CN103668108A - Atomic layer deposition method of oxide medium - Google Patents
Atomic layer deposition method of oxide medium Download PDFInfo
- Publication number
- CN103668108A CN103668108A CN201310667554.2A CN201310667554A CN103668108A CN 103668108 A CN103668108 A CN 103668108A CN 201310667554 A CN201310667554 A CN 201310667554A CN 103668108 A CN103668108 A CN 103668108A
- Authority
- CN
- China
- Prior art keywords
- atomic layer
- layer deposition
- medium
- pure nitrogen
- high pure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 96
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 60
- 238000006243 chemical reaction Methods 0.000 claims abstract description 39
- 239000002243 precursor Substances 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 18
- 238000011065 in-situ storage Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000006227 byproduct Substances 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000002000 scavenging effect Effects 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- VLYNEXSJZWRPQG-UHFFFAOYSA-N CCN([Hf])CC Chemical compound CCN([Hf])CC VLYNEXSJZWRPQG-UHFFFAOYSA-N 0.000 claims description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 3
- IUBCUJZHRZSKDG-UHFFFAOYSA-N C(C)N(C)[Hf] Chemical compound C(C)N(C)[Hf] IUBCUJZHRZSKDG-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical group CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- VBGLTZSZGRGWDQ-UHFFFAOYSA-N hafnium;2-methylpropan-2-ol Chemical compound [Hf].CC(C)(C)O VBGLTZSZGRGWDQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- LGRLWUINFJPLSH-UHFFFAOYSA-N methanide Chemical compound [CH3-] LGRLWUINFJPLSH-UHFFFAOYSA-N 0.000 claims description 3
- 235000013842 nitrous oxide Nutrition 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 abstract 3
- 238000011010 flushing procedure Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003335 steric effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention discloses an atomic layer deposition method of an oxide medium, which utilizes an atomic layer deposition system to prepare the oxide medium and comprises the following steps: step 1: setting growth parameters of an atomic layer deposition system; step 2: introducing a metal precursor source pulse into a reaction cavity of the atomic layer deposition system, then cleaning with high-purity nitrogen, and flushing reaction byproducts and residual metal precursor source; and step 3: introducing water pulse into a reaction cavity of the atomic layer deposition system, and then cleaning with high-purity nitrogen to flush reaction byproducts and residual water; and 4, step 4: introducing in-situ treatment gas pulse into a reaction cavity of the atomic layer deposition system, and then cleaning by using high-purity nitrogen to flush reaction byproducts and residual in-situ treatment gas; and 5: and sequentially repeating the step (2), the step (3) and the step (4) to obtain the oxide dielectric film with high dielectric constant. The atomic layer deposition method of the oxide medium can be applied to the growth of the gate medium in the CMOS technology.
Description
Technical field
The present invention relates to the preparation method of oxide dielectric, relate in particular to a kind of Atomic layer deposition method of medium of oxides, belong to semi-conductor integrated technology field.
Background technology
Semiconductor technology, as core and the basis of information industry, is the important symbol of weighing a national science technical progress and overall national strength.In in the past more than 40 year, silica-based integrated technology is followed Moore's Law and is improved working speed, the increase integrated level of device and reduced costs by the characteristic dimension of reduction of device, and the characteristic dimension of silicon base CMOS device narrows down to nanoscale by micro-meter scale.Yet when the grid length of MOS device narrows down to below 90 nanometers, traditional silicon base CMOS integrated technology starts to face the double challenge from physics and technical elements.Silicon-dioxide can not meet current semiconducter device to dielectric requirement, and high dielectric constant oxide has obtained increasing application in CMOS integrated technology as gate dielectric material.
Adopting high mobility channel material to substitute traditional silicon material will be the important development direction of semi-conductor integrated technology in " rear mole of epoch ", wherein germanium and III-V group iii v compound semiconductor material are most possibly realized large-scale application, and the high dielectric constant oxide that searching is applicable to germanium and III-V group iii v compound semiconductor material also becomes in the recent period study hotspot both at home and abroad.
The method of ald has that homogeneity is high, surface coverage good, from the accurate advantage such as controlled of limiting surface absorption reaction and the speed of growth, be applied in the process of growth of current C MOS technology gate medium.Method based on ald, the deposition method of the medium of oxides of exploitation high-performance high-k has important application prospect.
Summary of the invention
(1) technical problem that will solve
Main purpose of the present invention is to provide a kind of Atomic layer deposition method of medium of oxides, to optimize the growth conditions of ald of the medium of oxides of high-k.
(2) technical scheme
For achieving the above object, the invention provides a kind of Atomic layer deposition method of medium of oxides, the method is to utilize atomic layer deposition system to carry out the preparation of medium of oxides, comprising:
Step 1: set atomic layer deposition system growth parameter(s);
Step 2: pass into the pulse of metal precursor source in atomic layer deposition system reaction cavity, and then clean with high pure nitrogen, wash out byproduct of reaction and residual metal precursor source;
Step 3: pass into Aquapulse in atomic layer deposition system reaction cavity, and then clean with high pure nitrogen, wash out byproduct of reaction and residual water;
Step 4: pass into in-situ treatment gas pulses in atomic layer deposition system reaction cavity, and then clean with high pure nitrogen, wash out byproduct of reaction and residual in-situ treatment gas;
Step 5: repeat successively step 2, step 3 and step 4, obtain the medium of oxides film of high-k.
In such scheme, in described step 1, the reaction chamber temperature of described atomic layer deposition system is 20 degrees Celsius-500 degrees Celsius, and reaction chamber pressure is 0.5 millibar-10 millibars.
In such scheme, in described step 2, described metal precursor source is trimethyl aluminium (Al (CH
3)
3), four (ethylmethylamino) hafnium (Hf[N (CH
3) (C
2h
5)]
4), four (diethylamino) hafnium (Hf[N (CH
3)
2]
4), four (diethylamino) hafnium (Hf[N (C
2h
5)
2]
4), four trimethyl carbinol hafnium (Hf[O-C (CH
3)
3]
4), three (N, N '-di-isopropyl-amd) yttrium (Y (
ipr
2amd)
3), three (N, N '-di-isopropyl carbonamidine) lanthanum (La (
ipr
2fmd)
3) and glucinum methide (Be (CH
3)
2), titanium tetrachloride (TiCl
4), zinc ethyl ((C
2h
5)
2zn) one or more in.
In such scheme, in described step 2, the temperature in described metal precursor source is 15 degrees Celsius-300 degrees Celsius, the burst length in described metallic precursor source be 1 millisecond-60 seconds, the purity of described high pure nitrogen be 99.999% and more than, the flow of described high pure nitrogen is 10sccm-1000sccm, the scavenging period of described high pure nitrogen be 10 milliseconds-120 seconds.
In such scheme, in described step 3, the burst length of described Aquapulse be 1 millisecond-60 seconds; The purity of described high pure nitrogen be 99.999% and more than, the flow of described high pure nitrogen is 10sccm-1000sccm, the scavenging period of described high pure nitrogen be 10 milliseconds-120 seconds.
In such scheme, in described step 4, the flow of described in-situ treatment gas between 0sccm-1000sccm, the burst length of described in-situ treatment gas pulses be 1 millisecond-10 minutes.
In such scheme, in described step 4, the flow of described high pure nitrogen is 10sccm-1000sccm, the scavenging period of described high pure nitrogen be 10 milliseconds-120 seconds.
In such scheme, in described step 4, described in-situ treatment gas is one or more mixed gass in oxygen, nitrogen, ammonia, hydrogen, laughing gas.
In such scheme, in described step 5, described medium of oxides is one or more combinations of aluminium sesquioxide, hafnium oxide, lanthanum sesquioxide, yttrium oxide, beryllium oxide, titanium dioxide, zinc oxide.
(3) beneficial effect
The Atomic layer deposition method of medium of oxides provided by the present invention, can be applicable to the preparation of silica-based, germanium base and compound semiconductor base MOS device gate medium.This Atomic layer deposition method increases to three kinds of reaction precursor body sources by two kinds of reaction precursor body sources in conventional atomic layer deposition method, water is cooked precursor source and has been guaranteed that reaction carbon foreign matter content in low-temperature epitaxy and reaction product is low, in-situ treatment gas pulses passes in reaction cavity after Aquapulse completes can effectively reduce the defects such as oxygen room in medium of oxides, and can fill the room causing because of steric effect, thereby improve the electrology characteristic of medium of oxides, reduce gate medium electric leakage and improve gate dielectric breakdown voltage.These characteristics show that the present invention possesses wide application prospect and market outlook in rear mole of epoch CMOS integrated technology gate medium deposition.
Accompanying drawing explanation
Fig. 1 is the method flow diagram according to the ald of the aluminium sesquioxide of the embodiment of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The present invention is to provide a kind of Atomic layer deposition method of medium of oxides, the method is to utilize atomic layer deposition system to carry out the preparation of medium of oxides, comprises the following steps:
Step 1: set atomic layer deposition system growth parameter(s); Wherein, the reaction chamber temperature of atomic layer deposition system is 20 degrees Celsius-500 degrees Celsius, and reaction chamber pressure is 0.5 millibar-10 millibars.
Step 2: pass into the pulse of metal precursor source in atomic layer deposition system reaction cavity, and then clean with high pure nitrogen, wash out byproduct of reaction and residual metal precursor source;
Wherein, described metal precursor source is trimethyl aluminium (Al (CH
3)
3), four (ethylmethylamino) hafnium (Hf[N (CH
3) (C
2h
5)]
4), four (diethylamino) hafnium (Hf[N (CH
3)
2]
4), four (diethylamino) hafnium (Hf[N (C
2h
5)
2]
4), four trimethyl carbinol hafnium (Hf[O-C (CH
3)
3]
4), three (N, N '-di-isopropyl-amd) yttrium (Y (
ipr
2amd)
3), three (N, N '-di-isopropyl carbonamidine) lanthanum (La (
ipr
2fmd)
3) and glucinum methide (Be (CH
3)
2), titanium tetrachloride (TiCl
4), zinc ethyl ((C
2h
5)
2zn) one or more in.The temperature in described metal precursor source is 15 degrees Celsius-300 degrees Celsius, the burst length in described metallic precursor source be 1 millisecond-60 seconds, the purity of described high pure nitrogen be 99.999% and more than, the flow of described high pure nitrogen is 10sccm-1000sccm, the scavenging period of described high pure nitrogen be 10 milliseconds-120 seconds.
Step 3: pass into Aquapulse in atomic layer deposition system reaction cavity, and then clean with high pure nitrogen, wash out byproduct of reaction and residual water;
Wherein, the burst length of described Aquapulse be 1 millisecond-60 seconds; The purity of described high pure nitrogen be 99.999% and more than, the flow of described high pure nitrogen is 10sccm-1000sccm, the scavenging period of described high pure nitrogen be 10 milliseconds-120 seconds.
Step 4: pass into in-situ treatment gas pulses in atomic layer deposition system reaction cavity, and then clean with high pure nitrogen, wash out byproduct of reaction and residual in-situ treatment gas;
Wherein, the flow of described in-situ treatment gas between 0sccm-1000sccm, the burst length of described in-situ treatment gas pulses be 1 millisecond-10 minutes.The flow of described high pure nitrogen is 10sccm-1000sccm, the scavenging period of described high pure nitrogen be 10 milliseconds-120 seconds.Described in-situ treatment gas is one or more mixed gass in oxygen, nitrogen, ammonia, hydrogen, laughing gas.
Step 5: repeat successively step 2, step 3 and step 4, obtain the medium of oxides film of high-k; Wherein, described medium of oxides is one or more combinations of aluminium sesquioxide, hafnium oxide, lanthanum sesquioxide, yttrium oxide, beryllium oxide, titanium dioxide, zinc oxide.
Following examples specifically describe a kind of medium of oxides aluminium sesquioxide (Al provided by the present invention
2o
3) Atomic layer deposition method.
As shown in Figure 1, Fig. 1 is that the method comprises the steps: according to the method flow diagram of the ald of the aluminium sesquioxide of the embodiment of the present invention
Step 101: as shown in Figure 1, atomic layer deposition system parameter setting, reaction chamber temperature is 250 degrees Celsius, reaction chamber pressure is 1.5 millibars;
Step 102: pass into metal precursor source Al (CH in atomic layer deposition system reaction cavity
3)
3pulse, Al (CH
3)
3the temperature in source is 20 degrees Celsius, and the burst length is 100 milliseconds, and then with high pure nitrogen, cleans, and the purity of high pure nitrogen is 99.999%, and the flow of high pure nitrogen is 300sccm, and scavenging period is 3 seconds.
Step 103: pass into Aquapulse in atomic layer deposition system reaction cavity, the temperature at water source is 20 degrees Celsius, and the burst length is 100 milliseconds, and then with high pure nitrogen, clean, the purity of high pure nitrogen is 99.999%, and the flow of high pure nitrogen is 300sccm, and scavenging period is 3 seconds.
Step 104: pass into pulse of oxygen in atomic layer deposition system reaction cavity, pulse of oxygen is that purity is 99.9999%, the flow 500sccm of oxygen, 5 seconds burst lengths of oxygen, and then with high pure nitrogen, clean, the purity of high pure nitrogen is 99.999%, and the flow of high pure nitrogen is 300sccm, and scavenging period is 4 seconds.
Step 102, step 103 and step 104 form a growth cycle of aluminium sesquioxide, and the thickness of each growth cycle is 0.1 nanometer, and repeating step 102, step 103 and step 104 circulate 100 times successively, the thick aluminium sesquioxide film of growth 10nm.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. an Atomic layer deposition method for medium of oxides, is characterized in that, the method is to utilize atomic layer deposition system to carry out the preparation of medium of oxides, comprising:
Step 1: set atomic layer deposition system growth parameter(s);
Step 2: pass into the pulse of metal precursor source in atomic layer deposition system reaction cavity, and then clean with high pure nitrogen, wash out byproduct of reaction and residual metal precursor source;
Step 3: pass into Aquapulse in atomic layer deposition system reaction cavity, and then clean with high pure nitrogen, wash out byproduct of reaction and residual water;
Step 4: pass into in-situ treatment gas pulses in atomic layer deposition system reaction cavity, and then clean with high pure nitrogen, wash out byproduct of reaction and residual in-situ treatment gas;
Step 5: repeat successively step 2, step 3 and step 4, obtain the medium of oxides film of high-k.
2. the Atomic layer deposition method of medium of oxides according to claim 1, is characterized in that, in described step 1, the reaction chamber temperature of described atomic layer deposition system is 20 degrees Celsius-500 degrees Celsius, and reaction chamber pressure is 0.5 millibar-10 millibars.
3. the Atomic layer deposition method of medium of oxides according to claim 1, is characterized in that, in described step 2, described metal precursor source is trimethyl aluminium (Al (CH
3)
3), four (ethylmethylamino) hafnium (Hf[N (CH
3) (C
2h
5)]
4), four (diethylamino) hafnium (Hf[N (CH
3)
2]
4), four (diethylamino) hafnium (Hf[N (C
2h
5)
2]
4), four trimethyl carbinol hafnium (Hf[O-C (CH
3)
3]
4), three (N, N '-di-isopropyl-amd) yttrium (Y (
ipr
2amd)
3), three (N, N '-di-isopropyl carbonamidine) lanthanum (La (
ipr
2fmd)
3) and glucinum methide (Be (CH
3)
2), titanium tetrachloride (TiCl
4), zinc ethyl ((C
2h
5)
2zn) one or more in.
4. the Atomic layer deposition method of medium of oxides according to claim 1, it is characterized in that, in described step 2, the temperature in described metal precursor source is 15 degrees Celsius-300 degrees Celsius, the burst length in described metallic precursor source be 1 millisecond-60 seconds, the purity of described high pure nitrogen be 99.999% and more than, the flow of described high pure nitrogen is 10sccm-1000sccm, the scavenging period of described high pure nitrogen be 10 milliseconds-120 seconds.
5. the preparation method of high dielectric constant oxide according to claim 1, is characterized in that, in described step 3, the burst length of described Aquapulse be 1 millisecond-60 seconds; The purity of described high pure nitrogen be 99.999% and more than, the flow of described high pure nitrogen is 10sccm-1000sccm, the scavenging period of described high pure nitrogen be 10 milliseconds-120 seconds.
6. the Atomic layer deposition method of medium of oxides according to claim 1, it is characterized in that, in described step 4, the flow of described in-situ treatment gas between 0sccm-1000sccm, the burst length of described in-situ treatment gas pulses be 1 millisecond-10 minutes.
7. the Atomic layer deposition method of medium of oxides according to claim 1, is characterized in that, in described step 4, the flow of described high pure nitrogen is 10sccm-1000sccm, the scavenging period of described high pure nitrogen be 10 milliseconds-120 seconds.
8. the Atomic layer deposition method of medium of oxides according to claim 1, is characterized in that, in described step 4, described in-situ treatment gas is one or more mixed gass in oxygen, nitrogen, ammonia, hydrogen, laughing gas.
9. the Atomic layer deposition method of medium of oxides according to claim 1, it is characterized in that, in described step 5, described medium of oxides is one or more combinations of aluminium sesquioxide, hafnium oxide, lanthanum sesquioxide, yttrium oxide, beryllium oxide, titanium dioxide, zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310667554.2A CN103668108A (en) | 2013-12-10 | 2013-12-10 | Atomic layer deposition method of oxide medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310667554.2A CN103668108A (en) | 2013-12-10 | 2013-12-10 | Atomic layer deposition method of oxide medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103668108A true CN103668108A (en) | 2014-03-26 |
Family
ID=50306867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310667554.2A Pending CN103668108A (en) | 2013-12-10 | 2013-12-10 | Atomic layer deposition method of oxide medium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103668108A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106756878A (en) * | 2016-12-29 | 2017-05-31 | 中国科学院微电子研究所 | Atomic layer deposition method of oxide medium |
| CN107190362A (en) * | 2017-07-17 | 2017-09-22 | 宁波工程学院 | A kind of high-purity ZnO/BiVO4The preparation method of heterogeneous micro belt |
| CN107516692A (en) * | 2016-06-15 | 2017-12-26 | 常州天合光能有限公司 | The method and solar cell of deposit dielectrics film on a silicon substrate |
| CN110042365A (en) * | 2019-03-04 | 2019-07-23 | 中国科学院物理研究所 | A kind of Atomic layer deposition method in two-dimensional material surface growth aluminium oxide |
| CN112746265A (en) * | 2020-12-29 | 2021-05-04 | 兰州空间技术物理研究所 | Method for preparing coating on inner surface of spray pipe |
| TWI744313B (en) * | 2016-04-14 | 2021-11-01 | 日商Ｗａｃｏｍ研究所股份有限公司 | Manufacturing method of HfN film and HfN film |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101014730A (en) * | 2004-06-15 | 2007-08-08 | 阿维扎技术公司 | System and method for forming multi-component dielectric films |
| US20100227061A1 (en) * | 2006-11-14 | 2010-09-09 | Maitreyee Mahajani | LOW TEMPERATURE ALD Si02 |
| WO2010114386A1 (en) * | 2009-03-30 | 2010-10-07 | Universitetet I Oslo | Thin films containing molybdenum oxide |
| CN101864562A (en) * | 2010-07-07 | 2010-10-20 | 南京大学 | Method for preparing oxide surface on metal medical appliance by Atomic Layer Deposition (ALD) technology |
| CN102892921A (en) * | 2010-05-10 | 2013-01-23 | 贝尼科公司 | A method for producing a deposit and a deposit on a surface of a silicon substrate |
| CN102994975A (en) * | 2011-09-15 | 2013-03-27 | 上海纳米技术及应用国家工程研究中心有限公司 | Preparation method of aluminum-doped zinc oxide transparent conductive oxide film |
-
2013
- 2013-12-10 CN CN201310667554.2A patent/CN103668108A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101014730A (en) * | 2004-06-15 | 2007-08-08 | 阿维扎技术公司 | System and method for forming multi-component dielectric films |
| US20100227061A1 (en) * | 2006-11-14 | 2010-09-09 | Maitreyee Mahajani | LOW TEMPERATURE ALD Si02 |
| WO2010114386A1 (en) * | 2009-03-30 | 2010-10-07 | Universitetet I Oslo | Thin films containing molybdenum oxide |
| CN102892921A (en) * | 2010-05-10 | 2013-01-23 | 贝尼科公司 | A method for producing a deposit and a deposit on a surface of a silicon substrate |
| CN101864562A (en) * | 2010-07-07 | 2010-10-20 | 南京大学 | Method for preparing oxide surface on metal medical appliance by Atomic Layer Deposition (ALD) technology |
| CN102994975A (en) * | 2011-09-15 | 2013-03-27 | 上海纳米技术及应用国家工程研究中心有限公司 | Preparation method of aluminum-doped zinc oxide transparent conductive oxide film |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI744313B (en) * | 2016-04-14 | 2021-11-01 | 日商Ｗａｃｏｍ研究所股份有限公司 | Manufacturing method of HfN film and HfN film |
| CN107516692A (en) * | 2016-06-15 | 2017-12-26 | 常州天合光能有限公司 | The method and solar cell of deposit dielectrics film on a silicon substrate |
| CN106756878A (en) * | 2016-12-29 | 2017-05-31 | 中国科学院微电子研究所 | Atomic layer deposition method of oxide medium |
| CN106756878B (en) * | 2016-12-29 | 2019-04-02 | 中国科学院微电子研究所 | Atomic layer deposition method of oxide medium |
| CN107190362A (en) * | 2017-07-17 | 2017-09-22 | 宁波工程学院 | A kind of high-purity ZnO/BiVO4The preparation method of heterogeneous micro belt |
| CN110042365A (en) * | 2019-03-04 | 2019-07-23 | 中国科学院物理研究所 | A kind of Atomic layer deposition method in two-dimensional material surface growth aluminium oxide |
| CN112746265A (en) * | 2020-12-29 | 2021-05-04 | 兰州空间技术物理研究所 | Method for preparing coating on inner surface of spray pipe |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103668108A (en) | Atomic layer deposition method of oxide medium | |
| CN102332395B (en) | Method for selectively depositing gate oxides and gate electrodes | |
| CN103628037A (en) | Preparation method of high dielectric constant oxide | |
| CN102592974B (en) | Preparation method for high-K medium film | |
| CN102306625B (en) | Germanium-based MOS device substrate surface passivation method | |
| CN102931068A (en) | Preparation method of germanium-based MOSFET gate dielectric | |
| CN106756878B (en) | Atomic layer deposition method of oxide medium | |
| CN103295890B (en) | Be deposited on the processing method of the gate medium on germanium base or three or five compounds of group base substrates | |
| CN102339775A (en) | Method for washing and purifying autologous oxide on surface of GaAs (gallium arsenide) and depositing Al2O3 medium | |
| CN106847672A (en) | The epitaxy method of high-breakdown-voltage gallium nitride power material | |
| CN101728257B (en) | Preparation method of gate dielectric/metal gate integrated structure | |
| CN102543751A (en) | Preparation method of Ge-based Metal Oxide Semiconductor (MOS) device with sub-nanometer equivalent to oxide thickness | |
| CN101800178B (en) | Preparation method of hafnium silicon aluminum oxygen nitrogen high dielectric constant gate dielectric | |
| CN107527803B (en) | The preparation method of SiC device gate dielectric layer and SiC device structure | |
| CN109037340A (en) | T-type grid Ge/SiGe hetero-junctions tunneling field-effect transistor and preparation method | |
| TW201246308A (en) | Method for band gap tuning of metal oxide semiconductors | |
| US20120273861A1 (en) | Method of depositing gate dielectric, method of preparing mis capacitor, and mis capacitor | |
| CN106129106A (en) | Mos field effect transistor and preparation method thereof | |
| CN102569027A (en) | Method for controlling size of germanium nano microstructure | |
| CN103515207B (en) | Oxide layer, HKMG structure median surface layer, MOS transistor forming method and MOS transistor | |
| CN106531622A (en) | Preparation method of gallium arsenide-based MOSFET gate dielectric | |
| CN112599408A (en) | Preparation method of silicon carbide metal oxide semiconductor with composite oxide layer | |
| CN104733285A (en) | Method for preparing zinc-doped ultra-shallow junction on surface of semiconductor substrate | |
| CN107331701A (en) | Method for optimizing conductive characteristics of diamond material channel | |
| CN110993486B (en) | Preparation technology for improving quality of gate oxide layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140326 |