Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of polar gas molecular gas sensor and preparation method based on organic effect tubular construction is provided, its compact conformation, with CMOS process compatible, mobility is high, improves response time and release time, signal intensity is high, improve measuring accuracy, easy to use, safe and reliable.
According to technical scheme provided by the invention, the described polar molecule gas sensor based on organic effect tubular construction, comprises the first organic effect body and the second organic effect body; The first organic effect body comprises the first organic field-effect tube drain electrode and the first field effect transistor source electrode, and the second organic effect body comprises the second organic field-effect tube drain electrode and the second organic field-effect tube source electrode; Described the second organic effect body bonding is fixed on the top of the first organic effect body, between the first organic effect body and the second organic effect body, be provided with single crystal wire body, and form test chamber between the first organic effect body after bonding is fixing and the second organic effect body; Single crystal wire body is across described test chamber, the two ends of single crystal wire body connect the first organic field-effect tube drain electrode and the first organic field-effect tube source electrode, to serve as the first field effect transistor drain electrode and the first interelectrode conducting channel in field effect transistor source, and the two ends of single crystal wire body connect the second organic field-effect tube drain electrode and the second organic field-effect tube source electrode simultaneously, to serve as the second field effect transistor drain electrode and the second interelectrode conducting channel in field effect transistor source; In the first organic effect body, comprise the first pore that enters test chamber for polar molecule gas, in the second organic effect body, comprise the second pore that enters test chamber for polar molecule gas, described the first pore, the second pore are all connected with test chamber.
Described the first organic effect body comprises the first substrate, the first field effect transistor drain electrode comprises that the first drain electrode bonding conductor, the first field effect transistor source electrode comprise the first source electrode bonding conductor, the first drain electrode bonding conductor, the first source electrode bonding conductor runs through and is arranged in the first substrate, and between the first drain electrode bonding conductor, the first source electrode bonding conductor and the first substrate, insulation is isolated; The first substrate is also provided with first grid bonding conductor, and first grid bonding conductor is positioned between the first drain electrode bonding conductor and the first source electrode bonding conductor; The top of the first substrate is provided with first grid electrode layer, the top of first grid electrode layer arranges the first supporting layer, the first supporting layer is provided with first field effect transistor the first electrode material layer and first field effect transistor the second electrode material layer, first field effect transistor the first electrode material layer is provided with the first work function modulating layer, and first field effect transistor the second electrode material layer is provided with the second work function modulating layer; The two end supports of single crystal wire body is on the first work function modulating layer and the second work function modulating layer, first field effect transistor the first electrode material layer and first field effect transistor the second electrode material interlayer arrange the first cavity that connects the first supporting layer, the first pore connects the first substrate, and the first pore is connected with the first cavity; The first drain electrode bonding conductor is electrically connected with first field effect transistor the first electrode material layer, and the first source electrode bonding conductor is electrically connected with first field effect transistor the second electrode material layer, first grid bonding conductor and first grid electrode layer Ohmic contact.
Between described first grid electrode layer and the first substrate, be provided with the first interconnecting conductor layer, described the first interconnecting conductor layer and the first drain electrode bonding conductor, the first source electrode bonding conductor mutually insulated, first grid bonding conductor is electrically connected with the first interconnecting conductor layer, and first grid bonding conductor is by the first interconnecting conductor layer and first grid electrode layer Ohmic contact.
Described the first field effect transistor drain electrode also comprises the second drain electrode bonding conductor, the 3rd drain electrode bonding conductor and the 4th drain electrode bonding conductor, the second drain electrode bonding conductor connects and is arranged in the first interconnecting conductor layer, the 3rd drain electrode bonding conductor connects and is arranged in first grid electrode layer, and the 4th drain electrode bonding conductor connects and is arranged in the first supporting layer; The first drain electrode bonding conductor is electrically connected with first field effect transistor the first electrode material layer by the second drain electrode bonding conductor, the 3rd drain electrode bonding conductor and the 4th drain electrode bonding conductor, the first field effect transistor drain electrode and the first interconnecting conductor layer, the isolation of first grid electrode layer mutually insulated;
The first field effect transistor source electrode also comprises the second source electrode bonding conductor, the 3rd source electrode bonding conductor and the 4th source electrode bonding conductor, the second source electrode bonding conductor connects and is arranged in the first interconnecting conductor layer, the 3rd source electrode bonding conductor connects and is arranged in first grid electrode layer, the 4th drain electrode bonding conductor connects and is arranged in the first supporting layer, the first source electrode bonding conductor is by the second source electrode bonding conductor, the 3rd source electrode bonding conductor and the 4th source electrode bonding conductor are electrically connected with first field effect transistor the second electrode material layer, the first field effect transistor source electrode and the first interconnecting conductor layer, the isolation of first grid electrode layer mutually insulated.
Described the first supporting layer is provided with first key cyclization, and first key cyclization is positioned at the outer ring of first field effect transistor the first electrode material layer and first field effect transistor the second electrode material layer; On the second field effect body, be provided with the second bonding ring, the second field effect body is arranged on the top of the first field effect body after fixing by the second bonding ring and first key cyclization bonding.
Described the second bonding ring is arranged on the second supporting layer of the second field effect body, the inner ring of the second bonding ring is provided with second field effect transistor the first electrode material layer and second field effect transistor the second electrode material layer, second field effect transistor the first electrode material layer contacts with single crystal wire body by the 3rd work function modulating layer, and second field effect transistor the second electrode material layer contacts with single crystal wire body by the 4th work function modulating layer; Second field effect transistor the first electrode material layer and second field effect transistor the second electrode material interlayer are provided with the second cavity that connects the second supporting layer, and the second cavity forms test chamber after being connected with the first cavity; The second supporting layer is provided with second gate electrode layer, and second gate electrode layer is provided with the second substrate; The second field effect transistor drain electrode comprises the 5th drain electrode bonding conductor, the second field effect transistor source electrode comprises the 5th source electrode bonding conductor, the 5th drain electrode bonding conductor and the 5th source electrode bonding conductor all connect and are arranged in the second substrate, in the second substrate, be also provided with second grid bonding conductor, described second grid bonding conductor and second gate electrode layer Ohmic contact, the 5th drain electrode bonding conductor is electrically connected with second field effect transistor the first electrode material layer, and the 5th source electrode bonding conductor is electrically connected with second field effect transistor the second electrode material layer; The second pore that connects described the second substrate is set in the second substrate, and described the second pore is connected with the second cavity.
Described the first pore and the second pore lay respectively at the both sides of single crystal wire body.The described polar molecule gas that enters test chamber detection comprises SO
2gas or NO
2gas.
Between described the first organic effect body and the second organic effect body, adopt the one in low temperature laser bonding, solder bonding or eutectic bonding.The transverse width of described test chamber is 3 μ m ~ 10 μ m, and longitudinal thickness is 200 ~ 300nm.
A polar molecule gas sensor preparation method based on organic effect tubular construction, the preparation method of described polar molecule gas sensor comprises the steps:
A, provide the first substrate, and the first drain electrode bonding conductor, first grid bonding conductor and the first source electrode bonding conductor of insulation isolation be set in the first substrate, first grid bonding conductor is positioned between the first drain electrode bonding conductor and the first source electrode bonding conductor, and the first drain electrode bonding conductor, first grid bonding conductor and the first source electrode bonding conductor all connect and be arranged in the first substrate;
B, above above-mentioned the first substrate, first grid electrode layer is set, and the 3rd drain electrode bonding conductor and the 3rd source electrode bonding conductor of insulation isolation is set in first grid electrode layer; The 3rd drain electrode bonding conductor be positioned at the first drain electrode bonding conductor directly over, and be electrically connected with the first drain electrode bonding conductor; The 3rd source electrode bonding conductor be positioned at the first source electrode bonding conductor directly over, and be electrically connected first grid electrode layer and first grid bonding conductor Ohmic contact with the first source electrode bonding conductor;
C, on above-mentioned first grid electrode layer, the first supporting layer is set, and the 4th drain electrode bonding conductor and the 4th source electrode bonding conductor be set in the first supporting layer, the 4th drain electrode bonding conductor be positioned at the 3rd drain electrode bonding conductor directly over, and with the 3rd drain electrode bonding conductor be electrically connected; The 4th source electrode bonding conductor be positioned at the 3rd source electrode bonding conductor directly over, and be electrically connected with the 3rd source electrode bonding conductor;
D, first required field effect transistor the first electrode material layer and first field effect transistor the second electrode material layer are set on above-mentioned the first supporting layer, first field effect transistor the first electrode material layer is electrically connected with the 4th drain electrode bonding conductor, and first field effect transistor the second electrode material layer is electrically connected with the 4th source electrode bonding conductor;
E, on above-mentioned first field effect transistor the first electrode material layer, the first work function modulating layer is set, on first field effect transistor the second electrode material layer, the second work function modulating layer is set;
F, the first supporting layer is carried out to etching, to form the first cavity that connects described the first supporting layer, first field effect transistor the first electrode material layer, first field effect transistor the second electrode material layer lay respectively at the both sides of the first cavity;
G, above-mentioned first grid electrode layer, the first substrate are carried out to etching, obtain the first pore, described the first pore is connected with the first cavity, to form the first required organic effect body;
H, provide the second substrate, utilize above-mentioned steps to form the second required organic effect body; The second organic effect body comprises the second cavity, the second pore, the 3rd work function modulating layer, second field effect transistor the first electrode material layer, the 4th work function modulating layer and second field effect transistor the second electrode material layer;
I, on above-mentioned the first cavity, arrange some across single crystal wire body, the two ends of described single crystal wire body are connected with the first work function modulating layer and the second work function modulating layer respectively;
J, above-mentioned the second organic effect body bonding that comprises the second substrate is fixed on the first organic effect body, the second cavity and the first cavity form test chamber jointly; Single crystal wire body is simultaneously across on the second cavity, one end of single crystal wire body is connected with second field effect transistor the first electrode material layer by the 3rd work function modulating layer, and the other end of single crystal wire body is connected with second field effect transistor the second electrode material layer by the 4th work function modulating layer.
In described steps d, first organic field-effect tube the first electrode material layer and first organic field-effect tube the second electrode material layer are same manufacture layer, and first organic field-effect tube the first electrode material layer and first organic field-effect tube the second electrode material layer form by sputter or electrode evaporation material; In described step e, the first work function modulating layer and the second work function modulating layer are same manufacture layer, and the first work function modulating layer and the second work function modulating layer form by sputter or instillation modulating layer material.
The electrode material of described formation first organic field-effect tube the first electrode material layer and first organic field-effect tube the second electrode material layer comprises Al, Cu or Ag; When electrode material is selected Al, by Graphene or sputter MoO
3form the first work function modulating layer and the second work function modulating layer; When electrode material is selected Cu, modulating layer material comprises CuxO, TCNQ or Graphene; When electrode material is selected Ag, modulating layer material comprises TCNQ or Graphene.Described single crystal wire body comprises CuPc, FePC or Cobalt Phthalocyanine.
Advantage of the present invention: between the first organic effect body and the second organic field-effect tube, bonding is fixed, and many single crystal wire body is arranged between the first organic effect body and the second organic effect body, to serve as the first field effect transistor drain electrode and the first interelectrode conducting channel in field effect transistor source, and serve as the second field effect transistor drain electrode and the second interelectrode conducting channel in field effect transistor source; Compact conformation, with CMOS process compatible, mobility is high, improves response time and release time, and signal intensity is high, improves measuring accuracy, easy to use, safe and reliable.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in figure 12: in order to improve enough mobilities, response time, release time, signal intensity and measuring accuracy, the present invention includes the first organic effect body and the second organic effect body; The first organic effect body comprises the first organic field-effect tube drain electrode and the first field effect transistor source electrode, and the second organic effect body comprises the second organic field-effect tube drain electrode and the second organic field-effect tube source electrode; Described the second organic effect body bonding is fixed on the top of the first organic effect body, between the first organic effect body and the second organic effect body, be provided with single crystal wire body 13, and form test chamber between the first organic effect body after bonding is fixing and the second organic effect body; Single crystal wire body 13 is across described test chamber, the two ends of single crystal wire body 13 connect the first organic field-effect tube drain electrode and the first organic field-effect tube source electrode, to serve as the first field effect transistor drain electrode and the first interelectrode conducting channel in field effect transistor source, and the two ends of single crystal wire body 13 connect the second organic field-effect tube drain electrode and the second organic field-effect tube source electrode simultaneously, to serve as the second field effect transistor drain electrode and the second interelectrode conducting channel in field effect transistor source; In the first organic effect body, comprise the first pore 12 that enters test chamber for polar molecule gas, in the second organic effect body, comprise the second pore 32 that enters test chamber for polar molecule gas, described the first pore 12, the second pore 32 are all connected with test chamber.
Particularly, the first organic effect body forms the organism field effect transistor of contact-type at the bottom of the grid of top by single crystal wire body 13, the second organic effect body forms the organism field effect transistor of top grid top contact type by single crystal wire body 13, in the embodiment of the present invention, by the collaborative work of the first organic effect body and the second organic effect body, can improve response time, release time, signal intensity and measuring accuracy.Described the first pore 12 and the second pore 32 lay respectively at the both sides of single crystal wire body 13, the first pore 12 and the second pore 32 are interspersed, as shown in Figure 13 and Figure 14, after the first pore 12 and the second pore 32 are interspersed, can make the polar molecule gas that enters test chamber all can pass through single crystal wire body 13, improve the contact area and the accuracy of detection that detect.
The described polar molecule gas that enters test chamber detection comprises SO
2gas or NO
2gas.Between described the first organic effect body and the second organic effect body, adopt the one in low temperature laser bonding, solder bonding or eutectic bonding.The transverse width of described test chamber is 3 μ m ~ 10 μ m, and longitudinal thickness is 200 ~ 300nm.
Further, described the first organic effect body comprises the first substrate 1, the first field effect transistor drain electrode comprises that the first drain electrode bonding conductor 2, the first field effect transistor source electrode comprise the first source electrode bonding conductor 4, the first drain electrode bonding conductor 2, the first source electrode bonding conductor 4 runs through and is arranged in the first substrate 1, and between the first drain electrode bonding conductor 2, the first source electrode bonding conductor 4 and the first substrate 1, insulation is isolated; The first substrate 1 is also provided with first grid bonding conductor 3, and first grid bonding conductor 3 is positioned between the first drain electrode bonding conductor 2 and the first source electrode bonding conductor 4; The top of the first substrate 1 is provided with first grid electrode layer 6, the top of first grid electrode layer 6 arranges the first supporting layer 7, the first supporting layer 7 is provided with first field effect transistor the first electrode material layer 9 and first field effect transistor the second electrode material layer 20, first field effect transistor the first electrode material layer 9 is provided with first work function modulating layer 10, the first field effect transistor the second electrode material layers 20 and is provided with the second work function modulating layer 39; The two end supports of single crystal wire body 13 is on the first work function modulating layer 10 and the second work function modulating layer 39, the first cavity 11 that connects the first supporting layer 7 is set between first field effect transistor the first electrode material layer 9 and first field effect transistor the second electrode material layer 20, the first pore 12 connects the first substrate 1, and the first pore 12 is connected with the first cavity 11; The first drain electrode bonding conductor 2 is electrically connected with first field effect transistor the first electrode material layer 9, and the first source electrode bonding conductor 4 is electrically connected with first field effect transistor the second electrode material layer 20, first grid bonding conductor 3 and first grid electrode layer 6 Ohmic contact.
In the embodiment of the present invention, first field effect transistor the first electrode material layer 9 is connected with one end of single crystal wire body 13 by the first work function modulating layer 10, first field effect transistor the second electrode material layer 20 is connected with the other end of single crystal wire body 13 by the second work function modulating layer 39, by the first work function modulating layer 10 and the second work function modulating layer 39, can make first field effect transistor the first electrode material layer 9 and first field effect transistor the second electrode material layer 20 mate with the work function of single crystal wire body 13, guarantee can not cause mobility in interface, to produce unnecessary loss.
In general, adopt first field effect transistor the first electrode material layer 9 of metal material and the work function of first field effect transistor the second electrode material layer 20 to be greater than the work function of single crystal wire body 13, by the modulating action of the first work function modulating layer 10 and the second work function modulating layer 39, thereby realize without Schottky barrier injected carrier to the conducting channel that is arranged in single crystal wire body 13.The first work function modulating layer 10 and the second work function modulating layer 39 are not real electrode, only need to there is suitable work function, less demanding to conducting electricity, can adopt semiconductor, the thickness of the first work function modulating layer 10 and the second work function modulating layer 39 is generally between 50 à ~ 200 à, to avoid the causing conducting function of first field effect transistor the first electrode material layer 9 and first field effect transistor the second electrode material layer 20 to decline.
Between described first grid electrode layer 6 and the first substrate 1, be provided with the first interconnecting conductor layer 5, described the first interconnecting conductor layer 5 and the first drain electrode bonding conductor 2, the first source electrode bonding conductor 4 mutually insulateds, first grid bonding conductor 3 is electrically connected with the first interconnecting conductor layer 5, and first grid bonding conductor 3 is by the first interconnecting conductor layer 5 and first grid electrode layer 6 Ohmic contact.In the embodiment of the present invention, between first grid electrode layer 6 and the first substrate 1, the first interconnecting conductor layer 5 being set is also that first grid electrode layer 6 adopts conductive polycrystalline silicon in order to mate the work function between first grid bonding conductor 3 and first grid electrode layer 6.The material of the first interconnecting conductor layer 5 can be any one in Ti, Al, Mg, Cu or Au.
When between first grid electrode layer 6 and the first substrate 1, arrange after the first interconnecting conductor layer 5, described the first field effect transistor drain electrode also comprises the second drain electrode bonding conductor 14, the 3rd drain electrode bonding conductor 16 and the 4th drain electrode bonding conductor 18, the second drain electrode bonding conductor 14 connects and is arranged in the first interconnecting conductor layer 5, the 3rd drain electrode bonding conductor 16 connects and is arranged in first grid electrode layer 6, and the 4th drain electrode bonding conductor 18 connects and is arranged in the first supporting layer 7; The first drain electrode bonding conductor 2 is electrically connected with first field effect transistor the first electrode material layer 9 by the second drain electrode bonding conductor 14, the 3rd drain electrode bonding conductor 16 and the 4th drain electrode bonding conductor 18, the first field effect transistor drain electrode and the first interconnecting conductor layer 5, the 6 mutually insulated isolation of first grid electrode layer;
Described the first field effect transistor drain electrode and the first interconnecting conductor layer 5, the 6 mutually insulated isolation of first grid electrode layer refer to need to be by insulation isolation between the second drain electrode bonding conductor 14 and the first interconnecting conductor layer 5, insulation isolation between the 3rd drain electrode bonding conductor 16 and first grid electrode layer 6, thus can realize above-mentioned insulation insulation request.
The first field effect transistor source electrode also comprises the second source electrode bonding conductor 15, the 3rd source electrode bonding conductor 17 and the 4th source electrode bonding conductor 19, the second source electrode bonding conductor 15 connects and is arranged in the first interconnecting conductor layer 5, the 3rd source electrode bonding conductor 17 connects and is arranged in first grid electrode layer 6, the 4th drain electrode bonding conductor 19 connects and is arranged in the first supporting layer 7, the first source electrode bonding conductor 4 is by the second source electrode bonding conductor 15, the 3rd source electrode bonding conductor 17 and the 4th source electrode bonding conductor 19 are electrically connected with first field effect transistor the second electrode material layer 20, the first field effect transistor source electrode and the first interconnecting conductor layer 5, the 6 mutually insulated isolation of first grid electrode layer.
Described the first field effect transistor source electrode and the first interconnecting conductor layer 5, the 6 mutually insulated isolation of first grid electrode layer refer to and need insulation between the second source electrode bonding conductor 15 and the first interconnecting conductor layer 5 to isolate, insulation isolation between the 3rd source electrode bonding conductor 17 and first grid electrode layer 6, to realize the insulation insulation request of number sequence.
Described the first supporting layer 7 is provided with first key cyclization 8, and first key cyclization 8 is positioned at the outer ring of first field effect transistor the first electrode material layer 9 and first field effect transistor the second electrode material layer 20; On the second field effect body, be provided with the top that is arranged on the first field effect body after the second bonding ring 28, the second field effect bodys are fixed by the second bonding ring 28 and first key cyclization 8 bondings.In the embodiment of the present invention, by first key cyclization 8 and the second bonding ring 28 bonded energies, realize the one of low temperature laser bonding, solder bonding or eutectic bonding, low temperature laser bonding, solder bonding or eutectic bonding are general conventional bonding mode, and detailed process repeats no more.The first field effect body can also adopt and aim at bonding or other bonding modes with the second field effect body, repeats no more herein.
Described the second bonding ring 28 is arranged on the second supporting layer 27 of the second field effect body, the inner ring of the second bonding ring 28 is provided with second field effect transistor the first electrode material layer 29 and second field effect transistor the second electrode material layer 40, second field effect transistor the first electrode material layer 29 contacts with single crystal wire body 13 by the 3rd work function modulating layer 30, and second field effect transistor the second electrode material layer 40 contacts with single crystal wire body 13 by the 4th work function modulating layer 41; Between second field effect transistor the first electrode material layer 29 and second field effect transistor the second electrode material layer 40, be provided with to connect after the second cavity 31, the second cavitys 31 of the second supporting layer 27 are connected with the first cavity 31 and form test chamber; The second supporting layer 27 is provided with second gate electrode layer 26, and second gate electrode layer 26 is provided with the second substrate 21; The second field effect transistor drain electrode comprises the 5th drain electrode bonding conductor 22, the second field effect transistor source electrode comprises the 5th source electrode bonding conductor 24, the 5th drain electrode bonding conductor 22 and the 5th source electrode bonding conductor 24 all connect and are arranged in the second substrate 21, in the second substrate 21, be also provided with second grid bonding conductor 23, described second grid bonding conductor 23 and second gate electrode layer 26 Ohmic contact, the 5th drain electrode bonding conductor 22 is electrically connected with second field effect transistor the first electrode material layer 29, and the 5th source electrode bonding conductor 24 is electrically connected with second field effect transistor the second electrode material layer 40; Interior the second pore 32 that connects described the second substrate 21 that arranges of the second substrate 21, described the second pore 32 is connected with the second cavity 31.
In the embodiment of the present invention, the second organic effect body is identical with the structure of the first organic effect body, and the difference of the second organic effect body and the first organic effect body is positioned at being interspersed of the second pore 32 and the first pore 31.Particularly, between second gate electrode layer 26 and the second substrate 21, be provided with the second interconnecting conductor layer 25, the 6th drain electrode bonding conductor 33 and the 6th source electrode bonding conductor 34 of the interior setting of the second interconnecting conductor layer 25 and the 25 insulation isolation of described interconnecting conductor layer, the 6th drain electrode bonding conductor 33 be positioned at the 5th drain electrode bonding conductor 22 directly over, and the 6th drain electrode bonding conductor 33 is electrically connected with the 5th drain electrode bonding conductor 22, the 6th source electrode bonding conductor 34 be positioned at the 5th source electrode bonding conductor 24 under, the 6th source electrode bonding conductor 34 is electrically connected with the 5th source electrode bonding conductor 24.
In second gate electrode layer 26, be provided with the 7th drain electrode bonding conductor 35 and the 7th source electrode bonding conductor 36, the 7th drain electrode bonding conductor 35 be positioned at the 6th drain electrode bonding conductor 33 under, the 7th source electrode bonding conductor 35 be positioned at the 6th source electrode bonding conductor 34 under, the 7th drain electrode bonding conductor 35 is electrically connected with the 6th drain electrode bonding conductor 33, the 7th source electrode bonding conductor 36 is electrically connected with the 6th source electrode bonding conductor 34, and the 7th drain electrode bonding conductor 35 and the 7th source electrode bonding conductor 36 are all isolated with 26 insulation of second gate electrode layer, and second gate electrode layer 26 is also polysilicon.
In the second supporting layer 7, be provided with the 8th drain electrode bonding conductor 37 and the 8th source electrode bonding conductor 38, the 8th drain electrode bonding conductor 37 be positioned at the 7th drain electrode bonding conductor 35 directly over, the 8th source electrode bonding conductor 38 be positioned at the 7th source electrode bonding conductor 36 under, the 8th drain electrode bonding conductor 37 is electrically connected with the 7th drain electrode bonding conductor 35, and the 8th source electrode bonding conductor 38 is electrically connected with the 7th source electrode bonding conductor 36.
As shown in Fig. 1 ~ Figure 12, the polar molecule gas sensor of said structure can prepare by following processing step, and the preparation method of described polar molecule gas sensor comprises the steps:
A, provide the first substrate 1, and at interior the first drain electrode bonding conductor 2, first grid bonding conductor 3 and the first source electrode bonding conductor 4 that insulation isolation is set of the first substrate 1, first grid bonding conductor 3 is positioned between the first drain electrode bonding conductor 2 and the first source electrode bonding conductor 4, and the first drain electrode bonding conductor 2, first grid bonding conductor 3 and the first source electrode bonding conductor 4 all connect and be arranged in the first substrate 1;
As depicted in figs. 1 and 2: the first substrate 1 adopts SOI(Silicon-On-Insulator) or silicon; In order to prepare the first drain electrode bonding conductor 2, first grid bonding conductor 3 and the first source electrode bonding conductor 4 in the first substrate 1, need to optionally shelter and etching the first substrate 1, to obtain through hole in the first substrate 1, by insulation course is set in through hole, adhesion layer, and in through hole, fill metal, obtain connecting the first drain electrode bonding conductor 2, first grid bonding conductor 3 and the first source electrode bonding conductor 4 of the first substrate 1.
B, above above-mentioned the first substrate 1, first grid electrode layer 6 is set, and at interior the 3rd drain electrode bonding conductor 16 and the 3rd source electrode bonding conductor 17 that insulation isolation is set of first grid electrode layer 6; The 3rd drain electrode bonding conductor 16 be positioned at the first drain electrode bonding conductor 2 directly over, and be electrically connected with the first drain electrode bonding conductor 2; The 3rd source electrode bonding conductor 17 be positioned at the first source electrode bonding conductor 4 directly over, and be electrically connected first grid electrode layer 6 and first grid bonding conductor 3 Ohmic contact with the first source electrode bonding conductor 4;
As shown in Figure 3, in order to make mating of work function between first grid bonding conductor 3 and first grid electrode layer 6, need to be at first grid electrode layer 6 and the interior first interconnecting conductor layer 5 that arranges of the first substrate 1, the first interconnecting conductor layer 5 is arranged on the first substrate 1 by the method for evaporation or sputter, and the material of the first interconnecting conductor layer 5 is the one in Ti, Al, Mg, Cu or Au.Obtaining in the first interconnect conductive layers 5, the first interconnecting conductor layer 5 directly over the first drain electrode bonding conductor 2 and the first source electrode bonding conductor 4 is etched away, form the through hole that connects the first interconnecting conductor layer 5, by insulation course is set in through hole, after adhesion layer, by metal filled the second drain electrode bonding conductor 14 and the second source electrode bonding conductor 15 of obtaining, in the embodiment of the present invention, the second drain electrode bonding conductor 14 and the second source electrode bonding conductor 15 are that same technique is manufactured layer.After metal filled, at the filling metal removal that 5, front needs the first interconnecting conductor layer of first grid electrode layer 6 is set, be conventional processing step herein, repeat no more herein.
As shown in Figure 4, in order to obtain the 3rd drain electrode bonding conductor 16 and the 3rd source electrode bonding conductor 17, need to carry out etching to first grid electrode layer 6, to obtain connecting the through hole of first grid electrode layer 6, by manufacture insulation course in through hole, after adhesion layer etc., carry out metal filled, after metal filled, obtaining the first drain electrode bonding conductor 16 and the 3rd source electrode bonding conductor 17, the three drain electrode bonding conductors 16 and the 3rd source electrode bonding conductor 17 is that same technique is manufactured layer.
C, the first supporting layer 7 is set on above-mentioned first grid electrode layer 6, and at interior the 4th drain electrode bonding conductor 18 and the 4th source electrode bonding conductor 19 that arrange of the first supporting layer 7, the 4th drain electrode bonding conductor 18 be positioned at the 3rd drain electrode bonding conductor 16 directly over, and with the 3rd drain electrode bonding conductor 16 be electrically connected; The 4th source electrode bonding conductor 19 be positioned at the 3rd source electrode bonding conductor 17 directly over, and be electrically connected with the 3rd source electrode bonding conductor 17;
As shown in Figure 5, the first supporting layer 7 is by CVD(Chemical Vapor Deposition) be arranged on first grid electrode layer 6, the first supporting layer 7 can form for photoresists such as the PMMA of the monox of growth, silicon nitride or spin coating oven dry, by forming through hole in the first supporting layer 7 etchings, by obtaining the 4th drain electrode bonding conductor 18 and the 4th source electrode bonding conductor 19 to filling metal in through hole.In the embodiment of the present invention, the process that forms through hole and fill metal in through hole is existing conventional technological means.The 4th drain electrode bonding conductor 18, the 4th source electrode bonding conductor 19 are that same technique is manufactured layer.
D, first required field effect transistor the first electrode material layer 9 and first field effect transistor the second electrode material layer 20 are set on above-mentioned the first supporting layer 7, first field effect transistor the first electrode material layer 9 is electrically connected with the 4th drain electrode bonding conductor 18, and first field effect transistor the second electrode material layer 20 is electrically connected with the 4th source electrode bonding conductor 19;
As shown in Figure 6: while specifically implementing, first on the first supporting layer 7, first key cyclization 8 is set, first field effect transistor the first electrode material layer 9 and first field effect transistor the second electrode material layer 20 are set on first supporting layer 7 with first key cyclization 8; First organic field-effect tube the first electrode material layer 9 and first organic field-effect tube the second electrode material layer 20 are same manufacture layer, and first organic field-effect tube the first electrode material layer 9 and first organic field-effect tube the second electrode material layer 20 form by sputter or electrode evaporation material;
E, on above-mentioned first field effect transistor the first electrode material layer 9, the first work function modulating layer 10 is set, on first field effect transistor the second electrode material layer 20, the second work function modulating layer 39 is set;
As shown in Figure 7, the first work function modulating layer 10 and the second work function modulating layer 39 are same manufacture layer, and the first work function modulating layer 10 and the second work function modulating layer 39 form by sputter or instillation modulating layer material.
The electrode material of described formation first organic field-effect tube the first electrode material layer 9 and first organic field-effect tube the second electrode material layer 20 comprises Al, Cu or Ag; When electrode material is selected Al, by Graphene or sputter MoO
3form the first work function modulating layer 10 and the second work function modulating layer 39; When electrode material is selected Cu, modulating layer material comprises that CuxO(CuxO is certain copper of oxidation, that is the oxide of copper), TCNQ(TCNQ is a kind of organic semiconductor, is a kind of complex salt) or Graphene; When electrode material is selected Ag, modulating layer material comprises TCNQ or Graphene.When adopting during Graphene, need to first carry out on other substrates to peel afterwards, cover on first field effect transistor the first electrode material layer 9 and first field effect transistor the second electrode material layer 20 with mechanical probes.
F, the first supporting layer 7 is carried out to etching, to form, connect first cavity 11, the first field effect transistor the first electrode material layers 9 of described the first supporting layer 7, the both sides that first field effect transistor the second electrode material layer 20 lays respectively at the first cavity 11;
As shown in Figure 8 and Figure 9, by the first supporting layer 7 is carried out to etching, the bottom that obtains the first cavity 11, the first cavitys 11 is that first grid electrode layer 6, the first cavitys 11 carry out etching along the width of the first supporting layer 7.
G, above-mentioned first grid electrode layer 6, the first substrate 1 are carried out to etching, obtain the first pore 12, described the first pore 12 is connected with the first cavity 11, to form the first required organic effect body;
As shown in Figure 10 and Figure 11, by the etching to first grid electrode layer 6 and the first substrate 1, obtain the first pore 12, the first pores 12 and be positioned at one end of the first cavity 11, the first pore 12 connects first grid electrode layer 6 and the first substrate 1, by forming the first organic effect body after above-mentioned setting.
H, provide the second substrate 21, utilize above-mentioned steps to form the second required organic effect body; The second organic effect body comprises the second cavity 31, the second pore 32, the 3rd work function modulating layer 30, second field effect transistor the first electrode material layer 29, the 4th work function modulating layer 41 and second field effect transistor the second electrode material layer 40;
Known by above-mentioned explanation, the structure substrate of the structure of the second organic effect body and the first organic effect body roughly the same, can adopt above-mentioned steps preparation in order to obtain the second organic effect body;
I, on above-mentioned the first cavity 11, arrange some across single crystal wire body 13, the two ends of described single crystal wire body 13 are connected with the first work function modulating layer 10 and the second work function modulating layer 20 respectively;
Described single crystal wire body 13 comprises CuPc, FePC or Cobalt Phthalocyanine.By single crystal wire body 13, serve as the conducting channel of the first organic effect body and the second organic effect body.In the specific implementation, can increase response current by many single crystal wire bodies 13 are set.
J, above-mentioned the second organic effect body bonding that comprises the second substrate 21 is fixed on the first organic effect body to the second cavity 31 and the common test chamber that forms of the first cavity 11; Single crystal wire body 13 is simultaneously across on the second cavity 31, one end of single crystal wire body 13 is connected with second field effect transistor the first electrode material layer 29 by the 3rd work function modulating layer 30, and the other end of single crystal wire body 13 is connected with second field effect transistor the second electrode material layer 40 by the 4th work function modulating layer 41.
As shown in figure 12, by obtaining required polar molecule gas sensor after bonding, in the embodiment of the present invention, the first organic effect body and the second organic effect body are fixed by first key cyclization 8 and the second bonding ring 28 bondings.
In the first organic effect body, first grid electrode layer 6, the first interconnecting conductor layer 5 and first grid bonding conductor 3 form the first organic field-effect tube gate electrode, first organic field-effect tube the first electrode material layer 9, the first work function modulating layer 10, the first drain electrode bonding conductor 2, the second drain electrode bonding conductor 14, the 3rd drain electrode bonding conductor 16 and the 4th drain electrode bonding conductor 18 form the first organic field-effect tube drain electrode, first organic field-effect tube the second electrode material layer 20, the second work function modulating layer 39, the first source electrode bonding conductor 4, the second source electrode bonding conductor 15, the 3rd source electrode bonding conductor 17 and the 4th source electrode bonding conductor 19 form the second organic field-effect tube source electrode.
In the second organic effect body, second gate electrode layer 26, the second interconnecting conductor layer 25 and second gate electrode bonding conductor 23 form the second organic field-effect tube gate electrode, second organic field-effect tube the first electrode material layer 29, the 3rd work function modulating layer 30, the 5th drain electrode bonding conductor 22, the 6th drain electrode bonding conductor 33, the 7th drain electrode bonding conductor 35 and the 8th drain electrode bonding conductor 37 form the second organic field-effect tube drain electrode, second organic field-effect tube the second electrode material layer 40, the 4th work function modulating layer 41, the 5th source electrode bonding conductor 24, the 6th source electrode bonding conductor 34, the 7th source electrode bonding conductor 36 and the 8th source electrode bonding conductor 38 form the second organic field-effect tube source electrode.
The present invention has adopted two cavity dielectric medium structures, by the cooperation of single crystal wire body 13, the first organic effect body and the second organic effect body, has following features:
1), the second organic field-effect tube gate electrode mode of operation of the second organic effect body: the second organic field-effect tube gate electrode is biased voltage and the first organic field-effect tube gate electrode while not being biased voltage, whole working sensor is in accumulation area, be aided with required source-drain voltage (simultaneously at the first organic field-effect tube source electrode, on the first organic field-effect tube drain electrode, be biased voltage, the voltage of the second organic field-effect tube source electrode is identical with the first organic field-effect tube source electrode voltage, the second organic field-effect tube drain electrode is identical with the voltage of the first organic field-effect tube drain electrode), the upper surface of the single crystal wire body 13 of conducting channel will there be is electric current to flow through to serve as, but as while existing without polar molecule gas to be measured, owing to being positioned at the capture effect of a large amount of shallow potential well of charge carrier of the upper surface (gaseous dielectric interface) of single crystal wire body 13 to charge carrier, make current signal extremely faint.As there is polar molecule gas SO to be measured
2or NO
2interact with the shallow potential well that is positioned at single crystal wire body 13 upper surfaces, can make the mobility of single crystal wire body 13 greatly increase, show as current signal is significantly increased.Under this mode of operation, the first organic effect body and the second organic effect body are simultaneously to there being injected carrier in single crystal wire body 13, serve as the situation while exporting the source-drain current signal responding apparently higher than single tube injected carrier, reach the object that shortens the response time simultaneously.
2), the first organic field-effect tube gate electrode mode of operation: when the first organic field-effect tube gate electrode making alive biasing and the second organic field-effect tube gate electrode are not biased voltage, whole sensor is also operated in accumulation area, apply source-drain voltage identical while working with the second organic field-effect tube gate electrode, the lower surface of the single crystal wire body 13 of conducting channel will there be is electric current to flow through to serve as, but as while existing without polar molecule gas to be measured, due to the capture effect of the shallow potential well of a large amount of charge carriers of lower surface (gaseous dielectric interface) that is positioned at single crystal wire body 13 to charge carrier, make current signal extremely faint.As there is polar molecule gas SO to be measured
2or NO
2interact with the shallow potential well that is positioned at single crystal wire body 13 lower surfaces, can make the mobility of single crystal wire body 13 greatly increase, show as current signal is significantly increased.Under this mode of operation, the first organic effect body and the second organic effect body be simultaneously to injected carrier in single crystal wire body 13, the situation of the source-drain current signal that serves as output response during apparently higher than single tube injected carrier.Between the first organic effect body and the second organic effect body, adopt N bar single crystal wire body 13 to work simultaneously, further increased signal.
During each gate electrode work, there are two organism field effect transistor to work simultaneously, thereby increased response signal.By the suitable roughening processing (bombardment of the high energy Ar particle beams) in interface (described interface refers to that the first work function modulating layer 10, the second work function modulating layer 39 form with single crystal wire body 13 part contacting), increased the contact area of interface and single crystal wire body 13, increase mobility, thereby reached the object that shortens the response time.
Under the constant prerequisite of source-drain voltage, by to the second organic field-effect tube gate electrode mode of operation and the first organic field-effect tube gate electrode mode of operation be used alternatingly realize upper and lower two the surperficial time division multiplexes of single crystal wire body 13, thereby effectively reach, shorten the object of release time.
Between the present invention's the first organic effect body and the second organic field-effect tube, bonding is fixed, and many single crystal wire body 13 is arranged between the first organic effect body and the second organic effect body, to serve as the first field effect transistor drain electrode and the first interelectrode conducting channel in field effect transistor source, and serve as the second field effect transistor drain electrode and the second interelectrode conducting channel in field effect transistor source; Compact conformation, with CMOS process compatible, mobility is high, improves response time and release time, and signal intensity is high, improves measuring accuracy, easy to use, safe and reliable.