CN103733321A - 半导体装置的制造方法及半导体装置 - Google Patents
半导体装置的制造方法及半导体装置 Download PDFInfo
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- CN103733321A CN103733321A CN201280037004.6A CN201280037004A CN103733321A CN 103733321 A CN103733321 A CN 103733321A CN 201280037004 A CN201280037004 A CN 201280037004A CN 103733321 A CN103733321 A CN 103733321A
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Abstract
本发明包括下述工序:分别准备半导体元件(1)、至少表面的主要元素为Cu的基板(2)、形状比所述半导体元件小的ZnAl共晶焊料片(3’);以各自的接合面彼此相对的方式配置所述半导体元件和所述基板,在该基板和半导体元件之间夹设所述ZnAl共晶焊料片;一边对夹设在所述基板和所述半导体元件之间的所述ZnAl共晶焊料片施加载荷(31),一边进行升温,使所述ZnAl共晶焊料片融解而形成ZnAl焊料层;以及一边对所述ZnAl焊料层施加载荷一边进行降温。
Description
技术领域
本发明涉及由锌铝类接合材料将半导体元件和基板接合的半导体制造方法及通过该方法得到的半导体装置。
背景技术
碳化硅(SiC)或氮化稼(GaN)、金刚石(C)等宽带隙半导体,能够在较高的动作电压下流过大电流,因此,对于使用焊料的接合部分也要求较高的耐热性。因此,作为功率半导体装置等高温动作设备的接合材料,提出锌铝类ZnAl共晶焊料(专利文献1)。
专利文献1:日本特开2009-125753号公报
发明内容
但是,本发明的发明人尝试使用上述专利文献1中公开的接合方法,将功率半导体元件与基板接合时,确认接合强度的波动很大。
本发明的目的在于抑制半导体元件与基板的接合强度的波动,提高所得到的产品的成品率。
本发明通过对夹设在半导体元件和表面的主要元素为Cu的基板之间的ZnAl共晶焊料一边施加载荷一边进行升温而使其熔融,再一边施加载荷一边降温,从而实现上述目的。
发明的效果
根据本发明,ZnAl共晶相组织向ZnAl共析相组织变化,ZnAl焊料层变为ZnAl共晶相较少而Zn相及ZnAl共析相较多的组织。由此,能够抑制相界面上的应力差,其结果,能够抑制接合强度的波动,提高所得到的产品的成品率。
附图说明
图1是表示本发明的一个实施方式所涉及的半导体装置的剖视图。
图2是用于说明图1的半导体装置的制造方法的剖视图。
图3是使用专利文献1所记载的方法制造的半导体装置的剖面的扫描电子显微镜照片。
图4是使用图2的半导体装置的制造方法制成的半导体装置的剖面的扫描电子显微镜照片。
图5是表示使用图2的半导体装置的制造方法制成的半导体装置的剪切强度的温度特性的曲线图。
具体实施方式
参照图1的剖视图,说明本发明的一个实施方式所涉及的半导体装置的构造。将图1中示出的半导体元件1/ZnAl焊料层3/基板2的构造,称为本例的半导体装置。此外,图1及图2是为了容易理解本发明而示意地表示的附图,有时会将厚度与平面尺寸的关系、以及各层的厚度的比例等夸张表示。
另外,在以下的说明中,以作为半导体元件使用SiC功率元件、作为基板使用在SiN陶瓷板的两个面上粘贴Cu板的基板的情况为例,对本发明进行具体说明,但上述情况是一个例子,作为半导体元件,可以使用GaN元件、金刚石元件、ZnO元件等其它宽带隙半导体元件,或使用以高温下使用为目的的Si半导体元件(SOI元件或传感器元件)等。另外,作为基板,不限定于粘贴在SiN陶瓷板上的Cu,可以是粘贴在其它种类的陶瓷基板上的Cu基板,可以是粘贴在其它种类的陶瓷基板(Al2O3或AlN等)或绝缘体上的除了Cu以外的金属基板(Al或CuMo等),此外,也可以是由Cu或除了Cu以外的金属单体(没有陶瓷板或绝缘板)构成的单纯的金属板。
标号1是碳化硅(SiC)功率半导体元件,在背面形成欧姆接触部11,在欧姆接触部11的表面覆盖有安装电极12,以改善焊料的濡湿性、防止焊料侵入、提高附着力等。作为安装电极12,能够举出例如Ti/Ni/Ag层叠蒸镀膜(Ti与欧姆接触部11接触、且Ag为最外层表面的层构造)。
标号2是基板。本例的基板2的构造为,在SiN陶瓷板20的至少一个表面上,通过焊接等粘贴Cu或Al等金属板21。金属板21的表面由相对于焊料具有濡湿性、附着性、防渗性的金属,例如Ni或Pt、Pd、或者含有这些金属的金属膜22覆盖。此外,在金属膜22的表面,覆盖形成厚度为20nm至200nm、以Cu为主要元素的Cu类金属膜23。
在所述半导体元件1和基板2之间夹持ZnAl焊料层3。本例的ZnAl焊料层3的Zn和Al的组成,优选为共晶组成(Al浓度=5质量%)或者大致共晶组成(Al浓度=5±2质量%)。另外,为了改善焊料的硬度、接合时的濡湿性、熔融液体的粘度,在ZnAl焊料层3中还可以含有少量(小于或等于1质量%)Ge、P等其它元素。在本发明的半导体装置中,ZnAl焊料层3的厚度并不特别限定,但实际使用中优选小于或等于约100μm,进一步优选小于或等于50μm,最优选小于或等于30μm。
本例所涉及的ZnAl焊料层3的构造的特征在于,作为ZnAl焊料层3的组成,虽然是共晶组成或者大致共晶组成,但其组织构造中均完全不含有共晶组织,或者即使含有共晶组织也小于或等于20%。关于这一点,如后所述。
下面,对于上述构造的半导体装置的制造方法进行说明。首先,准备下述规格的前驱材料A至C。
前驱材料A是上述图1中示出的碳化硅(SiC)制的功率半导体元件1。市售的碳化硅(SiC)的功率半导体元件1实际上大致就是图1中示出的构造,因此,使用这种构造即可,无需为了实施本发明而进行特别的改变。
前驱材料B是上述图1中示出的基板2。配置在基板2的表面的Cu具有容易与融解的ZnAl焊料的Zn组分合金化的性质。因此,具有下述作用:促进融解的ZnAl共晶焊料濡湿扩散,有助于缩短回流时间,同时减小所形成的ZnAl焊料层3的厚度。此外,该基板2广泛市售,容易获得。
前驱材料C是调制为共晶组成(Al浓度=5质量%)或大致共晶组成(Al浓度=5±2质量%以内)的片状的ZnAl焊料片3’。使ZnAl焊料片3’的尺寸比上述半导体元件1的芯片尺寸小。在本例中,ZnAl焊料片3’的厚度优选小于或等于50μm,更加优选为30μm。此外,ZnAl焊料片3’在接合之前暴露在大气中,因此当然会在表面形成有自然氧化膜。但是,在本例中,即使是这种ZnAl焊料片3’,也能够顺利地制造半导体装置。
如果前驱材料A至C的准备完成,则使用丙酮或异丙醇等溶剂进行有机清洁,去除附着在这些前驱材料表面上的污染物。
然后,将前驱材料A至C设置在减压回流装置中。减压回流装置5构成为,具有能够减压至5毫巴程度的排气能力,能够导入纯度大于或等于99.99%的非活性气体(氮气或氩气)。
图2是表示设置在减压回流装置的试料室(放置有回流台30的腔室)中的前驱材料A至C的剖视图,如该图所示,在回流台30上放置基板2,对准基板2上的应进行接合的部位而重合ZnAl焊料片3’和使接合面朝向下方的半导体元件1,在该半导体元件1的上方放置载荷部件31。
在这里,存在对于本例的半导体装置制造来说非常重要的几点。第1点是ZnAl焊料片3’的放置方法。在使ZnAl焊料片3’与半导体元件1重合时,关键是将ZnAl焊料片3’以与半导体元件1的外周相比不伸出的方式放置。如果使ZnAl焊料片3’的尺寸小于半导体元件1的尺寸,以使ZnAl焊料片3’不伸出至半导体元件1的外周的方式放置而施加载荷,且使其融解,则包裹ZnAl焊料熔融液体的Zn或Al的自然氧化膜的外皮瞬间破碎,能够短时间且再现性良好地发生熔融液体与基板2、以及熔融液体与半导体元件1的接合反应。另外,能够将制成的ZnAl焊料层3控制得较薄且厚度恒定。
第2点是使用静态载荷部件31。在本例中,为了形成良好的接合,在焊料融解时对半导体元件1施加稳定的压力。所需的载荷优选大于或等于0.1g/cm2,更加优选大于或等于0.3g/cm2。例如,对于4mm2的半导体元件1,优选使用大于或等于0.4g的载荷,更加优选大于或等于1.2g的载荷即可。特别地,在使用大于或等于0.3g/cm2载荷的情况下,能够使得ZnAl焊料层3的厚度更薄,使其小于或等于50μm,该厚度具有不易形成共晶相组织的性质。
如果上述准备完成,则执行回流工序。
首先进行减压回流装置的试料室的排气。如果试料室内的压力小于或等于5毫巴,则导入非活性气体。多次进行上述操作,用非活性气体置换试料室内的空气。由此,试料室充满非活性气体。
然后,对回流台30或试料室整体进行加热,将上述前驱材料A至C的温度升温至大约200℃,保持该温度大约2分钟。这时,也可以导入含有甲酸蒸气的非活性气体,促进污染有机物的去除。
然后,停止导入非活性气体,再次开始排气,使试料室减压至小于或等于5毫巴,并且,进一步对回流台30或试料室整体进行加热,使前驱材料A至C升温至在ZnAl焊料片3’的液相线温度~420℃的温度范围内确定的规定温度并保持。保持时间最长5分钟就足够了。在将规定温度设为415℃情况下的典型的保持时间是1分钟。如果超过熔点(382℃),则ZnAl焊料片3’变为熔融液体,被载荷部件31的载荷压溃,以放射状在半导体元件1周围的基板2上濡湿扩散。
然后,向试料室导入非活性气体,如果上升至规定的压力,则立即开始对回流台30或试料室整体进行降温。在这里,优选在温度低于ZnAl合金的共析温度275℃时,一边暂时保持温度或逐渐冷却,一边进行几分钟至几十分钟的退火。该退火工序对于将ZnAl焊料层3中含有的有害且热不稳定的ZnAl共晶相组织转换为ZnAl共析相组织和Zn相组织来说有效。换言之,退火工序具有减少在ZnAl共晶焊料熔融液体急速凝固时产生的共晶相组织的效果。但是,在回流时使用大于或等于0.3g/cm2的载荷部件31的情况下,该转换在非常短的时间进行,因此能够省略该退火工序。
然后,如果将回流台30或试料室整体冷却至室温,则本例的半导体装置完成。
另外,专利文献1中记载的使用ZnAl共晶焊料的半导体装置的接合强度波动很大,很难制造出实用的装置。本申请的发明人对上述的大量不良样本进行仔细观察后,解释其原因如下。
具体来说,在使用ZnAl共晶焊料3’的半导体元件1/ZnAl焊料层3/基板2的ZnAl焊料层3中,通常形成有高浓度的ZnAl共晶相组织,如图3的剖面SEM(扫描电子显微镜)照片所示,该共晶相组织(看起来为珍珠贝的贝壳纹理的区域)和其它组织即Zn相组织(白色的对比度均匀的区域)和ZnAl共析相组织(分散有较小的黑点的区域)的界面上,会产生大量的微裂纹。
并且,如果共晶相组织的含有率超过20%,则微裂纹迅速相连,容易在共晶相组织的界面上形成较大的裂纹,其结果,接合强度显著降低。由于该裂纹的开裂方式不均匀,可以推测接合强度也不均匀。通常认为这是由于存在多种组织,因而在其界面上产生应力差,结果产生了微裂纹。
因此,本发明的发明人考虑只要使ZnAl共晶相组织的形成小于或等于20%即可,并对可行的制造方法进行了研究,成功地通过上述制造方法实际形成了上述构造,并且,确认了能够通过上述组织构造,制造出具有充分的接合强度的半导体装置。图4是通过上述的本例的制造方法制成的碳化硅半导体元件1/ZnAl焊料层3/基板2的ZnAl焊料层3的剖面SEM照片。
可知图示样本的ZnAl焊料层3,仅由Zn相组织和ZnAl共析相组织构成,完全不含有共晶相组织。此外,该照片是将ZnAl焊料层3的厚度设为小于或等于50μm的样本的典型的剖面SEM照片,可确认,ZnAl焊料层3的厚度大于50μm的样本,基本上也具有与该照片相同的剖面构造(仅焊料层3的厚度较大这一点不同)。
另外,通过芯片剪切(剪切)试验对本例的具有碳化硅半导体元件1/ZnAl焊料层3/基板2构造的半导体装置的接合强度进行评价。这时的碳化硅半导体元件1的尺寸为2×2mm2。图5是使横轴的试验温度从室温变化至300℃为止而对接合强度进行测定,绘制所得到的接合强度的平均值相对于试验温度的曲线而成。
从该图可知,室温的接合强度(平均值)为大约120MPa,该值相当于针对半导体装置的接合强度所制定的国际规格(IEC60749-19)的大约20倍的极优异的值。另外,从该图可知,虽然接合强度随着试验温度的上升而逐渐降低,但在300℃仍具有约为规格的7倍的强度。
如上所述,本例的半导体装置的焊料层3由ZnAl共晶焊料构成,因此,其熔点(=液相线温度=固相线温度=共晶温度)较低,为382℃左右,其结果,能够通过温度小于或等于420℃×5分钟以内的软钎焊处理制造半导体装置。并且,由于这么短时间的软钎焊处理而产生的半导体装置的劣化是可忽略的程度。即,根据本例,能够抑制在钎焊接合时,半导体装置不耐热而发生故障的问题。
另外,由于由公知的单纯的ZnAl共晶焊料构成焊料层3,因此不需要特殊覆膜加工,不会造成用于制造焊料的成本上升。即,根据本例,不需要制造包覆有易还原金属(Cu、Ag、Au)的特殊ZnAl焊料,ZnAl焊料的制造成本也较低。
此外,根据本例,如图5所示,能够制造具有充分接合强度的半导体装置。特别地,本例的接合工序,是对于环境气氛的氧浓度不敏感的接合工序,能够使用在PbSn焊料接合中普遍采用的通用减压回流装置及气体而容易地实现。其结果,不需要安装具有防爆功能等的基板加热单元的高级回流装置等专用的回流装置。
根据本例,优选使得ZnAl焊料层3的厚度小于或等于50μm,更加优选小于或等于30μm,从而可形成非常薄的ZnAl焊料层3,其结果,具有能够降低ZnAl焊料层3的热传导的热阻的效果。
另外,根据本例,通过采用至少表面主要元素为Cu的基板2,从而具有下述作用:促进融解的ZnAl共晶焊料濡湿扩散,有助于缩短回流时间,同时减小所形成的ZnAl焊料层3的厚度。
另外,根据本例,由于使用形状比半导体元件1小的ZnAl共晶焊料片3’,施加静态载荷并使其熔融,因此能够使得包裹ZnAl焊料熔融液体的Zn或Al的自然氧化膜的外皮瞬间破碎,在短时间内再现性良好地发生熔融液体与基板2、熔融液体与半导体元件1的接合反应。另外,能够将制成的ZnAl焊料层3的厚度控制得较薄,并且厚度恒定。特别地,通过配置使得形状比半导体元件1小的ZnAl共晶焊料片3’不从半导体元件1的外周伸出,从而均匀地促进自然氧化膜外皮的粉碎,进一步提高上述效果。
另外,根据本例,通过一边对ZnAl共晶组成或大致共晶组成的ZnAl共晶焊料片3’施加载荷,一边升温使其融解,再进行降温,从而使得ZnAl共晶相组织向ZnAl共析相组织变化,ZnAl焊料层3变为ZnAl共晶相较少而Zn相及ZnAl共析相较多的组织。由此,能够抑制相界面上的应力差,其结果,能够抑制接合强度的波动,提高所得到的产品的成品率。
另外,根据本例,通过在刚好低于降温时的ZnAl焊料层的共析温度的温度下保持或逐渐冷却,从而可有效地将ZnAl焊料层3中含有的有害且热不稳定的ZnAl共晶相组织转换为ZnAl共析相组织和Zn相组织。
在本例中,通过使静态载荷大于或等于0.1g/mm2,优选大于或等于0.3g/mm2,从而能够使得ZnAl焊料层3的厚度更薄,使其小于或等于50μm,该厚度具有不易形成共晶相组织的性质。
标号的说明
1:碳化硅半导体装置
2:金属基板
3:ZnAl焊料层
11:欧姆接触部
12:安装电极
20:陶瓷板
21:金属板
22:金属膜
23:Cu类金属膜
3’:ZnAl焊料片
30:回流台
31:载荷
Claims (7)
1.一种半导体装置的制造方法,其中,包括下述工序:
分别准备半导体元件、至少表面的主要元素为Cu的基板、形状比所述半导体元件小的ZnAl共晶焊料片;
以各自的接合面彼此相对的方式配置所述半导体元件和所述基板,在该基板和半导体元件之间夹设所述ZnAl共晶焊料片;
一边对夹设在所述基板和所述半导体元件之间的所述ZnAl共晶焊料片施加载荷一边进行升温,使所述ZnAl共晶焊料片融解而形成ZnAl焊料层;以及
一边对所述ZnAl焊料层施加载荷一边进行降温。
2.根据权利要求1所述的半导体装置的制造方法,其中,
所述降温的工序,包含在刚好低于所述ZnAl焊料层的共析温度的温度下保温或逐渐冷却的工序。
3.根据权利要求1或2所述的半导体装置的制造方法,其中,
所述载荷大于或等于0.1g/mm2。
4.根据权利要求1至3中任一项所述的半导体装置的制造方法,其中,
所述ZnAl共晶焊料片的最大融解温度,大于或等于所述ZnAl共晶焊料片的液相线温度,且小于或等于420℃。
5.根据权利要求4所述的半导体装置的制造方法,其中,
保持为所述最大融解温度的时间小于或等于5分钟。
6.一种半导体装置,其在半导体元件和基板之间夹持有ZnAl焊料层,其中,
共晶相组织在所述ZnAl焊料层整体中所占的含有率小于或等于20%。
7.根据权利要求6所述的半导体装置,其中,
所述半导体元件,是以包含碳化硅(SiC)、氮化稼(GaN)、金刚石(C)在内的宽带隙半导体为基体的半导体元件。
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JP2011165508A JP5675525B2 (ja) | 2011-07-28 | 2011-07-28 | 半導体装置の製造方法及び半導体装置 |
PCT/JP2012/069096 WO2013015402A1 (ja) | 2011-07-28 | 2012-07-27 | 半導体装置の製造方法及び半導体装置 |
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JPS6316628A (ja) * | 1986-07-08 | 1988-01-23 | Mitsubishi Electric Corp | 半導体装置 |
JP2001093916A (ja) * | 1999-09-24 | 2001-04-06 | Toshiba Corp | 半導体装置及びその製造方法 |
US20020089828A1 (en) * | 2000-10-31 | 2002-07-11 | Seikou Suzuki | Semiconductor power element heat dissipation board, and conductor plate therefor and heat sink material and solder material |
CN101027422A (zh) * | 2004-09-28 | 2007-08-29 | 新日本制铁株式会社 | 具有发丝纹外观的高耐蚀性镀Zn系合金的钢材 |
US20100193801A1 (en) * | 2007-11-20 | 2010-08-05 | Toyota Jidosha Kabushiki Kaisha | Solder material, method for manufacturing the same, joined body, method for manufacturing the same, power semiconductor module, and method for manufacturing the same |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS6316628A (ja) * | 1986-07-08 | 1988-01-23 | Mitsubishi Electric Corp | 半導体装置 |
JP2001093916A (ja) * | 1999-09-24 | 2001-04-06 | Toshiba Corp | 半導体装置及びその製造方法 |
US20020089828A1 (en) * | 2000-10-31 | 2002-07-11 | Seikou Suzuki | Semiconductor power element heat dissipation board, and conductor plate therefor and heat sink material and solder material |
CN101027422A (zh) * | 2004-09-28 | 2007-08-29 | 新日本制铁株式会社 | 具有发丝纹外观的高耐蚀性镀Zn系合金的钢材 |
US20100193801A1 (en) * | 2007-11-20 | 2010-08-05 | Toyota Jidosha Kabushiki Kaisha | Solder material, method for manufacturing the same, joined body, method for manufacturing the same, power semiconductor module, and method for manufacturing the same |
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WO2013015402A1 (ja) | 2013-01-31 |
EP2738794B1 (en) | 2018-09-12 |
EP2738794A1 (en) | 2014-06-04 |
JP5675525B2 (ja) | 2015-02-25 |
JP2013030607A (ja) | 2013-02-07 |
US20140191250A1 (en) | 2014-07-10 |
US8975182B2 (en) | 2015-03-10 |
EP2738794A4 (en) | 2015-11-04 |
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