CN103746027A - 一种在ito导电薄膜表面刻蚀极细电隔离槽的方法 - Google Patents
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Abstract
一种在ITO导电薄膜表面刻蚀极细电隔离槽的方法，首先在ITO导电薄膜玻璃基底的反面溅射金属铬；将ITO导电薄膜玻璃基底固定在载物台上，有金属铬的一面在激光发射区域一侧，保持ITO导电薄膜一侧需要刻槽的区域不接触载物台；最后，利用皮秒激光进行后向刻蚀ITO导电薄膜，皮秒激光光束中心线必须与ITO导电薄膜表面保持垂直，而且皮秒激光的焦点位置在整个加工过程中须保持在ITO导电薄膜层上，本发明有效缩小薄膜太阳能电池中ITO薄膜表面槽宽，又保证皮秒激光加工的效率，提升薄膜太阳能电池制造的整体水平。
Description
技术领域
本发明属于微制造技术领域，具体涉及一种在ITO导电薄膜表面刻蚀极细电隔离槽的方法。
背景技术
目前，薄膜技术被应用到新型太阳能电池制造领域，成功解决晶体硅太阳能电池的高成本问题。由于在可见光区域内的透光率很高而且又具备很好的导电性，表面有电隔离槽的ITO导电薄膜被广泛用作薄膜太阳能电池的正表面电极。在薄膜太阳能电池的制作过程中，通常需要织构电隔离槽将整片ITO薄膜切割成若干单元，并且通过结构设计，使得各个单元之间形成串联结构，实现最佳的电压和电流配比。电隔离槽结构的尺度大小和精度等级是决定电池性能的重要因素，因此在精度可控的情况下，降低电隔离槽尺度显得非常必要。
现阶段薄膜太阳能电池槽结构的加工多是基于纳秒激光烧蚀或机械刻线两种方法来实现的。由于纳秒的脉冲宽度远大于材料的热扩散时间，因此在材料的烧蚀去除过程中，受热传导的影响，造成作用区域边缘状态的严重热影响和热损伤。将纳秒激光烧蚀加工用薄膜太阳能电池槽结构加工时，面临很多问题，例如加工出的微槽边缘出现突起，在局部到上层产生分流或短路；微槽边缘1‐2μm的范围内会存在微裂纹和局部材料的剥落，从而缩短太阳能电池的使用寿命；当激光脉冲迭加率过高时，由于热效应的累积，基底玻璃有可能被融化，势垒可能被破坏，以上问题严重阻碍了许多薄膜太阳能电池的正常商业化生产和使用。机械刻线的加工质量和效率比纳秒激光加工相比更差，刻出的微槽宽度很难达到50μm以下，微槽尺寸误差过大，同时伴有不规则的材料剥落，刻槽速度过低。纳秒激光烧蚀和机械刻划加工的上述问题使薄膜太阳能电池的高效高精度制造困难，已成为严重阻碍这种太阳电池发展的技术瓶颈。
发明内容
为了克服现有技术的不足，本发明的目的是提供一种在ITO导电薄膜表面刻蚀极细电隔离槽的方法，有效缩小薄膜太阳能电池中ITO薄膜表面槽宽，又保证皮秒激光加工的效率，提升薄膜太阳能电池制造的整体水平。
为了实现上述目的，本发明采取如下技术解决方案：
一种在ITO导电薄膜表面刻蚀极细电隔离槽的方法，包括以下步骤：
1)首先，在ITO导电薄膜玻璃基底的反面溅射40-50nm厚的金属铬；
2)其次，将ITO导电薄膜玻璃基底固定在载物台上，有金属铬的一面在激光发射区域一侧，保持ITO导电薄膜一侧需要刻槽的区域不接触载物台；
3)最后，利用波长为532nm，重频1KHz，脉宽10ps，功率为10‐12mw的皮秒激光，以0.3-0.4mm/s的速度进行后向刻蚀ITO导电薄膜，皮秒激光光束中心线必须与ITO导电薄膜表面保持垂直，而且皮秒激光的焦点位置在整个加工过程中须保持在ITO导电薄膜层上。
本发明的优点：利用皮秒激光能够使烧蚀材料直接到达高密度、高压和超热的等离子体状态的性质，克服了纳秒激光刻蚀中能量小的缺点。金属铬熔点较高而且熔沸点温度相差小，皮秒激光刻蚀后边缘几乎无熔化区域，再加上高温下金属铬氧化非常缓慢，铬膜可以很好的限制光斑直径，并且使透过光斑边缘非常整齐，从而使波长为532nm，重频1KHz，脉宽10ps，功率为10-12mw的皮秒激光在ITO导电薄膜刻蚀的极细电隔离槽能精度可控，使皮秒激光可刻蚀电隔离槽的宽度达到3μm以下，并同时具有高加工效率和加工质量，可进一步提高薄膜太阳能电池的材料利用率，改善了电池性能。
附图说明
图1为实施例1和实施例2中ITO导电薄膜的玻璃载体反面溅射铬膜示意图。
图2为实施例1和实施例例2中皮秒激光透过铬膜后向加工ITO导电薄膜示意图。
图3为实施例3中ITO导电薄膜的玻璃载体反面溅射铬膜示意图。
图4为实施例3中皮秒激光透过铬膜后向加工ITO导电薄膜示意图。
图5为实施例1中利用激光共聚焦显微镜放大1000倍拍摄的ITO导电薄膜极细电隔离槽三维结构图。
图6为实施例2中利用激光共聚焦显微镜放大1000倍拍摄的ITO导电薄膜极细电隔离槽三维结构图。
图7为实施例3中利用激光共聚焦显微镜放大1000倍拍摄的ITO导电薄膜极细电隔离槽三维结构图。
具体实施方式
下面结合附图和实施例对本发明做详细描述。
实施例1
一种在ITO导电薄膜表面刻蚀极细电隔离槽的方法，包括以下步骤：
1)首先，在ITO导电薄膜玻璃基底的反面溅射50nm厚的金属铬，如图1所示；
2)其次，将ITO导电薄膜玻璃基底固定在载物台上，有金属铬的一面在激光发射区域一侧，保持ITO导电薄膜一侧需要刻槽的区域不接触载物台；
3)最后，利用波长为532nm，重频1KHz，脉宽10ps，功率为12mw的皮秒激光，使用焦距为25mm聚焦透镜，以0.3mm/s的速度进行后向刻蚀ITO导电薄膜，并且皮秒激光光束中心线必须与ITO导电薄膜表面保持垂直，焦点位置在整个加工过程中须保持在ITO导电薄膜层上，如图2所示。图5为激光共聚焦显微镜放大1000倍拍摄的刻蚀出极细电隔离槽三维结构图，刻蚀极细槽槽宽在1.7μm，ITO层已经完全被槽分割为两部分。
实施例2
一种在ITO导电薄膜表面刻蚀极细电隔离槽的方法，包括以下步骤：
1)首先，在ITO导电薄膜玻璃基底的反面溅射50nm厚的金属铬，如图1所示；
2)其次，将ITO导电薄膜玻璃基底固定在载物台上，有金属铬的一面在激光发射区域一侧，保持ITO导电薄膜一侧需要刻槽的区域不接触载物台；
3)最后，利用波长为532nm，重频1KHz，脉宽10ps，功率为10mw的皮秒激光，使用焦距为25mm的透镜聚焦，以0.4mm/s的速度进行后向刻蚀ITO导电薄膜，并且皮秒激光光束中心线必须与ITO导电薄膜表面保持垂直，焦点位置在整个加工过程中须保持在ITO导电薄膜层上，如图2所示。图6是激光共聚焦显微镜放大1000倍拍摄的刻蚀出极细电隔离槽三维结构图，刻蚀细槽槽宽在1.6μm，ITO层已经完全被槽分割为两部分。
实施例3
一种在ITO导电薄膜表面刻蚀极细电隔离槽的方法，包括以下步骤：
1)首先，在ITO导电薄膜玻璃基底的反面溅射40nm厚的金属铬，如图3所示；
2)其次，将ITO导电薄膜玻璃基底固定在载物台上，有金属铬的一面在激光发射区域一侧，保持ITO导电薄膜一侧需要刻槽的区域不接触载物台；
3)最后，利用波长为532nm，重频1KHz，脉宽10ps，功率为12mw的皮秒激光，使用焦距为25mm聚焦透镜，以0.3mm/s的扫描速度进行后向刻蚀ITO导电薄膜，并且皮秒激光光束中心线必须与ITO导电薄膜表面保持垂直，焦点位置在整个加工过程中须保持在ITO导电薄膜层上，如图4所示。图7为激光共聚焦显微镜放大1000倍拍摄的刻蚀出极细电隔离槽结构三维图，刻蚀极细槽槽宽为2.3μm，ITO层已经完全被槽分割为两部分。
Claims (4)
1.一种在ITO导电薄膜表面刻蚀极细电隔离槽的方法，其特征在于，包括以下步骤：
1)首先，在ITO导电薄膜玻璃基底的反面溅射40-50nm厚的金属铬；
2)其次，将ITO导电薄膜玻璃基底固定在载物台上，有金属铬的一面在激光发射区域一侧，保持ITO导电薄膜一侧需要刻槽的区域不接触载物台；
3)最后，利用波长为532nm，重频1KHz，脉宽10ps，功率为10‐12mw的皮秒激光，以0.3-0.4mm/s的速度进行后向刻蚀ITO导电薄膜，皮秒激光光束中心线必须与ITO导电薄膜表面保持垂直，而且皮秒激光的焦点位置在整个加工过程中须保持在ITO导电薄膜层上。
2.根据权利要求1所述的一种在ITO导电薄膜表面刻蚀极细电隔离槽的方法，其特征在于，包括以下步骤：
1)首先，在ITO导电薄膜玻璃基底的反面溅射50nm厚的金属铬；
2)其次，将ITO导电薄膜玻璃基底固定在载物台上，有金属铬的一面在激光发射区域一侧，保持ITO导电薄膜一侧需要刻槽的区域不接触载物台；
3)最后，利用波长为532nm，重频1KHz，脉宽10ps，功率为12mw的皮秒激光，使用焦距为25mm聚焦透镜，以0.3mm/s的速度进行后向刻蚀ITO导电薄膜，并且皮秒激光光束中心线必须与ITO导电薄膜表面保持垂直，焦点位置在整个加工过程中须保持在ITO导电薄膜层上。
3.根据权利要求1所述的一种在ITO导电薄膜表面刻蚀极细电隔离槽的方法，其特征在于，包括以下步骤：
1)首先，在ITO导电薄膜玻璃基底的反面溅射50nm厚的金属铬；
2)其次，将ITO导电薄膜玻璃基底固定在载物台上，有金属铬的一面在激光发射区域一侧，保持ITO导电薄膜一侧需要刻槽的区域不接触载物台；
3)最后，利用波长为532nm，重频1KHz，脉宽10ps，功率为10mw的皮秒激光，使用焦距为25mm的透镜聚焦，以0.4mm/s的速度进行后向刻蚀ITO导电薄膜，并且皮秒激光光束中心线必须与ITO导电薄膜表面保持垂直，焦点位置在整个加工过程中须保持在ITO导电薄膜层上。
4.根据权利要求1所述的一种在ITO导电薄膜表面刻蚀极细电隔离槽的方法，其特征在于，包括以下步骤：
1)首先，在ITO导电薄膜玻璃基底的反面溅射40nm厚的金属铬；
2)其次，将ITO导电薄膜玻璃基底固定在载物台上，有金属铬的一面在激光发射区域一侧，保持ITO导电薄膜一侧需要刻槽的区域不接触载物台；
3)最后，利用波长为532nm，重频1KHz，脉宽10ps，功率为12mw的皮秒激光，使用焦距为25mm聚焦透镜，以0.3mm/s的扫描速度进行后向刻蚀ITO导电薄膜，并且皮秒激光光束中心线必须与ITO导电薄膜表面保持垂直，焦点位置在整个加工过程中须保持在ITO导电薄膜层上。
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