CN103822953A - Back gate type ion-sensitive field effect transistor - Google Patents
Back gate type ion-sensitive field effect transistor Download PDFInfo
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- CN103822953A CN103822953A CN201410060640.1A CN201410060640A CN103822953A CN 103822953 A CN103822953 A CN 103822953A CN 201410060640 A CN201410060640 A CN 201410060640A CN 103822953 A CN103822953 A CN 103822953A
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Abstract
The invention discloses a back gate type ion-sensitive field effect transistor, belongs to the technical field of semiconductor devices, and relates to a semiconductor biosensor. The back gate type ion-sensitive field effect transistor comprises a substrate material, a semiconductor channel layer material positioned on the right surface of the substrate material, and two upper electrodes (comprising a source electrode and a drain electrode) positioned on the right surface of the semiconductor channel layer material; and the semiconductor channel layer material between the source electrode and the drain electrode forms a device channel region, the substrate material contacting the wrong surface of the channel region is thinned to form a gate medium, and the wrong surface of the gate medium is provided with an inductive layer or a medium layer sensitive to a biological detection object. The signal surface and the detection surface of a routine ion-sensitive field effect transistor are respectively arranged on two surfaces of a device in the invention, so the influence of a signal electric field on the biological detection object is reduced, thereby the detection sensitivity is improved. The channel region made by using the high-mobility semiconductor film material is also used, so the high sensitivity and the high detection flux are realized; and a double-surface processing technology and the reduction of the device layer number benefit the realization of small size, easy integration and easy formation of a detection array.
Description
Technical field
The invention belongs to technical field of semiconductor device, relate to semiconductor biosensor, especially a kind of ion-sensitive field effect transistor.
Background technology
Semiconductor biosensor is made up of semi-conductor electronic device and the specific inductive layer material of energy selectivity identification measured matter.The principle of inductive layer material identification measured matter is: measured matter by with the contacting of inductive layer material, cause that the electric property of semi-conductor electronic device changes, thereby detect the state of corresponding biological object (as enzyme, antigen-antibody, cell and section etc.).This class sensor has advantage at aspects such as sensitivity, speed, microminiaturization and costs, has obtained increasingly extensive concern and application in biological detection and analysis field.Common semiconductor biosensor has three kinds of typical structures: electrolyte-dielectric layer-semicoductor capacitor (Electrolyte-Insulator-Semiconductor, be called for short EIS) formula sensor, light addressing point level sensor (Light-Addressable Potentiometric Sensors, be called for short LAPS), ion-sensitive field effect transistor (Ion-Sensitive Field-Effect Transistors, be called for short ISFET).ISFET type biology sensor at present mainly with silicon as channel material.Compare the above two, the aspects such as ISFET structure is integrated in microminiaturization, the technique of sensor array, low cost, reliability have advantage, and the scope of application is larger.
Existing ion-sensitive field effect transistor is to adopt take silicon as substrate substantially, the exist together structure of similar forward MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) simultaneously of source, drain electrode and grid and induction zone.ISFET is using the ion in electrolyte environment between the interface of its gate dielectric layer surface and tested biological object as medium, the activity of measurand and state cause the variation of gate charge and surface potential by the motion of ion, affect the conduction state of channel region, show as the variation of the electrical parameters such as the threshold voltage, source-drain current, mutual conductance of ISFET, thereby the activity of measurand and state are accurately sensed as to field effect transistor electricity output signal.For the intensity that improves device output signal improve the sensitivity to tested sample, with silicon nitride, SnO
2or TiO
2deng material as sensitive layer and adopt the transistorized proposition of various forms of composite grid structures to improve to a certain extent the sensitivity of ion-sensitive field effect transistor.
Existing ion field effect transistor, due to its structure be source, drain electrode and grid and induction zone exist together one side forward MOSFET structure, there is certain impact to tested sample in the signal electric field of the signal face electrode wiring between source, drain electrode, thereby has reduced the detection sensitivity of ion field effect transistor to biological detection object.Even if channel layer materials adopts higher silicon nitride, the SnO of sensitivity
2or TiO
2deng material, this class ion field effect transistor is appointed and is needed further to be improved the detection sensitivity of biological detection object.
Summary of the invention
The present invention proposes a kind of back of the body grid formula ion-sensitive field effect transistor, adopt two-sided manufacture craft that source, drain region as signal face are made in to device front, and grid and induction zone as detection faces are made in to the device back side, by the signal face of conventional ion sensitive field effect transistor and detection faces are separated to device two sides, obtain carrying on the back grid formula ion-sensitive field effect transistor.
Technical solution of the present invention is:
Back of the body grid formula ion-sensitive field effect transistor, as shown in Figure 2, its structure cell comprises backing material 1, is positioned at the semiconductor channel layer material 2 in backing material 1 front, semiconductor channel layer material 2 fronts have two top electrodes 4; In described two top electrodes 4, source electrode as device, another drain electrode as device; Semiconductor channel layer material 2 between source electrode and drain electrode forms the channel region of device, the backing material contacting with the back side, device channel region forms gate medium by reduction process attenuate, and the gate medium back side has inductive layer or the medium layer material 7 to biological detection object sensitivity.
Further, described reduction process can adopt but be not limited to photoetching process.
Further, described two top electrode 4 materials are metal or conductive film.
Further, described two top electrodes (4) material is metal or conductive film.
Further, described semiconductor channel layer material 2 adopts high mobility semiconductor membraneous material (its electron mobility is not less than 10
4cm
2/ Vs, as indium antimonide, carbon nano-tube, Graphene etc.), its thickness is between 100～200 nanometers.
Further, the energy gap of described backing material 1 is not less than the half of SiO2 energy gap, is greater than 0.7eV.
Further, described inductive layer or medium layer material 7 to biological detection object sensitivity is not limited to monolayer material, also can be the composite bed of multiple material according to measurand.
Back of the body grid formula ion-sensitive field effect transistor provided by the invention, adopt two-sided manufacture craft that source, drain region as signal face are made in to device front, and grid and induction zone as detection faces are made in to the device back side, by the signal face of conventional ion sensitive field effect transistor and detection faces are separated to device two sides, greatly reduce detection faces and signal face electrode wiring have been placed in to the impact of the existing signal electric field of device one side on detected biological object, thereby improved the detection sensitivity of device.Simultaneously, the channel region that this back of the body grid formula ion-sensitive field effect transistor is made in conjunction with high mobility semiconductor membraneous material, make the present invention there is more high sensitivity and more high detection flux, add the minimizing of two-sided processing technology and the device number of plies, be conducive to realize the miniaturization of device, be easy to integratedly, be easy to realize detection arrays.The present invention is also applicable to adopt the flexible device of flexible substrate, and this flexible device is suitable for realizing biology sensor, is also more suitable for realizing detection arrays.
Accompanying drawing explanation
Fig. 1 is the longitudinal cross-section schematic diagram in back of the body grid formula ion sensitive field effect transistor manufacture process provided by the invention.
Fig. 2 is the longitudinal cross-section schematic diagram of back of the body grid formula ion sensitive field effect transistor provided by the invention.
Reference numeral: the 1st, backing material, the 2nd, semiconductor channel layer material, the 3rd, passivation separation layer, the 4th, top electrode, the 5th, protective seam, the 6th, top electrode contact hole, the 7th, the inductive layer to biological detection object sensitivity or medium layer material.
Embodiment
Back of the body grid formula ion-sensitive field effect transistor, as shown in Figure 2, its structure cell comprises backing material 1, is positioned at the semiconductor channel layer material 2 in backing material 1 front, semiconductor channel layer material 2 fronts have two top electrodes 4; In described two top electrodes 4, source electrode as device, another drain electrode as device; Semiconductor channel layer material 2 between source electrode and drain electrode forms the channel region of device, the backing material contacting with the back side, device channel region forms gate medium by reduction process attenuate, and the gate medium back side has inductive layer or the medium layer material 7 to biological detection object sensitivity.
Further, described reduction process can adopt but be not limited to photoetching process.
Further, described two top electrode 4 materials are metal or conductive film.
Further, described two top electrodes (4) material is metal or conductive film.
Further, described semiconductor channel layer material 2 adopts high mobility semiconductor membraneous material (its electron mobility is not less than 10
4cm
2/ Vs, as indium antimonide, carbon nano-tube, Graphene etc.), its thickness is between 100～200 nanometers.
Further, the energy gap of described backing material 1 is not less than SiO
2the half of energy gap, is greater than 0.7eV.
Further, described inductive layer or medium layer material 7 to biological detection object sensitivity is not limited to monolayer material, also can be the composite bed of multiple material according to measurand.
The method for making of new structure ion sensitive field effect transistor sensor provided by the invention is a lot, at this, a kind of feasible manufacture method wherein is simply introduced.Should be emphasized that, following explanation is only exemplary, rather than in order to limit the scope of the invention and to apply.
First (energy gap is not less than SiO to select one to have suitable energy gap
2the half of energy gap, is greater than 0.7eV) substrate material layer 1, on substrate, prepare the method preparation that the layers of semiconductor thin-film materials 2(with high mobility of a layer thickness 100 nanometer～200 nanometers can be by sputter);
In layers of semiconductor thin-film materials 2, prepare one deck passivation separation layer 3, and etch respectively source, drain region, make the source, the drain electrode 4 that adopt conductive film material by sputter;
On electrode, prepare the protective seam 5 that one deck is thin, to carry out successive substrates back process, as shown in Figure 1;
The etched substrate layer back side is to define corresponding gate medium sensitive zones;
Etching front protecting layer forms the contact hole 6 of source, drain electrode;
According to actual institute test sample, this prepares inductive layer, medium layer or multiple composite bed 7 and tested sample desired structure on gate dielectric layer, as shown in Figure 2.
The above; be only a kind of feasible preparation method of the present invention, but protection scope of the present invention is not limited to this, any be familiar with those skilled in the art invention disclose technical scope in; can expect easily conversion or replace, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (8)
1. back of the body grid formula ion-sensitive field effect transistor, its structure cell comprises backing material (1), be positioned at backing material (1) positive semiconductor channel layer material (2), semiconductor channel layer material (2) front has two top electrodes (4); In described two top electrodes (4), source electrode as device, another drain electrode as device; Semiconductor channel layer material (2) between source electrode and drain electrode forms the channel region of device, the backing material contacting with the back side, device channel region forms gate medium by reduction process attenuate, and the gate medium back side has inductive layer or the medium layer material (7) to biological detection object sensitivity.
2. back of the body grid formula ion-sensitive field effect transistor according to claim 1, is characterized in that, described reduction process adopts but is not limited to photoetching process.
3. back of the body grid formula ion-sensitive field effect transistor according to claim 1, is characterized in that, described two top electrodes (4) material is metal or conductive film.
4. back of the body grid formula ion-sensitive field effect transistor according to claim 1, is characterized in that, described semiconductor channel layer material (2) adopts high mobility semiconductor membraneous material, and its thickness is between 100～200 nanometers.
5. back of the body grid formula ion-sensitive field effect transistor according to claim 4, is characterized in that, the electron mobility of described high mobility semiconductor membraneous material is not less than 10
4cm
2/ Vs.
6. back of the body grid formula ion-sensitive field effect transistor according to claim 4, is characterized in that, described high mobility semiconductor membraneous material is indium antimonide, carbon nano-tube or Graphene.
7. back of the body grid formula ion-sensitive field effect transistor according to claim 1, is characterized in that, the energy gap of described backing material 1 is not less than SiO
2the half of energy gap, is greater than 0.7eV.
8. back of the body grid formula ion-sensitive field effect transistor according to claim 1, is characterized in that, described inductive layer or medium layer material 7 to biological detection object sensitivity is not limited to monolayer material, also can be the composite bed of multiple material according to measurand.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410060640.1A CN103822953B (en) | 2014-02-24 | 2014-02-24 | Backgate formula ion-sensitive field effect transistor |
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|---|---|---|---|
| CN201410060640.1A CN103822953B (en) | 2014-02-24 | 2014-02-24 | Backgate formula ion-sensitive field effect transistor |
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| Publication Number | Publication Date |
|---|---|
| CN103822953A true CN103822953A (en) | 2014-05-28 |
| CN103822953B CN103822953B (en) | 2016-02-03 |
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104655000A (en) * | 2015-02-02 | 2015-05-27 | 上海集成电路研发中心有限公司 | Flexible active strain transducer structure and preparation method |
| CN107505376A (en) * | 2017-07-14 | 2017-12-22 | 浙江大学 | A kind of pH sensor part and its manufacture method based on field-effect transistor structure |
| CN111521662A (en) * | 2020-04-23 | 2020-08-11 | 浙江大学 | Sensing chip and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008164359A (en) * | 2006-12-27 | 2008-07-17 | Horiba Ltd | Ion sensor and analyzer using the same |
| US20100325073A1 (en) * | 2008-02-18 | 2010-12-23 | Technion Research And Development Foundation Ltd. | Nitrogen oxide sensitive field effect transistors for explosive detection comprising functionalized non-oxidized silicon nanowires |
| CN102301227A (en) * | 2009-04-27 | 2011-12-28 | 夏普株式会社 | Chemical sensor |
-
2014
- 2014-02-24 CN CN201410060640.1A patent/CN103822953B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008164359A (en) * | 2006-12-27 | 2008-07-17 | Horiba Ltd | Ion sensor and analyzer using the same |
| US20100325073A1 (en) * | 2008-02-18 | 2010-12-23 | Technion Research And Development Foundation Ltd. | Nitrogen oxide sensitive field effect transistors for explosive detection comprising functionalized non-oxidized silicon nanowires |
| CN102301227A (en) * | 2009-04-27 | 2011-12-28 | 夏普株式会社 | Chemical sensor |
Non-Patent Citations (1)
| Title |
|---|
| MICHAL LAHAV等: "Tailored Chemosensors for Chloroaromatic Acids Using Molecular Imprinted TiO2 Thin Films on Ion-Sensitive Field-Effect Transistors", 《ANAL. CHEM.》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104655000A (en) * | 2015-02-02 | 2015-05-27 | 上海集成电路研发中心有限公司 | Flexible active strain transducer structure and preparation method |
| CN107505376A (en) * | 2017-07-14 | 2017-12-22 | 浙江大学 | A kind of pH sensor part and its manufacture method based on field-effect transistor structure |
| CN107505376B (en) * | 2017-07-14 | 2020-02-21 | 浙江大学 | PH value sensing device based on field effect transistor structure and manufacturing method thereof |
| CN111521662A (en) * | 2020-04-23 | 2020-08-11 | 浙江大学 | Sensing chip and manufacturing method thereof |
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|---|---|
| CN103822953B (en) | 2016-02-03 |
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