CN103762259B - 一种凸透镜型波纹式太阳能电池硅基片及其制造工艺 - Google Patents
一种凸透镜型波纹式太阳能电池硅基片及其制造工艺 Download PDFInfo
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- CN103762259B CN103762259B CN201410028014.4A CN201410028014A CN103762259B CN 103762259 B CN103762259 B CN 103762259B CN 201410028014 A CN201410028014 A CN 201410028014A CN 103762259 B CN103762259 B CN 103762259B
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- lenticular lens
- lens type
- silicon chip
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- silicon
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000000873 masking effect Effects 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 16
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 abstract description 2
- 238000012876 topography Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005457 optimization Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410028014.4A CN103762259B (zh) | 2014-01-21 | 2014-01-21 | 一种凸透镜型波纹式太阳能电池硅基片及其制造工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410028014.4A CN103762259B (zh) | 2014-01-21 | 2014-01-21 | 一种凸透镜型波纹式太阳能电池硅基片及其制造工艺 |
Publications (2)
Publication Number | Publication Date |
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CN103762259A CN103762259A (zh) | 2014-04-30 |
CN103762259B true CN103762259B (zh) | 2016-05-04 |
Family
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Family Applications (1)
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CN201410028014.4A Expired - Fee Related CN103762259B (zh) | 2014-01-21 | 2014-01-21 | 一种凸透镜型波纹式太阳能电池硅基片及其制造工艺 |
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CN (1) | CN103762259B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004103736A (ja) * | 2002-09-06 | 2004-04-02 | Ebara Corp | 太陽電池の製造方法 |
JP2006073885A (ja) * | 2004-09-03 | 2006-03-16 | Canon Inc | 固体撮像装置、その製造方法、およびデジタルカメラ |
CN101350373A (zh) * | 2007-07-18 | 2009-01-21 | 科冠能源科技股份有限公司 | 具有多重蚀刻结构的太阳能电池晶片及其制造方法 |
EP2101358A2 (en) * | 2008-03-13 | 2009-09-16 | Samsung Electronics Co., Ltd. | Method of maunfacturing photoelectric device |
CN102356473A (zh) * | 2009-01-16 | 2012-02-15 | 吉尼透镜技术有限责任公司 | 提高光路径长度的光伏(pv)增强膜和制造光伏增强膜的方法 |
CN103236446A (zh) * | 2013-04-19 | 2013-08-07 | 复旦大学 | 一种广谱吸收的黑硅中间带太阳能电池结构及制作方法 |
-
2014
- 2014-01-21 CN CN201410028014.4A patent/CN103762259B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004103736A (ja) * | 2002-09-06 | 2004-04-02 | Ebara Corp | 太陽電池の製造方法 |
JP2006073885A (ja) * | 2004-09-03 | 2006-03-16 | Canon Inc | 固体撮像装置、その製造方法、およびデジタルカメラ |
CN101350373A (zh) * | 2007-07-18 | 2009-01-21 | 科冠能源科技股份有限公司 | 具有多重蚀刻结构的太阳能电池晶片及其制造方法 |
EP2101358A2 (en) * | 2008-03-13 | 2009-09-16 | Samsung Electronics Co., Ltd. | Method of maunfacturing photoelectric device |
CN102356473A (zh) * | 2009-01-16 | 2012-02-15 | 吉尼透镜技术有限责任公司 | 提高光路径长度的光伏(pv)增强膜和制造光伏增强膜的方法 |
CN103236446A (zh) * | 2013-04-19 | 2013-08-07 | 复旦大学 | 一种广谱吸收的黑硅中间带太阳能电池结构及制作方法 |
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CN103762259A (zh) | 2014-04-30 |
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Inventor after: Deng Jie Inventor after: Wang Qiang Inventor after: Huang Qianlu Inventor after: Hua Guoran Inventor before: Hua Guoran Inventor before: Wang Qiang Inventor before: Zeng Feng Inventor before: Zhong Beixin Inventor before: Cheng Shi Inventor before: Deng Jie Inventor before: Qian Aiping |
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Effective date of registration: 20190717 Address after: 226019 Jiangsu city of Nantong province sik Road No. 9 Patentee after: Center for technology transfer, Nantong University Address before: 226019 Jiangsu city of Nantong province sik Road No. 9 Patentee before: Nantong University |
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Effective date of registration: 20191202 Address after: No.1, floor 3, No.319, zhanggongshan Road, Yuhui District, Bengbu City, Anhui Province Patentee after: Bengbu guijiu Intellectual Property Service Co.,Ltd. Address before: 200135 floor 3, building 1, No. 400, Fangchun Road, China (Shanghai) pilot Free Trade Zone, Shanghai Patentee before: Shanghai set up Mdt InfoTech Ltd. Effective date of registration: 20191202 Address after: 200135 floor 3, building 1, No. 400, Fangchun Road, China (Shanghai) pilot Free Trade Zone, Shanghai Patentee after: Shanghai set up Mdt InfoTech Ltd. Address before: 226019 Jiangsu city of Nantong province sik Road No. 9 Patentee before: Center for technology transfer, Nantong University |
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Effective date of registration: 20210429 Address after: 226000 No. 66, Lifa Avenue, Hai'an Development Zone (Chengdong town), Nantong City, Jiangsu Province Patentee after: Jiangsu fox Electric Group Co.,Ltd. Address before: No.1, floor 3, No.319, zhanggongshan Road, Yuhui District, Bengbu City, Anhui Province Patentee before: Bengbu guijiu Intellectual Property Service Co.,Ltd. |
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