CN103700733B - 太阳能电池的n型晶体硅衬底的清洗处理方法 - Google Patents
太阳能电池的n型晶体硅衬底的清洗处理方法 Download PDFInfo
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- CN103700733B CN103700733B CN201410019509.0A CN201410019509A CN103700733B CN 103700733 B CN103700733 B CN 103700733B CN 201410019509 A CN201410019509 A CN 201410019509A CN 103700733 B CN103700733 B CN 103700733B
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- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 46
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 58
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 49
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000008367 deionised water Substances 0.000 claims abstract description 34
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 34
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 32
- 235000008216 herbs Nutrition 0.000 claims abstract description 17
- 239000011259 mixed solution Substances 0.000 claims abstract description 17
- 210000002268 wool Anatomy 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000001035 drying Methods 0.000 claims abstract description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000243 solution Substances 0.000 claims description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 230000036571 hydration Effects 0.000 claims description 6
- 238000006703 hydration reaction Methods 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000003749 cleanliness Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 238000004140 cleaning Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 101000580353 Rhea americana Rheacalcin-1 Proteins 0.000 description 3
- 101000580354 Rhea americana Rheacalcin-2 Proteins 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000000415 inactivating effect Effects 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 238000006396 nitration reaction Methods 0.000 description 2
- 239000012766 organic filler Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 238000006424 Flood reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 210000002189 macula lutea Anatomy 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
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Claims (4)
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CN201410019509.0A CN103700733B (zh) | 2014-01-16 | 2014-01-16 | 太阳能电池的n型晶体硅衬底的清洗处理方法 |
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CN201410019509.0A CN103700733B (zh) | 2014-01-16 | 2014-01-16 | 太阳能电池的n型晶体硅衬底的清洗处理方法 |
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CN103700733B true CN103700733B (zh) | 2015-10-21 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104465863A (zh) * | 2014-07-30 | 2015-03-25 | 上饶光电高科技有限公司 | 一种可提高光电转换效率的多晶硅片预处理方法 |
CN104299890A (zh) * | 2014-10-09 | 2015-01-21 | 浙江大学 | 一种硅片表面钨铁金属离子的清洗方法 |
CN105449045B (zh) * | 2015-12-29 | 2017-03-22 | 江西比太科技有限公司 | 一种适用于rie制绒后晶体硅片的表面微腐蚀清洗方法 |
CN105655445B (zh) * | 2016-03-25 | 2017-04-12 | 中节能太阳能科技(镇江)有限公司 | 一种rie制绒硅片表面修饰清洗方法 |
CN106319636B (zh) * | 2016-09-23 | 2018-11-09 | 西安黄河光伏科技股份有限公司 | 一种改善单晶硅太阳电池绒面的制备方法及制备工具 |
CN110137302A (zh) * | 2018-02-08 | 2019-08-16 | 国家电投集团科学技术研究院有限公司 | 硅异质结太阳电池晶硅衬底的清洗及制绒方法和硅异质结太阳电池 |
CN108987677A (zh) * | 2018-07-18 | 2018-12-11 | 大连理工大学 | 金刚线切割硅片废料回收用于锂离子电池负极材料制备的方法 |
CN109231215A (zh) * | 2018-10-31 | 2019-01-18 | 大连颐和顺新材料科技有限公司 | 一种用金刚线切割硅片废硅粉制备多孔硅的方法 |
CN110993724A (zh) * | 2019-10-17 | 2020-04-10 | 晋能清洁能源科技股份公司 | 一种异质结太阳能电池的制绒清洗方法 |
CN111192936A (zh) * | 2019-12-28 | 2020-05-22 | 江苏润阳悦达光伏科技有限公司 | 一种不合格成品电池片的还原工艺 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102560498A (zh) * | 2012-01-05 | 2012-07-11 | 天长吉阳新能源有限公司 | 一种晶体硅太阳电池去磷硅清洗液及清洗方法 |
CN103480598A (zh) * | 2012-06-15 | 2014-01-01 | 无锡尚德太阳能电力有限公司 | 一种用于制备高效太阳电池的硅片清洗方法及清洗设备 |
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KR100386954B1 (ko) * | 2000-11-17 | 2003-06-09 | 주영창 | 유리와 실리콘 기판의 저온 직접접합방법 |
KR100386688B1 (ko) * | 2000-12-22 | 2003-06-02 | 주식회사 실트론 | 단결정 실리콘 웨이퍼 검사 방법 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102560498A (zh) * | 2012-01-05 | 2012-07-11 | 天长吉阳新能源有限公司 | 一种晶体硅太阳电池去磷硅清洗液及清洗方法 |
CN103480598A (zh) * | 2012-06-15 | 2014-01-01 | 无锡尚德太阳能电力有限公司 | 一种用于制备高效太阳电池的硅片清洗方法及清洗设备 |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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Effective date of registration: 20240515 Address after: No. 169 Shenzhen East Road, Huai'an Economic and Technological Development Zone, Jiangsu Province, 223010 Patentee after: Tianhe Solar (Huai'an) Optoelectronics Co.,Ltd. Country or region after: China Address before: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee before: TRINASOLAR Co.,Ltd. Country or region before: China |