CN103745919B - 一种铁电存储器的制造方法 - Google Patents
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- 125000002769 thiazolinyl group Chemical group 0.000 claims description 5
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Abstract
本发明公开了一种铁电存储器的铁电薄膜电容的制造方法,包括:设置基底层1,上电极层2、上电极缓冲层3、铁电薄膜层4、下电极缓冲层5、下电极层6、粘结层7和阻挡层8按照从上至下的顺序顺次粘结固定在一起,阻挡层8粘结固定在硅基底层1上。其中多取代基的硅杂环己二烯掺杂到铅锆钛薄膜层中,形成铁电薄膜层4。
Description
技术领域
本发明涉及用于铁电存储器的铁电薄膜电容,属于铁电薄膜技术领域。
背景技术
基于半导体的非易失性存储器在数据存储和作为转盘存储器的替代物的方面是有用的。已发现基于闪存EEPROM单元的存储器越来越多地用在计算机和消费者装置例如照相机、mp3播放器和PDA中。闪存EEPROM存储器的成本已降低到这种存储器正在计算机中用作磁盘驱动器的替代物的程度。因为半导体磁盘驱动器需要显著较低的功率、防震、并且典型地比在膝上计算机系统中利用的常规磁盘驱动器更快,所以半导体磁盘驱动器是对膝上计算机特别有吸引力的。
铁电存储器是一种特殊工艺的非易失性的存储器,它采用人工合成的铅锆钛PZT材料形成存储器结晶体。铁电存储器在掉电后仍然能够继续保存数据,写入速度快且具有无限次写入寿命,不容易写坏。因此,与闪存和EEPROM等较早期的非易失性内存技术比较,铁电存储器具有更高的写入速度和更长的读写寿命。
PZT铁电电容作为铁电存储器的主要存储介质,具有较大的疲劳速率和较差的漏电流特性,由于在金属Pt上制备的铁电薄膜结晶性能较差,使得PZT铁电电容的性能差,漏电流大。同时,当前的铁电存储器还具有很多缺点。存储器的成本依据很高,读写寿命不够长久,容易损坏等问题。
发明内容
本发明在铅锆钛(PZT)材料中掺入有机材料,使得铁电膜具有如下良好性能:与电极结合得好,结晶性能好,漏电流小,疲劳特性优良,读写速度快,增加铁电存储器的寿命,而使得铁电存储器不容易损坏。
一种铁电存储器的铁电薄膜电容的制造方法,包括:
设置基底层1,上电极层2、上电极缓冲层3、铁电薄膜层4、下电极缓冲层5、下电极层6、粘结层7和阻挡层8按照从上至下的顺序顺次粘结固定在一起,阻挡层8粘结固定在硅基底层1上。
其中多取代基的硅杂环己二烯掺杂到铅锆钛薄膜层中,形成铁电薄膜层4,作为多取代基的硅杂环己二烯。
多种取代基的硅杂环己二烯:
式(1)中,R1、R2相同或不同,代表烷基或芳基;R3代表氢、醛基、酮基、酯基、磷酸基;R4代表烷基、芳基;R5代表氢、烷基、烯基、芳基;R6代表烷基、芳基。上述的烷基优选C1-C6的直链或支链烷基,如甲基、乙基、丙基、异丙基、丁基、异丁基、戊基、己基等。
本发明的优选多取代硅杂环己二烯选自下列化合物Ia~If:
Ia:R1=R2=Me,R3=COOMe,R4=Ph,R5=H,R6=Ph;
Ib:R1=R2=Ph,R3=COOMe,R4=Ph,R5=H,R6=Ph;
Ic:R1=R2=Me,R3=COPh,R4=Ph,R5=H,R6=Ph;
Id:R1=R2=Me,R3=COOMe,R4=Ph,R5=(1-丙基)-1-戊烯基,R6=Ph;
Ie:R1=R2=Me,R3=COOMe,R4=Bu,R5=Et,R6=Bu;
If:R1=R2=Ph,R3=COOMe,R4=Bu,R5=Et,R6=Bu。
附图说明
图1为本发明铁电存储器的铁电薄膜电容的结构示意图。
具体实施方式
为了使本领域技术人员更清楚的理解本发明的技术方案,下面结合附图描述其具体实施方式。
铁电存储器的铁电薄膜电容,硅基底层1,它还包括上电极层2、上电极缓冲层3、铁电薄膜层4、下电极缓冲层5、下电极层6、粘结层7和阻挡层8。
本发明在铅锆钛(PZT)材料中掺入有机材料,发明的图示的结构为一般铁电存储器的铁电薄膜电容结构的剖面图。
多取代基的硅杂环己二烯掺杂到铅锆钛薄膜层中,形成铁电薄膜层4,作为多取代基的硅杂环己二烯。
多种取代基的硅杂环己二烯:
式(1)中,R1、R2相同或不同,代表烷基或芳基;R3代表氢、醛基、酮基、酯基、磷酸基;R4代表烷基、芳基;R5代表氢、烷基、烯基、芳基;R6代表烷基、芳基。上述的烷基优选C1-C6的直链或支链烷基,如甲基、乙基、丙基、异丙基、丁基、异丁基、戊基、己基等。上述芳基优选苯基和取代苯基,所述取代苯例如甲苯基、对甲氧苯基等。上述酮基优选-COR,其中R代表甲基、乙基、丙基、苯基等。上述酯基优选-COOR′,其中R′代表甲基、乙基、丙基、苯基等。上述烯基优选C2-C8的链烯基,例如:乙烯基、丙稀基、丁烯基、戊烯基等。
本发明的优选多取代硅杂环己二烯选自下列化合物Ia~If:
Ia:R1=R2=Me,R3=COOMe,R4=Ph,R5=H,R6=Ph;
Ib:R1=R2=Ph,R3=COOMe,R4=Ph,R5=H,R6=Ph;
Ic:R1=R2=Me,R3=COPh,R4=Ph,R5=H,R6=Ph;
Id:R1=R2=Me,R3=COOMe,R4=Ph,R5=(1-丙基)-1-戊烯基,R6=Ph;
Ie:R1=R2=Me,R3=COOMe,R4=Bu,R5=Et,R6=Bu;
If:R1=R2=Ph,R3=COOMe,R4=Bu,R5=Et,R6=Bu。
下面,详细说明本发明的实施例,但本发明并不限定于此。
根据图示剖面结构,设置铁电存储器电容,设置基底层1,上电极层2、上电极缓冲层3、铁电薄膜层4、下电极缓冲层5、下电极层6、粘结层7和阻挡层8按照从上至下的顺序顺次粘结固定在一起,阻挡层8粘结固定在硅基底层1上。
其中多取代硅杂环己二烯,使用本领域常用技术手段掺杂到铅锆钛薄膜层中,形成厚度为300nm至310nm的薄膜层。
粘结层7可以采用二氧化钛粘结层,厚度为10-14nm;上电极缓冲层3和下电极缓冲层5均采用超大磁电阻材料制成;上电极缓冲层3的厚度为80-110nm;下电极缓冲层5的厚度为20-25nm;阻挡层8为二氧化硅阻挡层,厚度为40-60nm;上电极层2和下电极层6均为铂电极层,下电极层6的厚度可以为80-170nm,上电极层2的厚度为70-90nm。
当然,本发明还可有其他多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。
Claims (4)
1.一种铁电存储器的铁电薄膜电容的制造方法,其特征在于,包括:
设置基底层(1),上电极层(2)、上电极缓冲层(3)、铁电薄膜层(4)、下电极缓冲层(5)、下电极层(6)、粘结层(7)和阻挡层(8)按照从上至下的顺序顺次粘结固定在一起,阻挡层(8)粘结固定在硅基底层(1)上;
其中多取代基的硅杂环己二烯掺杂到铅锆钛薄膜层中,形成铁电薄膜层(4);
多种取代基的硅杂环己二烯;
式(1)中,R1、R2相同或不同,代表烷基或芳基;R3代表氢、醛基、酮基、酯基或磷酸基;R4代表烷基、芳基;R5代表氢、烷基、烯基或芳基;R6代表烷基或芳基。
2.根据权利要求1所述的铁电存储器的铁电薄膜电容的制造方法,其特征在于,所述的烷基为C1-C6的直链或支链烷基。
3.根据权利要求2所述的铁电存储器的铁电薄膜电容的制造方法,其特征在于,所述的C1-C6的直链或支链烷基选自甲基、乙基、丙基、异丙基、丁基、异丁基、戊基或已基。
4.如权利要求1所述的铁电存储器的铁电薄膜电容的制造方法,其特征在于,所述芳基选自苯基和取代苯基,所述取代苯基为甲苯基或对甲氧苯基;所述酮基选自-COR,其中R代表甲基、乙基、丙基或苯基;所述酯基选自-COOR',其中R'代表甲基、乙基、丙基或苯基;所述烯基选自乙烯基、丙稀基、丁烯基或戊烯基;
所述多取代基的硅杂环己二烯选自下列化合物Ia~If:
Ia:R1=R2=Me,R3=COOMe,R4=Ph,R5=H,R6=Ph;
Ib:R1=R2=Ph,R3=COOMe,R4=Ph,R5=H,R6=Ph;
Ic:R1=R2=Me,R3=COPh,R4=Ph,R5=H,R6=Ph;
Id:R1=R2=Me,R3=COOMe,R4=Ph,R5=(1丙基)-1-戊烯基,R6=Ph;
Ie:R1=R2=Me,R3=COOMe,R4=Bu,R5=Et,R6=Bu;
If:R1=R2=Ph,R3=COOMe,R4=Bu,R5=Et,R6=Bu。
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CN101284845A (zh) * | 2007-04-10 | 2008-10-15 | 北京大学 | 一种多取代硅杂环己二烯及其合成方法 |
CN203013724U (zh) * | 2013-01-25 | 2013-06-19 | 黑龙江大学 | 用于铁电存储器的铁电薄膜电容 |
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CN101159271A (zh) * | 2007-11-16 | 2008-04-09 | 华中科技大学 | 一种铁电存储器用铁电薄膜电容及其制备方法 |
CN203013724U (zh) * | 2013-01-25 | 2013-06-19 | 黑龙江大学 | 用于铁电存储器的铁电薄膜电容 |
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