CN103650097B - 带电粒子多小束设备 - Google Patents
带电粒子多小束设备 Download PDFInfo
- Publication number
- CN103650097B CN103650097B CN201280034520.3A CN201280034520A CN103650097B CN 103650097 B CN103650097 B CN 103650097B CN 201280034520 A CN201280034520 A CN 201280034520A CN 103650097 B CN103650097 B CN 103650097B
- Authority
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- China
- Prior art keywords
- charged particle
- hole
- array
- tuftlet
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
- H01J2237/04924—Lens systems electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/1205—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1532—Astigmatism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2006868A NL2006868C2 (en) | 2011-05-30 | 2011-05-30 | Charged particle multi-beamlet apparatus. |
| NL2006868 | 2011-05-30 | ||
| US201161491865P | 2011-05-31 | 2011-05-31 | |
| US61/491,865 | 2011-05-31 | ||
| PCT/NL2012/050376 WO2012165955A2 (en) | 2011-05-30 | 2012-05-30 | Charged particle multi-beamlet apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103650097A CN103650097A (zh) | 2014-03-19 |
| CN103650097B true CN103650097B (zh) | 2017-10-10 |
Family
ID=47260136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280034520.3A Active CN103650097B (zh) | 2011-05-30 | 2012-05-30 | 带电粒子多小束设备 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9607806B2 (enExample) |
| EP (2) | EP3660883B1 (enExample) |
| JP (1) | JP6141276B2 (enExample) |
| KR (7) | KR102137169B1 (enExample) |
| CN (1) | CN103650097B (enExample) |
| NL (1) | NL2006868C2 (enExample) |
| RU (1) | RU2632937C2 (enExample) |
| TW (1) | TWI582816B (enExample) |
| WO (1) | WO2012165955A2 (enExample) |
Families Citing this family (129)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6147528B2 (ja) * | 2012-06-01 | 2017-06-14 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置 |
| US9824851B2 (en) * | 2013-01-20 | 2017-11-21 | William M. Tong | Charge drain coating for electron-optical MEMS |
| JP6293435B2 (ja) * | 2013-08-08 | 2018-03-14 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
| NL2011401C2 (en) * | 2013-09-06 | 2015-03-09 | Mapper Lithography Ip Bv | Charged particle optical device. |
| DE102014008083B9 (de) | 2014-05-30 | 2018-03-22 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlsystem |
| DE102014008105B4 (de) | 2014-05-30 | 2021-11-11 | Carl Zeiss Multisem Gmbh | Mehrstrahl-Teilchenmikroskop |
| DE102014008383B9 (de) | 2014-06-06 | 2018-03-22 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlsystem und Verfahren zum Betreiben einer Teilchenoptik |
| US10497536B2 (en) * | 2016-09-08 | 2019-12-03 | Rockwell Collins, Inc. | Apparatus and method for correcting arrayed astigmatism in a multi-column scanning electron microscopy system |
| US10840056B2 (en) * | 2017-02-03 | 2020-11-17 | Kla Corporation | Multi-column scanning electron microscopy system |
| KR102582001B1 (ko) * | 2017-04-28 | 2023-09-22 | 에이에스엠엘 네델란즈 비.브이. | 다수의 하전 입자 빔들을 사용하는 장치 |
| KR102460680B1 (ko) * | 2017-10-02 | 2022-10-28 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 빔들을 사용하는 장치 |
| EP3474308A1 (en) * | 2017-10-17 | 2019-04-24 | Universiteit Antwerpen | Spatial phase manipulation of charged particle beam |
| JP7198092B2 (ja) * | 2018-05-18 | 2022-12-28 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム照射装置、マルチ電子ビーム検査装置及びマルチ電子ビーム照射方法 |
| EP3576128A1 (en) * | 2018-05-28 | 2019-12-04 | ASML Netherlands B.V. | Electron beam apparatus, inspection tool and inspection method |
| US10483080B1 (en) * | 2018-07-17 | 2019-11-19 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device |
| DE102018007652B4 (de) * | 2018-09-27 | 2021-03-25 | Carl Zeiss Multisem Gmbh | Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen |
| US11145485B2 (en) * | 2018-12-26 | 2021-10-12 | Nuflare Technology, Inc. | Multiple electron beams irradiation apparatus |
| US20200303156A1 (en) * | 2019-03-20 | 2020-09-24 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Beam splitter for a charged particle device |
| EP3716313A1 (en) * | 2019-03-28 | 2020-09-30 | ASML Netherlands B.V. | Aperture array with integrated current measurement |
| CN113795459B (zh) * | 2019-04-06 | 2025-04-29 | Asml荷兰有限公司 | 具有内置电压生成器的mems图像形成元件 |
| DE102019005362A1 (de) * | 2019-07-31 | 2021-02-04 | Carl Zeiss Multisem Gmbh | Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem |
| JP7222874B2 (ja) * | 2019-11-12 | 2023-02-15 | 東芝デバイス＆ストレージ株式会社 | 半導体装置 |
| US11120965B2 (en) * | 2019-12-04 | 2021-09-14 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Beam blanking device for a multi-beamlet charged particle beam apparatus |
| EP4088301A1 (en) | 2020-01-06 | 2022-11-16 | ASML Netherlands B.V. | Charged particle assessment tool, inspection method |
| EP3937204A1 (en) | 2020-07-06 | 2022-01-12 | ASML Netherlands B.V. | Inspection apparatus |
| EP3975222A1 (en) | 2020-09-24 | 2022-03-30 | ASML Netherlands B.V. | Charged particle assessment tool, inspection method |
| EP3863040A1 (en) | 2020-02-07 | 2021-08-11 | ASML Netherlands B.V. | Charged particle manipulator device |
| EP3869533A1 (en) | 2020-02-21 | 2021-08-25 | ASML Netherlands B.V. | Charged particle assessment tool, inspection method |
| EP3869536A1 (en) | 2020-02-21 | 2021-08-25 | ASML Netherlands B.V. | Inspection apparatus |
| CN115152000A (zh) | 2020-02-21 | 2022-10-04 | Asml荷兰有限公司 | 带电粒子评估工具及检查方法 |
| EP3869535A1 (en) | 2020-02-21 | 2021-08-25 | ASML Netherlands B.V. | Charged particle assessment tool, inspection method |
| KR20250144502A (ko) * | 2020-02-21 | 2025-10-10 | 에이에스엠엘 네델란즈 비.브이. | 검사 장치 |
| EP3876258A1 (en) * | 2020-03-06 | 2021-09-08 | ASML Netherlands B.V. | Beam manipulator in charged particle-beam exposure apparatus |
| JP7359050B2 (ja) * | 2020-03-18 | 2023-10-11 | 株式会社ニューフレアテクノロジー | マルチビーム用のブランキング装置及びマルチ荷電粒子ビーム描画装置 |
| EP3893263A1 (en) | 2020-04-06 | 2021-10-13 | ASML Netherlands B.V. | Aperture assembly, beam manipulator unit, method of manipulating charged particle beams, and charged particle projection apparatus |
| EP3893264A1 (en) | 2020-04-06 | 2021-10-13 | ASML Netherlands B.V. | Charged particle assessment tool, inspection method |
| JP7409946B2 (ja) * | 2020-04-13 | 2024-01-09 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム照射装置及びマルチ荷電粒子ビーム検査装置 |
| EP4165675A1 (en) | 2020-06-10 | 2023-04-19 | ASML Netherlands B.V. | Replaceable module for a charged particle apparatus |
| EP4020565A1 (en) | 2020-12-23 | 2022-06-29 | ASML Netherlands B.V. | Detector substrate, an inspection apparatus and method of sample assessment |
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| EP3937205A1 (en) | 2020-07-06 | 2022-01-12 | ASML Netherlands B.V. | Charged-particle multi-beam column, charged-particle multi-beam column array, inspection method |
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| KR20230118106A (ko) | 2020-12-14 | 2023-08-10 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자의 다중 빔을 사용하여 샘플을 프로세싱하는 하전 입자 시스템, 방법 |
| EP4086933A1 (en) | 2021-05-03 | 2022-11-09 | ASML Netherlands B.V. | Charged particle system, method of processing a sample using a multi-beam of charged particles |
| EP4020516A1 (en) | 2020-12-23 | 2022-06-29 | ASML Netherlands B.V. | Charged particle optical device, objective lens assembly, detector, detector array, and methods |
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| US20240006146A1 (en) * | 2020-12-24 | 2024-01-04 | National University Of Singapore | Ion microscope |
| EP4084039A1 (en) | 2021-04-29 | 2022-11-02 | ASML Netherlands B.V. | Charged particle assessment system and method |
| KR20240007649A (ko) | 2021-05-12 | 2024-01-16 | 에이에스엠엘 네델란즈 비.브이. | 평가 시스템, 평가 방법 |
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| EP4117016A1 (en) | 2021-07-05 | 2023-01-11 | ASML Netherlands B.V. | Charged particle detector |
| EP4117015A1 (en) | 2021-07-05 | 2023-01-11 | ASML Netherlands B.V. | Charged particle device, detector, and methods |
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| EP4117014A1 (en) | 2021-07-07 | 2023-01-11 | ASML Netherlands B.V. | Charged particle apparatus and method |
| DE102021118561B4 (de) | 2021-07-19 | 2023-03-30 | Carl Zeiss Multisem Gmbh | Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskopes mit schneller Strahlstromregelung, Computerprogrammprodukt und Vielstrahl-Teilchenmikroskop |
| EP4123683A1 (en) | 2021-07-20 | 2023-01-25 | ASML Netherlands B.V. | Data processing device and method, charged particle assessment system and method |
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| US11651934B2 (en) | 2021-09-30 | 2023-05-16 | Kla Corporation | Systems and methods of creating multiple electron beams |
| WO2023066595A1 (en) | 2021-10-19 | 2023-04-27 | Asml Netherlands B.V. | Detector assembly, charged particle device, apparatus, and methods |
| EP4170695A1 (en) | 2021-10-19 | 2023-04-26 | ASML Netherlands B.V. | Detector assembly, charged particle device, apparatus, and methods |
| EP4181167A1 (en) | 2021-11-11 | 2023-05-17 | ASML Netherlands B.V. | Charged particle assessment system and method |
| KR20240095241A (ko) | 2021-11-11 | 2024-06-25 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 평가 시스템 및 방법 |
| EP4213176A1 (en) | 2022-01-13 | 2023-07-19 | ASML Netherlands B.V. | Charged particle assessment system |
| WO2023110244A1 (en) | 2021-12-15 | 2023-06-22 | Asml Netherlands B.V. | Charged particle assessment system |
| WO2023110284A1 (en) | 2021-12-15 | 2023-06-22 | Asml Netherlands B.V. | Method of generating a sample map, computer program product |
| EP4199031A1 (en) | 2021-12-17 | 2023-06-21 | ASML Netherlands B.V. | Charged-particle optical apparatus and projection method |
| KR20240115321A (ko) | 2021-12-17 | 2024-07-25 | 에이에스엠엘 네델란즈 비.브이. | 검출기 검사 디바이스, 검출기 조립체, 검출기 어레이, 장치, 및 방법 |
| WO2023110331A1 (en) | 2021-12-17 | 2023-06-22 | Asml Netherlands B.V. | Charged-particle optical apparatus and projection method |
| EP4199027A1 (en) | 2021-12-17 | 2023-06-21 | ASML Netherlands B.V. | Charged-particle apparatus, multi-device apparatus, method of using charged-particle apparatus and control method |
| EP4199032A1 (en) | 2021-12-17 | 2023-06-21 | ASML Netherlands B.V. | Detector inspection device, detector assembly, detector array, apparatus, and method |
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| CA3242123A1 (en) * | 2021-12-31 | 2023-07-06 | German AKSENOV | A beam manipulator in charged particle-beam apparatus |
| EP4250331A1 (en) | 2022-03-22 | 2023-09-27 | ASML Netherlands B.V. | Charged particle apparatus and method |
| EP4258320A1 (en) | 2022-04-08 | 2023-10-11 | ASML Netherlands B.V. | Sensor substrate, apparatus, and method |
| CN119156687A (zh) * | 2022-04-11 | 2024-12-17 | 华为技术有限公司 | 粒子矫正装置、粒子矫正器模组和粒子系统 |
| EP4280252A1 (en) | 2022-05-16 | 2023-11-22 | ASML Netherlands B.V. | Charged particle optical device and method |
| EP4511860A1 (en) | 2022-04-18 | 2025-02-26 | ASML Netherlands B.V. | Charged particle optical device and method |
| CN119404279A (zh) | 2022-07-15 | 2025-02-07 | Asml荷兰有限公司 | 带电粒子光学装置 |
| EP4354485A1 (en) | 2022-10-13 | 2024-04-17 | ASML Netherlands B.V. | Charged particle-optical apparatus |
| EP4345861A1 (en) | 2022-09-28 | 2024-04-03 | ASML Netherlands B.V. | Charged particle apparatus |
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| KR20250093503A (ko) | 2022-10-27 | 2025-06-24 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 광학 장치 |
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| JP6141276B2 (ja) | 2017-06-07 |
| KR20220017525A (ko) | 2022-02-11 |
| KR102553059B1 (ko) | 2023-07-10 |
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