CN103822953B - Backgate formula ion-sensitive field effect transistor - Google Patents
Backgate formula ion-sensitive field effect transistor Download PDFInfo
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- CN103822953B CN103822953B CN201410060640.1A CN201410060640A CN103822953B CN 103822953 B CN103822953 B CN 103822953B CN 201410060640 A CN201410060640 A CN 201410060640A CN 103822953 B CN103822953 B CN 103822953B
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- effect transistor
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Abstract
Backgate formula ion-sensitive field effect transistor, belongs to technical field of semiconductor device, relates to semiconductor biosensor.Comprise backing material, be positioned at the semiconductor channel layer material in backing material front, two top electrodes in semiconductor channel layer material front (source electrode and drain electrode); Semiconductor channel layer material shaper part channel region between source electrode and drain electrode, formation gate medium thinning with the backing material of channel region rear-face contact, the gate medium back side has inductive layer to biological detection object sensitivity or medium layer.The signal face of conventional ion sensitive field effect transistor and detection faces are separated from device two sides by the present invention, decrease the impact of signal electric field on detected biological object, thus improve detection sensitivity.Meanwhile, in conjunction with the channel region that high mobility semiconductor membraneous material makes, make the present invention have more high sensitivity and more high detection flux, the minimizing of two-sided processing technology and the device number of plies, be conducive to realizing miniaturization, be easy to integrated, be easy to realize detection arrays.
Description
Technical field
The invention belongs to technical field of semiconductor device, relate to semiconductor biosensor, especially a kind of ion-sensitive field effect transistor.
Background technology
Semiconductor biosensor is made up of the specific inductive layer material of semi-conductor electronic device with energy Selective recognition measured matter.The principle of inductive layer material identification measured matter is: measured matter, by the contact with inductive layer material, causes the electric property of semi-conductor electronic device to change, thus detects the state of corresponding biological object (as enzyme, antigen-antibody, cell and section etc.).This kind of sensor has advantage at aspects such as sensitivity, speed, microminiaturization and costs, obtains increasingly extensive concern and application in biological detection and analysis field.Common semiconductor biosensor has three kinds of typical structures: electrolyte-dielectric layer-semicoductor capacitor (Electrolyte-Insulator-Semiconductor, be called for short EIS) formula sensor, light addressing point level sensor (Light-AddressablePotentiometricSensors, be called for short LAPS), ion-sensitive field effect transistor (Ion-SensitiveField-EffectTransistors, be called for short ISFET).ISFET type biology sensor at present mainly with silicon as channel material.Compare the above two, ISFET structure is integrated in the microminiaturization of sensor array, technique, there is advantage in low cost, reliability etc., and the scope of application is larger.
Existing ion-sensitive field effect transistor is that to adopt be substrate with silicon substantially, and source, drain electrode and grid and induction zone exist together the structure of similar forward MOSFET (Metal-Oxide-SemiconductorFieldEffectTransistor) simultaneously.ISFET is using the ion in electrolyte environment between the interface of its gate dielectric layer surface and tested biological object as medium, the activity of measurand and state cause the change of gate charge and surface potential by the motion of ion, affect the conduction state of channel region, show as the change of the electrical parameters such as the threshold voltage of ISFET, source-drain current, mutual conductance, thus the activity of measurand and state are accurately sensed as field effect transistor electrical output signal.For namely the intensity improving device output signal improve the sensitivity to tested sample, with silicon nitride, SnO
2or TiO
2deng material as sensitive layer and adopt the proposition of the transistor of various forms of composite grid structure to improve the sensitivity of ion-sensitive field effect transistor to a certain extent.
Existing ion field effect transistor, due to its structure be source, drain electrode and grid and induction zone exist together forward MOSFET structure simultaneously, there is certain impact to tested sample in the signal electric field of the signal face electrode wiring between source, drain electrode, thus reduces the detection sensitivity of ion field effect transistor to biological detection object.Even if silicon nitride, SnO that channel layer materials adopts sensitivity higher
2or TiO
2deng material, the detection sensitivity of this kind of ion field effect transistor to biological detection object is appointed and is needed to be improved further.
Summary of the invention
The present invention proposes a kind of backgate formula ion-sensitive field effect transistor, adopt two-sided manufacture craft using as the source of signal face, drain region is made in device front, and be made in the device back side using as the grid of detection faces and induction zone, by the signal face of conventional ion sensitive field effect transistor and detection faces are separated from device two sides, obtain backgate formula ion-sensitive field effect transistor.
Technical solution of the present invention is:
Backgate formula ion-sensitive field effect transistor, as shown in Figure 2, its structure cell comprises backing material 1, is positioned at the semiconductor channel layer material 2 in backing material 1 front, semiconductor channel layer material 2 front has two top electrodes 4; In described two top electrodes 4, source electrode as device, another drain electrode as device; Semiconductor channel layer material 2 between source electrode and drain electrode forms the channel region of device, with the backing material of device channel region rear-face contact by the thinning formation gate medium of reduction process, the gate medium back side has inductive layer to biological detection object sensitivity or medium layer material 7.
Further, described reduction process can adopt but be not limited to photoetching process.
Further, described two top electrode 4 materials are metal or conductive film.
Further, described two top electrode (4) materials are metal or conductive film.
Further, described semiconductor channel layer material 2 adopts high mobility semiconductor membraneous material (its electron mobility is not less than 10
4cm
2/ Vs, as indium antimonide, carbon nano-tube, Graphene etc.), its thickness is between 100 ~ 200 nanometers.
Further, the energy gap of described backing material 1 is not less than the half of SiO2 energy gap, is namely greater than 0.7eV.
Further, the described inductive layer to biological detection object sensitivity or medium layer material 7 are not limited to monolayer material, also can be the composite bed of multiple material according to measurand.
Backgate formula ion-sensitive field effect transistor provided by the invention, adopt two-sided manufacture craft using as the source of signal face, drain region is made in device front, and be made in the device back side using as the grid of detection faces and induction zone, by the signal face of conventional ion sensitive field effect transistor and detection faces are separated from device two sides, greatly reduce and detection faces and signal face electrode wiring be placed in signal electric field existing for device one side to the impact of detected biological object, thus improve the detection sensitivity of device.Simultaneously, the channel region that this backgate formula ion-sensitive field effect transistor makes in conjunction with high mobility semiconductor membraneous material, the present invention is made to have more high sensitivity and more high detection flux, add the minimizing of two-sided processing technology and the device number of plies, be conducive to the miniaturization realizing device, be easy to integrated, be easy to realize detection arrays.The present invention is also applicable to the flexible device adopting flexible substrate, and this flexible device is suitable for realizing biology sensor, is also more suitable for realizing detection arrays.
Accompanying drawing explanation
Fig. 1 is the longitudinal cross-section schematic diagram in backgate formula ion sensitive field effect transistor manufacture process provided by the invention.
Fig. 2 is the longitudinal cross-section schematic diagram of backgate formula ion sensitive field effect transistor provided by the invention.
Reference numeral: 1 is backing material, 2 is semiconductor channel layer materials, and 3 is passivation separation layers, and 4 is top electrodes, and 5 is protective seams, and 6 is top electrode contact holes, and 7 is inductive layer to biological detection object sensitivity or medium layer material.
Embodiment
Backgate formula ion-sensitive field effect transistor, as shown in Figure 2, its structure cell comprises backing material 1, is positioned at the semiconductor channel layer material 2 in backing material 1 front, semiconductor channel layer material 2 front has two top electrodes 4; In described two top electrodes 4, source electrode as device, another drain electrode as device; Semiconductor channel layer material 2 between source electrode and drain electrode forms the channel region of device, with the backing material of device channel region rear-face contact by the thinning formation gate medium of reduction process, the gate medium back side has inductive layer to biological detection object sensitivity or medium layer material 7.
Further, described reduction process can adopt but be not limited to photoetching process.
Further, described two top electrode 4 materials are metal or conductive film.
Further, described two top electrode (4) materials are metal or conductive film.
Further, described semiconductor channel layer material 2 adopts high mobility semiconductor membraneous material (its electron mobility is not less than 10
4cm
2/ Vs, as indium antimonide, carbon nano-tube, Graphene etc.), its thickness is between 100 ~ 200 nanometers.
Further, the energy gap of described backing material 1 is not less than SiO
2the half of energy gap, is namely greater than 0.7eV.
Further, the described inductive layer to biological detection object sensitivity or medium layer material 7 are not limited to monolayer material, also can be the composite bed of multiple material according to measurand.
The method for making of new structure ion sensitive field effect transistor sensor provided by the invention is a lot, simply introduces wherein a kind of feasible manufacture method at this.It is emphasized that following explanation is only exemplary, instead of in order to limit the scope of the invention and apply.
First (energy gap is not less than SiO to select one to have suitable energy gap
2the half of energy gap, is namely greater than 0.7eV) substrate material layer 1, prepared by substrate a layer thickness 100 nanometer ~ 200 nanometer the layers of semiconductor thin-film materials 2(with high mobility can by sputtering method preparation);
Layers of semiconductor thin-film materials 2 is prepared one deck passivation separation layer 3, and etches source, drain region respectively, made source, the drain electrode 4 of employing conductive film material by sputtering;
Electrode is prepared the thin protective seam of one deck 5, to carry out successive substrates back process, as shown in Figure 1;
The etching substrate layer back side is to define corresponding gate medium sensitive zones;
Etch front protective seam forms the contact hole 6 of source, drain electrode;
According to actual institute test sample, this prepares inductive layer, medium layer or multiple composite bed 7 and tested sample desired structure on gate dielectric layer, as shown in Figure 2.
The above; be only a kind of feasible preparation method of the present invention, but protection scope of the present invention is not limited thereto, any be familiar with those skilled in the art invention disclose technical scope in; conversion can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (8)
1. backgate formula ion-sensitive field effect transistor, its structure cell comprises backing material (1), is positioned at the semiconductor channel layer material (2) in backing material (1) front, semiconductor channel layer material (2) front has two top electrodes (4); In described two top electrodes (4), source electrode as device, another drain electrode as device; Semiconductor channel layer material (2) between source electrode and drain electrode forms the channel region of device, with the backing material of device channel region rear-face contact by the thinning formation gate medium of reduction process, the gate medium back side has inductive layer to biological detection object sensitivity or medium layer material (7).
2. backgate formula ion-sensitive field effect transistor according to claim 1, is characterized in that, described reduction process adopts photoetching process.
3. backgate formula ion-sensitive field effect transistor according to claim 1, is characterized in that, described two top electrode (4) materials are metal or conductive film.
4. backgate formula ion-sensitive field effect transistor according to claim 1, is characterized in that, described semiconductor channel layer material (2) adopts high mobility semiconductor membraneous material, and its thickness is between 100 ~ 200 nanometers.
5. backgate formula ion-sensitive field effect transistor according to claim 4, is characterized in that, the electron mobility of described high mobility semiconductor membraneous material is not less than 10
4cm
2/ Vs.
6. backgate formula ion-sensitive field effect transistor according to claim 4, is characterized in that, described high mobility semiconductor membraneous material is indium antimonide, carbon nano-tube or Graphene.
7. backgate formula ion-sensitive field effect transistor according to claim 1, is characterized in that, the energy gap of described backing material (1) is not less than SiO
2the half of energy gap, is namely greater than 0.7eV.
8. backgate formula ion-sensitive field effect transistor according to claim 1, it is characterized in that, the described inductive layer to biological detection object sensitivity or medium layer material (7) are not limited to monolayer material, also can be the composite bed of multiple material according to measurand.
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| CN201410060640.1A CN103822953B (en) | 2014-02-24 | 2014-02-24 | Backgate formula ion-sensitive field effect transistor |
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| CN103822953B true CN103822953B (en) | 2016-02-03 |
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| CN104655000A (en) * | 2015-02-02 | 2015-05-27 | 上海集成电路研发中心有限公司 | Flexible active strain transducer structure and preparation method |
| CN107505376B (en) * | 2017-07-14 | 2020-02-21 | 浙江大学 | PH value sensing device based on field effect transistor structure and manufacturing method thereof |
| CN111521662A (en) * | 2020-04-23 | 2020-08-11 | 浙江大学 | Sensing chip and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102301227A (en) * | 2009-04-27 | 2011-12-28 | 夏普株式会社 | Chemical sensor |
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| JP4791342B2 (en) * | 2006-12-27 | 2011-10-12 | 株式会社堀場製作所 | Ion sensor and analyzer using the same |
| IL189576A0 (en) * | 2008-02-18 | 2008-12-29 | Technion Res & Dev Foundation | Chemically sensitive field effect transistors for explosive detection |
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| CN102301227A (en) * | 2009-04-27 | 2011-12-28 | 夏普株式会社 | Chemical sensor |
Non-Patent Citations (1)
| Title |
|---|
| Tailored Chemosensors for Chloroaromatic Acids Using Molecular Imprinted TiO2 Thin Films on Ion-Sensitive Field-Effect Transistors;Michal Lahav等;《Anal. Chem.》;20010201;第73卷(第3期);第721页以及图1 * |
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