CN103681984B - 发光装置的密封构件的拆卸方法及能将密封构件拆卸的发光装置 - Google Patents
发光装置的密封构件的拆卸方法及能将密封构件拆卸的发光装置 Download PDFInfo
- Publication number
- CN103681984B CN103681984B CN201310449618.1A CN201310449618A CN103681984B CN 103681984 B CN103681984 B CN 103681984B CN 201310449618 A CN201310449618 A CN 201310449618A CN 103681984 B CN103681984 B CN 103681984B
- Authority
- CN
- China
- Prior art keywords
- sealing member
- light emitting
- emitting device
- substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000007789 sealing Methods 0.000 title claims description 119
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 229910000679 solder Inorganic materials 0.000 claims description 101
- 239000000463 material Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 230000008018 melting Effects 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 14
- 229920002050 silicone resin Polymers 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 239000011810 insulating material Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 3
- 239000010949 copper Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 2
- 229910020888 Sn-Cu Inorganic materials 0.000 description 2
- 229910019204 Sn—Cu Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 235000000396 iron Nutrition 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920006375 polyphtalamide Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/7999—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto for disconnecting
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012210906A JP6131555B2 (ja) | 2012-09-25 | 2012-09-25 | 発光装置の封止部材の取り外し方法および封止部材を取り外すことが可能な発光装置 |
| JP2012-210906 | 2012-09-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103681984A CN103681984A (zh) | 2014-03-26 |
| CN103681984B true CN103681984B (zh) | 2018-01-26 |
Family
ID=50318892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310449618.1A Active CN103681984B (zh) | 2012-09-25 | 2013-09-24 | 发光装置的密封构件的拆卸方法及能将密封构件拆卸的发光装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6131555B2 (enrdf_load_stackoverflow) |
| CN (1) | CN103681984B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379913A (zh) * | 2019-08-16 | 2019-10-25 | 惠州雷曼光电科技有限公司 | Led芯片的维修方法及维修装置 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6640872B2 (ja) * | 2015-12-01 | 2020-02-05 | シャープ株式会社 | 画像形成素子 |
| JP6728676B2 (ja) * | 2015-12-26 | 2020-07-22 | 日亜化学工業株式会社 | 発光装置 |
| KR20190019745A (ko) | 2017-08-18 | 2019-02-27 | 주식회사 루멘스 | 발광소자 및 그 제조방법 |
| JP7148780B2 (ja) * | 2017-09-29 | 2022-10-06 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
| JPWO2019188063A1 (ja) * | 2018-03-27 | 2021-04-22 | ソニーセミコンダクタソリューションズ株式会社 | 素子組立体及び素子・実装用基板組立体 |
| US10964852B2 (en) * | 2018-04-24 | 2021-03-30 | Samsung Electronics Co., Ltd. | LED module and LED lamp including the same |
| CN108772611A (zh) * | 2018-05-24 | 2018-11-09 | 武汉锐科光纤激光技术股份有限公司 | 电子元器件拆除方法及装置 |
| CN111716006B (zh) * | 2020-06-17 | 2022-03-25 | 昂纳信息技术（深圳）有限公司 | 一种激光拆解光学元件的方法及系统 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442040A (zh) * | 2007-11-20 | 2009-05-27 | 奇力光电科技股份有限公司 | 发光二极管封装结构及其制造方法 |
| CN102683558A (zh) * | 2011-03-16 | 2012-09-19 | 株式会社东芝 | 半导体发光装置的晶片和用于制造半导体发光装置的方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0428269A (ja) * | 1990-05-23 | 1992-01-30 | Fujikura Ltd | Ｌｅｄベアチップの実装構造 |
| JP2011159832A (ja) * | 2010-02-01 | 2011-08-18 | Yamaguchi Univ | 半導体発光装置 |
-
2012
- 2012-09-25 JP JP2012210906A patent/JP6131555B2/ja active Active
-
2013
- 2013-09-24 CN CN201310449618.1A patent/CN103681984B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442040A (zh) * | 2007-11-20 | 2009-05-27 | 奇力光电科技股份有限公司 | 发光二极管封装结构及其制造方法 |
| CN102683558A (zh) * | 2011-03-16 | 2012-09-19 | 株式会社东芝 | 半导体发光装置的晶片和用于制造半导体发光装置的方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379913A (zh) * | 2019-08-16 | 2019-10-25 | 惠州雷曼光电科技有限公司 | Led芯片的维修方法及维修装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6131555B2 (ja) | 2017-05-24 |
| JP2014067805A (ja) | 2014-04-17 |
| CN103681984A (zh) | 2014-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103681984B (zh) | 发光装置的密封构件的拆卸方法及能将密封构件拆卸的发光装置 | |
| JP5842813B2 (ja) | 発光装置および発光装置の製造方法 | |
| US8581291B2 (en) | Semiconductor device and method for manufacturing the same | |
| JP6008940B2 (ja) | 半導体発光装置及びその製造方法 | |
| US9755121B2 (en) | Method of detaching sealing member of light emitting device | |
| CN101997074A (zh) | 一种基于硅基板的led表面贴片式封装结构及其封装方法 | |
| JP2011233552A (ja) | 半導体発光装置及びその製造方法 | |
| CN103915427B (zh) | 发光装置及其制造方法 | |
| JP6582827B2 (ja) | 基板及び発光装置、並びに発光装置の製造方法 | |
| JP2012080026A (ja) | Ｌｅｄパッケージ | |
| US20180182917A1 (en) | Light emitting device and method for manufacturing the same | |
| CN106663732A (zh) | 倒装芯片led封装 | |
| US20220328461A1 (en) | Substrate structure, light-emitting device, and manufacturing method of substrate structure | |
| JP2016184714A (ja) | 発光装置の製造方法 | |
| US9368675B2 (en) | Method of manufacturing light-emitting device and wiring substrate for light-emitting element | |
| JP5703663B2 (ja) | 発光装置および発光装置の製造方法 | |
| US9564565B2 (en) | Light emitting device, light emitting module, and method for manufacturing light emitting device | |
| JP5880025B2 (ja) | 発光装置 | |
| CN114678456A (zh) | 发光模块及发光模块的制造方法 | |
| JP5509623B2 (ja) | 発光装置 | |
| JP6210211B2 (ja) | 発光装置の製造方法 | |
| CN115483331A (zh) | 发光装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |