable output of tapered amplifier 6.
In the time of concrete structure semiconductor laser of the present invention, first tapered amplifier 6 is placed on base plate 8, it is 780nm that tapered amplifier 6 can be chosen operation wavelength, power output is greater than 1W, packing forms is C-Mount, again the first collimating lens 5 is placed on base plate 8, it is 3.1mm that the first collimating lens 5 can be chosen focal length, numerical aperture is 0.68 non-spherical lens, adjust it up and down and the position of pitching, the laser that tapered amplifier 6 is exported by front end face collimates, make its beam direction parallel with base plate, and within 5m, hot spot does not observe obvious convergence and disperses, the first interferometric filter 3 and the second interferometric filter 4 are installed on base plate 8 again, by in parallel with the second interferometric filter 4 the first interferometric filter 3 light path being placed on after tapered amplifier 6 front end face collimations, in the situation that freely turning round, tapered amplifier 6 utilize spectrometer to measure its transmission spectrum, carefully regulate the position of two filters, make its max transmissive peak in 785nm wavelength place, the first interferometric filter 3 and the second interferometric filter 4 are made by quartz glass, its thickness is respectively 1mm and 1.05mm, normal incidence high-reflecting film to 785nm wavelength place on the equal evaporation of two end face, its reflectivity is greater than 99.8%, therefore in normal incidence situation, all can obtain obtaining good fineness, and both Free Spectral Ranges exist very little difference.
Installing before opal system 2 and need to adjust opal system 2, can utilize the dfb semiconductor collimation laser device that is operated in 785nm as light source, opal system 2 to be adjusted, make on the focal plane of high reflection mirror 21 in the second collimating mirror 22, and by fixing high reflection mirror 21, then opal system 2 being placed on to the rear light to its transmission of the first interferometric filter 3 reflects, now note observing the output light of tapered amplifier 6, until obtain high-power Laser output, recycling detector 11 records by the optical power signals of the high transmitted light of high reflection mirror 21, again feedback control system 12 is connected with electric current temperature control system 9, utilize electric current temperature control system 9 to control the Laser output that obtains firm power.
In order further to improve the stability of laser, on base plate 8, refrigeration module is set, refrigeration module is connected with electric current temperature control module 9.Adopt and be provided with refrigeration module on base plate 8, and refrigeration module is connected with electric current temperature control module 9, by electric current temperature control module 9, refrigeration module is controlled automatically, thereby realize, the equipment on base plate 8 is carried out to temperature control, further improved the stability of laser output.
In order further to improve the stability of laser, semiconductor cooler can also be also set on tapered amplifier 6, thermistor is set on semiconductor cooler, between tapered amplifier 6 and semiconductor cooler, apply heat conductive silica gel and carry out effective underground heat conduction, current controling end, thermistor and the semiconductor cooler of tapered amplifier 6 is all connected with electric current temperature control system 9.
For the first interferometric filter 3 is arranged to different Free Spectral Ranges from the second interferometric filter 4, the thickness of the first interferometric filter 3 and the second interferometric filter 4 can be differed to 0.1～0.01mm.
For the first interferometric filter 3 is arranged to different Free Spectral Ranges from the second interferometric filter 4, can also there is an angle by arranging on the optical direction of the first interferometric filter 3 and the second interferometric filter 4.
In order further to improve the transmission performance of tapered amplifier 6 front end faces and the reflecting properties of rear end face, can on the front end face of tapered amplifier 6, anti-reflection film be set, highly reflecting films are set on rear end face.
In order further to improve reflecting properties and the high-fineness filtering of the first interferometric filter 3 and the second interferometric filter 4 front/rear ends, the highly reflecting films that 785nm wavelength can be all set on the front/rear end of the first interferometric filter 3 and the second interferometric filter 4, its reflectivity is greater than 99.8%.
In order further to improve the transmission performance of the first collimating mirror 5, the second collimating mirror 22, non-spherical lens 71 and post lens 72 front/rear ends, can anti-reflection film be all set at the first collimating mirror 5, the second collimating mirror 22, non-spherical lens 71 and post lens 72 front/rear ends, to prevent reflex.
As shown in Figure 2, the transmissison characteristic that interferometric filter has is determined according to the thickness of beam incident angle and filter, device parameters is characterized by Free Spectral Range and fineness, in the time of interference piece transmission peaks and exocoel pattern matching, just can starting of oscillation obtain narrow linewidth output, and easily cause that because the wider single filter of semiconductor gain spectrum may still can exist the competition of multiple longitudinal modes longitudinal mode changes, can further improve its selecting frequency characteristic by introducing two approaching interferometric filters of Free Spectral Range, or more stable Laser output.In figure, a curve is the change curve of the tapered amplifier output light of the front end face plating anti-reflection film transmission spectrum after single interference filter with wavelength, can find out after the impact of background of removing tapered amplifier spontaneous emission spectrum, transmission spectrum shows as the amplitude sinusoidal form that coexists mutually, and curve b is the transmission spectrum obtaining after the approaching interferometric filter of two Free Spectral Ranges, can find out that the small Free Spectral Range existing due to two interferometric filters is poor and on transmission spectrum, introduced a modulation, make two interferometric filter transmission spectrum b more stable than single interferometric filter transmission spectrum a, and the max transmissive peak of two interferometric filter transmission spectrum b is in 785nm wavelength place.
Above technical scheme can realize a kind of compact conformation, is easy to adjusting, the external-cavity semiconductor laser of narrow linewidth, high power, good stability, applicable to the measurement of Raman spectrum.Although described the present invention in detail with reference to above-mentioned specific embodiment, should be appreciated that the present invention is not limited to disclosed execution mode and embodiment, for this professional domain technical staff, can carry out various changes to its form and details.The form of for example first, second interferometric filter can be replaced by other transmission-type frequency-selecting elements, and the service band of tapered amplifier can replace with other infrared band.Institute it should be understood that and the foregoing is only instantiation of the present invention, is not limited to the present invention, all any modifications of making within the spirit and principles in the present invention, is equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. the semiconductor laser for raman spectroscopy measurement, it is characterized in that: comprise light power stabilising system (1), opal system (2), the first interferometric filter (3), the second interferometric filter (4), the first collimating lens (5), tapered amplifier (6), laser shaping system (7), base plate (8) and electric current temperature control module (9), described opal system (2), the first interferometric filter (3), the second interferometric filter (4), the first collimating lens (5), tapered amplifier (6) and laser shaping system (7) are arranged on base plate (8) successively, described the second interferometric filter (4) is different with the Free Spectral Range of the first interferometric filter (3), the laser of described tapered amplifier (6) front end face output is successively through the first collimating lens (5), after the second interferometric filter (4) and the first interferometric filter (3), enter opal system (2), described opal system (2) allows high transmitted light to pass through, and all the other laser An Yuan roads are fed back in tapered amplifier (6), described light power stabilising system (1) receives high transmitted light, and optical power signals is fed back to electric current temperature control module (9), described electric current temperature control module (9) is connected with tapered amplifier (6), the laser of described tapered amplifier (6) rear end face output is exported circular light spot after laser shaping system (7), described circular light spot is as the output of laser.
2. the semiconductor laser for raman spectroscopy measurement according to claim 1, it is characterized in that: described light power stabilising system (1) comprises detector (11) and feedback control system (12), described detector (11) receives high transmitted light, and optical power signals is fed back to electric current temperature control module (9) by described feedback control system (12).
3. the semiconductor laser for raman spectroscopy measurement according to claim 1, it is characterized in that: described opal system (2) comprises the second collimating lens (22) and high reflection mirror (21), described high reflection mirror (21) is positioned in the focus of the second collimating lens (22), described the second collimating lens (22) projects on high reflection mirror (21) after the laser entering is collimated, described high reflection mirror (21) allows high transmitted light to pass through, and reflects all the other laser.
4. the semiconductor laser for raman spectroscopy measurement according to claim 1, it is characterized in that: described laser shaping system (7) comprises non-spherical lens (71) and post lens (72), described non-spherical lens (71) collimates to the laser of quick shaft direction, and described post lens (72) collimate and astigmatic compensation to the light of slow-axis direction.
5. the semiconductor laser for raman spectroscopy measurement according to claim 1, is characterized in that: described base plate (8) is provided with refrigeration module, and described refrigeration module is connected with electric current temperature control module (9).
6. according to claim 1 or 5 for the semiconductor laser of raman spectroscopy measurement, it is characterized in that: described tapered amplifier is also provided with semiconductor cooler on (6), described semiconductor cooler is provided with thermistor, and described thermistor is all connected with electric current temperature control module (9) with semiconductor cooler.
7. the semiconductor laser for raman spectroscopy measurement according to claim 1, is characterized in that: described the first interferometric filter (3) differs 0.1～0.01mm with the thickness of the second interferometric filter (4).
8. the semiconductor laser for raman spectroscopy measurement according to claim 1, is characterized in that: on the optical direction of described the first interferometric filter (3) and the second interferometric filter (4), have an angle.
9. the semiconductor laser for raman spectroscopy measurement according to claim 1, is characterized in that: the front end face of described tapered amplifier (6) is provided with anti-reflection film, and rear end face is provided with highly reflecting films.
10. the semiconductor laser for raman spectroscopy measurement according to claim 1, is characterized in that: on the front/rear end of described the first interferometric filter (3) and the second interferometric filter (4), be equipped with highly reflecting films.
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| CN106451072A (en) * | 2016-11-30 | 2017-02-22 | 中国科学院国家授时中心 | Liquid crystal tuned high power external cavity laser |
| CN111146685A (en) * | 2019-12-06 | 2020-05-12 | 中国电子科技集团公司第十三研究所 | Optical fiber coupling semiconductor laser |
| CN112636133A (en) * | 2020-11-13 | 2021-04-09 | 香港理工大学深圳研究院 | External cavity modulation method with variable free spectral range and swept-frequency laser |
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| CN103779784B (en) | 2016-08-17 |
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