CN103681611A - 钝化后互连件结构及其形成方法 - Google Patents
钝化后互连件结构及其形成方法 Download PDFInfo
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- CN103681611A CN103681611A CN201210559178.0A CN201210559178A CN103681611A CN 103681611 A CN103681611 A CN 103681611A CN 201210559178 A CN201210559178 A CN 201210559178A CN 103681611 A CN103681611 A CN 103681611A
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- ppi
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- metal pad
- passivation
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Abstract
本发明公开了钝化后互连件结构及其形成方法。器件包括金属焊盘、与金属焊盘的边缘部分重叠的钝化层、以及位于钝化层上方的第一聚合物层。钝化后互连件(PPI)具有覆盖第一聚合物层的水平部分和具有连接到水平部分的顶部的插头部分。插头部分延伸到第一聚合物层的内部。插头部分的底面与介电材料相接触。第二聚合物层覆盖第一聚合物层。
Description
技术领域
本发明涉及半导体领域,更具体地,涉及钝化后互连件结构及其形成方法。
背景技术
在晶圆级芯片尺寸封装(WLCSP)的形成过程中,先在晶圆中的半导体衬底的表面上形成晶体管这样的集成电路器件。然后在集成电路器件的上方形成互连件结构。金属焊盘形成在且电连接至互连件结构。钝化层和第一聚合物层形成在金属焊盘上,同时,通过钝化层和第一聚合物层中的开口露出金属焊盘。
然后形成钝化后互连件(PPI),接着,在PPI的上方形成第二聚合物层。形成的凸块下金属化层(UBM)延伸至第二聚合物层的开口中,其中,UBM电连接至PPI。然后焊料球放置在UBM的上方且进行回流焊。
发明内容
为解决上述问题,本发明提供了一种器件,包括:金属焊盘;钝化层,与金属焊盘的边缘部分重叠;第一聚合物层,位于钝化层的上方;钝化后互连件(PPI),包括:水平部分,覆盖第一聚合物层;和插头部分,包括连接至水平部分的顶部,插头部分延伸进第一聚合物层,插头部分的底面与介电材料相接触;以及第二聚合物层,覆盖第一聚合物层。
其中,插头部分的底面与钝化层的顶面相接触。
该器件进一步包括:凸块下金属化层(UBM),延伸进第二聚合物层以电连接至PPI;以及电连接件,位于UBM的上方。
其中,插头部分不与UBM对准。
其中,PPI不具有与UBM重叠的插头部分。
该器件进一步包括:延伸进第一聚合物层且连接至PPI的水平部分的多个插头部分,多个插头部分的底面与钝化层的顶面相接触。
其中,PPI包括铜,并且钝化层包括:氧化物层;以及氮化物层。
其中,PPI进一步包括将水平部分电连接至金属焊盘的第三部分。
此外,还提供了一种器件,包括:金属焊盘;钝化层,与金属焊盘的边缘部分重叠;第一聚合物层,覆盖钝化层;钝化后互连件(PPI),包括:水平部分,覆盖第一聚合物层;多个插头部分,位于水平部分的下方且延伸进第一聚合物层,插头部分的底面与钝化层相接触;和第三部分,将水平部分电连接至金属焊盘;第二聚合物层,位于第一聚合物层的上方;凸块下金属化层(UBM),延伸进第二聚合物层以电连接至PPI;以及连接件,位于UBM的上方且通过PPI电连接至金属焊盘。
其中,多个插头部分的底面与钝化层的顶面相接触。
其中,多个插头部分与UBM不对准,并且PPI不具有与UBM重叠的插头部分。
其中,PPI包括铜,并且钝化层包括:氧化物层;以及氮化物层。
该器件进一步包括:半导体衬底;以及集成电路,形成在半导体衬底中和半导体衬底上,其中,金属焊盘电连接至集成电路。
此外,还提供了一种器件,包括:金属焊盘;钝化层,包括与金属焊盘的边缘部分重叠的部分;第一聚合物层,位于金属焊盘的上方;
钝化后互连件(PPI),包括:第一部分,覆盖第一聚合物层;和第二部分,位于第一部分的下方且将第一部分电连接至金属焊盘;以及第二聚合物层,包括:水平部分,位于PPI的上方;和聚合物插头部分(聚合物插头),延伸进PPI且被PPI环绕。
其中,聚合物插头部分的底面与第一聚合物层的顶面相接触。
该器件进一步包括:凸块下金属化层(UBM),延伸进第二聚合物层以电连接至PPI;以及电连接件,覆盖UBM。
其中,聚合物插头与UBM不对准。
其中,第二聚合物层不具有与UBM重叠的聚合物插头部分。
该器件进一步包括:延伸进PPI的多个聚合物插头部分,多个聚合物插头部分的每一个都是第二聚合物层的一部分且被PPI环绕,并且多个聚合物插头部分的底面与第一聚合物层的顶面相接触。
该器件进一步包括:半导体衬底;以及集成电路,形成在半导体衬底中和半导体衬底上,其中,金属焊盘电连接至集成电路。
附图说明
为了更全面地理解实施例及其优势,现将结合附图所进行的描述作为参考,其中:
图1-图4A示出了根据一些示例性实施例的制造包含钝化后互连件结构的晶圆的中间阶段的截面图;
图4B示出了图4A所示结构的顶视图;
图5-图7A示出了根据可选实施例的制造包含钝化后互连件结构的晶圆的中间阶段的截面图;以及
图7B示出了图7A所示结构的顶视图。
具体实施方式
下面,详细讨论本发明各实施例的制造和使用。然而,应该理解,这些实施例提供了许多可以在各种具体环境中实现的可应用的概念。所讨论的具体实施例仅仅示出了制造和使用本发明的具体方式,而不用于限制本发明的范围。
根据实施例提供包含钝化后互连件(PPI)结构的晶圆及其形成方法。示出了制造各种实施例的中间阶段。然后讨论了实施例的变化。在各种图和示出的实施例中,相同的参考数字用于表示相同的元件。
参见图1,提供了包括半导体衬底20的晶圆100。半导体衬底20可以是块体硅衬底或绝缘体上硅衬底。或者,也可以使用包括族III、IV和V元素的其他半导体材料,其可以包括硅锗、碳化硅和III-V化合物半导体材料。在半导体衬底20中和/或上形成诸如晶体管(如图所示21)的集成电路器件。晶圆100可以进一步包括半导体衬底20上方的层间电介质(ILD)22和ILD 22上方的互连件结构24。互连件结构24包括均形成在介电层25中的金属线26和通孔28。以下将在同一平面上的金属线的组合称之为金属层。因此,互连件结构24可以包括通过通孔28互连的多个金属层。金属线26和通孔28可以由铜或铜合金形成,当然,也可以由其他金属形成。在一些实施例中,介电层25由低k介电材料形成。例如,低k介电材料的介电常数(k值)可以小于大约3.0,或小于大约2.5。
金属焊盘30形成在互连件结构24的上方,且可以通过金属线26和通孔28电连接至集成电路器件21,其中,示出的线29代表电连接。金属焊盘30可以是铝焊盘或铝铜焊盘,因此,下文可以称其为铝焊盘30,当然也可以使用其他金属材料。钝化层32形成在互连件结构24的上方。钝化层32的一部分可以覆盖铝焊盘30的边缘部分,而通过钝化层32的开口露出铝焊盘30的中心部分。钝化层32可以是单层或复合层,也可以由无孔材料形成。在一些实施例中,钝化层32是包含氧化硅层(未示出)和氮化硅层(未示出)的复合层。钝化层32也可以由其他无孔介电材料形成,如非掺杂硅玻璃(USG)、氮氧化硅、和/或其他材料。
参见图2,聚合物层36形成在钝化层32的上方。聚合物层36可以包括诸如环氧树脂、聚酰亚胺、苯并环丁烯(BCB)、聚苯并恶唑(PBO)、的聚合物等。例如,形成方法可以包括旋涂。聚合物层36可以以液态形式分布然后被固化。
图案化聚合物层36,以形成开口38和40。开口40与金属焊盘30对准,其中,通过开口40露出金属焊盘30。开口38不与金属焊盘和与金属焊盘30同时形成的金属线(如果有)对准。因此,通过开口38露出钝化层32。在聚合物层36由光敏材料形成的实施例中,通过光刻掩膜(未示出)曝光以图案化聚合物层36。然后显影露出的聚合物层36以形成开口38和40。
图3示出了PPI 44的形成,其中,先形成钝化层32,再形成PPI 44,这样的过程被称为PPI 44的形成。在一些实施例中,PPI 44的形成包括沉积晶种层41,在晶种层41的上方形成并图案化掩膜46,然后在晶种层41的上方形成金属层42。晶种层41可以是使用物理气相沉积(PVD)沉积的铜层。金属层42可以由纯铜、基本纯的铜或铜合金形成,也可以通过电镀形成。掩膜层46可以是干膜或光刻胶。金属层42形成之后,去除掩膜层46。然后在蚀刻步骤中,去除晶种层41的部分,即,与掩膜层46重叠的部分。
PPI 44包括覆盖聚合物层36的部分44A(下文也之称为水平部分),和作为通孔的部分44B(下文也称之为插头部分),以电连接至金属焊盘30。此外,PPI 44进一步包括部分44C,该部分44C形成在开口38中(如图2所示)并延伸至聚合物层36内。部分44C的底面44C’与钝化层32的顶面32’相接触。此外,底面44C’不与任何导电部件接触,如钝化层32中的金属焊盘和金属线。通过整个描述,部分44C被称为PPI插头。PPI插头44C和覆盖部分44A在同一个步骤中由相同材料形成。因此,在PPI插头44C和覆盖部分44A之间无可视界面。
图4A示出了聚合物层48和凸块下金属化层(UBM)50的形成和图案化。聚合物层48可以包括聚酰亚胺或其他聚合物基材料(如PBO、BCB、环氧树脂、或其他材料)。在一些实施例中,通过使用旋涂,形成聚合物层48。
接着,形成UBM层50。在一些实施例中,UBM层50包括阻挡层和阻挡层上方的晶种层(未示出)。UBM层50延伸至聚合物层48的开口中,以及电连接至并且可以物理接触于PPI 44。阻挡层可以是钛层、氮化钛层、钽层、氮化钽层、或由钛合金或钽合金形成的层。晶种层的材料可以包括铜或铜合金。在一些实施例中,使用PVD或其他可用方法形成UBM层50。
进一步参见图4A,形成连接件52。在一些实施例中,连接件52是金属区,其可以是位于UBM层50上的金属球(如,焊料球或铜球),或者也可以是通过电镀形成在UBM层50上的金属柱。然后,对金属区进行回流焊工艺,并形成金属球52。在可选的实施例中,连接件52包括金属柱(可以是铜柱)。在金属柱上也可以形成附加层,如镍层、焊料盖顶、钯层、和其他层。
PPI部分44A包括与UBM层50和连接件52重叠的部分44D和与UBM50和连接件52不重叠的部分44E。在一些实施例中,PPI插头44C形成在部分44E的下方,而在部分44D的下方,没有形成PPI插头。在可选的实施例中,PPI插头44C形成在部分44D和44E 的下方。
图4B示出了图4D所示结构的顶视图,其中,根据示例性实施例,示意性示出了PPI 44、连接件52和金属焊盘30。PPI插头44C可以被布置成阵列或其他可用布局,如蜂窝状布局。PPI插头44C的顶视图形状可以是条形、正方形、圆形、六边形、八角形、或其他形状。在一些实施例中,PPI插头44C和PPI 44的最近边缘44F之间的间距为S1,间隔S1大于大约5μm,或大于大约10μm。相邻PPI插头44C之间的间隔S2可以大于大约5μm或大于大约10μm。PPI插头44C的横向尺寸(如长度L1和宽度W1)的范围介于大约2μm和大约40μm之间,或大约5μm和大约20μm之间。然而,应该理解,在整个描述中,该值仅仅为实例,并且可以变成不同值。
在相同芯片或相同晶圆中,一些PPI(如PPI 44)可以包括PPI插头,而其他PPI(如144)可以不包括PPI插头。在一些实施例中,PPI的局部图像密度决定了是否形成PPI的PPI插头。局部图像密度是由局部芯片区54中所有PPI的总顶视图面积除以局部芯片区54的顶视图面积而得出的。例如,局部芯片区54的长度L2和宽度W2可以等于或大于大约125μm,当然也可以规定为其他不同尺寸以确定局部区的尺寸。例如,长度L2和宽度W2的值范围可以介于大约50μm和大约500μm之间。例如,当局部图像密度大于预定阈值图像密度大约60%时,需要在相应局部芯片区中的PPI中形成PPI插头44C。否则,如果PPI的局部图像密度小于预定阈值图像密度时,可以形成或不形成PPI插头作为相应局部芯片区中PPI的部分。例如,参见图4,局部芯片区54中的PPI的图像密度低,因此,在局部芯片区54中没有形成PPI插头。
下面的方程式1指定形成PPI插头的条件为:
APPI/Alocal>Pth [方程式1]
其中,APPI是局部芯片区54中PPI的总面积,Alocal是局部芯片区54的总芯片面积,Pth是局部芯片区54中PPI的预定阈值图像密度。根据设计规则,确定局部芯片区54的最小尺寸和预定阈值图像密度。
当在相应局部芯片区54中形成PPI插头44C时,下列关系也可成立:
(APPI-Aplug)/Alocal<=Pth [方程式2]
其中,Aplug是相应局部芯片区54中所有PPI插头44C的总面积。方程式2表明,选择PPI插头44C的总顶视图面积,以抵消局部芯片区中PPI的过度高的图像密度。因此,PPI的图像密度越高,形成的PPI插头44C就越多(和/或越大)。
图5-图7A示出了根据可选实施例的形成钝化后结构的中间阶段的截面图。除非另有说明,这些实施例中的部件的材料和形成方法与其他相同部件的材料和形成方法基本相同,因此,可以用图1-图4B所示实施例中的相同参考数字来表示。所以,在图1-图4B所示实施例的讨论中可以找到有关图5-图7B所示部件的形成工艺、材料和值的详细内容。
参见图5,形成初始结构。除了在聚合物层36中未形成PPI插头44C,而是在PPI 44中形成开口56之外,该结构与图3所示的结构相似。除了掩膜层46也包括附加部分46’以确定开口56的尺寸和位置之外,PPI 44的形成与图3所示的实施例相似。然后,如图6所示,形成聚合物层48。聚合物层48包括延伸到开口56(图5)中的部分48A(或者下文称之为插头部分)。聚合物层48的部分48A被称为聚合物插头48A。聚合物插头48A和聚合物层48的覆盖部分(或者被称为水平部分)在同一步骤中由相同材料形成。因此,在聚合物插头48A和覆盖部分之间没有可视界面。然后,参见图7A,形成UBM 50和连接件52。
图7B示出了图4D所示结构的顶视图,其中,根据示例性实施例示出PPI 44、连接件52、和金属焊盘30。聚合物插头48A可以被布置成阵列或其他可用布局,如蜂窝状布局。聚合物插头48A的顶视图形状可以是条形、正方形、圆形、六边形、八角形、或其他形状。在一些实施例中,聚合物插头48A和PPI 44的最近边缘44F之间的间距为S1,间隔S1可以大于大约5μm,或大于大约10μm。相邻聚合物插头48A之间的间隔S2可以大于大约5μm或大于大约10μm。聚合物插头48A的横向尺寸(如长度L1和宽度W1)的范围可以介于大约2μm和大约40μm之间,或大约5μm和大约20μm之间。
和PPI插头44C的形成相似,PPI的局部图像密度决定是否在PPI中形成聚合物插头48A。例如,当局部芯片区54中的PPI的局部图像密度大于预定阈值图像密度时,在局部芯片区54中的PPI中形成开口56(如图6所示),以降低局部图像密度至预定阈值图像密度以下。否则,如果局部芯片区中的PPI的局部图像密度小于预定阈值图像密度,则在相应部分芯片区中的PPI中可以形成或不形成聚合物插头。
在实施例中,使用PPI插头和/或聚合物插头来减少PPI 44(图4A-图7A所示)和聚合物层36和48之间的分层(delamination)。因为PPI 44的热膨胀系数(CTE)和聚合物层36和48的CTE之间存在明显的不匹配,所以在可靠性测试(包括在大约-40℃和125℃之间进行多次热循环)后,会出现分层。但是,在一些实施例中,通过形成PPI插头和/或聚合物插头来减少分层。
根据实施例,一种器件包括金属焊盘、与金属焊盘的边缘部分重叠的钝化层和钝化层上方的第一聚合物层。钝化后互连件(PPI)具有覆盖第一聚合物层的水平部分和具有与水平部分相连的顶部的插头部分。插头部分延伸到第一聚合物层的内部。插头部分的底面与介电材料相接触。第二聚合物层覆盖第一聚合物层。
根据其他实施例,一种器件包括金属焊盘、与金属焊盘的边缘部分重叠的钝化层和覆盖钝化层的第一聚合物层。PPI包括覆盖第一聚合物层的水平部分、第一部分下面且延伸到第一聚合物层内部的多个插头部分,其中,插头部分的底面与钝化层和将水平部分电连接至金属焊盘的第三部分相接触。第二聚合物层位于第一聚合物层的上方。UBM延伸至第二聚合物层的内部,以电连接至PPI。含焊料的连接件位于UBM的上方且通过PPI电连接至金属焊盘。插头部分在垂直方向上不与UBM对准。
根据其他实施例,一种器件包括金属焊盘、具有与金属焊盘的边缘部分重叠的部分的钝化层,以及在金属焊盘上方的第一聚合物层。PPI包括覆盖第一聚合物层的第一部分和位于第一部分下面且将第一部分电连接至金属焊盘的第二部分。第二聚合物层包括PPI上方的水平部分和延伸至PPI的内部且由PPI环绕的插头部分。聚合物插头的底面可以与第一聚合物层的顶面相接触。
尽管已经详细地描述了本发明及其优势,但应该理解,可以在不背离所附权利要求限定的本发明主旨和范围的情况下,做各种不同的改变,替换和更改。而且,本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员应理解,通过本发明,现有的或今后开发的用于执行与根据本发明所采用的所述相应实施例基本相同的功能或获得基本相同结构的工艺、机器、制造、材料组分、装置、方法或步骤本届本发明可以被使用。因此,所附权利要求应该包括在这样的工艺、机器、制造、材料组分、装置、方法或步骤的范围内。此外,每条权利要求构成单独的实施例,并且多个权利要求和实施例的组合在本发明的范围内。
Claims (10)
1.一种器件,包括:
金属焊盘;
钝化层,与所述金属焊盘的边缘部分重叠;
第一聚合物层,位于所述钝化层的上方;
钝化后互连件(PPI),包括:
水平部分,覆盖所述第一聚合物层;和
插头部分,包括连接至所述水平部分的顶部,所述插头部分延伸进所述第一聚合物层,所述插头部分的底面与介电材料相接触;以及第二聚合物层,覆盖所述第一聚合物层。
2.根据权利要求1所述的器件,其中,所述插头部分的底面与所述钝化层的顶面相接触。
3.根据权利要求1所述的器件,进一步包括:
凸块下金属化层(UBM),延伸进所述第二聚合物层以电连接至所述PPI;以及
电连接件,位于所述UBM的上方。
4.根据权利要求3所述的器件,其中,所述插头部分不与所述UBM对准。
5.根据权利要求3所述的器件,其中,所述PPI不具有与所述UBM重叠的插头部分。
6.根据权利要求1所述的器件,进一步包括:延伸进所述第一聚合物层且连接至所述PPI的所述水平部分的多个插头部分,所述多个插头部分的底面与所述钝化层的顶面相接触。
7.根据权利要求1所述的器件,其中,所述PPI包括铜,并且所述钝化层包括:
氧化物层;以及
氮化物层。
8.根据权利要求1所述的器件,其中,所述PPI进一步包括将所述水平部分电连接至所述金属焊盘的第三部分。
9.一种器件,包括:
金属焊盘;
钝化层,与所述金属焊盘的边缘部分重叠;
第一聚合物层,覆盖所述钝化层;
钝化后互连件(PPI),包括:
水平部分,覆盖所述第一聚合物层;
多个插头部分,位于所述水平部分的下方且延伸进所述第一聚合物层,所述插头部分的底面与所述钝化层相接触;和
第三部分,将所述水平部分电连接至所述金属焊盘;
第二聚合物层,位于所述第一聚合物层的上方;
凸块下金属化层(UBM),延伸进所述第二聚合物层以电连接至所述PPI;以及
连接件,位于所述UBM的上方且通过所述PPI电连接至所述金属焊盘。
10.一种器件,包括:
金属焊盘;
钝化层,包括与所述金属焊盘的边缘部分重叠的部分;
第一聚合物层,位于所述金属焊盘的上方;
钝化后互连件(PPI),包括:
第一部分,覆盖所述第一聚合物层;和
第二部分,位于所述第一部分的下方且将所述第一部分电连接至所述金属焊盘;以及
第二聚合物层,包括:
水平部分,位于所述PPI的上方;和
聚合物插头部分(聚合物插头),延伸进所述PPI且被所述PPI环绕。
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US20140077356A1 (en) | 2014-03-20 |
US8952530B2 (en) | 2015-02-10 |
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US20150130057A1 (en) | 2015-05-14 |
US9553066B2 (en) | 2017-01-24 |
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